Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (99813) > Сторінка 841 з 1664
Фото | Назва | Виробник | Інформація |
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ML62Q1365-NNNTBZ0BX | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 32-TQFP Mounting Type: Surface Mount Speed: 25MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: nX-U16/100 Data Converters: A/D 8x10b; D/A 1x8b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V Connectivity: I2C, SSP, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 32-TQFP (7x7) Part Status: Active Number of I/O: 28 DigiKey Programmable: Not Verified |
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ML62Q1367-NNNTBZ0BX | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 32-TQFP Mounting Type: Surface Mount Speed: 25MHz Program Memory Size: 64KB (64K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: nX-U16/100 Data Converters: A/D 8x10b; D/A 1x8b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V Connectivity: I2C, SSP, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 32-TQFP (7x7) Part Status: Active Number of I/O: 28 DigiKey Programmable: Not Verified |
на замовлення 2055 шт: термін постачання 21-31 дні (днів) |
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ML62Q1530-NNNTBZ0BX | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 48-TQFP Mounting Type: Surface Mount Speed: 25MHz Program Memory Size: 32KB (32K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: nX-U16/100 Data Converters: A/D 12x10b; D/A 1x8b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V Connectivity: I2C, SSP, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 48-TQFP (7x7) Part Status: Active Number of I/O: 42 DigiKey Programmable: Not Verified |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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ML62Q1532-NNNTBZ0BX | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 48-TQFP Mounting Type: Surface Mount Speed: 25MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: nX-U16/100 Data Converters: A/D 12x10b; D/A 1x8b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V Connectivity: I2C, SSP, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 48-TQFP (7x7) Part Status: Active Number of I/O: 42 DigiKey Programmable: Not Verified |
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ML62Q1534-NNNTBZ0BX | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 48-TQFP Mounting Type: Surface Mount Speed: 25MHz Program Memory Size: 128KB (128K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: nX-U16/100 Data Converters: A/D 12x10b; D/A 1x8b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V Connectivity: I2C, SSP, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 48-TQFP (7x7) Part Status: Active Number of I/O: 42 DigiKey Programmable: Not Verified |
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ML62Q1540-NNNTBZ0BX | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 52-TQFP Mounting Type: Surface Mount Speed: 25MHz Program Memory Size: 32KB (32K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: nX-U16/100 Data Converters: A/D 12x10b; D/A 1x8b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V Connectivity: I2C, SSP, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 52-TQFP (10x10) Part Status: Active Number of I/O: 46 DigiKey Programmable: Not Verified |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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ML62Q1542-NNNTBZ0BX | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 52-TQFP Mounting Type: Surface Mount Speed: 25MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: nX-U16/100 Data Converters: A/D 12x10b; D/A 1x8b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V Connectivity: I2C, SSP, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 52-TQFP (10x10) Part Status: Active Number of I/O: 46 DigiKey Programmable: Not Verified |
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ML62Q1544-NNNTBZ0BX | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 52-TQFP Mounting Type: Surface Mount Speed: 25MHz Program Memory Size: 128KB (128K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: nX-U16/100 Data Converters: A/D 12x10b; D/A 1x8b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V Connectivity: I2C, SSP, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 52-TQFP (10x10) Part Status: Active Number of I/O: 46 DigiKey Programmable: Not Verified |
на замовлення 996 шт: термін постачання 21-31 дні (днів) |
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ML62Q1550-NNNTBZ0BX | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 64-TQFP Mounting Type: Surface Mount Speed: 25MHz Program Memory Size: 32KB (32K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: nX-U16/100 Data Converters: A/D 12x10b; D/A 1x8b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V Connectivity: I2C, SSP, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 64-TQFP (10x10) Part Status: Active Number of I/O: 58 DigiKey Programmable: Not Verified |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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ML62Q1552-NNNTBZ0BX | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 64-TQFP Mounting Type: Surface Mount Speed: 25MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: nX-U16/100 Data Converters: A/D 12x10b; D/A 1x8b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V Connectivity: I2C, SSP, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 64-TQFP (10x10) Part Status: Active Number of I/O: 58 DigiKey Programmable: Not Verified |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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ML62Q1554-NNNTBZ0BX | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 64-TQFP Mounting Type: Surface Mount Speed: 25MHz Program Memory Size: 128KB (128K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: nX-U16/100 Data Converters: A/D 12x10b; D/A 1x8b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V Connectivity: I2C, SSP, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 64-TQFP (10x10) Part Status: Active Number of I/O: 58 DigiKey Programmable: Not Verified |
