| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MMSZ5239BT1G | ONSEMI |
 Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode Mounting: SMD Power dissipation: 0.5W Kind of package: reel; tape Type of diode: Zener Case: SOD123 Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 9.1V |
на замовлення 2798 шт: термін постачання 21-30 дні (днів) |
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FDD2670 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 3.6A; Idm: 20A; 70W; DPAK Mounting: SMD Case: DPAK Power dissipation: 70W Kind of package: reel; tape Drain-source voltage: 200V Drain current: 3.6A On-state resistance: 275mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 43nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A |
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FDS6575 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -10A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -10A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±8V On-state resistance: 20mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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FDS6576 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -11A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -11A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 23mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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FDS6612A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.4A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.4A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 37mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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FDS6681Z | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -20A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 260nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 827 шт: термін постачання 21-30 дні (днів) |
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FDS6682 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 14A; Idm: 50A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 14A Pulsed drain current: 50A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhanced |
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FDS6690A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 11A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 1663 шт: термін постачання 21-30 дні (днів) |
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FDS6699S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 3.1Ω Mounting: SMD Gate charge: 91nC Kind of package: reel; tape Kind of channel: enhanced |
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FDS6875 | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -6A; 1.6W; SO8 Type of transistor: P-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±8V On-state resistance: 48mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 1718 шт: термін постачання 21-30 дні (днів) |
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FDS6910 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.5A; 1.6W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 7.5A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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FDS6911 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.5A; Idm: 20A; 1.6W; SO8 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.5A Pulsed drain current: 20A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level |
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MC74LVX14DTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 20µA Kind of input: with Schmitt trigger Family: LVX |
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| FDMD8680 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 80V; 42A; Idm: 487A; 39W; PQFN8 Kind of package: reel; tape Drain-source voltage: 80V Drain current: 42A On-state resistance: 8mΩ Type of transistor: N-MOSFET x2 Power dissipation: 39W Polarisation: unipolar Gate charge: 73nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 487A Mounting: SMD Case: PQFN8 |
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BCW65ALT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.8A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.8A Power dissipation: 0.3W Case: SOT23 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 198 шт: термін постачання 21-30 дні (днів) |
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| FSA2259UMX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.4VDC; OUT: SPDT x2 Type of integrated circuit: analog switch Number of channels: 2 Case: UMLP10 Supply voltage: 1.65...4.4V DC Mounting: SMD Operating temperature: -40...85°C Kind of output: SPDT x2 Technology: CMOS; TTL |
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| NLAS4684MR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; Micro10; 1.8÷5.5VDC; reel,tape; CMOS Operating temperature: -55...125°C Mounting: SMD Kind of package: reel; tape Technology: CMOS Number of channels: 2 Kind of output: SPDT x2 Case: Micro10 Supply voltage: 1.8...5.5V DC Type of integrated circuit: analog switch |
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| FSA2257L10X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷5.5VDC; reel,tape; 1uA Type of integrated circuit: analog switch Number of channels: 2 Case: MicroPak10 Supply voltage: 1.65...5.5V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Kind of output: SPDT x2 Quiescent current: 1µA Technology: CMOS; TTL |
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| NS5A4684SMNTBG | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; Outputs: 2; WQFN10; 1.65÷5.5VDC; reel,tape Type of integrated circuit: analog switch Number of channels: 2 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: WQFN10 Supply voltage: 1.65...5.5V DC Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 2µA Kind of output: SPDT x2 Number of outputs: 2 |
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FSAV330MTCX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 4; TSSOP16; 4÷5.5VDC; reel,tape; OUT: SPDT x4 Type of integrated circuit: analog switch Number of channels: 4 Case: TSSOP16 Supply voltage: 4...5.5V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Kind of output: SPDT x4 Quiescent current: 3µA Technology: CMOS; TTL |
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NVTR4503NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23 Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SOT23 Drain-source voltage: 30V Drain current: 1.5A On-state resistance: 0.14Ω Type of transistor: N-MOSFET Power dissipation: 0.73W Polarisation: unipolar |
на замовлення 935 шт: термін постачання 21-30 дні (днів) |
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| MC79L18ACPG | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; -18V; 0.1A; TO92; THT; bulk Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.7V Output voltage: -18V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: bulk Operating temperature: 0...125°C Tolerance: ±2% Number of channels: 1 Manufacturer series: MC79L00A |
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| MC14517BDWR2G | ONSEMI |
Category: Shift registers Description: IC: digital; 64bit,static shift register; Ch: 2; CMOS; SMD; SO16WB Type of integrated circuit: digital Kind of integrated circuit: 64bit; static shift register Number of channels: 2 Technology: CMOS Mounting: SMD Case: SO16WB Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape |
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| MC74ACT273DTR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; octal,D flip-flop; Ch: 8; TTL; ACT; SMD; TSSOP20; ACT Type of integrated circuit: digital Kind of integrated circuit: D flip-flop; octal Number of channels: 8 Technology: TTL Mounting: SMD Case: TSSOP20 Manufacturer series: ACT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: ACT |
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NCP361MUTBG | ONSEMI |
Category: Drivers - integrated circuits Description: IC: driver; uDFN6; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V Type of integrated circuit: driver Case: uDFN6 Mounting: SMD Operating temperature: -40...85°C Application: USB Input voltage: 1.2...20V Kind of output: transistor Threshold on-voltage: 3V |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| FDMS86182 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 49A; Idm: 364A; 83W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 49A Pulsed drain current: 364A Power dissipation: 83W Case: Power56 Gate-source voltage: ±20V On-state resistance: 19.5mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhanced |
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MGSF1N02LT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.75A; 0.4W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.75A Power dissipation: 0.4W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 1874 шт: термін постачання 21-30 дні (днів) |
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MGSF2N02ELT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.8A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.8A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 85mΩ Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 491 шт: термін постачання 21-30 дні (днів) |
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| NTGS3130NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 19A; 600mW; TSOP6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.1A Pulsed drain current: 19A Power dissipation: 0.6W Case: TSOP6 Gate-source voltage: ±8V On-state resistance: 19Ω Mounting: SMD Gate charge: 13.2nC Kind of package: reel; tape Kind of channel: enhanced |
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| NTGS3136PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.6A; Idm: -20A; 700mW; TSOP6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.6A Pulsed drain current: -20A Power dissipation: 0.7W Case: TSOP6 Gate-source voltage: ±8V On-state resistance: 32mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced |
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| NTGS3433T1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -2.35A; Idm: -14A; 1W; TSOP6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -2.35A Pulsed drain current: -14A Power dissipation: 1W Case: TSOP6 Gate-source voltage: ±8V On-state resistance: 75mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced |
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| NTGS3441T1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.35A; 1W; TSOP6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.35A Power dissipation: 1W Case: TSOP6 Gate-source voltage: ±8V On-state resistance: 90mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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NTGS3443T1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 1W; TSOP6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.1A Power dissipation: 1W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 7.5nC Kind of package: reel; tape Kind of channel: enhanced |
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| MM3Z5V1B | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 5.1V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD323F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 1.8µA Max. forward voltage: 1V |
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| MM3Z75VB | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 75V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 75V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Max. forward voltage: 1V Case: SOD323F Semiconductor structure: single diode Leakage current: 45nA |
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NCP167BMX330TBG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.7A; XDFN4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.29V Output voltage: 3.3V Output current: 0.7A Case: XDFN4 Mounting: SMD Manufacturer series: NCP167 Kind of package: tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.9...5.5V |
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FDS4672A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 11A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 21mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2322 шт: термін постачання 21-30 дні (днів) |
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FDS8449 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 7.6A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.6A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 1513 шт: термін постачання 21-30 дні (днів) |
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MBRM120LT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 1A; DO216AA; reel,tape Max. off-state voltage: 20V Max. load current: 2A Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 50A Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: DO216AA |
на замовлення 540 шт: термін постачання 21-30 дні (днів) |
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| 74VCX08BQX | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; DQFN14; VCX; 1.2÷3.6VDC; VCX Technology: CMOS Case: DQFN14 Mounting: SMD Kind of package: reel; tape Manufacturer series: VCX Operating temperature: -40...85°C Number of channels: 4 Supply voltage: 1.2...3.6V DC Kind of gate: AND Type of integrated circuit: digital Number of inputs: 2 Family: VCX |
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74VCX08MTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; VCX; 1.2÷3.6VDC; -40÷85°C Case: TSSOP14 Mounting: SMD Kind of package: reel; tape Manufacturer series: VCX Operating temperature: -40...85°C Number of channels: quad; 4 Supply voltage: 1.2...3.6V DC Kind of gate: AND Type of integrated circuit: digital Quiescent current: 20µA Number of inputs: 2 |
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| MM3Z4V3B | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 4.3V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 4.3V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Max. forward voltage: 1V Case: SOD323F Semiconductor structure: single diode Leakage current: 2.7µA |
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| MM3Z4V3C | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 4.3V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 4.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 1V Case: SOD323F Semiconductor structure: single diode Leakage current: 2.7µA |
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MM3Z4V3ST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 4.3V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.3V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
на замовлення 1550 шт: термін постачання 21-30 дні (днів) |
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MM3Z4V3T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 4.3V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
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SZMM3Z4V3ST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 4.3V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.3V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Application: automotive industry |
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SZMM3Z4V3T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 4.3V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.3V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Application: automotive industry |
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2SD1048-6-TB-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 15V; 0.7A; 0.2W; SC59 Mounting: SMD Case: SC59 Kind of package: reel; tape Frequency: 250MHz Collector-emitter voltage: 15V Current gain: 200...400 Collector current: 0.7A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar |
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74LVT244MTC | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 2.7...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state |
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74LVT244MTCX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 2.7...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state |
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MC74LVX04DR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷3.6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 20µA Family: LVX |
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MC74LVX04DTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 20µA Family: LVX |
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MMBZ27VCLT1G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 27V; 1A; 40W; double,common cathode; SOT23; ±5% Type of diode: TVS array Breakdown voltage: 27V Max. forward impulse current: 1A Peak pulse power dissipation: 40W Semiconductor structure: common cathode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 22V Features of semiconductor devices: ESD protection Leakage current: 50nA Kind of package: reel; tape Tolerance: ±5% |
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SZMMBZ27VCLT1G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 27V; 1A; 40W; double,common cathode; SOT23; ±5% Type of diode: TVS array Breakdown voltage: 27V Max. forward impulse current: 1A Peak pulse power dissipation: 40W Semiconductor structure: common cathode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 22V Features of semiconductor devices: ESD protection Leakage current: 50nA Kind of package: reel; tape Application: automotive industry Tolerance: ±5% |
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| MC74AC10DG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: 3 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: SOIC14 Manufacturer series: AC Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: tube Family: AC |
на замовлення 135 шт: термін постачання 21-30 дні (днів) |
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| MC74AC10DR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: 3 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: SOIC14 Manufacturer series: AC Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC |
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MC74AC4040DG | ONSEMI |
Category: Counters/dividers Description: IC: digital; 12-stage,asynchronous reset,binary ripple counter Type of integrated circuit: digital Kind of integrated circuit: 12-stage; asynchronous reset; binary ripple counter Number of channels: 1 Number of inputs: 2 Technology: CMOS Manufacturer series: AC Mounting: SMD Case: SOIC16 Family: AC Supply voltage: 2...6V DC Kind of package: tube Operating temperature: -40...85°C |
на замовлення 33 шт: термін постачання 21-30 дні (днів) |
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MC74AC4040DR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; 12-stage,asynchronous reset,binary ripple counter Type of integrated circuit: digital Kind of integrated circuit: 12-stage; asynchronous reset; binary ripple counter Number of channels: 1 Number of inputs: 2 Technology: CMOS Manufacturer series: AC Mounting: SMD Case: SOIC16 Family: AC Supply voltage: 2...6V DC Kind of package: reel; tape Operating temperature: -40...85°C |
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1N5235BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 6.8V; reel,tape; DO35; single diode; 3uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.8V Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 3µA |
на замовлення 80 шт: термін постачання 21-30 дні (днів) |
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NCP5109ADR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-side; low-side Case: SO8 Output current: -500...250mA Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 160ns Pulse fall time: 75ns Voltage class: 200V |
товар відсутній |
| MMSZ5239BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Case: SOD123
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 9.1V
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Case: SOD123
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 9.1V
на замовлення 2798 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 10.49 грн |
| 64+ | 5.92 грн |
| 106+ | 3.57 грн |
| 500+ | 2.54 грн |
| 607+ | 1.45 грн |
| 1669+ | 1.37 грн |
| FDD2670 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.6A; Idm: 20A; 70W; DPAK
Mounting: SMD
Case: DPAK
Power dissipation: 70W
Kind of package: reel; tape
Drain-source voltage: 200V
Drain current: 3.6A
On-state resistance: 275mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.6A; Idm: 20A; 70W; DPAK
Mounting: SMD
Case: DPAK
Power dissipation: 70W
Kind of package: reel; tape
Drain-source voltage: 200V
Drain current: 3.6A
On-state resistance: 275mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
товар відсутній
| FDS6575 |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -10A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -10A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDS6576 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 23mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 23mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDS6612A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.4A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.4A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.4A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.4A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDS6681Z |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 827 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 140.41 грн |
| 11+ | 81.67 грн |
| 30+ | 77.18 грн |
| 500+ | 74.18 грн |
| FDS6682 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; Idm: 50A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; Idm: 50A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDS6690A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 1663 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 47.61 грн |
| 25+ | 37.76 грн |
| 33+ | 26.98 грн |
| 90+ | 25.48 грн |
| FDS6699S |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 3.1Ω
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 3.1Ω
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDS6875 |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -6A; 1.6W; SO8
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -6A; 1.6W; SO8
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 1718 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 71.01 грн |
| 7+ | 54.1 грн |
| 20+ | 45.63 грн |
| 53+ | 43.16 грн |
| 500+ | 41.51 грн |
| FDS6910 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.5A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.5A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDS6911 |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.5A; Idm: 20A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.5A
Pulsed drain current: 20A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.5A; Idm: 20A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.5A
Pulsed drain current: 20A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| MC74LVX14DTR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Family: LVX
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Family: LVX
товар відсутній
| FDMD8680 |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 42A; Idm: 487A; 39W; PQFN8
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 42A
On-state resistance: 8mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 39W
Polarisation: unipolar
Gate charge: 73nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 487A
Mounting: SMD
Case: PQFN8
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 42A; Idm: 487A; 39W; PQFN8
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 42A
On-state resistance: 8mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 39W
Polarisation: unipolar
Gate charge: 73nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 487A
Mounting: SMD
Case: PQFN8
товар відсутній
| BCW65ALT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.8A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.8A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.8A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.8A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 198 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 13.72 грн |
| 42+ | 8.99 грн |
| 100+ | 4.11 грн |
| FSA2259UMX |
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.4VDC; OUT: SPDT x2
Type of integrated circuit: analog switch
Number of channels: 2
Case: UMLP10
Supply voltage: 1.65...4.4V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: SPDT x2
Technology: CMOS; TTL
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.4VDC; OUT: SPDT x2
Type of integrated circuit: analog switch
Number of channels: 2
Case: UMLP10
Supply voltage: 1.65...4.4V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: SPDT x2
Technology: CMOS; TTL
товар відсутній
| NLAS4684MR2G |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; Micro10; 1.8÷5.5VDC; reel,tape; CMOS
Operating temperature: -55...125°C
Mounting: SMD
Kind of package: reel; tape
Technology: CMOS
Number of channels: 2
Kind of output: SPDT x2
Case: Micro10
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: analog switch
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; Micro10; 1.8÷5.5VDC; reel,tape; CMOS
Operating temperature: -55...125°C
Mounting: SMD
Kind of package: reel; tape
Technology: CMOS
Number of channels: 2
Kind of output: SPDT x2
Case: Micro10
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: analog switch
товар відсутній
| FSA2257L10X |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷5.5VDC; reel,tape; 1uA
Type of integrated circuit: analog switch
Number of channels: 2
Case: MicroPak10
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: SPDT x2
Quiescent current: 1µA
Technology: CMOS; TTL
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷5.5VDC; reel,tape; 1uA
Type of integrated circuit: analog switch
Number of channels: 2
Case: MicroPak10
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: SPDT x2
Quiescent current: 1µA
Technology: CMOS; TTL
товар відсутній
| NS5A4684SMNTBG |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; Outputs: 2; WQFN10; 1.65÷5.5VDC; reel,tape
Type of integrated circuit: analog switch
Number of channels: 2
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: WQFN10
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 2µA
Kind of output: SPDT x2
Number of outputs: 2
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; Outputs: 2; WQFN10; 1.65÷5.5VDC; reel,tape
Type of integrated circuit: analog switch
Number of channels: 2
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: WQFN10
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 2µA
Kind of output: SPDT x2
Number of outputs: 2
товар відсутній
| FSAV330MTCX |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 4; TSSOP16; 4÷5.5VDC; reel,tape; OUT: SPDT x4
Type of integrated circuit: analog switch
Number of channels: 4
Case: TSSOP16
Supply voltage: 4...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: SPDT x4
Quiescent current: 3µA
Technology: CMOS; TTL
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 4; TSSOP16; 4÷5.5VDC; reel,tape; OUT: SPDT x4
Type of integrated circuit: analog switch
Number of channels: 4
Case: TSSOP16
Supply voltage: 4...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: SPDT x4
Quiescent current: 3µA
Technology: CMOS; TTL
товар відсутній
| NVTR4503NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 1.5A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 0.73W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 1.5A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 0.73W
Polarisation: unipolar
на замовлення 935 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 27.44 грн |
| 21+ | 17.98 грн |
| 25+ | 15.36 грн |
| 50+ | 10.86 грн |
| 100+ | 9.44 грн |
| 155+ | 5.67 грн |
| 426+ | 5.36 грн |
| MC79L18ACPG |
|
Виробник: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -18V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: -18V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Operating temperature: 0...125°C
Tolerance: ±2%
Number of channels: 1
Manufacturer series: MC79L00A
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -18V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: -18V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Operating temperature: 0...125°C
Tolerance: ±2%
Number of channels: 1
Manufacturer series: MC79L00A
товар відсутній
| MC14517BDWR2G |
|
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; 64bit,static shift register; Ch: 2; CMOS; SMD; SO16WB
Type of integrated circuit: digital
Kind of integrated circuit: 64bit; static shift register
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO16WB
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Shift registers
Description: IC: digital; 64bit,static shift register; Ch: 2; CMOS; SMD; SO16WB
Type of integrated circuit: digital
Kind of integrated circuit: 64bit; static shift register
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO16WB
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
товар відсутній
| MC74ACT273DTR2G |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; TTL; ACT; SMD; TSSOP20; ACT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: TTL
Mounting: SMD
Case: TSSOP20
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; TTL; ACT; SMD; TSSOP20; ACT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: TTL
Mounting: SMD
Case: TSSOP20
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
товар відсутній
| NCP361MUTBG |
|
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; uDFN6; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Case: uDFN6
Mounting: SMD
Operating temperature: -40...85°C
Application: USB
Input voltage: 1.2...20V
Kind of output: transistor
Threshold on-voltage: 3V
Category: Drivers - integrated circuits
Description: IC: driver; uDFN6; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Case: uDFN6
Mounting: SMD
Operating temperature: -40...85°C
Application: USB
Input voltage: 1.2...20V
Kind of output: transistor
Threshold on-voltage: 3V
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 68.43 грн |
| 8+ | 49 грн |
| 23+ | 38.23 грн |
| 62+ | 36.15 грн |
| FDMS86182 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49A; Idm: 364A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49A
Pulsed drain current: 364A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 19.5mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49A; Idm: 364A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49A
Pulsed drain current: 364A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 19.5mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| MGSF1N02LT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.75A; 0.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.75A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.75A; 0.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.75A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 1874 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 34.7 грн |
| 16+ | 23.53 грн |
| 84+ | 10.57 грн |
| 229+ | 9.97 грн |
| MGSF2N02ELT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 491 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 30.66 грн |
| 19+ | 20.38 грн |
| 83+ | 10.57 грн |
| 200+ | 10.34 грн |
| 227+ | 9.97 грн |
| NTGS3130NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 19A; 600mW; TSOP6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Pulsed drain current: 19A
Power dissipation: 0.6W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 19Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 19A; 600mW; TSOP6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Pulsed drain current: 19A
Power dissipation: 0.6W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 19Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NTGS3136PT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.6A; Idm: -20A; 700mW; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.6A
Pulsed drain current: -20A
Power dissipation: 0.7W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.6A; Idm: -20A; 700mW; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.6A
Pulsed drain current: -20A
Power dissipation: 0.7W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NTGS3433T1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.35A; Idm: -14A; 1W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.35A
Pulsed drain current: -14A
Power dissipation: 1W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.35A; Idm: -14A; 1W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.35A
Pulsed drain current: -14A
Power dissipation: 1W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NTGS3441T1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.35A; 1W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.35A
Power dissipation: 1W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.35A; 1W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.35A
Power dissipation: 1W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NTGS3443T1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 1W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Power dissipation: 1W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 1W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Power dissipation: 1W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| MM3Z5V1B |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.1V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 1.8µA
Max. forward voltage: 1V
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.1V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 1.8µA
Max. forward voltage: 1V
товар відсутній
| MM3Z75VB |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 75V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 75V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 1V
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 75V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 75V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 1V
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
товар відсутній
| NCP167BMX330TBG |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.7A; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.29V
Output voltage: 3.3V
Output current: 0.7A
Case: XDFN4
Mounting: SMD
Manufacturer series: NCP167
Kind of package: tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.7A; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.29V
Output voltage: 3.3V
Output current: 0.7A
Case: XDFN4
Mounting: SMD
Manufacturer series: NCP167
Kind of package: tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
товар відсутній
| FDS4672A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2322 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 81.5 грн |
| 6+ | 68.19 грн |
| 18+ | 50.95 грн |
| 25+ | 50.2 грн |
| 47+ | 47.96 грн |
| FDS8449 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 1513 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 75.85 грн |
| 8+ | 52.45 грн |
| 24+ | 36.72 грн |
| 64+ | 34.47 грн |
| MBRM120LT1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; DO216AA; reel,tape
Max. off-state voltage: 20V
Max. load current: 2A
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DO216AA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; DO216AA; reel,tape
Max. off-state voltage: 20V
Max. load current: 2A
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DO216AA
на замовлення 540 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 24.21 грн |
| 21+ | 18.43 грн |
| 73+ | 12.06 грн |
| 201+ | 11.39 грн |
| 500+ | 10.94 грн |
| 74VCX08BQX |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; DQFN14; VCX; 1.2÷3.6VDC; VCX
Technology: CMOS
Case: DQFN14
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: VCX
Operating temperature: -40...85°C
Number of channels: 4
Supply voltage: 1.2...3.6V DC
Kind of gate: AND
Type of integrated circuit: digital
Number of inputs: 2
Family: VCX
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; DQFN14; VCX; 1.2÷3.6VDC; VCX
Technology: CMOS
Case: DQFN14
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: VCX
Operating temperature: -40...85°C
Number of channels: 4
Supply voltage: 1.2...3.6V DC
Kind of gate: AND
Type of integrated circuit: digital
Number of inputs: 2
Family: VCX
товар відсутній
| 74VCX08MTCX |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; VCX; 1.2÷3.6VDC; -40÷85°C
Case: TSSOP14
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: VCX
Operating temperature: -40...85°C
Number of channels: quad; 4
Supply voltage: 1.2...3.6V DC
Kind of gate: AND
Type of integrated circuit: digital
Quiescent current: 20µA
Number of inputs: 2
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; VCX; 1.2÷3.6VDC; -40÷85°C
Case: TSSOP14
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: VCX
Operating temperature: -40...85°C
Number of channels: quad; 4
Supply voltage: 1.2...3.6V DC
Kind of gate: AND
Type of integrated circuit: digital
Quiescent current: 20µA
Number of inputs: 2
товар відсутній
| MM3Z4V3B |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 4.3V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 1V
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 2.7µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 4.3V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 1V
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 2.7µA
товар відсутній
| MM3Z4V3C |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 4.3V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 1V
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 2.7µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 4.3V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 1V
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 2.7µA
товар відсутній
| MM3Z4V3ST1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
на замовлення 1550 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 2.93 грн |
| 225+ | 1.73 грн |
| 500+ | 1.56 грн |
| 725+ | 1.24 грн |
| MM3Z4V3T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
товар відсутній
| SZMM3Z4V3ST1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
товар відсутній
| SZMM3Z4V3T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
товар відсутній
| 2SD1048-6-TB-E |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.7A; 0.2W; SC59
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Frequency: 250MHz
Collector-emitter voltage: 15V
Current gain: 200...400
Collector current: 0.7A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.7A; 0.2W; SC59
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Frequency: 250MHz
Collector-emitter voltage: 15V
Current gain: 200...400
Collector current: 0.7A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
товар відсутній
| 74LVT244MTC |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
товар відсутній
| 74LVT244MTCX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
товар відсутній
| MC74LVX04DR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Family: LVX
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Family: LVX
товар відсутній
| MC74LVX04DTR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Family: LVX
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Family: LVX
товар відсутній
| MMBZ27VCLT1G |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 27V; 1A; 40W; double,common cathode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 27V
Max. forward impulse current: 1A
Peak pulse power dissipation: 40W
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 22V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Kind of package: reel; tape
Tolerance: ±5%
Category: Transil diodes - arrays
Description: Diode: TVS array; 27V; 1A; 40W; double,common cathode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 27V
Max. forward impulse current: 1A
Peak pulse power dissipation: 40W
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 22V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Kind of package: reel; tape
Tolerance: ±5%
товар відсутній
| SZMMBZ27VCLT1G |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 27V; 1A; 40W; double,common cathode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 27V
Max. forward impulse current: 1A
Peak pulse power dissipation: 40W
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 22V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
Category: Transil diodes - arrays
Description: Diode: TVS array; 27V; 1A; 40W; double,common cathode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 27V
Max. forward impulse current: 1A
Peak pulse power dissipation: 40W
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 22V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
товар відсутній
| MC74AC10DG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOIC14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOIC14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
на замовлення 135 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 66.98 грн |
| 10+ | 51.03 грн |
| 27+ | 32.9 грн |
| 73+ | 31.11 грн |
| MC74AC10DR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOIC14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOIC14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
товар відсутній
| MC74AC4040DG |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; 12-stage,asynchronous reset,binary ripple counter
Type of integrated circuit: digital
Kind of integrated circuit: 12-stage; asynchronous reset; binary ripple counter
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: SOIC16
Family: AC
Supply voltage: 2...6V DC
Kind of package: tube
Operating temperature: -40...85°C
Category: Counters/dividers
Description: IC: digital; 12-stage,asynchronous reset,binary ripple counter
Type of integrated circuit: digital
Kind of integrated circuit: 12-stage; asynchronous reset; binary ripple counter
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: SOIC16
Family: AC
Supply voltage: 2...6V DC
Kind of package: tube
Operating temperature: -40...85°C
на замовлення 33 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 186.4 грн |
| 8+ | 117.04 грн |
| 21+ | 110.66 грн |
| MC74AC4040DR2G |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; 12-stage,asynchronous reset,binary ripple counter
Type of integrated circuit: digital
Kind of integrated circuit: 12-stage; asynchronous reset; binary ripple counter
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: SOIC16
Family: AC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Category: Counters/dividers
Description: IC: digital; 12-stage,asynchronous reset,binary ripple counter
Type of integrated circuit: digital
Kind of integrated circuit: 12-stage; asynchronous reset; binary ripple counter
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: SOIC16
Family: AC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
товар відсутній
| 1N5235BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; reel,tape; DO35; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; reel,tape; DO35; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
на замовлення 80 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 7.26 грн |
| 67+ | 5.62 грн |
| 80+ | 4.5 грн |
| NCP5109ADR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Output current: -500...250mA
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 160ns
Pulse fall time: 75ns
Voltage class: 200V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Output current: -500...250mA
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 160ns
Pulse fall time: 75ns
Voltage class: 200V
товар відсутній