Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (166740) > Сторінка 1117 з 2779
Фото | Назва | Виробник | Інформація |
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STD10N60M2 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.9A; 85W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.9A Power dissipation: 85W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 2418 шт: термін постачання 14-21 дні (днів) |
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STD10NF10T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9A; 50W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 9A Power dissipation: 50W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 2530 шт: термін постачання 14-21 дні (днів) |
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STD10NM60N | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 70W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 70W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.55Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2347 шт: термін постачання 14-21 дні (днів) |
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STD10NM60ND | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 32A; 70W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Pulsed drain current: 32A Power dissipation: 70W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.6Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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STD10P6F6 | STMicroelectronics |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -7.2A; 35W; DPAK Case: DPAK Mounting: SMD On-state resistance: 0.16Ω Kind of package: reel; tape Power dissipation: 35W Drain-source voltage: -60V Drain current: -7.2A Type of transistor: P-MOSFET Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
на замовлення 2077 шт: термін постачання 14-21 дні (днів) |
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STD11NM60ND | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.3A; 90W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.3A Power dissipation: 90W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.45Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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STD12NF06L-1 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 12A; 30W; IPAK Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Power dissipation: 30W Case: IPAK Gate-source voltage: ±16V On-state resistance: 90mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 167 шт: термін постачання 14-21 дні (днів) |
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STD12NF06T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; 30W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 8.5A Power dissipation: 30W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 783 шт: термін постачання 14-21 дні (днів) |
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STD130N6F7 | STMicroelectronics | STD130N6F7 SMD N channel transistors |
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STD13N60DM2 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 44A; 110W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 44A Power dissipation: 110W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.365Ω Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 2500 шт |
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STD13N60M2 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 110W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 2089 шт: термін постачання 14-21 дні (днів) |
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STD13NM60N | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.93A; 90W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.93A Power dissipation: 90W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.36Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2404 шт: термін постачання 14-21 дні (днів) |
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STD15NF10T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 70W; DPAK Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET On-state resistance: 65mΩ Drain current: 16A Drain-source voltage: 100V Features of semiconductor devices: ESD protected gate Case: DPAK Technology: SuperMesh™ Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar Power dissipation: 70W кількість в упаковці: 1 шт |
на замовлення 337 шт: термін постачання 14-21 дні (днів) |
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STD16N65M5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 710V Drain current: 12A Power dissipation: 90W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.279Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2465 шт: термін постачання 14-21 дні (днів) |
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STD16NF06LT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 17A; 40W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 17A Power dissipation: 40W Case: DPAK Gate-source voltage: ±18V On-state resistance: 85mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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STD16NF06T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 40W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 11A Power dissipation: 40W Case: DPAK Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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STD16NF25 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; 85W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 8.5A Power dissipation: 85W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.235Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
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STD17NF03LT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 30W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 12A Power dissipation: 30W Case: DPAK Gate-source voltage: ±16V On-state resistance: 60mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 4751 шт: термін постачання 14-21 дні (днів) |
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STD17NF25 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 10A; 90W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 10A Power dissipation: 90W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.165Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
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STD1802T4 | STMicroelectronics |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 3A; 15W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 100...400 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz кількість в упаковці: 1 шт |
на замовлення 976 шт: термін постачання 14-21 дні (днів) |
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STD18N55M5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 110W; DPAK Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 110W Case: DPAK Gate-source voltage: ±25V On-state resistance: 192mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
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STD18N60M6 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 38A; 110W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 38A Power dissipation: 110W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.23Ω Mounting: SMD Gate charge: 16.8nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2431 шт: термін постачання 14-21 дні (днів) |
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STD18N65M5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; 110W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 9.4A Power dissipation: 110W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.22Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 2148 шт: термін постачання 14-21 дні (днів) |
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STD1HN60K3 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.76A; 27W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Technology: SuperMesh™ Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 600V Drain current: 0.76A On-state resistance: 8Ω Type of transistor: N-MOSFET Power dissipation: 27W Polarisation: unipolar кількість в упаковці: 1 шт |
на замовлення 2 шт: термін постачання 14-21 дні (днів) |
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STD1NK60-1 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.63A; 30W; I2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.63A Power dissipation: 30W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 8.5Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 300 шт: термін постачання 14-21 дні (днів) |
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STD1NK60T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1A; 30W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 1A Power dissipation: 30W Case: DPAK Gate-source voltage: ±30V On-state resistance: 8.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 4102 шт: термін постачання 14-21 дні (днів) |
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STD1NK80ZT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 45W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 1A Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 16Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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STD20NF06LT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 17A; 60W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 17A Power dissipation: 60W Case: DPAK Gate-source voltage: ±18V On-state resistance: 50mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 1487 шт: термін постачання 14-21 дні (днів) |
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STD20NF06T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 60W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 24A Power dissipation: 60W Case: DPAK Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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STD20NF20 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 11A; 110W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Power dissipation: 110W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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STD25NF10LA | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 21A; 100W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 21A Power dissipation: 100W Case: DPAK Gate-source voltage: ±16V On-state resistance: 40mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1900 шт: термін постачання 14-21 дні (днів) |
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STD25NF10LT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 25A; 100W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 25A Power dissipation: 100W Case: DPAK Gate-source voltage: ±16V On-state resistance: 40mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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STD25NF10T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 21A; 100W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 21A Power dissipation: 100W Case: DPAK Gate-source voltage: ±20V On-state resistance: 38mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 1312 шт: термін постачання 14-21 дні (днів) |
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STD25NF20 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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STD26P3LLH6 | STMicroelectronics |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; 40W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -8.5A Power dissipation: 40W Case: DPAK Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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STD2HNK60Z | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2A; 45W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 2A Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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STD2LN60K3 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.26A; 45W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.26A Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 556 шт: термін постачання 14-21 дні (днів) |
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STD2N105K5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1050V; 0.95A; 60W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 1.05kV Drain current: 0.95A Power dissipation: 60W Case: DPAK Gate-source voltage: ±30V On-state resistance: 8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 2748 шт: термін постачання 14-21 дні (днів) |
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STD2N62K3 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 620V; 1A; 45W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 620V Drain current: 1A Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 3.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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STD2N80K5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 45W; DPAK Case: DPAK Mounting: SMD Kind of package: reel; tape On-state resistance: 4.5Ω Drain current: 1.3A Drain-source voltage: 800V Power dissipation: 45W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Technology: SuperMesh™ Kind of channel: enhanced Gate-source voltage: ±30V Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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STD2N95K5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 1.3A; 45W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 950V Drain current: 1.3A Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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STD2NK100Z | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1000V; 1.16A; 70W; DPAK Mounting: SMD Case: DPAK Features of semiconductor devices: ESD protected gate Technology: SuperMesh™ Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 1kV Drain current: 1.16A On-state resistance: 8.5Ω Type of transistor: N-MOSFET Power dissipation: 70W Polarisation: unipolar Kind of package: reel; tape кількість в упаковці: 1 шт |
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STD2NK90ZT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.3A; 70W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.3A Power dissipation: 70W Case: DPAK Gate-source voltage: ±30V On-state resistance: 6.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 104 шт: термін постачання 14-21 дні (днів) |
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STD30NF06LT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 70W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Power dissipation: 70W Case: DPAK Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 2446 шт: термін постачання 14-21 дні (днів) |
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STD35NF06LT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 35A; 80W; DPAK Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 60V Drain current: 35A Power dissipation: 80W Case: DPAK Gate-source voltage: ±16V On-state resistance: 17mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1451 шт: термін постачання 14-21 дні (днів) |
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STD35NF06T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 24.5A; 80W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 24.5A Power dissipation: 80W Case: DPAK Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
товар відсутній |
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STD35P6LLF6 | STMicroelectronics | STD35P6LLF6 SMD P channel transistors |
на замовлення 1904 шт: термін постачання 14-21 дні (днів) |
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STD3N62K3 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 620V; 2.7A; 45W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 620V Drain current: 2.7A Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 2485 шт: термін постачання 14-21 дні (днів) |
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STD3N95K5AG | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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STD3NK100Z | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1000V; 2.5A; 90W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2.5A Power dissipation: 90W Case: DPAK Gate-source voltage: ±30V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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STD3NK50ZT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.45A; 45W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 1.45A Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 3.3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 2500 шт |
товар відсутній |
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STD3NK60Z-1 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.51A; Idm: 9.6A; 45W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.51A Pulsed drain current: 9.6A Power dissipation: 45W Case: IPAK Gate-source voltage: ±30V On-state resistance: 3.6Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
товар відсутній |
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STD3NK60ZT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.51A; Idm: 9.6A; 45W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.51A Pulsed drain current: 9.6A Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 3.6Ω Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 2500 шт |
товар відсутній |
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STD3NK80Z-1 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; I2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.57A Power dissipation: 70W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 4.5Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
товар відсутній |
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STD3NK80ZT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.57A Power dissipation: 70W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 1971 шт: термін постачання 14-21 дні (днів) |
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STD3NK90ZT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 3A; 12W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 3A Power dissipation: 12W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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STD45NF75T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 30A; Idm: 160A; 100W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 30A Pulsed drain current: 160A Power dissipation: 100W Case: DPAK Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
товар відсутній |
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STD46P4LLF6 | STMicroelectronics |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -32.5A; 70W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -32.5A Power dissipation: 70W Case: DPAK Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 4458 шт: термін постачання 14-21 дні (днів) |
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STD4N52K3 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 525V; 2A; 45W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape Power dissipation: 45W Polarisation: unipolar Technology: SuperMesh™ Features of semiconductor devices: ESD protected gate Drain current: 2A Kind of channel: enhanced Drain-source voltage: 525V Type of transistor: N-MOSFET On-state resistance: 2.6Ω Gate-source voltage: ±30V кількість в упаковці: 1 шт |
товар відсутній |
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STD4N62K3 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 620V; 2A; 70W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 620V Drain current: 2A Power dissipation: 70W Case: DPAK Gate-source voltage: ±30V On-state resistance: 2000mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |
STD10N60M2 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.9A; 85W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.9A
Power dissipation: 85W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.9A; 85W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.9A
Power dissipation: 85W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 2418 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 110.12 грн |
5+ | 95.94 грн |
15+ | 73.55 грн |
40+ | 69.07 грн |
500+ | 68.17 грн |
STD10NF10T4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; 50W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; 50W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 2530 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 53.13 грн |
10+ | 44.34 грн |
42+ | 25.12 грн |
50+ | 25.03 грн |
115+ | 23.68 грн |
STD10NM60N |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2347 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 151.66 грн |
10+ | 81.04 грн |
20+ | 52.92 грн |
55+ | 49.34 грн |
STD10NM60ND |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 32A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 32A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 32A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 32A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
STD10P6F6 |
Виробник: STMicroelectronics
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.2A; 35W; DPAK
Case: DPAK
Mounting: SMD
On-state resistance: 0.16Ω
Kind of package: reel; tape
Power dissipation: 35W
Drain-source voltage: -60V
Drain current: -7.2A
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.2A; 35W; DPAK
Case: DPAK
Mounting: SMD
On-state resistance: 0.16Ω
Kind of package: reel; tape
Power dissipation: 35W
Drain-source voltage: -60V
Drain current: -7.2A
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
на замовлення 2077 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 78.25 грн |
10+ | 62.22 грн |
24+ | 44.85 грн |
65+ | 42.16 грн |
500+ | 40.36 грн |
STD11NM60ND |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.3A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.3A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.3A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.3A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
STD12NF06L-1 |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 12A; 30W; IPAK
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 30W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 90mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 12A; 30W; IPAK
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 30W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 90mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 167 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 65.69 грн |
10+ | 40.15 грн |
41+ | 26.01 грн |
112+ | 24.22 грн |
STD12NF06T4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; 30W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.5A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; 30W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.5A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 783 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 36.42 грн |
25+ | 31.48 грн |
44+ | 24.13 грн |
119+ | 22.87 грн |
2500+ | 22.51 грн |
STD13N60DM2 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 44A; 110W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.365Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 44A; 110W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.365Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 2500 шт
товар відсутній
STD13N60M2 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 2089 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 161.32 грн |
10+ | 128.55 грн |
12+ | 92.39 грн |
32+ | 87.01 грн |
500+ | 84.32 грн |
STD13NM60N |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.93A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.93A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.93A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.93A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2404 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 118.82 грн |
5+ | 101.53 грн |
14+ | 75.35 грн |
39+ | 70.86 грн |
STD15NF10T4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 70W; DPAK
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
On-state resistance: 65mΩ
Drain current: 16A
Drain-source voltage: 100V
Features of semiconductor devices: ESD protected gate
Case: DPAK
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Power dissipation: 70W
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 70W; DPAK
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
On-state resistance: 65mΩ
Drain current: 16A
Drain-source voltage: 100V
Features of semiconductor devices: ESD protected gate
Case: DPAK
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Power dissipation: 70W
