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BF959G BF959G onsemi bf959-d.pdf Description: RF TRANS NPN 20V 700MHZ TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 625mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 700MHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
товар відсутній
BF959RL1 BF959RL1 onsemi bf959-d.pdf Description: RF TRANS NPN 20V 700MHZ TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 625mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 700MHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
товар відсутній
BF959RL1G BF959RL1G onsemi bf959-d.pdf Description: RF TRANS NPN 20V 700MHZ TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 625mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 700MHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
товар відсутній
BF959ZL1 BF959ZL1 onsemi bf959-d.pdf Description: RF TRANS NPN 20V 700MHZ TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 625mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 700MHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
товар відсутній
BF959ZL1G BF959ZL1G onsemi bf959-d.pdf Description: RF TRANS NPN 20V 700MHZ TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 625mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 700MHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
товар відсутній
BFR30LT1 BFR30LT1 onsemi bfr30lt1-d.pdf Description: JFET N-CH SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 5 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 10 V
товар відсутній
BFR30LT1G BFR30LT1G onsemi bfr30lt1-d.pdf Description: JFET N-CH SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 5 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 10 V
товар відсутній
BFR31LT1 BFR31LT1 onsemi bfr30lt1-d.pdf Description: JFET N-CH 225MW SOT23
товар відсутній
BFR31LT1G BFR31LT1G onsemi bfr30lt1-d.pdf Description: JFET N-CH 225MW SOT23
товар відсутній
BS108G BS108G onsemi bs108-d.pdf Description: MOSFET N-CH 200V 250MA TO92-3
Packaging: Tube
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 2.8V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2V, 2.8V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
товар відсутній
BS170G BS170G onsemi Description: MOSFET N-CH 60V 500MA TO92-3
Packaging: Tube
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
товар відсутній
BS170RL1G BS170RL1G onsemi Description: MOSFET N-CH 60V 500MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
товар відсутній
BS170RLRMG BS170RLRMG onsemi Description: MOSFET N-CH 60V 500MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
товар відсутній
BS170RLRP BS170RLRP onsemi Description: MOSFET N-CH 60V 500MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
товар відсутній
BS170RLRPG BS170RLRPG onsemi Description: MOSFET N-CH 60V 500MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
товар відсутній
BS170ZL1G BS170ZL1G onsemi Description: MOSFET N-CH 60V 500MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
товар відсутній
BSP16T1 BSP16T1 onsemi bsp16t1-d.pdf Description: TRANS PNP 300V 0.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Frequency - Transition: 15MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.5 W
товар відсутній
BSP16T1G BSP16T1G onsemi bsp16t1-d.pdf Description: TRANS PNP 300V 0.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Frequency - Transition: 15MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.5 W
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
1000+12.03 грн
2000+ 10.45 грн
3000+ 9.88 грн
5000+ 8.66 грн
7000+ 8.3 грн
10000+ 7.96 грн
25000+ 7.07 грн
50000+ 6.64 грн
Мінімальне замовлення: 1000
BSP52T3 BSP52T3 onsemi bsp52t1-d.pdf Description: TRANS NPN DARL 80V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
товар відсутній
BSP52T3G BSP52T3G onsemi bsp52t1-d.pdf Description: TRANS NPN DARL 80V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
товар відсутній
BSR58LT1G BSR58LT1G onsemi bsr58lt1-d.pdf Description: JFET N-CH 40V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 350 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
товар відсутній
BSS123LT3 BSS123LT3 onsemi BSS123LT1%20Rev5.pdf Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V
товар відсутній
BSS123LT3G BSS123LT3G onsemi bss123lt1-d.pdf Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V
товар відсутній
BSS138LT3 BSS138LT3 onsemi bss138lt1-d.pdf Description: MOSFET N-CH 50V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 5V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
товар відсутній
BSS138LT3G BSS138LT3G onsemi bss138lt1-d.pdf Description: MOSFET N-CH 50V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 5V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
на замовлення 55000 шт:
термін постачання 21-31 дні (днів)
10000+3.23 грн
30000+ 3.06 грн
50000+ 2.75 грн
Мінімальне замовлення: 10000
BSS63LT1G BSS63LT1G onsemi bss63lt1-d.pdf Description: TRANS PNP 100V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2.5mA, 25mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 95MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 225 mW
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
3000+2.47 грн
6000+ 2.25 грн
9000+ 1.91 грн
30000+ 1.66 грн
Мінімальне замовлення: 3000
BSS64LT1 BSS64LT1 onsemi bss64lt1-d.pdf Description: TRANS NPN 80V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 15mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 1V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 225 mW
товар відсутній
BSS64LT1G BSS64LT1G onsemi bss64lt1-d.pdf Description: TRANS NPN 80V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 15mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 1V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 225 mW
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+2.58 грн
6000+ 2.3 грн
9000+ 1.91 грн
Мінімальне замовлення: 3000
BSV52LT1G BSV52LT1G onsemi bsv52lt1-d.pdf Description: TRANS NPN 12V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Frequency - Transition: 400MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 225 mW
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+4.39 грн
6000+ 3.92 грн
9000+ 3.25 грн
Мінімальне замовлення: 3000
BU323Z BU323Z onsemi bu323z-d.pdf Description: TRANS NPN DARL 350V 10A SOT93
Packaging: Tube
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 250mA, 10A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 5A, 4.6V
Frequency - Transition: 2MHz
Supplier Device Package: SOT-93
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 150 W
товар відсутній
BU323ZG BU323ZG onsemi bu323z-d.pdf Description: TRANS NPN DARL 350V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 250mA, 10A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 5A, 4.6V
Frequency - Transition: 2MHz
Supplier Device Package: TO-247-3
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 150 W
товар відсутній
BUB323Z BUB323Z onsemi bub323z-d.pdf Description: TRANS NPN DARL 350V 10A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 250mA, 10A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 5A, 4.6V
Frequency - Transition: 2MHz
Supplier Device Package: D²PAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 150 W
товар відсутній
BUB323ZG BUB323ZG onsemi bub323z-d.pdf Description: TRANS NPN DARL 350V 10A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 250mA, 10A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 5A, 4.6V
Frequency - Transition: 2MHz
Supplier Device Package: D²PAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 150 W
товар відсутній
BUD42D-1G BUD42D-1G onsemi bud42d-d.pdf Description: TRANS NPN 350V 4A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 25 W
товар відсутній
BUD42DG BUD42DG onsemi bud42d-d.pdf Description: TRANS NPN 350V 4A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 25 W
товар відсутній
BUH100 BUH100 onsemi buh100-d.pdf Description: TRANS NPN 700V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -60°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 1.5A, 7A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Frequency - Transition: 23MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Power - Max: 100 W
товар відсутній
BUH100G BUH100G onsemi buh100-d.pdf Description: TRANS NPN 400V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -60°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 1.5A, 7A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Frequency - Transition: 23MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 100 W
товар відсутній
BUH150 BUH150 onsemi buh150-d.pdf Description: TRANS NPN 700V 15A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 4A, 20A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 5V
Frequency - Transition: 23MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Power - Max: 150 W
товар відсутній
BUH150G BUH150G onsemi buh150-d.pdf Description: TRANS NPN 700V 15A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 4A, 20A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 5V
Frequency - Transition: 23MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Power - Max: 150 W
товар відсутній
BUH50 BUH50 onsemi buh50-d.pdf Description: TRANS NPN 500V 4A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 50 W
товар відсутній
BUH50G BUH50G onsemi buh50-d.pdf Description: TRANS NPN 500V 4A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 50 W
товар відсутній
BUH51G BUH51G onsemi buh51-d.pdf Description: TRANS NPN 500V 3A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 1A, 1V
Frequency - Transition: 23MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 50 W
товар відсутній
BUL146 BUL146 onsemi bul146-d.pdf Description: TRANS NPN 400V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 600mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 100 W
товар відсутній
BUL146F BUL146F onsemi bul146-d.pdf Description: TRANS NPN 400V 6A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 600mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 40 W
товар відсутній
BUL146FG BUL146FG onsemi bul146-d.pdf Description: TRANS NPN 400V 6A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 600mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 40 W
товар відсутній
BUL146G BUL146G onsemi bul146-d.pdf Description: TRANS NPN 400V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 600mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 100 W
товар відсутній
BUL44 BUL44 onsemi bul44-d.pdf Description: TRANS NPN 400V 2A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V
Frequency - Transition: 13MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 50 W
товар відсутній
BUL44G BUL44G onsemi bul44-d.pdf Description: TRANS NPN 400V 2A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V
Frequency - Transition: 13MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 50 W
товар відсутній
BUV21G BUV21G onsemi buv21-d.pdf Description: TRANS NPN 200V 40A TO204
Packaging: Tray
Package / Case: TO-204AE
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3A, 25A
Current - Collector Cutoff (Max): 3mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 12A, 2V
Frequency - Transition: 8MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 250 W
на замовлення 389 шт:
термін постачання 21-31 дні (днів)
1+1357.43 грн
10+ 1161.59 грн
25+ 1083.73 грн
100+ 953.49 грн
300+ 889.93 грн
BUV22 BUV22 onsemi buv22-d.pdf Description: TRANS NPN 250V 40A TO204
Packaging: Tray
Package / Case: TO-204AE
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2.5A, 20A
Current - Collector Cutoff (Max): 3mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V
Frequency - Transition: 8MHz
Supplier Device Package: TO-204 (TO-3)
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 250 W
товар відсутній
BUV22G BUV22G onsemi buv22-d.pdf Description: TRANS NPN 250V 40A TO204
Packaging: Tray
Package / Case: TO-204AE
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2.5A, 20A
Current - Collector Cutoff (Max): 3mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V
Frequency - Transition: 8MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 250 W
на замовлення 1092 шт:
термін постачання 21-31 дні (днів)
1+1607.86 грн
10+ 1375.95 грн
25+ 1283.69 грн
100+ 1129.41 грн
300+ 1054.11 грн
500+ 963.76 грн
BUV26G BUV26G onsemi buv26-d.pdf Description: TRANS NPN 90V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.2A, 12A
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 85 W
товар відсутній
BYV32-200 BYV32-200 onsemi byv32-200-d.pdf Description: DIODE ARRAY GP 200V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
товар відсутній
BYV32-200G BYV32-200G onsemi byv32-200-d.pdf Description: DIODE ARRAY GP 200V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
на замовлення 1774 шт:
термін постачання 21-31 дні (днів)
3+133.86 грн
50+ 103.54 грн
100+ 85.19 грн
500+ 67.65 грн
1000+ 57.4 грн
Мінімальне замовлення: 3
BYW29-200G BYW29-200G onsemi byw29-d.pdf description Description: DIODE GEN PURP 200V 8A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 3072 шт:
термін постачання 21-31 дні (днів)
4+81.22 грн
50+ 62.38 грн
100+ 49.43 грн
500+ 39.32 грн
1000+ 32.03 грн
2000+ 30.15 грн
Мінімальне замовлення: 4
BYW51-200G BYW51-200G onsemi byw51-200-d.pdf Description: DIODE ARRAY GP 200V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
BYW80-200G BYW80-200G onsemi byw80-d.pdf description Description: DIODE GEN PURP 200V 8A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 22 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 1268 шт:
термін постачання 21-31 дні (днів)
4+81.97 грн
50+ 63.84 грн
100+ 50.59 грн
500+ 40.24 грн
1000+ 32.78 грн
Мінімальне замовлення: 4
BZX84B18LT3G BZX84B18LT3G onsemi bzx84c2v4lt1-d.pdf Description: DIODE ZENER 18V 225MW SOT23-3
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
товар відсутній
BZX84B5V6LT3 BZX84B5V6LT3 onsemi bzx84c2v4lt1-d.pdf Description: DIODE ZENER 5.6V 225MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
товар відсутній
BZX84C10ET3 BZX84C10ET3 onsemi BZX84C2V4ET1-D.pdf Description: DIODE ZENER 10V 225MW SOT23-3
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
товар відсутній
BF959G bf959-d.pdf
BF959G
Виробник: onsemi
Description: RF TRANS NPN 20V 700MHZ TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 625mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 700MHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
товар відсутній
BF959RL1 bf959-d.pdf
BF959RL1
Виробник: onsemi
Description: RF TRANS NPN 20V 700MHZ TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 625mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 700MHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
товар відсутній
BF959RL1G bf959-d.pdf
BF959RL1G
Виробник: onsemi
Description: RF TRANS NPN 20V 700MHZ TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 625mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 700MHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
товар відсутній
BF959ZL1 bf959-d.pdf
BF959ZL1
Виробник: onsemi
Description: RF TRANS NPN 20V 700MHZ TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 625mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 700MHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
товар відсутній
BF959ZL1G bf959-d.pdf
BF959ZL1G
Виробник: onsemi
Description: RF TRANS NPN 20V 700MHZ TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 625mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 700MHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
товар відсутній
BFR30LT1 bfr30lt1-d.pdf
BFR30LT1
Виробник: onsemi
Description: JFET N-CH SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 5 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 10 V
товар відсутній
BFR30LT1G bfr30lt1-d.pdf
BFR30LT1G
Виробник: onsemi
Description: JFET N-CH SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 5 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 10 V
товар відсутній
BFR31LT1 bfr30lt1-d.pdf
BFR31LT1
Виробник: onsemi
Description: JFET N-CH 225MW SOT23
товар відсутній
BFR31LT1G bfr30lt1-d.pdf
BFR31LT1G
Виробник: onsemi
Description: JFET N-CH 225MW SOT23
товар відсутній
BS108G bs108-d.pdf
BS108G
Виробник: onsemi
Description: MOSFET N-CH 200V 250MA TO92-3
Packaging: Tube
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 2.8V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2V, 2.8V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
товар відсутній
BS170G
BS170G
Виробник: onsemi
Description: MOSFET N-CH 60V 500MA TO92-3
Packaging: Tube
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
товар відсутній
BS170RL1G
BS170RL1G
Виробник: onsemi
Description: MOSFET N-CH 60V 500MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
товар відсутній
BS170RLRMG
BS170RLRMG
Виробник: onsemi
Description: MOSFET N-CH 60V 500MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
товар відсутній
BS170RLRP
BS170RLRP
Виробник: onsemi
Description: MOSFET N-CH 60V 500MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
товар відсутній
BS170RLRPG
BS170RLRPG
Виробник: onsemi
Description: MOSFET N-CH 60V 500MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
товар відсутній
BS170ZL1G
BS170ZL1G
Виробник: onsemi
Description: MOSFET N-CH 60V 500MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
товар відсутній
BSP16T1 bsp16t1-d.pdf
BSP16T1
Виробник: onsemi
Description: TRANS PNP 300V 0.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Frequency - Transition: 15MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.5 W
товар відсутній
BSP16T1G bsp16t1-d.pdf
BSP16T1G
Виробник: onsemi
Description: TRANS PNP 300V 0.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Frequency - Transition: 15MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.5 W
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+12.03 грн
2000+ 10.45 грн
3000+ 9.88 грн
5000+ 8.66 грн
7000+ 8.3 грн
10000+ 7.96 грн
25000+ 7.07 грн
50000+ 6.64 грн
Мінімальне замовлення: 1000
BSP52T3 bsp52t1-d.pdf
BSP52T3
Виробник: onsemi
Description: TRANS NPN DARL 80V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
товар відсутній
BSP52T3G bsp52t1-d.pdf
BSP52T3G
Виробник: onsemi
Description: TRANS NPN DARL 80V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
товар відсутній
BSR58LT1G bsr58lt1-d.pdf
BSR58LT1G
Виробник: onsemi
Description: JFET N-CH 40V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 350 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
товар відсутній
BSS123LT3 BSS123LT1%20Rev5.pdf
BSS123LT3
Виробник: onsemi
Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V
товар відсутній
BSS123LT3G bss123lt1-d.pdf
BSS123LT3G
Виробник: onsemi
Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V
товар відсутній
BSS138LT3 bss138lt1-d.pdf
BSS138LT3
Виробник: onsemi
Description: MOSFET N-CH 50V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 5V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
товар відсутній
BSS138LT3G bss138lt1-d.pdf
BSS138LT3G
Виробник: onsemi
Description: MOSFET N-CH 50V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 5V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
на замовлення 55000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10000+3.23 грн
30000+ 3.06 грн
50000+ 2.75 грн
Мінімальне замовлення: 10000
BSS63LT1G bss63lt1-d.pdf
BSS63LT1G
Виробник: onsemi
Description: TRANS PNP 100V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2.5mA, 25mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 95MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 225 mW
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+2.47 грн
6000+ 2.25 грн
9000+ 1.91 грн
30000+ 1.66 грн
Мінімальне замовлення: 3000
BSS64LT1 bss64lt1-d.pdf
BSS64LT1
Виробник: onsemi
Description: TRANS NPN 80V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 15mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 1V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 225 mW
товар відсутній
BSS64LT1G bss64lt1-d.pdf
BSS64LT1G
Виробник: onsemi
Description: TRANS NPN 80V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 15mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 1V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 225 mW
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+2.58 грн
6000+ 2.3 грн
9000+ 1.91 грн
Мінімальне замовлення: 3000
BSV52LT1G bsv52lt1-d.pdf
BSV52LT1G
Виробник: onsemi
Description: TRANS NPN 12V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Frequency - Transition: 400MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 225 mW
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+4.39 грн
6000+ 3.92 грн
9000+ 3.25 грн
Мінімальне замовлення: 3000
BU323Z bu323z-d.pdf
BU323Z
Виробник: onsemi
Description: TRANS NPN DARL 350V 10A SOT93
Packaging: Tube
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 250mA, 10A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 5A, 4.6V
Frequency - Transition: 2MHz
Supplier Device Package: SOT-93
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 150 W
товар відсутній
BU323ZG bu323z-d.pdf
BU323ZG
Виробник: onsemi
Description: TRANS NPN DARL 350V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 250mA, 10A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 5A, 4.6V
Frequency - Transition: 2MHz
Supplier Device Package: TO-247-3
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 150 W
товар відсутній
BUB323Z bub323z-d.pdf
BUB323Z
Виробник: onsemi
Description: TRANS NPN DARL 350V 10A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 250mA, 10A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 5A, 4.6V
Frequency - Transition: 2MHz
Supplier Device Package: D²PAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 150 W
товар відсутній
BUB323ZG bub323z-d.pdf
BUB323ZG
Виробник: onsemi
Description: TRANS NPN DARL 350V 10A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 250mA, 10A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 5A, 4.6V
Frequency - Transition: 2MHz
Supplier Device Package: D²PAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 150 W
товар відсутній
BUD42D-1G bud42d-d.pdf
BUD42D-1G
Виробник: onsemi
Description: TRANS NPN 350V 4A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 25 W
товар відсутній
BUD42DG bud42d-d.pdf
BUD42DG
Виробник: onsemi
Description: TRANS NPN 350V 4A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 25 W
товар відсутній
BUH100 buh100-d.pdf
BUH100
Виробник: onsemi
Description: TRANS NPN 700V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -60°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 1.5A, 7A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Frequency - Transition: 23MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Power - Max: 100 W
товар відсутній
BUH100G buh100-d.pdf
BUH100G
Виробник: onsemi
Description: TRANS NPN 400V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -60°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 1.5A, 7A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Frequency - Transition: 23MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 100 W
товар відсутній
BUH150 buh150-d.pdf
BUH150
Виробник: onsemi
Description: TRANS NPN 700V 15A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 4A, 20A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 5V
Frequency - Transition: 23MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Power - Max: 150 W
товар відсутній
BUH150G buh150-d.pdf
BUH150G
Виробник: onsemi
Description: TRANS NPN 700V 15A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 4A, 20A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 5V
Frequency - Transition: 23MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Power - Max: 150 W
товар відсутній
BUH50 buh50-d.pdf
BUH50
Виробник: onsemi
Description: TRANS NPN 500V 4A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 50 W
товар відсутній
BUH50G buh50-d.pdf
BUH50G
Виробник: onsemi
Description: TRANS NPN 500V 4A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 50 W
товар відсутній
BUH51G buh51-d.pdf
BUH51G
Виробник: onsemi
Description: TRANS NPN 500V 3A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 1A, 1V
Frequency - Transition: 23MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 50 W
товар відсутній
BUL146 bul146-d.pdf
BUL146
Виробник: onsemi
Description: TRANS NPN 400V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 600mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 100 W
товар відсутній
BUL146F bul146-d.pdf
BUL146F
Виробник: onsemi
Description: TRANS NPN 400V 6A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 600mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 40 W
товар відсутній
BUL146FG bul146-d.pdf
BUL146FG
Виробник: onsemi
Description: TRANS NPN 400V 6A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 600mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 40 W
товар відсутній
BUL146G bul146-d.pdf
BUL146G
Виробник: onsemi
Description: TRANS NPN 400V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 600mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 100 W
товар відсутній
BUL44 bul44-d.pdf
BUL44
Виробник: onsemi
Description: TRANS NPN 400V 2A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V
Frequency - Transition: 13MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 50 W
товар відсутній
BUL44G bul44-d.pdf
BUL44G
Виробник: onsemi
Description: TRANS NPN 400V 2A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V
Frequency - Transition: 13MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 50 W
товар відсутній
BUV21G buv21-d.pdf
BUV21G
Виробник: onsemi
Description: TRANS NPN 200V 40A TO204
Packaging: Tray
Package / Case: TO-204AE
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3A, 25A
Current - Collector Cutoff (Max): 3mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 12A, 2V
Frequency - Transition: 8MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 250 W
на замовлення 389 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1357.43 грн
10+ 1161.59 грн
25+ 1083.73 грн
100+ 953.49 грн
300+ 889.93 грн
BUV22 buv22-d.pdf
BUV22
Виробник: onsemi
Description: TRANS NPN 250V 40A TO204
Packaging: Tray
Package / Case: TO-204AE
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2.5A, 20A
Current - Collector Cutoff (Max): 3mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V
Frequency - Transition: 8MHz
Supplier Device Package: TO-204 (TO-3)
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 250 W
товар відсутній
BUV22G buv22-d.pdf
BUV22G
Виробник: onsemi
Description: TRANS NPN 250V 40A TO204
Packaging: Tray
Package / Case: TO-204AE
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2.5A, 20A
Current - Collector Cutoff (Max): 3mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V
Frequency - Transition: 8MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 250 W
на замовлення 1092 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1607.86 грн
10+ 1375.95 грн
25+ 1283.69 грн
100+ 1129.41 грн
300+ 1054.11 грн
500+ 963.76 грн
BUV26G buv26-d.pdf
BUV26G
Виробник: onsemi
Description: TRANS NPN 90V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.2A, 12A
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 85 W
товар відсутній
BYV32-200 byv32-200-d.pdf
BYV32-200
Виробник: onsemi
Description: DIODE ARRAY GP 200V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
товар відсутній
BYV32-200G byv32-200-d.pdf
BYV32-200G
Виробник: onsemi
Description: DIODE ARRAY GP 200V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
на замовлення 1774 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+133.86 грн
50+ 103.54 грн
100+ 85.19 грн
500+ 67.65 грн
1000+ 57.4 грн
Мінімальне замовлення: 3
BYW29-200G description byw29-d.pdf
BYW29-200G
Виробник: onsemi
Description: DIODE GEN PURP 200V 8A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 3072 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+81.22 грн
50+ 62.38 грн
100+ 49.43 грн
500+ 39.32 грн
1000+ 32.03 грн
2000+ 30.15 грн
Мінімальне замовлення: 4
BYW51-200G byw51-200-d.pdf
BYW51-200G
Виробник: onsemi
Description: DIODE ARRAY GP 200V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
BYW80-200G description byw80-d.pdf
BYW80-200G
Виробник: onsemi
Description: DIODE GEN PURP 200V 8A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 22 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 1268 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+81.97 грн
50+ 63.84 грн
100+ 50.59 грн
500+ 40.24 грн
1000+ 32.78 грн
Мінімальне замовлення: 4
BZX84B18LT3G bzx84c2v4lt1-d.pdf
BZX84B18LT3G
Виробник: onsemi
Description: DIODE ZENER 18V 225MW SOT23-3
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
товар відсутній
BZX84B5V6LT3 bzx84c2v4lt1-d.pdf
BZX84B5V6LT3
Виробник: onsemi
Description: DIODE ZENER 5.6V 225MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
товар відсутній
BZX84C10ET3 BZX84C2V4ET1-D.pdf
BZX84C10ET3
Виробник: onsemi
Description: DIODE ZENER 10V 225MW SOT23-3
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
товар відсутній
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