| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FDP52N20 | ONSEMI |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 33A; 357W; TO220AB Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 200V Drain current: 33A Power dissipation: 357W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 49mΩ Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
|||||||||||||||||
 |
FCD900N60Z | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 13.5A; 52W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.5A Pulsed drain current: 13.5A Power dissipation: 52W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
|||||||||||||||||
| NCP45540IMNTWG-H | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 14A; Ch: 1; N-Channel; SMD; DFN12 Kind of package: reel; tape Number of channels: 1 Kind of output: N-Channel Active logical level: high Control voltage: 0.5...13.5V DC Kind of integrated circuit: high-side Mounting: SMD Case: DFN12 Supply voltage: 3...5.5V DC On-state resistance: 12.1mΩ Output current: 14A Type of integrated circuit: power switch |
товар відсутній |
||||||||||||||||||
| NCP45540IMNTWG-L | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 14A; Ch: 1; N-Channel; SMD; DFN12 Kind of package: reel; tape Number of channels: 1 Kind of output: N-Channel Active logical level: low Control voltage: 0.5...13.5V DC Kind of integrated circuit: high-side Mounting: SMD Case: DFN12 Supply voltage: 3...5.5V DC On-state resistance: 12.1mΩ Output current: 14A Type of integrated circuit: power switch |
товар відсутній |
||||||||||||||||||
| NCP45541IMNTWG-H | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 14A; Ch: 1; N-Channel; SMD; DFN12 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 14A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: DFN12 On-state resistance: 12.1mΩ Kind of package: reel; tape Supply voltage: 3...5.5V DC Active logical level: high Control voltage: 0.5...13.5V DC |
товар відсутній |
||||||||||||||||||
| NCP45541IMNTWG-L | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 14A; Ch: 1; N-Channel; SMD; DFN12 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 14A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: DFN12 On-state resistance: 12.1mΩ Kind of package: reel; tape Supply voltage: 3...5.5V DC Active logical level: low Control voltage: 0.5...13.5V DC |
товар відсутній |
||||||||||||||||||
| NCP45770IMN24TWG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 20A; Ch: 1; N-Channel; SMD; DFN12 Kind of package: reel; tape Number of channels: 1 Kind of output: N-Channel Active logical level: high Control voltage: 3...24V DC Kind of integrated circuit: high-side Mounting: SMD Case: DFN12 Supply voltage: 3...5.5V DC On-state resistance: 4.2mΩ Output current: 20A Type of integrated circuit: power switch |
товар відсутній |
||||||||||||||||||
| CAV25020YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 2.5÷5.5V; 10MHz Case: TSSOP8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 256x8bit Access time: 35ns Clock frequency: 10MHz Kind of interface: serial Memory: 2kb EEPROM Operating voltage: 2.5...5.5V |
товар відсутній |
||||||||||||||||||
 |
NC7SP57P6X | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND,configurable,NAND,NOR,OR,XNOR; Ch: 1; IN: 3; CMOS Type of integrated circuit: digital Kind of gate: AND; configurable; NAND; NOR; OR; XNOR Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: SC88 Manufacturer series: TinyLogic Supply voltage: 0.9...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: NC |
на замовлення 2850 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
| 74AUP1G58FHX | ONSEMI |
Category: Gates, inverters Description: IC: digital; inverter; Ch: 1; IN: 3; CMOS; SMD; MicroPak6; AUP; AUP Type of integrated circuit: digital Kind of integrated circuit: inverter Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: MicroPak6 Manufacturer series: AUP Supply voltage: 0.8...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AUP |
товар відсутній |
||||||||||||||||||
| 74AUP1G58L6X | ONSEMI |
Category: Gates, inverters Description: IC: digital; inverter; Ch: 1; IN: 3; CMOS; SMD; MicroPak6; AUP; AUP Type of integrated circuit: digital Kind of integrated circuit: inverter Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: MicroPak6 Manufacturer series: AUP Supply voltage: 0.8...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AUP |
товар відсутній |
||||||||||||||||||
| 74AUP1G56L6X | ONSEMI |
Category: Gates, inverters Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; MicroPak6; AUP Type of integrated circuit: digital Kind of integrated circuit: buffer; inverter Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: MicroPak6 Manufacturer series: AUP Supply voltage: 0.8...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: open drain Family: AUP |
товар відсутній |
||||||||||||||||||
| 74AUP1G57L6X | ONSEMI |
Category: Gates, inverters Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; MicroPak6; AUP Type of integrated circuit: digital Kind of integrated circuit: buffer; inverter Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: MicroPak6 Manufacturer series: AUP Supply voltage: 0.8...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AUP |
товар відсутній |
||||||||||||||||||
| 74AUP1G59L6X | ONSEMI |
Category: Gates, inverters Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; MicroPak6; AUP Type of integrated circuit: digital Kind of integrated circuit: buffer; inverter Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: MicroPak6 Manufacturer series: AUP Supply voltage: 0.8...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: open drain Family: AUP |
товар відсутній |
||||||||||||||||||
 |
FXLP34P5X | ONSEMI |
Category: Level translators Description: IC: digital; translator; Ch: 1; 1÷3.6VDC; SMD; SC70; -40÷85°C; IN: 1 Type of integrated circuit: digital Kind of integrated circuit: translator Number of channels: 1 Supply voltage: 1...3.6V DC Mounting: SMD Case: SC70 Operating temperature: -40...85°C Number of inputs: 1 |
товар відсутній |
|||||||||||||||||
| KSC2328AYTA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 30V; 2A; 1W; TO92L Kind of package: Ammo Pack Frequency: 120MHz Collector-emitter voltage: 30V Current gain: 160...320 Collector current: 2A Type of transistor: NPN Power dissipation: 1W Polarisation: bipolar Mounting: THT Case: TO92L |
товар відсутній |
||||||||||||||||||
 |
M74VHCT126ADTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; TTL; SMD; TSSOP14; 40uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Technology: TTL Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 40µA |
товар відсутній |
|||||||||||||||||
 |
MC74VHCT126ADR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; TTL; SMD; SO14; VHCT; 40uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Technology: TTL Mounting: SMD Case: SO14 Manufacturer series: VHCT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 40µA |
товар відсутній |
|||||||||||||||||
| NCP715MX50TBG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 50mA; XDFN6; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.35V Output voltage: 5V Output current: 50mA Case: XDFN6 Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...24V Manufacturer series: NCP715 |
товар відсутній |
||||||||||||||||||
| MM3Z5V1C | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 5.1V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD323F Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1.8µA Max. forward voltage: 1V |
товар відсутній |
||||||||||||||||||
 |
MM5Z5V1T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD523 Mounting: SMD Tolerance: ±6% Semiconductor structure: single diode |
товар відсутній |
|||||||||||||||||
|
|
BDW42G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 80V; 15A; 85W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 15A Power dissipation: 85W Case: TO220AB Mounting: THT Kind of package: tube |
товар відсутній |
|||||||||||||||||
|
|
BDW47G | ONSEMI |
Category: PNP THT Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 100V; 15A; 85W; TO220AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 15A Power dissipation: 85W Case: TO220AB Mounting: THT Kind of package: tube |
товар відсутній |
|||||||||||||||||
| KSC2690AYS | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 160V; 1.2A; 1.2W; TO126ISO Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1.2A Power dissipation: 1.2W Case: TO126ISO Pulsed collector current: 2.5A Current gain: 160...320 Mounting: THT Kind of package: bulk Frequency: 155MHz |
товар відсутній |
||||||||||||||||||
| KSC2690AYSTU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 160V; 1.2A; 1.2W; TO126ISO Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1.2A Power dissipation: 1.2W Case: TO126ISO Pulsed collector current: 2.5A Current gain: 160...320 Mounting: THT Kind of package: tube Frequency: 155MHz |
товар відсутній |
||||||||||||||||||
 |
NC7SV126P5X | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC70-5; 0.9÷3.6VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Mounting: SMD Case: SC70-5 Supply voltage: 0.9...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 0.9µA |
товар відсутній |
|||||||||||||||||
| NTD6416ANLT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 71W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 13A Power dissipation: 71W Case: DPAK Gate-source voltage: ±20V On-state resistance: 74mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||||
| NTD6416ANT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 71W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 11A Power dissipation: 71W Case: DPAK Gate-source voltage: ±20V On-state resistance: 81mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||||
 |
MC14174BDR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 6; TTL; SMD; SO16; reel,tape; 600uA Operating temperature: -55...125°C Case: SO16 Kind of package: reel; tape Trigger: positive-edge-triggered Technology: TTL Kind of integrated circuit: D flip-flop Mounting: SMD Supply voltage: 3...18V DC Type of integrated circuit: digital Number of channels: 6 Quiescent current: 600µA |
товар відсутній |
|||||||||||||||||
| FDMT80080DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 1453A; 156W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 160A Pulsed drain current: 1453A Power dissipation: 156W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 2.22mΩ Mounting: SMD Gate charge: 273nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||||
|
|
NCV7430D20R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; SO14; reel,tape Mounting: SMD Case: SO14 Operating temperature: -40...125°C Application: automotive industry; for LED applications Kind of package: reel; tape Kind of integrated circuit: transceiver Supply voltage: 5.5...18V DC Type of integrated circuit: interface Interface: LIN |
товар відсутній |
|||||||||||||||||
| FPF2595UCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C Mounting: SMD Case: WLCSP12 Kind of package: reel; tape Operating temperature: -40...85°C Supply voltage: 2.5...5.5V DC Active logical level: low Integrated circuit features: thermal protection; undervoltage protection On-state resistance: 40mΩ Type of integrated circuit: power switch Number of channels: 1 |
товар відсутній |
||||||||||||||||||
 |
NC7ST08M5X | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SOT23-5; 4.5÷5.5VDC; -40÷85°C Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Kind of gate: AND Mounting: SMD Case: SOT23-5 Number of inputs: 2 Type of integrated circuit: digital Number of channels: single; 1 Quiescent current: 10µA |
на замовлення 1263 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
| FFSH40120ADN-F155 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; 37W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A x2 Max. load current: 74A Power dissipation: 37W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 135A Max. forward voltage: 2.4V Leakage current: 0.4mA |
товар відсутній |
||||||||||||||||||
| NRVBS3200NT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 200V; 3A; SMB; reel,tape Mounting: SMD Max. off-state voltage: 200V Max. forward voltage: 0.86V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 100A Application: automotive industry Kind of package: reel; tape Type of diode: Schottky rectifying Case: SMB |
товар відсутній |
||||||||||||||||||
| KSC3265YMTF | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 25V; 0.8A; 0.2W; SOT23 Kind of package: reel; tape Collector-emitter voltage: 25V Current gain: 160...320 Collector current: 0.8A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Mounting: SMD Case: SOT23 Frequency: 120MHz |
на замовлення 2990 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||
| KSC2334YTU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 7A; 1.5W; TO220AB Mounting: THT Case: TO220AB Collector-emitter voltage: 100V Current gain: 120...240 Collector current: 7A Pulsed collector current: 15A Type of transistor: NPN Power dissipation: 1.5W Polarisation: bipolar Kind of package: tube |
товар відсутній |
||||||||||||||||||
 |
MMSZ5236BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 7.5V; SMD; reel,tape; SOD123; single diode Case: SOD123 Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Type of diode: Zener Semiconductor structure: single diode Zener voltage: 7.5V Power dissipation: 0.5W |
товар відсутній |
|||||||||||||||||
| FOD852300 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V; DIP4 Manufacturer series: FOD852 Type of optocoupler: optocoupler Mounting: THT Case: DIP4 Max. off-state voltage: 6V Collector-emitter voltage: 300V Number of channels: 1 Kind of output: Darlington Insulation voltage: 5kV CTR@If: 1000-15000%@1mA |
товар відсутній |
||||||||||||||||||
| KSC1008CYTA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Mounting: THT Case: TO92 Kind of package: Ammo Pack Power dissipation: 0.8W Polarisation: bipolar Frequency: 50MHz Collector-emitter voltage: 60V Current gain: 120...240 Collector current: 0.7A Type of transistor: NPN |
товар відсутній |
||||||||||||||||||
| KSC1008YBU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Mounting: THT Case: TO92 Kind of package: bulk Power dissipation: 0.8W Polarisation: bipolar Frequency: 50MHz Collector-emitter voltage: 60V Current gain: 120...240 Collector current: 0.7A Type of transistor: NPN |
товар відсутній |
||||||||||||||||||
| KSC1008YTA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Mounting: THT Case: TO92 Kind of package: Ammo Pack Power dissipation: 0.8W Polarisation: bipolar Frequency: 50MHz Collector-emitter voltage: 60V Current gain: 120...240 Collector current: 0.7A Type of transistor: NPN |
товар відсутній |
||||||||||||||||||
| FDMC8622 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 30A; 31W; WDFN8 Kind of package: reel; tape Drain-source voltage: 100V Drain current: 16A On-state resistance: 98mΩ Type of transistor: N-MOSFET Power dissipation: 31W Polarisation: unipolar Gate charge: 7.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A Mounting: SMD Case: WDFN8 |
товар відсутній |
||||||||||||||||||
| FDMS8622 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 16.5A; 31W; PQFN8 Kind of package: reel; tape Drain-source voltage: 100V Drain current: 16.5A On-state resistance: 97mΩ Type of transistor: N-MOSFET Power dissipation: 31W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PQFN8 |
товар відсутній |
||||||||||||||||||
| HMHAA280R2 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 50-0%@5mA Collector-emitter voltage: 80V Case: MFP4 Max. off-state voltage: 6V Manufacturer series: HMHAA280 |
товар відсутній |
||||||||||||||||||
| FDG327N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.5A Power dissipation: 0.42W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±8V On-state resistance: 0.115Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||||
 |
S1K | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 6.6pF Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 30A Power dissipation: 1.4W Kind of package: reel; tape |
на замовлення 3285 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
| FS8G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 8A; TO277; Ufmax: 0.845V; Ifsm: 230A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 8A Semiconductor structure: single diode Case: TO277 Max. forward voltage: 0.845V Max. forward impulse current: 230A Kind of package: reel; tape |
товар відсутній |
||||||||||||||||||
| FS8J | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 8A; TO277; Ufmax: 0.845V; Ifsm: 230A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Case: TO277 Max. forward voltage: 0.845V Max. forward impulse current: 230A Kind of package: reel; tape |
товар відсутній |
||||||||||||||||||
| FS8K | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 8A; TO277; Ufmax: 0.845V; Ifsm: 230A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 8A Semiconductor structure: single diode Case: TO277 Max. forward voltage: 0.845V Max. forward impulse current: 230A Kind of package: reel; tape |
товар відсутній |
||||||||||||||||||
| FS8M | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 8A; TO277; Ufmax: 0.845V; Ifsm: 230A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 8A Semiconductor structure: single diode Case: TO277 Max. forward voltage: 0.845V Max. forward impulse current: 230A Kind of package: reel; tape |
товар відсутній |
||||||||||||||||||
 |
S1BFL | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1A; 2us; SOD123F; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1A Reverse recovery time: 2µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 4pF Case: SOD123F Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape |
товар відсутній |
|||||||||||||||||
 |
2N7002 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
|||||||||||||||||
|
|
2N7002 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 100730 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
| FOD260L | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 5kV; 10Mbps; DIP8 Mounting: THT Case: DIP8 Max. off-state voltage: 5V Turn-on time: 22ns Turn-off time: 3ns Output voltage: 7V Number of channels: 1 Kind of output: logic Insulation voltage: 5kV Transfer rate: 10Mbps Slew rate: 50kV/μs Type of optocoupler: optocoupler |
товар відсутній |
||||||||||||||||||
| NC7WP02L8X | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; UQFN8; TinyLogic; -40÷85°C Type of integrated circuit: digital Kind of gate: NOR Number of channels: 2 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: UQFN8 Manufacturer series: TinyLogic Supply voltage: 0.9...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: NC |
товар відсутній |
||||||||||||||||||
| NC7WP08L8X | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 2; IN: 2; CMOS; SMD; UQFN8; TinyLogic; -40÷85°C Type of integrated circuit: digital Kind of gate: AND Number of channels: 2 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: UQFN8 Manufacturer series: TinyLogic Supply voltage: 0.9...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: NC |
товар відсутній |
||||||||||||||||||
| NC7WP125K8X | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; MO187,US8; 5uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 Technology: CMOS Mounting: SMD Case: MO187; US8 Supply voltage: 0.9...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 5µA Kind of output: 3-state |
товар відсутній |
||||||||||||||||||
| NC7WP125L8X | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer; Ch: 2; IN: 2; CMOS; SMD; UQFN8; TinyLogic Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer Number of channels: 2 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: UQFN8 Manufacturer series: TinyLogic Supply voltage: 0.9...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Family: NC |
товар відсутній |
||||||||||||||||||
| FDMS86181 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 78A; 125W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 78A Power dissipation: 125W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
| FDP52N20 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 33A; 357W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 33A
Power dissipation: 357W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 33A; 357W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 33A
Power dissipation: 357W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FCD900N60Z |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 13.5A; 52W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Pulsed drain current: 13.5A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 13.5A; 52W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Pulsed drain current: 13.5A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NCP45540IMNTWG-H |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 14A; Ch: 1; N-Channel; SMD; DFN12
Kind of package: reel; tape
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: DFN12
Supply voltage: 3...5.5V DC
On-state resistance: 12.1mΩ
Output current: 14A
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 14A; Ch: 1; N-Channel; SMD; DFN12
Kind of package: reel; tape
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: DFN12
Supply voltage: 3...5.5V DC
On-state resistance: 12.1mΩ
Output current: 14A
Type of integrated circuit: power switch
товар відсутній
| NCP45540IMNTWG-L |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 14A; Ch: 1; N-Channel; SMD; DFN12
Kind of package: reel; tape
Number of channels: 1
Kind of output: N-Channel
Active logical level: low
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: DFN12
Supply voltage: 3...5.5V DC
On-state resistance: 12.1mΩ
Output current: 14A
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 14A; Ch: 1; N-Channel; SMD; DFN12
Kind of package: reel; tape
Number of channels: 1
Kind of output: N-Channel
Active logical level: low
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: DFN12
Supply voltage: 3...5.5V DC
On-state resistance: 12.1mΩ
Output current: 14A
Type of integrated circuit: power switch
товар відсутній
| NCP45541IMNTWG-H |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 14A; Ch: 1; N-Channel; SMD; DFN12
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 14A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DFN12
On-state resistance: 12.1mΩ
Kind of package: reel; tape
Supply voltage: 3...5.5V DC
Active logical level: high
Control voltage: 0.5...13.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 14A; Ch: 1; N-Channel; SMD; DFN12
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 14A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DFN12
On-state resistance: 12.1mΩ
Kind of package: reel; tape
Supply voltage: 3...5.5V DC
Active logical level: high
Control voltage: 0.5...13.5V DC
товар відсутній
| NCP45541IMNTWG-L |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 14A; Ch: 1; N-Channel; SMD; DFN12
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 14A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DFN12
On-state resistance: 12.1mΩ
Kind of package: reel; tape
Supply voltage: 3...5.5V DC
Active logical level: low
Control voltage: 0.5...13.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 14A; Ch: 1; N-Channel; SMD; DFN12
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 14A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DFN12
On-state resistance: 12.1mΩ
Kind of package: reel; tape
Supply voltage: 3...5.5V DC
Active logical level: low
Control voltage: 0.5...13.5V DC
товар відсутній
| NCP45770IMN24TWG |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 20A; Ch: 1; N-Channel; SMD; DFN12
Kind of package: reel; tape
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Control voltage: 3...24V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: DFN12
Supply voltage: 3...5.5V DC
On-state resistance: 4.2mΩ
Output current: 20A
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 20A; Ch: 1; N-Channel; SMD; DFN12
Kind of package: reel; tape
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Control voltage: 3...24V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: DFN12
Supply voltage: 3...5.5V DC
On-state resistance: 4.2mΩ
Output current: 20A
Type of integrated circuit: power switch
товар відсутній
| CAV25020YE-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 2.5÷5.5V; 10MHz
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 256x8bit
Access time: 35ns
Clock frequency: 10MHz
Kind of interface: serial
Memory: 2kb EEPROM
Operating voltage: 2.5...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 2.5÷5.5V; 10MHz
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 256x8bit
Access time: 35ns
Clock frequency: 10MHz
Kind of interface: serial
Memory: 2kb EEPROM
Operating voltage: 2.5...5.5V
товар відсутній
| NC7SP57P6X |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND,configurable,NAND,NOR,OR,XNOR; Ch: 1; IN: 3; CMOS
Type of integrated circuit: digital
Kind of gate: AND; configurable; NAND; NOR; OR; XNOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SC88
Manufacturer series: TinyLogic
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: NC
Category: Gates, inverters
Description: IC: digital; AND,configurable,NAND,NOR,OR,XNOR; Ch: 1; IN: 3; CMOS
Type of integrated circuit: digital
Kind of gate: AND; configurable; NAND; NOR; OR; XNOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SC88
Manufacturer series: TinyLogic
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: NC
на замовлення 2850 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 25.02 грн |
| 18+ | 20.83 грн |
| 20+ | 18.58 грн |
| 25+ | 16.99 грн |
| 50+ | 14.3 грн |
| 100+ | 11.62 грн |
| 145+ | 5.81 грн |
| 399+ | 5.44 грн |
| 74AUP1G58FHX |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 3; CMOS; SMD; MicroPak6; AUP; AUP
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak6
Manufacturer series: AUP
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AUP
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 3; CMOS; SMD; MicroPak6; AUP; AUP
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak6
Manufacturer series: AUP
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AUP
товар відсутній
| 74AUP1G58L6X |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 3; CMOS; SMD; MicroPak6; AUP; AUP
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak6
Manufacturer series: AUP
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AUP
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 3; CMOS; SMD; MicroPak6; AUP; AUP
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak6
Manufacturer series: AUP
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AUP
товар відсутній
| 74AUP1G56L6X |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; MicroPak6; AUP
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak6
Manufacturer series: AUP
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: open drain
Family: AUP
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; MicroPak6; AUP
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak6
Manufacturer series: AUP
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: open drain
Family: AUP
товар відсутній
| 74AUP1G57L6X |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; MicroPak6; AUP
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak6
Manufacturer series: AUP
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AUP
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; MicroPak6; AUP
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak6
Manufacturer series: AUP
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AUP
товар відсутній
| 74AUP1G59L6X |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; MicroPak6; AUP
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak6
Manufacturer series: AUP
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: open drain
Family: AUP
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; MicroPak6; AUP
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak6
Manufacturer series: AUP
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: open drain
Family: AUP
товар відсутній
| FXLP34P5X |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; translator; Ch: 1; 1÷3.6VDC; SMD; SC70; -40÷85°C; IN: 1
Type of integrated circuit: digital
Kind of integrated circuit: translator
Number of channels: 1
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: SC70
Operating temperature: -40...85°C
Number of inputs: 1
Category: Level translators
Description: IC: digital; translator; Ch: 1; 1÷3.6VDC; SMD; SC70; -40÷85°C; IN: 1
Type of integrated circuit: digital
Kind of integrated circuit: translator
Number of channels: 1
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: SC70
Operating temperature: -40...85°C
Number of inputs: 1
товар відсутній
| KSC2328AYTA |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 2A; 1W; TO92L
Kind of package: Ammo Pack
Frequency: 120MHz
Collector-emitter voltage: 30V
Current gain: 160...320
Collector current: 2A
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
Mounting: THT
Case: TO92L
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 2A; 1W; TO92L
Kind of package: Ammo Pack
Frequency: 120MHz
Collector-emitter voltage: 30V
Current gain: 160...320
Collector current: 2A
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
Mounting: THT
Case: TO92L
товар відсутній
| M74VHCT126ADTR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; TTL; SMD; TSSOP14; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; TTL; SMD; TSSOP14; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
товар відсутній
| MC74VHCT126ADR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; TTL; SMD; SO14; VHCT; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: TTL
Mounting: SMD
Case: SO14
Manufacturer series: VHCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; TTL; SMD; SO14; VHCT; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: TTL
Mounting: SMD
Case: SO14
Manufacturer series: VHCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
товар відсутній
| NCP715MX50TBG |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 50mA; XDFN6; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 5V
Output current: 50mA
Case: XDFN6
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...24V
Manufacturer series: NCP715
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 50mA; XDFN6; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 5V
Output current: 50mA
Case: XDFN6
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...24V
Manufacturer series: NCP715
товар відсутній
| MM3Z5V1C |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.1V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1.8µA
Max. forward voltage: 1V
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.1V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1.8µA
Max. forward voltage: 1V
товар відсутній
| MM5Z5V1T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD523
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD523
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
товар відсутній
| BDW42G |
|
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 15A; 85W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 15A
Power dissipation: 85W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 15A; 85W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 15A
Power dissipation: 85W
Case: TO220AB
Mounting: THT
Kind of package: tube
товар відсутній
| BDW47G |
|
Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 15A; 85W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 15A
Power dissipation: 85W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 15A; 85W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 15A
Power dissipation: 85W
Case: TO220AB
Mounting: THT
Kind of package: tube
товар відсутній
| KSC2690AYS |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1.2A; 1.2W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1.2A
Power dissipation: 1.2W
Case: TO126ISO
Pulsed collector current: 2.5A
Current gain: 160...320
Mounting: THT
Kind of package: bulk
Frequency: 155MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1.2A; 1.2W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1.2A
Power dissipation: 1.2W
Case: TO126ISO
Pulsed collector current: 2.5A
Current gain: 160...320
Mounting: THT
Kind of package: bulk
Frequency: 155MHz
товар відсутній
| KSC2690AYSTU |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1.2A; 1.2W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1.2A
Power dissipation: 1.2W
Case: TO126ISO
Pulsed collector current: 2.5A
Current gain: 160...320
Mounting: THT
Kind of package: tube
Frequency: 155MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1.2A; 1.2W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1.2A
Power dissipation: 1.2W
Case: TO126ISO
Pulsed collector current: 2.5A
Current gain: 160...320
Mounting: THT
Kind of package: tube
Frequency: 155MHz
товар відсутній
| NC7SV126P5X |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC70-5; 0.9÷3.6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
Case: SC70-5
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 0.9µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC70-5; 0.9÷3.6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
Case: SC70-5
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 0.9µA
товар відсутній
| NTD6416ANLT4G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 71W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 71W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 74mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 71W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 71W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 74mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NTD6416ANT4G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 71W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 71W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 81mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 71W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 71W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 81mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| MC14174BDR2G |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 6; TTL; SMD; SO16; reel,tape; 600uA
Operating temperature: -55...125°C
Case: SO16
Kind of package: reel; tape
Trigger: positive-edge-triggered
Technology: TTL
Kind of integrated circuit: D flip-flop
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Number of channels: 6
Quiescent current: 600µA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 6; TTL; SMD; SO16; reel,tape; 600uA
Operating temperature: -55...125°C
Case: SO16
Kind of package: reel; tape
Trigger: positive-edge-triggered
Technology: TTL
Kind of integrated circuit: D flip-flop
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Number of channels: 6
Quiescent current: 600µA
товар відсутній
| FDMT80080DC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 1453A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Pulsed drain current: 1453A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 2.22mΩ
Mounting: SMD
Gate charge: 273nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 1453A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Pulsed drain current: 1453A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 2.22mΩ
Mounting: SMD
Gate charge: 273nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NCV7430D20R2G |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; SO14; reel,tape
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Application: automotive industry; for LED applications
Kind of package: reel; tape
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Type of integrated circuit: interface
Interface: LIN
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; SO14; reel,tape
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Application: automotive industry; for LED applications
Kind of package: reel; tape
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Type of integrated circuit: interface
Interface: LIN
товар відсутній
| FPF2595UCX |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C
Mounting: SMD
Case: WLCSP12
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 2.5...5.5V DC
Active logical level: low
Integrated circuit features: thermal protection; undervoltage protection
On-state resistance: 40mΩ
Type of integrated circuit: power switch
Number of channels: 1
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C
Mounting: SMD
Case: WLCSP12
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 2.5...5.5V DC
Active logical level: low
Integrated circuit features: thermal protection; undervoltage protection
On-state resistance: 40mΩ
Type of integrated circuit: power switch
Number of channels: 1
товар відсутній
| NC7ST08M5X |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SOT23-5; 4.5÷5.5VDC; -40÷85°C
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Kind of gate: AND
Mounting: SMD
Case: SOT23-5
Number of inputs: 2
Type of integrated circuit: digital
Number of channels: single; 1
Quiescent current: 10µA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SOT23-5; 4.5÷5.5VDC; -40÷85°C
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Kind of gate: AND
Mounting: SMD
Case: SOT23-5
Number of inputs: 2
Type of integrated circuit: digital
Number of channels: single; 1
Quiescent current: 10µA
на замовлення 1263 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 12.35 грн |
| 43+ | 8.64 грн |
| 100+ | 7.62 грн |
| 126+ | 6.75 грн |
| 346+ | 6.39 грн |
| 1000+ | 6.17 грн |
| FFSH40120ADN-F155 |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; 37W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Max. load current: 74A
Power dissipation: 37W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 135A
Max. forward voltage: 2.4V
Leakage current: 0.4mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; 37W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Max. load current: 74A
Power dissipation: 37W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 135A
Max. forward voltage: 2.4V
Leakage current: 0.4mA
товар відсутній
| NRVBS3200NT3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 3A; SMB; reel,tape
Mounting: SMD
Max. off-state voltage: 200V
Max. forward voltage: 0.86V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SMB
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 3A; SMB; reel,tape
Mounting: SMD
Max. off-state voltage: 200V
Max. forward voltage: 0.86V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SMB
товар відсутній
| KSC3265YMTF |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.8A; 0.2W; SOT23
Kind of package: reel; tape
Collector-emitter voltage: 25V
Current gain: 160...320
Collector current: 0.8A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Mounting: SMD
Case: SOT23
Frequency: 120MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.8A; 0.2W; SOT23
Kind of package: reel; tape
Collector-emitter voltage: 25V
Current gain: 160...320
Collector current: 0.8A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Mounting: SMD
Case: SOT23
Frequency: 120MHz
на замовлення 2990 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 25.02 грн |
| 34+ | 10.89 грн |
| 112+ | 3.25 грн |
| 129+ | 2.82 грн |
| 250+ | 2.41 грн |
| 382+ | 2.21 грн |
| 1000+ | 2.19 грн |
| 1051+ | 2.09 грн |
| KSC2334YTU |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 7A; 1.5W; TO220AB
Mounting: THT
Case: TO220AB
Collector-emitter voltage: 100V
Current gain: 120...240
Collector current: 7A
Pulsed collector current: 15A
Type of transistor: NPN
Power dissipation: 1.5W
Polarisation: bipolar
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 7A; 1.5W; TO220AB
Mounting: THT
Case: TO220AB
Collector-emitter voltage: 100V
Current gain: 120...240
Collector current: 7A
Pulsed collector current: 15A
Type of transistor: NPN
Power dissipation: 1.5W
Polarisation: bipolar
Kind of package: tube
товар відсутній
| MMSZ5236BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 7.5V
Power dissipation: 0.5W
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 7.5V
Power dissipation: 0.5W
товар відсутній
| FOD852300 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V; DIP4
Manufacturer series: FOD852
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP4
Max. off-state voltage: 6V
Collector-emitter voltage: 300V
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-15000%@1mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V; DIP4
Manufacturer series: FOD852
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP4
Max. off-state voltage: 6V
Collector-emitter voltage: 300V
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-15000%@1mA
товар відсутній
| KSC1008CYTA |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92
Mounting: THT
Case: TO92
Kind of package: Ammo Pack
Power dissipation: 0.8W
Polarisation: bipolar
Frequency: 50MHz
Collector-emitter voltage: 60V
Current gain: 120...240
Collector current: 0.7A
Type of transistor: NPN
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92
Mounting: THT
Case: TO92
Kind of package: Ammo Pack
Power dissipation: 0.8W
Polarisation: bipolar
Frequency: 50MHz
Collector-emitter voltage: 60V
Current gain: 120...240
Collector current: 0.7A
Type of transistor: NPN
товар відсутній
| KSC1008YBU |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92
Mounting: THT
Case: TO92
Kind of package: bulk
Power dissipation: 0.8W
Polarisation: bipolar
Frequency: 50MHz
Collector-emitter voltage: 60V
Current gain: 120...240
Collector current: 0.7A
Type of transistor: NPN
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92
Mounting: THT
Case: TO92
Kind of package: bulk
Power dissipation: 0.8W
Polarisation: bipolar
Frequency: 50MHz
Collector-emitter voltage: 60V
Current gain: 120...240
Collector current: 0.7A
Type of transistor: NPN
товар відсутній
| KSC1008YTA |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92
Mounting: THT
Case: TO92
Kind of package: Ammo Pack
Power dissipation: 0.8W
Polarisation: bipolar
Frequency: 50MHz
Collector-emitter voltage: 60V
Current gain: 120...240
Collector current: 0.7A
Type of transistor: NPN
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92
Mounting: THT
Case: TO92
Kind of package: Ammo Pack
Power dissipation: 0.8W
Polarisation: bipolar
Frequency: 50MHz
Collector-emitter voltage: 60V
Current gain: 120...240
Collector current: 0.7A
Type of transistor: NPN
товар відсутній
| FDMC8622 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 30A; 31W; WDFN8
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 16A
On-state resistance: 98mΩ
Type of transistor: N-MOSFET
Power dissipation: 31W
Polarisation: unipolar
Gate charge: 7.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Mounting: SMD
Case: WDFN8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 30A; 31W; WDFN8
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 16A
On-state resistance: 98mΩ
Type of transistor: N-MOSFET
Power dissipation: 31W
Polarisation: unipolar
Gate charge: 7.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Mounting: SMD
Case: WDFN8
товар відсутній
| FDMS8622 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16.5A; 31W; PQFN8
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 16.5A
On-state resistance: 97mΩ
Type of transistor: N-MOSFET
Power dissipation: 31W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PQFN8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16.5A; 31W; PQFN8
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 16.5A
On-state resistance: 97mΩ
Type of transistor: N-MOSFET
Power dissipation: 31W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PQFN8
товар відсутній
| HMHAA280R2 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 50-0%@5mA
Collector-emitter voltage: 80V
Case: MFP4
Max. off-state voltage: 6V
Manufacturer series: HMHAA280
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 50-0%@5mA
Collector-emitter voltage: 80V
Case: MFP4
Max. off-state voltage: 6V
Manufacturer series: HMHAA280
товар відсутній
| FDG327N |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.42W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±8V
On-state resistance: 0.115Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.42W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±8V
On-state resistance: 0.115Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| S1K |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 6.6pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Power dissipation: 1.4W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 6.6pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Power dissipation: 1.4W
Kind of package: reel; tape
на замовлення 3285 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 11.26 грн |
| 65+ | 5.74 грн |
| 180+ | 4.77 грн |
| 485+ | 4.51 грн |
| FS8G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 8A; TO277; Ufmax: 0.845V; Ifsm: 230A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 8A
Semiconductor structure: single diode
Case: TO277
Max. forward voltage: 0.845V
Max. forward impulse current: 230A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 8A; TO277; Ufmax: 0.845V; Ifsm: 230A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 8A
Semiconductor structure: single diode
Case: TO277
Max. forward voltage: 0.845V
Max. forward impulse current: 230A
Kind of package: reel; tape
товар відсутній
| FS8J |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; TO277; Ufmax: 0.845V; Ifsm: 230A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Case: TO277
Max. forward voltage: 0.845V
Max. forward impulse current: 230A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; TO277; Ufmax: 0.845V; Ifsm: 230A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Case: TO277
Max. forward voltage: 0.845V
Max. forward impulse current: 230A
Kind of package: reel; tape
товар відсутній
| FS8K |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; TO277; Ufmax: 0.845V; Ifsm: 230A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Case: TO277
Max. forward voltage: 0.845V
Max. forward impulse current: 230A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; TO277; Ufmax: 0.845V; Ifsm: 230A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Case: TO277
Max. forward voltage: 0.845V
Max. forward impulse current: 230A
Kind of package: reel; tape
товар відсутній
| FS8M |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 8A; TO277; Ufmax: 0.845V; Ifsm: 230A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 8A
Semiconductor structure: single diode
Case: TO277
Max. forward voltage: 0.845V
Max. forward impulse current: 230A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 8A; TO277; Ufmax: 0.845V; Ifsm: 230A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 8A
Semiconductor structure: single diode
Case: TO277
Max. forward voltage: 0.845V
Max. forward impulse current: 230A
Kind of package: reel; tape
товар відсутній
| S1BFL |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 2us; SOD123F; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 2µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 4pF
Case: SOD123F
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 2us; SOD123F; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 2µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 4pF
Case: SOD123F
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
товар відсутній
| 2N7002 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| 2N7002 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 100730 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 9.23 грн |
| 55+ | 6.75 грн |
| 60+ | 6.1 грн |
| 100+ | 5.08 грн |
| 500+ | 5.01 грн |
| FOD260L |
|
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 5kV; 10Mbps; DIP8
Mounting: THT
Case: DIP8
Max. off-state voltage: 5V
Turn-on time: 22ns
Turn-off time: 3ns
Output voltage: 7V
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Slew rate: 50kV/μs
Type of optocoupler: optocoupler
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 5kV; 10Mbps; DIP8
Mounting: THT
Case: DIP8
Max. off-state voltage: 5V
Turn-on time: 22ns
Turn-off time: 3ns
Output voltage: 7V
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Slew rate: 50kV/μs
Type of optocoupler: optocoupler
товар відсутній
| NC7WP02L8X |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; UQFN8; TinyLogic; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 2
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: UQFN8
Manufacturer series: TinyLogic
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: NC
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; UQFN8; TinyLogic; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 2
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: UQFN8
Manufacturer series: TinyLogic
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: NC
товар відсутній
| NC7WP08L8X |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS; SMD; UQFN8; TinyLogic; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 2
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: UQFN8
Manufacturer series: TinyLogic
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: NC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS; SMD; UQFN8; TinyLogic; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 2
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: UQFN8
Manufacturer series: TinyLogic
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: NC
товар відсутній
| NC7WP125K8X |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; MO187,US8; 5uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: MO187; US8
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 5µA
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; MO187,US8; 5uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: MO187; US8
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 5µA
Kind of output: 3-state
товар відсутній
| NC7WP125L8X |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 2; IN: 2; CMOS; SMD; UQFN8; TinyLogic
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 2
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: UQFN8
Manufacturer series: TinyLogic
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Family: NC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 2; IN: 2; CMOS; SMD; UQFN8; TinyLogic
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 2
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: UQFN8
Manufacturer series: TinyLogic
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Family: NC
товар відсутній
| FDMS86181 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 78A; 125W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 78A
Power dissipation: 125W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 78A; 125W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 78A
Power dissipation: 125W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній