| Фото | Назва | Виробник | Інформація |
Доступність |
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AP0200AT2L00XEGA0-DR | onsemi |
 Description: IC VID IMAGE SGNL PROC 100VFBGAPackaging: Tray Package / Case: 100-VFBGA Mounting Type: Surface Mount Function: Processor Applications: Professional Video Supplier Device Package: 100-VFBGA (7x7) |
на замовлення 2589 шт: термін постачання 21-31 дні (днів) |
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AP0201AT2L00XEGA0-DR | onsemi |
Description: IC VID IMAGE SGNL PROC 100VFBGA Packaging: Tray Package / Case: 100-VFBGA Mounting Type: Surface Mount Function: Processor Applications: Professional Video Supplier Device Package: 100-VFBGA (7x7) |
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AR0130CSSC00SPBA0-DP1 | onsemi |
Description: IMAGE SENSOR 1.2MP 1/3 CIS Packaging: Tray Package / Case: 48-LCC Type: CMOS Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 48-PLCC (11.43x11.43) Frames per Second: 45 |
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AR0132AT6C00XPEA0-DRBR1 | onsemi |
Description: IMAGE SENSOR 1.2MP 1/3 CIS Packaging: Tray Package / Case: 63-LBGA Type: CMOS Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.8V ~ 2.8V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Frames per Second: 45 |
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AR0132AT6M00XPEA0-DRBR1 | onsemi |
Description: IMAGE SENSOR 1.2MP 1/3 CIS Packaging: Tray Package / Case: 63-LBGA Type: CMOS Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.8V ~ 2.8V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Frames per Second: 45 |
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AR0134CSSC00SUEA0-DPBR1 | onsemi |
Description: IMAGE SENSOR 1.2MP 1/3 GS CIS Packaging: Tray Package / Case: 63-LBGA Type: CMOS Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.8V ~ 2.8V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Part Status: Obsolete Frames per Second: 54 |
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| AR0134CSSM00SPCA0-DPBR1 | onsemi |
Description: IMAGE SENSOR 1.2MP 1/3 GS CIS Packaging: Tray Package / Case: 48-SMD Module Type: CMOS Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.8V ~ 2.8V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 48-iLCC Part Status: Obsolete Frames per Second: 54.0 |
на замовлення 224 шт: термін постачання 21-31 дні (днів) |
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AR0134CSSM00SUEA0-DPBR1 | onsemi |
Description: IMAGE SENSOR 1.2MP 1/3 GS CIS Packaging: Tray Package / Case: 63-LBGA Type: CMOS Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.8V ~ 2.8V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Part Status: Obsolete Frames per Second: 54 |
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AR0134CSSM25SUEA0-DRBR1 | onsemi |
Description: IMAGE SENSOR 1.2MP 1/3 GS CIS Packaging: Tray Package / Case: 63-LBGA Type: CMOS Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.8V ~ 2.8V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Part Status: Obsolete Frames per Second: 54 |
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| AR0230ATSC12XUEA0-DRBR | onsemi |
Description: IMAGE SENSOR 2MP 1/3 CIS Packaging: Tray Package / Case: 80-LBGA Supplier Device Package: 80-IBGA (10x10) Part Status: Obsolete |
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AR0238CSSC12SHRA0-DR | onsemi |
Description: IMAGE SENSOR 2MP 1/3 CIS SO Packaging: Tray Package / Case: 48-PLCC Type: CMOS Operating Temperature: -30°C ~ 85°C Voltage - Supply: 1.8V, 2.8V Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1080V Supplier Device Package: 48-PLCC (11.43x11.43) Frames per Second: 60.0 |
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AR1335CSSC11SMKA0-CR | onsemi |
Description: IMAGE SENSOR 13MP 1/3 CIS SO Packaging: Tray Package / Case: 63-WFBGA, CSPBGA Type: CMOS Voltage - Supply: 1.8V, 2.8V Pixel Size: 1.1µm x 1.1µm Active Pixel Array: 4208H x 3120V Supplier Device Package: 63-ODCSP (6.29x5.69) Frames per Second: 30 |
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ASX340AT2C00XPED0-DPBR1 | onsemi |
Description: SENSOR IMAGE MONO CMOS 48-ILCC Packaging: Tray Package / Case: 63-LFBGA Type: CMOS Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.8V, 2.8V Pixel Size: 5.6µm x 5.6µm Active Pixel Array: 720H x 560V Supplier Device Package: 63-IBGA (7.5x7.5) Frames per Second: 60.0 |
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ASX340AT2C00XPED0-DRBR1 | onsemi |
Description: SENSOR IMAGE MONO CMOS 48-ILCC Packaging: Tray Package / Case: 63-LFBGA Type: CMOS Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.8V, 2.8V Pixel Size: 5.6µm x 5.6µm Active Pixel Array: 720H x 560V Supplier Device Package: 63-IBGA (7.5x7.5) Frames per Second: 60.0 |
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| MT9V034C12STC-DP1 | onsemi |
Description: SENSOR IMAGE VGA 1/3 CMOS 48CLCC Packaging: Tray Type: CMOS Operating Temperature: -30°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Pixel Size: 6µm x 6µm Active Pixel Array: 752H x 480V Frames per Second: 60.0 |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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MT9V034C12STM-DP1 | onsemi |
Description: SENSOR IMAGE VGA 1/3 CMOS 48CLCC Packaging: Tray Package / Case: 48-CLCC Type: CMOS Operating Temperature: -30°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Pixel Size: 6µm x 6µm Active Pixel Array: 752H x 480V Supplier Device Package: 48-CLCC (11.43x11.43) Frames per Second: 60.0 |
на замовлення 31 шт: термін постачання 21-31 дні (днів) |
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| MT9V138C12STC-DP1 | onsemi |
Description: SOC SENSOR IMAGE VGA 1/4 48CLCC Packaging: Tray |
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NOIP1FN2000A-LTI | onsemi |
Description: IC IMAGE SENSOR CMOS 128LBGA Packaging: Tray Type: CMOS with Processor Operating Temperature: -40°C ~ 85°C (TJ) Voltage - Supply: 1.8V ~ 3.3V Pixel Size: 4.5µm x 4.5µm Active Pixel Array: 1920H x 1200V Part Status: Obsolete Frames per Second: 230 |
