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VS-HFA200FA120P VS-HFA200FA120P Vishay General Semiconductor - Diodes Division VS-HFA200FA120P.pdf Description: DIODE HEXFRED 100A 1200V SOT-227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 100 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
товар відсутній
VS-HFA280NJ60CPBF VS-HFA280NJ60CPBF Vishay General Semiconductor - Diodes Division vs-hfa280nj60cpbf.pdf Description: DIODE MOD GP 600V 280A TO244AB
Packaging: Tray
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 280A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 210 A
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
товар відсутній
VS-HFA60EA120P VS-HFA60EA120P Vishay General Semiconductor - Diodes Division Description: DIODE MODULE GP 1200V 30A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
товар відсутній
VS-HFA60FA120P VS-HFA60FA120P Vishay General Semiconductor - Diodes Division VS-HFA60FA120P.pdf Description: DIODE MODULE GP 1200V 30A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 123 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
товар відсутній
VS-HFA70FA120 VS-HFA70FA120 Vishay General Semiconductor - Diodes Division vshfa70f.pdf Description: DIODE MODULE GP 1200V 70A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 51 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 70A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.8 V @ 60 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
товар відсутній
VS-HFA80FA120P VS-HFA80FA120P Vishay General Semiconductor - Diodes Division VS-HFA80FA120P.pdf Description: DIODE HEXFRED 40A 1200V SOT-227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 40A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 40 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
товар відсутній
VS-100BGQ015HF4 VS-100BGQ015HF4 Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 15V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3800pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 100 A
Current - Reverse Leakage @ Vr: 18 mA @ 15 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
VS-100BGQ030HF4 VS-100BGQ030HF4 Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 100 A
Current - Reverse Leakage @ Vr: 2.4 mA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
VS-100BGQ045HF4 VS-100BGQ045HF4 Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 45V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2700pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
VS-10CTQ150-1PBF VS-10CTQ150-1PBF Vishay General Semiconductor - Diodes Division VS-10CTQ150%28SPBF%2C-1PBF%29.pdf Description: DIODE ARR SCHOTT 150V 5A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
VS-10CWH02FN-M3 VS-10CWH02FN-M3 Vishay General Semiconductor - Diodes Division vs-10cwh02f.pdf Description: DIODE ARRAY GP 200V 10A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 200 V
на замовлення 10735 шт:
термін постачання 21-31 дні (днів)
7+46.55 грн
75+ 35.75 грн
150+ 28.33 грн
525+ 22.53 грн
1050+ 22.29 грн
Мінімальне замовлення: 7
VS-10ETF02FP-M3 VS-10ETF02FP-M3 Vishay General Semiconductor - Diodes Division vs-10etf02_04_06fp-m3.pdf Description: DIODE GP 200V 10A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
товар відсутній
VS-10ETF02-M3 VS-10ETF02-M3 Vishay General Semiconductor - Diodes Division vs-10etf0m3.pdf Description: DIODE GEN PURP 200V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
товар відсутній
VS-10ETF02SPBF VS-10ETF02SPBF Vishay General Semiconductor - Diodes Division VS-10ETF..SPbF.pdf Description: DIODE GEN PURP 200V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
товар відсутній
VS-10ETF04FP-M3 VS-10ETF04FP-M3 Vishay General Semiconductor - Diodes Division vs-10etf02_04_06fp-m3.pdf Description: DIODE GP 400V 10A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
товар відсутній
VS-10ETF06FP-M3 VS-10ETF06FP-M3 Vishay General Semiconductor - Diodes Division vs-10etf02_04_06fp-m3.pdf Description: DIODE GP 600V 10A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
товар відсутній
VS-10ETF06-M3 VS-10ETF06-M3 Vishay General Semiconductor - Diodes Division vs-10etf0m3.pdf Description: DIODE GEN PURP 600V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товар відсутній
VS-10ETF10-M3 VS-10ETF10-M3 Vishay General Semiconductor - Diodes Division vs-10etf1m3.pdf Description: DIODE GEN PURP 1KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
на замовлення 6971 шт:
термін постачання 21-31 дні (днів)
2+186.18 грн
10+ 161.28 грн
100+ 129.65 грн
500+ 99.96 грн
1000+ 82.83 грн
2000+ 82.39 грн
Мінімальне замовлення: 2
VS-10ETF10SPBF VS-10ETF10SPBF Vishay General Semiconductor - Diodes Division VS-10ETF..(10,12)SPbF.pdf Description: DIODE GEN PURP 1KV 10A TO263AB
товар відсутній
VS-10ETF12FP-M3 VS-10ETF12FP-M3 Vishay General Semiconductor - Diodes Division vs-10etf10_12fp-m3.pdf Description: DIODE GP 1.2KV 10A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
на замовлення 1469 шт:
термін постачання 21-31 дні (днів)
2+185.42 грн
50+ 143.91 грн
100+ 118.41 грн
500+ 94.03 грн
1000+ 79.78 грн
Мінімальне замовлення: 2
VS-10ETF12SPBF VS-10ETF12SPBF Vishay General Semiconductor - Diodes Division VS-10ETF..(10,12)SPbF.pdf Description: DIODE GEN PURP 1.2KV 10A TO263AB
товар відсутній
VS-10ETS08SPBF VS-10ETS08SPBF Vishay General Semiconductor - Diodes Division VS-10ETS..SPbF_Series.pdf Description: DIODE GEN PURP 800V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
товар відсутній
VS-10RIA100M Vishay General Semiconductor - Diodes Division vs-10ria.pdf Description: SCR 1KV 10A TO208AA
товар відсутній
VS-10RIA120M Vishay General Semiconductor - Diodes Division vs-10ria.pdf Description: SCR 1.2KV 10A TO208AA
товар відсутній
VS-10RIA40M VS-10RIA40M Vishay General Semiconductor - Diodes Division vs-10ria.pdf Description: SCR 400V 10A TO208AA
Packaging: Tube
Package / Case: TO-208AA, TO-48-3, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 130 mA
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 200A
Current - On State (It (AV)) (Max): 25 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.75 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-208AA (TO-48)
Part Status: Active
Current - On State (It (RMS)) (Max): 10 A
Voltage - Off State: 400 V
товар відсутній
VS-10RIA80M Vishay General Semiconductor - Diodes Division vs-10ria.pdf Description: SCR 800V 10A TO208AA
товар відсутній
VS-10TQ035-N3 VS-10TQ035-N3 Vishay General Semiconductor - Diodes Division VS-10TQ(PbF,M3).pdf Description: DIODE SCHOTTKY 35V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
товар відсутній
VS-10TQ045-N3 VS-10TQ045-N3 Vishay General Semiconductor - Diodes Division VS-10TQ(PbF,M3).pdf Description: DIODE SCHOTTKY 45V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
товар відсутній
VS-10WQ045FNHM3 VS-10WQ045FNHM3 Vishay General Semiconductor - Diodes Division vs10wq045f.pdf Description: DIODE SCHOTTKY 45V 10A TO252
товар відсутній
VS-112CNQ030ASLPBF VS-112CNQ030ASLPBF Vishay General Semiconductor - Diodes Division VS-112CNQ030APbf.pdf Description: DIODE ARRAY SCHOTTKY 30V D618SL
товар відсутній
VS-112CNQ030ASMPBF VS-112CNQ030ASMPBF Vishay General Semiconductor - Diodes Division VS-112CNQ030APbf.pdf Description: DIODE ARRAY SCHOTTKY 30V D618SM
товар відсутній
VS-12CWQ04FNHM3 VS-12CWQ04FNHM3 Vishay General Semiconductor - Diodes Division vs12cwq04f.pdf Description: DIODE ARRAY SCHOTTKY 40V 6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 12 A
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
Qualification: AEC-Q101
товар відсутній
VS-12CWQ06FN-M3 VS-12CWQ06FN-M3 Vishay General Semiconductor - Diodes Division vs-12cwq06f.pdf Description: DIODE ARRAY SCHOTTKY 60V 6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 6 A
Current - Reverse Leakage @ Vr: 3 mA @ 60 V
на замовлення 5678 шт:
термін постачання 21-31 дні (днів)
5+63.33 грн
75+ 48.82 грн
150+ 38.68 грн
525+ 30.77 грн
1050+ 25.07 грн
2025+ 23.6 грн
5025+ 22.11 грн
Мінімальне замовлення: 5
VS-12CWQ10FN-M3 VS-12CWQ10FN-M3 Vishay General Semiconductor - Diodes Division 12cwq10f.pdf Description: DIODE ARRAY SCHOTT 100V 6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 12 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
на замовлення 1618 шт:
термін постачання 21-31 дні (днів)
5+66.38 грн
75+ 50.94 грн
150+ 40.37 грн
525+ 32.11 грн
1050+ 26.16 грн
Мінімальне замовлення: 5
VS-12EWH06FN-M3 VS-12EWH06FN-M3 Vishay General Semiconductor - Diodes Division vs-12ewh06fn-m3.pdf Description: DIODE GEN PURP 600V 12A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 2697 шт:
термін постачання 21-31 дні (днів)
4+80.88 грн
75+ 62.46 грн
150+ 49.5 грн
525+ 39.37 грн
1050+ 32.07 грн
2025+ 30.19 грн
Мінімальне замовлення: 4
VS-12TTS08-M3 VS-12TTS08-M3 Vishay General Semiconductor - Diodes Division vs-12tts08-m3.pdf Description: SCR 800V 12.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 95A @ 50Hz
Current - On State (It (AV)) (Max): 8 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.2 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-220-3
Part Status: Active
Current - On State (It (RMS)) (Max): 12.5 A
Voltage - Off State: 800 V
на замовлення 678 шт:
термін постачання 21-31 дні (днів)
2+220.52 грн
50+ 168.4 грн
100+ 144.35 грн
500+ 120.41 грн
Мінімальне замовлення: 2
VS-12TTS08SPBF VS-12TTS08SPBF Vishay General Semiconductor - Diodes Division VS-12TTS08SPbF.pdf Description: SCR 800V 12.5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 95A @ 50Hz
Current - On State (It (AV)) (Max): 8 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.2 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-263AB (D²PAK)
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 12.5 A
Voltage - Off State: 800 V
товар відсутній
VS-150EBU04HF4 VS-150EBU04HF4 Vishay General Semiconductor - Diodes Division Description: DIODE GP 400V 150A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
на замовлення 289 шт:
термін постачання 21-31 дні (днів)
1+622.64 грн
25+ 478.61 грн
100+ 428.23 грн
VS-150U100DL VS-150U100DL Vishay General Semiconductor - Diodes Division vs-150urseries.pdf Description: DIODE GP 1000V 150A DO-8
товар відсутній
VS-150U120DL Vishay General Semiconductor - Diodes Division vs-150urseries.pdf Description: DIODE GP 1200V 150A DO-8
товар відсутній
VS-150U120DM12 Vishay General Semiconductor - Diodes Division vs-150urseries.pdf Description: DIODE GP 1200V 150A DO-8
товар відсутній
VS-150U80DL Vishay General Semiconductor - Diodes Division vs-150urseries.pdf Description: DIODE GP 800V 150A DO-8
товар відсутній
VS-150UR100DL Vishay General Semiconductor - Diodes Division vs-150urseries.pdf Description: DIODE GP 1000V 150A DO-8
товар відсутній
VS-150UR120D VS-150UR120D Vishay General Semiconductor - Diodes Division vs-150urseries.pdf Description: DIODE GP REV 1.2KV 150A DO205AA
Packaging: Tube
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.47 V @ 600 A
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
1+3088.04 грн
10+ 2774.91 грн
VS-150UR120DM12 VS-150UR120DM12 Vishay General Semiconductor - Diodes Division vs-150urseries.pdf Description: DIODE GP 1200V 150A DO-8
товар відсутній
VS-150UR60D Vishay General Semiconductor - Diodes Division vs-150urseries.pdf Description: DIODE GP 600V 150A DO-8
товар відсутній
VS-150UR80D Vishay General Semiconductor - Diodes Division vs-150urseries.pdf Description: DIODE GP 800V 150A DO-8
товар відсутній
VS-150UR80DL Vishay General Semiconductor - Diodes Division vs-150urseries.pdf Description: DIODE GP 800V 150A DO-8
товар відсутній
VS-15CTQ040-1PBF VS-15CTQ040-1PBF Vishay General Semiconductor - Diodes Division VS-15CTQ%28SPbF%2C-1PbF%29.pdf Description: DIODE ARR SCHOTT 40V 15A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
Qualification: AEC-Q101
товар відсутній
VS-15ETH03-1PBF VS-15ETH03-1PBF Vishay General Semiconductor - Diodes Division VS-15ETH03SPbF%281PbF%29.pdf Description: DIODE GEN PURP 300V 15A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
Qualification: AEC-Q101
товар відсутній
VS-15ETH03SPBF VS-15ETH03SPBF Vishay General Semiconductor - Diodes Division VS-15ETH03SPbF%281PbF%29.pdf Description: DIODE GEN PURP 300V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
Qualification: AEC-Q101
товар відсутній
VS-15ETH06-1PBF VS-15ETH06-1PBF Vishay General Semiconductor - Diodes Division VS-15ETH06SPbF_VS-15ETH06-1PbF.pdf Description: DIODE GEN PURP 600V 15A TO262AA
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
Qualification: AEC-Q101
товар відсутній
VS-15ETH06FP-N3 VS-15ETH06FP-N3 Vishay General Semiconductor - Diodes Division VS-15ETH06PbF_FPPbF_VS-15ETH06-NE_FP-N3.pdf Description: DIODE GP 600V 15A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
на замовлення 1526 шт:
термін постачання 21-31 дні (днів)
3+125.9 грн
50+ 97.15 грн
100+ 79.94 грн
500+ 63.48 грн
1000+ 53.86 грн
Мінімальне замовлення: 3
VS-15ETH06SPBF VS-15ETH06SPBF Vishay General Semiconductor - Diodes Division VS-15ETH06SPbF_VS-15ETH06-1PbF.pdf Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Qualification: AEC-Q101
товар відсутній
VS-15ETL06FP-N3 VS-15ETL06FP-N3 Vishay General Semiconductor - Diodes Division VS-15ETL06PbF_FPPbf_VS-15ETL06-N3_FP-N3.pdf Description: DIODE GP 600V 15A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Qualification: AEC-Q101
на замовлення 5012 шт:
термін постачання 21-31 дні (днів)
2+154.13 грн
50+ 119.23 грн
100+ 98.1 грн
500+ 77.9 грн
1000+ 66.1 грн
2000+ 62.79 грн
5000+ 59.44 грн
Мінімальне замовлення: 2
VS-15ETL06SPBF VS-15ETL06SPBF Vishay General Semiconductor - Diodes Division VS-15ETH06SPbF_VS-15ETH06-1PbF.pdf Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Qualification: AEC-Q101
товар відсутній
VS-15ETX06-1PBF VS-15ETX06-1PBF Vishay General Semiconductor - Diodes Division VS-15ETX06SPbF_VS-15ETX06-1PbF.pdf Description: DIODE GEN PURP 600V 15A TO262AA
товар відсутній
VS-15ETX06-N3 VS-15ETX06-N3 Vishay General Semiconductor - Diodes Division VS-15ETX06PbF_FPPbF_VS-15ETX06-N3_FP-N3.pdf Description: DIODE GEN PURP 600V 15A TO220AC
товар відсутній
VS-15ETX06SPBF VS-15ETX06SPBF Vishay General Semiconductor - Diodes Division VS-15ETX06SPbF_VS-15ETX06-1PbF.pdf Description: DIODE GEN PURP 600V 15A TO263AB
товар відсутній
VS-16CTQ060G-1PBF VS-16CTQ060G-1PBF Vishay General Semiconductor - Diodes Division VS-16CTQ...GSPBF,...G-1PBF.pdf Description: DIODE ARRAY SCHOTTKY 60V TO262-3
товар відсутній
VS-HFA200FA120P VS-HFA200FA120P.pdf
VS-HFA200FA120P
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE HEXFRED 100A 1200V SOT-227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 100 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
товар відсутній
VS-HFA280NJ60CPBF vs-hfa280nj60cpbf.pdf
VS-HFA280NJ60CPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 600V 280A TO244AB
Packaging: Tray
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 280A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 210 A
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
товар відсутній
VS-HFA60EA120P
VS-HFA60EA120P
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 1200V 30A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
товар відсутній
VS-HFA60FA120P VS-HFA60FA120P.pdf
VS-HFA60FA120P
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 1200V 30A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 123 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
товар відсутній
VS-HFA70FA120 vshfa70f.pdf
VS-HFA70FA120