кількість в упаковці: 1 шт
на замовлення 337 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 70.52 грн |
32+ | 34.37 грн |
88+ | 31.31 грн |
STD16N65M5 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 12A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.279Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 12A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.279Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2465 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 239.57 грн |
5+ | 203.07 грн |
7+ | 170.43 грн |
17+ | 161.46 грн |
STD16NF06LT4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±18V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±18V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
STD16NF06T4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
STD16NF25 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; 85W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Power dissipation: 85W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; 85W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Power dissipation: 85W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
STD17NF03LT4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 30W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 30W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 4751 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 62.79 грн |
50+ | 41.08 грн |
58+ | 18.17 грн |
158+ | 17.19 грн |
STD17NF25 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
STD1802T4 |
Виробник: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 100...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
кількість в упаковці: 1 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 100...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
кількість в упаковці: 1 шт
на замовлення 976 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 59.6 грн |
25+ | 52.16 грн |
28+ | 38.57 грн |
76+ | 35.88 грн |
STD18N55M5 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 192mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 192mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
STD18N60M6 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 38A; 110W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 38A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 16.8nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 38A; 110W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 38A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 16.8nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2431 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 193.2 грн |
5+ | 167.67 грн |
9+ | 122.89 грн |
24+ | 116.61 грн |
STD18N65M5 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 2148 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 256.96 грн |
3+ | 234.74 грн |
6+ | 185.68 грн |
16+ | 174.92 грн |
250+ | 170.43 грн |
500+ | 168.64 грн |
STD1HN60K3 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.76A; 27W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 0.76A
On-state resistance: 8Ω
Type of transistor: N-MOSFET
Power dissipation: 27W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.76A; 27W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 0.76A
On-state resistance: 8Ω
Type of transistor: N-MOSFET
Power dissipation: 27W
Polarisation: unipolar
кількість в упаковці: 1 шт
на замовлення 2 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 144.9 грн |
5+ | 55.89 грн |
25+ | 23.5 грн |
51+ | 20.72 грн |
140+ | 19.55 грн |
STD1NK60-1 |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.63A; 30W; I2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.63A
Power dissipation: 30W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 8.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.63A; 30W; I2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.63A
Power dissipation: 30W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 8.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 300 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 33.81 грн |
10+ | 29.44 грн |
49+ | 21.71 грн |
133+ | 20.54 грн |
STD1NK60T4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1A; 30W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 8.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1A; 30W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 8.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 4102 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 56.03 грн |
45+ | 24.41 грн |
50+ | 23.41 грн |
123+ | 22.16 грн |
STD1NK80ZT4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 16Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 16Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
STD20NF06LT4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; 60W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±18V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; 60W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±18V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 1487 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 117.85 грн |
10+ | 95.01 грн |
17+ | 61.89 грн |
47+ | 58.3 грн |
1000+ | 56.51 грн |
STD20NF06T4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 60W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 60W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
STD20NF20 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; 110W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; 110W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
STD25NF10LA |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1900 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 152.63 грн |
5+ | 127.62 грн |
10+ | 107.64 грн |
25+ | 106.74 грн |
27+ | 101.36 грн |
500+ | 97.77 грн |
STD25NF10LT4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; 100W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; 100W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
STD25NF10T4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; 100W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; 100W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 1312 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 65.69 грн |
6+ | 53.65 грн |
25+ | 45.39 грн |
27+ | 39.74 грн |
73+ | 37.58 грн |
500+ | 36.96 грн |
STD25NF20 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
STD26P3LLH6 |
Виробник: STMicroelectronics
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; 40W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.5A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; 40W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.5A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
STD2HNK60Z |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
STD2LN60K3 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.26A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.26A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.26A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.26A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 556 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 57.96 грн |
38+ | 29.26 грн |
103+ | 26.63 грн |
5000+ | 25.65 грн |
STD2N105K5 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1050V; 0.95A; 60W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 0.95A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1050V; 0.95A; 60W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 0.95A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 2748 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 160.36 грн |
5+ | 145.31 грн |
10+ | 107.64 грн |
25+ | 106.74 грн |
27+ | 101.36 грн |
500+ | 97.77 грн |
STD2N62K3 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 620V; 1A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 620V
Drain current: 1A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 620V; 1A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 620V
Drain current: 1A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
STD2N80K5 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 45W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 4.5Ω
Drain current: 1.3A
Drain-source voltage: 800V
Power dissipation: 45W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 45W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 4.5Ω
Drain current: 1.3A
Drain-source voltage: 800V
Power dissipation: 45W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
STD2N95K5 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 1.3A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 1.3A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 1.3A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 1.3A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
STD2NK100Z |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1.16A; 70W; DPAK
Mounting: SMD
Case: DPAK
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 1kV
Drain current: 1.16A
On-state resistance: 8.5Ω
Type of transistor: N-MOSFET
Power dissipation: 70W
Polarisation: unipolar
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1.16A; 70W; DPAK
Mounting: SMD
Case: DPAK
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 1kV
Drain current: 1.16A
On-state resistance: 8.5Ω
Type of transistor: N-MOSFET
Power dissipation: 70W
Polarisation: unipolar
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
STD2NK90ZT4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.3A; 70W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.3A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 6.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.3A; 70W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.3A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 6.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 104 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 82.11 грн |
10+ | 68.19 грн |
26+ | 40.99 грн |
71+ | 38.75 грн |
STD30NF06LT4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 70W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 70W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 2446 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 120.75 грн |
10+ | 97.81 грн |
14+ | 76.24 грн |
38+ | 71.76 грн |
250+ | 70.86 грн |
STD35NF06LT4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 35A; 80W; DPAK
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 80W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 17mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 35A; 80W; DPAK
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 80W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 17mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1451 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 95.01 грн |
10+ | 87.01 грн |
15+ | 73.55 грн |
40+ | 69.07 грн |
1000+ | 67.28 грн |
2500+ | 66.38 грн |
STD35NF06T4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24.5A; 80W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24.5A
Power dissipation: 80W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24.5A; 80W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24.5A
Power dissipation: 80W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
STD35P6LLF6 |
Виробник: STMicroelectronics
STD35P6LLF6 SMD P channel transistors
STD35P6LLF6 SMD P channel transistors
на замовлення 1904 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 116.89 грн |
14+ | 75.35 грн |
39+ | 70.86 грн |
STD3N62K3 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 620V; 2.7A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 620V
Drain current: 2.7A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 620V; 2.7A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 620V
Drain current: 2.7A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 2485 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 64.72 грн |
10+ | 51.79 грн |
25+ | 44.58 грн |
42+ | 24.94 грн |
116+ | 23.59 грн |
STD3N95K5AG |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
STD3NK100Z |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 2.5A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.5A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 2.5A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.5A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
STD3NK50ZT4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.45A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.45A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.45A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.45A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 2500 шт
товар відсутній
STD3NK60Z-1 |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.51A; Idm: 9.6A; 45W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.51A
Pulsed drain current: 9.6A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.51A; Idm: 9.6A; 45W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.51A
Pulsed drain current: 9.6A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
STD3NK60ZT4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.51A; Idm: 9.6A; 45W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.51A
Pulsed drain current: 9.6A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.51A; Idm: 9.6A; 45W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.51A
Pulsed drain current: 9.6A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 2500 шт
товар відсутній
STD3NK80Z-1 |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; I2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 70W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; I2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 70W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
STD3NK80ZT4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 1971 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 111.09 грн |
5+ | 61.11 грн |
25+ | 50.23 грн |
27+ | 39.74 грн |
73+ | 37.58 грн |
500+ | 36.69 грн |
STD3NK90ZT4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3A; 12W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3A
Power dissipation: 12W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3A; 12W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3A
Power dissipation: 12W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
STD45NF75T4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 30A; Idm: 160A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 30A
Pulsed drain current: 160A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 30A; Idm: 160A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 30A
Pulsed drain current: 160A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
STD46P4LLF6 |
Виробник: STMicroelectronics
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -32.5A; 70W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -32.5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -32.5A; 70W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -32.5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 4458 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 103.4 грн |
10+ | 94.18 грн |
15+ | 70.86 грн |
41+ | 67.28 грн |
500+ | 66.38 грн |
1000+ | 63.69 грн |
STD4N52K3 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 525V; 2A; 45W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Power dissipation: 45W
Polarisation: unipolar
Technology: SuperMesh™
Features of semiconductor devices: ESD protected gate
Drain current: 2A
Kind of channel: enhanced
Drain-source voltage: 525V
Type of transistor: N-MOSFET
On-state resistance: 2.6Ω
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 525V; 2A; 45W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Power dissipation: 45W
Polarisation: unipolar
Technology: SuperMesh™
Features of semiconductor devices: ESD protected gate
Drain current: 2A
Kind of channel: enhanced
Drain-source voltage: 525V
Type of transistor: N-MOSFET
On-state resistance: 2.6Ω
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
товар відсутній
STD4N62K3 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 620V; 2A; 70W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 620V
Drain current: 2A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2000mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 620V; 2A; 70W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 620V
Drain current: 2A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2000mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній