Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (164772) > Сторінка 1121 з 2747
Фото | Назва | Виробник | Інформація |
Доступність |
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STB40N60M2 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 250W; D2PAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 250W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 88mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Version: ESD кількість в упаковці: 1000 шт |
товару немає в наявності |
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STB40NF10LT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 25A; 150W; D2PAK Power dissipation: 150W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Technology: SuperMesh™ Kind of channel: enhanced Gate-source voltage: ±15V Mounting: SMD Case: D2PAK Drain-source voltage: 100V Drain current: 25A On-state resistance: 36mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
на замовлення 581 шт: термін постачання 14-21 дні (днів) |
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STB40NF20 | STMicroelectronics | STB40NF20 SMD N channel transistors |
товару немає в наявності |
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STB42N65M5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20.8A; 190W; D2PAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.8A Power dissipation: 190W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 79mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Version: ESD кількість в упаковці: 1 шт |
товару немає в наявності |
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STB43N65M5 | STMicroelectronics | STB43N65M5 SMD N channel transistors |
товару немає в наявності |
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STB45N60DM2AG | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 21A; Idm: 136A; 250W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 21A Pulsed drain current: 136A Power dissipation: 250W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 93mΩ Mounting: SMD Kind of channel: enhanced Version: ESD кількість в упаковці: 1000 шт |
товару немає в наявності |
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STB45N65M5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 710V; 22A; Idm: 140A; 210W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 710V Drain current: 22A Pulsed drain current: 140A Power dissipation: 210W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 78mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1000 шт |
товару немає в наявності |
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STB55NF06LT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 39A; 95W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 39A Power dissipation: 95W Case: D2PAK Gate-source voltage: ±16V On-state resistance: 20mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
товару немає в наявності |
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STB55NF06T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 110W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 35A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 723 шт: термін постачання 14-21 дні (днів) |
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STB57N65M5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 26.5A; 250W; D2PAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 26.5A Power dissipation: 250W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 63mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Version: ESD кількість в упаковці: 1 шт |
товару немає в наявності |
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STB60NF06LT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±15V On-state resistance: 16mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Version: ESD кількість в упаковці: 1 шт |
товару немає в наявності |
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STB60NF06T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Version: ESD кількість в упаковці: 1 шт |
на замовлення 832 шт: термін постачання 14-21 дні (днів) |
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STB6NK90ZT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 5.8A; 140W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 5.8A Power dissipation: 140W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 943 шт: термін постачання 14-21 дні (днів) |
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STB75NF20 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 200V; 75A; 190W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 200V Drain current: 75A Power dissipation: 190W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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STB75NF75LT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 70A; 300W; D2PAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 75V Drain current: 70A Power dissipation: 300W Case: D2PAK Gate-source voltage: ±15V On-state resistance: 13mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Version: ESD кількість в упаковці: 1 шт |
на замовлення 875 шт: термін постачання 14-21 дні (днів) |
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STB75NF75T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 75V; 70A; Idm: 320A Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 75V Drain current: 70A Pulsed drain current: 320A Power dissipation: 300W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 160nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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STB7NK80ZT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.3A; 125W; D2PAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.3A Power dissipation: 125W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 1.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Version: ESD кількість в упаковці: 1 шт |
на замовлення 567 шт: термін постачання 14-21 дні (днів) |
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STB80N20M5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 38A; 190W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 38A Power dissipation: 190W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 23mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
товару немає в наявності |
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STB80NF10T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 300W; D2PAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 300W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Version: ESD кількість в упаковці: 1 шт |
товару немає в наявності |
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STB8N65M5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.4A; 70W; D2PAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.4A Power dissipation: 70W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 0.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Version: ESD кількість в упаковці: 1 шт |
на замовлення 15 шт: термін постачання 14-21 дні (днів) |
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STB9NK50ZT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 4.5A; 110W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 4.5A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1000 шт |
товару немає в наявності |
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STB9NK60ZT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 125W; D2PAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.4A Power dissipation: 125W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Version: ESD кількість в упаковці: 1 шт |
товару немає в наявності |
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STBB1-APUR | STMicroelectronics | STBB1-APUR Voltage regulators - DC/DC circuits |
товару немає в наявності |
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STBR3012G2-TR | STMicroelectronics |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAKHV; Ufmax: 1.3V; Ifsm: 300A Mounting: SMD Case: D2PAKHV Kind of package: reel; tape Max. off-state voltage: 1.2kV Max. load current: 45A Max. forward voltage: 1.3V Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 300A Leakage current: 2µA Type of diode: rectifying кількість в упаковці: 1 шт |
товару немає в наявності |
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STBR3012G2Y-TR | STMicroelectronics |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAKHV; Ufmax: 1.3V; Ifsm: 300A Mounting: SMD Case: D2PAKHV Kind of package: reel; tape Max. off-state voltage: 1.2kV Max. load current: 45A Max. forward voltage: 1.3V Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 300A Leakage current: 2µA Application: automotive industry Type of diode: rectifying кількість в упаковці: 1 шт |
товару немає в наявності |
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STBR3012W | STMicroelectronics | STBR3012W THT universal diodes |
товару немає в наявності |
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STBR3012WY | STMicroelectronics | STBR3012WY THT universal diodes |
товару немає в наявності |
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STBR6012W | STMicroelectronics | STBR6012W THT universal diodes |
товару немає в наявності |
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STBR6012WY | STMicroelectronics | STBR6012WY THT universal diodes |
товару немає в наявності |
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STC3100IST | STMicroelectronics |
Category: Battery and battery cells controllers Description: IC: PMIC; battery monitor; Li-Ion; TSSOP8; 2.7÷5.5VDC Type of integrated circuit: PMIC Kind of integrated circuit: battery monitor Supply voltage: 2.7...5.5V DC Case: TSSOP8 Operating temperature: -40...85°C Mounting: SMD Integrated circuit features: Li-Ion кількість в упаковці: 1 шт |
товару немає в наявності |
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STC3115AIJT | STMicroelectronics | STC3115AIJT Battery and battery cells controllers |
товару немає в наявності |
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STC4054GR | STMicroelectronics |
Category: Battery and battery cells controllers Description: IC: PMIC; battery charging controller; Li-Ion; Iout: 800mA; 4.2V Type of integrated circuit: PMIC Kind of integrated circuit: battery charging controller Integrated circuit features: Li-Ion Mounting: SMD Output current: 0.8A Output voltage: 4.2V Case: SOT23-5 Supply voltage: 4.25...6.5V DC Operating temperature: -40...85°C кількість в упаковці: 1 шт |
на замовлення 1459 шт: термін постачання 14-21 дні (днів) |
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STCC2540IQTR | STMicroelectronics |
Category: Integrated circuits - others Description: IC: power switch; USB switch; VFQFPN16; reel,tape; 4.5÷5.5VDC Type of integrated circuit: power switch Kind of integrated circuit: USB switch Case: VFQFPN16 Mounting: SMD Kind of package: reel; tape Output current: 2.8A Supply voltage: 4.5...5.5V DC Number of channels: 1 On-state resistance: 65mΩ Kind of output: N-Channel кількість в упаковці: 3000 шт |
товару немає в наявності |
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STCN75DS2F | STMicroelectronics | STCN75DS2F Temperature transducers |
товару немає в наявності |
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STCS05DR | STMicroelectronics | STCS05DR LED drivers |
товару немає в наявності |
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STCS1APHR | STMicroelectronics |
Category: LED drivers Description: IC: driver; LED driver; PowerSO8; 1.5A; Ch: 1; PWM; 4.5÷40V Type of integrated circuit: driver Kind of integrated circuit: LED driver Input voltage: 4.5...40V Output current: 1.5A Case: PowerSO8 Mounting: SMD Number of channels: 1 Operating temperature: -40...150°C Kind of package: reel; tape Integrated circuit features: PWM Application: automotive industry кількість в упаковці: 1 шт |
товару немає в наявності |
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STCS1APUR | STMicroelectronics | STCS1APUR LED drivers |
товару немає в наявності |
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STCS1PHR | STMicroelectronics |
Category: LED drivers Description: IC: driver; LED driver; PowerSO8; 1.5A; Ch: 1; PWM; 4.5÷40V Type of integrated circuit: driver Kind of integrated circuit: LED driver Input voltage: 4.5...40V Output current: 1.5A Case: PowerSO8 Mounting: SMD Number of channels: 1 Operating temperature: -40...150°C Kind of package: reel; tape Integrated circuit features: PWM кількість в упаковці: 1 шт |
товару немає в наявності |
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STCS1PUR | STMicroelectronics |
Category: LED drivers Description: IC: driver; LED driver; DFN8; 1.5A; Ch: 1; PWM; 4.5÷40V Type of integrated circuit: driver Kind of integrated circuit: LED driver Input voltage: 4.5...40V Output current: 1.5A Case: DFN8 Mounting: SMD Number of channels: 1 Operating temperature: -40...150°C Kind of package: reel; tape Integrated circuit features: PWM кількість в упаковці: 1 шт |
товару немає в наявності |
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STCS2ASPR | STMicroelectronics |
Category: LED drivers Description: IC: driver; LED driver; PowerSO10; 2A; Ch: 1; PWM; 4.5÷40V Type of integrated circuit: driver Kind of integrated circuit: LED driver Input voltage: 4.5...40V Output current: 2A Case: PowerSO10 Mounting: SMD Number of channels: 1 Operating temperature: -40...125°C Kind of package: reel; tape Integrated circuit features: PWM кількість в упаковці: 1 шт |
на замовлення 2211 шт: термін постачання 14-21 дні (днів) |
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STCS2SPR | STMicroelectronics |
Category: LED drivers Description: IC: driver; LED driver; PowerSO10; 2A; Ch: 1; PWM; 4.5÷40V Type of integrated circuit: driver Kind of integrated circuit: LED driver Input voltage: 4.5...40V Output current: 2A Case: PowerSO10 Mounting: SMD Number of channels: 1 Operating temperature: -40...150°C Kind of package: reel; tape Integrated circuit features: PWM кількість в упаковці: 1 шт |
на замовлення 557 шт: термін постачання 14-21 дні (днів) |
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STD100N10F7 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 62A; Idm: 320A; 120W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 62A Pulsed drain current: 320A Power dissipation: 120W Case: DPAK Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
товару немає в наявності |
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STD10N60M2 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.9A; 85W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.9A Power dissipation: 85W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Version: ESD кількість в упаковці: 1 шт |
на замовлення 2410 шт: термін постачання 14-21 дні (днів) |
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STD10NF10T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9A; 50W; DPAK Power dissipation: 50W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Technology: SuperMesh™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: DPAK Drain-source voltage: 100V Drain current: 9A On-state resistance: 0.13Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
на замовлення 2530 шт: термін постачання 14-21 дні (днів) |
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STD10NM60N | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 70W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 70W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.55Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2245 шт: термін постачання 14-21 дні (днів) |
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STD10NM60ND | STMicroelectronics | STD10NM60ND SMD N channel transistors |
товару немає в наявності |
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STD10P6F6 | STMicroelectronics |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -7.2A; 35W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -7.2A Power dissipation: 35W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2049 шт: термін постачання 14-21 дні (днів) |
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STD11NM60ND | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.3A; 90W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.3A Power dissipation: 90W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.45Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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STD12NF06L-1 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 12A; 30W; IPAK Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Power dissipation: 30W Case: IPAK Gate-source voltage: ±16V On-state resistance: 90mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 167 шт: термін постачання 14-21 дні (днів) |
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STD12NF06T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; 30W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 8.5A Power dissipation: 30W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 783 шт: термін постачання 14-21 дні (днів) |
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STD130N6F7 | STMicroelectronics | STD130N6F7 SMD N channel transistors |
товару немає в наявності |
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STD13N60DM2 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 44A; 110W; DPAK; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 44A Power dissipation: 110W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.365Ω Mounting: SMD Kind of channel: enhanced Version: ESD кількість в упаковці: 2500 шт |
товару немає в наявності |
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STD13N60M2 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 110W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Version: ESD кількість в упаковці: 1 шт |
на замовлення 2077 шт: термін постачання 14-21 дні (днів) |
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STD13NM60N | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.93A; 90W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.93A Power dissipation: 90W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.36Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2379 шт: термін постачання 14-21 дні (днів) |
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STD15NF10T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 70W; DPAK Power dissipation: 70W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Technology: SuperMesh™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: DPAK Drain-source voltage: 100V Drain current: 16A On-state resistance: 65mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
на замовлення 337 шт: термін постачання 14-21 дні (днів) |
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STD16N65M5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 710V Drain current: 12A Power dissipation: 90W Case: DPAK Gate-source voltage: ±25V On-state resistance: 279mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2460 шт: термін постачання 14-21 дні (днів) |
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STD16NF06LT4 | STMicroelectronics | STD16NF06LT4 SMD N channel transistors |
товару немає в наявності |
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STD16NF06T4 | STMicroelectronics | STD16NF06T4 SMD N channel transistors |
товару немає в наявності |
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STD16NF25 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; 85W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 8.5A Power dissipation: 85W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.235Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
товару немає в наявності |
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STD17NF03LT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 30W; DPAK; ESD Mounting: SMD Kind of package: reel; tape Version: ESD Technology: SuperMesh™ Kind of channel: enhanced Gate-source voltage: ±16V Case: DPAK Drain-source voltage: 30V Drain current: 12A On-state resistance: 60mΩ Type of transistor: N-MOSFET Power dissipation: 30W Polarisation: unipolar кількість в упаковці: 1 шт |
на замовлення 4751 шт: термін постачання 14-21 дні (днів) |
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STB40N60M2 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 250W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 88mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Version: ESD
кількість в упаковці: 1000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 250W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 88mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Version: ESD
кількість в упаковці: 1000 шт
товару немає в наявності
STB40NF10LT4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; 150W; D2PAK
Power dissipation: 150W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±15V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 100V
Drain current: 25A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; 150W; D2PAK
Power dissipation: 150W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±15V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 100V
Drain current: 25A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 581 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 107.96 грн |
10+ | 93.05 грн |
19+ | 55.89 грн |
51+ | 53.23 грн |
STB42N65M5 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.8A; 190W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Version: ESD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.8A; 190W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Version: ESD
кількість в упаковці: 1 шт
товару немає в наявності
STB43N65M5 |
Виробник: STMicroelectronics
STB43N65M5 SMD N channel transistors
STB43N65M5 SMD N channel transistors
товару немає в наявності
STB45N60DM2AG |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; Idm: 136A; 250W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: SMD
Kind of channel: enhanced
Version: ESD
кількість в упаковці: 1000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; Idm: 136A; 250W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: SMD
Kind of channel: enhanced
Version: ESD
кількість в упаковці: 1000 шт
товару немає в наявності
STB45N65M5 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 22A; Idm: 140A; 210W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 22A
Pulsed drain current: 140A
Power dissipation: 210W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 78mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 22A; Idm: 140A; 210W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 22A
Pulsed drain current: 140A
Power dissipation: 210W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 78mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1000 шт
товару немає в наявності
STB55NF06LT4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; 95W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Power dissipation: 95W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; 95W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Power dissipation: 95W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товару немає в наявності
STB55NF06T4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 723 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 231.2 грн |
10+ | 102.26 грн |
24+ | 45.24 грн |
64+ | 42.58 грн |
STB57N65M5 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26.5A; 250W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26.5A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 63mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Version: ESD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26.5A; 250W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26.5A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 63mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Version: ESD
кількість в упаковці: 1 шт
товару немає в наявності
STB60NF06LT4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±15V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Version: ESD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±15V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Version: ESD
кількість в упаковці: 1 шт
товару немає в наявності
STB60NF06T4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Version: ESD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Version: ESD
кількість в упаковці: 1 шт
на замовлення 832 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 132.8 грн |
5+ | 113.32 грн |
11+ | 94.04 грн |
31+ | 88.71 грн |
250+ | 85.17 грн |
STB6NK90ZT4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5.8A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5.8A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5.8A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5.8A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 943 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 245.53 грн |
9+ | 124.37 грн |
24+ | 112.67 грн |
5000+ | 109.12 грн |
STB75NF20 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 200V; 75A; 190W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 75A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 200V; 75A; 190W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 75A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
STB75NF75LT4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; 300W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Version: ESD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; 300W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Version: ESD
кількість в упаковці: 1 шт
на замовлення 875 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 209.23 грн |
5+ | 179.65 грн |
8+ | 138.39 грн |
21+ | 131.3 грн |
250+ | 125.09 грн |
STB75NF75T4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 75V; 70A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Pulsed drain current: 320A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 75V; 70A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Pulsed drain current: 320A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
STB7NK80ZT4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.3A; 125W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.3A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Version: ESD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.3A; 125W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.3A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Version: ESD
кількість в упаковці: 1 шт
на замовлення 567 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 225.47 грн |
10+ | 151.09 грн |
14+ | 78.96 грн |
37+ | 74.52 грн |
STB80N20M5 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 38A; 190W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 38A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 38A; 190W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 38A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товару немає в наявності
STB80NF10T4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 300W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Version: ESD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 300W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Version: ESD
кількість в упаковці: 1 шт
товару немає в наявності
STB8N65M5 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.4A; 70W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.4A
Power dissipation: 70W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Version: ESD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.4A; 70W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.4A
Power dissipation: 70W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Version: ESD
кількість в упаковці: 1 шт
на замовлення 15 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 235.98 грн |
5+ | 197.15 грн |
6+ | 178.32 грн |
16+ | 168.56 грн |
25+ | 162.35 грн |
STB9NK50ZT4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.5A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.5A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.5A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.5A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1000 шт
товару немає в наявності
STB9NK60ZT4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 125W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Version: ESD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 125W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Version: ESD
кількість в упаковці: 1 шт
товару немає в наявності
STBB1-APUR |
Виробник: STMicroelectronics
STBB1-APUR Voltage regulators - DC/DC circuits
STBB1-APUR Voltage regulators - DC/DC circuits
товару немає в наявності
STBR3012G2-TR |
Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAKHV; Ufmax: 1.3V; Ifsm: 300A
Mounting: SMD
Case: D2PAKHV
Kind of package: reel; tape
Max. off-state voltage: 1.2kV
Max. load current: 45A
Max. forward voltage: 1.3V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 300A
Leakage current: 2µA
Type of diode: rectifying
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAKHV; Ufmax: 1.3V; Ifsm: 300A
Mounting: SMD
Case: D2PAKHV
Kind of package: reel; tape
Max. off-state voltage: 1.2kV
Max. load current: 45A
Max. forward voltage: 1.3V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 300A
Leakage current: 2µA
Type of diode: rectifying
кількість в упаковці: 1 шт
товару немає в наявності
STBR3012G2Y-TR |
Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAKHV; Ufmax: 1.3V; Ifsm: 300A
Mounting: SMD
Case: D2PAKHV
Kind of package: reel; tape
Max. off-state voltage: 1.2kV
Max. load current: 45A
Max. forward voltage: 1.3V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 300A
Leakage current: 2µA
Application: automotive industry
Type of diode: rectifying
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAKHV; Ufmax: 1.3V; Ifsm: 300A
Mounting: SMD
Case: D2PAKHV
Kind of package: reel; tape
Max. off-state voltage: 1.2kV
Max. load current: 45A
Max. forward voltage: 1.3V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 300A
Leakage current: 2µA
Application: automotive industry
Type of diode: rectifying
кількість в упаковці: 1 шт
товару немає в наявності
STC3100IST |
Виробник: STMicroelectronics
Category: Battery and battery cells controllers
Description: IC: PMIC; battery monitor; Li-Ion; TSSOP8; 2.7÷5.5VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: battery monitor
Supply voltage: 2.7...5.5V DC
Case: TSSOP8
Operating temperature: -40...85°C
Mounting: SMD
Integrated circuit features: Li-Ion
кількість в упаковці: 1 шт
Category: Battery and battery cells controllers
Description: IC: PMIC; battery monitor; Li-Ion; TSSOP8; 2.7÷5.5VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: battery monitor
Supply voltage: 2.7...5.5V DC
Case: TSSOP8
Operating temperature: -40...85°C
Mounting: SMD
Integrated circuit features: Li-Ion
кількість в упаковці: 1 шт
товару немає в наявності
STC3115AIJT |
Виробник: STMicroelectronics
STC3115AIJT Battery and battery cells controllers
STC3115AIJT Battery and battery cells controllers
товару немає в наявності
STC4054GR |
Виробник: STMicroelectronics
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; Li-Ion; Iout: 800mA; 4.2V
Type of integrated circuit: PMIC
Kind of integrated circuit: battery charging controller
Integrated circuit features: Li-Ion
Mounting: SMD
Output current: 0.8A
Output voltage: 4.2V
Case: SOT23-5
Supply voltage: 4.25...6.5V DC
Operating temperature: -40...85°C
кількість в упаковці: 1 шт
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; Li-Ion; Iout: 800mA; 4.2V
Type of integrated circuit: PMIC
Kind of integrated circuit: battery charging controller
Integrated circuit features: Li-Ion
Mounting: SMD
Output current: 0.8A
Output voltage: 4.2V
Case: SOT23-5
Supply voltage: 4.25...6.5V DC
Operating temperature: -40...85°C
кількість в упаковці: 1 шт
на замовлення 1459 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 152.86 грн |
11+ | 102.26 грн |
29+ | 93.15 грн |
250+ | 91.38 грн |
500+ | 89.6 грн |
STCC2540IQTR |
Виробник: STMicroelectronics
Category: Integrated circuits - others
Description: IC: power switch; USB switch; VFQFPN16; reel,tape; 4.5÷5.5VDC
Type of integrated circuit: power switch
Kind of integrated circuit: USB switch
Case: VFQFPN16
Mounting: SMD
Kind of package: reel; tape
Output current: 2.8A
Supply voltage: 4.5...5.5V DC
Number of channels: 1
On-state resistance: 65mΩ
Kind of output: N-Channel
кількість в упаковці: 3000 шт
Category: Integrated circuits - others
Description: IC: power switch; USB switch; VFQFPN16; reel,tape; 4.5÷5.5VDC
Type of integrated circuit: power switch
Kind of integrated circuit: USB switch
Case: VFQFPN16
Mounting: SMD
Kind of package: reel; tape
Output current: 2.8A
Supply voltage: 4.5...5.5V DC
Number of channels: 1
On-state resistance: 65mΩ
Kind of output: N-Channel
кількість в упаковці: 3000 шт
товару немає в наявності
STCS1APHR |
Виробник: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; PowerSO8; 1.5A; Ch: 1; PWM; 4.5÷40V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Input voltage: 4.5...40V
Output current: 1.5A
Case: PowerSO8
Mounting: SMD
Number of channels: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Integrated circuit features: PWM
Application: automotive industry
кількість в упаковці: 1 шт
Category: LED drivers
Description: IC: driver; LED driver; PowerSO8; 1.5A; Ch: 1; PWM; 4.5÷40V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Input voltage: 4.5...40V
Output current: 1.5A
Case: PowerSO8
Mounting: SMD
Number of channels: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Integrated circuit features: PWM
Application: automotive industry
кількість в упаковці: 1 шт
товару немає в наявності
STCS1PHR |
Виробник: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; PowerSO8; 1.5A; Ch: 1; PWM; 4.5÷40V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Input voltage: 4.5...40V
Output current: 1.5A
Case: PowerSO8
Mounting: SMD
Number of channels: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Integrated circuit features: PWM
кількість в упаковці: 1 шт
Category: LED drivers
Description: IC: driver; LED driver; PowerSO8; 1.5A; Ch: 1; PWM; 4.5÷40V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Input voltage: 4.5...40V
Output current: 1.5A
Case: PowerSO8
Mounting: SMD
Number of channels: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Integrated circuit features: PWM
кількість в упаковці: 1 шт
товару немає в наявності
STCS1PUR |
Виробник: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; DFN8; 1.5A; Ch: 1; PWM; 4.5÷40V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Input voltage: 4.5...40V
Output current: 1.5A
Case: DFN8
Mounting: SMD
Number of channels: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Integrated circuit features: PWM
кількість в упаковці: 1 шт
Category: LED drivers
Description: IC: driver; LED driver; DFN8; 1.5A; Ch: 1; PWM; 4.5÷40V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Input voltage: 4.5...40V
Output current: 1.5A
Case: DFN8
Mounting: SMD
Number of channels: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Integrated circuit features: PWM
кількість в упаковці: 1 шт
товару немає в наявності
STCS2ASPR |
Виробник: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; PowerSO10; 2A; Ch: 1; PWM; 4.5÷40V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Input voltage: 4.5...40V
Output current: 2A
Case: PowerSO10
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Integrated circuit features: PWM
кількість в упаковці: 1 шт
Category: LED drivers
Description: IC: driver; LED driver; PowerSO10; 2A; Ch: 1; PWM; 4.5÷40V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Input voltage: 4.5...40V
Output current: 2A
Case: PowerSO10
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Integrated circuit features: PWM
кількість в упаковці: 1 шт
на замовлення 2211 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 244.58 грн |
3+ | 218.34 грн |
6+ | 176.54 грн |
17+ | 166.78 грн |
250+ | 160.57 грн |
STCS2SPR |
Виробник: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; PowerSO10; 2A; Ch: 1; PWM; 4.5÷40V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Input voltage: 4.5...40V
Output current: 2A
Case: PowerSO10
Mounting: SMD
Number of channels: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Integrated circuit features: PWM
кількість в упаковці: 1 шт
Category: LED drivers
Description: IC: driver; LED driver; PowerSO10; 2A; Ch: 1; PWM; 4.5÷40V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Input voltage: 4.5...40V
Output current: 2A
Case: PowerSO10
Mounting: SMD
Number of channels: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Integrated circuit features: PWM
кількість в упаковці: 1 шт
на замовлення 557 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 242.67 грн |
5+ | 207.28 грн |
6+ | 174.77 грн |
17+ | 165.01 грн |
100+ | 158.8 грн |
STD100N10F7 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; Idm: 320A; 120W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 62A
Pulsed drain current: 320A
Power dissipation: 120W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; Idm: 320A; 120W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 62A
Pulsed drain current: 320A
Power dissipation: 120W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товару немає в наявності
STD10N60M2 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.9A; 85W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.9A
Power dissipation: 85W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Version: ESD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.9A; 85W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.9A
Power dissipation: 85W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Version: ESD
кількість в упаковці: 1 шт
на замовлення 2410 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 108.91 грн |
5+ | 94.89 грн |
15+ | 72.75 грн |
40+ | 68.31 грн |
500+ | 67.42 грн |
STD10NF10T4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; 50W; DPAK
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Drain-source voltage: 100V
Drain current: 9A
On-state resistance: 0.13Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; 50W; DPAK
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Drain-source voltage: 100V
Drain current: 9A
On-state resistance: 0.13Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 2530 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 52.55 грн |
10+ | 43.85 грн |
42+ | 24.84 грн |
115+ | 23.51 грн |
STD10NM60N |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2245 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 150 грн |
10+ | 80.15 грн |
20+ | 52.34 грн |
55+ | 48.79 грн |
STD10NM60ND |
Виробник: STMicroelectronics
STD10NM60ND SMD N channel transistors
STD10NM60ND SMD N channel transistors
товару немає в наявності
STD10P6F6 |
Виробник: STMicroelectronics
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.2A; 35W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.2A
Power dissipation: 35W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.2A; 35W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.2A
Power dissipation: 35W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2049 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 77.39 грн |
10+ | 61.54 грн |
24+ | 44.36 грн |
65+ | 41.7 грн |
500+ | 39.92 грн |
STD11NM60ND |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.3A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.3A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.3A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.3A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
STD12NF06L-1 |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 12A; 30W; IPAK
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 30W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 90mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 12A; 30W; IPAK
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 30W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 90mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 167 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 64.97 грн |
10+ | 39.71 грн |
41+ | 25.73 грн |
112+ | 23.95 грн |
STD12NF06T4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; 30W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.5A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; 30W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.5A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 783 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 36.02 грн |
25+ | 31.14 грн |
44+ | 23.86 грн |
119+ | 22.62 грн |
2500+ | 22.27 грн |
STD130N6F7 |
Виробник: STMicroelectronics
STD130N6F7 SMD N channel transistors
STD130N6F7 SMD N channel transistors
товару немає в наявності
STD13N60DM2 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 44A; 110W; DPAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.365Ω
Mounting: SMD
Kind of channel: enhanced
Version: ESD
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 44A; 110W; DPAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.365Ω
Mounting: SMD
Kind of channel: enhanced
Version: ESD
кількість в упаковці: 2500 шт
товару немає в наявності
STD13N60M2 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Version: ESD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Version: ESD
кількість в упаковці: 1 шт
на замовлення 2077 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 159.55 грн |
10+ | 127.13 грн |
12+ | 90.49 грн |
32+ | 86.05 грн |
500+ | 83.39 грн |
STD13NM60N |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.93A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.93A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.93A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.93A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2379 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 117.51 грн |
5+ | 100.42 грн |
14+ | 74.52 грн |
39+ | 70.08 грн |
STD15NF10T4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 70W; DPAK
Power dissipation: 70W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Drain-source voltage: 100V
Drain current: 16A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 70W; DPAK
Power dissipation: 70W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Drain-source voltage: 100V
Drain current: 16A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 337 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 109.87 грн |
32+ | 33.9 грн |
88+ | 30.87 грн |
STD16N65M5 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 12A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 279mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 12A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 279mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2460 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 236.94 грн |
5+ | 200.84 грн |
7+ | 168.56 грн |
17+ | 158.8 грн |
STD16NF06LT4 |
Виробник: STMicroelectronics
STD16NF06LT4 SMD N channel transistors
STD16NF06LT4 SMD N channel transistors
товару немає в наявності
STD16NF06T4 |
Виробник: STMicroelectronics
STD16NF06T4 SMD N channel transistors
STD16NF06T4 SMD N channel transistors
товару немає в наявності
STD16NF25 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; 85W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Power dissipation: 85W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; 85W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Power dissipation: 85W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товару немає в наявності
STD17NF03LT4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 30W; DPAK; ESD
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±16V
Case: DPAK
Drain-source voltage: 30V
Drain current: 12A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 30W; DPAK; ESD
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±16V
Case: DPAK
Drain-source voltage: 30V
Drain current: 12A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
кількість в упаковці: 1 шт
на замовлення 4751 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 62.1 грн |
50+ | 40.63 грн |
58+ | 17.97 грн |
158+ | 17 грн |