STB45N60DM2AG STMicroelectronics
Виробник: STMicroelectronicsDescription: MOSFET N-CH 600V 34A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 245.19 грн |
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Технічний опис STB45N60DM2AG STMicroelectronics
Description: MOSFET N-CH 600V 34A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 17A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V, Qualification: AEC-Q101.
Інші пропозиції STB45N60DM2AG за ціною від 228.73 грн до 470.43 грн
| Фото | Назва | Виробник | Інформація |
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STB45N60DM2AG | Виробник : STMicroelectronics |
Trans MOSFET N-CH 600V 34A Automotive 3-Pin(2+Tab) D2PAK T/R |
на замовлення 764 шт: термін постачання 21-31 дні (днів) |
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STB45N60DM2AG | Виробник : STMicroelectronics |
Description: MOSFET N-CH 600V 34A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 17A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V Qualification: AEC-Q101 |
на замовлення 1435 шт: термін постачання 21-31 дні (днів) |
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STB45N60DM2AG | Виробник : STMicroelectronics |
MOSFETs Automotive-grade N-channel 600 V, 0.085 Ohm typ 34 A MDmesh DM2 Power MOSFET |
на замовлення 980 шт: термін постачання 21-30 дні (днів) |
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| STB45N60DM2AG | Виробник : STMicroelectronics |
Trans MOSFET N-CH 600V 34A Automotive 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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| STB45N60DM2AG | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 21A; Idm: 136A; 250W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 21A Pulsed drain current: 136A Power dissipation: 250W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 93mΩ Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1000 шт |
товар відсутній |
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| STB45N60DM2AG | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 21A; Idm: 136A; 250W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 21A Pulsed drain current: 136A Power dissipation: 250W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 93mΩ Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |