| Фото | Назва | Виробник | Інформація |
Доступність |
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MC74HC30ADTR2G | ONSEMI |
 Category: Gates, invertersDescription: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 8 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC |
товару немає в наявності |
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| SBRB1045G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 10A; D2PAK; tube Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 0.84V Max. forward impulse current: 150A Kind of package: tube |
товару немає в наявності |
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| SBRB1045T4G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 10A; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 0.84V Max. forward impulse current: 150A Kind of package: reel; tape |
товару немає в наявності |
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MMSZ36T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 36V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 36V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
товару немає в наявності |
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LM78L12ACZ | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; TO92; THT; bulk Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 12V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: bulk Number of channels: 1 |
товару немає в наявності |
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NCP785AH120T1G | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 10mA; SOT89; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 1.2V Output current: 10mA Case: SOT89 Mounting: SMD Manufacturer series: NCP785A Operating temperature: -40...85°C Tolerance: ±5% Number of channels: 1 Input voltage: 25...450V |
товару немає в наявності |
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SB540 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201; 5W; reel,tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Case: DO201 Max. forward impulse current: 150A Capacitance: 500pF Power dissipation: 5W Kind of package: reel; tape |
товару немає в наявності |
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| CAT25256VI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Clock frequency: 20MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 40ns Kind of package: reel; tape Operating voltage: 1.8...5.5V |
товару немає в наявності |
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ES1B | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1A Reverse recovery time: 15ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 7pF Case: SMA Max. forward voltage: 0.92V Max. forward impulse current: 30A Leakage current: 0.1mA Power dissipation: 1.47W Kind of package: reel; tape |
на замовлення 3975 шт: термін постачання 21-30 дні (днів) |
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BZX84B5V1LT1G | ONSEMI |
 Category: SMD Zener diodesDescription: Diode: Zener; 0.25W; 5.1V; SMD; reel,tape; SOT23; single diode; 2uA Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.25W Semiconductor structure: single diode Zener voltage: 5.1V Leakage current: 2µA Type of diode: Zener Tolerance: ±5% |
на замовлення 1715 шт: термін постачання 21-30 дні (днів) |
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BZX84B12LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 12V; SMD; reel,tape; SOT23; single diode; 0.1uA Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.25W Semiconductor structure: single diode Zener voltage: 12V Leakage current: 0.1µA Type of diode: Zener Tolerance: ±5% |
на замовлення 467 шт: термін постачання 21-30 дні (днів) |
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BZX84B3V3LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.25W Semiconductor structure: single diode Zener voltage: 3.3V Leakage current: 5µA Type of diode: Zener Tolerance: ±5% |
на замовлення 200 шт: термін постачання 21-30 дні (днів) |
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MC14071BDG | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C; tube Mounting: SMD Operating temperature: -55...125°C Supply voltage: 3...18V DC Delay time: 130ns Kind of package: tube Kind of gate: OR Family: HEF4000B Technology: CMOS Case: SO14 Number of inputs: 2 Type of integrated circuit: digital Number of channels: quad; 4 |
товару немає в наявності |
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MC14071BDR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Mounting: SMD Operating temperature: -55...125°C Supply voltage: 3...18V DC Delay time: 130ns Kind of package: reel; tape Kind of gate: OR Family: HEF4000B Technology: CMOS Case: SO14 Number of inputs: 2 Type of integrated circuit: digital Number of channels: quad; 4 |
товару немає в наявності |
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MC14071BDTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C Mounting: SMD Operating temperature: -55...125°C Supply voltage: 3...18V DC Delay time: 130ns Kind of package: reel; tape Kind of gate: OR Family: HEF4000B Technology: CMOS Case: TSSOP14 Number of inputs: 2 Type of integrated circuit: digital Number of channels: quad; 4 |
товару немає в наявності |
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2N6292G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 7A Power dissipation: 40W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 4MHz |
товару немає в наявності |
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| NJVNJD2873T4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 2A; 15W; TO252; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 2A Power dissipation: 15W Case: TO252 Current gain: 40...360 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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| 2SD1801S-TL-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 2A; 0.8W; TO252 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 2A Power dissipation: 0.8W Case: TO252 Current gain: 100...560 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
товару немає в наявності |
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MJE15035G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 350V; 4A; 50W; TO220AB Mounting: THT Kind of package: tube Power dissipation: 50W Polarisation: bipolar Case: TO220AB Frequency: 30MHz Collector-emitter voltage: 350V Collector current: 4A Type of transistor: PNP |
на замовлення 105 шт: термін постачання 21-30 дні (днів) |
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MC14512BDR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; data selector; Ch: 8; TTL; SMD; SO16; 3÷18VDC; reel,tape Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Type of integrated circuit: digital Number of channels: 8 Technology: TTL Kind of integrated circuit: data selector Case: SO16 Supply voltage: 3...18V DC |
на замовлення 1237 шт: термін постачання 21-30 дні (днів) |
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FDC608PZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.8A; 1.6W; SuperSOT-6 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Type of transistor: P-MOSFET On-state resistance: 43mΩ Drain current: -5.8A Drain-source voltage: -20V Gate charge: 23nC Case: SuperSOT-6 Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±12V Power dissipation: 1.6W |
на замовлення 3020 шт: термін постачання 21-30 дні (днів) |
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| MM3Z7V5B | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 7.5V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 7.5V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Max. forward voltage: 1V Case: SOD323F Semiconductor structure: single diode Leakage current: 0.9µA |
товару немає в наявності |
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| MM3Z7V5C | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 7.5V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 7.5V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 1V Case: SOD323F Semiconductor structure: single diode Leakage current: 0.9µA |
товару немає в наявності |
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| NTHL065N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 115A; 337W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 115A Power dissipation: 337W Case: TO247 Gate-source voltage: ±30V On-state resistance: 54mΩ Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhanced |
товару немає в наявності |
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| NTHL065N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 115A; 337W; TO247 Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 115A Power dissipation: 337W Case: TO247 Gate-source voltage: ±30V On-state resistance: 65mΩ Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhanced |
товару немає в наявності |
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| ES3A | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 3A Reverse recovery time: 30ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 45pF Case: SMC Max. forward voltage: 0.95V Max. forward impulse current: 100A Leakage current: 0.5mA Power dissipation: 1.66W Kind of package: reel; tape |
товару немає в наявності |
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| NCP12700ADNR2G | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 1÷2.8A; 185÷1000kHz Type of integrated circuit: PMIC Case: MSOP10 Mounting: SMD Number of channels: 1 Operating voltage: 9...28V DC Frequency: 185...1000kHz Output current: 1...2.8A Kind of integrated circuit: AC/DC switcher; PWM controller Topology: flyback; forward Operating temperature: -40...125°C |
товару немає в наявності |
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| NCP12700BDNR2G | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 1÷2.8A; 185÷1000kHz Type of integrated circuit: PMIC Case: MSOP10 Mounting: SMD Number of channels: 1 Operating voltage: 9...28V DC Frequency: 185...1000kHz Output current: 1...2.8A Kind of integrated circuit: AC/DC switcher; PWM controller Topology: flyback; forward Operating temperature: -40...125°C |
товару немає в наявності |
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| NCP12700BMTTXG | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 1÷2.8A; 185÷1000kHz Type of integrated circuit: PMIC Case: WQFN10 Mounting: SMD Number of channels: 1 Operating voltage: 9...28V DC Frequency: 185...1000kHz Output current: 1...2.8A Kind of integrated circuit: AC/DC switcher; PWM controller Topology: flyback; forward Operating temperature: -40...125°C |
товару немає в наявності |
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KSP92TA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz |
товару немає в наявності |
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| MJD350T4G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 300V; 0.5A; 15W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 15W Case: DPAK Current gain: 30...240 Mounting: SMD Kind of package: tube Frequency: 10MHz |
товару немає в наявності |
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| KSP92BU | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Mounting: THT Kind of package: bulk Frequency: 50MHz |
товару немає в наявності |
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MSB92WT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 25 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
товару немає в наявності |
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MMUN2133LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 4.7kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
на замовлення 179 шт: термін постачання 21-30 дні (днів) |
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SMUN5111DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 10kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
на замовлення 2940 шт: термін постачання 21-30 дні (днів) |
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| KSC5338D | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 450V; 5A; 75W; TO220AB Frequency: 11MHz Collector-emitter voltage: 450V Collector current: 5A Pulsed collector current: 10A Type of transistor: NPN Power dissipation: 75W Polarisation: bipolar Kind of package: bulk Features of semiconductor devices: integrated anti-parallel diode Mounting: THT Case: TO220AB |
товару немає в наявності |
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FDN302P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.4A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±12V On-state resistance: 84mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level |
на замовлення 2028 шт: термін постачання 21-30 дні (днів) |
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FDP075N15A-F102 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 150V Drain current: 92A Power dissipation: 333W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhanced |
на замовлення 34 шт: термін постачання 21-30 дні (днів) |
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HCPL3700 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4kbps; DIP8; 3kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Transfer rate: 4kbps Case: DIP8 Slew rate: 3kV/μs |
товару немає в наявності |
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MMSZ4702T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode Semiconductor structure: single diode Zener voltage: 15V Leakage current: 50nA Power dissipation: 0.5W Kind of package: reel; tape Type of diode: Zener Mounting: SMD Case: SOD123 Tolerance: ±5% |
на замовлення 1303 шт: термін постачання 21-30 дні (днів) |
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MMSZ4704T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 17V; SMD; reel,tape; SOD123; single diode Semiconductor structure: single diode Zener voltage: 17V Leakage current: 50nA Power dissipation: 0.5W Kind of package: reel; tape Type of diode: Zener Mounting: SMD Case: SOD123 Tolerance: ±5% |
на замовлення 3120 шт: термін постачання 21-30 дні (днів) |
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MMSZ4707T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 20V; SMD; reel,tape; SOD123; single diode Semiconductor structure: single diode Zener voltage: 20V Leakage current: 10nA Power dissipation: 0.5W Kind of package: reel; tape Type of diode: Zener Mounting: SMD Case: SOD123 Tolerance: ±5% |
на замовлення 2200 шт: термін постачання 21-30 дні (днів) |
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MC78LC50NTRG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TSOP5; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.038V Output voltage: 5V Output current: 0.1A Case: TSOP5 Mounting: SMD Manufacturer series: MC78LC00 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2.5% Number of channels: 1 Input voltage: 6...12V |
товару немає в наявності |
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| FDMC9430L-F085 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 12A; 11.4W; Power33 Polarisation: unipolar Mounting: SMD Power dissipation: 11.4W Kind of package: reel; tape Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±12V Case: Power33 Drain-source voltage: 40V Drain current: 12A On-state resistance: 13mΩ Type of transistor: N-MOSFET x2 |
товару немає в наявності |
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GBU4K | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
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RGF1G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 8.5pF Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Power dissipation: 1.76W Kind of package: reel; tape |
на замовлення 3512 шт: термін постачання 21-30 дні (днів) |
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RGF1B | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 8.5pF Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Power dissipation: 1.76W Kind of package: reel; tape |
товару немає в наявності |
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RGF1A | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 8.5pF Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Power dissipation: 1.76W Kind of package: reel; tape |
товару немає в наявності |
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RGF1D | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 8.5pF Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Power dissipation: 1.76W Kind of package: reel; tape |
товару немає в наявності |
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RGF1J | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 250ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 8.5pF Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Power dissipation: 1.76W Kind of package: reel; tape |
товару немає в наявності |
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RGF1M | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 8.5pF Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Power dissipation: 1.76W Kind of package: reel; tape |
товару немає в наявності |
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NRVRGF1J | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 250ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Power dissipation: 1.76W Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
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NRVRGF1M | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1000V; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Power dissipation: 1.76W Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
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BAS29 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 90V; 0.2A; 50ns; SOT23; Ufmax: 1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 90V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1V Max. load current: 0.25A Kind of package: reel; tape |
на замовлення 34 шт: термін постачання 21-30 дні (днів) |
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MMUN2216LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ |
на замовлення 6220 шт: термін постачання 21-30 дні (днів) |
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SMMUN2214LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23 Current gain: 80...140 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
на замовлення 243 шт: термін постачання 21-30 дні (днів) |
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NSVMMUN2212LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23 Current gain: 60...100 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Application: automotive industry Base-emitter resistor: 22kΩ |
на замовлення 2460 шт: термін постачання 21-30 дні (днів) |
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MMUN2212LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
товару немає в наявності |
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MMUN2217LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 4.7kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23 Current gain: 35...60 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 10kΩ |
товару немає в наявності |
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MMUN2211LT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23 Current gain: 35...60 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
товару немає в наявності |
| MC74HC30ADTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
товару немає в наявності
| SBRB1045G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; D2PAK; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 0.84V
Max. forward impulse current: 150A
Kind of package: tube
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; D2PAK; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 0.84V
Max. forward impulse current: 150A
Kind of package: tube
товару немає в наявності
| SBRB1045T4G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 0.84V
Max. forward impulse current: 150A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 0.84V
Max. forward impulse current: 150A
Kind of package: reel; tape
товару немає в наявності
| MMSZ36T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 36V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 36V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
товару немає в наявності
| LM78L12ACZ |
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Виробник: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Number of channels: 1
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Number of channels: 1
товару немає в наявності
| NCP785AH120T1G |
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Виробник: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 10mA; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.2V
Output current: 10mA
Case: SOT89
Mounting: SMD
Manufacturer series: NCP785A
Operating temperature: -40...85°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 25...450V
Category: Unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 10mA; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.2V
Output current: 10mA
Case: SOT89
Mounting: SMD
Manufacturer series: NCP785A
Operating temperature: -40...85°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 25...450V
товару немає в наявності
| SB540 |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201; 5W; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 500pF
Power dissipation: 5W
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201; 5W; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 500pF
Power dissipation: 5W
Kind of package: reel; tape
товару немає в наявності
| CAT25256VI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
товару немає в наявності
| ES1B |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 15ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 7pF
Case: SMA
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Leakage current: 0.1mA
Power dissipation: 1.47W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 15ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 7pF
Case: SMA
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Leakage current: 0.1mA
Power dissipation: 1.47W
Kind of package: reel; tape
на замовлення 3975 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 27.87 грн |
| 24+ | 15.52 грн |
| 100+ | 8.28 грн |
| 128+ | 6.73 грн |
| 353+ | 6.36 грн |
| 500+ | 6.21 грн |
| 1000+ | 6.14 грн |
| BZX84B5V1LT1G | |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 5.1V; SMD; reel,tape; SOT23; single diode; 2uA
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.25W
Semiconductor structure: single diode
Zener voltage: 5.1V
Leakage current: 2µA
Type of diode: Zener
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 5.1V; SMD; reel,tape; SOT23; single diode; 2uA
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.25W
Semiconductor structure: single diode
Zener voltage: 5.1V
Leakage current: 2µA
Type of diode: Zener
Tolerance: ±5%
на замовлення 1715 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 11.94 грн |
| 70+ | 5.32 грн |
| 80+ | 4.66 грн |
| 117+ | 3.16 грн |
| 137+ | 2.71 грн |
| 500+ | 1.97 грн |
| 555+ | 1.55 грн |
| 1525+ | 1.46 грн |
| BZX84B12LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 12V; SMD; reel,tape; SOT23; single diode; 0.1uA
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.25W
Semiconductor structure: single diode
Zener voltage: 12V
Leakage current: 0.1µA
Type of diode: Zener
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 12V; SMD; reel,tape; SOT23; single diode; 0.1uA
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.25W
Semiconductor structure: single diode
Zener voltage: 12V
Leakage current: 0.1µA
Type of diode: Zener
Tolerance: ±5%
на замовлення 467 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 13.53 грн |
| 43+ | 8.72 грн |
| 100+ | 4.11 грн |
| BZX84B3V3LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.25W
Semiconductor structure: single diode
Zener voltage: 3.3V
Leakage current: 5µA
Type of diode: Zener
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.25W
Semiconductor structure: single diode
Zener voltage: 3.3V
Leakage current: 5µA
Type of diode: Zener
Tolerance: ±5%
на замовлення 200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 8.76 грн |
| 54+ | 6.88 грн |
| 70+ | 5.35 грн |
| 111+ | 3.35 грн |
| MC14071BDG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C; tube
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Delay time: 130ns
Kind of package: tube
Kind of gate: OR
Family: HEF4000B
Technology: CMOS
Case: SO14
Number of inputs: 2
Type of integrated circuit: digital
Number of channels: quad; 4
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C; tube
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Delay time: 130ns
Kind of package: tube
Kind of gate: OR
Family: HEF4000B
Technology: CMOS
Case: SO14
Number of inputs: 2
Type of integrated circuit: digital
Number of channels: quad; 4
товару немає в наявності
| MC14071BDR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Delay time: 130ns
Kind of package: reel; tape
Kind of gate: OR
Family: HEF4000B
Technology: CMOS
Case: SO14
Number of inputs: 2
Type of integrated circuit: digital
Number of channels: quad; 4
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Delay time: 130ns
Kind of package: reel; tape
Kind of gate: OR
Family: HEF4000B
Technology: CMOS
Case: SO14
Number of inputs: 2
Type of integrated circuit: digital
Number of channels: quad; 4
товару немає в наявності
| MC14071BDTR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Delay time: 130ns
Kind of package: reel; tape
Kind of gate: OR
Family: HEF4000B
Technology: CMOS
Case: TSSOP14
Number of inputs: 2
Type of integrated circuit: digital
Number of channels: quad; 4
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Delay time: 130ns
Kind of package: reel; tape
Kind of gate: OR
Family: HEF4000B
Technology: CMOS
Case: TSSOP14
Number of inputs: 2
Type of integrated circuit: digital
Number of channels: quad; 4
товару немає в наявності
| 2N6292G | |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 7A
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 7A
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 4MHz
товару немає в наявності
| NJVNJD2873T4G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 15W; TO252; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 15W
Case: TO252
Current gain: 40...360
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 15W; TO252; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 15W
Case: TO252
Current gain: 40...360
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 52.55 грн |
| 11+ | 34.45 грн |
| 25+ | 30.16 грн |
| 32+ | 26.91 грн |
| 88+ | 25.51 грн |
| 500+ | 25.28 грн |
| 2SD1801S-TL-E |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.8W; TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.8W
Case: TO252
Current gain: 100...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.8W; TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.8W
Case: TO252
Current gain: 100...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
товару немає в наявності
| MJE15035G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 4A; 50W; TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 50W
Polarisation: bipolar
Case: TO220AB
Frequency: 30MHz
Collector-emitter voltage: 350V
Collector current: 4A
Type of transistor: PNP
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 4A; 50W; TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 50W
Polarisation: bipolar
Case: TO220AB
Frequency: 30MHz
Collector-emitter voltage: 350V
Collector current: 4A
Type of transistor: PNP
на замовлення 105 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 99.06 грн |
| 10+ | 86.5 грн |
| 12+ | 75.41 грн |
| 32+ | 70.97 грн |
| MC14512BDR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; TTL; SMD; SO16; 3÷18VDC; reel,tape
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 8
Technology: TTL
Kind of integrated circuit: data selector
Case: SO16
Supply voltage: 3...18V DC
Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; TTL; SMD; SO16; 3÷18VDC; reel,tape
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 8
Technology: TTL
Kind of integrated circuit: data selector
Case: SO16
Supply voltage: 3...18V DC
на замовлення 1237 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 34 грн |
| 15+ | 25.65 грн |
| 25+ | 21.44 грн |
| 45+ | 19.37 грн |
| 122+ | 18.33 грн |
| 500+ | 17.6 грн |
| FDC608PZ |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.8A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 43mΩ
Drain current: -5.8A
Drain-source voltage: -20V
Gate charge: 23nC
Case: SuperSOT-6
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±12V
Power dissipation: 1.6W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.8A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 43mΩ
Drain current: -5.8A
Drain-source voltage: -20V
Gate charge: 23nC
Case: SuperSOT-6
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±12V
Power dissipation: 1.6W
на замовлення 3020 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 37.42 грн |
| 14+ | 28.31 грн |
| 50+ | 22.62 грн |
| 56+ | 15.47 грн |
| 153+ | 14.63 грн |
| 1500+ | 14.34 грн |
| MM3Z7V5B |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 7.5V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 1V
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 0.9µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 7.5V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 1V
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 0.9µA
товару немає в наявності
| MM3Z7V5C |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 7.5V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 1V
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 0.9µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 7.5V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 1V
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 0.9µA
товару немає в наявності
| NTHL065N65S3HF |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 115A; 337W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 115A
Power dissipation: 337W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 115A; 337W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 115A
Power dissipation: 337W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
товару немає в наявності
| NTHL065N65S3F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 115A; 337W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 115A
Power dissipation: 337W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 115A; 337W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 115A
Power dissipation: 337W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
товару немає в наявності
| ES3A |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 45pF
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Leakage current: 0.5mA
Power dissipation: 1.66W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 45pF
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Leakage current: 0.5mA
Power dissipation: 1.66W
Kind of package: reel; tape
товару немає в наявності
| NCP12700ADNR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1÷2.8A; 185÷1000kHz
Type of integrated circuit: PMIC
Case: MSOP10
Mounting: SMD
Number of channels: 1
Operating voltage: 9...28V DC
Frequency: 185...1000kHz
Output current: 1...2.8A
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback; forward
Operating temperature: -40...125°C
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1÷2.8A; 185÷1000kHz
Type of integrated circuit: PMIC
Case: MSOP10
Mounting: SMD
Number of channels: 1
Operating voltage: 9...28V DC
Frequency: 185...1000kHz
Output current: 1...2.8A
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback; forward
Operating temperature: -40...125°C
товару немає в наявності
| NCP12700BDNR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1÷2.8A; 185÷1000kHz
Type of integrated circuit: PMIC
Case: MSOP10
Mounting: SMD
Number of channels: 1
Operating voltage: 9...28V DC
Frequency: 185...1000kHz
Output current: 1...2.8A
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback; forward
Operating temperature: -40...125°C
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1÷2.8A; 185÷1000kHz
Type of integrated circuit: PMIC
Case: MSOP10
Mounting: SMD
Number of channels: 1
Operating voltage: 9...28V DC
Frequency: 185...1000kHz
Output current: 1...2.8A
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback; forward
Operating temperature: -40...125°C
товару немає в наявності
| NCP12700BMTTXG |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1÷2.8A; 185÷1000kHz
Type of integrated circuit: PMIC
Case: WQFN10
Mounting: SMD
Number of channels: 1
Operating voltage: 9...28V DC
Frequency: 185...1000kHz
Output current: 1...2.8A
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback; forward
Operating temperature: -40...125°C
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1÷2.8A; 185÷1000kHz
Type of integrated circuit: PMIC
Case: WQFN10
Mounting: SMD
Number of channels: 1
Operating voltage: 9...28V DC
Frequency: 185...1000kHz
Output current: 1...2.8A
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback; forward
Operating temperature: -40...125°C
товару немає в наявності
| KSP92TA |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
товару немає в наявності
| MJD350T4G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 15W
Case: DPAK
Current gain: 30...240
Mounting: SMD
Kind of package: tube
Frequency: 10MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 15W
Case: DPAK
Current gain: 30...240
Mounting: SMD
Kind of package: tube
Frequency: 10MHz
товару немає в наявності
| KSP92BU |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
товару немає в наявності
| MSB92WT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 25
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 25
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
товару немає в наявності
| MMUN2133LT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
на замовлення 179 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 10.35 грн |
| 74+ | 5.03 грн |
| 130+ | 2.85 грн |
| SMUN5111DW1T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
на замовлення 2940 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 12.58 грн |
| 40+ | 10.35 грн |
| 100+ | 9.17 грн |
| 110+ | 8.13 грн |
| 290+ | 7.69 грн |
| KSC5338D |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 75W; TO220AB
Frequency: 11MHz
Collector-emitter voltage: 450V
Collector current: 5A
Pulsed collector current: 10A
Type of transistor: NPN
Power dissipation: 75W
Polarisation: bipolar
Kind of package: bulk
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO220AB
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 75W; TO220AB
Frequency: 11MHz
Collector-emitter voltage: 450V
Collector current: 5A
Pulsed collector current: 10A
Type of transistor: NPN
Power dissipation: 75W
Polarisation: bipolar
Kind of package: bulk
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO220AB
товару немає в наявності
| FDN302P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±12V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±12V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 2028 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 33.44 грн |
| 17+ | 22.03 грн |
| 80+ | 10.82 грн |
| 218+ | 10.23 грн |
| 500+ | 10.05 грн |
| 1000+ | 9.83 грн |
| FDP075N15A-F102 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 92A
Power dissipation: 333W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 92A
Power dissipation: 333W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
на замовлення 34 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 394.1 грн |
| 3+ | 325.29 грн |
| 8+ | 307.54 грн |
| HCPL3700 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4kbps; DIP8; 3kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Transfer rate: 4kbps
Case: DIP8
Slew rate: 3kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4kbps; DIP8; 3kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Transfer rate: 4kbps
Case: DIP8
Slew rate: 3kV/μs
товару немає в наявності
| MMSZ4702T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Semiconductor structure: single diode
Zener voltage: 15V
Leakage current: 50nA
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOD123
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Semiconductor structure: single diode
Zener voltage: 15V
Leakage current: 50nA
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOD123
Tolerance: ±5%
на замовлення 1303 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 10.35 грн |
| 63+ | 5.91 грн |
| 97+ | 3.84 грн |
| 116+ | 3.21 грн |
| 500+ | 2.21 грн |
| 551+ | 1.55 грн |
| MMSZ4704T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 17V; SMD; reel,tape; SOD123; single diode
Semiconductor structure: single diode
Zener voltage: 17V
Leakage current: 50nA
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOD123
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 17V; SMD; reel,tape; SOD123; single diode
Semiconductor structure: single diode
Zener voltage: 17V
Leakage current: 50nA
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOD123
Tolerance: ±5%
на замовлення 3120 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 105+ | 3.85 грн |
| 175+ | 2.17 грн |
| 500+ | 1.91 грн |
| 520+ | 1.66 грн |
| 1425+ | 1.57 грн |
| MMSZ4707T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; reel,tape; SOD123; single diode
Semiconductor structure: single diode
Zener voltage: 20V
Leakage current: 10nA
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOD123
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; reel,tape; SOD123; single diode
Semiconductor structure: single diode
Zener voltage: 20V
Leakage current: 10nA
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOD123
Tolerance: ±5%
на замовлення 2200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 13.53 грн |
| 41+ | 9.09 грн |
| 59+ | 6.33 грн |
| 100+ | 4.42 грн |
| 250+ | 3.54 грн |
| 443+ | 1.94 грн |
| 1217+ | 1.83 грн |
| MC78LC50NTRG |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TSOP5; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.038V
Output voltage: 5V
Output current: 0.1A
Case: TSOP5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 6...12V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TSOP5; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.038V
Output voltage: 5V
Output current: 0.1A
Case: TSOP5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 6...12V
товару немає в наявності
| FDMC9430L-F085 |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 12A; 11.4W; Power33
Polarisation: unipolar
Mounting: SMD
Power dissipation: 11.4W
Kind of package: reel; tape
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: Power33
Drain-source voltage: 40V
Drain current: 12A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 12A; 11.4W; Power33
Polarisation: unipolar
Mounting: SMD
Power dissipation: 11.4W
Kind of package: reel; tape
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: Power33
Drain-source voltage: 40V
Drain current: 12A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET x2
товару немає в наявності
| GBU4K |
|
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товару немає в наявності
| RGF1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
на замовлення 3512 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 24.68 грн |
| 19+ | 19.81 грн |
| 73+ | 11.93 грн |
| 199+ | 11.28 грн |
| 500+ | 10.79 грн |
| RGF1B |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
товару немає в наявності
| RGF1A |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
товару немає в наявності
| RGF1D |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
товару немає в наявності
| RGF1J |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
товару немає в наявності
| RGF1M |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
товару немає в наявності
| NRVRGF1J |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
| NRVRGF1M |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
| BAS29 | |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.2A; 50ns; SOT23; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1V
Max. load current: 0.25A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.2A; 50ns; SOT23; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1V
Max. load current: 0.25A
Kind of package: reel; tape
на замовлення 34 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 19.9 грн |
| 32+ | 11.83 грн |
| MMUN2216LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
на замовлення 6220 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 10.35 грн |
| 65+ | 5.77 грн |
| 105+ | 3.55 грн |
| 119+ | 3.12 грн |
| 500+ | 2.34 грн |
| 636+ | 1.35 грн |
| 1748+ | 1.28 грн |
| SMMUN2214LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
на замовлення 243 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.51 грн |
| 90+ | 4.14 грн |
| 100+ | 3.72 грн |
| NSVMMUN2212LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Current gain: 60...100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Current gain: 60...100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
на замовлення 2460 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.51 грн |
| 90+ | 4.14 грн |
| 100+ | 3.72 грн |
| 295+ | 2.93 грн |
| 810+ | 2.77 грн |
| MMUN2212LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
товару немає в наявності
| MMUN2217LT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
товару немає в наявності
| MMUN2211LT3G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
товару немає в наявності