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FQP13N50C_F105 FQP13N50C_F105 onsemi FQP13N50C_FQPF13N50C_RevC0_9-8-17.pdf Description: MOSFET N-CH 500V 13A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.5A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товар відсутній
FQPF10N60C_F105 FQPF10N60C_F105 onsemi FQP10N60C_FQPF10N60C_RevC1_9-8-17.pdf Description: MOSFET N-CH 600V 9.5A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.75A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
товар відсутній
FQPF13N50C_F105 FQPF13N50C_F105 onsemi FQP13N50C_FQPF13N50C_RevC0_9-8-17.pdf Description: MOSFET N-CH 500V 13A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.5A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товар відсутній
FSA9280AUMX_F065 onsemi Description: IC POWER MANAGEMENT
Features: I²C, USB 2.0
Packaging: Bulk
Package / Case: 20-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio, UART, USB
On-State Resistance (Max): 3Ohm (Audio), 10Ohm (USB)
Supplier Device Package: 20-UMLP (4x3)
Voltage - Supply, Single (V+): 3V ~ 4.4V
Multiplexer/Demultiplexer Circuit: 3:1
Part Status: Obsolete
Number of Channels: 1
товар відсутній
MBR0520L_G MBR0520L_G onsemi Description: DIODE SCHOTTKY 20V 500MA SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
товар відсутній
MMBF5485_NB50012 MMBF5485_NB50012 onsemi Description: IC POWER MANAGEMENT
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 10mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 4dB
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Voltage - Rated: 25 V
Voltage - Test: 15 V
товар відсутній
PZT3904_F081 PZT3904_F081 onsemi Description: TRANS NPN 40V 0.2A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
товар відсутній
5185_2N4391 onsemi Description: JFET N-CH
Packaging: Bulk
Part Status: Obsolete
товар відсутній
FAN6754MLMY_F116 onsemi Description: IC OFFLINE SWITCH
Packaging: Bulk
Part Status: Obsolete
товар відсутній
FCP20N60_G FCP20N60_G onsemi Description: MOSFET N-CH 600V 20A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
товар відсутній
FCPF11N60_G FCPF11N60_G onsemi Description: MOSFET N-CH 600V 11A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
товар відсутній
FCPF11N65_G onsemi Description: INTEGRATED CIRCUIT
Packaging: Bulk
Part Status: Obsolete
товар відсутній
FDB3632_SB82115 FDB3632_SB82115 onsemi Description: MOSFET N-CH 100V 12A/80A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
товар відсутній
FDD24AN06LA0_SB82179 FDD24AN06LA0_SB82179 onsemi Description: MOSFET N-CH 60V 7.1A/40A TO252AA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
товар відсутній
FDLL4148_NBD3001 onsemi Description: DIODE GEN PURP 100V 200MA SOD80
Packaging: Bulk
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
товар відсутній
FDN338P_G FDN338P_G onsemi Description: MOSFET P-CH 20V 1.6A SUPERSOT3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 451 pF @ 10 V
товар відсутній
FDN5618P_G FDN5618P_G onsemi Description: MOSFET P-CH 60V 1.25A SUPERSOT3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.25A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V
товар відсутній
FEBFAN6754AMR_CP450V1 onsemi FEBFAN6754AMR_CP450v1_Rev1.0.1_2011.pdf Description: INTEGRATED CIRCUIT
Packaging: Bulk
Voltage - Output: 19V
Voltage - Input: 90 ~ 264 VAC
Current - Output: 3.42A
Frequency - Switching: 50Hz ~ 60Hz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: FAN6754AMR, FAN6204MY
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary and Secondary Side
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
товар відсутній
FGD3040G2_SN00297 FGD3040G2_SN00297 onsemi Description: INTEGRATED CIRCUIT
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: -/4.8µs
Test Condition: 300V, 6.5A, 1kOhm, 5V
Gate Charge: 21 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 150 W
товар відсутній
FGPF4536YDTU_SN00305 onsemi Description: INTEGRATED CIRCUIT
товар відсутній
FMS6143CSX_NA3M248 FMS6143CSX_NA3M248 onsemi Description: IC VIDEO FILTER 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 4.75V ~ 5.25V
Applications: Consumer Video
Standards: NTSC
Supplier Device Package: 8-SOIC
товар відсутній
FMS6501MSA28X_NA3L222 FMS6501MSA28X_NA3L222 onsemi Description: IC VIDEO SWITCH 12X9 28SSOP
Packaging: Bulk
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Function: Switch Matrix
Voltage - Supply: 3.13V ~ 5.25V
Applications: Consumer Video
Supplier Device Package: 28-SSOP
Part Status: Obsolete
Control Interface: I²C
товар відсутній
FQPF5N60C_F105 FQPF5N60C_F105 onsemi Description: MOSFET N-CH 600V 4.5A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
товар відсутній
FSA2567UMX_F113 FSA2567UMX_F113 onsemi Description: INTEGRATED CIRCUIT
Packaging: Bulk
Features: Break-Before-Make
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Telecommunications
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 475MHz
Supplier Device Package: 16-UMLP (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Switch Circuit: 4PDT
Part Status: Obsolete
Number of Channels: 1
товар відсутній
FSL136MRG FSL136MRG onsemi fsl136mr-d.pdf Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C (TA)
Duty Cycle: 77%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 26V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 26 W
товар відсутній
FSL136MRS FSL136MRS onsemi fsl136mr-d.pdf Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C (TA)
Duty Cycle: 77%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 26V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 26 W
товар відсутній
ISL9V5036S3ST_SB82026C ISL9V5036S3ST_SB82026C onsemi Description: INTEGRATED CIRCUIT
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: -/10.8µs
Test Condition: 300V, 1kOhm, 5V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 46 A
Voltage - Collector Emitter Breakdown (Max): 390 V
Power - Max: 250 W
товар відсутній
LM317MDTX_G LM317MDTX_G onsemi Description: IC REG LINEAR POS ADJ 500MA DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: D-Pak
Voltage - Output (Max): 37V
Voltage - Output (Min/Fixed): 1.2V
Part Status: Obsolete
PSRR: 80dB (120Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
товар відсутній
LTA703S onsemi Description: INTEGRATED CIRCUIT
товар відсутній
MMBFJ177_G MMBFJ177_G onsemi Description: JFET P-CH 30V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
товар відсутній
MMBFJ201_G MMBFJ201_G onsemi Description: JFET N-CH 40V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 20 V
товар відсутній
MMBT3906_F080 MMBT3906_F080 onsemi Description: INTEGRATED CIRCUIT
товар відсутній
MMSD4148_G MMSD4148_G onsemi Description: DIODE GEN PURP 100V 200MA SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
товар відсутній
NC7SZ04M5X_F40 NC7SZ04M5X_F40 onsemi Description: IC INVERTER 1CH 1-INP SOT23-5
товар відсутній
NC7SZ32M5X_F40 NC7SZ32M5X_F40 onsemi Description: IC GATE OR 1CH 2-INP SOT23-5
товар відсутній
NDS9407_G NDS9407_G onsemi Description: MOSFET P-CH 60V 3A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 732 pF @ 30 V
товар відсутній
SG6859DTY onsemi SG6859D_Rev1.0.0_Feb2009.pdf Description: INTEGRATED CIRCUIT
Packaging: Bulk
Package / Case: SOT-23-6
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Frequency - Switching: 65kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9.5V ~ 22V
Supplier Device Package: SOT-26
Control Features: Current Limit, Frequency Control
Output Phases: 1
Duty Cycle (Max): 75%
Clock Sync: Yes
Part Status: Obsolete
Number of Outputs: 1
товар відсутній
FCU360N65S3R0 FCU360N65S3R0 onsemi fcu360n65s3r0-d.pdf Description: MOSFET N-CH 600V IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Supplier Device Package: IPAK
Part Status: Not For New Designs
на замовлення 1535 шт:
термін постачання 21-31 дні (днів)
2+155.3 грн
75+ 119.95 грн
150+ 98.69 грн
525+ 78.37 грн
1050+ 66.49 грн
Мінімальне замовлення: 2
KA431LZTA_F081 onsemi Description: IC VREF SHUNT ADJ TO92-3
Packaging: Tape & Box (TB)
Part Status: Obsolete
товар відсутній
FDB075N15A_SN00284 FDB075N15A_SN00284 onsemi Description: MOSFET N-CH 150V 130A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 75 V
товар відсутній
FDD9407_SN00283 FDD9407_SN00283 onsemi Description: MOSFET N-CH 40V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6390 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
FDN339AN_G FDN339AN_G onsemi Description: MOSFET N-CH 20V 3A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V
товар відсутній
FDS5672_F095 FDS5672_F095 onsemi Description: MOSFET N-CH 60V 12A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
товар відсутній
FDS6690A_NBBM015A FDS6690A_NBBM015A onsemi Description: MOSFET N-CH 30V 11A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 15 V
товар відсутній
FDS8984_F123 onsemi Description: MOSFET 2N-CH 30V 8-SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товар відсутній
FQD12N20LTM_SN00173 FQD12N20LTM_SN00173 onsemi Description: MOSFET N-CH 200V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
товар відсутній
PCFG40N120ANF onsemi Description: MOSFET N-CH
Packaging: Tape & Reel (TR)
товар відсутній
2N7000BU_T 2N7000BU_T onsemi Description: MOSFET N-CH 60V 200MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
товар відсутній
KA78R12CPWD onsemi Description: IC REG LINEAR 12V 1A
Packaging: Bulk
Output Type: Fixed
Current - Output: 1A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Voltage - Output (Min/Fixed): 12V
Control Features: Enable
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 1A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
товар відсутній
MJD31CETF onsemi Description: TRANS NPN
Packaging: Bulk
Part Status: Obsolete
товар відсутній
TIP31ATU_F129 TIP31ATU_F129 onsemi Description: TRANS NPN 60V 3A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
товар відсутній
TIP32CPWD onsemi Description: TRANS PNP 100V
Packaging: Bulk
Part Status: Obsolete
товар відсутній
BDW93CPWD onsemi Description: TRANS NPN 100V TO220
Packaging: Tube
Part Status: Obsolete
товар відсутній
FAN7085MX_SN00036 onsemi Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tube
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
FAN7631SJX_G onsemi Description: IC CTLR PFM RESON CONV 16SOIC
Packaging: Tube
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
PCFG40N120ANW onsemi Description: IGBT NPT 1200V
Packaging: Tube
товар відсутній
NCH-RSL10-101WC51-ABG NCH-RSL10-101WC51-ABG onsemi rsl10-d.pdf Description: IC RF TXRX+MCU BLE 51WLCSP
Packaging: Cut Tape (CT)
Package / Case: 51-XFBGA, WLCSP
Sensitivity: -94dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 6dBm
Protocol: Bluetooth v5.0
Current - Receiving: 3mA ~ 6.2mA
Data Rate (Max): 2Mbps
Current - Transmitting: 12mA ~ 25mA
Supplier Device Package: 51-WLCSP (2.33x2.36)
Modulation: FSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
на замовлення 4385 шт:
термін постачання 21-31 дні (днів)
1+607.62 грн
10+ 536.11 грн
25+ 487.37 грн
100+ 411.64 грн
250+ 377.33 грн
500+ 343.03 грн
1000+ 303.67 грн
FCP260N65S3 FCP260N65S3 onsemi fcp260n65s3-d.pdf Description: MOSFET N-CH 650V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
товар відсутній
FCPF600N60ZL1 FCPF600N60ZL1 onsemi fcpf600n60zl1-d.pdf Description: MOSFET N-CH 650V 7.4A TO220F
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.7A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
товар відсутній
FGH40T65SQD_F155 FGH40T65SQD_F155 onsemi fgh40t65sqd-d.pdf Description: 650V FS4 TRENCH IGBT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31.8 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16.4ns/86.4ns
Switching Energy: 138µJ (on), 52µJ (off)
Test Condition: 400V, 10A, 6Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 238 W
товар відсутній
FQP13N50C_F105 FQP13N50C_FQPF13N50C_RevC0_9-8-17.pdf
FQP13N50C_F105
Виробник: onsemi
Description: MOSFET N-CH 500V 13A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.5A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товар відсутній
FQPF10N60C_F105 FQP10N60C_FQPF10N60C_RevC1_9-8-17.pdf
FQPF10N60C_F105
Виробник: onsemi
Description: MOSFET N-CH 600V 9.5A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.75A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
товар відсутній
FQPF13N50C_F105 FQP13N50C_FQPF13N50C_RevC0_9-8-17.pdf
FQPF13N50C_F105
Виробник: onsemi
Description: MOSFET N-CH 500V 13A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.5A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товар відсутній
FSA9280AUMX_F065
Виробник: onsemi
Description: IC POWER MANAGEMENT
Features: I²C, USB 2.0
Packaging: Bulk
Package / Case: 20-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio, UART, USB
On-State Resistance (Max): 3Ohm (Audio), 10Ohm (USB)
Supplier Device Package: 20-UMLP (4x3)
Voltage - Supply, Single (V+): 3V ~ 4.4V
Multiplexer/Demultiplexer Circuit: 3:1
Part Status: Obsolete
Number of Channels: 1
товар відсутній
MBR0520L_G
MBR0520L_G
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 500MA SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
товар відсутній
MMBF5485_NB50012
MMBF5485_NB50012
Виробник: onsemi
Description: IC POWER MANAGEMENT
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 10mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 4dB
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Voltage - Rated: 25 V
Voltage - Test: 15 V
товар відсутній
PZT3904_F081
PZT3904_F081
Виробник: onsemi
Description: TRANS NPN 40V 0.2A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
товар відсутній
5185_2N4391
Виробник: onsemi
Description: JFET N-CH
Packaging: Bulk
Part Status: Obsolete
товар відсутній
FAN6754MLMY_F116
Виробник: onsemi
Description: IC OFFLINE SWITCH
Packaging: Bulk
Part Status: Obsolete
товар відсутній
FCP20N60_G
FCP20N60_G
Виробник: onsemi
Description: MOSFET N-CH 600V 20A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
товар відсутній
FCPF11N60_G
FCPF11N60_G
Виробник: onsemi
Description: MOSFET N-CH 600V 11A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
товар відсутній
FCPF11N65_G
Виробник: onsemi
Description: INTEGRATED CIRCUIT
Packaging: Bulk
Part Status: Obsolete
товар відсутній
FDB3632_SB82115
FDB3632_SB82115
Виробник: onsemi
Description: MOSFET N-CH 100V 12A/80A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
товар відсутній
FDD24AN06LA0_SB82179
FDD24AN06LA0_SB82179
Виробник: onsemi
Description: MOSFET N-CH 60V 7.1A/40A TO252AA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
товар відсутній
FDLL4148_NBD3001
Виробник: onsemi
Description: DIODE GEN PURP 100V 200MA SOD80
Packaging: Bulk
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
товар відсутній
FDN338P_G
FDN338P_G
Виробник: onsemi
Description: MOSFET P-CH 20V 1.6A SUPERSOT3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 451 pF @ 10 V
товар відсутній
FDN5618P_G
FDN5618P_G
Виробник: onsemi
Description: MOSFET P-CH 60V 1.25A SUPERSOT3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.25A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V
товар відсутній
FEBFAN6754AMR_CP450V1 FEBFAN6754AMR_CP450v1_Rev1.0.1_2011.pdf
Виробник: onsemi
Description: INTEGRATED CIRCUIT
Packaging: Bulk
Voltage - Output: 19V
Voltage - Input: 90 ~ 264 VAC
Current - Output: 3.42A
Frequency - Switching: 50Hz ~ 60Hz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: FAN6754AMR, FAN6204MY
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary and Secondary Side
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
товар відсутній
FGD3040G2_SN00297
FGD3040G2_SN00297
Виробник: onsemi
Description: INTEGRATED CIRCUIT
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: -/4.8µs
Test Condition: 300V, 6.5A, 1kOhm, 5V
Gate Charge: 21 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 150 W
товар відсутній
FGPF4536YDTU_SN00305
Виробник: onsemi
Description: INTEGRATED CIRCUIT
товар відсутній
FMS6143CSX_NA3M248
FMS6143CSX_NA3M248
Виробник: onsemi
Description: IC VIDEO FILTER 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 4.75V ~ 5.25V
Applications: Consumer Video
Standards: NTSC
Supplier Device Package: 8-SOIC
товар відсутній
FMS6501MSA28X_NA3L222
FMS6501MSA28X_NA3L222
Виробник: onsemi
Description: IC VIDEO SWITCH 12X9 28SSOP
Packaging: Bulk
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Function: Switch Matrix
Voltage - Supply: 3.13V ~ 5.25V
Applications: Consumer Video
Supplier Device Package: 28-SSOP
Part Status: Obsolete
Control Interface: I²C
товар відсутній
FQPF5N60C_F105
FQPF5N60C_F105
Виробник: onsemi
Description: MOSFET N-CH 600V 4.5A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
товар відсутній
FSA2567UMX_F113
FSA2567UMX_F113
Виробник: onsemi
Description: INTEGRATED CIRCUIT
Packaging: Bulk
Features: Break-Before-Make
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Telecommunications
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 475MHz
Supplier Device Package: 16-UMLP (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Switch Circuit: 4PDT
Part Status: Obsolete
Number of Channels: 1
товар відсутній
FSL136MRG fsl136mr-d.pdf
FSL136MRG
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C (TA)
Duty Cycle: 77%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 26V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 26 W
товар відсутній
FSL136MRS fsl136mr-d.pdf
FSL136MRS
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C (TA)
Duty Cycle: 77%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 26V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 26 W
товар відсутній
ISL9V5036S3ST_SB82026C
ISL9V5036S3ST_SB82026C
Виробник: onsemi
Description: INTEGRATED CIRCUIT
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: -/10.8µs
Test Condition: 300V, 1kOhm, 5V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 46 A
Voltage - Collector Emitter Breakdown (Max): 390 V
Power - Max: 250 W
товар відсутній
LM317MDTX_G
LM317MDTX_G
Виробник: onsemi
Description: IC REG LINEAR POS ADJ 500MA DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: D-Pak
Voltage - Output (Max): 37V
Voltage - Output (Min/Fixed): 1.2V
Part Status: Obsolete
PSRR: 80dB (120Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
товар відсутній
LTA703S
Виробник: onsemi
Description: INTEGRATED CIRCUIT
товар відсутній
MMBFJ177_G
MMBFJ177_G
Виробник: onsemi
Description: JFET P-CH 30V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
товар відсутній
MMBFJ201_G
MMBFJ201_G
Виробник: onsemi
Description: JFET N-CH 40V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 20 V
товар відсутній
MMBT3906_F080
MMBT3906_F080
Виробник: onsemi
Description: INTEGRATED CIRCUIT
товар відсутній
MMSD4148_G
MMSD4148_G
Виробник: onsemi
Description: DIODE GEN PURP 100V 200MA SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
товар відсутній
NC7SZ04M5X_F40
NC7SZ04M5X_F40
Виробник: onsemi
Description: IC INVERTER 1CH 1-INP SOT23-5
товар відсутній
NC7SZ32M5X_F40
NC7SZ32M5X_F40
Виробник: onsemi
Description: IC GATE OR 1CH 2-INP SOT23-5
товар відсутній
NDS9407_G
NDS9407_G
Виробник: onsemi
Description: MOSFET P-CH 60V 3A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 732 pF @ 30 V
товар відсутній
SG6859DTY SG6859D_Rev1.0.0_Feb2009.pdf
Виробник: onsemi
Description: INTEGRATED CIRCUIT
Packaging: Bulk
Package / Case: SOT-23-6
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Frequency - Switching: 65kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9.5V ~ 22V
Supplier Device Package: SOT-26
Control Features: Current Limit, Frequency Control
Output Phases: 1
Duty Cycle (Max): 75%
Clock Sync: Yes
Part Status: Obsolete
Number of Outputs: 1
товар відсутній
FCU360N65S3R0 fcu360n65s3r0-d.pdf
FCU360N65S3R0
Виробник: onsemi
Description: MOSFET N-CH 600V IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Supplier Device Package: IPAK
Part Status: Not For New Designs
на замовлення 1535 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+155.3 грн
75+ 119.95 грн
150+ 98.69 грн
525+ 78.37 грн
1050+ 66.49 грн
Мінімальне замовлення: 2
KA431LZTA_F081
Виробник: onsemi
Description: IC VREF SHUNT ADJ TO92-3
Packaging: Tape & Box (TB)
Part Status: Obsolete
товар відсутній
FDB075N15A_SN00284
FDB075N15A_SN00284
Виробник: onsemi
Description: MOSFET N-CH 150V 130A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 75 V
товар відсутній
FDD9407_SN00283
FDD9407_SN00283
Виробник: onsemi
Description: MOSFET N-CH 40V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6390 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
FDN339AN_G
FDN339AN_G
Виробник: onsemi
Description: MOSFET N-CH 20V 3A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V
товар відсутній
FDS5672_F095
FDS5672_F095
Виробник: onsemi
Description: MOSFET N-CH 60V 12A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
товар відсутній
FDS6690A_NBBM015A
FDS6690A_NBBM015A
Виробник: onsemi
Description: MOSFET N-CH 30V 11A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 15 V
товар відсутній
FDS8984_F123
Виробник: onsemi
Description: MOSFET 2N-CH 30V 8-SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товар відсутній
FQD12N20LTM_SN00173
FQD12N20LTM_SN00173
Виробник: onsemi
Description: MOSFET N-CH 200V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
товар відсутній
PCFG40N120ANF
Виробник: onsemi
Description: MOSFET N-CH
Packaging: Tape & Reel (TR)
товар відсутній
2N7000BU_T
2N7000BU_T
Виробник: onsemi
Description: MOSFET N-CH 60V 200MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
товар відсутній
KA78R12CPWD
Виробник: onsemi
Description: IC REG LINEAR 12V 1A
Packaging: Bulk
Output Type: Fixed
Current - Output: 1A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Voltage - Output (Min/Fixed): 12V
Control Features: Enable
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 1A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
товар відсутній
MJD31CETF
Виробник: onsemi
Description: TRANS NPN
Packaging: Bulk
Part Status: Obsolete
товар відсутній
TIP31ATU_F129
TIP31ATU_F129
Виробник: onsemi
Description: TRANS NPN 60V 3A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
товар відсутній
TIP32CPWD
Виробник: onsemi
Description: TRANS PNP 100V
Packaging: Bulk
Part Status: Obsolete
товар відсутній
BDW93CPWD
Виробник: onsemi
Description: TRANS NPN 100V TO220
Packaging: Tube
Part Status: Obsolete
товар відсутній
FAN7085MX_SN00036
Виробник: onsemi
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tube
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
FAN7631SJX_G
Виробник: onsemi
Description: IC CTLR PFM RESON CONV 16SOIC
Packaging: Tube
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
PCFG40N120ANW
Виробник: onsemi
Description: IGBT NPT 1200V
Packaging: Tube
товар відсутній
NCH-RSL10-101WC51-ABG rsl10-d.pdf
NCH-RSL10-101WC51-ABG
Виробник: onsemi
Description: IC RF TXRX+MCU BLE 51WLCSP
Packaging: Cut Tape (CT)
Package / Case: 51-XFBGA, WLCSP
Sensitivity: -94dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 6dBm
Protocol: Bluetooth v5.0
Current - Receiving: 3mA ~ 6.2mA
Data Rate (Max): 2Mbps
Current - Transmitting: 12mA ~ 25mA
Supplier Device Package: 51-WLCSP (2.33x2.36)
Modulation: FSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
на замовлення 4385 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+607.62 грн
10+ 536.11 грн
25+ 487.37 грн
100+ 411.64 грн
250+ 377.33 грн
500+ 343.03 грн
1000+ 303.67 грн
FCP260N65S3 fcp260n65s3-d.pdf
FCP260N65S3
Виробник: onsemi
Description: MOSFET N-CH 650V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
товар відсутній
FCPF600N60ZL1 fcpf600n60zl1-d.pdf
FCPF600N60ZL1
Виробник: onsemi
Description: MOSFET N-CH 650V 7.4A TO220F
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.7A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
товар відсутній
FGH40T65SQD_F155 fgh40t65sqd-d.pdf
FGH40T65SQD_F155
Виробник: onsemi
Description: 650V FS4 TRENCH IGBT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31.8 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16.4ns/86.4ns
Switching Energy: 138µJ (on), 52µJ (off)
Test Condition: 400V, 10A, 6Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 238 W
товар відсутній
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