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BM63563S-VA | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: 25-PowerDIP Module (1.134", 28.80mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 1500Vrms Part Status: Active Current: 10 A Voltage: 600 V |
на замовлення 49 шт: термін постачання 21-31 дні (днів) |
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BM63563S-VC | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: 25-PowerDIP Module (1.327", 33.70mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 1500Vrms Part Status: Active Current: 10 A Voltage: 600 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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BM63564S-VA | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: 25-PowerDIP Module (1.134", 28.80mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 1500Vrms Part Status: Active Current: 15 A Voltage: 600 V |
на замовлення 39 шт: термін постачання 21-31 дні (днів) |
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BM63564S-VC | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: 25-PowerDIP Module (1.327", 33.70mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 1500Vrms Part Status: Active Current: 15 A Voltage: 600 V |
на замовлення 58 шт: термін постачання 21-31 дні (днів) |
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BM63963S-VA | Rohm Semiconductor |
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BM63963S-VC | Rohm Semiconductor |
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BD71847AMWV-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.75V ~ 5.5V Frequency - Switching: 2MHz Topology: Step-Down (Buck) (6), Linear (LDO) (6) Supplier Device Package: UQFN56BV7070 Voltage/Current - Output 1: 0.7V ~ 1.3V, 3A Voltage/Current - Output 2: 0.7V ~ 1.3V, 3A Voltage/Current - Output 3: 0.7V ~ 1.35V, 3A w/LED Driver: No w/Supervisor: No w/Sequencer: Yes Part Status: Active Number of Outputs: 12 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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BD71847AMWV-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.75V ~ 5.5V Frequency - Switching: 2MHz Topology: Step-Down (Buck) (6), Linear (LDO) (6) Supplier Device Package: UQFN56BV7070 Voltage/Current - Output 1: 0.7V ~ 1.3V, 3A Voltage/Current - Output 2: 0.7V ~ 1.3V, 3A Voltage/Current - Output 3: 0.7V ~ 1.35V, 3A w/LED Driver: No w/Supervisor: No w/Sequencer: Yes Part Status: Active Number of Outputs: 12 |
на замовлення 33065 шт: термін постачання 21-31 дні (днів) |
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R6025JNZC8 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 25A TO3PF Packaging: Bag Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 7V @ 4.5mA Supplier Device Package: TO-3PF Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V |
на замовлення 13 шт: термін постачання 21-31 дні (днів) |
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R6030JNZC8 | Rohm Semiconductor |
![]() Packaging: Bulk Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V Power Dissipation (Max): 93W (Tc) Vgs(th) (Max) @ Id: 7V @ 5.5mA Supplier Device Package: TO-3PF Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V |
на замовлення 29 шт: термін постачання 21-31 дні (днів) |
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R6004JNJGTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 7V @ 450µA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V |
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R6006JNJGTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 7V @ 800µA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V |
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R6007JNJGTL | Rohm Semiconductor |
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на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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R6009JNJGTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 7V @ 1.38mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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R6007JND3TL1 | Rohm Semiconductor |
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на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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R6009JND3TL1 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 7V @ 1.38mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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R6007JNXC7G | Rohm Semiconductor |
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на замовлення 2036 шт: термін постачання 21-31 дні (днів) |
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R6009JNXC7G | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V Power Dissipation (Max): 53W (Tc) Vgs(th) (Max) @ Id: 7V @ 1.38mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V |
на замовлення 1899 шт: термін постачання 21-31 дні (днів) |
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R6025JNXC7G | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 7V @ 4.5mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V |
на замовлення 1961 шт: термін постачання 21-31 дні (днів) |
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R6025JNZ4C13 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 7V @ 4.5mA Supplier Device Package: TO-247G Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V |
на замовлення 597 шт: термін постачання 21-31 дні (днів) |
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R6030JNZ4C13 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 7V @ 5.5mA Supplier Device Package: TO-247G Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V |
на замовлення 550 шт: термін постачання 21-31 дні (днів) |
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R6004JNJGTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 7V @ 450µA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V |
на замовлення 993 шт: термін постачання 21-31 дні (днів) |
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R6006JNJGTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 7V @ 800µA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V |
на замовлення 1098 шт: термін постачання 21-31 дні (днів) |
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R6007JNJGTL | Rohm Semiconductor |
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на замовлення 1080 шт: термін постачання 21-31 дні (днів) |
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R6009JNJGTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 7V @ 1.38mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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R6009JND3TL1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 7V @ 1.38mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BD16950EFV-CE2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 3V ~ 5.5V Input Type: Non-Inverting Supplier Device Package: 24-HTSSOP-B Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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BD7F100EFJ-EVK-001 | Rohm Semiconductor |
![]() Packaging: Box Voltage - Output: 5V Voltage - Input: 24V Current - Output: 1A Frequency - Switching: 400kHz Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: BD7F100 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Isolated |
товар відсутній |
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BD7F200EFJ-EVK-001 | Rohm Semiconductor |
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на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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BD7F200EFJ-EVK-002 | Rohm Semiconductor |
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на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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BD7F200HFN-EVK-001 | Rohm Semiconductor |
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на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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BD7F200HFN-EVK-002 | Rohm Semiconductor |
![]() Packaging: Box Voltage - Output: 5V Voltage - Input: 24V Current - Output: 2A Frequency - Switching: 400kHz Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: BD7F200 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Isolated |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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BA12004DF-ZE2 | Rohm Semiconductor |
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на замовлення 2418 шт: термін постачання 21-31 дні (днів) |
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BA12003DF-ZE2 | Rohm Semiconductor |
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на замовлення 2231 шт: термін постачання 21-31 дні (днів) |
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LM339F-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.173", 4.40mm Width) Output Type: Open-Collector Mounting Type: Surface Mount Number of Elements: 4 Type: General Purpose Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V Supplier Device Package: 14-SOP Current - Quiescent (Max): 2mA Voltage - Input Offset (Max): 4.5mV @ 32V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 16mA @ 5V Part Status: Active |
на замовлення 5882 шт: термін постачання 21-31 дні (днів) |
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BD16950EFV-CE2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 3V ~ 5.5V Input Type: Non-Inverting Supplier Device Package: 24-HTSSOP-B Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Grade: Automotive DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 4906 шт: термін постачання 21-31 дні (днів) |
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BM2SCQ121T-LBZ | Rohm Semiconductor |
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на замовлення 151 шт: термін постачання 21-31 дні (днів) |
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BM2SCQ122T-LBZ | Rohm Semiconductor |
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на замовлення 225 шт: термін постачання 21-31 дні (днів) |
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BM2SCQ123T-LBZ | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-6 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 105°C Frequency - Switching: 30kHz, 120kHz Internal Switch(s): Yes Voltage - Breakdown: 1700V Output Isolation: Isolated Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V Supplier Device Package: TO-220-6M Fault Protection: Over Current, Over Voltage Control Features: Soft Start Power (Watts): 1.5 W |
на замовлення 2254 шт: термін постачання 21-31 дні (днів) |
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BM2SCQ124T-LBZ | Rohm Semiconductor |
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на замовлення 228 шт: термін постачання 21-31 дні (днів) |
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BSS64AT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V Frequency - Transition: 140MHz Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 200 mW |
товар відсутній |
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BSS63AT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V Frequency - Transition: 200MHz Supplier Device Package: SST3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 200 mW |
товар відсутній |
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BSS5130AT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Frequency - Transition: 320MHz Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW |
товар відсутній |
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BSS4130AT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Frequency - Transition: 400MHz Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW |
товар відсутній |
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BD71837AMWV-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 5.5V Applications: General Purpose Current - Supply: 197µA Supplier Device Package: UQFN68CV8080 Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BD71837AMWV-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 5.5V Applications: General Purpose Current - Supply: 197µA Supplier Device Package: UQFN68CV8080 Part Status: Active |
на замовлення 4201 шт: термін постачання 21-31 дні (днів) |
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BSS4130AT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Frequency - Transition: 400MHz Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW |
на замовлення 418 шт: термін постачання 21-31 дні (днів) |
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BSS5130AT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Frequency - Transition: 320MHz Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW |
на замовлення 196 шт: термін постачання 21-31 дні (днів) |
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BSS63AT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V Frequency - Transition: 200MHz Supplier Device Package: SST3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 200 mW |
на замовлення 2307 шт: термін постачання 21-31 дні (днів) |
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ML62Q1365-NNNTBZ0BX |
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Виробник: Rohm Semiconductor
Description: IC MCU 16BIT 32KB FLASH 32TQFP
Packaging: Cut Tape (CT)
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U16/100
Data Converters: A/D 8x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-TQFP (7x7)
Part Status: Active
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 32KB FLASH 32TQFP
Packaging: Cut Tape (CT)
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U16/100
Data Converters: A/D 8x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-TQFP (7x7)
Part Status: Active
Number of I/O: 28
DigiKey Programmable: Not Verified
товар відсутній
ML62Q1367-NNNTBZ0BX |
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Виробник: Rohm Semiconductor
Description: IC MCU 16BIT 64KB FLASH 32TQFP
Packaging: Cut Tape (CT)
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U16/100
Data Converters: A/D 8x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-TQFP (7x7)
Part Status: Active
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB FLASH 32TQFP
Packaging: Cut Tape (CT)
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U16/100
Data Converters: A/D 8x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-TQFP (7x7)
Part Status: Active
Number of I/O: 28
DigiKey Programmable: Not Verified
на замовлення 2055 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 335.29 грн |
10+ | 289.49 грн |
25+ | 273.68 грн |
100+ | 222.6 грн |
250+ | 211.18 грн |
500+ | 189.49 грн |
ML62Q1530-NNNTBZ0BX |
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Виробник: Rohm Semiconductor
Description: IC MCU 16BIT 32KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 42
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 32KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 42
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 409.04 грн |
10+ | 353.62 грн |
25+ | 334.3 грн |
100+ | 271.9 грн |
250+ | 257.95 грн |
500+ | 231.46 грн |
ML62Q1532-NNNTBZ0BX |
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Виробник: Rohm Semiconductor
Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 42
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 42
DigiKey Programmable: Not Verified
товар відсутній
ML62Q1534-NNNTBZ0BX |
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Виробник: Rohm Semiconductor
Description: IC MCU 16BIT 128KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 42
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 128KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 42
DigiKey Programmable: Not Verified
товар відсутній
ML62Q1540-NNNTBZ0BX |
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Виробник: Rohm Semiconductor
Description: IC MCU 16BIT 32KB FLASH 52TQFP
Packaging: Cut Tape (CT)
Package / Case: 52-TQFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 52-TQFP (10x10)
Part Status: Active
Number of I/O: 46
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 32KB FLASH 52TQFP
Packaging: Cut Tape (CT)
Package / Case: 52-TQFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 52-TQFP (10x10)
Part Status: Active
Number of I/O: 46
DigiKey Programmable: Not Verified
на замовлення 100 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 519.29 грн |
10+ | 341.03 грн |
25+ | 299.94 грн |
100+ | 238.34 грн |
ML62Q1542-NNNTBZ0BX |
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Виробник: Rohm Semiconductor
Description: IC MCU 16BIT 64KB FLASH 52TQFP
Packaging: Cut Tape (CT)
Package / Case: 52-TQFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 52-TQFP (10x10)
Part Status: Active
Number of I/O: 46
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB FLASH 52TQFP
Packaging: Cut Tape (CT)
Package / Case: 52-TQFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 52-TQFP (10x10)
Part Status: Active
Number of I/O: 46
DigiKey Programmable: Not Verified
товар відсутній
ML62Q1544-NNNTBZ0BX |
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Виробник: Rohm Semiconductor
Description: IC MCU 16BIT 128KB FLASH 52TQFP
Packaging: Cut Tape (CT)
Package / Case: 52-TQFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 52-TQFP (10x10)
Part Status: Active
Number of I/O: 46
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 128KB FLASH 52TQFP
Packaging: Cut Tape (CT)
Package / Case: 52-TQFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 52-TQFP (10x10)
Part Status: Active
Number of I/O: 46
DigiKey Programmable: Not Verified
на замовлення 996 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 469.87 грн |
10+ | 408.98 грн |
25+ | 389.94 грн |
100+ | 317.74 грн |
250+ | 303.46 грн |
500+ | 276.69 грн |
ML62Q1550-NNNTBZ0BX |
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Виробник: Rohm Semiconductor
Description: IC MCU 16BIT 32KB FLASH 64TQFP
Packaging: Cut Tape (CT)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Part Status: Active
Number of I/O: 58
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 32KB FLASH 64TQFP
Packaging: Cut Tape (CT)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Part Status: Active
Number of I/O: 58
DigiKey Programmable: Not Verified
на замовлення 100 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 541.34 грн |
10+ | 356.55 грн |
25+ | 313.94 грн |
100+ | 249.89 грн |
ML62Q1552-NNNTBZ0BX |
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Виробник: Rohm Semiconductor
Description: IC MCU 16BIT 64KB FLASH 64TQFP
Packaging: Cut Tape (CT)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Part Status: Active
Number of I/O: 58
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB FLASH 64TQFP
Packaging: Cut Tape (CT)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Part Status: Active
Number of I/O: 58
DigiKey Programmable: Not Verified
на замовлення 100 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 569.47 грн |
10+ | 376.03 грн |
25+ | 331.6 грн |
100+ | 264.5 грн |
ML62Q1554-NNNTBZ0BX |
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Виробник: Rohm Semiconductor
Description: IC MCU 16BIT 128KB FLASH 64TQFP
Packaging: Cut Tape (CT)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Part Status: Active
Number of I/O: 58
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 128KB FLASH 64TQFP
Packaging: Cut Tape (CT)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Part Status: Active
Number of I/O: 58
DigiKey Programmable: Not Verified
товар відсутній
BM63563S-VA |
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Виробник: Rohm Semiconductor
Description: INTELLIGENT POWER MODULE
Packaging: Tube
Package / Case: 25-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 10 A
Voltage: 600 V
Description: INTELLIGENT POWER MODULE
Packaging: Tube
Package / Case: 25-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 10 A
Voltage: 600 V
на замовлення 49 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1738.05 грн |
10+ | 1543.28 грн |
BM63563S-VC |
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Виробник: Rohm Semiconductor
Description: INTELLIGENT POWER MODULE
Packaging: Tube
Package / Case: 25-PowerDIP Module (1.327", 33.70mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 10 A
Voltage: 600 V
Description: INTELLIGENT POWER MODULE
Packaging: Tube
Package / Case: 25-PowerDIP Module (1.327", 33.70mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 10 A
Voltage: 600 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1738.05 грн |
10+ | 1543.28 грн |
BM63564S-VA |
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Виробник: Rohm Semiconductor
Description: INTELLIGENT POWER MODULE
Packaging: Tube
Package / Case: 25-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
Description: INTELLIGENT POWER MODULE
Packaging: Tube
Package / Case: 25-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
на замовлення 39 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1909.88 грн |
10+ | 1696.52 грн |
BM63564S-VC |
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Виробник: Rohm Semiconductor
Description: INTELLIGENT POWER MODULE
Packaging: Tube
Package / Case: 25-PowerDIP Module (1.327", 33.70mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
Description: INTELLIGENT POWER MODULE
Packaging: Tube
Package / Case: 25-PowerDIP Module (1.327", 33.70mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
на замовлення 58 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1909.88 грн |
10+ | 1696.52 грн |
BD71847AMWV-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.75V ~ 5.5V
Frequency - Switching: 2MHz
Topology: Step-Down (Buck) (6), Linear (LDO) (6)
Supplier Device Package: UQFN56BV7070
Voltage/Current - Output 1: 0.7V ~ 1.3V, 3A
Voltage/Current - Output 2: 0.7V ~ 1.3V, 3A
Voltage/Current - Output 3: 0.7V ~ 1.35V, 3A
w/LED Driver: No
w/Supervisor: No
w/Sequencer: Yes
Part Status: Active
Number of Outputs: 12
Description: IC REG
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.75V ~ 5.5V
Frequency - Switching: 2MHz
Topology: Step-Down (Buck) (6), Linear (LDO) (6)
Supplier Device Package: UQFN56BV7070
Voltage/Current - Output 1: 0.7V ~ 1.3V, 3A
Voltage/Current - Output 2: 0.7V ~ 1.3V, 3A
Voltage/Current - Output 3: 0.7V ~ 1.35V, 3A
w/LED Driver: No
w/Supervisor: No
w/Sequencer: Yes
Part Status: Active
Number of Outputs: 12
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 162.99 грн |
3000+ | 147.79 грн |
BD71847AMWV-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG
Packaging: Cut Tape (CT)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.75V ~ 5.5V
Frequency - Switching: 2MHz
Topology: Step-Down (Buck) (6), Linear (LDO) (6)
Supplier Device Package: UQFN56BV7070
Voltage/Current - Output 1: 0.7V ~ 1.3V, 3A
Voltage/Current - Output 2: 0.7V ~ 1.3V, 3A
Voltage/Current - Output 3: 0.7V ~ 1.35V, 3A
w/LED Driver: No
w/Supervisor: No
w/Sequencer: Yes
Part Status: Active
Number of Outputs: 12
Description: IC REG
Packaging: Cut Tape (CT)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.75V ~ 5.5V
Frequency - Switching: 2MHz
Topology: Step-Down (Buck) (6), Linear (LDO) (6)
Supplier Device Package: UQFN56BV7070
Voltage/Current - Output 1: 0.7V ~ 1.3V, 3A
Voltage/Current - Output 2: 0.7V ~ 1.3V, 3A
Voltage/Current - Output 3: 0.7V ~ 1.35V, 3A
w/LED Driver: No
w/Supervisor: No
w/Sequencer: Yes
Part Status: Active
Number of Outputs: 12
на замовлення 33065 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 315.53 грн |
10+ | 254.86 грн |
100+ | 206.22 грн |
500+ | 172.02 грн |
R6025JNZC8 |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 25A TO3PF
Packaging: Bag
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 7V @ 4.5mA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V
Description: MOSFET N-CH 600V 25A TO3PF
Packaging: Bag
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 7V @ 4.5mA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V
на замовлення 13 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 558.06 грн |
10+ | 460.81 грн |
R6030JNZC8 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO3PF
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Description: MOSFET N-CH 600V 30A TO3PF
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 661.46 грн |
10+ | 545.67 грн |
R6004JNJGTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 4A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 7V @ 450µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V
Description: MOSFET N-CH 600V 4A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 7V @ 450µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V
товар відсутній
R6006JNJGTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 6A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 7V @ 800µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
Description: MOSFET N-CH 600V 6A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 7V @ 800µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
товар відсутній
R6007JNJGTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 7A LPTS
Description: MOSFET N-CH 600V 7A LPTS
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 101.6 грн |
R6009JNJGTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
Description: MOSFET N-CH 600V 9A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 100.67 грн |
R6007JND3TL1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 7A TO252
Description: MOSFET N-CH 600V 7A TO252
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)R6009JND3TL1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
Description: MOSFET N-CH 600V 9A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 89.99 грн |
R6007JNXC7G |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 7A TO220FM
Description: MOSFET N-CH 600V 7A TO220FM
на замовлення 2036 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 214.41 грн |
10+ | 185.09 грн |
100+ | 151.67 грн |
500+ | 121.17 грн |
1000+ | 102.19 грн |
2000+ | 97.08 грн |
R6009JNXC7G |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A TO220FM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
Description: MOSFET N-CH 600V 9A TO220FM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
на замовлення 1899 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 76.79 грн |
50+ | 59.41 грн |
100+ | 48.88 грн |
500+ | 41.41 грн |
R6025JNXC7G |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 25A TO220FM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 7V @ 4.5mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V
Description: MOSFET N-CH 600V 25A TO220FM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 7V @ 4.5mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V
на замовлення 1961 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 329.21 грн |
50+ | 251.45 грн |
100+ | 215.52 грн |
500+ | 197.83 грн |
R6025JNZ4C13 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 25A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 7V @ 4.5mA
Supplier Device Package: TO-247G
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V
Description: MOSFET N-CH 600V 25A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 7V @ 4.5mA
Supplier Device Package: TO-247G
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V
на замовлення 597 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 451.62 грн |
30+ | 347.04 грн |
120+ | 321.56 грн |
R6030JNZ4C13 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-247G
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Description: MOSFET N-CH 600V 30A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-247G
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
на замовлення 550 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 367.99 грн |
10+ | 297.62 грн |
100+ | 240.76 грн |
500+ | 200.84 грн |
R6004JNJGTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 4A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 7V @ 450µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V
Description: MOSFET N-CH 600V 4A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 7V @ 450µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V
на замовлення 993 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 105.68 грн |
10+ | 84.64 грн |
100+ | 67.37 грн |
500+ | 57.09 грн |
R6006JNJGTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 6A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 7V @ 800µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
Description: MOSFET N-CH 600V 6A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 7V @ 800µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
на замовлення 1098 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 180.95 грн |
10+ | 144.6 грн |
100+ | 115.1 грн |
500+ | 91.4 грн |
R6007JNJGTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 7A LPTS
Description: MOSFET N-CH 600V 7A LPTS
на замовлення 1080 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 206.8 грн |
10+ | 178.79 грн |
100+ | 143.72 грн |
500+ | 110.81 грн |
R6009JNJGTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
Description: MOSFET N-CH 600V 9A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 194.64 грн |
10+ | 157.48 грн |
100+ | 127.37 грн |
500+ | 106.26 грн |
R6009JND3TL1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
Description: MOSFET N-CH 600V 9A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 196.92 грн |
10+ | 170.08 грн |
100+ | 136.73 грн |
500+ | 105.42 грн |
1000+ | 87.35 грн |
BD16950EFV-CE2 |
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Виробник: Rohm Semiconductor
Description: IC GATE DRVR HALF-BRIDG 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 5.5V
Input Type: Non-Inverting
Supplier Device Package: 24-HTSSOP-B
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC GATE DRVR HALF-BRIDG 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 5.5V
Input Type: Non-Inverting
Supplier Device Package: 24-HTSSOP-B
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2000+ | 223.92 грн |
BD7F100EFJ-EVK-001 |
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Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BD7F100
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 24V
Current - Output: 1A
Frequency - Switching: 400kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: BD7F100
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Isolated
Description: EVAL BOARD FOR BD7F100
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 24V
Current - Output: 1A
Frequency - Switching: 400kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: BD7F100
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Isolated
товар відсутній
BD7F200EFJ-EVK-001 |
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Виробник: Rohm Semiconductor
Description: BD7F200EFJ-EVK-001 EVALUATION BO
Description: BD7F200EFJ-EVK-001 EVALUATION BO
на замовлення 1 шт:
термін постачання 21-31 дні (днів)BD7F200EFJ-EVK-002 |
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Виробник: Rohm Semiconductor
Description: BD7F200EFJ-EVK-002 EVALUATION BO
Description: BD7F200EFJ-EVK-002 EVALUATION BO
на замовлення 1 шт:
термін постачання 21-31 дні (днів)BD7F200HFN-EVK-001 |
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Виробник: Rohm Semiconductor
Description: BD7F200HFN-EVK-001 EVALUATION BO
Description: BD7F200HFN-EVK-001 EVALUATION BO
на замовлення 1 шт:
термін постачання 21-31 дні (днів)BD7F200HFN-EVK-002 |
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Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BD7F200
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 24V
Current - Output: 2A
Frequency - Switching: 400kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: BD7F200
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Isolated
Description: EVAL BOARD FOR BD7F200
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 24V
Current - Output: 2A
Frequency - Switching: 400kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: BD7F200
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Isolated
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 8040.2 грн |
BA12004DF-ZE2 |
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Виробник: Rohm Semiconductor
Description: IC DARLINGTON ARRAY 7/0 16SOP
Description: IC DARLINGTON ARRAY 7/0 16SOP
на замовлення 2418 шт:
термін постачання 21-31 дні (днів)BA12003DF-ZE2 |
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Виробник: Rohm Semiconductor
Description: IC DARLINGTON ARRAY 7/0 16SOP
Description: IC DARLINGTON ARRAY 7/0 16SOP
на замовлення 2231 шт:
термін постачання 21-31 дні (днів)LM339F-E2 |
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Виробник: Rohm Semiconductor
Description: IC COMPARATOR 4 GEN PUR 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 4.5mV @ 32V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Description: IC COMPARATOR 4 GEN PUR 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 4.5mV @ 32V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
на замовлення 5882 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 47.9 грн |
10+ | 41.22 грн |
25+ | 39.1 грн |
100+ | 30.14 грн |
250+ | 28.18 грн |
500+ | 24.9 грн |
1000+ | 22.69 грн |
BD16950EFV-CE2 |
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Виробник: Rohm Semiconductor
Description: IC GATE DRVR HALF-BRIDG 24HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 5.5V
Input Type: Non-Inverting
Supplier Device Package: 24-HTSSOP-B
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC GATE DRVR HALF-BRIDG 24HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 5.5V
Input Type: Non-Inverting
Supplier Device Package: 24-HTSSOP-B
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 4906 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 302.6 грн |
10+ | 263.28 грн |
25+ | 251.07 грн |
100+ | 204.59 грн |
250+ | 202.36 грн |
BM2SCQ121T-LBZ |
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Виробник: Rohm Semiconductor
Description: IC OFFLINE SWITCH TO220-6M
Description: IC OFFLINE SWITCH TO220-6M
на замовлення 151 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1044.66 грн |
10+ | 924.7 грн |
25+ | 886.39 грн |
100+ | 732.92 грн |
BM2SCQ122T-LBZ |
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Виробник: Rohm Semiconductor
Description: IC OFFLINE SWITCH TO220-6M
Description: IC OFFLINE SWITCH TO220-6M
на замовлення 225 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1044.66 грн |
10+ | 924.7 грн |
25+ | 886.39 грн |
100+ | 732.92 грн |
BM2SCQ123T-LBZ |
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Виробник: Rohm Semiconductor
Description: IC OFFLINE SWITCH TO220-6M
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 30kHz, 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-220-6M
Fault Protection: Over Current, Over Voltage
Control Features: Soft Start
Power (Watts): 1.5 W
Description: IC OFFLINE SWITCH TO220-6M
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 30kHz, 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-220-6M
Fault Protection: Over Current, Over Voltage
Control Features: Soft Start
Power (Watts): 1.5 W
на замовлення 2254 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 941.25 грн |
10+ | 832.81 грн |
25+ | 798.36 грн |
100+ | 660.12 грн |
250+ | 627.72 грн |
500+ | 587.22 грн |
1000+ | 529.79 грн |
BM2SCQ124T-LBZ |
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Виробник: Rohm Semiconductor
Description: IC OFFLINE SWITCH TO220-6M
Description: IC OFFLINE SWITCH TO220-6M
на замовлення 228 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1044.66 грн |
10+ | 924.7 грн |
25+ | 886.39 грн |
100+ | 732.92 грн |
BSS64AT116 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 100V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
Description: TRANS NPN 100V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
товар відсутній
BSS63AT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 100V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
Description: TRANS PNP 100V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
товар відсутній
BSS5130AT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 30V 1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Description: TRANS PNP 30V 1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
товар відсутній
BSS4130AT116 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 30V 1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Description: TRANS NPN 30V 1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
товар відсутній
BD71837AMWV-E2 |
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Виробник: Rohm Semiconductor
Description: SYSTEM PMIC FOR I.MX 8M FAMILY.
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Current - Supply: 197µA
Supplier Device Package: UQFN68CV8080
Part Status: Active
Description: SYSTEM PMIC FOR I.MX 8M FAMILY.
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Current - Supply: 197µA
Supplier Device Package: UQFN68CV8080
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 260.94 грн |
2000+ | 241.97 грн |
BD71837AMWV-E2 |
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Виробник: Rohm Semiconductor
Description: SYSTEM PMIC FOR I.MX 8M FAMILY.
Packaging: Cut Tape (CT)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Current - Supply: 197µA
Supplier Device Package: UQFN68CV8080
Part Status: Active
Description: SYSTEM PMIC FOR I.MX 8M FAMILY.
Packaging: Cut Tape (CT)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Current - Supply: 197µA
Supplier Device Package: UQFN68CV8080
Part Status: Active
на замовлення 4201 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 459.98 грн |
10+ | 400.19 грн |
25+ | 381.56 грн |
100+ | 310.93 грн |
250+ | 296.95 грн |
500+ | 270.75 грн |
BSS4130AT116 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 30V 1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Description: TRANS NPN 30V 1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
на замовлення 418 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.41 грн |
13+ | 22.7 грн |
100+ | 13.64 грн |
BSS5130AT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 30V 1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Description: TRANS PNP 30V 1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
на замовлення 196 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.41 грн |
13+ | 22.7 грн |
100+ | 13.64 грн |
BSS63AT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 100V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
Description: TRANS PNP 100V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
на замовлення 2307 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 24.33 грн |
18+ | 16.4 грн |
100+ | 8.3 грн |
500+ | 6.36 грн |
1000+ | 4.72 грн |