P6SMB120CAHM4G TAIWAN SEMICONDUCTOR
Виробник: TAIWAN SEMICONDUCTORCategory: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 120V; 3.8A; bidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Case: SMB
Tolerance: ±5%
Breakdown voltage: 120V
Max. off-state voltage: 102V
Semiconductor structure: bidirectional
Max. forward impulse current: 3.8A
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
кількість в упаковці: 1 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис P6SMB120CAHM4G TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes, Description: Diode: TVS; 600W; 120V; 3.8A; bidirectional; ±5%; SMB; reel,tape, Mounting: SMD, Case: SMB, Tolerance: ±5%, Breakdown voltage: 120V, Max. off-state voltage: 102V, Semiconductor structure: bidirectional, Max. forward impulse current: 3.8A, Leakage current: 1µA, Kind of package: reel; tape, Type of diode: TVS, Peak pulse power dissipation: 0.6kW, кількість в упаковці: 1 шт.
Інші пропозиції P6SMB120CAHM4G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
|
|
P6SMB120CAHM4G | Виробник : TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 120V; 3.8A; bidirectional; ±5%; SMB; reel,tape Mounting: SMD Case: SMB Tolerance: ±5% Breakdown voltage: 120V Max. off-state voltage: 102V Semiconductor structure: bidirectional Max. forward impulse current: 3.8A Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 0.6kW |
товар відсутній |