| Фото | Назва | Виробник | Інформація |
Доступність |
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| FEBFAN9673Q-B1H5000A-GEVB | onsemi | Description: EVALUATION BOARD |
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FFSP08120A | onsemi |
 Description: DIODE SIL CARB 1.2KV 8A TO220-2LPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 538pF @ 1V, 100kHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
на замовлення 2328 шт: термін постачання 21-31 дні (днів) |
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FGH40T70SHD-F155 | onsemi |
Description: 650V FS GEN3 TRENCH IGBT Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 37 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/66ns Switching Energy: 1.15mJ (on), 271µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 69 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 700 V Current - Collector Pulsed (Icm): 120 A Power - Max: 268 W |
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FGH50T65SQD-F155 | onsemi |
Description: IGBT TRENCH FS 650V 100A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 31 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/105ns Switching Energy: 180µJ (on), 45µJ (off) Test Condition: 400V, 12.5A, 4.7Ohm, 15V Gate Charge: 99 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 268 W |
на замовлення 173 шт: термін постачання 21-31 дні (днів) |
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| FGH75T65UPD-F155 | onsemi |
Description: 650V,75A FIELD STOP TRENCH IGBT Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 85 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A Supplier Device Package: TO-247 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 42ns/216ns Switching Energy: 3.68mJ (on), 1.6mJ (off) Test Condition: 400V, 75A, 3Ohm, 15V Gate Charge: 68 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 225 A Power - Max: 375 W |
на замовлення 7200 шт: термін постачання 21-31 дні (днів) |
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FGL12040WD | onsemi |
Description: IGBT TRENCH/FS 1200V 80A TO264-3 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 71 ns Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A Supplier Device Package: TO-264-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 45ns/560ns Switching Energy: 4.1mJ (on), 1mJ (off) Test Condition: 600V, 40A, 23Ohm, 15V Gate Charge: 226 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 391 W |
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| FNB80560T3 | onsemi |
Description: IC MTR DRVR 14V-16.5V SPMFA-A25 |
на замовлення 208 шт: термін постачання 21-31 дні (днів) |
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FOD8163 | onsemi |
Description: LOGIC GATE OPTOCOUPLER IN SOP 6- Packaging: Tube Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Open Collector, Schottky Clamped Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 3V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.45V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 25mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SOP Rise / Fall Time (Typ): 10ns, 20ns Common Mode Transient Immunity (Min): 20kV/µs Number of Channels: 1 Current - Output / Channel: 50 mA |
на замовлення 2068 шт: термін постачання 21-31 дні (днів) |
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FODM217AR2 | onsemi |
Description: 4 PIN TRANSISTOR OUTPUT MFP Packaging: Tape & Reel (TR) Package / Case: 4-SOIC (0.173", 4.40mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 80% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 160% @ 5mA Supplier Device Package: 4-SOP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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FODM217B | onsemi |
Description: 4 PIN TRANSISTOR OUTPUT MFP Packaging: Tube Package / Case: 4-SOIC (0.173", 4.40mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 130% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 260% @ 5mA Supplier Device Package: 4-SOP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 3µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 1881 шт: термін постачання 21-31 дні (днів) |
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FODM217C | onsemi |
Description: 4 PIN TRANSISTOR OUTPUT MFP Packaging: Tube Package / Case: 4-SOIC (0.173", 4.40mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 200% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 400% @ 5mA Supplier Device Package: 4-SOP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 4036 шт: термін постачання 21-31 дні (днів) |
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FODM217DR2 | onsemi |
Description: 4 PIN TRANSISTOR OUTPUT MFP Packaging: Tape & Reel (TR) Package / Case: 4-SOIC (0.173", 4.40mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 300% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SOP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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FODM3022R2V-NF098 | onsemi |
Description: 4-PIN MFP 400V RANDOM PHASE TRIA Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.2V Voltage - Isolation: 3750Vrms Approval Agency: UL Supplier Device Package: 4-MFP Zero Crossing Circuit: No Static dV/dt (Min): 10V/µs (Typ) Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 70 mA Voltage - Off State: 400 V Current - DC Forward (If) (Max): 60 mA |
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FQD5N50CTM-WS | onsemi |
Description: MOSFET N-CHANNEL 500V 4A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V |
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FQP3N50C-F080 | onsemi |
Description: MOSFET N-CH 500V 1.8A TO220-3 |
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FUSB302B10MPX | onsemi |
Description: IC CONTROLLER USB TYPE C 14MLP Packaging: Tape & Reel (TR) Package / Case: 14-WFQFN Exposed Pad Function: Controller Interface: I2C Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V, 5V Current - Supply: 560mA Protocol: USB Standards: USB 2.0 Supplier Device Package: 14-WQFN (2.5x2.5) Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FUSB302B11MPX | onsemi |
Description: IC CONTROLLER USB TYPE C 14MLP Packaging: Tape & Reel (TR) Package / Case: 14-WFQFN Exposed Pad Function: Controller Interface: I2C Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V, 5V Current - Supply: 560mA Protocol: USB Standards: USB 2.0 Supplier Device Package: 14-WQFN (2.5x2.5) Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 7877 шт: термін постачання 21-31 дні (днів) |
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FUSB302TMPX | onsemi |
Description: IC CONTROLLER USB TYPE C 14MLP Packaging: Tape & Reel (TR) Package / Case: 14-WFQFN Exposed Pad Function: Controller Interface: USB Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 5.5V Current - Supply: 560mA Protocol: USB Standards: USB 3.1 Supplier Device Package: 14-MLP (2.5x2.5) Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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GF001HN | onsemi |
Description: IC PWR SWITCH P-CHAN 2:1 8MDIP Packaging: Tube Features: Slew Rate Controlled Package / Case: 8-DIP (0.300", 7.62mm) Output Type: P-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: USB Switch Type: General Purpose Operating Temperature: -40°C ~ 105°C Output Configuration: High Side Rds On (Typ): 95mOhm Input Type: Differential Voltage - Load: 2.3V ~ 5.5V Voltage - Supply (Vcc/Vdd): 2.5V ~ 25V Current - Output (Max): 2.7A Ratio - Input:Output: 2:1 Supplier Device Package: 8-DIP Fault Protection: Reverse Current Part Status: Active |
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HCPL4503TSVM | onsemi |
Description: HI-SPEED TRANSISTOR 8-PIN SMD VD Packaging: Tube Package / Case: 8-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 19% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-DIP Gull Wing Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 250ns, 260ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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HGTP7N60A4-F102 | onsemi |
Description: IGBT 600V 34A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 11ns/100ns Switching Energy: 55µJ (on), 150µJ (off) Test Condition: 390V, 7A, 25Ohm, 15V Gate Charge: 60 nC Part Status: Obsolete Current - Collector (Ic) (Max): 34 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 56 A Power - Max: 125 W |
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HUF75639P3-F102 | onsemi |
Description: MOSFET N-CH 100V 56A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MOC3071M | onsemi |
Description: 6-PIN DIP RAND. PHASE TRIAC OUTP Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Triac Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.18V Voltage - Isolation: 4170Vrms Approval Agency: UL Current - Hold (Ih): 540µA (Typ) Supplier Device Package: 6-DIP Zero Crossing Circuit: No Static dV/dt (Min): 1kV/µs Current - LED Trigger (Ift) (Max): 15mA Part Status: Active Number of Channels: 1 Voltage - Off State: 800 V Current - DC Forward (If) (Max): 60 mA |
на замовлення 1325 шт: термін постачання 21-31 дні (днів) |
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MOC3071SM | onsemi |
Description: 6-PIN DIP RAND. PHASE TRIAC OUTP Packaging: Tube Package / Case: 6-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.18V Voltage - Isolation: 4170Vrms Approval Agency: UL Current - Hold (Ih): 540µA (Typ) Supplier Device Package: 6-SMD Zero Crossing Circuit: No Static dV/dt (Min): 1kV/µs Current - LED Trigger (Ift) (Max): 15mA Part Status: Active Number of Channels: 1 Voltage - Off State: 800 V Current - DC Forward (If) (Max): 60 mA |
на замовлення 980 шт: термін постачання 21-31 дні (днів) |
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MOC3072M | onsemi |
Description: 6-PIN DIP RAND. PHASE TRIAC OUTP Packaging: Bulk Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Triac Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.18V Voltage - Isolation: 4170Vrms Approval Agency: UL Current - Hold (Ih): 540µA (Typ) Supplier Device Package: 6-DIP Zero Crossing Circuit: No Static dV/dt (Min): 1kV/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Voltage - Off State: 800 V Current - DC Forward (If) (Max): 60 mA |
на замовлення 72 шт: термін постачання 21-31 дні (днів) |
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MOC3072SM | onsemi |
Description: 6-PIN DIP RAND. PHASE TRIAC OUTP Packaging: Bulk Package / Case: 6-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.18V Voltage - Isolation: 4170Vrms Approval Agency: UL Current - Hold (Ih): 540µA (Typ) Supplier Device Package: 6-SMD Zero Crossing Circuit: No Static dV/dt (Min): 1kV/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Voltage - Off State: 800 V Current - DC Forward (If) (Max): 60 mA |
на замовлення 990 шт: термін постачання 21-31 дні (днів) |
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RHRP15120-F102 | onsemi |
Description: DIODE GEN PURP 1.2KV 15A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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RHRP1560-F102 | onsemi |
Description: DIODE GEN PURP 600V 15A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
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RHRP30120-F102 | onsemi |
Description: DIODE GEN PURP 1.2KV 30A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
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RHRP3060-F102 | onsemi |
Description: DIODE GEN PURP 600V 30A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V |
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RHRP8120-F102 | onsemi |
Description: DIODE GEN PURP 1.2KV 8A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
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RHRP860-F102 | onsemi |
Description: DIODE GEN PURP 600V 8A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
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FDS4465_SN00187 | onsemi |
Description: MOSFET P-CHANNEL 20V 13.5A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 4.5V Power Dissipation (Max): 1.2W Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8237 pF @ 10 V |
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FDS8958B_G | onsemi |
Description: MOSFET N/P-CH 30V 6.4A/4.5A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.4A, 4.5A Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V, 760pF @ 15V Rds On (Max) @ Id, Vgs: 26mOhm @ 6.4A, 10V, 51mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 4.5V, 9.6nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
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FGD4536TM_SN00306 | onsemi |
Description: IGBT 360V 125W DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A Supplier Device Package: TO-252AA IGBT Type: Trench Gate Charge: 47 nC Part Status: Obsolete Voltage - Collector Emitter Breakdown (Max): 360 V Current - Collector Pulsed (Icm): 220 A Power - Max: 125 W |
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| FDC655BN_NBNN007 | onsemi |
Description: MOSFET N-CH 30V 6.3A SUPERSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 6.3A, 10V Power Dissipation (Max): 800mW Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V |
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| MMBTH81_F080 | onsemi |
Description: RF TRANS PNP 20V 600MHZ SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 225mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 20V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Frequency - Transition: 600MHz Supplier Device Package: SOT-23 Part Status: Obsolete |
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| NC7SB3157L6X_F131 | onsemi | Description: IC SWITCH SPDT 6MICROPAK |
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| 6385_2N2907A | onsemi |
Description: TRANS PNP 60V 0.6A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V Supplier Device Package: TO-18 Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W |
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| 6585_2N4209 | onsemi |
Description: TRANS PNP 15V 0.05A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 1mA, 5V Frequency - Transition: 850MHz Supplier Device Package: Die Part Status: Obsolete Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 300 mW |
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| 6685_2N3906 | onsemi |
Description: TRANS PNP 40V 0.2A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Frequency - Transition: 250MHz Supplier Device Package: Die Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
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| 6785_2N4033 | onsemi |
Description: TRANS PNP 80V 1A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 100µA, 5V Supplier Device Package: Die Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW |
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FSB127AHN | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8DIP Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 70% Internal Switch(s): Four Switches Voltage - Breakdown: 700V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 6V ~ 30V Supplier Device Package: 8-DIP Fault Protection: Over Voltage Voltage - Start Up: 12 V Part Status: Obsolete |
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FSBB30CH60CS | onsemi |
Description: SMART POWER MODULE Packaging: Bulk Package / Case: 27-DIP Module Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2500Vrms Part Status: Obsolete Current: 30 A Voltage: 600 V |
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KA431AZTA_F081 | onsemi |
Description: IC VREF SHUNT ADJ 1% TO92-3 Tolerance: ±1% Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Through Hole Reference Type: Shunt Operating Temperature: -25°C ~ 85°C (TA) Supplier Device Package: TO-92-3 Voltage - Output (Min/Fixed): 2.495V Part Status: Obsolete Current - Cathode: 1 mA Current - Output: 100 mA Voltage - Output (Max): 36 V |
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| FCA47N60F_SN00171 | onsemi |
Description: MOSFET N-CH 600V 47A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 73mOhm @ 23.5A, 10V Power Dissipation (Max): 417W Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
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| SG6105Z | onsemi |
Description: IC POWER SUPPLY SUPERVISOR 20DIP Packaging: Tube Part Status: Obsolete DigiKey Programmable: Not Verified |
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NCV8403BDTRKG | onsemi |
Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK Features: Auto Restart Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 53mOhm Input Type: Non-Inverting Voltage - Load: 42V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 14A Ratio - Input:Output: 1:1 Supplier Device Package: DPAK Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NCV8406BDTRKG | onsemi |
Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK Features: Auto Restart Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 185mOhm Input Type: Non-Inverting Voltage - Load: 60V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 7A Ratio - Input:Output: 1:1 Supplier Device Package: DPAK Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage |
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| NVMFS5C450NLWFAFT1G | onsemi |
Description: MOSFET N-CH 40V 110A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V |
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NVMFS5C670NLWFAFT1G | onsemi |
Description: MOSFET N-CH 60V 17A/71A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V Power Dissipation (Max): 61W (Tc) Vgs(th) (Max) @ Id: 2V @ 53µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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| FAN6863SWRTY | onsemi |
Description: IC OFFLINE SWITCH SOT23-6 Packaging: Tape & Reel (TR) Part Status: Obsolete |
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| FAN6863TY_SN00257 | onsemi |
Description: IC PWM CONTROLLER SOT23-6 Packaging: Tape & Reel (TR) Part Status: Obsolete |
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| FAN6961CSY | onsemi |
Description: IC PFC CTRLR 8SOIC Packaging: Tape & Reel (TR) Part Status: Obsolete |
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| LTA809FA | onsemi |
Description: IC CONTROLLER Packaging: Bulk Part Status: Obsolete |
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NVTFS5C454NLWFTAG | onsemi |
Description: MOSFET N-CHANNEL 40V 85A 8WDFN |
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AX8052F143-3-TB05 | onsemi |
Description: IC RF TXRX+MCU ISM<1GHZ 40VFQFN Packaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Sensitivity: -137dBm Mounting Type: Surface Mount Frequency: 27MHz ~ 1.05GHz Memory Size: 64kB Flash, 8.25kB SRAM Type: TxRx + MCU Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 3.6V Power - Output: 16dBm Protocol: SIGFOX™, Wireless M-Bus, Z-Wave® Current - Receiving: 6.5mA ~ 11mA Data Rate (Max): 125kbps Current - Transmitting: 7.5mA ~ 48mA Supplier Device Package: 40-QFN (7x5) GPIO: 19 Modulation: 4FSK, ASK, FSK, GFSK, GMSK, MSK RF Family/Standard: General ISM < 1GHz Serial Interfaces: SPI, UART Part Status: Obsolete DigiKey Programmable: Not Verified |
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AX-SFUS-1-01-TB05 | onsemi |
Description: IC RF TXRX+MCU ISM<1GHZ 40QFN Packaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Mounting Type: Surface Mount Frequency: 900MHz Type: TxRx + MCU Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 3.6V Power - Output: 24dBm Protocol: SIGFOX™ Current - Receiving: 34mA Data Rate (Max): 600bps Current - Transmitting: 230mA Supplier Device Package: 40-QFN (7x5) GPIO: 8 Modulation: FSK, GFSK RF Family/Standard: General ISM < 1GHz Serial Interfaces: UART Part Status: Obsolete DigiKey Programmable: Not Verified |
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NTMFS5C682NLT1G | onsemi |
Description: MOSFET N-CH 60V 25A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 2V @ 16µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NGTB40N65IHRTG | onsemi |
Description: IGBT 650V 40A Packaging: Tube |
на замовлення 80 шт: термін постачання 21-31 дні (днів) |
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| FFSP08120A |
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Виробник: onsemi
Description: DIODE SIL CARB 1.2KV 8A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 538pF @ 1V, 100kHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 8A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 538pF @ 1V, 100kHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 2328 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 465.89 грн |
| 10+ | 385.04 грн |
| 100+ | 320.86 грн |
| 500+ | 265.7 грн |
| 1000+ | 239.13 грн |
| 2000+ | 224.07 грн |
| FGH40T70SHD-F155 |
|
Виробник: onsemi
Description: 650V FS GEN3 TRENCH IGBT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/66ns
Switching Energy: 1.15mJ (on), 271µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 69 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
Description: 650V FS GEN3 TRENCH IGBT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/66ns
Switching Energy: 1.15mJ (on), 271µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 69 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
товар відсутній
| FGH50T65SQD-F155 |
|
Виробник: onsemi
Description: IGBT TRENCH FS 650V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/105ns
Switching Energy: 180µJ (on), 45µJ (off)
Test Condition: 400V, 12.5A, 4.7Ohm, 15V
Gate Charge: 99 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 268 W
Description: IGBT TRENCH FS 650V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/105ns
Switching Energy: 180µJ (on), 45µJ (off)
Test Condition: 400V, 12.5A, 4.7Ohm, 15V
Gate Charge: 99 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 268 W
на замовлення 173 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 308.33 грн |
| 30+ | 235.6 грн |
| 120+ | 201.95 грн |
| FGH75T65UPD-F155 |
|
Виробник: onsemi
Description: 650V,75A FIELD STOP TRENCH IGBT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 85 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/216ns
Switching Energy: 3.68mJ (on), 1.6mJ (off)
Test Condition: 400V, 75A, 3Ohm, 15V
Gate Charge: 68 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 375 W
Description: 650V,75A FIELD STOP TRENCH IGBT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 85 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/216ns
Switching Energy: 3.68mJ (on), 1.6mJ (off)
Test Condition: 400V, 75A, 3Ohm, 15V
Gate Charge: 68 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 375 W
на замовлення 7200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 450+ | 292.13 грн |
| FGL12040WD |
|
Виробник: onsemi
Description: IGBT TRENCH/FS 1200V 80A TO264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 71 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-264-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/560ns
Switching Energy: 4.1mJ (on), 1mJ (off)
Test Condition: 600V, 40A, 23Ohm, 15V
Gate Charge: 226 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 391 W
Description: IGBT TRENCH/FS 1200V 80A TO264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 71 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-264-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/560ns
Switching Energy: 4.1mJ (on), 1mJ (off)
Test Condition: 600V, 40A, 23Ohm, 15V
Gate Charge: 226 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 391 W
товар відсутній
| FNB80560T3 |
|
Виробник: onsemi
Description: IC MTR DRVR 14V-16.5V SPMFA-A25
Description: IC MTR DRVR 14V-16.5V SPMFA-A25
на замовлення 208 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 922.74 грн |
| 10+ | 816.04 грн |
| 100+ | 689.18 грн |
| FOD8163 |
|
Виробник: onsemi
Description: LOGIC GATE OPTOCOUPLER IN SOP 6-
Packaging: Tube
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SOP
Rise / Fall Time (Typ): 10ns, 20ns
Common Mode Transient Immunity (Min): 20kV/µs
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: LOGIC GATE OPTOCOUPLER IN SOP 6-
Packaging: Tube
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SOP
Rise / Fall Time (Typ): 10ns, 20ns
Common Mode Transient Immunity (Min): 20kV/µs
Number of Channels: 1
Current - Output / Channel: 50 mA
на замовлення 2068 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 206.56 грн |
| 10+ | 132.85 грн |
| 100+ | 102.21 грн |
| 500+ | 86.71 грн |
| 1000+ | 74.52 грн |
| 2000+ | 70.46 грн |
| FODM217AR2 |
|
Виробник: onsemi
Description: 4 PIN TRANSISTOR OUTPUT MFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 80% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 160% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: 4 PIN TRANSISTOR OUTPUT MFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 80% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 160% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 16.78 грн |
| 6000+ | 15.58 грн |
| FODM217B |
|
Виробник: onsemi
Description: 4 PIN TRANSISTOR OUTPUT MFP
Packaging: Tube
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 130% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 260% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 3µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: 4 PIN TRANSISTOR OUTPUT MFP
Packaging: Tube
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 130% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 260% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 3µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 1881 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 49.76 грн |
| 10+ | 31.22 грн |
| 100+ | 20.45 грн |
| 1000+ | 15.15 грн |
| FODM217C |
|
Виробник: onsemi
Description: 4 PIN TRANSISTOR OUTPUT MFP
Packaging: Tube
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: 4 PIN TRANSISTOR OUTPUT MFP
Packaging: Tube
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 4036 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 44.48 грн |
| 11+ | 28.17 грн |
| 100+ | 18.6 грн |
| 1000+ | 13.47 грн |
| 2000+ | 12.18 грн |
| FODM217DR2 |
|
Виробник: onsemi
Description: 4 PIN TRANSISTOR OUTPUT MFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 300% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: 4 PIN TRANSISTOR OUTPUT MFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 300% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 13.53 грн |
| 6000+ | 12.16 грн |
| 15000+ | 11.72 грн |
| FODM3022R2V-NF098 |
|
Виробник: onsemi
Description: 4-PIN MFP 400V RANDOM PHASE TRIA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Voltage - Isolation: 3750Vrms
Approval Agency: UL
Supplier Device Package: 4-MFP
Zero Crossing Circuit: No
Static dV/dt (Min): 10V/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
Description: 4-PIN MFP 400V RANDOM PHASE TRIA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Voltage - Isolation: 3750Vrms
Approval Agency: UL
Supplier Device Package: 4-MFP
Zero Crossing Circuit: No
Static dV/dt (Min): 10V/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
товар відсутній
| FQD5N50CTM-WS |
|
Виробник: onsemi
Description: MOSFET N-CHANNEL 500V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Description: MOSFET N-CHANNEL 500V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
товар відсутній
| FUSB302B10MPX |
|
Виробник: onsemi
Description: IC CONTROLLER USB TYPE C 14MLP
Packaging: Tape & Reel (TR)
Package / Case: 14-WFQFN Exposed Pad
Function: Controller
Interface: I2C
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V, 5V
Current - Supply: 560mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 14-WQFN (2.5x2.5)
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC CONTROLLER USB TYPE C 14MLP
Packaging: Tape & Reel (TR)
Package / Case: 14-WFQFN Exposed Pad
Function: Controller
Interface: I2C
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V, 5V
Current - Supply: 560mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 14-WQFN (2.5x2.5)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 51.85 грн |
| FUSB302B11MPX |
|
Виробник: onsemi
Description: IC CONTROLLER USB TYPE C 14MLP
Packaging: Tape & Reel (TR)
Package / Case: 14-WFQFN Exposed Pad
Function: Controller
Interface: I2C
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V, 5V
Current - Supply: 560mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 14-WQFN (2.5x2.5)
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC CONTROLLER USB TYPE C 14MLP
Packaging: Tape & Reel (TR)
Package / Case: 14-WFQFN Exposed Pad
Function: Controller
Interface: I2C
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V, 5V
Current - Supply: 560mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 14-WQFN (2.5x2.5)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 7877 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 51.85 грн |
| 6000+ | 48.01 грн |
| FUSB302TMPX |
|
Виробник: onsemi
Description: IC CONTROLLER USB TYPE C 14MLP
Packaging: Tape & Reel (TR)
Package / Case: 14-WFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Current - Supply: 560mA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 14-MLP (2.5x2.5)
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC CONTROLLER USB TYPE C 14MLP
Packaging: Tape & Reel (TR)
Package / Case: 14-WFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Current - Supply: 560mA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 14-MLP (2.5x2.5)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 35.88 грн |
| 6000+ | 33.26 грн |
| 15000+ | 32.22 грн |
| GF001HN |
|
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 2:1 8MDIP
Packaging: Tube
Features: Slew Rate Controlled
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: P-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: USB
Switch Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Output Configuration: High Side
Rds On (Typ): 95mOhm
Input Type: Differential
Voltage - Load: 2.3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): 2.5V ~ 25V
Current - Output (Max): 2.7A
Ratio - Input:Output: 2:1
Supplier Device Package: 8-DIP
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH P-CHAN 2:1 8MDIP
Packaging: Tube
Features: Slew Rate Controlled
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: P-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: USB
Switch Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Output Configuration: High Side
Rds On (Typ): 95mOhm
Input Type: Differential
Voltage - Load: 2.3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): 2.5V ~ 25V
Current - Output (Max): 2.7A
Ratio - Input:Output: 2:1
Supplier Device Package: 8-DIP
Fault Protection: Reverse Current
Part Status: Active
товар відсутній
| HCPL4503TSVM |
|
Виробник: onsemi
Description: HI-SPEED TRANSISTOR 8-PIN SMD VD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-DIP Gull Wing
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: HI-SPEED TRANSISTOR 8-PIN SMD VD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-DIP Gull Wing
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 229.18 грн |
| 10+ | 156.01 грн |
| 100+ | 127.81 грн |
| 500+ | 101.11 грн |
| 1000+ | 92.75 грн |
| HGTP7N60A4-F102 |
|
Виробник: onsemi
Description: IGBT 600V 34A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 11ns/100ns
Switching Energy: 55µJ (on), 150µJ (off)
Test Condition: 390V, 7A, 25Ohm, 15V
Gate Charge: 60 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 125 W
Description: IGBT 600V 34A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 11ns/100ns
Switching Energy: 55µJ (on), 150µJ (off)
Test Condition: 390V, 7A, 25Ohm, 15V
Gate Charge: 60 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 125 W
товар відсутній
| HUF75639P3-F102 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 56A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: MOSFET N-CH 100V 56A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 164.34 грн |
| 10+ | 131.4 грн |
| 100+ | 104.55 грн |
| 800+ | 83.02 грн |
| MOC3071M |
|
Виробник: onsemi
Description: 6-PIN DIP RAND. PHASE TRIAC OUTP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.18V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 540µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 15mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 60 mA
Description: 6-PIN DIP RAND. PHASE TRIAC OUTP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.18V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 540µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 15mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 60 mA
на замовлення 1325 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.6 грн |
| 50+ | 43.27 грн |
| 100+ | 28.35 грн |
| 1000+ | 21 грн |
| MOC3071SM |
|
Виробник: onsemi
Description: 6-PIN DIP RAND. PHASE TRIAC OUTP
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.18V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 540µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 15mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 60 mA
Description: 6-PIN DIP RAND. PHASE TRIAC OUTP
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.18V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 540µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 15mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 60 mA
на замовлення 980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 73.13 грн |
| 10+ | 44.65 грн |
| 100+ | 33.02 грн |
| 500+ | 28.47 грн |
| MOC3072M |
|
Виробник: onsemi
Description: 6-PIN DIP RAND. PHASE TRIAC OUTP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.18V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 540µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 60 mA
Description: 6-PIN DIP RAND. PHASE TRIAC OUTP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.18V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 540µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 60 mA
на замовлення 72 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 104.79 грн |
| 10+ | 63.52 грн |
| MOC3072SM |
|
Виробник: onsemi
Description: 6-PIN DIP RAND. PHASE TRIAC OUTP
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.18V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 540µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 60 mA
Description: 6-PIN DIP RAND. PHASE TRIAC OUTP
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.18V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 540µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 60 mA
на замовлення 990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 101.77 грн |
| 10+ | 61.78 грн |
| 100+ | 45.72 грн |
| 500+ | 39.43 грн |
| RHRP15120-F102 |
|
Виробник: onsemi
Description: DIODE GEN PURP 1.2KV 15A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 15A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 112.33 грн |
| RHRP1560-F102 |
|
Виробник: onsemi
Description: DIODE GEN PURP 600V 15A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 15A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товар відсутній
| RHRP30120-F102 |
|
Виробник: onsemi
Description: DIODE GEN PURP 1.2KV 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
товар відсутній
| RHRP3060-F102 |
|
Виробник: onsemi
Description: DIODE GEN PURP 600V 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Description: DIODE GEN PURP 600V 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
товар відсутній
| RHRP8120-F102 |
|
Виробник: onsemi
Description: DIODE GEN PURP 1.2KV 8A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 8A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній
| RHRP860-F102 |
|
Виробник: onsemi
Description: DIODE GEN PURP 600V 8A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 8A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товар відсутній
| FDS4465_SN00187 |
Виробник: onsemi
Description: MOSFET P-CHANNEL 20V 13.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 4.5V
Power Dissipation (Max): 1.2W
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8237 pF @ 10 V
Description: MOSFET P-CHANNEL 20V 13.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 4.5V
Power Dissipation (Max): 1.2W
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8237 pF @ 10 V
товар відсутній
| FDS8958B_G |
Виробник: onsemi
Description: MOSFET N/P-CH 30V 6.4A/4.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V, 760pF @ 15V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.4A, 10V, 51mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 4.5V, 9.6nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Description: MOSFET N/P-CH 30V 6.4A/4.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V, 760pF @ 15V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.4A, 10V, 51mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 4.5V, 9.6nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
товар відсутній
| FGD4536TM_SN00306 |
Виробник: onsemi
Description: IGBT 360V 125W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-252AA
IGBT Type: Trench
Gate Charge: 47 nC
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 360 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 125 W
Description: IGBT 360V 125W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-252AA
IGBT Type: Trench
Gate Charge: 47 nC
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 360 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 125 W
товар відсутній
| FDC655BN_NBNN007 |
Виробник: onsemi
Description: MOSFET N-CH 30V 6.3A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.3A, 10V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V
Description: MOSFET N-CH 30V 6.3A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.3A, 10V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V
товар відсутній
| MMBTH81_F080 |
Виробник: onsemi
Description: RF TRANS PNP 20V 600MHZ SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 225mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Frequency - Transition: 600MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
Description: RF TRANS PNP 20V 600MHZ SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 225mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Frequency - Transition: 600MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
товар відсутній
| 6385_2N2907A |
Виробник: onsemi
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Supplier Device Package: TO-18
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Supplier Device Package: TO-18
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
товар відсутній
| 6585_2N4209 |
Виробник: onsemi
Description: TRANS PNP 15V 0.05A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 1mA, 5V
Frequency - Transition: 850MHz
Supplier Device Package: Die
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 300 mW
Description: TRANS PNP 15V 0.05A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 1mA, 5V
Frequency - Transition: 850MHz
Supplier Device Package: Die
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 300 mW
товар відсутній
| 6685_2N3906 |
Виробник: onsemi
Description: TRANS PNP 40V 0.2A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: Die
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS PNP 40V 0.2A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: Die
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
товар відсутній
| 6785_2N4033 |
Виробник: onsemi
Description: TRANS PNP 80V 1A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 100µA, 5V
Supplier Device Package: Die
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Description: TRANS PNP 80V 1A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 100µA, 5V
Supplier Device Package: Die
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
товар відсутній
| FSB127AHN |
|
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 70%
Internal Switch(s): Four Switches
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6V ~ 30V
Supplier Device Package: 8-DIP
Fault Protection: Over Voltage
Voltage - Start Up: 12 V
Part Status: Obsolete
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 70%
Internal Switch(s): Four Switches
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6V ~ 30V
Supplier Device Package: 8-DIP
Fault Protection: Over Voltage
Voltage - Start Up: 12 V
Part Status: Obsolete
товар відсутній
| FSBB30CH60CS |
Виробник: onsemi
Description: SMART POWER MODULE
Packaging: Bulk
Package / Case: 27-DIP Module
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 30 A
Voltage: 600 V
Description: SMART POWER MODULE
Packaging: Bulk
Package / Case: 27-DIP Module
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 30 A
Voltage: 600 V
товар відсутній
| KA431AZTA_F081 |
Виробник: onsemi
Description: IC VREF SHUNT ADJ 1% TO92-3
Tolerance: ±1%
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT ADJ 1% TO92-3
Tolerance: ±1%
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
товар відсутній
| FCA47N60F_SN00171 |
Виробник: onsemi
Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товар відсутній
| SG6105Z |
Виробник: onsemi
Description: IC POWER SUPPLY SUPERVISOR 20DIP
Packaging: Tube
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC POWER SUPPLY SUPERVISOR 20DIP
Packaging: Tube
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
| NCV8403BDTRKG |
|
Виробник: onsemi
Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 53mOhm
Input Type: Non-Inverting
Voltage - Load: 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 14A
Ratio - Input:Output: 1:1
Supplier Device Package: DPAK
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q101
Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 53mOhm
Input Type: Non-Inverting
Voltage - Load: 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 14A
Ratio - Input:Output: 1:1
Supplier Device Package: DPAK
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 46.81 грн |
| NCV8406BDTRKG |
|
Виробник: onsemi
Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 185mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: DPAK
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 185mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: DPAK
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
товар відсутній
| NVMFS5C450NLWFAFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 110A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Description: MOSFET N-CH 40V 110A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
товар відсутній
| NVMFS5C670NLWFAFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 17A/71A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 53µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 17A/71A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 53µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| FAN6863SWRTY |
Виробник: onsemi
Description: IC OFFLINE SWITCH SOT23-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: IC OFFLINE SWITCH SOT23-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товар відсутній
| FAN6863TY_SN00257 |
Виробник: onsemi
Description: IC PWM CONTROLLER SOT23-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: IC PWM CONTROLLER SOT23-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товар відсутній
| FAN6961CSY |
товар відсутній
| LTA809FA |
товар відсутній
| AX8052F143-3-TB05 |
|
Виробник: onsemi
Description: IC RF TXRX+MCU ISM<1GHZ 40VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -137dBm
Mounting Type: Surface Mount
Frequency: 27MHz ~ 1.05GHz
Memory Size: 64kB Flash, 8.25kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 16dBm
Protocol: SIGFOX™, Wireless M-Bus, Z-Wave®
Current - Receiving: 6.5mA ~ 11mA
Data Rate (Max): 125kbps
Current - Transmitting: 7.5mA ~ 48mA
Supplier Device Package: 40-QFN (7x5)
GPIO: 19
Modulation: 4FSK, ASK, FSK, GFSK, GMSK, MSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU ISM<1GHZ 40VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -137dBm
Mounting Type: Surface Mount
Frequency: 27MHz ~ 1.05GHz
Memory Size: 64kB Flash, 8.25kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 16dBm
Protocol: SIGFOX™, Wireless M-Bus, Z-Wave®
Current - Receiving: 6.5mA ~ 11mA
Data Rate (Max): 125kbps
Current - Transmitting: 7.5mA ~ 48mA
Supplier Device Package: 40-QFN (7x5)
GPIO: 19
Modulation: 4FSK, ASK, FSK, GFSK, GMSK, MSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
| AX-SFUS-1-01-TB05 |
|
Виробник: onsemi
Description: IC RF TXRX+MCU ISM<1GHZ 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 900MHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 24dBm
Protocol: SIGFOX™
Current - Receiving: 34mA
Data Rate (Max): 600bps
Current - Transmitting: 230mA
Supplier Device Package: 40-QFN (7x5)
GPIO: 8
Modulation: FSK, GFSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU ISM<1GHZ 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 900MHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 24dBm
Protocol: SIGFOX™
Current - Receiving: 34mA
Data Rate (Max): 600bps
Current - Transmitting: 230mA
Supplier Device Package: 40-QFN (7x5)
GPIO: 8
Modulation: FSK, GFSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
| NTMFS5C682NLT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 25A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 16µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Description: MOSFET N-CH 60V 25A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 16µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 88.39 грн |
| NGTB40N65IHRTG |
|
на замовлення 80 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 205.05 грн |
| 10+ | 164.14 грн |