Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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FSAV433MTCX-ON | onsemi |
Description: IC SWITCH SP3T X 3 9OHM 20TSSOP Packaging: Bulk Package / Case: 20-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 9Ohm -3db Bandwidth: 550MHz Supplier Device Package: 20-TSSOP Voltage - Supply, Single (V+): 2.3V ~ 3.6V Crosstalk: -70dB @ 30MHz Switch Circuit: SP3T Multiplexer/Demultiplexer Circuit: 3:1 Switch Time (Ton, Toff) (Max): 5.5ns, 4ns Channel Capacitance (CS(off), CD(off)): 3pF, 4pF Current - Leakage (IS(off)) (Max): 1µA Part Status: Active Number of Circuits: 3 |
на замовлення 52000 шт: термін постачання 21-31 дні (днів) |
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TIG064E8-TL-H-ON | onsemi |
Description: N-CHANNEL IGBT FOR LIGHT-CONTROL Packaging: Bulk Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 7V @ 2.5V, 100A Supplier Device Package: 8-ECH Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector Pulsed (Icm): 150 A |
на замовлення 1169624 шт: термін постачання 21-31 дні (днів) |
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NTMTSC002N10MCTXG | onsemi |
Description: MOSFET N-CH 100V 45A/236A 8TDFNW Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V Power Dissipation (Max): 9W (Ta), 255W (Tc) Vgs(th) (Max) @ Id: 4V @ 520µA Supplier Device Package: 8-TDFNW (8.3x8.4) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V |
товар відсутній |
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NTMTSC002N10MCTXG | onsemi |
Description: MOSFET N-CH 100V 45A/236A 8TDFNW Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V Power Dissipation (Max): 9W (Ta), 255W (Tc) Vgs(th) (Max) @ Id: 4V @ 520µA Supplier Device Package: 8-TDFNW (8.3x8.4) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V |
на замовлення 244 шт: термін постачання 21-31 дні (днів) |
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NTMTS6D0N15MC | onsemi | Description: SINGLE N-CHANNEL POWER MOSFET 15 |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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NTMTS6D0N15MC | onsemi | Description: SINGLE N-CHANNEL POWER MOSFET 15 |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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NTMTSC1D6N10MCTXG | onsemi |
Description: MOSFET N-CH 100V 35A/267A 8TDFNW Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V Power Dissipation (Max): 5.1W (Ta), 291W (Tc) Vgs(th) (Max) @ Id: 4V @ 650µA Supplier Device Package: 8-TDFNW (8.3x8.4) Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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NTMTSC1D6N10MCTXG | onsemi |
Description: MOSFET N-CH 100V 35A/267A 8TDFNW Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V Power Dissipation (Max): 5.1W (Ta), 291W (Tc) Vgs(th) (Max) @ Id: 4V @ 650µA Supplier Device Package: 8-TDFNW (8.3x8.4) Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V |
на замовлення 13952 шт: термін постачання 21-31 дні (днів) |
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NTMTS4D3N15MC | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 15 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc) Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V Power Dissipation (Max): 5W (Ta), 293W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 521µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NTMTS4D3N15MC | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 15 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc) Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V Power Dissipation (Max): 5W (Ta), 293W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 521µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NTMTSC4D3N15MC | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 15 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc) Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V Power Dissipation (Max): 5W (Ta), 293W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 521µA Supplier Device Package: 8-TDFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V |
товар відсутній |
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NTMTSC4D3N15MC | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 15 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc) Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V Power Dissipation (Max): 5W (Ta), 293W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 521µA Supplier Device Package: 8-TDFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V |
на замовлення 2690 шт: термін постачання 21-31 дні (днів) |
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NTMTSC1D5N08MC | onsemi |
Description: MOSFET N-CH 80V 33A/287A 8DFNW Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 287A (Tc) Rds On (Max) @ Id, Vgs: 1.56mOhm @ 80A, 10V Power Dissipation (Max): 3.3W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 650µA Supplier Device Package: 8-TDFNW (8.3x8.4) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 40 V |
товар відсутній |
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NTMT190N65S3H | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFE Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V Power Dissipation (Max): 129W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.4mA Supplier Device Package: 4-TDFN (8x8) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 400 V |
товар відсутній |
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NTMT190N65S3H | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFE Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V Power Dissipation (Max): 129W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.4mA Supplier Device Package: 4-TDFN (8x8) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 400 V |
товар відсутній |
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NTMT150N65S3HF | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFE Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 5V @ 540µA Supplier Device Package: 4-PQFN (8x8) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V |
товар відсутній |
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NTMT150N65S3HF | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFE Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 5V @ 540µA Supplier Device Package: 4-PQFN (8x8) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V |
на замовлення 2874 шт: термін постачання 21-31 дні (днів) |
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NTMT125N65S3H | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFE Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 171W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.1mA Supplier Device Package: 4-TDFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NTMT125N65S3H | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFE Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 171W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.1mA Supplier Device Package: 4-TDFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ADP32120091MNR2G | onsemi |
Description: SWITCHING CONTROLLER Packaging: Bulk |
на замовлення 181383 шт: термін постачання 21-31 дні (днів) |
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ADP3212MNR2G | onsemi |
Description: IC REG CTRLR IMVP-6.5 1OUT 48QFN Packaging: Bulk Package / Case: 48-VFQFN Exposed Pad Voltage - Output: 0.3V ~ 1.5V Mounting Type: Surface Mount Number of Outputs: 1 Voltage - Input: 3.3V ~ 22V Operating Temperature: -40°C ~ 100°C Applications: Controller, Intel IMVP-6.5™ Supplier Device Package: 48-QFN (7x7) |
на замовлення 957926 шт: термін постачання 21-31 дні (днів) |
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ADP3212AMNR2G | onsemi |
Description: IC REG CTRLR IMVP-6.5 1OUT 48QFN Packaging: Bulk Package / Case: 48-VFQFN Exposed Pad Voltage - Output: Up to 1.5V Mounting Type: Surface Mount Number of Outputs: 1 Voltage - Input: 3.3V ~ 22V Operating Temperature: -40°C ~ 100°C Applications: Controller, Intel IMVP-6.5™ Supplier Device Package: 48-QFN (7x7) |
на замовлення 3830 шт: термін постачання 21-31 дні (днів) |
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MC74HC75D | onsemi | Description: 74HC75 - QUAD BISTABLE TRANSPARA |
товар відсутній |
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MCR8M | onsemi | Description: THYRISTOR SCR 600V 80A |
на замовлення 24150 шт: термін постачання 21-31 дні (днів) |
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SBC847CDXV6T1G | onsemi |
Description: TRANS 2NPN 45V 0.1A SOT-563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-563 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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SBC847CDXV6T1G | onsemi |
Description: TRANS 2NPN 45V 0.1A SOT-563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-563 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7807 шт: термін постачання 21-31 дні (днів) |
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NL17SZ374DBVT1G | onsemi |
Description: IC FF D-TYPE SNGL 1BIT SC74 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 5.5V Current - Quiescent (Iq): 1 µA Current - Output High, Low: 32mA, 32mA Trigger Type: Positive Edge Clock Frequency: 175 MHz Input Capacitance: 4 pF Supplier Device Package: SC-74 Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF Number of Bits per Element: 1 |
товар відсутній |
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SMSZ1600-18T3 | onsemi |
Description: DIODE ZENER 0.5W SPCL SOD123 Packaging: Bulk |
на замовлення 160000 шт: термін постачання 21-31 дні (днів) |
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PN4121 | onsemi |
Description: TRANS PNP 40V 0.1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 1V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
товар відсутній |
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5LN01C-TB-E | onsemi |
Description: MOSFET N-CH 50V 100MA 3CP Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V Power Dissipation (Max): 250mW (Ta) Supplier Device Package: SC-59-3/CP3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V |
на замовлення 574961 шт: термін постачання 21-31 дні (днів) |
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NVMYS6D2N06CLTWG | onsemi |
Description: MOSFET N-CH 60V 17A/71A 4LFPAK Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 2V @ 53µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 103345 шт: термін постачання 21-31 дні (днів) |
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NVBLS0D5N04CTXG | onsemi |
Description: MOSFET N-CH 40V 65A/300A 8HPSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Ta), 300A (Tc) Rds On (Max) @ Id, Vgs: 0.57mOhm @ 50A, 10V Power Dissipation (Max): 4.3W (Ta), 198.4W (Tc) Vgs(th) (Max) @ Id: 4V @ 475µA Supplier Device Package: 8-HPSOF Part Status: Active Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1860 шт: термін постачання 21-31 дні (днів) |
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SECO-RSL10-CAM-GEVB | onsemi | Description: - |
на замовлення 14 шт: термін постачання 21-31 дні (днів) |
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NCP500SQL28T1G | onsemi |
Description: IC REG LINEAR 2.8V 150MA 6DFN Packaging: Bulk Package / Case: 6-VDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 1 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 6-DFN (2x2.2) Voltage - Output (Min/Fixed): 2.8V Control Features: Enable PSRR: 62dB (1kHz) Voltage Dropout (Max): 0.25V @ 150mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 300 µA |
на замовлення 41500 шт: термін постачання 21-31 дні (днів) |
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NCP500SQL25T1G | onsemi |
Description: IC REG LINEAR 2.5V 150MA 6DFN Packaging: Bulk Package / Case: 6-VDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 1 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 6-DFN (2x2.2) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable PSRR: 62dB (1kHz) Voltage Dropout (Max): 0.27V @ 150mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 300 µA |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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NCP500SQL27T1G | onsemi |
Description: IC REG LINEAR 2.7V 150MA 6DFN Packaging: Bulk Package / Case: 6-VDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 1 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 6-DFN (2x2.2) Voltage - Output (Min/Fixed): 2.7V Control Features: Enable PSRR: 62dB (1kHz) Voltage Dropout (Max): 0.26V @ 150mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 300 µA |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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NCP500SQL33T1G | onsemi |
Description: IC REG LINEAR 3.3V 150MA 6DFN Packaging: Bulk Package / Case: 6-VDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 1 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 6-DFN (2x2.2) Voltage - Output (Min/Fixed): 3.3V Control Features: Enable PSRR: 62dB (1kHz) Voltage Dropout (Max): 0.23V @ 150mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 300 µA |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NCP500SN28T1G | onsemi |
Description: IC REG LINEAR 2.8V 150MA 5TSOP Packaging: Bulk Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 1 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 5-TSOP Voltage - Output (Min/Fixed): 2.8V Control Features: Enable PSRR: 62dB (1kHz) Voltage Dropout (Max): 0.25V @ 150mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 300 µA |
на замовлення 2216 шт: термін постачання 21-31 дні (днів) |
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NCP500SN26T1G | onsemi |
Description: IC REG LINEAR 2.6V 150MA 5TSOP Packaging: Bulk Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 1 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 5-TSOP Voltage - Output (Min/Fixed): 2.6V Control Features: Enable PSRR: 62dB (1kHz) Voltage Dropout (Max): 0.01V @ 1mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 300 µA |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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NCP500SN185T1G | onsemi |
Description: IC REG LINEAR 1.85V 150MA 5TSOP Packaging: Bulk Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 1 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 5-TSOP Voltage - Output (Min/Fixed): 1.85V Control Features: Enable PSRR: 62dB (1kHz) Voltage Dropout (Max): 0.01V @ 1mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 300 µA |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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NCP500SN27T1G | onsemi |
Description: IC REG LINEAR 2.7V 150MA 5TSOP Packaging: Bulk Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 1 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 5-TSOP Voltage - Output (Min/Fixed): 2.7V Control Features: Enable PSRR: 62dB (1kHz) Voltage Dropout (Max): 0.26V @ 150mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 300 µA |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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NCP51705MNTXG | onsemi |
Description: IC GATE DRVR LOW-SIDE 24QFN Packaging: Tape & Reel (TR) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 22V Input Type: Inverting, Non-Inverting Supplier Device Package: 24-QFN (4x4) Rise / Fall Time (Typ): 8ns, 8ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: SiC MOSFET Logic Voltage - VIL, VIH: 1.2V, 1.6V Current - Peak Output (Source, Sink): 6A, 6A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 15544 шт: термін постачання 21-31 дні (днів) |
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NCP51705MNTXG | onsemi |
Description: IC GATE DRVR LOW-SIDE 24QFN Packaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 22V Input Type: Inverting, Non-Inverting Supplier Device Package: 24-QFN (4x4) Rise / Fall Time (Typ): 8ns, 8ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: SiC MOSFET Logic Voltage - VIL, VIH: 1.2V, 1.6V Current - Peak Output (Source, Sink): 6A, 6A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 15544 шт: термін постачання 21-31 дні (днів) |
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CS5121KD16 | onsemi |
Description: ANA BUCK NONSYNC NFET CTL Packaging: Bulk Part Status: Active |
на замовлення 2559 шт: термін постачання 21-31 дні (днів) |
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NIS6432MT2TWG | onsemi |
Description: IC ELECTRONIC FUSE 12WQFN Packaging: Tape & Reel (TR) Package / Case: 12-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 3.3V Current - Output: 3A Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: 12-WQFN (3x2) Part Status: Active |
товар відсутній |
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NIS6432MT2TWG | onsemi |
Description: IC ELECTRONIC FUSE 12WQFN Packaging: Cut Tape (CT) Package / Case: 12-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 3.3V Current - Output: 3A Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: 12-WQFN (3x2) Part Status: Active |
на замовлення 2940 шт: термін постачання 21-31 дні (днів) |
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NCV8164CSNADJT1G | onsemi | Description: IC REG LIN POS ADJ 300MA 5TSOP |
товар відсутній |
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NCV8164CSNADJT1G | onsemi | Description: IC REG LIN POS ADJ 300MA 5TSOP |
на замовлення 2839 шт: термін постачання 21-31 дні (днів) |
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NIS6432MT1TWG | onsemi |
Description: IC ELECTRONIC FUSE 12WQFN Packaging: Tape & Reel (TR) Package / Case: 12-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 3.3V Current - Output: 3A Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: 12-WQFN (3x2) Part Status: Active |
товар відсутній |
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NIS6432MT1TWG | onsemi |
Description: IC ELECTRONIC FUSE 12WQFN Packaging: Cut Tape (CT) Package / Case: 12-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 3.3V Current - Output: 3A Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: 12-WQFN (3x2) Part Status: Active |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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SMT10B260T3 | onsemi |
Description: THY SMB SPECIAL SURGE Packaging: Bulk |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
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MMT05B260T3G | onsemi |
Description: THYRISTOR 200V 150A DO214AA Packaging: Bulk Capacitance: 75pF Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Number of Elements: 1 Voltage - Breakover: 320V Voltage - Off State: 200V Voltage - On State: 3 V Supplier Device Package: SMB Current - Hold (Ih): 150 mA Current - Peak Pulse (10/1000µs): 50 A Current - Peak Pulse (8/20µs): 150 A |
на замовлення 4182 шт: термін постачання 21-31 дні (днів) |
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MMT08B260T3G | onsemi | Description: THYRISTOR 200V 250A DO214AA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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MMT05B260T3 | onsemi |
Description: THYRISTOR 200V 150A DO214AA Packaging: Bulk Capacitance: 75pF Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Number of Elements: 1 Voltage - Breakover: 320V Voltage - Off State: 200V Voltage - On State: 3 V Supplier Device Package: SMB Current - Hold (Ih): 150 mA Current - Peak Pulse (10/1000µs): 50 A Current - Peak Pulse (8/20µs): 150 A |
на замовлення 2465 шт: термін постачання 21-31 дні (днів) |
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SZBZX84C3V0LT1 | onsemi |
Description: DIODE ZENER Packaging: Bulk Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3 V Impedance (Max) (Zzt): 95 Ohms Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 10 µA @ 1 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 39000 шт: термін постачання 21-31 дні (днів) |
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SZBZX84C3V0LT3 | onsemi | Description: ZENER DIODE, 3V, 0.25W, UNIDIREC |
товар відсутній |
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RD2006LS-S-SB5 | onsemi |
Description: FRD 20A 600V Packaging: Bulk Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-220FI(LS)-SB Operating Temperature - Junction: 150°C (Max) Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
на замовлення 21398 шт: термін постачання 21-31 дні (днів) |
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RD2006FR-H | onsemi | Description: DIODE GEN PURP 600V 20A TO220F |
товар відсутній |
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NL37WZ07US | onsemi | Description: IC BUFF/DVR TRPL N-INV OD US8 |
на замовлення 278845 шт: термін постачання 21-31 дні (днів) |
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NL37WZ16US | onsemi | Description: IC BUFFER TRIPLE NON-INVERT US8 |
товар відсутній |
FSAV433MTCX-ON |
Виробник: onsemi
Description: IC SWITCH SP3T X 3 9OHM 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 9Ohm
-3db Bandwidth: 550MHz
Supplier Device Package: 20-TSSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Crosstalk: -70dB @ 30MHz
Switch Circuit: SP3T
Multiplexer/Demultiplexer Circuit: 3:1
Switch Time (Ton, Toff) (Max): 5.5ns, 4ns
Channel Capacitance (CS(off), CD(off)): 3pF, 4pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 3
Description: IC SWITCH SP3T X 3 9OHM 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 9Ohm
-3db Bandwidth: 550MHz
Supplier Device Package: 20-TSSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Crosstalk: -70dB @ 30MHz
Switch Circuit: SP3T
Multiplexer/Demultiplexer Circuit: 3:1
Switch Time (Ton, Toff) (Max): 5.5ns, 4ns
Channel Capacitance (CS(off), CD(off)): 3pF, 4pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 3
на замовлення 52000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
398+ | 52.84 грн |
TIG064E8-TL-H-ON |
Виробник: onsemi
Description: N-CHANNEL IGBT FOR LIGHT-CONTROL
Packaging: Bulk
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 7V @ 2.5V, 100A
Supplier Device Package: 8-ECH
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector Pulsed (Icm): 150 A
Description: N-CHANNEL IGBT FOR LIGHT-CONTROL
Packaging: Bulk
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 7V @ 2.5V, 100A
Supplier Device Package: 8-ECH
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector Pulsed (Icm): 150 A
на замовлення 1169624 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
376+ | 57.78 грн |
NTMTSC002N10MCTXG |
Виробник: onsemi
Description: MOSFET N-CH 100V 45A/236A 8TDFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Power Dissipation (Max): 9W (Ta), 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 520µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V
Description: MOSFET N-CH 100V 45A/236A 8TDFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Power Dissipation (Max): 9W (Ta), 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 520µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V
товар відсутній
NTMTSC002N10MCTXG |
Виробник: onsemi
Description: MOSFET N-CH 100V 45A/236A 8TDFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Power Dissipation (Max): 9W (Ta), 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 520µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V
Description: MOSFET N-CH 100V 45A/236A 8TDFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Power Dissipation (Max): 9W (Ta), 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 520µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V
на замовлення 244 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 399.83 грн |
10+ | 323.01 грн |
100+ | 261.31 грн |
NTMTS6D0N15MC |
Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 15
Description: SINGLE N-CHANNEL POWER MOSFET 15
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 253.68 грн |
NTMTS6D0N15MC |
Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 15
Description: SINGLE N-CHANNEL POWER MOSFET 15
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 505.13 грн |
10+ | 437.12 грн |
100+ | 358.16 грн |
500+ | 286.13 грн |
1000+ | 241.32 грн |
NTMTSC1D6N10MCTXG |
Виробник: onsemi
Description: MOSFET N-CH 100V 35A/267A 8TDFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V
Power Dissipation (Max): 5.1W (Ta), 291W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V
Description: MOSFET N-CH 100V 35A/267A 8TDFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V
Power Dissipation (Max): 5.1W (Ta), 291W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 223.77 грн |
NTMTSC1D6N10MCTXG |
Виробник: onsemi
Description: MOSFET N-CH 100V 35A/267A 8TDFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V
Power Dissipation (Max): 5.1W (Ta), 291W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V
Description: MOSFET N-CH 100V 35A/267A 8TDFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V
Power Dissipation (Max): 5.1W (Ta), 291W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V
на замовлення 13952 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 459.35 грн |
10+ | 371.65 грн |
100+ | 300.67 грн |
500+ | 250.81 грн |
1000+ | 214.76 грн |
NTMTS4D3N15MC |
Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 15
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 293W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
Description: SINGLE N-CHANNEL POWER MOSFET 15
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 293W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 250.96 грн |
NTMTS4D3N15MC |
Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 15
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 293W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
Description: SINGLE N-CHANNEL POWER MOSFET 15
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 293W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 472.32 грн |
10+ | 389.73 грн |
100+ | 324.77 грн |
500+ | 268.93 грн |
1000+ | 242.04 грн |
NTMTSC4D3N15MC |
Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 15
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 293W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
Description: SINGLE N-CHANNEL POWER MOSFET 15
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 293W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
товар відсутній
NTMTSC4D3N15MC |
Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 15
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 293W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
Description: SINGLE N-CHANNEL POWER MOSFET 15
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 293W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
на замовлення 2690 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 437.99 грн |
10+ | 354.17 грн |
100+ | 286.49 грн |
500+ | 238.99 грн |
1000+ | 204.64 грн |
NTMTSC1D5N08MC |
Виробник: onsemi
Description: MOSFET N-CH 80V 33A/287A 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 287A (Tc)
Rds On (Max) @ Id, Vgs: 1.56mOhm @ 80A, 10V
Power Dissipation (Max): 3.3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 40 V
Description: MOSFET N-CH 80V 33A/287A 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 287A (Tc)
Rds On (Max) @ Id, Vgs: 1.56mOhm @ 80A, 10V
Power Dissipation (Max): 3.3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 40 V
товар відсутній
NTMT190N65S3H |
Виробник: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.4mA
Supplier Device Package: 4-TDFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.4mA
Supplier Device Package: 4-TDFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 400 V
товар відсутній
NTMT190N65S3H |
Виробник: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.4mA
Supplier Device Package: 4-TDFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.4mA
Supplier Device Package: 4-TDFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 400 V
товар відсутній
NTMT150N65S3HF |
Виробник: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V
товар відсутній
NTMT150N65S3HF |
Виробник: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V
на замовлення 2874 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 466.22 грн |
10+ | 377.09 грн |
100+ | 305.02 грн |
500+ | 254.45 грн |
1000+ | 217.87 грн |
NTMT125N65S3H |
Виробник: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.1mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.1mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 231.14 грн |
NTMT125N65S3H |
Виробник: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.1mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.1mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 474.61 грн |
10+ | 383.92 грн |
100+ | 310.58 грн |
500+ | 259.08 грн |
1000+ | 221.84 грн |
ADP32120091MNR2G |
на замовлення 181383 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
410+ | 51.42 грн |
ADP3212MNR2G |
Виробник: onsemi
Description: IC REG CTRLR IMVP-6.5 1OUT 48QFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 0.3V ~ 1.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V ~ 22V
Operating Temperature: -40°C ~ 100°C
Applications: Controller, Intel IMVP-6.5™
Supplier Device Package: 48-QFN (7x7)
Description: IC REG CTRLR IMVP-6.5 1OUT 48QFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 0.3V ~ 1.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V ~ 22V
Operating Temperature: -40°C ~ 100°C
Applications: Controller, Intel IMVP-6.5™
Supplier Device Package: 48-QFN (7x7)
на замовлення 957926 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
360+ | 59.94 грн |
ADP3212AMNR2G |
Виробник: onsemi
Description: IC REG CTRLR IMVP-6.5 1OUT 48QFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: Up to 1.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V ~ 22V
Operating Temperature: -40°C ~ 100°C
Applications: Controller, Intel IMVP-6.5™
Supplier Device Package: 48-QFN (7x7)
Description: IC REG CTRLR IMVP-6.5 1OUT 48QFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: Up to 1.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V ~ 22V
Operating Temperature: -40°C ~ 100°C
Applications: Controller, Intel IMVP-6.5™
Supplier Device Package: 48-QFN (7x7)
на замовлення 3830 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
258+ | 81.72 грн |
MCR8M |
Виробник: onsemi
Description: THYRISTOR SCR 600V 80A
Description: THYRISTOR SCR 600V 80A
на замовлення 24150 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1202+ | 17.98 грн |
SBC847CDXV6T1G |
Виробник: onsemi
Description: TRANS 2NPN 45V 0.1A SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-563
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS 2NPN 45V 0.1A SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-563
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 7.05 грн |
SBC847CDXV6T1G |
Виробник: onsemi
Description: TRANS 2NPN 45V 0.1A SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-563
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS 2NPN 45V 0.1A SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-563
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7807 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 26.71 грн |
16+ | 19.55 грн |
100+ | 11.72 грн |
500+ | 10.18 грн |
1000+ | 6.92 грн |
2000+ | 6.37 грн |
NL17SZ374DBVT1G |
Виробник: onsemi
Description: IC FF D-TYPE SNGL 1BIT SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 1 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 175 MHz
Input Capacitance: 4 pF
Supplier Device Package: SC-74
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Number of Bits per Element: 1
Description: IC FF D-TYPE SNGL 1BIT SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 1 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 175 MHz
Input Capacitance: 4 pF
Supplier Device Package: SC-74
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Number of Bits per Element: 1
товар відсутній
SMSZ1600-18T3 |
на замовлення 160000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11539+ | 2.14 грн |
PN4121 |
Виробник: onsemi
Description: TRANS PNP 40V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 1V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS PNP 40V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 1V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
товар відсутній
5LN01C-TB-E |
Виробник: onsemi
Description: MOSFET N-CH 50V 100MA 3CP
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
Power Dissipation (Max): 250mW (Ta)
Supplier Device Package: SC-59-3/CP3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V
Description: MOSFET N-CH 50V 100MA 3CP
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
Power Dissipation (Max): 250mW (Ta)
Supplier Device Package: SC-59-3/CP3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V
на замовлення 574961 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3806+ | 5.64 грн |
NVMYS6D2N06CLTWG |
Виробник: onsemi
Description: MOSFET N-CH 60V 17A/71A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 53µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 17A/71A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 53µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Qualification: AEC-Q101
на замовлення 103345 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 85.46 грн |
10+ | 67.01 грн |
100+ | 52.14 грн |
500+ | 41.48 грн |
1000+ | 33.79 грн |
NVBLS0D5N04CTXG |
Виробник: onsemi
Description: MOSFET N-CH 40V 65A/300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta), 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 50A, 10V
Power Dissipation (Max): 4.3W (Ta), 198.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 475µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 65A/300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta), 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 50A, 10V
Power Dissipation (Max): 4.3W (Ta), 198.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 475µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1860 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 606.62 грн |
10+ | 500.83 грн |
100+ | 417.34 грн |
500+ | 345.58 грн |
1000+ | 311.02 грн |
SECO-RSL10-CAM-GEVB |
Виробник: onsemi
Description: -
Description: -
на замовлення 14 шт:
термін постачання 21-31 дні (днів)NCP500SQL28T1G |
Виробник: onsemi
Description: IC REG LINEAR 2.8V 150MA 6DFN
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (2x2.2)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.25V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
Description: IC REG LINEAR 2.8V 150MA 6DFN
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (2x2.2)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.25V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
на замовлення 41500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1236+ | 16.91 грн |
NCP500SQL25T1G |
Виробник: onsemi
Description: IC REG LINEAR 2.5V 150MA 6DFN
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (2x2.2)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.27V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
Description: IC REG LINEAR 2.5V 150MA 6DFN
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (2x2.2)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.27V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1236+ | 16.91 грн |
NCP500SQL27T1G |
Виробник: onsemi
Description: IC REG LINEAR 2.7V 150MA 6DFN
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (2x2.2)
Voltage - Output (Min/Fixed): 2.7V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
Description: IC REG LINEAR 2.7V 150MA 6DFN
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (2x2.2)
Voltage - Output (Min/Fixed): 2.7V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1236+ | 16.91 грн |
NCP500SQL33T1G |
Виробник: onsemi
Description: IC REG LINEAR 3.3V 150MA 6DFN
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (2x2.2)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.23V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
Description: IC REG LINEAR 3.3V 150MA 6DFN
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (2x2.2)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.23V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1268+ | 16.91 грн |
NCP500SN28T1G |
Виробник: onsemi
Description: IC REG LINEAR 2.8V 150MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.25V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
Description: IC REG LINEAR 2.8V 150MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.25V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
на замовлення 2216 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1212+ | 17.61 грн |
NCP500SN26T1G |
Виробник: onsemi
Description: IC REG LINEAR 2.6V 150MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.6V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.01V @ 1mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
Description: IC REG LINEAR 2.6V 150MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.6V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.01V @ 1mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1212+ | 17.61 грн |
NCP500SN185T1G |
Виробник: onsemi
Description: IC REG LINEAR 1.85V 150MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 1.85V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.01V @ 1mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
Description: IC REG LINEAR 1.85V 150MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 1.85V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.01V @ 1mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1212+ | 17.61 грн |
NCP500SN27T1G |
Виробник: onsemi
Description: IC REG LINEAR 2.7V 150MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.7V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
Description: IC REG LINEAR 2.7V 150MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.7V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1212+ | 17.61 грн |
NCP51705MNTXG |
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 22V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 24-QFN (4x4)
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.6V
Current - Peak Output (Source, Sink): 6A, 6A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 22V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 24-QFN (4x4)
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.6V
Current - Peak Output (Source, Sink): 6A, 6A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 15544 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 156.03 грн |
NCP51705MNTXG |
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 22V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 24-QFN (4x4)
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.6V
Current - Peak Output (Source, Sink): 6A, 6A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 22V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 24-QFN (4x4)
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.6V
Current - Peak Output (Source, Sink): 6A, 6A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 15544 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 323.53 грн |
10+ | 279.36 грн |
25+ | 264.11 грн |
100+ | 203.79 грн |
250+ | 182.87 грн |
500+ | 176.26 грн |
1000+ | 144.11 грн |
CS5121KD16 |
на замовлення 2559 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
197+ | 107.8 грн |
NIS6432MT2TWG |
Виробник: onsemi
Description: IC ELECTRONIC FUSE 12WQFN
Packaging: Tape & Reel (TR)
Package / Case: 12-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.3V
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 12-WQFN (3x2)
Part Status: Active
Description: IC ELECTRONIC FUSE 12WQFN
Packaging: Tape & Reel (TR)
Package / Case: 12-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.3V
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 12-WQFN (3x2)
Part Status: Active
товар відсутній
NIS6432MT2TWG |
Виробник: onsemi
Description: IC ELECTRONIC FUSE 12WQFN
Packaging: Cut Tape (CT)
Package / Case: 12-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.3V
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 12-WQFN (3x2)
Part Status: Active
Description: IC ELECTRONIC FUSE 12WQFN
Packaging: Cut Tape (CT)
Package / Case: 12-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.3V
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 12-WQFN (3x2)
Part Status: Active
на замовлення 2940 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 120.56 грн |
10+ | 104.41 грн |
100+ | 83.93 грн |
500+ | 64.71 грн |
1000+ | 53.62 грн |
NCV8164CSNADJT1G |
Виробник: onsemi
Description: IC REG LIN POS ADJ 300MA 5TSOP
Description: IC REG LIN POS ADJ 300MA 5TSOP
на замовлення 2839 шт:
термін постачання 21-31 дні (днів)NIS6432MT1TWG |
Виробник: onsemi
Description: IC ELECTRONIC FUSE 12WQFN
Packaging: Tape & Reel (TR)
Package / Case: 12-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.3V
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 12-WQFN (3x2)
Part Status: Active
Description: IC ELECTRONIC FUSE 12WQFN
Packaging: Tape & Reel (TR)
Package / Case: 12-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.3V
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 12-WQFN (3x2)
Part Status: Active
товар відсутній
NIS6432MT1TWG |
Виробник: onsemi
Description: IC ELECTRONIC FUSE 12WQFN
Packaging: Cut Tape (CT)
Package / Case: 12-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.3V
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 12-WQFN (3x2)
Part Status: Active
Description: IC ELECTRONIC FUSE 12WQFN
Packaging: Cut Tape (CT)
Package / Case: 12-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.3V
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 12-WQFN (3x2)
Part Status: Active
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 122.85 грн |
10+ | 106.03 грн |
100+ | 82.66 грн |
500+ | 64.08 грн |
1000+ | 50.59 грн |
SMT10B260T3 |
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11539+ | 2.09 грн |
MMT05B260T3G |
Виробник: onsemi
Description: THYRISTOR 200V 150A DO214AA
Packaging: Bulk
Capacitance: 75pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 320V
Voltage - Off State: 200V
Voltage - On State: 3 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 150 A
Description: THYRISTOR 200V 150A DO214AA
Packaging: Bulk
Capacitance: 75pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 320V
Voltage - Off State: 200V
Voltage - On State: 3 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 150 A
на замовлення 4182 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1665+ | 12.68 грн |
MMT08B260T3G |
Виробник: onsemi
Description: THYRISTOR 200V 250A DO214AA
Description: THYRISTOR 200V 250A DO214AA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1603+ | 13.66 грн |
MMT05B260T3 |
Виробник: onsemi
Description: THYRISTOR 200V 150A DO214AA
Packaging: Bulk
Capacitance: 75pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 320V
Voltage - Off State: 200V
Voltage - On State: 3 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 150 A
Description: THYRISTOR 200V 150A DO214AA
Packaging: Bulk
Capacitance: 75pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 320V
Voltage - Off State: 200V
Voltage - On State: 3 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 150 A
на замовлення 2465 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1402+ | 14.8 грн |
SZBZX84C3V0LT1 |
Виробник: onsemi
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5323+ | 4.23 грн |
RD2006LS-S-SB5 |
Виробник: onsemi
Description: FRD 20A 600V
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220FI(LS)-SB
Operating Temperature - Junction: 150°C (Max)
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: FRD 20A 600V
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220FI(LS)-SB
Operating Temperature - Junction: 150°C (Max)
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 21398 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
701+ | 30.29 грн |
NL37WZ07US |
Виробник: onsemi
Description: IC BUFF/DVR TRPL N-INV OD US8
Description: IC BUFF/DVR TRPL N-INV OD US8
на замовлення 278845 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2404+ | 8.63 грн |