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BF840,215 BF840,215 Nexperia USA Inc. BF840.pdf Description: TRANS NPN 40V 0.025A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V
Frequency - Transition: 380MHz
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 25 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+8.03 грн
6000+ 7.11 грн
Мінімальне замовлення: 3000
BFS19,235 BFS19,235 Nexperia USA Inc. BFS19.pdf Description: TRANS NPN 20V 0.03A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 10V
Frequency - Transition: 260MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
BFS19,215 BFS19,215 Nexperia USA Inc. BFS19.pdf Description: TRANS NPN 20V 0.03A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 10V
Frequency - Transition: 260MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
BFS20,215 BFS20,215 Nexperia USA Inc. BFS20.pdf Description: TRANS NPN 20V 0.025A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 10V
Frequency - Transition: 450MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 25 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+7.53 грн
6000+ 6.99 грн
9000+ 6.85 грн
Мінімальне замовлення: 3000
BFS20W,115 BFS20W,115 Nexperia USA Inc. BFS20W.pdf Description: TRANS NPN 20V 0.025A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 10V
Frequency - Transition: 470MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 25 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
BSH103,235 BSH103,235 Nexperia USA Inc. BSH103.pdf Description: MOSFET N-CH 30V 850MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 400mV @ 1mA (Min)
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 24 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
10000+6.1 грн
30000+ 5.78 грн
Мінімальне замовлення: 10000
BSH103,215 BSH103,215 Nexperia USA Inc. BSH103.pdf Description: MOSFET N-CH 30V 850MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 400mV @ 1mA (Min)
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 24 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
3000+6.93 грн
6000+ 6.12 грн
9000+ 5.83 грн
15000+ 5.17 грн
21000+ 5 грн
Мінімальне замовлення: 3000
BSH105,235 BSH105,235 Nexperia USA Inc. BSH105.pdf Description: MOSFET N-CH 20V 1.05A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.05A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 600mA, 4.5V
Power Dissipation (Max): 417mW (Ta)
Vgs(th) (Max) @ Id: 570mV @ 1mA (Typ)
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 16 V
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
10000+5.17 грн
Мінімальне замовлення: 10000
BSH105,215 BSH105,215 Nexperia USA Inc. BSH105.pdf Description: MOSFET N-CH 20V 1.05A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.05A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 600mA, 4.5V
Power Dissipation (Max): 417mW (Ta)
Vgs(th) (Max) @ Id: 570mV @ 1mA (Typ)
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 16 V
на замовлення 399000 шт:
термін постачання 21-31 дні (днів)
3000+5.4 грн
6000+ 4.94 грн
Мінімальне замовлення: 3000
BSH108,215 BSH108,215 Nexperia USA Inc. BSH108.pdf Description: MOSFET N-CH 30V 1.9A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 10V
Power Dissipation (Max): 830mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)
3000+6.36 грн
6000+ 5.84 грн
9000+ 5.64 грн
Мінімальне замовлення: 3000
BSH111,235 BSH111,235 Nexperia USA Inc. BSH111.pdf Description: MOSFET N-CH 55V 335MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 335mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 830mW (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TO-236AB
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
товару немає в наявності
BSH203,215 BSH203,215 Nexperia USA Inc. BSH203.pdf Description: MOSFET P-CH 30V 470MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 280mA, 4.5V
Power Dissipation (Max): 417mW (Ta)
Vgs(th) (Max) @ Id: 680mV @ 1mA (Typ)
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 24 V
на замовлення 63000 шт:
термін постачання 21-31 дні (днів)
3000+6.55 грн
6000+ 5.78 грн
9000+ 5.51 грн
15000+ 4.89 грн
21000+ 4.72 грн
30000+ 4.55 грн
Мінімальне замовлення: 3000
BSP030,115 BSP030,115 Nexperia USA Inc. BSP030.pdf Description: MOSFET N-CH 30V 10A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Power Dissipation (Max): 8.3W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 24 V
товару немає в наявності
BSP110,115 BSP110,115 Nexperia USA Inc. BSP110.pdf Description: MOSFET N-CH 100V 520MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 520mA (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 150mA, 5V
Power Dissipation (Max): 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
товару немає в наявності
BSP122,115 BSP122,115 Nexperia USA Inc. BSP122.pdf Description: MOSFET N-CH 200V 550MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
1000+15.15 грн
2000+ 13.38 грн
3000+ 12.76 грн
5000+ 11.32 грн
Мінімальне замовлення: 1000
BSP126,135 BSP126,135 Nexperia USA Inc. BSP126.pdf Description: MOSFET N-CH 250V 375MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
4000+14.28 грн
8000+ 12.8 грн
Мінімальне замовлення: 4000
BSP126,115 BSP126,115 Nexperia USA Inc. BSP126.pdf Description: MOSFET N-CH 250V 375MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
на замовлення 67000 шт:
термін постачання 21-31 дні (днів)
1000+13.45 грн
2000+ 12.55 грн
Мінімальне замовлення: 1000
BSP130,115 BSP130,115 Nexperia USA Inc. BSP130.pdf Description: MOSFET N-CH 300V 350MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 250mA, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
товару немає в наявності
BSP19,115 BSP19,115 Nexperia USA Inc. BSP19.pdf Description: TRANS NPN 350V 0.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 1.2 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 175 шт:
термін постачання 21-31 дні (днів)
BSP220,115 BSP220,115 Nexperia USA Inc. BSP220_CNV.pdf Description: MOSFET P-CH 200V 225MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 225mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
1000+25.27 грн
2000+ 22.26 грн
3000+ 21.2 грн
Мінімальне замовлення: 1000
BSP225,115 BSP225,115 Nexperia USA Inc. BSP225_CNV.pdf Description: MOSFET P-CH 250V 225MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 225mA (Ta)
Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
1000+20.25 грн
2000+ 17.77 грн
3000+ 16.89 грн
5000+ 14.92 грн
7000+ 14.36 грн
Мінімальне замовлення: 1000
BSP230,135 BSP230,135 Nexperia USA Inc. BSP230.pdf Description: MOSFET P-CH 300V 210MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 17Ohm @ 170mA, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.55V @ 1mA
Supplier Device Package: SOT-223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V
товару немає в наявності
BSP250,135 BSP250,135 Nexperia USA Inc. BSP250.pdf Description: MOSFET P-CH 30V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Power Dissipation (Max): 1.65W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 20 V
на замовлення 104000 шт:
термін постачання 21-31 дні (днів)
4000+14.38 грн
Мінімальне замовлення: 4000
BSP250,115 BSP250,115 Nexperia USA Inc. BSP250.pdf Description: MOSFET P-CH 30V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Power Dissipation (Max): 1.65W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 20 V
на замовлення 21895 шт:
термін постачання 21-31 дні (днів)
1000+14.6 грн
2000+ 13.86 грн
Мінімальне замовлення: 1000
BSP33,115 BSP33,115 Nexperia USA Inc. BSP31_32_33.pdf description Description: TRANS PNP 80V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.3 W
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+13.72 грн
Мінімальне замовлення: 1000
BSP50,115 BSP50,115 Nexperia USA Inc. BSP50.pdf Description: TRANS NPN DARL 45V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.25 W
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
BSP51,115 BSP51,115 Nexperia USA Inc. BSP51.pdf Description: TRANS NPN DARL 60V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.25 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+15.77 грн
Мінімальне замовлення: 1000
BSP52,115 BSP52,115 Nexperia USA Inc. BSP52.pdf Description: TRANS NPN DARL 80V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.25 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 104000 шт:
термін постачання 21-31 дні (днів)
1000+12.36 грн
2000+ 11.28 грн
Мінімальне замовлення: 1000
BSP61,115 BSP61,115 Nexperia USA Inc. BSP61.pdf Description: TRANS PNP DARL 60V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.25 W
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
BSP62,115 BSP62,115 Nexperia USA Inc. BSP62.pdf Description: TRANS PNP DARL 80V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.25 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+15.8 грн
Мінімальне замовлення: 1000
BSR31,115 BSR31,115 Nexperia USA Inc. BSR31.pdf Description: TRANS PNP 60V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.35 W
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
BSR33,115 BSR33,115 Nexperia USA Inc. BSR33.pdf Description: TRANS PNP 80V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.35 W
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
BSR41,115 BSR41,115 Nexperia USA Inc. BSR41.pdf Description: TRANS NPN 60V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.35 W
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1000+13.05 грн
Мінімальне замовлення: 1000
BSS192,115 BSS192,115 Nexperia USA Inc. BSS192.pdf Description: MOSFET P-CH 240V 200MA SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V
Power Dissipation (Max): 560mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-89
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)
1000+11.79 грн
2000+ 10.64 грн
Мінімальне замовлення: 1000
BSS63,215 BSS63,215 Nexperia USA Inc. BSS63.pdf Description: TRANS PNP 100V 0.1A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2.5mA, 25mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 85MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
BSS64,215 BSS64,215 Nexperia USA Inc. BSS64.pdf Description: TRANS NPN 80V 0.1A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 15mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
BST50,115 BST50,115 Nexperia USA Inc. BST50_51_52.pdf Description: TRANS NPN DARL 45V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-89
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.3 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1000+18.5 грн
2000+ 15.87 грн
Мінімальне замовлення: 1000
BST51,135 BST51,135 Nexperia USA Inc. Description: TRANS NPN DARL 60V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.3 W
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
BST51,115 BST51,115 Nexperia USA Inc. Description: TRANS NPN DARL 60V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.3 W
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
BST52,135 BST52,135 Nexperia USA Inc. Description: TRANS NPN DARL 80V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.3 W
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
BST52,115 BST52,115 Nexperia USA Inc. Description: TRANS NPN DARL 80V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.3 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
1000+15.46 грн
Мінімальне замовлення: 1000
BST61,115 BST61,115 Nexperia USA Inc. BST60_61_62.pdf Description: TRANS PNP DARL 60V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.3 W
товару немає в наявності
BUK7215-55A,118 BUK7215-55A,118 Nexperia USA Inc. BUK7215-55A.pdf Description: MOSFET N-CH 55V 55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2107 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
BUK7515-100A,127 BUK7515-100A,127 Nexperia USA Inc. BUK7515-100A.pdf Description: MOSFET N-CH 100V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
товару немає в наявності
BUK7528-100A,127 BUK7528-100A,127 Nexperia USA Inc. BUK7528-100A.pdf Description: MOSFET N-CH 100V 47A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 25A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
товару немає в наявності
BUK7535-100A,127 BUK7535-100A,127 Nexperia USA Inc. BUK7535-100A.pdf Description: MOSFET N-CH 100V 41A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 25A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 25 V
товару немає в наявності
BUK7604-40A,118 BUK7604-40A,118 Nexperia USA Inc. BUK7604-40A.pdf Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5730 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
BUK7608-55A,118 BUK7608-55A,118 Nexperia USA Inc. BUK7608-55A.pdf Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Power Dissipation (Max): 254W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 0 V
Input Capacitance (Ciss) (Max) @ Vds: 4352 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
BUK7618-55,118 BUK7618-55,118 Nexperia USA Inc. BUK7618-55.pdf Description: MOSFET N-CH 55V 57A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
товару немає в наявності
BUK7635-100A,118 BUK7635-100A,118 Nexperia USA Inc. BUK7635-100A.pdf Description: MOSFET N-CH 100V 41A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 25A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
BUK9215-55A,118 BUK9215-55A,118 Nexperia USA Inc. BUK9215-55A.pdf Description: MOSFET N-CH 55V 55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 25A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2916 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
BUK9222-55A,118 BUK9222-55A,118 Nexperia USA Inc. BUK9222-55A.pdf Description: MOSFET N-CH 55V 48A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 25A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
BUK9504-40A,127 BUK9504-40A,127 Nexperia USA Inc. BUK9504-40A.pdf Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8260 pF @ 25 V
товару немає в наявності
BUK9515-100A,127 BUK9515-100A,127 Nexperia USA Inc. BUK9515-100A.pdf Description: MOSFET N-CH 100V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
товару немає в наявності
BUK9518-55A,127 BUK9518-55A,127 Nexperia USA Inc. BUK9518-55A.pdf Description: MOSFET N-CH 55V 61A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
товару немає в наявності
BUK9520-100A,127 BUK9520-100A,127 Nexperia USA Inc. BUK9520-100A.pdf Description: MOSFET N-CH 100V 63A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 25A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 6385 pF @ 25 V
товару немає в наявності
BUK9604-40A,118 BUK9604-40A,118 Nexperia USA Inc. BUK9604-40A.pdf Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8260 pF @ 25 V
товару немає в наявності
BUK9606-55A,118 BUK9606-55A,118 Nexperia USA Inc. BUK9606-55A.pdf Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
товару немає в наявності
BUK9614-55A,118 BUK9614-55A,118 Nexperia USA Inc. BUK9614-55A.pdf Description: MOSFET N-CH 55V 73A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 25A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 3307 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
BUK9615-100A,118 BUK9615-100A,118 Nexperia USA Inc. BUK9615-100A.pdf Description: MOSFET N-CH 100V 75A D2PAK
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
BF840,215 BF840.pdf
BF840,215
Виробник: Nexperia USA Inc.
Description: TRANS NPN 40V 0.025A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V
Frequency - Transition: 380MHz
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 25 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+8.03 грн
6000+ 7.11 грн
Мінімальне замовлення: 3000
BFS19,235 BFS19.pdf
BFS19,235
Виробник: Nexperia USA Inc.
Description: TRANS NPN 20V 0.03A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 10V
Frequency - Transition: 260MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
BFS19,215 BFS19.pdf
BFS19,215
Виробник: Nexperia USA Inc.
Description: TRANS NPN 20V 0.03A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 10V
Frequency - Transition: 260MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
BFS20,215 BFS20.pdf
BFS20,215
Виробник: Nexperia USA Inc.
Description: TRANS NPN 20V 0.025A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 10V
Frequency - Transition: 450MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 25 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+7.53 грн
6000+ 6.99 грн
9000+ 6.85 грн
Мінімальне замовлення: 3000
BFS20W,115 BFS20W.pdf
BFS20W,115
Виробник: Nexperia USA Inc.
Description: TRANS NPN 20V 0.025A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 10V
Frequency - Transition: 470MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 25 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
BSH103,235 BSH103.pdf
BSH103,235
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 850MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 400mV @ 1mA (Min)
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 24 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10000+6.1 грн
30000+ 5.78 грн
Мінімальне замовлення: 10000
BSH103,215 BSH103.pdf
BSH103,215
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 850MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 400mV @ 1mA (Min)
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 24 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+6.93 грн
6000+ 6.12 грн
9000+ 5.83 грн
15000+ 5.17 грн
21000+ 5 грн
Мінімальне замовлення: 3000
BSH105,235 BSH105.pdf
BSH105,235
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 20V 1.05A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.05A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 600mA, 4.5V
Power Dissipation (Max): 417mW (Ta)
Vgs(th) (Max) @ Id: 570mV @ 1mA (Typ)
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 16 V
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10000+5.17 грн
Мінімальне замовлення: 10000
BSH105,215 BSH105.pdf
BSH105,215
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 20V 1.05A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.05A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 600mA, 4.5V
Power Dissipation (Max): 417mW (Ta)
Vgs(th) (Max) @ Id: 570mV @ 1mA (Typ)
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 16 V
на замовлення 399000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+5.4 грн
6000+ 4.94 грн
Мінімальне замовлення: 3000
BSH108,215 BSH108.pdf
BSH108,215
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 1.9A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 10V
Power Dissipation (Max): 830mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+6.36 грн
6000+ 5.84 грн
9000+ 5.64 грн
Мінімальне замовлення: 3000
BSH111,235 BSH111.pdf
BSH111,235
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 55V 335MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 335mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 830mW (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TO-236AB
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
товару немає в наявності
BSH203,215 BSH203.pdf
BSH203,215
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 470MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 280mA, 4.5V
Power Dissipation (Max): 417mW (Ta)
Vgs(th) (Max) @ Id: 680mV @ 1mA (Typ)
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 24 V
на замовлення 63000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+6.55 грн
6000+ 5.78 грн
9000+ 5.51 грн
15000+ 4.89 грн
21000+ 4.72 грн
30000+ 4.55 грн
Мінімальне замовлення: 3000
BSP030,115 BSP030.pdf
BSP030,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 10A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Power Dissipation (Max): 8.3W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 24 V
товару немає в наявності
BSP110,115 BSP110.pdf
BSP110,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 520MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 520mA (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 150mA, 5V
Power Dissipation (Max): 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
товару немає в наявності
BSP122,115 BSP122.pdf
BSP122,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 200V 550MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+15.15 грн
2000+ 13.38 грн
3000+ 12.76 грн
5000+ 11.32 грн
Мінімальне замовлення: 1000
BSP126,135 BSP126.pdf
BSP126,135
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 250V 375MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4000+14.28 грн
8000+ 12.8 грн
Мінімальне замовлення: 4000
BSP126,115 BSP126.pdf
BSP126,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 250V 375MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
на замовлення 67000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+13.45 грн
2000+ 12.55 грн
Мінімальне замовлення: 1000
BSP130,115 BSP130.pdf
BSP130,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 300V 350MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 250mA, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
товару немає в наявності
BSP19,115 BSP19.pdf
BSP19,115
Виробник: Nexperia USA Inc.
Description: TRANS NPN 350V 0.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 1.2 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 175 шт:
термін постачання 21-31 дні (днів)
BSP220,115 BSP220_CNV.pdf
BSP220,115
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 200V 225MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 225mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+25.27 грн
2000+ 22.26 грн
3000+ 21.2 грн
Мінімальне замовлення: 1000
BSP225,115 BSP225_CNV.pdf
BSP225,115
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 250V 225MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 225mA (Ta)
Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+20.25 грн
2000+ 17.77 грн
3000+ 16.89 грн
5000+ 14.92 грн
7000+ 14.36 грн
Мінімальне замовлення: 1000
BSP230,135 BSP230.pdf
BSP230,135
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 300V 210MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 17Ohm @ 170mA, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.55V @ 1mA
Supplier Device Package: SOT-223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V
товару немає в наявності
BSP250,135 BSP250.pdf
BSP250,135
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Power Dissipation (Max): 1.65W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 20 V
на замовлення 104000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4000+14.38 грн
Мінімальне замовлення: 4000
BSP250,115 BSP250.pdf
BSP250,115
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Power Dissipation (Max): 1.65W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 20 V
на замовлення 21895 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+14.6 грн
2000+ 13.86 грн
Мінімальне замовлення: 1000
BSP33,115 description BSP31_32_33.pdf
BSP33,115
Виробник: Nexperia USA Inc.
Description: TRANS PNP 80V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.3 W
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+13.72 грн
Мінімальне замовлення: 1000
BSP50,115 BSP50.pdf
BSP50,115
Виробник: Nexperia USA Inc.
Description: TRANS NPN DARL 45V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.25 W
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
BSP51,115 BSP51.pdf
BSP51,115
Виробник: Nexperia USA Inc.
Description: TRANS NPN DARL 60V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.25 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+15.77 грн
Мінімальне замовлення: 1000
BSP52,115 BSP52.pdf
BSP52,115
Виробник: Nexperia USA Inc.
Description: TRANS NPN DARL 80V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.25 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 104000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+12.36 грн
2000+ 11.28 грн
Мінімальне замовлення: 1000
BSP61,115 BSP61.pdf
BSP61,115
Виробник: Nexperia USA Inc.
Description: TRANS PNP DARL 60V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.25 W
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
BSP62,115 BSP62.pdf
BSP62,115
Виробник: Nexperia USA Inc.
Description: TRANS PNP DARL 80V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.25 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+15.8 грн
Мінімальне замовлення: 1000
BSR31,115 BSR31.pdf
BSR31,115
Виробник: Nexperia USA Inc.
Description: TRANS PNP 60V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.35 W
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
BSR33,115 BSR33.pdf
BSR33,115
Виробник: Nexperia USA Inc.
Description: TRANS PNP 80V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.35 W
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
BSR41,115 BSR41.pdf
BSR41,115
Виробник: Nexperia USA Inc.
Description: TRANS NPN 60V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.35 W
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+13.05 грн
Мінімальне замовлення: 1000
BSS192,115 BSS192.pdf
BSS192,115
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 240V 200MA SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V
Power Dissipation (Max): 560mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-89
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+11.79 грн
2000+ 10.64 грн
Мінімальне замовлення: 1000
BSS63,215 BSS63.pdf
BSS63,215
Виробник: Nexperia USA Inc.
Description: TRANS PNP 100V 0.1A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2.5mA, 25mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 85MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
BSS64,215 BSS64.pdf
BSS64,215
Виробник: Nexperia USA Inc.
Description: TRANS NPN 80V 0.1A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 15mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
BST50,115 BST50_51_52.pdf
BST50,115
Виробник: Nexperia USA Inc.
Description: TRANS NPN DARL 45V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-89
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.3 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+18.5 грн
2000+ 15.87 грн
Мінімальне замовлення: 1000
BST51,135
BST51,135
Виробник: Nexperia USA Inc.
Description: TRANS NPN DARL 60V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.3 W
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
BST51,115
BST51,115
Виробник: Nexperia USA Inc.
Description: TRANS NPN DARL 60V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.3 W
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
BST52,135
BST52,135
Виробник: Nexperia USA Inc.
Description: TRANS NPN DARL 80V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.3 W
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
BST52,115
BST52,115
Виробник: Nexperia USA Inc.
Description: TRANS NPN DARL 80V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.3 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+15.46 грн
Мінімальне замовлення: 1000
BST61,115 BST60_61_62.pdf
BST61,115
Виробник: Nexperia USA Inc.
Description: TRANS PNP DARL 60V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.3 W
товару немає в наявності
BUK7215-55A,118 BUK7215-55A.pdf
BUK7215-55A,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 55V 55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2107 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
BUK7515-100A,127 BUK7515-100A.pdf
BUK7515-100A,127
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
товару немає в наявності
BUK7528-100A,127 BUK7528-100A.pdf
BUK7528-100A,127
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 47A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 25A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
товару немає в наявності
BUK7535-100A,127 BUK7535-100A.pdf
BUK7535-100A,127
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 41A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 25A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 25 V
товару немає в наявності
BUK7604-40A,118 BUK7604-40A.pdf
BUK7604-40A,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5730 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
BUK7608-55A,118 BUK7608-55A.pdf
BUK7608-55A,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Power Dissipation (Max): 254W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 0 V
Input Capacitance (Ciss) (Max) @ Vds: 4352 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
BUK7618-55,118 BUK7618-55.pdf
BUK7618-55,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 55V 57A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
товару немає в наявності
BUK7635-100A,118 BUK7635-100A.pdf
BUK7635-100A,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 41A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 25A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
BUK9215-55A,118 BUK9215-55A.pdf
BUK9215-55A,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 55V 55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 25A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2916 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
BUK9222-55A,118 BUK9222-55A.pdf
BUK9222-55A,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 55V 48A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 25A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
BUK9504-40A,127 BUK9504-40A.pdf
BUK9504-40A,127
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8260 pF @ 25 V
товару немає в наявності
BUK9515-100A,127 BUK9515-100A.pdf
BUK9515-100A,127
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
товару немає в наявності
BUK9518-55A,127 BUK9518-55A.pdf
BUK9518-55A,127
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 55V 61A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
товару немає в наявності
BUK9520-100A,127 BUK9520-100A.pdf
BUK9520-100A,127
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 63A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 25A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 6385 pF @ 25 V
товару немає в наявності
BUK9604-40A,118 BUK9604-40A.pdf
BUK9604-40A,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8260 pF @ 25 V
товару немає в наявності
BUK9606-55A,118 BUK9606-55A.pdf
BUK9606-55A,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
товару немає в наявності
BUK9614-55A,118 BUK9614-55A.pdf
BUK9614-55A,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 55V 73A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 25A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 3307 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
BUK9615-100A,118 BUK9615-100A.pdf
BUK9615-100A,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 75A D2PAK
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
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