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 1200V 70A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 51 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 70A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.8 V @ 60 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
товар відсутній
VS-HFA80FA120P VS-HFA80FA120P.pdf
VS-HFA80FA120P
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE HEXFRED 40A 1200V SOT-227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 40A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 40 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
товар відсутній
VS-100BGQ015HF4
VS-100BGQ015HF4
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 15V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3800pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 100 A
Current - Reverse Leakage @ Vr: 18 mA @ 15 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
VS-100BGQ030HF4
VS-100BGQ030HF4
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 100 A
Current - Reverse Leakage @ Vr: 2.4 mA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
VS-100BGQ045HF4
VS-100BGQ045HF4
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2700pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
VS-10CTQ150-1PBF VS-10CTQ150%28SPBF%2C-1PBF%29.pdf
VS-10CTQ150-1PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 150V 5A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
VS-10CWH02FN-M3 vs-10cwh02f.pdf
VS-10CWH02FN-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 10A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 200 V
на замовлення 10735 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+46.55 грн
75+ 35.75 грн
150+ 28.33 грн
525+ 22.53 грн
1050+ 22.29 грн
Мінімальне замовлення: 7
VS-10ETF02FP-M3 vs-10etf02_04_06fp-m3.pdf
VS-10ETF02FP-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 10A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
товар відсутній
VS-10ETF02-M3 vs-10etf0m3.pdf
VS-10ETF02-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
товар відсутній
VS-10ETF02SPBF VS-10ETF..SPbF.pdf
VS-10ETF02SPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
товар відсутній
VS-10ETF04FP-M3 vs-10etf02_04_06fp-m3.pdf
VS-10ETF04FP-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 400V 10A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
товар відсутній
VS-10ETF06FP-M3 vs-10etf02_04_06fp-m3.pdf
VS-10ETF06FP-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 10A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
товар відсутній
VS-10ETF06-M3 vs-10etf0m3.pdf
VS-10ETF06-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товар відсутній
VS-10ETF10-M3 vs-10etf1m3.pdf
VS-10ETF10-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
на замовлення 6971 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+186.18 грн
10+ 161.28 грн
100+ 129.65 грн
500+ 99.96 грн
1000+ 82.83 грн
2000+ 82.39 грн
Мінімальне замовлення: 2
VS-10ETF10SPBF VS-10ETF..(10,12)SPbF.pdf
VS-10ETF10SPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 10A TO263AB
товар відсутній
VS-10ETF12FP-M3 vs-10etf10_12fp-m3.pdf
VS-10ETF12FP-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.2KV 10A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
на замовлення 1469 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+185.42 грн
50+ 143.91 грн
100+ 118.41 грн
500+ 94.03 грн
1000+ 79.78 грн
Мінімальне замовлення: 2
VS-10ETF12SPBF VS-10ETF..(10,12)SPbF.pdf
VS-10ETF12SPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 10A TO263AB
товар відсутній
VS-10ETS08SPBF VS-10ETS..SPbF_Series.pdf
VS-10ETS08SPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
товар відсутній
VS-10RIA100M vs-10ria.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1KV 10A TO208AA
товар відсутній
VS-10RIA120M vs-10ria.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 10A TO208AA
товар відсутній
VS-10RIA40M vs-10ria.pdf
VS-10RIA40M
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 400V 10A TO208AA
Packaging: Tube
Package / Case: TO-208AA, TO-48-3, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 130 mA
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 200A
Current - On State (It (AV)) (Max): 25 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.75 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-208AA (TO-48)
Part Status: Active
Current - On State (It (RMS)) (Max): 10 A
Voltage - Off State: 400 V
товар відсутній
VS-10RIA80M vs-10ria.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 10A TO208AA
товар відсутній
VS-10TQ035-N3 VS-10TQ(PbF,M3).pdf
VS-10TQ035-N3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
товар відсутній
VS-10TQ045-N3 VS-10TQ(PbF,M3).pdf
VS-10TQ045-N3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
товар відсутній
VS-10WQ045FNHM3 vs10wq045f.pdf
VS-10WQ045FNHM3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO252
товар відсутній
VS-112CNQ030ASLPBF VS-112CNQ030APbf.pdf
VS-112CNQ030ASLPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 30V D618SL
товар відсутній
VS-112CNQ030ASMPBF VS-112CNQ030APbf.pdf
VS-112CNQ030ASMPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 30V D618SM
товар відсутній
VS-12CWQ04FNHM3 vs12cwq04f.pdf
VS-12CWQ04FNHM3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 40V 6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 12 A
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
Qualification: AEC-Q101
товар відсутній
VS-12CWQ06FN-M3 vs-12cwq06f.pdf
VS-12CWQ06FN-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 60V 6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 6 A
Current - Reverse Leakage @ Vr: 3 mA @ 60 V
на замовлення 5678 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+63.33 грн
75+ 48.82 грн
150+ 38.68 грн
525+ 30.77 грн
1050+ 25.07 грн
2025+ 23.6 грн
5025+ 22.11 грн
Мінімальне замовлення: 5
VS-12CWQ10FN-M3 12cwq10f.pdf
VS-12CWQ10FN-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 100V 6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 12 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
на замовлення 1618 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+66.38 грн
75+ 50.94 грн
150+ 40.37 грн
525+ 32.11 грн
1050+ 26.16 грн
Мінімальне замовлення: 5
VS-12EWH06FN-M3 vs-12ewh06fn-m3.pdf
VS-12EWH06FN-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 12A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 2697 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+80.88 грн
75+ 62.46 грн
150+ 49.5 грн
525+ 39.37 грн
1050+ 32.07 грн
2025+ 30.19 грн
Мінімальне замовлення: 4
VS-12TTS08-M3 vs-12tts08-m3.pdf
VS-12TTS08-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 12.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 95A @ 50Hz
Current - On State (It (AV)) (Max): 8 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.2 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-220-3
Part Status: Active
Current - On State (It (RMS)) (Max): 12.5 A
Voltage - Off State: 800 V
на замовлення 678 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+220.52 грн
50+ 168.4 грн
100+ 144.35 грн
500+ 120.41 грн
Мінімальне замовлення: 2
VS-12TTS08SPBF VS-12TTS08SPbF.pdf
VS-12TTS08SPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 12.5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 95A @ 50Hz
Current - On State (It (AV)) (Max): 8 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.2 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-263AB (D²PAK)
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 12.5 A
Voltage - Off State: 800 V
товар відсутній
VS-150EBU04HF4
VS-150EBU04HF4
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 400V 150A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
на замовлення 289 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+622.64 грн
25+ 478.61 грн
100+ 428.23 грн
VS-150U100DL vs-150urseries.pdf
VS-150U100DL
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1000V 150A DO-8
товар відсутній
VS-150U120DL vs-150urseries.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1200V 150A DO-8
товар відсутній
VS-150U120DM12 vs-150urseries.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1200V 150A DO-8
товар відсутній
VS-150U80DL vs-150urseries.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 800V 150A DO-8
товар відсутній
VS-150UR100DL vs-150urseries.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1000V 150A DO-8
товар відсутній
VS-150UR120D vs-150urseries.pdf
VS-150UR120D
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP REV 1.2KV 150A DO205AA
Packaging: Tube
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.47 V @ 600 A
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3088.04 грн
10+ 2774.91 грн
VS-150UR120DM12 vs-150urseries.pdf
VS-150UR120DM12
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1200V 150A DO-8
товар відсутній
VS-150UR60D vs-150urseries.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 150A DO-8
товар відсутній
VS-150UR80D vs-150urseries.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 800V 150A DO-8
товар відсутній
VS-150UR80DL vs-150urseries.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 800V 150A DO-8
товар відсутній
VS-15CTQ040-1PBF VS-15CTQ%28SPbF%2C-1PbF%29.pdf
VS-15CTQ040-1PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 40V 15A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
Qualification: AEC-Q101
товар відсутній
VS-15ETH03-1PBF VS-15ETH03SPbF%281PbF%29.pdf
VS-15ETH03-1PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 15A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
Qualification: AEC-Q101
товар відсутній
VS-15ETH03SPBF VS-15ETH03SPbF%281PbF%29.pdf
VS-15ETH03SPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
Qualification: AEC-Q101
товар відсутній
VS-15ETH06-1PBF VS-15ETH06SPbF_VS-15ETH06-1PbF.pdf
VS-15ETH06-1PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO262AA
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
Qualification: AEC-Q101
товар відсутній
VS-15ETH06FP-N3 VS-15ETH06PbF_FPPbF_VS-15ETH06-NE_FP-N3.pdf
VS-15ETH06FP-N3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 15A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
на замовлення 1526 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+125.9 грн
50+ 97.15 грн
100+ 79.94 грн
500+ 63.48 грн
1000+ 53.86 грн
Мінімальне замовлення: 3
VS-15ETH06SPBF VS-15ETH06SPbF_VS-15ETH06-1PbF.pdf
VS-15ETH06SPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Qualification: AEC-Q101
товар відсутній
VS-15ETL06FP-N3 VS-15ETL06PbF_FPPbf_VS-15ETL06-N3_FP-N3.pdf
VS-15ETL06FP-N3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 15A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Qualification: AEC-Q101
на замовлення 5012 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+154.13 грн
50+ 119.23 грн
100+ 98.1 грн
500+ 77.9 грн
1000+ 66.1 грн
2000+ 62.79 грн
5000+ 59.44 грн
Мінімальне замовлення: 2
VS-15ETL06SPBF VS-15ETH06SPbF_VS-15ETH06-1PbF.pdf
VS-15ETL06SPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Qualification: AEC-Q101
товар відсутній
VS-15ETX06-1PBF VS-15ETX06SPbF_VS-15ETX06-1PbF.pdf
VS-15ETX06-1PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO262AA
товар відсутній
VS-15ETX06-N3 VS-15ETX06PbF_FPPbF_VS-15ETX06-N3_FP-N3.pdf
VS-15ETX06-N3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO220AC
товар відсутній
VS-15ETX06SPBF VS-15ETX06SPbF_VS-15ETX06-1PbF.pdf
VS-15ETX06SPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
товар відсутній
VS-16CTQ060G-1PBF VS-16CTQ...GSPBF,...G-1PBF.pdf
VS-16CTQ060G-1PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 60V TO262-3
товар відсутній
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