Продукція > GD2
Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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GD200FFX65C6S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Technology: Trench FS IGBT Collector current: 200A Case: C6 62mm Gate-emitter voltage: ±20V Pulsed collector current: 400A Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Electrical mounting: Press-in PCB Topology: IGBT three-phase bridge; NTC thermistor Mechanical mounting: screw Type of module: IGBT | товар відсутній | |||||||||||||||||
GD200FFX65C6S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Technology: Trench FS IGBT Collector current: 200A Case: C6 62mm Gate-emitter voltage: ±20V Pulsed collector current: 400A Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Electrical mounting: Press-in PCB Topology: IGBT three-phase bridge; NTC thermistor Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 10 шт | товар відсутній | |||||||||||||||||
GD200FFY120C6S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Technology: Advanced Trench FS IGBT Collector current: 200A Case: C6 62mm Gate-emitter voltage: ±20V Pulsed collector current: 400A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Topology: IGBT three-phase bridge; NTC thermistor Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 10 шт | товар відсутній | |||||||||||||||||
GD200FFY120C6S | STARPOWER | Description: STARPOWER - GD200FFY120C6S - IGBT-Modul, Dreiphasen-Vollbrücke, 309 A, 1.7 V, 1.006 kW, 150 °C, Module IGBT-Technologie: Trench/Feldstop Sperrschichttemperatur Tj, max.: 150 Kollektor-Emitter-Sättigungsspannung: 1.7 Dauer-Kollektorstrom: 309 IGBT-Anschluss: Einpressmontage Kollektor-Emitter-Sättigungsspannung Vce(on): 1.7 Verlustleistung Pd: 1.006 Verlustleistung: 1.006 Bauform - Transistor: Module Kollektor-Emitter-Spannung V(br)ceo: 1.2 Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2 IGBT-Konfiguration: Dreiphasen-Vollbrücke DC-Kollektorstrom: 309 Betriebstemperatur, max.: 150 SVHC: No SVHC (25-Jun-2020) | на замовлення 13 шт: термін постачання 21-31 дні (днів) |
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GD200FFY120C6S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Technology: Advanced Trench FS IGBT Collector current: 200A Case: C6 62mm Gate-emitter voltage: ±20V Pulsed collector current: 400A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Topology: IGBT three-phase bridge; NTC thermistor Mechanical mounting: screw Type of module: IGBT | товар відсутній | |||||||||||||||||
GD200HFU120C2S | STARPOWER | Description: STARPOWER - GD200HFU120C2S - IGBT-Modul, Halbbrücke, 262 A, 3 V, 1.315 kW, 125 °C, Module tariffCode: 85412900 Transistormontage: Platte rohsCompliant: YES IGBT-Technologie: NPT Ultra Fast IGBT Sperrschichttemperatur Tj, max.: 125°C hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 3V Dauer-Kollektorstrom: 262A usEccn: EAR99 IGBT-Anschluss: Stiftbolzen Kollektor-Emitter-Sättigungsspannung Vce(on): 3V Verlustleistung Pd: 1.315kW euEccn: NLR Verlustleistung: 1.315kW Bauform - Transistor: Module Kollektor-Emitter-Spannung V(br)ceo: 1.2kV Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2kV IGBT-Konfiguration: Halbbrücke productTraceability: No DC-Kollektorstrom: 262A Betriebstemperatur, max.: 125°C SVHC: No SVHC (25-Jun-2020) | на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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GD200HFU120C2S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Technology: NPT Ultra Fast IGBT Collector current: 200A Case: C2 62mm Gate-emitter voltage: ±20V Pulsed collector current: 400A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Topology: IGBT half-bridge Mechanical mounting: screw Type of module: IGBT | товар відсутній | |||||||||||||||||
GD200HFU120C2S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Technology: NPT Ultra Fast IGBT Collector current: 200A Case: C2 62mm Gate-emitter voltage: ±20V Pulsed collector current: 400A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Topology: IGBT half-bridge Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||||
GD200HFX170C2S | STARPOWER | Description: STARPOWER - GD200HFX170C2S - IGBT-Modul, Halbbrücke, 337 A, 1.85 V, 1.271 kW, 150 °C, Module tariffCode: 85412900 Transistormontage: Platte rohsCompliant: YES IGBT-Technologie: Trench/Feldstop Sperrschichttemperatur Tj, max.: 150°C hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.85V Dauer-Kollektorstrom: 337A usEccn: EAR99 IGBT-Anschluss: Stiftbolzen Kollektor-Emitter-Sättigungsspannung Vce(on): 1.85V Verlustleistung Pd: 1.271kW euEccn: NLR Verlustleistung: 1.271kW Bauform - Transistor: Module Kollektor-Emitter-Spannung V(br)ceo: 1.7kV Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.7kV IGBT-Konfiguration: Halbbrücke productTraceability: No DC-Kollektorstrom: 337A Betriebstemperatur, max.: 150°C SVHC: No SVHC (25-Jun-2020) | на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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GD200HFX170C2S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Technology: Trench FS IGBT Collector current: 200A Case: C2 62mm Gate-emitter voltage: ±20V Pulsed collector current: 400A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.7kV Electrical mounting: FASTON connectors; screw Topology: IGBT half-bridge Mechanical mounting: screw Type of module: IGBT | товар відсутній | |||||||||||||||||
GD200HFX170C2S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Technology: Trench FS IGBT Collector current: 200A Case: C2 62mm Gate-emitter voltage: ±20V Pulsed collector current: 400A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.7kV Electrical mounting: FASTON connectors; screw Topology: IGBT half-bridge Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 12 шт | товар відсутній | |||||||||||||||||
GD200HFX65C1S | STARPOWER | Description: STARPOWER - GD200HFX65C1S - IGBT-Modul, Halbbrücke, 250 A, 1.45 V, 612 W, 150 °C, Module tariffCode: 85412900 Transistormontage: Platte rohsCompliant: YES IGBT-Technologie: Trench/Feldstop Sperrschichttemperatur Tj, max.: 150°C hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.45V Dauer-Kollektorstrom: 250A usEccn: EAR99 IGBT-Anschluss: Stiftbolzen Kollektor-Emitter-Sättigungsspannung Vce(on): 1.45V Verlustleistung Pd: 612W euEccn: NLR Verlustleistung: 612W Bauform - Transistor: Module Kollektor-Emitter-Spannung V(br)ceo: 650V Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V IGBT-Konfiguration: Halbbrücke productTraceability: No DC-Kollektorstrom: 250A Betriebstemperatur, max.: 150°C | на замовлення 21 шт: термін постачання 21-31 дні (днів) |
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GD200HFX65C1S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Technology: Trench FS IGBT Collector current: 200A Case: C1 34mm Gate-emitter voltage: ±20V Pulsed collector current: 400A Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Electrical mounting: FASTON connectors; screw Topology: IGBT half-bridge Mechanical mounting: screw Type of module: IGBT | товар відсутній | |||||||||||||||||
GD200HFX65C1S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Technology: Trench FS IGBT Collector current: 200A Case: C1 34mm Gate-emitter voltage: ±20V Pulsed collector current: 400A Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Electrical mounting: FASTON connectors; screw Topology: IGBT half-bridge Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 24 шт | товар відсутній | |||||||||||||||||
GD200HFX65C2S | STARPOWER | Description: STARPOWER - GD200HFX65C2S - IGBT-Modul, Halbbrücke, 247 A, 1.45 V, 612 W, 150 °C, Modul tariffCode: 85412900 Transistormontage: Platte rohsCompliant: YES IGBT-Technologie: Trench-Transistor Sperrschichttemperatur Tj, max.: 150°C hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.45V Dauer-Kollektorstrom: 247A usEccn: EAR99 IGBT-Anschluss: Stiftbolzen Kollektor-Emitter-Sättigungsspannung Vce(on): 1.45V Verlustleistung Pd: 612W euEccn: NLR Verlustleistung: 612W Bauform - Transistor: Modul Kollektor-Emitter-Spannung V(br)ceo: 650V Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V IGBT-Konfiguration: Halbbrücke productTraceability: No DC-Kollektorstrom: 247A Betriebstemperatur, max.: 150°C SVHC: To Be Advised | на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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GD200HFX65C2S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Technology: Trench FS IGBT Collector current: 200A Case: C2 62mm Gate-emitter voltage: ±20V Pulsed collector current: 400A Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Electrical mounting: FASTON connectors; screw Topology: IGBT half-bridge Mechanical mounting: screw Type of module: IGBT | товар відсутній | |||||||||||||||||
GD200HFX65C2S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Technology: Trench FS IGBT Collector current: 200A Case: C2 62mm Gate-emitter voltage: ±20V Pulsed collector current: 400A Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Electrical mounting: FASTON connectors; screw Topology: IGBT half-bridge Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 12 шт | товар відсутній | |||||||||||||||||
GD200HFX65C8S | STARPOWER | Description: STARPOWER - GD200HFX65C8S - IGBT-Modul, Halbbrücke, 247 A, 1.45 V, 612 W, 150 °C, Modul tariffCode: 85412900 Transistormontage: Platte rohsCompliant: YES IGBT-Technologie: Trench/Feldstop Sperrschichttemperatur Tj, max.: 150°C hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.45V Dauer-Kollektorstrom: 247A usEccn: EAR99 IGBT-Anschluss: Stiftbolzen Kollektor-Emitter-Sättigungsspannung Vce(on): 1.45V Verlustleistung Pd: 612W euEccn: NLR Verlustleistung: 612W Bauform - Transistor: Modul Kollektor-Emitter-Spannung V(br)ceo: 650V Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V IGBT-Konfiguration: Halbbrücke productTraceability: No DC-Kollektorstrom: 247A Betriebstemperatur, max.: 150°C SVHC: To Be Advised | на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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GD200HFX65C8S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Technology: Trench FS IGBT Collector current: 200A Case: C8 48mm Gate-emitter voltage: ±20V Pulsed collector current: 400A Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Electrical mounting: FASTON connectors; screw Topology: IGBT half-bridge Mechanical mounting: screw Type of module: IGBT | товар відсутній | |||||||||||||||||
GD200HFX65C8S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Technology: Trench FS IGBT Collector current: 200A Case: C8 48mm Gate-emitter voltage: ±20V Pulsed collector current: 400A Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Electrical mounting: FASTON connectors; screw Topology: IGBT half-bridge Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 16 шт | товар відсутній | |||||||||||||||||
GD200HFY120C2S | STARPOWER | Description: STARPOWER - GD200HFY120C2S - IGBT-Modul, Halbbrücke, 309 A, 2 V, 1.006 kW, 150 °C, Modul tariffCode: 85412900 Transistormontage: Platte rohsCompliant: YES IGBT-Technologie: Trench/Feldstop Sperrschichttemperatur Tj, max.: 150°C hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2V Dauer-Kollektorstrom: 309A usEccn: EAR99 IGBT-Anschluss: Stiftbolzen Kollektor-Emitter-Sättigungsspannung Vce(on): 2V Verlustleistung Pd: 1.006kW euEccn: NLR Verlustleistung: 1.006kW Bauform - Transistor: Modul Kollektor-Emitter-Spannung V(br)ceo: 1.2kV Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2kV IGBT-Konfiguration: Halbbrücke productTraceability: No DC-Kollektorstrom: 309A Betriebstemperatur, max.: 150°C SVHC: To Be Advised | на замовлення 14 шт: термін постачання 21-31 дні (днів) |
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GD200HFY120C2S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Technology: Advanced Trench FS IGBT Collector current: 200A Case: C2 62mm Gate-emitter voltage: ±20V Pulsed collector current: 400A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Topology: IGBT half-bridge Mechanical mounting: screw Type of module: IGBT | товар відсутній | |||||||||||||||||
GD200HFY120C2S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Technology: Advanced Trench FS IGBT Collector current: 200A Case: C2 62mm Gate-emitter voltage: ±20V Pulsed collector current: 400A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Topology: IGBT half-bridge Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 12 шт | товар відсутній | |||||||||||||||||
GD200HFY120C8S | STARPOWER | Description: STARPOWER - GD200HFY120C8S - IGBT-Modul, Halbbrücke, 309 A, 1.7 V, 1.006 kW, 150 °C, Modul tariffCode: 85412900 Transistormontage: Platte rohsCompliant: YES IGBT-Technologie: Trench/Feldstop Sperrschichttemperatur Tj, max.: 150°C hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.7V Dauer-Kollektorstrom: 309A usEccn: EAR99 IGBT-Anschluss: Stiftbolzen Kollektor-Emitter-Sättigungsspannung Vce(on): 1.7V Verlustleistung Pd: 1.006kW euEccn: NLR Verlustleistung: 1.006kW Bauform - Transistor: Modul Kollektor-Emitter-Spannung V(br)ceo: 1.2kV Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2kV IGBT-Konfiguration: Halbbrücke productTraceability: No DC-Kollektorstrom: 309A Betriebstemperatur, max.: 150°C SVHC: To Be Advised | на замовлення 14 шт: термін постачання 21-31 дні (днів) |
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GD200HFY120C8S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Technology: Advanced Trench FS IGBT Collector current: 200A Case: C8 48mm Gate-emitter voltage: ±20V Pulsed collector current: 400A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Topology: IGBT half-bridge Mechanical mounting: screw Type of module: IGBT | товар відсутній | |||||||||||||||||
GD200HFY120C8S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Technology: Advanced Trench FS IGBT Collector current: 200A Case: C8 48mm Gate-emitter voltage: ±20V Pulsed collector current: 400A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Topology: IGBT half-bridge Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 16 шт | товар відсутній | |||||||||||||||||
GD200SGY120C2S | STARPOWER | Description: STARPOWER - GD200SGY120C2S - IGBT-Modul, Einfach, 309 A, 1.7 V, 1.006 kW, 150 °C, Modul tariffCode: 85412900 Transistormontage: Platte rohsCompliant: YES IGBT-Technologie: Trench-Transistor Sperrschichttemperatur Tj, max.: 150°C hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.7V Dauer-Kollektorstrom: 309A usEccn: EAR99 IGBT-Anschluss: Stiftbolzen Kollektor-Emitter-Sättigungsspannung Vce(on): 1.7V Verlustleistung Pd: 1.006kW euEccn: NLR Verlustleistung: 1.006kW Bauform - Transistor: Modul Kollektor-Emitter-Spannung V(br)ceo: 1.2kV Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2kV IGBT-Konfiguration: Einfach productTraceability: No DC-Kollektorstrom: 309A Betriebstemperatur, max.: 150°C SVHC: To Be Advised | на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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GD200TLQ120L3S | STARPOWER | Description: STARPOWER - GD200TLQ120L3S - IGBT-Modul, Drei-Ebenen-Wechselrichter, 200 A, 1.45 V, 666 W, 150 °C, Modul tariffCode: 85412900 Transistormontage: Modul rohsCompliant: YES IGBT-Technologie: Trench/Feldstop hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.45V Dauer-Kollektorstrom: 200A usEccn: EAR99 IGBT-Anschluss: Lötanschluss euEccn: NLR Verlustleistung: 666W Bauform - Transistor: Modul Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2kV IGBT-Konfiguration: Drei-Ebenen-Wechselrichter productTraceability: No Betriebstemperatur, max.: 150°C SVHC: To Be Advised | на замовлення 16 шт: термін постачання 21-31 дні (днів) |
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GD200TLQ120L3S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; L3 Technology: Advanced Trench FS Fast IGBT Collector current: 100A Case: L3 Gate-emitter voltage: ±20V Pulsed collector current: 400A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Topology: 3-level inverter TNPC; NTC thermistor Mechanical mounting: screw Type of module: IGBT | товар відсутній | |||||||||||||||||
GD200TLQ120L3S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; L3 Technology: Advanced Trench FS Fast IGBT Collector current: 100A Case: L3 Gate-emitter voltage: ±20V Pulsed collector current: 400A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Topology: 3-level inverter TNPC; NTC thermistor Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 16 шт | товар відсутній | |||||||||||||||||
GD2025 | INTEL | TQFP | на замовлення 735 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||
GD2026 | Burndy | Cable Accessories Grounding Cast Copper Alloy | товар відсутній | |||||||||||||||||
GD2030102MAW | KYOCERA AVX Components | Cap Ceramic Single 0.001uF 25V X7R 20% (0.508 X 0.508 X 0.165mm) Pad SMD 125°C Waffle | товар відсутній | |||||||||||||||||
GD2048C | INTEL | TQFP | на замовлення 514 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||
GD20MPS12A | GeneSiC Semiconductor | 1200V 20A SiC Schottky MPS Diode | на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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GD20MPS12A | GeneSiC Semiconductor | 1200V 20A SiC Schottky MPS Diode | на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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GD20MPS12A | GeneSiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 29A; TO220-2; tube Technology: SiC Case: TO220-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Features of semiconductor devices: MPS Max. load current: 67A Max. forward voltage: 1.9V Load current: 29A Max. forward impulse current: 128A Type of diode: Schottky rectifying | на замовлення 1250 шт: термін постачання 21-30 дні (днів) |
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GD20MPS12A | GeneSiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 29A; TO220-2; tube Technology: SiC Case: TO220-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Features of semiconductor devices: MPS Max. load current: 67A Max. forward voltage: 1.9V Load current: 29A Max. forward impulse current: 128A Type of diode: Schottky rectifying кількість в упаковці: 1 шт | на замовлення 1250 шт: термін постачання 14-21 дні (днів) |
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GD20MPS12A | GeneSiC Semiconductor | SiC Schottky Diodes 1200V 20A TO-220-2 SiC Schottky MPS | на замовлення 2845 шт: термін постачання 21-30 дні (днів) |
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GD20MPS12A | GeneSiC Semiconductor | 1200V 20A SiC Schottky MPS Diode | товар відсутній | |||||||||||||||||
GD20MPS12A | GeneSiC Semiconductor | Description: DIODE SIL CARB 1.2KV 42A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 737pF @ 1V, 1MHz Current - Average Rectified (Io): 42A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V | на замовлення 2317 шт: термін постачання 21-31 дні (днів) |
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GD20MPS12H | GeneSiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 27A; TO247-2; tube Technology: SiC Case: TO247-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Features of semiconductor devices: MPS Max. load current: 67A Max. forward voltage: 1.9V Load current: 27A Max. forward impulse current: 128A Type of diode: Schottky rectifying кількість в упаковці: 1 шт | на замовлення 600 шт: термін постачання 14-21 дні (днів) |
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GD20MPS12H | GeneSiC Semiconductor | SiC Schottky Diodes 1200V 20A TO-247-2 SiC Schottky MPS | на замовлення 2974 шт: термін постачання 21-30 дні (днів) |
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GD20MPS12H | GeneSiC Semiconductor | Description: DIODE SIL CARB 1.2KV 39A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 737pF @ 1V, 1MHz Current - Average Rectified (Io): 39A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V | на замовлення 3119 шт: термін постачання 21-31 дні (днів) |
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GD20MPS12H | GeneSiC Semiconductor | Silicon Carbide Schottky Diode | товар відсутній | |||||||||||||||||
GD20MPS12H | GeneSiC Semiconductor | Silicon Carbide Schottky Diode | товар відсутній | |||||||||||||||||
GD20MPS12H | GeneSiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 27A; TO247-2; tube Technology: SiC Case: TO247-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Features of semiconductor devices: MPS Max. load current: 67A Max. forward voltage: 1.9V Load current: 27A Max. forward impulse current: 128A Type of diode: Schottky rectifying | на замовлення 600 шт: термін постачання 21-30 дні (днів) |
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GD20MPS12H | GeneSiC Semiconductor | 1200V 20A SiC Schottky MPS Diode | товар відсутній | |||||||||||||||||
GD20PJX65F1S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A Technology: Trench FS IGBT Collector current: 20A Case: F1.1 Gate-emitter voltage: ±20V Pulsed collector current: 40A Semiconductor structure: diode/transistor Max. off-state voltage: 650V Electrical mounting: Press-in PCB Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Mechanical mounting: screw Type of module: IGBT | товар відсутній | |||||||||||||||||
GD20PJX65F1S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A Technology: Trench FS IGBT Collector current: 20A Case: F1.1 Gate-emitter voltage: ±20V Pulsed collector current: 40A Semiconductor structure: diode/transistor Max. off-state voltage: 650V Electrical mounting: Press-in PCB Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||||
GD20PJX65F1S | STARPOWER | Description: STARPOWER - GD20PJX65F1S - IGBT-Modul, PIM-Dreiphasen-Eingangsgleichrichter, 35 A, 1.45 V, 102 W, 150 °C, Modul tariffCode: 85412900 Transistormontage: Modul rohsCompliant: YES IGBT-Technologie: Trench/Feldstop hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.45V Dauer-Kollektorstrom: 35A usEccn: EAR99 IGBT-Anschluss: Lötanschluss euEccn: NLR Verlustleistung: 102W Bauform - Transistor: Modul Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V IGBT-Konfiguration: PIM-Dreiphasen-Eingangsgleichrichter productTraceability: No Betriebstemperatur, max.: 150°C SVHC: To Be Advised | на замовлення 48 шт: термін постачання 21-31 дні (днів) |
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GD20PJX65L2S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A Technology: Trench FS IGBT Collector current: 20A Case: L2.2 Gate-emitter voltage: ±20V Pulsed collector current: 40A Semiconductor structure: diode/transistor Max. off-state voltage: 650V Electrical mounting: Press-in PCB Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Mechanical mounting: screw Type of module: IGBT | товар відсутній | |||||||||||||||||
GD20PJX65L2S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A Technology: Trench FS IGBT Collector current: 20A Case: L2.2 Gate-emitter voltage: ±20V Pulsed collector current: 40A Semiconductor structure: diode/transistor Max. off-state voltage: 650V Electrical mounting: Press-in PCB Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||||
GD20PJX65L2S | STARPOWER | Description: STARPOWER - GD20PJX65L2S - IGBT-Modul, PIM-Dreiphasen-Eingangsgleichrichter, 40 A, 1.45 V, 129 W, 150 °C, Modul tariffCode: 85412900 Transistormontage: Modul rohsCompliant: YES IGBT-Technologie: Trench/Feldstop hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.45V Dauer-Kollektorstrom: 40A usEccn: EAR99 IGBT-Anschluss: Lötanschluss euEccn: NLR Verlustleistung: 129W Bauform - Transistor: Modul Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V IGBT-Konfiguration: PIM-Dreiphasen-Eingangsgleichrichter productTraceability: No Betriebstemperatur, max.: 150°C SVHC: To Be Advised | на замовлення 21 шт: термін постачання 21-31 дні (днів) |
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GD21150-AC | INTEL | 97+ BGA | на замовлення 2035 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||
GD21150AC | INTEL | на замовлення 150 шт: термін постачання 14-28 дні (днів) | ||||||||||||||||||
GD21150AC 830011 | Intel | PCI-TO-PCI BRIDGE | товар відсутній | |||||||||||||||||
GD2115QAC | на замовлення 587 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||
GD22-MT | Laird Technologies IAS | Description: ANT GRID 14/19DBI 16" GALV STEEL | товар відсутній | |||||||||||||||||
GD22-MT | Laird | Antennas Grid,Moto | товар відсутній | |||||||||||||||||
GD22-TR | Laird | Antennas Grid,Trango | товар відсутній | |||||||||||||||||
GD22-TR | Laird Technologies IAS | Description: ANT GRID 14/19DBI 16" TRANGO | товар відсутній | |||||||||||||||||
GD225HFX170C6S | STARPOWER SEMICONDUCTOR | GD225HFX170C6S IGBT modules | товар відсутній | |||||||||||||||||
GD225HFY120C6S | STARPOWER | Description: STARPOWER - GD225HFY120C6S - IGBT-Modul, Halbbrücke, 368 A, 2 V, 1.229 kW, 150 °C, Module tariffCode: 85412900 Transistormontage: Platte rohsCompliant: YES IGBT-Technologie: Trench/Feldstop Sperrschichttemperatur Tj, max.: 150°C hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2V Dauer-Kollektorstrom: 368A usEccn: EAR99 IGBT-Anschluss: Stiftbolzen Kollektor-Emitter-Sättigungsspannung Vce(on): 2V Verlustleistung Pd: 1.229kW euEccn: NLR Verlustleistung: 1.229kW Bauform - Transistor: Module Kollektor-Emitter-Spannung V(br)ceo: 1.2kV Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2kV IGBT-Konfiguration: Halbbrücke productTraceability: No DC-Kollektorstrom: 368A Betriebstemperatur, max.: 150°C SVHC: No SVHC (17-Dec-2015) | на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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GD225HFY120C6S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A Pulsed collector current: 450A Collector current: 225A Gate-emitter voltage: ±20V Electrical mounting: Press-in PCB; screw Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C6 62mm Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge кількість в упаковці: 10 шт | товар відсутній | |||||||||||||||||
GD225HFY120C6S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A Pulsed collector current: 450A Collector current: 225A Gate-emitter voltage: ±20V Electrical mounting: Press-in PCB; screw Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C6 62mm Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge | товар відсутній | |||||||||||||||||
GD24-15 | Laird Technologies | Antenna Grid Dish 15dB Gain 2485MHz | на замовлення 33 шт: термін постачання 21-31 дні (днів) |
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GD24-15P-NF | Laird Technologies IAS | Description: ANT GRID 15DBI 2.4GHZ 30" N FEM | товар відсутній | |||||||||||||||||
GD24-15P-NF | Laird Connectivity | Antennas Grid,Wire,240-30in,N F | товар відсутній | |||||||||||||||||
GD24-15P-NM | Laird Connectivity | Antennas Grid,Wire,240-30in,N M | товар відсутній | |||||||||||||||||
GD24-15P-NM | Laird Technologies IAS | Description: ANT GRID 15DBI 2.4GHZ 30" N MALE | товар відсутній | |||||||||||||||||
GD24-15P-RSMA | Laird Connectivity | Antennas Grid,Wire,240-30in,R SMAM | товар відсутній | |||||||||||||||||
GD24-15P-RSMA | Laird Connectivity Inc. | Description: RF ANT 2.4GHZ GRID CAB BRKT 30" | товар відсутній | |||||||||||||||||
GD24-15P-RTNC | TE Connectivity Laird | Description: RF ANT 2.4GHZ GRID CAB BRKT 30" Features: Cable - 762mm Packaging: Bulk Mounting Type: Bracket Mount Frequency Range: 2.4GHz ~ 2.485GHz Applications: WiMax™, WLAN Gain: 15dBi Termination: RP-TNC Number of Bands: 1 VSWR: 1.5 Antenna Type: Parabolic Grid Height (Max): 16.000" (406.40mm) Frequency Group: UHF (2GHz ~ 3GHz) Frequency (Center/Band): 2.4GHz RF Family/Standard: WiFi Part Status: Active Power - Max: 100 W | товар відсутній | |||||||||||||||||
GD24-15P-RTNC | Laird Connectivity | Antennas Grid,Wire,240-30in,R TNM | товар відсутній | |||||||||||||||||
GD24-19P-NF | Laird Connectivity | Antennas Grid,Wire,240-30in,N F | товар відсутній | |||||||||||||||||
GD24-19P-NF | Laird Technologies IAS | Description: ANT GRID 19DBI 2.4GHZ 30" N FEM | товар відсутній | |||||||||||||||||
GD24-19P-NM | Laird Technologies IAS | Description: ANT GRID 19DBI 2.4GHZ 30" N MALE | товар відсутній | |||||||||||||||||
GD24-19P-NM | Laird Connectivity | Antennas Grid,Wire,240-30in,N M | товар відсутній | |||||||||||||||||
GD24-19P-RSMA | Laird Connectivity | Antennas Grid,Wire,240-30in,R SMAM | товар відсутній | |||||||||||||||||
GD24-19P-RSMA | Laird Connectivity Inc. | Description: RF ANT 2.4GHZ GRID CAB BRKT 30" | товар відсутній | |||||||||||||||||
GD24-19P-RTNC | Laird Connectivity | Antennas Grid,Wire,240-30in,R TNM | товар відсутній | |||||||||||||||||
GD24-19P-RTNC | TE Connectivity Laird | Description: RF ANT 2.4GHZ GRID CAB BRKT 30" Features: Cable - 762mm Packaging: Bulk Mounting Type: Bracket Mount Frequency Range: 2.4GHz ~ 2.485GHz Applications: WiMax™, WLAN Gain: 19dBi Termination: RP-TNC Number of Bands: 1 VSWR: 1.5 Antenna Type: Parabolic Grid Height (Max): 24.000" (609.60mm) Frequency Group: UHF (2GHz ~ 3GHz) Frequency (Center/Band): 2.4GHz RF Family/Standard: WiFi Part Status: Active Power - Max: 100 W | товар відсутній | |||||||||||||||||
GD24-24 | Laird Technologies | ANTENNA UNIT | на замовлення 18 шт: термін постачання 21-31 дні (днів) |
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GD24-24P-NF-EZ | Laird | Antennas Grid,Wire,240-30in,N F | товар відсутній | |||||||||||||||||
GD24-24P-NF-EZ | Laird Technologies IAS | Description: RF ANT 2.4GHZ GRID CAB BRKT 30" | товар відсутній | |||||||||||||||||
GD24-24P-NM-EZ | Laird | Antennas Grid,Wire,240-30in,N M | товар відсутній | |||||||||||||||||
GD24-24P-NM-EZ | Laird Technologies IAS | Description: RF ANT 2.4GHZ GRID CAB BRKT 30" | товар відсутній | |||||||||||||||||
GD24-24P-RSMA | TE Connectivity Laird | Description: RF ANT 2.4GHZ GRID CAB BRKT 30" Features: Cable - 762mm Packaging: Bulk Mounting Type: Bracket Mount Frequency Range: 2.4GHz ~ 2.485GHz Applications: WiMax™, WLAN Gain: 24dBi Termination: RP-SMA Male Number of Bands: 1 VSWR: 1.5 Antenna Type: Parabolic Grid Height (Max): 36.000" (914.40mm) Frequency Group: UHF (2GHz ~ 3GHz) Frequency (Center/Band): 2.4GHz RF Family/Standard: WiFi Part Status: Active Power - Max: 100 W | товар відсутній | |||||||||||||||||
GD24-24P-RSMA | Laird Connectivity | Antennas Grid,Wire,240-30in,R SMAM | товар відсутній | |||||||||||||||||
GD24-24P-RTNC | Laird | Antennas Grid,Wire,240-30in,R TNM | товар відсутній | |||||||||||||||||
GD24-24P-RTNC | TE Connectivity Laird | Description: RF ANT 2.4GHZ GRID CAB BRKT 30" Features: Cable - 762mm Packaging: Bulk Mounting Type: Bracket Mount Frequency Range: 2.4GHz ~ 2.485GHz Applications: WiMax™, WLAN Gain: 24dBi Termination: RP-TNC Number of Bands: 1 VSWR: 1.5 Antenna Type: Parabolic Grid Height (Max): 36.000" (914.40mm) Frequency Group: UHF (2GHz ~ 3GHz) Frequency (Center/Band): 2.4GHz RF Family/Standard: WiFi Part Status: Active Power - Max: 100 W | товар відсутній | |||||||||||||||||
GD24-24P-RTNC-60 | Laird Connectivity | Antennas Grid,Wire,240-60in,R TNM | товар відсутній | |||||||||||||||||
GD24-24P-RTNC-60 | TE Connectivity Laird | Description: RF ANT 2.4GHZ GRID CAB BRKT 30" Features: Cable - 762mm Packaging: Bulk Mounting Type: Bracket Mount Frequency Range: 2.4GHz ~ 2.485GHz Applications: WiMax™, WLAN Gain: 24dBi Termination: RP-TNC Number of Bands: 1 VSWR: 1.5 Antenna Type: Parabolic Grid Height (Max): 36.000" (914.40mm) Frequency Group: UHF (2GHz ~ 3GHz) Frequency (Center/Band): 2.4GHz RF Family/Standard: WiFi Power - Max: 100 W | товар відсутній | |||||||||||||||||
GD2400SGX170C4S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw Type of module: IGBT Semiconductor structure: common gate; transistor/transistor Max. off-state voltage: 1.7kV Case: C4 140mm Electrical mounting: screw Topology: IGBT x3 Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 2.4kA Pulsed collector current: 4.8kA Technology: Trench FS IGBT | товар відсутній | |||||||||||||||||
GD2400SGX170C4S | STARPOWER | Description: STARPOWER - GD2400SGX170C4S - IGBT-Modul, Einfach, 2.4 kA, 1.85 V, 150 °C, Modul tariffCode: 85412900 Transistormontage: Platte rohsCompliant: YES IGBT-Technologie: Trench-Transistor Sperrschichttemperatur Tj, max.: 150°C hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.85V Dauer-Kollektorstrom: 2.4kA usEccn: EAR99 IGBT-Anschluss: Stiftbolzen Kollektor-Emitter-Sättigungsspannung Vce(on): 1.85V Verlustleistung Pd: - euEccn: NLR Verlustleistung: - Bauform - Transistor: Modul Kollektor-Emitter-Spannung V(br)ceo: 1.7kV Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.7kV IGBT-Konfiguration: Einfach productTraceability: No DC-Kollektorstrom: 2.4kA Betriebstemperatur, max.: 150°C SVHC: To Be Advised | на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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GD2400SGX170C4S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw Type of module: IGBT Semiconductor structure: common gate; transistor/transistor Max. off-state voltage: 1.7kV Case: C4 140mm Electrical mounting: screw Topology: IGBT x3 Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 2.4kA Pulsed collector current: 4.8kA Technology: Trench FS IGBT кількість в упаковці: 8 шт | товар відсутній | |||||||||||||||||
GD2400SGY120C3S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; Urmax: 1200V Max. off-state voltage: 1.2kV Semiconductor structure: common gate; transistor/transistor Gate-emitter voltage: ±20V Collector current: 2.4kA Pulsed collector current: 4.8kA Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: Advanced Trench FS IGBT Topology: single transistor Case: C3 130mm | товар відсутній | |||||||||||||||||
GD2400SGY120C3S | STARPOWER | Description: STARPOWER - GD2400SGY120C3S - IGBT-Modul, Einfach, 3.353 kA, 1.7 V, 10.2 kW, 150 °C, Module tariffCode: 85412900 Transistormontage: Platte rohsCompliant: YES IGBT-Technologie: Trench-Transistor Sperrschichttemperatur Tj, max.: 150°C hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.7V Dauer-Kollektorstrom: 3.353kA usEccn: EAR99 IGBT-Anschluss: Stiftbolzen Kollektor-Emitter-Sättigungsspannung Vce(on): 1.7V Verlustleistung Pd: 10.2kW euEccn: NLR Verlustleistung: 10.2kW Bauform - Transistor: Module Kollektor-Emitter-Spannung V(br)ceo: 1.2kV Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2kV IGBT-Konfiguration: Einfach productTraceability: No DC-Kollektorstrom: 3.353kA Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | на замовлення 16 шт: термін постачання 21-31 дні (днів) |
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GD2400SGY120C3S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; Urmax: 1200V Max. off-state voltage: 1.2kV Semiconductor structure: common gate; transistor/transistor Gate-emitter voltage: ±20V Collector current: 2.4kA Pulsed collector current: 4.8kA Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: Advanced Trench FS IGBT Topology: single transistor Case: C3 130mm кількість в упаковці: 8 шт | товар відсутній | |||||||||||||||||
GD2400SGY120C4S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw Max. off-state voltage: 1.2kV Semiconductor structure: common gate; transistor/transistor Gate-emitter voltage: ±20V Collector current: 2.4kA Pulsed collector current: 4.8kA Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: Advanced Trench FS IGBT Topology: IGBT x3 Case: C4 140mm кількість в упаковці: 8 шт | товар відсутній | |||||||||||||||||
GD2400SGY120C4S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw Max. off-state voltage: 1.2kV Semiconductor structure: common gate; transistor/transistor Gate-emitter voltage: ±20V Collector current: 2.4kA Pulsed collector current: 4.8kA Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: Advanced Trench FS IGBT Topology: IGBT x3 Case: C4 140mm | товар відсутній | |||||||||||||||||
GD2400SGY120C4S | STARPOWER | Description: STARPOWER - GD2400SGY120C4S - IGBT-Modul, Einfach, 2.4 kA, 1.7 V, 150 °C, Modul tariffCode: 85412900 Transistormontage: Platte rohsCompliant: YES IGBT-Technologie: Trench-Transistor Sperrschichttemperatur Tj, max.: 150°C hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.7V Dauer-Kollektorstrom: 2.4kA usEccn: EAR99 IGBT-Anschluss: Stiftbolzen Kollektor-Emitter-Sättigungsspannung Vce(on): 1.7V Verlustleistung Pd: - euEccn: NLR Verlustleistung: - Bauform - Transistor: Modul Kollektor-Emitter-Spannung V(br)ceo: 1.2kV Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2kV IGBT-Konfiguration: Einfach productTraceability: No DC-Kollektorstrom: 2.4kA Betriebstemperatur, max.: 150°C SVHC: To Be Advised | на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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GD24BP-14P-NF | Laird Connectivity | Antennas Grid,Wire,240-30in,N F | товар відсутній | |||||||||||||||||
GD24BP-14P-NF | Laird Connectivity Inc. | Description: RF ANT 2.4GHZ GRID N FEM BRK 30" | товар відсутній | |||||||||||||||||
GD24BP-18P-NF | Laird Connectivity | Antennas Grid,Wire,240-30in,N F | товар відсутній | |||||||||||||||||
GD24BP-18P-NF | TE Connectivity Laird | Description: RF ANT 2.4GHZ GRID N FEM BRK 30" Packaging: Bulk Mounting Type: Bracket Mount Frequency Range: 2.4GHz ~ 2.485GHz Gain: 18dBi Termination: N Type Female Number of Bands: 1 VSWR: 1.5 Antenna Type: Parabolic Grid Frequency Group: UHF (2GHz ~ 3GHz) Frequency (Center/Band): 2.4GHz Part Status: Active | товар відсутній | |||||||||||||||||
GD24BP-23P-NF | TE Connectivity Laird | Description: RF ANT 2.4GHZ GRID N FEM BRK 30" Packaging: Bulk Mounting Type: Bracket Mount Frequency Range: 2.4GHz ~ 2.485GHz Gain: 23dBi Termination: N Type Female Number of Bands: 1 VSWR: 1.5 Antenna Type: Parabolic Grid Frequency Group: UHF (2GHz ~ 3GHz) Frequency (Center/Band): 2.4GHz Part Status: Active | товар відсутній | |||||||||||||||||
GD24BP-23P-NF | Laird Connectivity | Antennas Grid,Wire,240-30in,N F | товар відсутній | |||||||||||||||||
GD24BP-23P-NM | Laird Connectivity | Antennas Grid,Wire,240-30in,N M | товар відсутній | |||||||||||||||||
GD24BP-23P-NM | TE Connectivity Laird | Description: RF ANT 2.4GHZ GRID N 30" Packaging: Bulk Mounting Type: Bracket Mount Frequency Range: 2.4GHz ~ 2.485GHz Gain: 23dBi Termination: N Type Male Number of Bands: 1 VSWR: 1.5 Antenna Type: Parabolic Grid Frequency Group: UHF (2GHz ~ 3GHz) Frequency (Center/Band): 2.4GHz Part Status: Active | товар відсутній | |||||||||||||||||
GD24V_4A2AV1-001 | Vicor | Modular Power Supplies GD24V4.2AV124V4.2AV1 | товар відсутній | |||||||||||||||||
GD24V_4A2AV1-001 | Vicor Corporation | Description: GD24V/4.2AV1-24V/4.2AV1 | товар відсутній | |||||||||||||||||
GD25-15P-NF | Laird | Antennas Grid,Wire,240-30in,N F | товар відсутній | |||||||||||||||||
GD25-15P-NF | Laird Technologies IAS | Description: ANT GRID 15DBI 2.5-2.7G 30" NFEM | товар відсутній | |||||||||||||||||
GD25-15P-NM | Laird | Antennas Grid,Wire,240-30in,N M | товар відсутній | |||||||||||||||||
GD25-15P-NM | Laird Technologies IAS | Description: ANT GRID 15DBI 2.5-2.7G 30"NMALE | товар відсутній | |||||||||||||||||
GD25-19P-NF | Laird Technologies IAS | Description: ANT GRID 19DBI 2.5-2.7G 30" NFEM | товар відсутній | |||||||||||||||||
GD25-19P-NF | Laird | Antennas Grid,Wire,240-30in,N F | товар відсутній | |||||||||||||||||
GD25-19P-NM | Laird | Antennas Grid,Wire,240-30in,N M | товар відсутній | |||||||||||||||||
GD25-19P-NM | Laird Technologies IAS | Description: ANT GRID 19DBI 2.5-2.7G 30"NMALE | товар відсутній | |||||||||||||||||
GD25-24P-NF | Laird Technologies IAS | Description: ANT GRID 24DBI 2.5-2.7G 30" NFEM | товар відсутній | |||||||||||||||||
GD25-24P-NF | Laird | Antennas Grid,Wire,240-30in,N F | товар відсутній | |||||||||||||||||
GD25-24P-NM | Laird | Antennas Grid,Wire,240-30in,N M | товар відсутній | |||||||||||||||||
GD25-24P-NM | Laird Technologies IAS | Description: ANT GRID 24DBI 2.5-2.7G 30"NMALE | товар відсутній | |||||||||||||||||
GD2530142ZA6N | KYOCERA AVX | Ultra Maxi Series Si ngle Layer Capacito | товар відсутній | |||||||||||||||||
GD2530142ZA6N | KYOCERA AVX | Description: CAP CER Tolerance: -20%, +80% Packaging: Tray Voltage - Rated: 25V Package / Case: Nonstandard SMD Temperature Coefficient: X7R Size / Dimension: 0.025" L x 0.025" W (0.64mm x 0.64mm) Mounting Type: Surface Mount, SLCC Operating Temperature: -55°C ~ 125°C Applications: RF, Microwave, High Frequency Thickness (Max): 0.008" (0.20mm) Part Status: Active Capacitance: 1400 pF | на замовлення 380 шт: термін постачання 21-31 дні (днів) | |||||||||||||||||
GD2530152MA6N | KYOCERA AVX | Description: MICRO-W SLC Tolerance: ±20% Packaging: Tray Voltage - Rated: 25V Package / Case: Nonstandard SMD Temperature Coefficient: X7R Size / Dimension: 0.025" L x 0.025" W (0.64mm x 0.64mm) Mounting Type: Surface Mount, SLCC Operating Temperature: -55°C ~ 125°C Applications: General Purpose Thickness (Max): 0.007" (0.18mm) Capacitance: 1500 pF | товар відсутній | |||||||||||||||||
GD2530152ZA6N | KYOCERA AVX | Description: MICRO-W SLC Tolerance: -20%, +80% Packaging: Tray Voltage - Rated: 25V Package / Case: Nonstandard SMD Temperature Coefficient: X7R Size / Dimension: 0.025" L x 0.025" W (0.64mm x 0.64mm) Mounting Type: Surface Mount, SLCC Operating Temperature: -55°C ~ 125°C Applications: General Purpose Thickness (Max): 0.007" (0.18mm) Capacitance: 1500 pF | товар відсутній | |||||||||||||||||
GD25B127CSIG | GigaDevice | NOR Flash 128Mbit NOR Flash /Quad Enable /3.3V /SOP8 208mil /Industrial(-40? to +85?) /Tube | товар відсутній | |||||||||||||||||
GD25B127CSIGR | GigaDevice | NOR Flash 128Mbit NOR Flash /Quad Enable /3.3V /SOP8 208mil /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25B127CWIGR | GigaDevice | NOR Flash 128Mbit NOR Flash /Quad Enable /3.3V /WSON8 6*5mm /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25B127DSIGR | GigaDevice | NOR Flash 128Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25B128ESIGR | GigaDevice | NOR Flash | на замовлення 1715 шт: термін постачання 21-30 дні (днів) |
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GD25B128ESIGR | GigaDevice Semiconductor (HK) Limited | Description: 128MBIT, 3.3V, SOP8 208MIL, INDU Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | товар відсутній | |||||||||||||||||
GD25B128ESIGR | GigaDevice Semiconductor (HK) Limited | Description: 128MBIT, 3.3V, SOP8 208MIL, INDU Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | на замовлення 1564 шт: термін постачання 21-31 дні (днів) |
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GD25B128ESIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Tray Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | товар відсутній | |||||||||||||||||
GD25B128ESIGY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25B128EWIGR | GigaDevice Semiconductor (HK) Limited | Description: 128MBIT, 3.3V, WSON8 6*5MM, INDU Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | товар відсутній | |||||||||||||||||
GD25B128EWIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25B128EWIGR | GigaDevice Semiconductor (HK) Limited | Description: 128MBIT, 3.3V, WSON8 6*5MM, INDU Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | на замовлення 2893 шт: термін постачання 21-31 дні (днів) |
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GD25B128EWIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | товар відсутній | |||||||||||||||||
GD25B128EWIGY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25B128EYIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25B128EYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | товар відсутній | |||||||||||||||||
GD25B128EYIGY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25B128EYIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | товар відсутній | |||||||||||||||||
GD25B16EEIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25B16ES2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Memory Format: FLASH Supplier Device Package: 8-SOP Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 | товар відсутній | |||||||||||||||||
GD25B16ES2GR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25B16ESIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25B16ETIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25B256DFIGR | GigaDevice | NOR Flash 256Mbit NOR Flash /3.3V /SOP16 300mil /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25B256DYIGR | GigaDevice | NOR Flash 256Mbit NOR Flash /3.3V /WSON8 8*6mm /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25B256EBIRY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25B256EBIRY | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 256MBIT SPI/QUAD 24TFBGA Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25B256EFIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 16SOP Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Memory Format: FLASH Supplier Device Package: 16-SOP Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25B256EFIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25B256EFIGY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25B256EFIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 16SOP Packaging: Tray Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Memory Format: FLASH Supplier Device Package: 16-SOP Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25B256EFIRR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25B256EFIRR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 16SOP Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Memory Format: FLASH Supplier Device Package: 16-SOP Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25B256EFIRY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25B256EFIRY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 16SOP Packaging: Tray Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Memory Format: FLASH Supplier Device Package: 16-SOP Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25B256EWIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25B256EWIGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 90µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25B256EWIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25B256EWIGY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25B256EYIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25B256EYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25B256EYIGY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25B256EYIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25B32CSIG | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /Tube | товар відсутній | |||||||||||||||||
GD25B32CSIGR | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25B32CWIGR | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /WSON8 6*5mm /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25B32ES2GR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25B32ES2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Memory Format: FLASH Supplier Device Package: 8-SOP Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 | товар відсутній | |||||||||||||||||
GD25B32ESIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25B32ETIGR | GigaDevice Semiconductor (HK) Limited | Description: 32MBIT, 3.3V, SOP8 150MIL, INDUS Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 | на замовлення 2970 шт: термін постачання 21-31 дні (днів) |
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GD25B32ETIGR | GigaDevice Semiconductor (HK) Limited | Description: 32MBIT, 3.3V, SOP8 150MIL, INDUS Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 | товар відсутній | |||||||||||||||||
GD25B32EWIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25B512MEFIRR | GigaDevice | NOR Flash | на замовлення 216 шт: термін постачання 21-30 дні (днів) |
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GD25B512MEYIGR | GigaDevice | NOR Flash | на замовлення 2780 шт: термін постачання 21-30 дні (днів) |
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GD25B64CSIG | GigaDevice | NOR Flash 64Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /Tube | товар відсутній | |||||||||||||||||
GD25B64CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 | товар відсутній | |||||||||||||||||
GD25B64CSIGR | GigaDevice | NOR Flash 64Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25B64CWIGR | GigaDevice | NOR Flash 64Mbit NOR Flash /3.3V /WSON8 6*5mm /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25B64CYIGR | GigaDevice | NOR Flash 64Mbit NOR Flash /3.3V /WSON8 8*6mm /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25B64ENIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x4) Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 | товар відсутній | |||||||||||||||||
GD25B64ENIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25B64ESIGR | GigaDevice | NOR Flash | на замовлення 2914 шт: термін постачання 21-30 дні (днів) |
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GD25B64ESIGR | GigaDevice Semiconductor (HK) Limited | Description: 64MBIT, 3.3V, SOP8 208MIL, INDUS Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 | на замовлення 405 шт: термін постачання 21-31 дні (днів) |
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GD25B64ESIGR | GigaDevice Semiconductor (HK) Limited | Description: 64MBIT, 3.3V, SOP8 208MIL, INDUS Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 | товар відсутній | |||||||||||||||||
GD25B64EWIGR | GigaDevice Semiconductor (HK) Limited | Description: 64MBIT, 3.3V, WSON8 6*5MM, INDUS Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 | товар відсутній | |||||||||||||||||
GD25B64EWIGR | GigaDevice Semiconductor (HK) Limited | Description: 64MBIT, 3.3V, WSON8 6*5MM, INDUS Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 | на замовлення 2548 шт: термін постачання 21-31 дні (днів) |
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GD25B64EWIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25B64EWIGY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25D05BOIGR | GigaDevice | NOR Flash 512Kbit NOR Flash /3.3V /TSSOP8 173mil /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25D05BTIG | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512kbFLASH; Dual I/O,SPI; 80MHz; 2.7÷3.6V; SOP8 Mounting: SMD Operating frequency: 80MHz Interface: Dual I/O; SPI Operating temperature: -40...85°C Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Kind of interface: serial Memory: 512kb FLASH Case: SOP8 Operating voltage: 2.7...3.6V | на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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GD25D05BTIG | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512kbFLASH; Dual I/O,SPI; 80MHz; 2.7÷3.6V; SOP8 Mounting: SMD Operating frequency: 80MHz Interface: Dual I/O; SPI Operating temperature: -40...85°C Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Kind of interface: serial Memory: 512kb FLASH Case: SOP8 Operating voltage: 2.7...3.6V кількість в упаковці: 1 шт | на замовлення 17 шт: термін постачання 14-21 дні (днів) |
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GD25D05CEIGR | GigaDevice | NOR Flash 512Kbit NOR Flash /3.3V /USON8 3*2*0.45mm /Industrial(-40? to +85?) /T&R | на замовлення 2897 шт: термін постачання 21-30 дні (днів) |
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GD25D05CKIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 512KBIT SPI/DUAL 8USON | товар відсутній | |||||||||||||||||
GD25D05CKIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 512KBIT SPI/DUAL 8USON | на замовлення 2385 шт: термін постачання 21-31 дні (днів) | |||||||||||||||||
GD25D05CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 512KBIT SPI/DUAL 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 4ms Memory Interface: SPI - Dual I/O Memory Organization: 64K x 8 DigiKey Programmable: Not Verified | на замовлення 12401 шт: термін постачання 21-31 дні (днів) |
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GD25D05CTIGR | GigaDevice | NOR Flash 512Kbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /T&R | на замовлення 4964 шт: термін постачання 21-30 дні (днів) |
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GD25D05CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 512KBIT SPI/DUAL 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 4ms Memory Interface: SPI - Dual I/O Memory Organization: 64K x 8 DigiKey Programmable: Not Verified | на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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GD25D10BOIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 1MbFLASH; Dual I/O,SPI; 80MHz; 2.7÷3.6V; TSSOP8 Mounting: SMD Operating frequency: 80MHz Interface: Dual I/O; SPI Operating temperature: -40...85°C Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Kind of interface: serial Memory: 1Mb FLASH Case: TSSOP8 Operating voltage: 2.7...3.6V кількість в упаковці: 1 шт | на замовлення 95 шт: термін постачання 14-21 дні (днів) |
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GD25D10BOIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 1MbFLASH; Dual I/O,SPI; 80MHz; 2.7÷3.6V; TSSOP8 Mounting: SMD Operating frequency: 80MHz Interface: Dual I/O; SPI Operating temperature: -40...85°C Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Kind of interface: serial Memory: 1Mb FLASH Case: TSSOP8 Operating voltage: 2.7...3.6V | на замовлення 95 шт: термін постачання 21-30 дні (днів) |
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GD25D10BTIG | GigaDevice | NOR Flash 1Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /Tube | товар відсутній | |||||||||||||||||
GD25D10BTIGR | GigaDevice | NOR Flash 1Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25D10BTIGRR | GigaDevice | NOR Flash Use P/N GD25D10BTIGR | товар відсутній | |||||||||||||||||
GD25D10CEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1MBIT SPI/DUAL 8USON Packaging: Cut Tape (CT) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 50µs, 4ms Memory Interface: SPI - Dual I/O Memory Organization: 128K x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25D10CEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1MBIT SPI/DUAL 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 50µs, 4ms Memory Interface: SPI - Dual I/O Memory Organization: 128K x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25D10CEIGR | GigaDevice | NOR Flash 1Mbit NOR Flash /3.3V /USON8 3*2*0.45mm /Industrial(-40? to +85?) /T&R | на замовлення 3365 шт: термін постачання 21-30 дні (днів) |
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GD25D10CKIGR | GigaDevice | NOR Flash 1Mbit NOR Flash /3.3V /USON8 1.5*1.5*0.45mm /Industrial(-40? to +85?) /T&R | на замовлення 11538 шт: термін постачання 21-30 дні (днів) |
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GD25D10CKIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1MBIT SPI/DUAL 8USON | на замовлення 3680 шт: термін постачання 21-31 дні (днів) | |||||||||||||||||
GD25D10CKIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1MBIT SPI/DUAL 8USON | на замовлення 3000 шт: термін постачання 21-31 дні (днів) | |||||||||||||||||
GD25D10CTEG | GigaDevice | NOR Flash 1Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +125?) /Tube | товар відсутній | |||||||||||||||||
GD25D10CTEGR | GigaDevice | NOR Flash 1Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +125?) /T&R | на замовлення 1490 шт: термін постачання 21-30 дні (днів) |
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GD25D10CTIG | GigaDevice | NOR Flash 1Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /Tube | товар відсутній | |||||||||||||||||
GD25D10CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1MBIT SPI/DUAL I/O 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 4ms Memory Interface: SPI - Dual I/O Memory Organization: 128K x 8 DigiKey Programmable: Not Verified | на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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GD25D10CTIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 1MbFLASH; Dual I/O,SPI; 100MHz; 2.7÷3.6V; SOP8 Type of integrated circuit: FLASH memory Mounting: SMD Case: SOP8 Operating temperature: -40...85°C Interface: Dual I/O; SPI Kind of memory: NOR Flash Operating frequency: 100MHz Memory: 1Mb FLASH Operating voltage: 2.7...3.6V | на замовлення 108 шт: термін постачання 21-30 дні (днів) |
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GD25D10CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1MBIT SPI/DUAL I/O 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 4ms Memory Interface: SPI - Dual I/O Memory Organization: 128K x 8 DigiKey Programmable: Not Verified | на замовлення 7073 шт: термін постачання 21-31 дні (днів) |
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GD25D10CTIGR | GigaDevice | NOR Flash 1Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /T&R | на замовлення 4323 шт: термін постачання 21-30 дні (днів) |
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GD25D10CTIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 1MbFLASH; Dual I/O,SPI; 100MHz; 2.7÷3.6V; SOP8 Type of integrated circuit: FLASH memory Mounting: SMD Case: SOP8 Operating temperature: -40...85°C Interface: Dual I/O; SPI Kind of memory: NOR Flash Operating frequency: 100MHz Memory: 1Mb FLASH Operating voltage: 2.7...3.6V кількість в упаковці: 1 шт | на замовлення 108 шт: термін постачання 14-21 дні (днів) |
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GD25D20CEIGR | GigaDevice | NOR Flash 2Mbit NOR Flash /3.3V /USON8 3*2*0.45mm /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25D20CTIG | GigaDevice | NOR Flash 2Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /Tube | товар відсутній | |||||||||||||||||
GD25D40CEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/DUAL 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x2) Write Cycle Time - Word, Page: 50µs, 4ms Memory Interface: SPI - Dual I/O Access Time: 6 ns Memory Organization: 512K x 8 | товар відсутній | |||||||||||||||||
GD25D40CEIGR | GigaDevice | NOR Flash 4Mbit NOR Flash /3.3V /USON8 3*2*0.45mm /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25D40CKIGR | GigaDevice | NOR Flash 4Mbit NOR Flash /3.3V /USON8 1.5*1.5*0.45mm /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25D40CKIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/DUAL 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-USON (1.5x1.5) Write Cycle Time - Word, Page: 50µs, 4ms Memory Interface: SPI - Dual I/O Access Time: 6 ns Memory Organization: 512K x 8 | товар відсутній | |||||||||||||||||
GD25D40CTEGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/DUAL 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 80µs, 4ms Memory Interface: SPI - Dual I/O Access Time: 6 ns Memory Organization: 512K x 8 | товар відсутній | |||||||||||||||||
GD25D40CTEGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25D40CTIG | GigaDevice | NOR Flash 4Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /Tube | товар відсутній | |||||||||||||||||
GD25D40CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/DUAL 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 4ms Memory Interface: SPI - Dual I/O Access Time: 6 ns Memory Organization: 512K x 8 | товар відсутній | |||||||||||||||||
GD25D40CTIGR | GigaDevice | NOR Flash 4Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25D40EEIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25D40EEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/DUAL 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x2) Write Cycle Time - Word, Page: 50µs, 4ms Memory Interface: SPI - Dual I/O Access Time: 6 ns Memory Organization: 512K x 8 | товар відсутній | |||||||||||||||||
GD25D40EKIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/DUAL 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-USON (1.5x1.5) Write Cycle Time - Word, Page: 50µs, 4ms Memory Interface: SPI - Dual I/O Access Time: 6 ns Memory Organization: 512K x 8 | товар відсутній | |||||||||||||||||
GD25D40EKIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25D40ETIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25D40ETIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/DUAL 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 4ms Memory Interface: SPI - Dual I/O Access Time: 6 ns Memory Organization: 512K x 8 | товар відсутній | |||||||||||||||||
GD25D80CKIGR | GigaDevice | NOR Flash 8Mbit NOR Flash /3.3V /USON8 1.5*1.5*0.45mm /Industrial(-40? to +85?) /T&R | на замовлення 138 шт: термін постачання 21-30 дні (днів) | |||||||||||||||||
GD25D80CKIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/DUAL 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-USON (1.5x1.5) Part Status: Active Write Cycle Time - Word, Page: 50µs, 4ms Memory Interface: SPI - Dual I/O Memory Organization: 1M x 8 DigiKey Programmable: Not Verified | на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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GD25D80CKIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/DUAL 8USON Packaging: Cut Tape (CT) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-USON (1.5x1.5) Part Status: Active Write Cycle Time - Word, Page: 50µs, 4ms Memory Interface: SPI - Dual I/O Memory Organization: 1M x 8 DigiKey Programmable: Not Verified | на замовлення 16245 шт: термін постачання 21-31 дні (днів) |
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GD25D80CSIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25F128ESIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25F128ESIGR | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tape & Reel (TR) | товар відсутній | |||||||||||||||||
GD25F128ESIGY | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tray | товар відсутній | |||||||||||||||||
GD25F128ESIGY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25F128FB2RY | GigaDevice | GigaDevice | товар відсутній | |||||||||||||||||
GD25F128FB2RY | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 128MBIT SPI/QUAD 24TFBGA Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 | товар відсутній | |||||||||||||||||
GD25F128FS2GR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25F128FS2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 | товар відсутній | |||||||||||||||||
GD25F128FSIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25F128FSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 | товар відсутній | |||||||||||||||||
GD25F128FW2GR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25F128FW2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 | товар відсутній | |||||||||||||||||
GD25F128FWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 | товар відсутній | |||||||||||||||||
GD25F128FWIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25F128FYAGY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25F128FYAGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 | товар відсутній | |||||||||||||||||
GD25F256FB2RY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25F256FB2RY | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 256MBIT SPI/QUAD 24TFBGA Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25F256FBARY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25F256FBARY | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH Packaging: Tray | товар відсутній | |||||||||||||||||
GD25F256FBIRY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25F256FBIRY | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 256MBIT SPI/QUAD 24TFBGA Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25F256FF2RR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH Packaging: Tape & Reel (TR) | товар відсутній | |||||||||||||||||
GD25F256FF2RR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25F256FFARR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25F256FFARR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH Packaging: Tape & Reel (TR) | товар відсутній | |||||||||||||||||
GD25F256FFIRR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25F256FFIRR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 16SOP Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25F256FFJRR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25F256FFJRR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH Packaging: Tape & Reel (TR) | товар відсутній | |||||||||||||||||
GD25F256FW2GR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25F256FW2GR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH Packaging: Tape & Reel (TR) | товар відсутній | |||||||||||||||||
GD25F256FW2GY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25F256FW2GY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25F256FWIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25F256FWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25F256FY2GR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25F256FY2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25F256FYAGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25F256FYAGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25F256FYAGY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25F256FYAGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25F256FYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25F256FYIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25F512MFB2RY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25F512MFBIRY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25F512MFFIRR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25F512MFYIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25F64FQ2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x4) Memory Interface: SPI - Quad I/O, DTR Memory Organization: 8M x 8 | товар відсутній | |||||||||||||||||
GD25F64FQ2GR | GigaDevice | GigaDevice | товар відсутній | |||||||||||||||||
GD25F64FS2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Memory Interface: SPI - Quad I/O, DTR Memory Organization: 8M x 8 | товар відсутній | |||||||||||||||||
GD25F64FS2GR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25F64FSAGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Memory Interface: SPI - Quad I/O, DTR Memory Organization: 8M x 8 | товар відсутній | |||||||||||||||||
GD25F64FSAGR | GigaDevice | GigaDevice | товар відсутній | |||||||||||||||||
GD25F64FSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Memory Interface: SPI - Quad I/O, DTR Memory Organization: 8M x 8 | товар відсутній | |||||||||||||||||
GD25F64FSIGR | GigaDevice | GigaDevice | товар відсутній | |||||||||||||||||
GD25F64FW2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Memory Interface: SPI - Quad I/O, DTR Memory Organization: 8M x 8 | товар відсутній | |||||||||||||||||
GD25F64FW2GR | GigaDevice | GigaDevice | товар відсутній | |||||||||||||||||
GD25F64FWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Memory Interface: SPI - Quad I/O, DTR Memory Organization: 8M x 8 | товар відсутній | |||||||||||||||||
GD25F64FWIGR | GigaDevice | GigaDevice | товар відсутній | |||||||||||||||||
GD25LB128DSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | товар відсутній | |||||||||||||||||
GD25LB128DSIGR | GigaDevice | NOR Flash 128Mbit NOR Flash /1.8V /SOP8 208mil /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25LB128EFIRR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 16SOP Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Memory Interface: SPI - Quad I/O, QPI, DTR Memory Organization: 16M x 8 | товар відсутній | |||||||||||||||||
GD25LB128EFIRR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LB128ESIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Memory Interface: SPI - Quad I/O, QPI, DTR Memory Organization: 16M x 8 | товар відсутній | |||||||||||||||||
GD25LB128ESIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LB128EWIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LB128EWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Memory Interface: SPI - Quad I/O, QPI, DTR Memory Organization: 16M x 8 | товар відсутній | |||||||||||||||||
GD25LB128EYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Memory Interface: SPI - Quad I/O, QPI, DTR Memory Organization: 16M x 8 | товар відсутній | |||||||||||||||||
GD25LB128EYIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LB16EEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x2) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 2M x 8 | товар відсутній | |||||||||||||||||
GD25LB16EEIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LB16ESIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 2M x 8 | товар відсутній | |||||||||||||||||
GD25LB16ESIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LB16ETIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 2M x 8 | товар відсутній | |||||||||||||||||
GD25LB16ETIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LB16EWIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LB16EWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 2M x 8 | товар відсутній | |||||||||||||||||
GD25LB256E3IRR | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 256MBIT SPI/QUAD 48WLCSP Packaging: Tape & Reel (TR) Package / Case: 48-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 48-WLCSP Write Cycle Time - Word, Page: 70µs, 1.2ms Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 6 ns Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25LB256E3IRR | GigaDevice | NOR Flash | на замовлення 904 шт: термін постачання 21-30 дні (днів) |
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GD25LB256EBARY | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 256MBIT SPI/QUAD 24TFBGA Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Write Cycle Time - Word, Page: 140µs, 3ms Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 6 ns Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25LB256EBARY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LB256EBIRY | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 256MBIT SPI/QUAD 24TFBGA Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Write Cycle Time - Word, Page: 70µs, 1.2ms Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 6 ns Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25LB256EBIRY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LB256EBJRY | GigaDevice | GigaDevice | товар відсутній | |||||||||||||||||
GD25LB256EFIRR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LB256EFIRR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 16SOP Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Write Cycle Time - Word, Page: 70µs, 1.2ms Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 6 ns Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25LB256ELIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LB256ELIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 256MBIT SPI/QUAD 32WLCSP Packaging: Tape & Reel (TR) Package / Case: 32-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 32-WLCSP Write Cycle Time - Word, Page: 70µs, 1.2ms Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 6 ns Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25LB256EWIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LB256EWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 70µs, 1.2ms Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 6 ns Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25LB256EY2GR | GigaDevice | GigaDevice | товар відсутній | |||||||||||||||||
GD25LB256EY2GY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 140µs, 2ms Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 5 ns Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25LB256EY2GY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LB256EYEGR | GigaDevice | GigaDevice | товар відсутній | |||||||||||||||||
GD25LB256EYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 70µs, 1.2ms Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 6 ns Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25LB256EYIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LB256EYIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 70µs, 1.2ms Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 6 ns Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25LB256EYIGY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LB256EYJGR | GigaDevice | GigaDevice | товар відсутній | |||||||||||||||||
GD25LB256FFIRR | GigaDevice | GigaDevice | товар відсутній | |||||||||||||||||
GD25LB256FWIGR | GigaDevice | GigaDevice | товар відсутній | |||||||||||||||||
GD25LB256FYIGR | GigaDevice | GigaDevice | товар відсутній | |||||||||||||||||
GD25LB32ES2GR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LB32ES2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 4M x 8 | товар відсутній | |||||||||||||||||
GD25LB64ENIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x4) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 | товар відсутній | |||||||||||||||||
GD25LB64ENIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LB64ESIGR | GigaDevice | NOR Flash | на замовлення 792 шт: термін постачання 21-30 дні (днів) |
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GD25LB64EWIGR | GigaDevice | NOR Flash | на замовлення 2850 шт: термін постачання 21-30 дні (днів) |
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GD25LD20CEIGR | GigaDevice | NOR Flash 2Mbit NOR Flash /1.8v /USON8 3*2*0.45mm /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25LD40CEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 4MBIT SPI/DUAL I/O 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 97µs, 6ms Memory Interface: SPI - Dual I/O Memory Organization: 512K x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25LD40CEIGR | GigaDevice | NOR Flash 4Mbit NOR Flash /1.8v /USON8 3*2*0.45mm /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25LD40CKIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/DUAL 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-USON (1.5x1.5) Write Cycle Time - Word, Page: 97µs, 6ms Memory Interface: SPI - Dual I/O Access Time: 12 ns Memory Organization: 512K x 8 | товар відсутній | |||||||||||||||||
GD25LD40CKIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LD40COIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/DUAL 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-TSSOP Write Cycle Time - Word, Page: 97µs, 6ms Memory Interface: SPI - Dual I/O Memory Organization: 512K x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25LD40COIGR | GigaDevice | NOR Flash 4Mbit NOR Flash /1.8v /TSSOP8 173mil /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25LD40CTIG | GigaDevice | NOR Flash 4Mbit NOR Flash /1.8v /SOP8 150mil /Industrial(-40? to +85?) /Tube | товар відсутній | |||||||||||||||||
GD25LD40CTIGR | GigaDevice | NOR Flash 4Mbit NOR Flash /1.8v /SOP8 150mil /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25LD40CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/DUAL I/O 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 97µs, 6ms Memory Interface: SPI - Dual I/O Memory Organization: 512K x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25LD40EEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/DUAL 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x2) Write Cycle Time - Word, Page: 100µs, 6ms Memory Interface: SPI - Dual I/O Access Time: 12 ns Memory Organization: 512K x 8 | товар відсутній | |||||||||||||||||
GD25LD40EK6IGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 6-USON (1.2x1.2) Write Cycle Time - Word, Page: 100µs, 6ms Memory Interface: SPI - Dual I/O Access Time: 12 ns Memory Organization: 512K x 8 | товар відсутній | |||||||||||||||||
GD25LD40EKIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/DUAL 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-USON (1.5x1.5) Write Cycle Time - Word, Page: 100µs, 6ms Memory Interface: SPI - Dual I/O Access Time: 12 ns Memory Organization: 512K x 8 | товар відсутній | |||||||||||||||||
GD25LD40ETIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/DUAL 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 100µs, 6ms Memory Interface: SPI - Dual I/O Access Time: 12 ns Memory Organization: 512K x 8 | товар відсутній | |||||||||||||||||
GD25LD80CEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 8MBIT SPI/DUAL I/O 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 60µs, 6ms Memory Interface: SPI - Dual I/O Memory Organization: 1M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25LD80CKIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LD80CKIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/DUAL 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-USON (1.5x1.5) Write Cycle Time - Word, Page: 97µs, 6ms Memory Interface: SPI - Dual I/O Access Time: 12 ns Memory Organization: 1M x 8 | товар відсутній | |||||||||||||||||
GD25LD80CSIG | GigaDevice | NOR Flash 8Mbit NOR Flash /1.8v /SOP8 208mil /Industrial(-40? to +85?) /Tube | товар відсутній | |||||||||||||||||
GD25LD80CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/DUAL I/O 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 6ms Memory Interface: SPI - Dual I/O Memory Organization: 1M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25LD80CSIGR | GigaDevice | NOR Flash 8Mbit NOR Flash /1.8v /SOP8 208mil /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25LD80CTIG | GigaDevice | NOR Flash 8Mbit NOR Flash /1.8v /SOP8 150mil /Industrial(-40? to +85?) /Tube | товар відсутній | |||||||||||||||||
GD25LD80CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/DUAL I/O 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 6ms Memory Interface: SPI - Dual I/O Memory Organization: 1M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25LD80ETIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/DUAL 8SOP Packaging: Tray Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 100µs, 6ms Memory Interface: SPI - Dual I/O Access Time: 12 ns Memory Organization: 1M x 8 | товар відсутній | |||||||||||||||||
GD25LD80ETIGY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LE128ELIGR | GigaDevice | NOR Flash | на замовлення 2067 шт: термін постачання 21-30 дні (днів) |
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GD25LE128ESIG | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LE128ESIGR | GigaDevice Semiconductor (HK) Limited | Description: 128MBIT, 1.8V, SOP8 208MIL, INDU Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 16M x 8 | на замовлення 1342 шт: термін постачання 21-31 дні (днів) |
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GD25LE128ESIGR | GigaDevice Semiconductor (HK) Limited | Description: 128MBIT, 1.8V, SOP8 208MIL, INDU Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 16M x 8 | товар відсутній | |||||||||||||||||
GD25LE128EWIGR | GigaDevice | NOR Flash | на замовлення 2459 шт: термін постачання 21-30 дні (днів) |
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GD25LE16C8IGR | GigaDevice | NOR Flash 16Mbit NOR Flash /1.8V /LGA8 3*2mm /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25LE16ESIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LE255EWIGR | GigaDevice | NOR Flash | на замовлення 2686 шт: термін постачання 21-30 дні (днів) |
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GD25LE32DLIGR | GigaDevice | NOR Flash 32Mbit NOR Flash /1.8V /WLCSP /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25LE32E3IGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LE32E3IGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 10WLCSP Packaging: Tape & Reel (TR) Package / Case: 10-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 10-WLCSP Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 4M x 8 | товар відсутній | |||||||||||||||||
GD25LE32EEEGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x2) Write Cycle Time - Word, Page: 100µs, 4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 4M x 8 | товар відсутній | |||||||||||||||||
