Технічний опис P6SMB56CA M4G Taiwan Semiconductor
Category: Bidirectional SMD transil diodes, Description: Diode: TVS; 600W; 56V; 8.1A; bidirectional; ±5%; SMB; reel,tape, Type of diode: TVS, Peak pulse power dissipation: 0.6kW, Max. off-state voltage: 47.8V, Breakdown voltage: 56V, Max. forward impulse current: 8.1A, Semiconductor structure: bidirectional, Tolerance: ±5%, Case: SMB, Mounting: SMD, Leakage current: 1µA, Kind of package: reel; tape, кількість в упаковці: 5 шт.
Інші пропозиції P6SMB56CA M4G
| Фото | Назва | Виробник | Інформація |
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P6SMB56CA M4G | Виробник : TAIWAN SEMICONDUCTOR |
 Category: Bidirectional SMD transil diodesDescription: Diode: TVS; 600W; 56V; 8.1A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 47.8V Breakdown voltage: 56V Max. forward impulse current: 8.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape кількість в упаковці: 5 шт |
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P6SMB56CA M4G | Виробник : Taiwan Semiconductor Corporation |
Description: TVS DIODE 47.8V 77V DO214AA |
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P6SMB56CA M4G | Виробник : TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 56V; 8.1A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 47.8V Breakdown voltage: 56V Max. forward impulse current: 8.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
товар відсутній |