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| NOIP3SE1300A-QDI | onsemi |
Description: IC IMAGE SENSOR CMOS 48LCC Packaging: Tray Type: CMOS Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 3.3V Pixel Size: 4.8µm x 4.8µm Active Pixel Array: 1280H x 1024V Frames per Second: 50 |
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NOIP3SN5000A-QTI | onsemi |
Description: IC IMAGE SENSOR CMOS 84LCC Packaging: Tray Type: CMOS Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 3.3V Pixel Size: 4.8µm x 4.8µm Active Pixel Array: 2592H x 2048V Part Status: Active Frames per Second: 100 |
на замовлення 42 шт: термін постачання 21-31 дні (днів) |
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LV56851UV-XH | onsemi |
Description: IC REG AUTO APPL 5OUT 15HZIP Packaging: Tube Package / Case: 15-SSIP Exposed Pad, Formed Leads Voltage - Output: Multiple Mounting Type: Through Hole Number of Outputs: 5 Voltage - Input: 7V ~ 36V Operating Temperature: -40°C ~ 85°C (TA) Applications: Power Supply, Automotive Applications Supplier Device Package: 15-HZIP Part Status: Obsolete |
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NGTB25N120FL2WAG | onsemi |
Description: IGBT FIELD STOP 1.2KV TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 136 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Supplier Device Package: TO-247-4L IGBT Type: Field Stop Td (on/off) @ 25°C: 17ns/113ns Switching Energy: 990µJ (on), 660µJ (off) Test Condition: 600V, 50A, 10Ohm, 15V Gate Charge: 181 nC Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 385 W |
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NGTB40N120FL2WAG | onsemi |
Description: IGBT FIELD STOP 1200V 160A TO247 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 240 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247-4L IGBT Type: Field Stop Td (on/off) @ 25°C: 30ns/145ns Switching Energy: 1.7mJ (on), 1.1mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 313 nC Part Status: Obsolete Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 536 W |
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NGTB50N65FL2WAG | onsemi |
Description: IGBT FIELD STOP 650V 160A TO247 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 94 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Supplier Device Package: TO-247-4L IGBT Type: Field Stop Td (on/off) @ 25°C: 23ns/123ns Switching Energy: 420µJ (on), 550µJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 215 nC Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 417 W |
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NGTB75N65FL2WAG | onsemi |
Description: IGBT FIELD STOP 650V 200A TO247 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Supplier Device Package: TO-247-4L IGBT Type: Field Stop Td (on/off) @ 25°C: 23ns/157ns Switching Energy: 610µJ (on), 1.2mJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 310 nC Part Status: Obsolete Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 536 W |
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| STK5Q4U363J-E | onsemi |
Description: MOD IPM 600V 10A SIP Packaging: Tube Package / Case: 38-PowerDIP Module (1.165", 29.60mm), 23 Leads Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2000Vrms Part Status: Not For New Designs Current: 10 A Voltage: 600 V |
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2SK4066-DL-1EX | onsemi |
Description: MOSFET N-CH 60V 100A TO263-2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V Power Dissipation (Max): 1.65W (Ta), 90W (Tc) Supplier Device Package: TO-263-2 Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V |
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NCV8402AMNT2G | onsemi |
Description: IC PWR DRIVER N-CHAN 1:1 6DFN Packaging: Tape & Reel (TR) Features: Auto Restart Package / Case: 6-VDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 165mOhm Input Type: Non-Inverting Voltage - Load: 42V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: 6-DFN (3x3.3) Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Obsolete |
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CAT1163WI-45-G | onsemi |
Description: IC SUPERVISOR 1 CHANNEL 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Simple Reset/Power-On Reset Reset: Active High/Active Low Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 130ms Minimum Voltage - Threshold: 4.5V Supplier Device Package: 8-SOIC Part Status: Obsolete DigiKey Programmable: Not Verified |
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FAM65V05DF1 | onsemi |
Description: AUTO PWR MODUL 650V 50A 27PWRDIP Packaging: Tube Package / Case: 27-PowerDIP Module (0.300", 7.62mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2500Vrms Part Status: Active Current: 50 A Voltage: 650 V |
на замовлення 45 шт: термін постачання 21-31 дні (днів) |
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FAN3224TUMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 9.5V ~ 18V Input Type: Non-Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 12ns, 9ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 5A, 5A Part Status: Active DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
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FAN53526UC00X | onsemi |
Description: IC REG BUCK PROG 3A 15WLCSP Packaging: Tape & Reel (TR) Package / Case: 15-UFBGA, WLCSP Output Type: Programmable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 3A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 2.4MHz Voltage - Input (Max): 5.5V Topology: Buck Supplier Device Package: 15-WLCSP (2.02x1.31) Synchronous Rectifier: Yes Voltage - Output (Max): 0.6V Voltage - Input (Min): 2.5V Voltage - Output (Min/Fixed): 0.6V Part Status: Active |
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FAN53526UC89X | onsemi |
Description: IC REG BUCK PROG 3A 15WLCSP Packaging: Tape & Reel (TR) Package / Case: 15-UFBGA, WLCSP Output Type: Programmable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 3A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 2.4MHz Voltage - Input (Max): 5.5V Topology: Buck Supplier Device Package: 15-WLCSP (2.02x1.31) Synchronous Rectifier: Yes Voltage - Output (Max): 1.15V Voltage - Input (Min): 2.5V Voltage - Output (Min/Fixed): 1.15V Part Status: Active |
на замовлення 312000 шт: термін постачання 21-31 дні (днів) |
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FAN54511APUCX | onsemi |
Description: IC BATT CHG LI-ION 1CELL 63WLCSP Packaging: Tape & Reel (TR) Package / Case: 63-UFBGA, WLCSP Number of Cells: 1 Mounting Type: Surface Mount Interface: I2C, USB Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: 63-WLCSP Charge Current - Max: 3.2A Programmable Features: Timer Fault Protection: Over Temperature Voltage - Supply (Max): 13.25V Current - Charging: Constant - Programmable Part Status: Not For New Designs |
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FAN602FMX | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 10SOIC Packaging: Tape & Reel (TR) Package / Case: 10-SOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Frequency - Switching: 75kHz ~ 140kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 5.5V ~ 25V Supplier Device Package: 10-SOIC Fault Protection: Over Temperature, Over Voltage Voltage - Start Up: 17.2 V Part Status: Obsolete |
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FAN602LMX | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 10SOIC Packaging: Tape & Reel (TR) Package / Case: 10-SOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Frequency - Switching: 60kHz ~ 140kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 5.5V ~ 25V Supplier Device Package: 10-SOIC Fault Protection: Over Temperature, Over Voltage Voltage - Start Up: 17.2 V Part Status: Obsolete |
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FAN602MX | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 10SOIC Packaging: Tape & Reel (TR) Package / Case: 10-SOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Frequency - Switching: 60kHz ~ 140kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 5.5V ~ 25V Supplier Device Package: 10-SOIC Fault Protection: Over Temperature, Over Voltage Voltage - Start Up: 17.2 V Part Status: Obsolete |
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FAN6204AMX | onsemi |
Description: SR CONTROLLER IC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Voltage - Supply: 4.5V ~ 28.5V Applications: Secondary-Side Controller, Synchronous Rectifier Supplier Device Package: 8-SOIC Part Status: Last Time Buy Current - Supply: 7 mA DigiKey Programmable: Not Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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FAN7380MX-OP | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 230ns, 90ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 90mA, 180mA Part Status: Last Time Buy DigiKey Programmable: Not Verified |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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FCP11N60N-F102 | onsemi |
Description: MOSFET N-CH 600V 10.8A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 5.4A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 100 V |
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FCP16N60N-F102 | onsemi |
Description: MOSFET N-CH 600V 16A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 199mOhm @ 8A, 10V Power Dissipation (Max): 134.4W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 52.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 100 V |
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FCP22N60N-F102 | onsemi |
Description: MOSFET N-CH 600V 22A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±45V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V |
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FCPF150N65F | onsemi |
Description: MOSFET N-CH 650V 14.9A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.4mA Supplier Device Package: TO-220F-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3737 pF @ 100 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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FDC30N20DZ | onsemi |
Description: MOSFET N-CH 30V 4.6A SUPERSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V Power Dissipation (Max): 960mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 15 V |
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.JPG "FDMC007N30D") |
FDMC007N30D | onsemi |
Description: MOSFET 2N-CH 30V 46A 8PWR33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W, 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 46A Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V, 2360pF @ 15V Rds On (Max) @ Id, Vgs: 11.6mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-Power33 (3x3) Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDMC2D8N025S | onsemi |
Description: MOSFET N-CH 25V 124A POWER33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 28A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: Power33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 13 V |
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FDMC8010DC | onsemi |
Description: MOSFET N-CH 30V 37A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Ta) Rds On (Max) @ Id, Vgs: 1.28mOhm @ 37A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 7080 pF @ 15 V |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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FDMC86183 | onsemi |
Description: MOSFET N-CH 100V 47A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 12.8mOhm @ 16A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 50 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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.jpg "FDMD8680") |
FDMD8680 | onsemi |
Description: MOSFET 2 N-CH 80V 66A 8-PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 39W Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 40V Rds On (Max) @ Id, Vgs: 4.7mOhm @ 16A, 10V Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Power 5x6 Part Status: Active |
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FDMF2011 | onsemi |
Description: MCM FAN7842 DRIVER AND MV5 100V |
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FDMF4061 | onsemi |
Description: MCM FAN7842 DRIVER AND MV7 60 FE |
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FDMQ8205A | onsemi |
Description: GREENBRIDGETM 2 SERIES OF HIGH-E Packaging: Tape & Reel (TR) Package / Case: 12-WDFN Exposed Pad Mounting Type: Surface Mount Type: Bridge Rectifier Operating Temperature: -40°C ~ 85°C Voltage - Supply: 57V (Max) Applications: Power Over Ethernet (PoE) Internal Switch(s): Yes FET Type: N and P-Channel Ratio - Input:Output: Bridge (2) Supplier Device Package: 12-MLP (5x4.5) Part Status: Active Current - Supply: 400 µA |
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| FDMS2D4N03S | onsemi |
Description: MOSFET N-CH 30V 163A 8PQFN |
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FDMS8050 | onsemi |
Description: MOSFET N-CHANNEL 30V 55A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 3V @ 750µA Supplier Device Package: 8-PQFN (5x6) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDP032N08-F102 | onsemi |
Description: MOSFET N-CHANNEL 75V 120A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15160 pF @ 25 V |
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FDP038AN06A0-F102 | onsemi |
Description: MOSFET N-CH 60V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V |
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FDP047N08-F102 | onsemi |
Description: MOSFET N-CH 75V 164A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 164A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V Power Dissipation (Max): 268W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 25 V |
на замовлення 3196 шт: термін постачання 21-31 дні (днів) |
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| FDPC3D5N025X9D | onsemi |
Description: MOSFET 2N-CH 25V 74A 12QFN Packaging: Tape & Reel (TR) Package / Case: 12-PowerWQFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 26W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 74A Input Capacitance (Ciss) (Max) @ Vds: 3340pF @ 13V Rds On (Max) @ Id, Vgs: 3.01mOhm @ 18A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 12-PQFN (3.3x3.3) Part Status: Obsolete |
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FDPF33N25TRDTU | onsemi |
Description: MOSFET N-CHANNEL 250V TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F (LG-Formed) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V |
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FDPF39N20TLDTU | onsemi |
Description: MOSFET N-CH 200V 39A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 19.5A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 25 V |
товар відсутній |
| AP0200AT2L00XEGA0-DR |
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Виробник: onsemi
Description: IC VID IMAGE SGNL PROC 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Function: Processor
Applications: Professional Video
Supplier Device Package: 100-VFBGA (7x7)
Description: IC VID IMAGE SGNL PROC 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Function: Processor
Applications: Professional Video
Supplier Device Package: 100-VFBGA (7x7)
на замовлення 2589 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1513.02 грн |
| 10+ | 1153.32 грн |
| 25+ | 1092.64 грн |
| 80+ | 882.98 грн |
| 440+ | 826.01 грн |
| AP0201AT2L00XEGA0-DR |
|
Виробник: onsemi
Description: IC VID IMAGE SGNL PROC 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Function: Processor
Applications: Professional Video
Supplier Device Package: 100-VFBGA (7x7)
Description: IC VID IMAGE SGNL PROC 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Function: Processor
Applications: Professional Video
Supplier Device Package: 100-VFBGA (7x7)
товар відсутній
| AR0130CSSC00SPBA0-DP1 |
|
Виробник: onsemi
Description: IMAGE SENSOR 1.2MP 1/3 CIS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-PLCC (11.43x11.43)
Frames per Second: 45
Description: IMAGE SENSOR 1.2MP 1/3 CIS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-PLCC (11.43x11.43)
Frames per Second: 45
товар відсутній
| AR0132AT6C00XPEA0-DRBR1 |
Виробник: onsemi
Description: IMAGE SENSOR 1.2MP 1/3 CIS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 45
Description: IMAGE SENSOR 1.2MP 1/3 CIS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 45
товар відсутній
| AR0132AT6M00XPEA0-DRBR1 |
Виробник: onsemi
Description: IMAGE SENSOR 1.2MP 1/3 CIS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 45
Description: IMAGE SENSOR 1.2MP 1/3 CIS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 45
товар відсутній
| AR0134CSSC00SUEA0-DPBR1 |
|
Виробник: onsemi
Description: IMAGE SENSOR 1.2MP 1/3 GS CIS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 54
Description: IMAGE SENSOR 1.2MP 1/3 GS CIS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 54
товар відсутній
| AR0134CSSM00SPCA0-DPBR1 |
|
Виробник: onsemi
Description: IMAGE SENSOR 1.2MP 1/3 GS CIS
Packaging: Tray
Package / Case: 48-SMD Module
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-iLCC
Part Status: Obsolete
Frames per Second: 54.0
Description: IMAGE SENSOR 1.2MP 1/3 GS CIS
Packaging: Tray
Package / Case: 48-SMD Module
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-iLCC
Part Status: Obsolete
Frames per Second: 54.0
на замовлення 224 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2633.28 грн |
| 10+ | 2113.32 грн |
| 25+ | 1871.82 грн |
| AR0134CSSM00SUEA0-DPBR1 |
|
Виробник: onsemi
Description: IMAGE SENSOR 1.2MP 1/3 GS CIS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 54
Description: IMAGE SENSOR 1.2MP 1/3 GS CIS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 54
товар відсутній
| AR0134CSSM25SUEA0-DRBR1 |
|
Виробник: onsemi
Description: IMAGE SENSOR 1.2MP 1/3 GS CIS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 54
Description: IMAGE SENSOR 1.2MP 1/3 GS CIS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 54
товар відсутній
| AR0230ATSC12XUEA0-DRBR |
Виробник: onsemi
Description: IMAGE SENSOR 2MP 1/3 CIS
Packaging: Tray
Package / Case: 80-LBGA
Supplier Device Package: 80-IBGA (10x10)
Part Status: Obsolete
Description: IMAGE SENSOR 2MP 1/3 CIS
Packaging: Tray
Package / Case: 80-LBGA
Supplier Device Package: 80-IBGA (10x10)
Part Status: Obsolete
товар відсутній
| AR0238CSSC12SHRA0-DR |
|
Виробник: onsemi
Description: IMAGE SENSOR 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 48-PLCC
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1080V
Supplier Device Package: 48-PLCC (11.43x11.43)
Frames per Second: 60.0
Description: IMAGE SENSOR 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 48-PLCC
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1080V
Supplier Device Package: 48-PLCC (11.43x11.43)
Frames per Second: 60.0
товар відсутній
| AR1335CSSC11SMKA0-CR |
|
Виробник: onsemi
Description: IMAGE SENSOR 13MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-WFBGA, CSPBGA
Type: CMOS
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 1.1µm x 1.1µm
Active Pixel Array: 4208H x 3120V
Supplier Device Package: 63-ODCSP (6.29x5.69)
Frames per Second: 30
Description: IMAGE SENSOR 13MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-WFBGA, CSPBGA
Type: CMOS
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 1.1µm x 1.1µm
Active Pixel Array: 4208H x 3120V
Supplier Device Package: 63-ODCSP (6.29x5.69)
Frames per Second: 30
товар відсутній
| ASX340AT2C00XPED0-DPBR1 |
|
Виробник: onsemi
Description: SENSOR IMAGE MONO CMOS 48-ILCC
Packaging: Tray
Package / Case: 63-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 720H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
Description: SENSOR IMAGE MONO CMOS 48-ILCC
Packaging: Tray
Package / Case: 63-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 720H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
товар відсутній
| ASX340AT2C00XPED0-DRBR1 |
|
Виробник: onsemi
Description: SENSOR IMAGE MONO CMOS 48-ILCC
Packaging: Tray
Package / Case: 63-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 720H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
Description: SENSOR IMAGE MONO CMOS 48-ILCC
Packaging: Tray
Package / Case: 63-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 720H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
товар відсутній
| MT9V034C12STC-DP1 |
|
Виробник: onsemi
Description: SENSOR IMAGE VGA 1/3 CMOS 48CLCC
Packaging: Tray
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Frames per Second: 60.0
Description: SENSOR IMAGE VGA 1/3 CMOS 48CLCC
Packaging: Tray
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Frames per Second: 60.0
на замовлення 7 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1715.06 грн |
| MT9V034C12STM-DP1 |
|
Виробник: onsemi
Description: SENSOR IMAGE VGA 1/3 CMOS 48CLCC
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
Description: SENSOR IMAGE VGA 1/3 CMOS 48CLCC
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
на замовлення 31 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1715.06 грн |
| 10+ | 1376.19 грн |
| 25+ | 1218.96 грн |
| MT9V138C12STC-DP1 |
товар відсутній
| NOIP1FN2000A-LTI |
|
Виробник: onsemi
Description: IC IMAGE SENSOR CMOS 128LBGA
Packaging: Tray
Type: CMOS with Processor
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.5µm x 4.5µm
Active Pixel Array: 1920H x 1200V
Part Status: Obsolete
Frames per Second: 230
Description: IC IMAGE SENSOR CMOS 128LBGA
Packaging: Tray
Type: CMOS with Processor
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.5µm x 4.5µm
Active Pixel Array: 1920H x 1200V
Part Status: Obsolete
Frames per Second: 230
товар відсутній
| NOIP3SE1300A-QDI |
|
Виробник: onsemi
Description: IC IMAGE SENSOR CMOS 48LCC
Packaging: Tray
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 1280H x 1024V
Frames per Second: 50
Description: IC IMAGE SENSOR CMOS 48LCC
Packaging: Tray
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 1280H x 1024V
Frames per Second: 50
товар відсутній
| NOIP3SN5000A-QTI |
|
Виробник: onsemi
Description: IC IMAGE SENSOR CMOS 84LCC
Packaging: Tray
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 2592H x 2048V
Part Status: Active
Frames per Second: 100
Description: IC IMAGE SENSOR CMOS 84LCC
Packaging: Tray
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 2592H x 2048V
Part Status: Active
Frames per Second: 100
на замовлення 42 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 14683.92 грн |
| 10+ | 13999.97 грн |
| LV56851UV-XH |
Виробник: onsemi
Description: IC REG AUTO APPL 5OUT 15HZIP
Packaging: Tube
Package / Case: 15-SSIP Exposed Pad, Formed Leads
Voltage - Output: Multiple
Mounting Type: Through Hole
Number of Outputs: 5
Voltage - Input: 7V ~ 36V
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Power Supply, Automotive Applications
Supplier Device Package: 15-HZIP
Part Status: Obsolete
Description: IC REG AUTO APPL 5OUT 15HZIP
Packaging: Tube
Package / Case: 15-SSIP Exposed Pad, Formed Leads
Voltage - Output: Multiple
Mounting Type: Through Hole
Number of Outputs: 5
Voltage - Input: 7V ~ 36V
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Power Supply, Automotive Applications
Supplier Device Package: 15-HZIP
Part Status: Obsolete
товар відсутній
| NGTB25N120FL2WAG |
|
Виробник: onsemi
Description: IGBT FIELD STOP 1.2KV TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 136 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 17ns/113ns
Switching Energy: 990µJ (on), 660µJ (off)
Test Condition: 600V, 50A, 10Ohm, 15V
Gate Charge: 181 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 385 W
Description: IGBT FIELD STOP 1.2KV TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 136 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 17ns/113ns
Switching Energy: 990µJ (on), 660µJ (off)
Test Condition: 600V, 50A, 10Ohm, 15V
Gate Charge: 181 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 385 W
товар відсутній
| NGTB40N120FL2WAG |
|
Виробник: onsemi
Description: IGBT FIELD STOP 1200V 160A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 240 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 30ns/145ns
Switching Energy: 1.7mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 313 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 536 W
Description: IGBT FIELD STOP 1200V 160A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 240 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 30ns/145ns
Switching Energy: 1.7mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 313 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 536 W
товар відсутній
| NGTB50N65FL2WAG |
|
Виробник: onsemi
Description: IGBT FIELD STOP 650V 160A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 94 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 23ns/123ns
Switching Energy: 420µJ (on), 550µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 215 nC
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 417 W
Description: IGBT FIELD STOP 650V 160A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 94 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 23ns/123ns
Switching Energy: 420µJ (on), 550µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 215 nC
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 417 W
товар відсутній
| NGTB75N65FL2WAG |
|
Виробник: onsemi
Description: IGBT FIELD STOP 650V 200A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 23ns/157ns
Switching Energy: 610µJ (on), 1.2mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 536 W
Description: IGBT FIELD STOP 650V 200A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 23ns/157ns
Switching Energy: 610µJ (on), 1.2mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 536 W
товар відсутній
| STK5Q4U363J-E |
Виробник: onsemi
Description: MOD IPM 600V 10A SIP
Packaging: Tube
Package / Case: 38-PowerDIP Module (1.165", 29.60mm), 23 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Not For New Designs
Current: 10 A
Voltage: 600 V
Description: MOD IPM 600V 10A SIP
Packaging: Tube
Package / Case: 38-PowerDIP Module (1.165", 29.60mm), 23 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Not For New Designs
Current: 10 A
Voltage: 600 V
товар відсутній
| 2SK4066-DL-1EX |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 100A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: TO-263-2
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
Description: MOSFET N-CH 60V 100A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: TO-263-2
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
товар відсутній
| NCV8402AMNT2G |
|
Виробник: onsemi
Description: IC PWR DRIVER N-CHAN 1:1 6DFN
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: 6-VDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 165mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-DFN (3x3.3)
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Description: IC PWR DRIVER N-CHAN 1:1 6DFN
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: 6-VDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 165mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-DFN (3x3.3)
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
товар відсутній
| CAT1163WI-45-G |
|
Виробник: onsemi
Description: IC SUPERVISOR 1 CHANNEL 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 130ms Minimum
Voltage - Threshold: 4.5V
Supplier Device Package: 8-SOIC
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 130ms Minimum
Voltage - Threshold: 4.5V
Supplier Device Package: 8-SOIC
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
| FAM65V05DF1 |
|
Виробник: onsemi
Description: AUTO PWR MODUL 650V 50A 27PWRDIP
Packaging: Tube
Package / Case: 27-PowerDIP Module (0.300", 7.62mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Active
Current: 50 A
Voltage: 650 V
Description: AUTO PWR MODUL 650V 50A 27PWRDIP
Packaging: Tube
Package / Case: 27-PowerDIP Module (0.300", 7.62mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Active
Current: 50 A
Voltage: 650 V
на замовлення 45 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4060.36 грн |
| 10+ | 3647.69 грн |
| FAN3224TUMX-F085 |
|
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 9.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 9.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
| FAN53526UC00X |
|
Виробник: onsemi
Description: IC REG BUCK PROG 3A 15WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 15-UFBGA, WLCSP
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.4MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 15-WLCSP (2.02x1.31)
Synchronous Rectifier: Yes
Voltage - Output (Max): 0.6V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
Description: IC REG BUCK PROG 3A 15WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 15-UFBGA, WLCSP
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.4MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 15-WLCSP (2.02x1.31)
Synchronous Rectifier: Yes
Voltage - Output (Max): 0.6V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
товар відсутній
| FAN53526UC89X |
|
Виробник: onsemi
Description: IC REG BUCK PROG 3A 15WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 15-UFBGA, WLCSP
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.4MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 15-WLCSP (2.02x1.31)
Synchronous Rectifier: Yes
Voltage - Output (Max): 1.15V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1.15V
Part Status: Active
Description: IC REG BUCK PROG 3A 15WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 15-UFBGA, WLCSP
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.4MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 15-WLCSP (2.02x1.31)
Synchronous Rectifier: Yes
Voltage - Output (Max): 1.15V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1.15V
Part Status: Active
на замовлення 312000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 29.64 грн |
| 6000+ | 27.47 грн |
| 15000+ | 26.61 грн |
| FAN54511APUCX |
|
Виробник: onsemi
Description: IC BATT CHG LI-ION 1CELL 63WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 63-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Interface: I2C, USB
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 63-WLCSP
Charge Current - Max: 3.2A
Programmable Features: Timer
Fault Protection: Over Temperature
Voltage - Supply (Max): 13.25V
Current - Charging: Constant - Programmable
Part Status: Not For New Designs
Description: IC BATT CHG LI-ION 1CELL 63WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 63-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Interface: I2C, USB
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 63-WLCSP
Charge Current - Max: 3.2A
Programmable Features: Timer
Fault Protection: Over Temperature
Voltage - Supply (Max): 13.25V
Current - Charging: Constant - Programmable
Part Status: Not For New Designs
товар відсутній
| FAN602FMX |
|
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 10SOIC
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 75kHz ~ 140kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 5.5V ~ 25V
Supplier Device Package: 10-SOIC
Fault Protection: Over Temperature, Over Voltage
Voltage - Start Up: 17.2 V
Part Status: Obsolete
Description: IC OFFLINE SWITCH FLYBACK 10SOIC
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 75kHz ~ 140kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 5.5V ~ 25V
Supplier Device Package: 10-SOIC
Fault Protection: Over Temperature, Over Voltage
Voltage - Start Up: 17.2 V
Part Status: Obsolete
товар відсутній
| FAN602LMX |
|
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 10SOIC
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 60kHz ~ 140kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 5.5V ~ 25V
Supplier Device Package: 10-SOIC
Fault Protection: Over Temperature, Over Voltage
Voltage - Start Up: 17.2 V
Part Status: Obsolete
Description: IC OFFLINE SWITCH FLYBACK 10SOIC
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 60kHz ~ 140kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 5.5V ~ 25V
Supplier Device Package: 10-SOIC
Fault Protection: Over Temperature, Over Voltage
Voltage - Start Up: 17.2 V
Part Status: Obsolete
товар відсутній
| FAN602MX |
|
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 10SOIC
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 60kHz ~ 140kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 5.5V ~ 25V
Supplier Device Package: 10-SOIC
Fault Protection: Over Temperature, Over Voltage
Voltage - Start Up: 17.2 V
Part Status: Obsolete
Description: IC OFFLINE SWITCH FLYBACK 10SOIC
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 60kHz ~ 140kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 5.5V ~ 25V
Supplier Device Package: 10-SOIC
Fault Protection: Over Temperature, Over Voltage
Voltage - Start Up: 17.2 V
Part Status: Obsolete
товар відсутній
| FAN6204AMX |
|
Виробник: onsemi
Description: SR CONTROLLER IC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 28.5V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Current - Supply: 7 mA
DigiKey Programmable: Not Verified
Description: SR CONTROLLER IC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 28.5V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Current - Supply: 7 mA
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 32.38 грн |
| FAN7380MX-OP |
|
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 230ns, 90ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 90mA, 180mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 230ns, 90ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 90mA, 180mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 30.94 грн |
| 6000+ | 28.67 грн |
| 15000+ | 27.77 грн |
| FCP11N60N-F102 |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 10.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 5.4A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 100 V
Description: MOSFET N-CH 600V 10.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 5.4A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 100 V
товар відсутній
| FCP16N60N-F102 |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 16A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 8A, 10V
Power Dissipation (Max): 134.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 100 V
Description: MOSFET N-CH 600V 16A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 8A, 10V
Power Dissipation (Max): 134.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 100 V
товар відсутній
| FCP22N60N-F102 |
Виробник: onsemi
Description: MOSFET N-CH 600V 22A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±45V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
Description: MOSFET N-CH 600V 22A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±45V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
товар відсутній
| FCPF150N65F |
|
Виробник: onsemi
Description: MOSFET N-CH 650V 14.9A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.4mA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3737 pF @ 100 V
Description: MOSFET N-CH 650V 14.9A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.4mA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3737 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 265.36 грн |
| 50+ | 201.97 грн |
| 100+ | 173.12 грн |
| 500+ | 158.91 грн |
| FDC30N20DZ |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 4.6A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V
Power Dissipation (Max): 960mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 15 V
Description: MOSFET N-CH 30V 4.6A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V
Power Dissipation (Max): 960mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 15 V
товар відсутній
| FDMC007N30D |
|
Виробник: onsemi
Description: MOSFET 2N-CH 30V 46A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W, 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 46A
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V, 2360pF @ 15V
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
Description: MOSFET 2N-CH 30V 46A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W, 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 46A
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V, 2360pF @ 15V
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 26.53 грн |
| FDMC2D8N025S |
|
Виробник: onsemi
Description: MOSFET N-CH 25V 124A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 28A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 13 V
Description: MOSFET N-CH 25V 124A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 28A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 13 V
товар відсутній
| FDMC8010DC |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 37A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 37A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7080 pF @ 15 V
Description: MOSFET N-CH 30V 37A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 37A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7080 pF @ 15 V
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 36.25 грн |
| 6000+ | 33.24 грн |
| 9000+ | 31.71 грн |
| FDMC86183 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 47A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 16A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 50 V
Description: MOSFET N-CH 100V 47A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 16A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 50.98 грн |
| FDMD8680 |
|
Виробник: onsemi
Description: MOSFET 2 N-CH 80V 66A 8-PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 39W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 40V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Power 5x6
Part Status: Active
Description: MOSFET 2 N-CH 80V 66A 8-PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 39W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 40V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Power 5x6
Part Status: Active
товар відсутній
| FDMQ8205A |
|
Виробник: onsemi
Description: GREENBRIDGETM 2 SERIES OF HIGH-E
Packaging: Tape & Reel (TR)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Type: Bridge Rectifier
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 57V (Max)
Applications: Power Over Ethernet (PoE)
Internal Switch(s): Yes
FET Type: N and P-Channel
Ratio - Input:Output: Bridge (2)
Supplier Device Package: 12-MLP (5x4.5)
Part Status: Active
Current - Supply: 400 µA
Description: GREENBRIDGETM 2 SERIES OF HIGH-E
Packaging: Tape & Reel (TR)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Type: Bridge Rectifier
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 57V (Max)
Applications: Power Over Ethernet (PoE)
Internal Switch(s): Yes
FET Type: N and P-Channel
Ratio - Input:Output: Bridge (2)
Supplier Device Package: 12-MLP (5x4.5)
Part Status: Active
Current - Supply: 400 µA
товар відсутній
| FDMS8050 |
|
Виробник: onsemi
Description: MOSFET N-CHANNEL 30V 55A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3V @ 750µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V
Description: MOSFET N-CHANNEL 30V 55A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3V @ 750µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 153.8 грн |
| FDP032N08-F102 |
|
Виробник: onsemi
Description: MOSFET N-CHANNEL 75V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15160 pF @ 25 V
Description: MOSFET N-CHANNEL 75V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15160 pF @ 25 V
товар відсутній
| FDP038AN06A0-F102 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
Description: MOSFET N-CH 60V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
товар відсутній
| FDP047N08-F102 |
|
Виробник: onsemi
Description: MOSFET N-CH 75V 164A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 164A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 25 V
Description: MOSFET N-CH 75V 164A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 164A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 25 V
на замовлення 3196 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 194.5 грн |
| 10+ | 155.79 грн |
| 100+ | 124.04 грн |
| 800+ | 98.49 грн |
| 1600+ | 83.57 грн |
| 2400+ | 79.39 грн |
| FDPC3D5N025X9D |
|
Виробник: onsemi
Description: MOSFET 2N-CH 25V 74A 12QFN
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerWQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 26W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 74A
Input Capacitance (Ciss) (Max) @ Vds: 3340pF @ 13V
Rds On (Max) @ Id, Vgs: 3.01mOhm @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 12-PQFN (3.3x3.3)
Part Status: Obsolete
Description: MOSFET 2N-CH 25V 74A 12QFN
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerWQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 26W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 74A
Input Capacitance (Ciss) (Max) @ Vds: 3340pF @ 13V
Rds On (Max) @ Id, Vgs: 3.01mOhm @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 12-PQFN (3.3x3.3)
Part Status: Obsolete
товар відсутній
| FDPF33N25TRDTU |
|
Виробник: onsemi
Description: MOSFET N-CHANNEL 250V TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F (LG-Formed)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V
Description: MOSFET N-CHANNEL 250V TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F (LG-Formed)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V
товар відсутній
| FDPF39N20TLDTU |
|
Виробник: onsemi
Description: MOSFET N-CH 200V 39A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 19.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 25 V
Description: MOSFET N-CH 200V 39A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 19.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 25 V
товар відсутній