| Фото | Назва | Виробник | Інформація |
Доступність |
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NCV20091SQ3T2G | onsemi |
 Description: IC OPAMP GP 1 CIRCUIT SC88APackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 23µA Slew Rate: 0.15V/µs Gain Bandwidth Product: 350 kHz Current - Input Bias: 1 pA Voltage - Input Offset: 500 µV Supplier Device Package: SC-88A (SC-70-5/SOT-353) Grade: Automotive Number of Circuits: 1 Current - Output / Channel: 8.5 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
на замовлення 2785 шт: термін постачання 21-31 дні (днів) |
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FAN6248HAMX | onsemi |
Description: LLC SR CONTROLLER Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Voltage - Input: 4V ~ 4.7V Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0V ~ 27V Applications: Secondary-Side Controller, Synchronous Rectifier Supplier Device Package: 8-SOIC Current - Supply: 8.5 mA DigiKey Programmable: Not Verified |
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FAN6248HBMX | onsemi |
Description: LLC SR CONTROLLER Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Voltage - Input: 4V ~ 4.7V Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0V ~ 27V Applications: Secondary-Side Controller, Synchronous Rectifier Supplier Device Package: 8-SOIC Current - Supply: 8.5 mA DigiKey Programmable: Not Verified |
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| FAN6293PDMX | onsemi |
Description: W2B ADAPTIVE TRAVEL ADAPTER Packaging: Tape & Reel (TR) Part Status: Obsolete DigiKey Programmable: Not Verified |
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FCH099N65S3_F155 | onsemi |
Description: MOSFET N-CH 650V 30A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V |
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FCP099N65S3 | onsemi |
Description: MOSFET N-CH 650V 30A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3mA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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FCP190N65S3 | onsemi |
Description: MOSFET N-CH 650V 17A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V Power Dissipation (Max): 144W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.7mA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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FCPF099N65S3 | onsemi |
Description: MOSFET N-CH 650V 30A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3mA Supplier Device Package: TO-220F Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 400 V |
на замовлення 22404 шт: термін постачання 21-31 дні (днів) |
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FCPF125N65S3 | onsemi |
Description: MOSFET N-CH 650V 24A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.4mA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 400 V |
на замовлення 563 шт: термін постачання 21-31 дні (днів) |
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FCPF190N65S3L1 | onsemi |
Description: MOSFET N-CH 650V 14A TO220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.4mA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 400 V |
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FCPF250N65S3L1 | onsemi |
Description: MOSFET N-CH 650V 12A TO220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.2mA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V |
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FDB9406L-F085 | onsemi |
Description: MOSFET N-CH 40V 110A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V Power Dissipation (Max): 176W (Tj) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 20 V Qualification: AEC-Q101 |
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FDD86367 | onsemi |
Description: MOSFET N-CH 80V 100A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 80A, 10V Power Dissipation (Max): 227W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4840 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 32500 шт: термін постачання 21-31 дні (днів) |
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FDD86369 | onsemi |
Description: MOSFET N-CH 80V 90A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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FDMF3170 | onsemi |
Description: IC HALF BRIDGE DRIVER 55A 39QFN Packaging: Tape & Reel (TR) Package / Case: 39-PowerVFQFN Mounting Type: Surface Mount Interface: Logic, PWM Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 4.5V ~ 5.5V Applications: General Purpose Current - Output / Channel: 55A Current - Peak Output: 70A Technology: Power MOSFET Voltage - Load: 4.5V ~ 16V Supplier Device Package: 39-PQFN (5x6) Fault Protection: Current Limiting, Over Temperature, UVLO Load Type: Inductive |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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FDMF8811 | onsemi |
Description: IC HALF BRIDGE DRIVER 20A 36QFN Packaging: Tape & Reel (TR) Package / Case: 36-PowerWFQFN Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 8V ~ 14V Applications: DC-DC Converters Current - Output / Channel: 20A Current - Peak Output: 4A Technology: Power MOSFET Supplier Device Package: 36-PQFN (7.5x6) Load Type: Inductive Part Status: Not For New Designs |
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FFSH20120A | onsemi |
Description: DIODE SCHOTTKY 1.2KV 30A TO247-2 |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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FFSP05120A | onsemi |
Description: DIODE SIL CARBIDE 1.2KV TO220-2L Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Supplier Device Package: TO-220-2L Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 5 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
на замовлення 2481 шт: термін постачання 21-31 дні (днів) |
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FGH75T65SQDTL4 | onsemi |
Description: IGBT TRENCH FS 650V 150A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 76 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: TO-247-4 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 44ns/276ns Switching Energy: 307µJ (on), 266µJ (off) Test Condition: 400V, 18.8A, 15Ohm, 15V Gate Charge: 128 nC Part Status: Obsolete Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A |
на замовлення 760 шт: термін постачання 21-31 дні (днів) |
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FL7740MX | onsemi |
Description: IC OFFLINE SWITCH FWD 10SOIC Packaging: Tape & Reel (TR) Package / Case: 10-SOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Frequency - Switching: 70kHz Internal Switch(s): No Output Isolation: Isolated Topology: Forward Converter Voltage - Supply (Vcc/Vdd): 17V ~ 19V Supplier Device Package: 10-SOIC Fault Protection: Over Load, Over Voltage |
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FOD8342TR2V | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 6SOP Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.268", 6.80mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.5V Current - Peak Output: 3A Technology: Optical Coupling Current - Output High, Low: 2.5A, 2.5A Voltage - Isolation: 5000Vrms Approval Agency: IEC/EN/DIN, UR Supplier Device Package: 6-SOP Rise / Fall Time (Typ): 38ns, 24ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 210ns, 210ns Pulse Width Distortion (Max): 65ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 10V ~ 30V |
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FOD8343 | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 6SOP Packaging: Tube Package / Case: 6-SOIC (0.268", 6.80mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.5V Current - Peak Output: 4A Technology: Optical Coupling Current - Output High, Low: 3A, 3A Voltage - Isolation: 5000Vrms Approval Agency: UR Supplier Device Package: 6-SOIC Rise / Fall Time (Typ): 38ns, 24ns Common Mode Transient Immunity (Min): 50kV/µs Propagation Delay tpLH / tpHL (Max): 210ns, 210ns Pulse Width Distortion (Max): 65ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 10V ~ 30V |
на замовлення 1601 шт: термін постачання 21-31 дні (днів) |
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FSB50450B | onsemi |
Description: 500V, 4A, 3PHASE, FRFET SMART PO Packaging: Tube Package / Case: 23-PowerDIP Module (0.551", 14.00mm) Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Inverter Voltage - Isolation: 1500Vrms Current: 2.2 A Voltage: 500 V |
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FSB50550B | onsemi |
Description: 500V, 5A, 3PHASE, FRFET SMART PO Packaging: Tube Package / Case: 23-PowerDIP Module (0.551", 14.00mm) Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Inverter Voltage - Isolation: 1500Vrms Part Status: Obsolete Current: 3 A Voltage: 500 V |
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FSBB15CH120DF | onsemi |
Description: SPM3V 1200V V2 15A Packaging: Tube Package / Case: 27-PowerDIP Module (1.205", 30.60mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2500Vrms Current: 15 A Voltage: 1.2 kV |
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AP0102AT2L00XPGAH3-GEVB | onsemi |
Description: BOARD EVAL 1 MP CO-PROCESSOR HB Packaging: Bulk Function: Video Processing Type: Video Utilized IC / Part: AP0102AT Supplied Contents: Board(s) Part Status: Active |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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| AP1302CSSL00SMGA0-DR1 | onsemi |
Description: IMAGE SENSOR 13 MP CO-PROCESSOR Packaging: Tray Function: * |
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| AR0130CSSC00SPCAH-S115-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0130CS Supplied Contents: Board(s) |
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| AR0130CSSM00SPCAH-S115-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0130CS Supplied Contents: Board(s) |
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AR0132AT6C00XPEAH3-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0132AT Supplied Contents: Board(s) |
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| AR0132AT6C00XPEAH3-S215-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0132AT Supplied Contents: Board(s) |
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| AR0132AT6C00XPEAH-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0132AT Supplied Contents: Board(s) |
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| AR0132AT6C00XPEAH-S215-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0132AT Supplied Contents: Board(s) |
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| AR0132AT6G00XPEAH3-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0132AT Supplied Contents: Board(s) |
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| AR0132AT6G00XPEAH-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0132AT Supplied Contents: Board(s) |
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| AR0132AT6M00XPEAH3-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0132AT Supplied Contents: Board(s) |
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| AR0132AT6M00XPEAH-S215-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0132AT Supplied Contents: Board(s) |
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| AR0132AT6R00XPEAH3-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0132AT Supplied Contents: Board(s) |
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| AR0132AT6R00XPEAH3-S215-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0132AT Supplied Contents: Board(s) |
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| AR0132AT6R00XPEAH-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0132AT Supplied Contents: Board(s) |
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| AR0132AT6R00XPEAH-S215-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0132AT Supplied Contents: Board(s) |
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AR0134CSSC00SUEAH3-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3 GS CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0134CS Supplied Contents: Board(s) Part Status: Active |
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| AR0134CSSC00SUEAH-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" GS CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0134CS Supplied Contents: Board(s) Part Status: Active |
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| AR0134CSSM00SPCAH-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" GS CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0134CS Supplied Contents: Board(s) Part Status: Active |
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| AR0134CSSM00SUEAH3-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" GS CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0134CS Supplied Contents: Board(s) Part Status: Active |
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| AR0134CSSM00SUEAH-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" GS CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0134CS Supplied Contents: Board(s) Part Status: Active |
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| AR0134CSSM25SUEAH3-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS MONO Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0134CS Supplied Contents: Board(s) Part Status: Active |
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AR0231AT7C00XUEAH3-GEVB | onsemi |
Description: BOARD EVAL 2MP 1/3 CIS 0 DEG CRA |
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AR0237CSSC12SHRAH3-GEVB | onsemi |
Description: BOARD EVAL 2MP 1/3 CIS 12 DEG MP Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0237CS Supplied Contents: Board(s) |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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AR0237IRSH00SPRAH3-GEVB | onsemi |
Description: BOARD EVAL 2MP 1/3 CIS RGB-IR 0 Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0237IR Supplied Contents: Board(s) |
товар відсутній |
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| AR0237IRSH12SHRA0-DR | onsemi |
Description: IMAGE SENSOR 2MP 1/3 CIS SO |
на замовлення 18240 шт: термін постачання 21-31 дні (днів) |
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AR0237IRSH12SHRAH3-GEVB | onsemi |
Description: BOARD EVAL 2MP 1/3 CIS RGB-IR 12 Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0237IR Supplied Contents: Board(s) |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
|
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AR0237IRSH12SPRAH3-GEVB | onsemi |
Description: BOARD EVAL 2MP 1/3 CIS RGB-IR 12 Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0237IR Supplied Contents: Board(s) |
товар відсутній |
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AR0238CSSC12SHRA0-DR1 | onsemi |
Description: IMAGE SENSOR 2MP 1/3 CIS SO Packaging: Tray Package / Case: 48-PLCC Type: CMOS Voltage - Supply: 1.8V, 2.8V Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1080V Supplier Device Package: 48-PLCC (11.43x11.43) Frames per Second: 60.0 |
товар відсутній |
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| AR0261CSSC30SMKAH3-GEVB | onsemi | Description: BOARD EVAL 2 MP 1/6" CIS HB |
товар відсутній |
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| AR0430CSSC34SMFAH3-GEVB | onsemi |
Description: BOARD EVAL 4 MP 1/3 CIS 34 DEG C Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0430CS Supplied Contents: Board(s) |
товар відсутній |
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AR0832MBSC25SUFAH-GEVB | onsemi |
Description: BOARD EVAL 8 MP 1/3" CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0832MB Supplied Contents: Board(s) Part Status: Active |
товар відсутній |
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AR1335CSSC11SMKAH3-GEVB | onsemi |
Description: BOARD EVAL 13 MP 1/3" CIS 11 DEG Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR1335CS Supplied Contents: Board(s) |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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AR1335CSSC32SMFAH3-GEVB | onsemi |
Description: BOARD EVAL 13 MP 1/3" CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR1335CS Supplied Contents: Board(s) Part Status: Active |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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| AR1337CSSC32SMFAH3-GEVB | onsemi |
Description: BOARD EVAL 13 MP 1/3.2" CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR1337CS Supplied Contents: Board(s) Part Status: Active |
товар відсутній |
| NCV20091SQ3T2G |
|
Виробник: onsemi
Description: IC OPAMP GP 1 CIRCUIT SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 23µA
Slew Rate: 0.15V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Grade: Automotive
Number of Circuits: 1
Current - Output / Channel: 8.5 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: IC OPAMP GP 1 CIRCUIT SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 23µA
Slew Rate: 0.15V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Grade: Automotive
Number of Circuits: 1
Current - Output / Channel: 8.5 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
на замовлення 2785 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.18 грн |
| 10+ | 42.83 грн |
| 25+ | 40.18 грн |
| 100+ | 28.58 грн |
| 250+ | 24.33 грн |
| 500+ | 23.11 грн |
| 1000+ | 17.35 грн |
| FAN6248HAMX |
|
Виробник: onsemi
Description: LLC SR CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 4V ~ 4.7V
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0V ~ 27V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Current - Supply: 8.5 mA
DigiKey Programmable: Not Verified
Description: LLC SR CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 4V ~ 4.7V
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0V ~ 27V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Current - Supply: 8.5 mA
DigiKey Programmable: Not Verified
товар відсутній
| FAN6248HBMX |
|
Виробник: onsemi
Description: LLC SR CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 4V ~ 4.7V
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0V ~ 27V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Current - Supply: 8.5 mA
DigiKey Programmable: Not Verified
Description: LLC SR CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 4V ~ 4.7V
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0V ~ 27V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Current - Supply: 8.5 mA
DigiKey Programmable: Not Verified
товар відсутній
| FAN6293PDMX |
Виробник: onsemi
Description: W2B ADAPTIVE TRAVEL ADAPTER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: W2B ADAPTIVE TRAVEL ADAPTER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
| FCH099N65S3_F155 |
|
Виробник: onsemi
Description: MOSFET N-CH 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V
Description: MOSFET N-CH 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V
товар відсутній
| FCP099N65S3 |
|
Виробник: onsemi
Description: MOSFET N-CH 650V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V
Description: MOSFET N-CH 650V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 279.79 грн |
| 50+ | 213.96 грн |
| 100+ | 183.39 грн |
| 500+ | 168.34 грн |
| FCP190N65S3 |
|
Виробник: onsemi
Description: MOSFET N-CH 650V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V
Description: MOSFET N-CH 650V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 166.51 грн |
| 50+ | 127.01 грн |
| 100+ | 108.87 грн |
| 500+ | 99.93 грн |
| FCPF099N65S3 |
|
Виробник: onsemi
Description: MOSFET N-CH 650V 30A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 400 V
Description: MOSFET N-CH 650V 30A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 400 V
на замовлення 22404 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 393.84 грн |
| 50+ | 300.35 грн |
| 100+ | 257.45 грн |
| 500+ | 214.76 грн |
| 1000+ | 183.89 грн |
| 2000+ | 173.15 грн |
| FCPF125N65S3 |
|
Виробник: onsemi
Description: MOSFET N-CH 650V 24A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 400 V
Description: MOSFET N-CH 650V 24A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 400 V
на замовлення 563 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 336.81 грн |
| 50+ | 256.69 грн |
| 100+ | 220.02 грн |
| 500+ | 183.53 грн |
| FCPF190N65S3L1 |
|
Виробник: onsemi
Description: MOSFET N-CH 650V 14A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.4mA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 400 V
Description: MOSFET N-CH 650V 14A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.4mA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 400 V
товар відсутній
| FCPF250N65S3L1 |
|
Виробник: onsemi
Description: MOSFET N-CH 650V 12A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
Description: MOSFET N-CH 650V 12A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
товар відсутній
| FDB9406L-F085 |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 176W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 176W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
| FDD86367 |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 80A, 10V
Power Dissipation (Max): 227W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4840 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 80A, 10V
Power Dissipation (Max): 227W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4840 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 32500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 63.77 грн |
| FDD86369 |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 51.14 грн |
| 5000+ | 47.4 грн |
| FDMF3170 |
|
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 55A 39QFN
Packaging: Tape & Reel (TR)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Current - Output / Channel: 55A
Current - Peak Output: 70A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 39-PQFN (5x6)
Fault Protection: Current Limiting, Over Temperature, UVLO
Load Type: Inductive
Description: IC HALF BRIDGE DRIVER 55A 39QFN
Packaging: Tape & Reel (TR)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Current - Output / Channel: 55A
Current - Peak Output: 70A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 39-PQFN (5x6)
Fault Protection: Current Limiting, Over Temperature, UVLO
Load Type: Inductive
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 113.92 грн |
| 6000+ | 105.25 грн |
| FDMF8811 |
|
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 20A 36QFN
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 14V
Applications: DC-DC Converters
Current - Output / Channel: 20A
Current - Peak Output: 4A
Technology: Power MOSFET
Supplier Device Package: 36-PQFN (7.5x6)
Load Type: Inductive
Part Status: Not For New Designs
Description: IC HALF BRIDGE DRIVER 20A 36QFN
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 14V
Applications: DC-DC Converters
Current - Output / Channel: 20A
Current - Peak Output: 4A
Technology: Power MOSFET
Supplier Device Package: 36-PQFN (7.5x6)
Load Type: Inductive
Part Status: Not For New Designs
товар відсутній
| FFSH20120A |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 1.2KV 30A TO247-2
Description: DIODE SCHOTTKY 1.2KV 30A TO247-2
на замовлення 450 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1186.83 грн |
| 10+ | 1050.41 грн |
| 100+ | 887.11 грн |
| FFSP05120A |
|
Виробник: onsemi
Description: DIODE SIL CARBIDE 1.2KV TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Supplier Device Package: TO-220-2L
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE SIL CARBIDE 1.2KV TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Supplier Device Package: TO-220-2L
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 2481 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 301.84 грн |
| 10+ | 244.32 грн |
| 100+ | 197.64 грн |
| 500+ | 164.87 грн |
| 1000+ | 141.17 грн |
| 2000+ | 132.93 грн |
| FGH75T65SQDTL4 |
|
Виробник: onsemi
Description: IGBT TRENCH FS 650V 150A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-4
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/276ns
Switching Energy: 307µJ (on), 266µJ (off)
Test Condition: 400V, 18.8A, 15Ohm, 15V
Gate Charge: 128 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Description: IGBT TRENCH FS 650V 150A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-4
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/276ns
Switching Energy: 307µJ (on), 266µJ (off)
Test Condition: 400V, 18.8A, 15Ohm, 15V
Gate Charge: 128 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
на замовлення 760 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 428.05 грн |
| 30+ | 329.07 грн |
| 120+ | 294.45 грн |
| 510+ | 243.82 грн |
| FL7740MX |
|
Виробник: onsemi
Description: IC OFFLINE SWITCH FWD 10SOIC
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Frequency - Switching: 70kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Forward Converter
Voltage - Supply (Vcc/Vdd): 17V ~ 19V
Supplier Device Package: 10-SOIC
Fault Protection: Over Load, Over Voltage
Description: IC OFFLINE SWITCH FWD 10SOIC
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Frequency - Switching: 70kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Forward Converter
Voltage - Supply (Vcc/Vdd): 17V ~ 19V
Supplier Device Package: 10-SOIC
Fault Protection: Over Load, Over Voltage
товар відсутній
| FOD8342TR2V |
|
Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 6SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: IEC/EN/DIN, UR
Supplier Device Package: 6-SOP
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 6SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: IEC/EN/DIN, UR
Supplier Device Package: 6-SOP
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
товар відсутній
| FOD8343 |
|
Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 6SOP
Packaging: Tube
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 3A, 3A
Voltage - Isolation: 5000Vrms
Approval Agency: UR
Supplier Device Package: 6-SOIC
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 6SOP
Packaging: Tube
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 3A, 3A
Voltage - Isolation: 5000Vrms
Approval Agency: UR
Supplier Device Package: 6-SOIC
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 1601 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 232.65 грн |
| 10+ | 149.21 грн |
| 100+ | 114.78 грн |
| 500+ | 97.37 грн |
| 1000+ | 83.68 грн |
| FSB50450B |
|
Виробник: onsemi
Description: 500V, 4A, 3PHASE, FRFET SMART PO
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.551", 14.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 2.2 A
Voltage: 500 V
Description: 500V, 4A, 3PHASE, FRFET SMART PO
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.551", 14.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 2.2 A
Voltage: 500 V
товар відсутній
| FSB50550B |
|
Виробник: onsemi
Description: 500V, 5A, 3PHASE, FRFET SMART PO
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.551", 14.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Part Status: Obsolete
Current: 3 A
Voltage: 500 V
Description: 500V, 5A, 3PHASE, FRFET SMART PO
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.551", 14.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Part Status: Obsolete
Current: 3 A
Voltage: 500 V
товар відсутній
| FSBB15CH120DF |
|
Виробник: onsemi
Description: SPM3V 1200V V2 15A
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Current: 15 A
Voltage: 1.2 kV
Description: SPM3V 1200V V2 15A
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Current: 15 A
Voltage: 1.2 kV
товар відсутній
| AP0102AT2L00XPGAH3-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1 MP CO-PROCESSOR HB
Packaging: Bulk
Function: Video Processing
Type: Video
Utilized IC / Part: AP0102AT
Supplied Contents: Board(s)
Part Status: Active
Description: BOARD EVAL 1 MP CO-PROCESSOR HB
Packaging: Bulk
Function: Video Processing
Type: Video
Utilized IC / Part: AP0102AT
Supplied Contents: Board(s)
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 25280.05 грн |
| AP1302CSSL00SMGA0-DR1 |
товар відсутній
| AR0130CSSC00SPCAH-S115-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0130CS
Supplied Contents: Board(s)
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0130CS
Supplied Contents: Board(s)
товар відсутній
| AR0130CSSM00SPCAH-S115-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0130CS
Supplied Contents: Board(s)
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0130CS
Supplied Contents: Board(s)
товар відсутній
| AR0132AT6C00XPEAH3-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
товар відсутній
| AR0132AT6C00XPEAH3-S215-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
товар відсутній
| AR0132AT6C00XPEAH-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
товар відсутній
| AR0132AT6C00XPEAH-S215-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
товар відсутній
| AR0132AT6G00XPEAH3-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
товар відсутній
| AR0132AT6G00XPEAH-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
товар відсутній
| AR0132AT6M00XPEAH3-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
товар відсутній
| AR0132AT6M00XPEAH-S215-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
товар відсутній
| AR0132AT6R00XPEAH3-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
товар відсутній
| AR0132AT6R00XPEAH3-S215-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
товар відсутній
| AR0132AT6R00XPEAH-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
товар відсутній
| AR0132AT6R00XPEAH-S215-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
товар відсутній
| AR0134CSSC00SUEAH3-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3 GS CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0134CS
Supplied Contents: Board(s)
Part Status: Active
Description: BOARD EVAL 1.2 MP 1/3 GS CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0134CS
Supplied Contents: Board(s)
Part Status: Active
товар відсутній
| AR0134CSSC00SUEAH-GEVB |
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" GS CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0134CS
Supplied Contents: Board(s)
Part Status: Active
Description: BOARD EVAL 1.2 MP 1/3" GS CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0134CS
Supplied Contents: Board(s)
Part Status: Active
товар відсутній
| AR0134CSSM00SPCAH-GEVB |
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" GS CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0134CS
Supplied Contents: Board(s)
Part Status: Active
Description: BOARD EVAL 1.2 MP 1/3" GS CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0134CS
Supplied Contents: Board(s)
Part Status: Active
товар відсутній
| AR0134CSSM00SUEAH3-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" GS CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0134CS
Supplied Contents: Board(s)
Part Status: Active
Description: BOARD EVAL 1.2 MP 1/3" GS CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0134CS
Supplied Contents: Board(s)
Part Status: Active
товар відсутній
| AR0134CSSM00SUEAH-GEVB |
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" GS CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0134CS
Supplied Contents: Board(s)
Part Status: Active
Description: BOARD EVAL 1.2 MP 1/3" GS CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0134CS
Supplied Contents: Board(s)
Part Status: Active
товар відсутній
| AR0134CSSM25SUEAH3-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS MONO
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0134CS
Supplied Contents: Board(s)
Part Status: Active
Description: BOARD EVAL 1.2 MP 1/3" CIS MONO
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0134CS
Supplied Contents: Board(s)
Part Status: Active
товар відсутній
| AR0231AT7C00XUEAH3-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 2MP 1/3 CIS 0 DEG CRA
Description: BOARD EVAL 2MP 1/3 CIS 0 DEG CRA
товар відсутній
| AR0237CSSC12SHRAH3-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 2MP 1/3 CIS 12 DEG MP
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0237CS
Supplied Contents: Board(s)
Description: BOARD EVAL 2MP 1/3 CIS 12 DEG MP
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0237CS
Supplied Contents: Board(s)
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 21735.52 грн |
| AR0237IRSH00SPRAH3-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 2MP 1/3 CIS RGB-IR 0
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0237IR
Supplied Contents: Board(s)
Description: BOARD EVAL 2MP 1/3 CIS RGB-IR 0
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0237IR
Supplied Contents: Board(s)
товар відсутній
| AR0237IRSH12SHRA0-DR |
|
Виробник: onsemi
Description: IMAGE SENSOR 2MP 1/3 CIS SO
Description: IMAGE SENSOR 2MP 1/3 CIS SO
на замовлення 18240 шт:
термін постачання 21-31 дні (днів)| AR0237IRSH12SHRAH3-GEVB |
Виробник: onsemi
Description: BOARD EVAL 2MP 1/3 CIS RGB-IR 12
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0237IR
Supplied Contents: Board(s)
Description: BOARD EVAL 2MP 1/3 CIS RGB-IR 12
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0237IR
Supplied Contents: Board(s)
на замовлення 4 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 21272.5 грн |
| AR0237IRSH12SPRAH3-GEVB |
Виробник: onsemi
Description: BOARD EVAL 2MP 1/3 CIS RGB-IR 12
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0237IR
Supplied Contents: Board(s)
Description: BOARD EVAL 2MP 1/3 CIS RGB-IR 12
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0237IR
Supplied Contents: Board(s)
товар відсутній
| AR0238CSSC12SHRA0-DR1 |
|
Виробник: onsemi
Description: IMAGE SENSOR 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 48-PLCC
Type: CMOS
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1080V
Supplier Device Package: 48-PLCC (11.43x11.43)
Frames per Second: 60.0
Description: IMAGE SENSOR 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 48-PLCC
Type: CMOS
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1080V
Supplier Device Package: 48-PLCC (11.43x11.43)
Frames per Second: 60.0
товар відсутній
| AR0430CSSC34SMFAH3-GEVB |
Виробник: onsemi
Description: BOARD EVAL 4 MP 1/3 CIS 34 DEG C
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0430CS
Supplied Contents: Board(s)
Description: BOARD EVAL 4 MP 1/3 CIS 34 DEG C
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0430CS
Supplied Contents: Board(s)
товар відсутній
| AR0832MBSC25SUFAH-GEVB |
Виробник: onsemi
Description: BOARD EVAL 8 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0832MB
Supplied Contents: Board(s)
Part Status: Active
Description: BOARD EVAL 8 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0832MB
Supplied Contents: Board(s)
Part Status: Active
товар відсутній
| AR1335CSSC11SMKAH3-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 13 MP 1/3" CIS 11 DEG
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR1335CS
Supplied Contents: Board(s)
Description: BOARD EVAL 13 MP 1/3" CIS 11 DEG
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR1335CS
Supplied Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 21716.51 грн |
| AR1335CSSC32SMFAH3-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 13 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR1335CS
Supplied Contents: Board(s)
Part Status: Active
Description: BOARD EVAL 13 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR1335CS
Supplied Contents: Board(s)
Part Status: Active
на замовлення 7 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 21716.51 грн |
| AR1337CSSC32SMFAH3-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 13 MP 1/3.2" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR1337CS
Supplied Contents: Board(s)
Part Status: Active
Description: BOARD EVAL 13 MP 1/3.2" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR1337CS
Supplied Contents: Board(s)
Part Status: Active
товар відсутній