GD25LE32EEIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LE32EEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x2) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 4M x 8 | товар відсутній | |||||||||||||||||
GD25LE32ELIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LE32ELIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 10WLCSP Packaging: Tape & Reel (TR) Package / Case: 10-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 10-WLCSP Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 4M x 8 | товар відсутній | |||||||||||||||||
GD25LE32ENIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LE32ENIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x4) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 4M x 8 | товар відсутній | |||||||||||||||||
GD25LE32EQIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LE32EQIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x4) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 4M x 8 | товар відсутній | |||||||||||||||||
GD25LE32ESIGR | GigaDevice Semiconductor (HK) Limited | Description: 32MBIT, 1.8V, SOP8 208MIL, INDUS Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 4M x 8 | на замовлення 1723 шт: термін постачання 21-31 дні (днів) |
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GD25LE32ESIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LE32ESIGR | GigaDevice Semiconductor (HK) Limited | Description: 32MBIT, 1.8V, SOP8 208MIL, INDUS Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 4M x 8 | товар відсутній | |||||||||||||||||
GD25LE64CLIGR | GigaDevice | NOR Flash 64Mbit NOR Flash /1.8V /WLCSP /Industrial(-40? to +85?) /T&R | на замовлення 1781 шт: термін постачання 21-30 дні (днів) | |||||||||||||||||
GD25LE64ELIGR | GigaDevice | NOR Flash | на замовлення 1996 шт: термін постачання 21-30 дні (днів) |
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GD25LE64ENIG | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LE64ENIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x4) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 | товар відсутній | |||||||||||||||||
GD25LE64ENIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LE64ESIG | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LE64ESIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LE64ESIGY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LE80ESIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LE80ETIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LF128ESIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LF32ESIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LF80EEEGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x2) Write Cycle Time - Word, Page: 100µs, 4ms Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 5.5 ns Memory Organization: 1M x 8 | товар відсутній | |||||||||||||||||
GD25LF80ESIGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 5.5 ns Memory Organization: 1M x 8 | товар відсутній | |||||||||||||||||
GD25LH16ENIGR | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tape & Reel (TR) | товар відсутній | |||||||||||||||||
GD25LH16ENIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LH32ENIGR | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tape & Reel (TR) | товар відсутній | |||||||||||||||||
GD25LH32ENIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ05CEIGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | на замовлення 6000 шт: термін постачання 21-31 дні (днів) | |||||||||||||||||
GD25LQ05CEIGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | на замовлення 6000 шт: термін постачання 21-31 дні (днів) | |||||||||||||||||
GD25LQ05CEIGR | GigaDevice | NOR Flash 512Kbit NOR Flash /1.8v /USON8 3*2*0.45mm /Industrial(-40? to +85?) /T&R | на замовлення 1505 шт: термін постачання 21-30 дні (днів) |
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GD25LQ064BWIG | GD | QFN | на замовлення 20 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||
GD25LQ10CEIGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | товар відсутній | |||||||||||||||||
GD25LQ10CEIGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | товар відсутній | |||||||||||||||||
GD25LQ10CTIGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | товар відсутній | |||||||||||||||||
GD25LQ10CTIGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | товар відсутній | |||||||||||||||||
GD25LQ128CVIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 128Mb; Quad I/O,SPI; 120MHz; 1.65÷2V; VSOP8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory capacity: 128Mb Interface: Quad I/O; SPI Operating frequency: 120MHz Case: VSOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V кількість в упаковці: 3000 шт | товар відсутній | |||||||||||||||||
GD25LQ128CVIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 128Mb; Quad I/O,SPI; 120MHz; 1.65÷2V; VSOP8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory capacity: 128Mb Interface: Quad I/O; SPI Operating frequency: 120MHz Case: VSOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V | товар відсутній | |||||||||||||||||
GD25LQ128CWIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 128Mb; Quad I/O,SPI; 120MHz; 1.65÷2V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory capacity: 128Mb Interface: Quad I/O; SPI Operating frequency: 120MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V | товар відсутній | |||||||||||||||||
GD25LQ128CWIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 128Mb; Quad I/O,SPI; 120MHz; 1.65÷2V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory capacity: 128Mb Interface: Quad I/O; SPI Operating frequency: 120MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V кількість в упаковці: 3000 шт | товар відсутній | |||||||||||||||||
GD25LQ128DBAGY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ128DS2GR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ128DSAGR | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 16M x 8 | товар відсутній | |||||||||||||||||
GD25LQ128DSAGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ128DSIG | GigaDevice | NOR Flash 128Mbit NOR Flash /1.8V /SOP8 208mil /Industrial(-40? to +85?) /Tube | товар відсутній | |||||||||||||||||
GD25LQ128DSIG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 | товар відсутній | |||||||||||||||||
GD25LQ128DSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Verified | на замовлення 11197 шт: термін постачання 21-31 дні (днів) |
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GD25LQ128DSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Verified | на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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GD25LQ128DSIGR | GigaDevice | NOR Flash 128Mbit NOR Flash /1.8V /SOP8 208mil /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25LQ128DVIGR | GigaDevice | NOR Flash 128Mbit NOR Flash /1.8V /VSOP8 208mil /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25LQ128DVIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8VSOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-VSOP Part Status: Active Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 | товар відсутній | |||||||||||||||||
GD25LQ128DW2GR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ128DWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Not For New Designs Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25LQ128DWIGR | GigaDevice | NOR Flash 128Mbit NOR Flash /1.8V /WSON8 6*5mm /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25LQ128DWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Not For New Designs Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Not Verified | на замовлення 749 шт: термін постачання 21-31 дні (днів) |
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GD25LQ128DY2GY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ128DYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Part Status: Active Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Not Verified | на замовлення 3045 шт: термін постачання 21-31 дні (днів) |
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GD25LQ128DYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Part Status: Active Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25LQ128DYIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ128EBIRY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ128EBIRY | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 128MBIT SPI/QUAD 24TFBGA Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 6 ns Memory Organization: 16M x 8 | товар відсутній | |||||||||||||||||
GD25LQ128EFIRR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ128EQEGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ128EQIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ128EQIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x4) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 6 ns Memory Organization: 16M x 8 | товар відсутній | |||||||||||||||||
GD25LQ128ESIG | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ128ESIGR | GigaDevice | NOR Flash | на замовлення 3599 шт: термін постачання 21-30 дні (днів) |
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GD25LQ128ESIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 DigiKey Programmable: Not Verified | на замовлення 4447 шт: термін постачання 21-31 дні (днів) |
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GD25LQ128ESIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 DigiKey Programmable: Not Verified | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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GD25LQ128ESJGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ128ESJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 6 ns Memory Organization: 16M x 8 | товар відсутній | |||||||||||||||||
GD25LQ128EWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 DigiKey Programmable: Not Verified | на замовлення 5807 шт: термін постачання 21-31 дні (днів) |
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GD25LQ128EWIGR | GigaDevice | NOR Flash | на замовлення 2625 шт: термін постачання 21-30 дні (днів) |
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GD25LQ128EWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25LQ128EWJGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ128EYIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ128EYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 6 ns Memory Organization: 16M x 8 | товар відсутній | |||||||||||||||||
GD25LQ128EYIGY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ128EYIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 6 ns Memory Organization: 16M x 8 | товар відсутній | |||||||||||||||||
GD25LQ128EYJGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ128YIG | QFN?? | на замовлення 1 шт: термін постачання 14-28 дні (днів) | ||||||||||||||||||
GD25LQ128YTG | GD | QFN? | на замовлення 25 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||
GD25LQ16C8IGR | GigaDevice | NOR Flash 16Mbit NOR Flash /1.8V /LGA8 3*2 /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25LQ16C8IGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | товар відсутній | |||||||||||||||||
GD25LQ16C8JGR | GigaDevice | NOR Flash 16Mbit NOR Flash /1.8V /LGA8 3*2 /Industrial(-40? to +105?) /T&R | товар відсутній | |||||||||||||||||
GD25LQ16CNIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8USON Packaging: Cut Tape (CT) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x3) Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | на замовлення 3830 шт: термін постачання 21-31 дні (днів) |
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GD25LQ16CNIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x3) Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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GD25LQ16CNIGR | GigaDevice | NOR Flash 16Mbit NOR Flash /1.8V /USON8 3*4mm /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25LQ16CSIG | GigaDevice | NOR Flash 16Mbit NOR Flash /1.8V /SOP8 208mil /Industrial(-40? to +85?) /Tube | товар відсутній | |||||||||||||||||
GD25LQ16CSIG | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | товар відсутній | |||||||||||||||||
GD25LQ16CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Verified | на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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GD25LQ16CSIGR | GigaDevice | NOR Flash 16Mbit NOR Flash /1.8V /SOP8 208mil /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25LQ16CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Verified | на замовлення 18066 шт: термін постачання 21-31 дні (днів) |
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GD25LQ16CTIG | GigaDevice | NOR Flash 16Mbit NOR Flash /1.8V /SOP8 150mil /Industrial(-40? to +85?) /Tube | товар відсутній | |||||||||||||||||
GD25LQ16CTIG | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | товар відсутній | |||||||||||||||||
GD25LQ16CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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GD25LQ16CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | на замовлення 11091 шт: термін постачання 21-31 дні (днів) |
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GD25LQ16CTIGR | GigaDevice | NOR Flash 16Mbit NOR Flash /1.8V /SOP8 150mil /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25LQ16CWIGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | товар відсутній | |||||||||||||||||
GD25LQ16CWIGR | GigaDevice | NOR Flash 16Mbit NOR Flash /1.8V /WSON8 6*5mm /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25LQ16EEIGR | GigaDevice | NOR Flash | на замовлення 4474 шт: термін постачання 21-30 дні (днів) |
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GD25LQ16ENIGR | GigaDevice | NOR Flash | на замовлення 395 шт: термін постачання 21-30 дні (днів) |
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GD25LQ16ENIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x4) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 2M x 8 | товар відсутній | |||||||||||||||||
GD25LQ16ESIGR | GigaDevice Semiconductor (HK) Limited | Description: 16MBIT, 1.8V, SOP8 208MIL, INDUS Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 2M x 8 | на замовлення 1957 шт: термін постачання 21-31 дні (днів) |
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GD25LQ16ESIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ16ESIGR | GigaDevice Semiconductor (HK) Limited | Description: 16MBIT, 1.8V, SOP8 208MIL, INDUS Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 2M x 8 | товар відсутній | |||||||||||||||||
GD25LQ16ETIGR | GigaDevice Semiconductor (HK) Limited | Description: 16MBIT, 1.8V, SOP8 150MIL, INDUS Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 2M x 8 | на замовлення 2341 шт: термін постачання 21-31 дні (днів) |
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GD25LQ16ETIGR | GigaDevice Semiconductor (HK) Limited | Description: 16MBIT, 1.8V, SOP8 150MIL, INDUS Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 2M x 8 | товар відсутній | |||||||||||||||||
GD25LQ16ETIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ16ETJGR | GigaDevice | NOR Flash 16Mbiit Dual and Quad Serial Flash - Extended Temp | товар відсутній | |||||||||||||||||
GD25LQ16EWIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ16EWIGY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ16LIGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | товар відсутній | |||||||||||||||||
GD25LQ16SIG | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16MbFLASH; Quad I/O,SPI; 120MHz; 1.65÷2V; SOP8 Interface: Quad I/O; SPI Mounting: SMD Operating frequency: 120MHz Kind of interface: serial Memory: 16Mb FLASH Operating temperature: -40...85°C Case: SOP8 Operating voltage: 1.65...2V Type of integrated circuit: FLASH memory Kind of memory: NOR Flash | на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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GD25LQ16SIG | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16MbFLASH; Quad I/O,SPI; 120MHz; 1.65÷2V; SOP8 Interface: Quad I/O; SPI Mounting: SMD Operating frequency: 120MHz Kind of interface: serial Memory: 16Mb FLASH Operating temperature: -40...85°C Case: SOP8 Operating voltage: 1.65...2V Type of integrated circuit: FLASH memory Kind of memory: NOR Flash кількість в упаковці: 1 шт | на замовлення 25 шт: термін постачання 14-21 дні (днів) |
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GD25LQ16TIG | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16MbFLASH; Quad I/O,SPI; 120MHz; 1.65÷2V; SOP8 Mounting: SMD Operating frequency: 120MHz Interface: Quad I/O; SPI Operating temperature: -40...85°C Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Kind of interface: serial Memory: 16Mb FLASH Case: SOP8 Operating voltage: 1.65...2V кількість в упаковці: 1 шт | на замовлення 332 шт: термін постачання 14-21 дні (днів) |
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GD25LQ16TIG | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16MbFLASH; Quad I/O,SPI; 120MHz; 1.65÷2V; SOP8 Mounting: SMD Operating frequency: 120MHz Interface: Quad I/O; SPI Operating temperature: -40...85°C Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Kind of interface: serial Memory: 16Mb FLASH Case: SOP8 Operating voltage: 1.65...2V | на замовлення 332 шт: термін постачання 21-30 дні (днів) |
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GD25LQ20CEIGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | на замовлення 5822 шт: термін постачання 21-31 дні (днів) | |||||||||||||||||
GD25LQ20CEIGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | на замовлення 3000 шт: термін постачання 21-31 дні (днів) | |||||||||||||||||
GD25LQ20CTIGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | на замовлення 5920 шт: термін постачання 21-31 дні (днів) | |||||||||||||||||
GD25LQ20CTIGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | на замовлення 3000 шт: термін постачання 21-31 дні (днів) | |||||||||||||||||
GD25LQ255EBIRY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ255ESIGR | GigaDevice Semiconductor (HK) Limited | Description: 256MBIT, 1.8V, SOP8 208MIL, INDU Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25LQ255EWIGR | GigaDevice Semiconductor (HK) Limited | Description: 256MB, 1.8V, SPI NOR, WSON8 Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 32M x 8 | на замовлення 1530 шт: термін постачання 21-31 дні (днів) |
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GD25LQ255EWIGR | GigaDevice Semiconductor (HK) Limited | Description: 256MB, 1.8V, SPI NOR, WSON8 Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25LQ255EYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Memory Interface: SPI - Quad I/O, QPI Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25LQ255EYIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ255EYIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Memory Interface: SPI - Quad I/O, QPI Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25LQ255EYIGY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ256CWIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; Quad I/O,SPI; 120MHz; 1.65÷2V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 256Mb FLASH Interface: Quad I/O; SPI Operating frequency: 120MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V | товар відсутній | |||||||||||||||||
GD25LQ256CWIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; Quad I/O,SPI; 120MHz; 1.65÷2V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 256Mb FLASH Interface: Quad I/O; SPI Operating frequency: 120MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V кількість в упаковці: 3000 шт | товар відсутній | |||||||||||||||||
GD25LQ256DWIGR | GigaDevice | NOR Flash 256Mbit NOR Flash /1.8V /WSON8 6*5mm /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25LQ256DWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 DigiKey Programmable: Not Verified | на замовлення 7001 шт: термін постачання 21-31 дні (днів) |
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GD25LQ256DWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25LQ256DWIGY | GigaDevice | NOR Flash 256Mbit NOR Flash /1.8V /WSON8 6*5mm /Industrial(-40? to +85?) /Tray | товар відсутній | |||||||||||||||||
GD25LQ256DYIGR | GigaDevice | NOR Flash 256Mbit NOR Flash /1.8V /WSON8 8*6mm /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25LQ32CSIG | GigaDevice | NOR Flash 32Mb SPI NOR 1.65V-1.95V SOP8 | товар відсутній | |||||||||||||||||
GD25LQ32CSIGR | GigaDevice | NOR Flash NOR FLASH 32M 1.8V, SOP8 208mi | товар відсутній | |||||||||||||||||
GD25LQ32CSIGRR | GigaDevice | NOR Flash NOR FLASH 32M 1.8V, SOP8 208mi | товар відсутній | |||||||||||||||||
GD25LQ32CSIGRY | GigaDevice | NOR Flash NOR FLASH 32M 1.8V, SOP8 208mi | товар відсутній | |||||||||||||||||
GD25LQ32DLIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 10WLCSP | на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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GD25LQ32DLIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ32DLIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 10WLCSP | на замовлення 5721 шт: термін постачання 21-31 дні (днів) |
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GD25LQ32DNIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x3) Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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GD25LQ32DNIGR | GigaDevice | NOR Flash 32Mbit NOR Flash /1.8V /USON8 3*4mm /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25LQ32DNIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8USON Packaging: Cut Tape (CT) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x3) Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | на замовлення 10043 шт: термін постачання 21-31 дні (днів) |
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GD25LQ32DQIGR | GigaDevice | NOR Flash 32Mbit NOR Flash /1.8V /USON8 4*4mm /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25LQ32DSIG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP | товар відсутній | |||||||||||||||||
GD25LQ32DSIG | GigaDevice | NOR Flash 32Mbit NOR Flash /1.8V /SOP8 208mil /Industrial(-40? to +85?) /Tube | товар відсутній | |||||||||||||||||
GD25LQ32DSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Verified | на замовлення 42000 шт: термін постачання 21-31 дні (днів) |
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GD25LQ32DSIGR | GigaDevice | NOR Flash 32Mbit NOR Flash /1.8V /SOP8 208mil /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25LQ32DSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Verified | на замовлення 44938 шт: термін постачання 21-31 дні (днів) |
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GD25LQ32DWIGR | GigaDevice | NOR Flash 32Mbit NOR Flash /1.8V /WSON8 6*5mm /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25LQ32DWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8WSON | товар відсутній | |||||||||||||||||
GD25LQ32DWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8WSON | товар відсутній | |||||||||||||||||
GD25LQ32EEIG | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ32EEIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ32ENIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8USON Packaging: Cut Tape (CT) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x3) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25LQ32ENIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x3) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25LQ32ENIGR | GigaDevice | NOR Flash | на замовлення 3052 шт: термін постачання 21-30 дні (днів) |
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GD25LQ32EQIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ32ES2GR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ32ES2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 4M x 8 | товар відсутній | |||||||||||||||||
GD25LQ32ESIG | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ32ESIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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GD25LQ32ESIGR | GigaDevice | NOR Flash | на замовлення 3105 шт: термін постачання 21-30 дні (днів) |
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GD25LQ32ESIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | на замовлення 13417 шт: термін постачання 21-31 дні (днів) |
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GD25LQ32ESIGY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ32ETIGR | GigaDevice Semiconductor (HK) Limited | Description: 32MBIT, 1.8V, SOP8 150MIL, INDUS Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 4M x 8 | на замовлення 2840 шт: термін постачання 21-31 дні (днів) |
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GD25LQ32ETIGR | GigaDevice Semiconductor (HK) Limited | Description: 32MBIT, 1.8V, SOP8 150MIL, INDUS Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 4M x 8 | товар відсутній | |||||||||||||||||
GD25LQ32ETIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ32ETIGY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ32EWIGR | GigaDevice Semiconductor (HK) Limited | Description: 32MBIT, 1.8V, WSON8 6*5MM, INDUS Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 4M x 8 | на замовлення 5960 шт: термін постачання 21-31 дні (днів) |
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GD25LQ32EWIGR | GigaDevice Semiconductor (HK) Limited | Description: 32MBIT, 1.8V, WSON8 6*5MM, INDUS Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 4M x 8 | на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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GD25LQ32EWIGR | GigaDevice | NOR Flash | на замовлення 2997 шт: термін постачання 21-30 дні (днів) |
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GD25LQ32EWIGY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ40CEIGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | на замовлення 5598 шт: термін постачання 21-31 дні (днів) | |||||||||||||||||
GD25LQ40CEIGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | на замовлення 3000 шт: термін постачання 21-31 дні (днів) | |||||||||||||||||
GD25LQ40CEIGR | GigaDevice | NOR Flash 4Mbit NOR Flash /1.8v /USON8 3*2*0.45mm /Industrial(-40? to +85?) /T&R | на замовлення 1708 шт: термін постачання 21-30 дні (днів) |
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GD25LQ40CQIGR | GigaDevice | NOR Flash 4Mbit NOR Flash /1.8v /USON8 4*4*0.45mm /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25LQ40CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD I/O 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 512K x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25LQ40CTIGR | GigaDevice | NOR Flash 4Mbit NOR Flash /1.8v /SOP8 150mil /Industrial(-40? to +85?) /T&R | на замовлення 2818 шт: термін постачання 21-30 дні (днів) |
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GD25LQ40CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD I/O 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 512K x 8 DigiKey Programmable: Not Verified | на замовлення 1904 шт: термін постачання 21-31 дні (днів) |
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GD25LQ40ESIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ64BWIG | GD | QFN | на замовлення 10 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||
GD25LQ64CQIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x4) Part Status: Active Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25LQ64CQIGR | GigaDevice | NOR Flash 64Mbit NOR Flash /1.8V /USON8 4*4mm /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25LQ64CSIG Код товару: 127223 | Мікросхеми > Пам'ять | товар відсутній | ||||||||||||||||||
GD25LQ64CSIG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8SOP Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Verified | товар відсутній | |||||||||||||||||
GD25LQ64CSIG | GigaDevice | NOR Flash 64Mbit NOR Flash /1.8V /SOP8 208mil /Industrial(-40? to +85?) /Tube | товар відсутній | |||||||||||||||||
GD25LQ64CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Verified | товар відсутній | |||||||||||||||||
GD25LQ64CSIGR | GigaDevice | NOR Flash 64Mbit NOR Flash /1.8V /SOP8 208mil /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25LQ64CSIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; Quad I/O,SPI; 133MHz; 1.65÷2V; SOP8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 64Mb FLASH Interface: Quad I/O; SPI Operating frequency: 133MHz Case: SOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V кількість в упаковці: 9500 шт | товар відсутній | |||||||||||||||||
GD25LQ64CSIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; Quad I/O,SPI; 133MHz; 1.65÷2V; SOP8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 64Mb FLASH Interface: Quad I/O; SPI Operating frequency: 133MHz Case: SOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V | товар відсутній | |||||||||||||||||
GD25LQ64CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Verified | на замовлення 421 шт: термін постачання 21-31 дні (днів) |
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GD25LQ64CVIGR | GigaDevice | NOR Flash 64Mbit NOR Flash /1.8V /VSOP8 208mil /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25LQ64CVIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; Quad I/O,SPI; 133MHz; 1.65÷2V; VSOP8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 64Mb FLASH Interface: Quad I/O; SPI Operating frequency: 133MHz Case: VSOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V кількість в упаковці: 3000 шт | товар відсутній | |||||||||||||||||
GD25LQ64CVIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; Quad I/O,SPI; 133MHz; 1.65÷2V; VSOP8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 64Mb FLASH Interface: Quad I/O; SPI Operating frequency: 133MHz Case: VSOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V | товар відсутній | |||||||||||||||||
GD25LQ64CVIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8VSOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-VSOP Part Status: Active Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Verified | товар відсутній | |||||||||||||||||
GD25LQ64CWIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; Quad I/O,SPI; 133MHz; 1.65÷2V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 64Mb FLASH Interface: Quad I/O; SPI Operating frequency: 133MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V | товар відсутній | |||||||||||||||||
GD25LQ64CWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Not For New Designs Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Not Verified | на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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GD25LQ64CWIGR | GigaDevice | NOR Flash 64Mbit NOR Flash /1.8V /WSON8 6*5mm /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25LQ64CWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Not For New Designs Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Not Verified | на замовлення 6140 шт: термін постачання 21-31 дні (днів) |
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GD25LQ64CWIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; Quad I/O,SPI; 133MHz; 1.65÷2V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 64Mb FLASH Interface: Quad I/O; SPI Operating frequency: 133MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V кількість в упаковці: 3000 шт | товар відсутній | |||||||||||||||||
GD25LQ64EBAGY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ64ENAGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x4) Write Cycle Time - Word, Page: 100µs, 4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 | товар відсутній | |||||||||||||||||
GD25LQ64ENAGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ64ENIGR | GigaDevice | NOR Flash | на замовлення 1267 шт: термін постачання 21-30 дні (днів) |
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GD25LQ64ENIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x4) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 | товар відсутній | |||||||||||||||||
GD25LQ64ENJGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ64ENJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x4) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 | товар відсутній | |||||||||||||||||
GD25LQ64EQAGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x4) Write Cycle Time - Word, Page: 100µs, 4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 | товар відсутній | |||||||||||||||||
GD25LQ64EQAGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ64EQEGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ64EQEGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x4) Write Cycle Time - Word, Page: 100µs, 4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 | товар відсутній | |||||||||||||||||
GD25LQ64EQIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x4) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 | товар відсутній | |||||||||||||||||
GD25LQ64EQIGR | GigaDevice | NOR Flash | на замовлення 2939 шт: термін постачання 21-30 дні (днів) |
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GD25LQ64ES2GR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ64ES2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 | товар відсутній | |||||||||||||||||
GD25LQ64ESAGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 100µs, 4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 | товар відсутній | |||||||||||||||||
GD25LQ64ESAGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ64ESIG | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ64ESIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 DigiKey Programmable: Not Verified | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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GD25LQ64ESIGR | GigaDevice | NOR Flash | на замовлення 3970 шт: термін постачання 21-30 дні (днів) |
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GD25LQ64ESIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 DigiKey Programmable: Not Verified | на замовлення 3975 шт: термін постачання 21-31 дні (днів) |
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GD25LQ64ET2GR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ64ET2GY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8SOP Packaging: Tray Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 | товар відсутній | |||||||||||||||||
GD25LQ64ET2GY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ64ETIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 | товар відсутній | |||||||||||||||||
GD25LQ64ETIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ64EW2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 | товар відсутній | |||||||||||||||||
GD25LQ64EW2GR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ64EWAGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 100µs, 4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 | товар відсутній | |||||||||||||||||
GD25LQ64EWAGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ64EWIGR | GigaDevice Semiconductor (HK) Limited | Description: 64MBIT, 1.8V, WSON8 6*5MM, INDUS Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 6 ns Memory Organization: 8M x 8 | на замовлення 2908 шт: термін постачання 21-31 дні (днів) |
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GD25LQ64EWIGR | GigaDevice Semiconductor (HK) Limited | Description: 64MBIT, 1.8V, WSON8 6*5MM, INDUS Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 6 ns Memory Organization: 8M x 8 | товар відсутній | |||||||||||||||||
GD25LQ64EWIGR | GigaDevice | NOR Flash | на замовлення 2963 шт: термін постачання 21-30 дні (днів) |
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GD25LQ64EY2GR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ64EY2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 | товар відсутній | |||||||||||||||||
GD25LQ80BSIGR | GigaDevice | NOR Flash NOR FLASH 8M 1.8v, SOP8 208mil | товар відсутній | |||||||||||||||||
GD25LQ80CEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/QUAD 8USON Packaging: Cut Tape (CT) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 1M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25LQ80CEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 1M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25LQ80CEIGR | GigaDevice | NOR Flash 8Mbit NOR Flash /1.8v /USON8 3*2mm 0.55mm /Industrial(-40? to +85?) /T&R | на замовлення 415 шт: термін постачання 21-30 дні (днів) |
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GD25LQ80CN2GR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ80CN2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR (SLC) Clock Frequency: 90 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x4) Write Cycle Time - Word, Page: 80µs, 3ms Memory Interface: SPI - Quad I/O Access Time: 6 ns Memory Organization: 1M x 8 | товар відсутній | |||||||||||||||||
GD25LQ80CSIG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/QUAD I/O 8SOP Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 1M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25LQ80CSIG | GigaDevice | NOR Flash 8Mbit NOR Flash /1.8v /SOP8 208mil /Industrial(-40? to +85?) /Tube | товар відсутній | |||||||||||||||||
GD25LQ80CSIGR | GigaDevice | NOR Flash 8Mbit NOR Flash /1.8v /SOP8 208mil /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25LQ80CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/QUAD I/O 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 1M x 8 DigiKey Programmable: Verified | товар відсутній | |||||||||||||||||
GD25LQ80CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/QUAD I/O 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 1M x 8 DigiKey Programmable: Verified | товар відсутній | |||||||||||||||||
GD25LQ80CTIG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/QUAD I/O 8SOP Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 1M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25LQ80CTIG | GigaDevice | NOR Flash 8Mbit NOR Flash /1.8v /SOP8 150mil /Industrial(-40? to +85?) /Tube | товар відсутній | |||||||||||||||||
GD25LQ80CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/QUAD I/O 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 1M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25LQ80CTIGR | GigaDevice | NOR Flash 8Mbit NOR Flash /1.8v /SOP8 150mil /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25LQ80CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/QUAD I/O 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 1M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25LQ80EEAGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ80EEAGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x2) Write Cycle Time - Word, Page: 100µs, 4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 1M x 8 | товар відсутній | |||||||||||||||||
GD25LQ80EEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x2) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 1M x 8 | товар відсутній | |||||||||||||||||
GD25LQ80EEIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ80ESIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ80ESIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 1M x 8 | товар відсутній | |||||||||||||||||
GD25LQ80ETEGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 100µs, 4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 1M x 8 | товар відсутній | |||||||||||||||||
GD25LQ80ETEGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LQ80ETIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 1M x 8 | товар відсутній | |||||||||||||||||
GD25LQ80ETIGR | GigaDevice | NOR Flash | на замовлення 1525 шт: термін постачання 21-30 дні (днів) |
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GD25LR512MEFIRY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LR512MEFIRY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 512MBIT SPI/QUAD 16SOP Packaging: Tray Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 | товар відсутній | |||||||||||||||||
GD25LR512MEYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 512MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 | товар відсутній | |||||||||||||||||
GD25LR512MEYIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LT256EBIRY | GigaDevice | NOR Flash 200Mhz /256Mbit NOR Flash / 1.8V /TFBGA 6*8mm /Industrial(-40? to +85?) /Tray | товар відсутній | |||||||||||||||||
GD25LT256EBIRY | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | на замовлення 256 шт: термін постачання 21-31 дні (днів) | |||||||||||||||||
GD25LT256EYAGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25LX256EBIRY | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 256MBIT SPI/OCTL 24TFBGA | товар відсутній | |||||||||||||||||
GD25LX256EFIRR | GigaDevice Semiconductor (HK) Limited | Description: 256MBIT, 1.8V, SOP16 300MIL, IND Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 1.2ms Memory Interface: SPI - Octal I/O, DTR Access Time: 6 ns Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25LX256EFIRR | GigaDevice Semiconductor (HK) Limited | Description: 256MBIT, 1.8V, SOP16 300MIL, IND Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 1.2ms Memory Interface: SPI - Octal I/O, DTR Access Time: 6 ns Memory Organization: 32M x 8 | на замовлення 951 шт: термін постачання 21-31 дні (днів) |
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GD25MPS17H | GeneSiC Semiconductor | 1700V 25A TO-247-2 SiC Schottky MPS | товар відсутній | |||||||||||||||||
GD25MPS17H | GeneSiC Semiconductor | Silicon Carbide Schottky Diode | товар відсутній | |||||||||||||||||
GD25MPS17H | GeneSiC Semiconductor | Description: DIODE SIL CARB 1.7KV 56A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1083pF @ 1V, 1MHz Current - Average Rectified (Io): 56A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A Current - Reverse Leakage @ Vr: 20 µA @ 1700 V | на замовлення 1440 шт: термін постачання 21-31 дні (днів) |
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GD25MPS17H | GeneSiC Semiconductor | Schottky Diodes & Rectifiers 1700V 25A TO-247-2 SiC Schottky MPS | на замовлення 862 шт: термін постачання 21-30 дні (днів) |
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GD25MPS17H | GENESIC SEMICONDUCTOR | Description: GENESIC SEMICONDUCTOR - GD25MPS17H - SiC-Schottky-Diode, MPS Series, Einfach, 1.7 kV, 56 A, 206 nC, TO-247 tariffCode: 85411000 Bauform - Diode: TO-247 Kapazitive Gesamtladung: 206nC rohsCompliant: YES Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 56A euEccn: NLR Wiederkehrende Spitzensperrspannung: 1.7kV Anzahl der Pins: 2 Pins Produktpalette: MPS Series productTraceability: No Betriebstemperatur, max.: 175°C SVHC: No SVHC (17-Jan-2023) | на замовлення 298 шт: термін постачання 21-31 дні (днів) |
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GD25MPS17H | GeneSiC Semiconductor | Silicon Carbide Schottky Diode | товар відсутній | |||||||||||||||||
GD25PJY120F2S | STARPOWER | Description: STARPOWER - GD25PJY120F2S - IGBT-Modul, PIM-Dreiphasen-Eingangsgleichrichter, 49 A, 1.7 V, 188 W, 150 °C, Module tariffCode: 85412900 productTraceability: No Kollektor-Emitter-Spannung, max.: 1.2kV rohsCompliant: YES Verlustleistung: 188W euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.7V Betriebstemperatur, max.: 150°C usEccn: EAR99 Dauer-Kollektorstrom: 49A Produktpalette: - SVHC: No SVHC (23-Jan-2024) | на замовлення 25 шт: термін постачання 21-31 дні (днів) |
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GD25PJY120F2S | STARPOWER SEMICONDUCTOR | GD25PJY120F2S IGBT modules | товар відсутній | |||||||||||||||||
GD25PJY120F2S | STARPOWER SEMICONDUCTOR LTD. | Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0 Case: F2.0 Collector current: 25A Gate-emitter voltage: ±20V Pulsed collector current: 50A Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Technology: Advanced Trench FS IGBT Type of module: IGBT Max. off-state voltage: 1200V | товар відсутній | |||||||||||||||||
GD25PJY120F5S | STARPOWER SEMICONDUCTOR | GD25PJY120F5S IGBT modules | товар відсутній | |||||||||||||||||
GD25PJY120F5S | STARPOWER SEMICONDUCTOR LTD. | Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F5.1 Case: F5.1 Collector current: 25A Gate-emitter voltage: ±20V Pulsed collector current: 50A Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Technology: Advanced Trench FS IGBT Type of module: IGBT Max. off-state voltage: 1200V | товар відсутній | |||||||||||||||||
GD25PJY120F5S | STARPOWER | Description: STARPOWER - GD25PJY120F5S - IGBT-Modul, PIM-Dreiphasen-Eingangsgleichrichter, 49 A, 1.7 V, 188 W, 150 °C, Module tariffCode: 85412900 productTraceability: No Kollektor-Emitter-Spannung, max.: 1.2kV rohsCompliant: YES Verlustleistung: 188W euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.7V Betriebstemperatur, max.: 150°C usEccn: EAR99 Dauer-Kollektorstrom: 49A Produktpalette: - SVHC: No SVHC (23-Jan-2024) | на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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GD25PJY120L3S Код товару: 194449 | Транзистори > IGBT | товар відсутній | ||||||||||||||||||
GD25PJY120L3S | STARPOWER | Description: STARPOWER - GD25PJY120L3S - IGBT-Modul, PIM-Dreiphasen-Eingangsgleichrichter, 50 A, 1.7 V, 252 W, 150 °C, Module tariffCode: 85412900 productTraceability: No Kollektor-Emitter-Spannung, max.: 1.2kV rohsCompliant: YES Verlustleistung: 252W euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.7V Betriebstemperatur, max.: 150°C usEccn: EAR99 Dauer-Kollektorstrom: 50A Produktpalette: - SVHC: No SVHC (23-Jan-2024) | на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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GD25PJY120L3S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0 Electrical mounting: Press-in PCB Mechanical mounting: screw Case: L3.0 Type of module: IGBT Technology: Advanced Trench FS IGBT Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 25A Pulsed collector current: 50A кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||||
GD25PJY120L3S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0 Electrical mounting: Press-in PCB Mechanical mounting: screw Case: L3.0 Type of module: IGBT Technology: Advanced Trench FS IGBT Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 25A Pulsed collector current: 50A | товар відсутній | |||||||||||||||||
GD25Q127CBIGY | GigaDevice | NOR Flash 128Mbit NOR Flash /3.3V /TFBGA24(5*5 ball array) /Industrial(-40? to +85?) /Tray | товар відсутній | |||||||||||||||||
GD25Q127CBIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 128MBIT SPI/QUAD 24TFBGA | товар відсутній | |||||||||||||||||
GD25Q127CFIG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 16SOP | товар відсутній | |||||||||||||||||
GD25Q127CFIG | GigaDevice | NOR Flash 128Mbit NOR Flash /3.3V /SOP16 300mil /Industrial(-40? to +85?) /Tube | товар відсутній | |||||||||||||||||
GD25Q127CFIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 16SOP Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 12µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Verified | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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GD25Q127CFIGR | GigaDevice | NOR Flash 128Mbit NOR Flash /3.3V /SOP16 300mil /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25Q127CFIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 16SOP Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 12µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Verified | на замовлення 5011 шт: термін постачання 21-31 дні (днів) |
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GD25Q127CSIG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 12µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Verified | товар відсутній | |||||||||||||||||
GD25Q127CSIG | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 128MbFLASH; Quad I/O,SPI; 104MHz; 2.7÷3.6V; SOP8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: Quad I/O; SPI Operating frequency: 104MHz Case: SOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V кількість в упаковці: 4750 шт | товар відсутній | |||||||||||||||||
GD25Q127CSIG | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 128MbFLASH; Quad I/O,SPI; 104MHz; 2.7÷3.6V; SOP8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: Quad I/O; SPI Operating frequency: 104MHz Case: SOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V | товар відсутній | |||||||||||||||||
GD25Q127CSIG | GigaDevice Semiconductor | NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 128M-bit 16M x 8 6.5ns 8-Pin SOP Tube | товар відсутній | |||||||||||||||||
GD25Q127CSIG | GigaDevice | NOR Flash 128Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /Tube | товар відсутній | |||||||||||||||||
GD25Q127CSIGR | GigaDevice | NOR Flash 128Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25Q127CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 12µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Verified | на замовлення 13909 шт: термін постачання 21-31 дні (днів) |
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GD25Q127CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 12µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Verified | на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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GD25Q127CSIGY | GigaDevice | NOR Flash 128Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /Tray | товар відсутній | |||||||||||||||||
GD25Q127CSJG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP | товар відсутній | |||||||||||||||||
GD25Q127CSJG | GigaDevice | NOR Flash 128Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +105?) /Tube | товар відсутній | |||||||||||||||||
GD25Q127CSJGR | GigaDevice | NOR Flash 128Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +105?) /T&R | товар відсутній | |||||||||||||||||
GD25Q127CSJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP | товар відсутній | |||||||||||||||||
GD25Q127CWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Not For New Designs Write Cycle Time - Word, Page: 12µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Not Verified | на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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GD25Q127CWIGR | GigaDevice | NOR Flash 128Mbit NOR Flash /3.3V /WSON8 6*5mm /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25Q127CWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Not For New Designs Write Cycle Time - Word, Page: 12µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Not Verified | на замовлення 3962 шт: термін постачання 21-31 дні (днів) |
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GD25Q127CYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Part Status: Not For New Designs Write Cycle Time - Word, Page: 12µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Not Verified | на замовлення 8033 шт: термін постачання 21-31 дні (днів) |
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GD25Q127CYIGR | GigaDevice Semiconductor | IC NOR Flash Memory SPI 128M MLP8 8x6mm | товар відсутній | |||||||||||||||||
GD25Q127CYIGR | GigaDevice | NOR Flash 128Mbit NOR Flash /3.3V /WSON8 8*6mm /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25Q127CYIGR | Gigadevice Semiconductor | IC NOR Flash Memory SPI 128M MLP8 8x6mm | товар відсутній | |||||||||||||||||
GD25Q127CYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Part Status: Not For New Designs Write Cycle Time - Word, Page: 12µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Not Verified | на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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GD25Q127CYIGR | GIGADEVICE | Pami??: NOR Flash | 128Mbit | Quad I/O,SPI | 104MHz | 2,7?3,6V | WSON8 GD25Q127CYIGR GigaDevice Semiconductor (HK) Limited PEF25q127cyigr кількість в упаковці: 10 шт | на замовлення 10 шт: термін постачання 28-31 дні (днів) |
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GD25Q127CZIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 128MBIT SPI/QUAD 24TFBGA | товар відсутній | |||||||||||||||||
GD25Q127CZIGY | GigaDevice | NOR Flash 128Mbit NOR Flash /3.3V /TFBGA24(6*4 ball array) /Industrial(-40? to +85?) /Tray | товар відсутній | |||||||||||||||||
GD25Q128CSIG | GigaDevice | NOR Flash 128Mb SPI NOR 2.7V-3.6V SOP8 2 | товар відсутній | |||||||||||||||||
GD25Q128CSIGR | GigaDevice | NOR Flash NOR FLASH 128M 3.3V, SOP8 208m | товар відсутній | |||||||||||||||||
GD25Q128EBIRY | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 128MBIT SPI/QUAD 24TFBGA Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | товар відсутній | |||||||||||||||||
GD25Q128EBIRY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q128EBJRY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q128EBJRY | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 128MBIT SPI/QUAD 24TFBGA Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 Write Cycle Time - Word, Page: 140µs, 4ms | товар відсутній | |||||||||||||||||
GD25Q128EFIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q128EFIRR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 16SOP Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | товар відсутній | |||||||||||||||||
GD25Q128EFIRR | GigaDevice | NOR Flash | на замовлення 994 шт: термін постачання 21-30 дні (днів) |
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GD25Q128EQEGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x4) Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 Write Cycle Time - Word, Page: 140µs, 4ms | товар відсутній | |||||||||||||||||
GD25Q128EQEGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q128EQIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8USON Packaging: Cut Tape (CT) Package / Case: 8-XDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x4) Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | на замовлення 574 шт: термін постачання 21-31 дні (днів) |
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GD25Q128EQIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x4) Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | товар відсутній | |||||||||||||||||
GD25Q128EQIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q128ESEGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q128ESEGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 Write Cycle Time - Word, Page: 140µs, 4ms | товар відсутній | |||||||||||||||||
GD25Q128ESIG | GigaDevice | NOR Flash | на замовлення 7510 шт: термін постачання 21-30 дні (днів) |
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GD25Q128ESIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 DigiKey Programmable: Not Verified | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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GD25Q128ESIGR | GigaDevice | NOR Flash | на замовлення 4634 шт: термін постачання 21-30 дні (днів) |
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GD25Q128ESIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 DigiKey Programmable: Not Verified | на замовлення 6215 шт: термін постачання 21-31 дні (днів) |
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GD25Q128ESJGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q128ESJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 Write Cycle Time - Word, Page: 140µs, 4ms | товар відсутній | |||||||||||||||||
GD25Q128EWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 DigiKey Programmable: Not Verified | на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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GD25Q128EWIGR | GigaDevice | NOR Flash | на замовлення 5387 шт: термін постачання 21-30 дні (днів) |
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GD25Q128EWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 DigiKey Programmable: Not Verified | на замовлення 10777 шт: термін постачання 21-31 дні (днів) |
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GD25Q128EWIGR | GigaDevice Semiconductor | GD25Q128EWIGR | товар відсутній | |||||||||||||||||
GD25Q128EWIGY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q128EWIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | товар відсутній | |||||||||||||||||
GD25Q128EWJGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q128EYIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 128MbFLASH; Quad I/O,SPI; 120MHz; 1.65÷2V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: Quad I/O; SPI Operating frequency: 120MHz Case: WSON8 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V | товар відсутній | |||||||||||||||||
GD25Q128EYIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q128EYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | на замовлення 2823 шт: термін постачання 21-31 дні (днів) |
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GD25Q128EYIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 128MbFLASH; Quad I/O,SPI; 120MHz; 1.65÷2V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: Quad I/O; SPI Operating frequency: 120MHz Case: WSON8 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V кількість в упаковці: 3000 шт | товар відсутній | |||||||||||||||||
GD25Q128EYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | товар відсутній | |||||||||||||||||
GD25Q128EYIGY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q128EYIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | товар відсутній | |||||||||||||||||
GD25Q128EYJGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q128EYJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 Write Cycle Time - Word, Page: 140µs, 4ms | товар відсутній | |||||||||||||||||
GD25Q16 | на замовлення 27500 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||
GD25Q16CEIGR | GigaDevice | NOR Flash 16Mbit NOR Flash /3.3V /WSON 3*2*0.45mm /Industrial(-40? to +85?) /T&R | на замовлення 1290 шт: термін постачання 91-100 дні (днів) |
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GD25Q16CEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25Q16CEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8USON Packaging: Cut Tape (CT) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | на замовлення 207 шт: термін постачання 21-31 дні (днів) |
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GD25Q16CNIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x3) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25Q16CNIGR | GigaDevice | NOR Flash 16Mbit NOR Flash /3.3V /USON8 3*4mm /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25Q16CQIGR | GigaDevice | NOR Flash 16Mbit NOR Flash /3.3V /USON8 4*4mm 0.45mm /Industrial(-40? to +105?) /T&R | товар відсутній | |||||||||||||||||
GD25Q16CSIG | GigaDevice | NOR Flash 16Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /Tube | товар відсутній | |||||||||||||||||
GD25Q16CSIG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Verified | товар відсутній | |||||||||||||||||
GD25Q16CSIG | GigaDevice Semiconductor | NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 16M-bit 7ns Tube | товар відсутній | |||||||||||||||||
GD25Q16CSIG | GIGADEVICE | Pami??: NOR Flash | 16Mbit | Quad I/O,SPI | 120MHz | 2,7?3,6V | SOP8 GD25Q16CSIG; GD25Q16CSIGR; GD25Q16CSIGTR; GD25Q16CSIGTR PEF25q16csig кількість в упаковці: 10 шт | на замовлення 20 шт: термін постачання 28-31 дні (днів) |
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GD25Q16CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Verified | на замовлення 7545 шт: термін постачання 21-31 дні (днів) |
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GD25Q16CSIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16MbFLASH; Quad I/O,SPI; 120MHz; 2.7÷3.6V; SOP8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: Quad I/O; SPI Operating frequency: 120MHz Case: SOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V кількість в упаковці: 1000 шт | товар відсутній | |||||||||||||||||
GD25Q16CSIGR | GigaDevice | NOR Flash 16Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25Q16CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Verified | на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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GD25Q16CSIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16MbFLASH; Quad I/O,SPI; 120MHz; 2.7÷3.6V; SOP8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: Quad I/O; SPI Operating frequency: 120MHz Case: SOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V | товар відсутній | |||||||||||||||||
GD25Q16CSJG | GigaDevice | NOR Flash 16Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +105?) /Tube | товар відсутній | |||||||||||||||||
GD25Q16CSJG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Verified | товар відсутній | |||||||||||||||||
GD25Q16CSJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Verified | товар відсутній | |||||||||||||||||
GD25Q16CSJGR | GigaDevice | NOR Flash 16Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +105?) /T&R | на замовлення 2062 шт: термін постачання 21-30 дні (днів) |
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GD25Q16CTEG | GigaDevice | NOR Flash 16Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +125?) /Tube | товар відсутній | |||||||||||||||||
GD25Q16CTEGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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GD25Q16CTEGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | на замовлення 11597 шт: термін постачання 21-31 дні (днів) |
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GD25Q16CTEGR | GigaDevice | NOR Flash 16Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +125?) /T&R | на замовлення 4275 шт: термін постачання 21-30 дні (днів) |
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GD25Q16CTIG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25Q16CTIG | GigaDevice | NOR Flash 16Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /Tube | товар відсутній | |||||||||||||||||
GD25Q16CTIG Код товару: 124467 | Мікросхеми > Пам'ять | товар відсутній | ||||||||||||||||||
GD25Q16CTIGR | GigaDevice | NOR Flash 16Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25Q16CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | на замовлення 127915 шт: термін постачання 21-31 дні (днів) |
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GD25Q16CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | на замовлення 126000 шт: термін постачання 21-31 дні (днів) |
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GD25Q16CTJG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP | товар відсутній | |||||||||||||||||
GD25Q16CTJG | GigaDevice | NOR Flash 16Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +105?) /Tube | товар відсутній | |||||||||||||||||
GD25Q16CTJGR | GigaDevice | NOR Flash 16Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +105?) /T&R | товар відсутній | |||||||||||||||||
GD25Q16CTJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP | товар відсутній | |||||||||||||||||
GD25Q16CWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8WSON | товар відсутній | |||||||||||||||||
GD25Q16CWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8WSON | товар відсутній | |||||||||||||||||
GD25Q16CWIGR | GigaDevice | NOR Flash 16Mbit NOR Flash /3.3V /WSON8 6*5mm /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25Q16EEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8USON Packaging: Cut Tape (CT) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | на замовлення 2658 шт: термін постачання 21-31 дні (днів) |
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GD25Q16EEIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16MbFLASH; Quad I/O,SPI; 133MHz; 2.7÷3.6V; USON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: Quad I/O; SPI Operating frequency: 133MHz Case: USON8 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V | товар відсутній | |||||||||||||||||
GD25Q16EEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25Q16EEIGR | GigaDevice | NOR Flash | на замовлення 15620 шт: термін постачання 21-30 дні (днів) |
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GD25Q16EEIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16MbFLASH; Quad I/O,SPI; 133MHz; 2.7÷3.6V; USON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: Quad I/O; SPI Operating frequency: 133MHz Case: USON8 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||||
GD25Q16EEJGR | GigaDevice | GigaDevice | товар відсутній | |||||||||||||||||
GD25Q16EEJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x2) Write Cycle Time - Word, Page: 140µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 2M x 8 | товар відсутній | |||||||||||||||||
GD25Q16ENEGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x4) Write Cycle Time - Word, Page: 140µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 2M x 8 | товар відсутній | |||||||||||||||||
GD25Q16ENEGR | GigaDevice | GigaDevice | товар відсутній | |||||||||||||||||
GD25Q16ENIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q16ENIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8USON Packaging: Cut Tape (CT) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x3) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25Q16ENIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x3) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25Q16EQIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q16EQIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x4) Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 2M x 8 | товар відсутній | |||||||||||||||||
GD25Q16ESIG | GigaDevice | NOR Flash | на замовлення 8011 шт: термін постачання 21-30 дні (днів) |
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GD25Q16ESIGR | GigaDevice | NOR Flash | на замовлення 4634 шт: термін постачання 21-30 дні (днів) |
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GD25Q16ESIGR | GigaDevice Semiconductor | GD25Q16ESIGR | товар відсутній | |||||||||||||||||
GD25Q16ESIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | на замовлення 1915 шт: термін постачання 21-31 дні (днів) |
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GD25Q16ESIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16MbFLASH; Quad I/O,SPI; 133MHz; 2.7÷3.6V; SO8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: Quad I/O; SPI Operating frequency: 133MHz Case: SO8 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V кількість в упаковці: 2000 шт | товар відсутній | |||||||||||||||||
GD25Q16ESIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25Q16ESIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16MbFLASH; Quad I/O,SPI; 133MHz; 2.7÷3.6V; SO8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: Quad I/O; SPI Operating frequency: 133MHz Case: SO8 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V | товар відсутній | |||||||||||||||||
GD25Q16ESJGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q16ESJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 2M x 8 Write Cycle Time - Word, Page: 140µs, 4ms | товар відсутній | |||||||||||||||||
GD25Q16ETEGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q16ETEGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 140µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 2M x 8 | товар відсутній | |||||||||||||||||
GD25Q16ETIG | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q16ETIGR | GigaDevice | NOR Flash | на замовлення 2471 шт: термін постачання 21-30 дні (днів) |
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GD25Q16ETIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | на замовлення 16658 шт: термін постачання 21-31 дні (днів) |
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GD25Q16ETIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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GD25Q16ETJGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q16ETJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 2M x 8 Write Cycle Time - Word, Page: 140µs, 4ms | товар відсутній | |||||||||||||||||
GD25Q16EWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25Q16EWIGR | GigaDevice | NOR Flash | на замовлення 1942 шт: термін постачання 21-30 дні (днів) |
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GD25Q16EWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25Q20CEAGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q20CEAGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x2) Write Cycle Time - Word, Page: 60µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 256K x 8 | товар відсутній | |||||||||||||||||
GD25Q20CEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2MBIT SPI/QUAD 8USON Packaging: Cut Tape (CT) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 256K x 8 DigiKey Programmable: Not Verified | на замовлення 8142 шт: термін постачання 21-31 дні (днів) |
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GD25Q20CEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 256K x 8 DigiKey Programmable: Not Verified | на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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GD25Q20CEIGR | GigaDevice | NOR Flash 2Mbit NOR Flash /3.3V /USON8 3*2*0.45mm /Industrial(-40? to +85?) /T&R | на замовлення 4128 шт: термін постачання 21-30 дні (днів) |
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GD25Q20COIGR | GigaDevice | NOR Flash 2Mbit NOR Flash /3.3V /TSSOP8 173mil /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25Q20COIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2MBIT SPI/QUAD 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-TSSOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 256K x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25Q20CSIG | GigaDevice | NOR Flash 2Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /Tube | товар відсутній | |||||||||||||||||
GD25Q20CSIG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2MBIT SPI/QUAD I/O 8SOP Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 256K x 8 DigiKey Programmable: Verified | товар відсутній | |||||||||||||||||
GD25Q20CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2MBIT SPI/QUAD I/O 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 256K x 8 DigiKey Programmable: Verified | товар відсутній | |||||||||||||||||
GD25Q20CSIGR | GigaDevice | NOR Flash 2Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25Q20CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2MBIT SPI/QUAD I/O 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 256K x 8 DigiKey Programmable: Verified | товар відсутній | |||||||||||||||||
GD25Q20CTIG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2MBIT SPI/QUAD I/O 8SOP Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 256K x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25Q20CTIG | GigaDevice | NOR Flash 2Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /Tube | товар відсутній | |||||||||||||||||
GD25Q20CTIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 2MbFLASH; Dual SPI,QUAD SPI,SPI; 120MHz; SOP8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 2Mb FLASH Interface: Dual SPI; QUAD SPI; SPI Operating frequency: 120MHz Case: SOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V кількість в упаковці: 1 шт | на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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GD25Q20CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2MBIT SPI/QUAD I/O 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 256K x 8 DigiKey Programmable: Not Verified | на замовлення 25615 шт: термін постачання 21-31 дні (днів) |
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GD25Q20CTIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 2MbFLASH; Dual SPI,QUAD SPI,SPI; 120MHz; SOP8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 2Mb FLASH Interface: Dual SPI; QUAD SPI; SPI Operating frequency: 120MHz Case: SOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V | на замовлення 1 шт: термін постачання 21-30 дні (днів) | |||||||||||||||||
GD25Q20CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2MBIT SPI/QUAD I/O 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 256K x 8 DigiKey Programmable: Not Verified | на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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GD25Q20CTIGR | GigaDevice | NOR Flash 2Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /T&R | на замовлення 4535 шт: термін постачання 21-30 дні (днів) |
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GD25Q20EEAGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q20EEAGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x2) Write Cycle Time - Word, Page: 140µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 256K x 8 | товар відсутній | |||||||||||||||||
GD25Q20EEIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q20EEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x2) Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 256K x 8 | товар відсутній | |||||||||||||||||
GD25Q20EKIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (1.5x1.5) Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 256K x 8 | товар відсутній | |||||||||||||||||
GD25Q20EKIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q20ESIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q20ESIGR | GigaDevice Semiconductor (HK) Limited | Description: 2MBIT, 3.3V, SOP8 208MIL, INDUST Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 256K x 8 | на замовлення 1470 шт: термін постачання 21-31 дні (днів) |
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GD25Q20ESIGR | GigaDevice Semiconductor (HK) Limited | Description: 2MBIT, 3.3V, SOP8 208MIL, INDUST Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 256K x 8 | товар відсутній | |||||||||||||||||
GD25Q20ETIGR | GigaDevice Semiconductor (HK) Limited | Description: 2MBIT, 3.3V, SOP8 150MIL, INDUST Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 256K x 8 | на замовлення 1216 шт: термін постачання 21-31 дні (днів) |
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GD25Q20ETIGR | GigaDevice | NOR Flash | на замовлення 2890 шт: термін постачання 21-30 дні (днів) |
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GD25Q20ETIGR | GigaDevice Semiconductor (HK) Limited | Description: 2MBIT, 3.3V, SOP8 150MIL, INDUST Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 256K x 8 | товар відсутній | |||||||||||||||||
GD25Q20ETJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 140µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 256K x 8 | товар відсутній | |||||||||||||||||
GD25Q20ETJGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q21BTIG | GigaDevice | NOR Flash 2Mb SPI NOR 2.7V-3.6V SOP8 150 | товар відсутній | |||||||||||||||||
GD25Q21BTIGR | GigaDevice | NOR Flash NOR FLASH 2M 3.3V, SOP8 150mil | товар відсутній | |||||||||||||||||
GD25Q21BTIGRR | GigaDevice | NOR Flash Use P/N GD25Q21BTIGR | товар відсутній | |||||||||||||||||
GD25Q256DBIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 256MBIT SPI/QUAD 24TFBGA Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25Q256DBIGY | GigaDevice | NOR Flash 256Mbit NOR Flash /3.3V /TFBGA24(5*5 ball array) /Industrial(-40? to +85?) /Tray | товар відсутній | |||||||||||||||||
GD25Q256DFIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 16SOP Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 DigiKey Programmable: Not Verified | на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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GD25Q256DFIGR | GigaDevice | NOR Flash 256Mbit NOR Flash /3.3V /SOP16 300mil /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25Q256DFIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 16SOP Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 DigiKey Programmable: Not Verified | на замовлення 1998 шт: термін постачання 21-31 дні (днів) |
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GD25Q256DYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 DigiKey Programmable: Not Verified | на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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GD25Q256DYIGR | GigaDevice Semiconductor | NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3.3V 256M-bit 256M/128M/64M x 1/2-bit/4-bit 7ns 8-Pin WSON EP T/R | товар відсутній | |||||||||||||||||
GD25Q256DYIGR | GigaDevice | NOR Flash 256Mbit NOR Flash /3.3V /WSON8 8*6mm /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25Q256DYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 DigiKey Programmable: Not Verified | на замовлення 5494 шт: термін постачання 21-31 дні (днів) |
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GD25Q256DYJGR | GigaDevice | NOR Flash 256Mbit NOR Flash /3.3V /WSON8 8*6mm /Industrial(-40? to +105?) /T&R | товар відсутній | |||||||||||||||||
GD25Q256EBIRY | Gigadevice Semiconductor | GD25Q256EBIRY | на замовлення 1277 шт: термін постачання 21-31 дні (днів) |
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GD25Q256EBIRY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q256EBIRY | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 256MBIT SPI/QUAD 24TFBGA Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25Q256EFIRR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 16SOP Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25Q256EFIRR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q256EFIRY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q256EFIRY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 16SOP Packaging: Tray Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25Q256EFJRR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 16SOP Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25Q256EFJRR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q256EWIGR | GigaDevice | NOR Flash | на замовлення 2933 шт: термін постачання 21-30 дні (днів) |
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GD25Q256EWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 90µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 32M x 8 | на замовлення 1470 шт: термін постачання 21-31 дні (днів) |
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GD25Q256EWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 90µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25Q256EWIGY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q256EWIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25Q256EWJGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q256EWJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25Q256EYEGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q256EYEGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25Q256EYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 32M x 8 DigiKey Programmable: Not Verified | на замовлення 1774 шт: термін постачання 21-31 дні (днів) |
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GD25Q256EYIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q256EYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 32M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25Q256EYIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25Q256EYIGY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q256EYJGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q256EYJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | товар відсутній | |||||||||||||||||
GD25Q257DFIGR | GigaDevice | NOR Flash 256Mbit NOR Flash /ECC / 3.3V /SOP16 300mil /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25Q257DYIGR | GigaDevice | NOR Flash 256Mbit NOR Flash /ECC /3.3V /WSON8 8*6mm /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25Q32BSIG | GIGADEVICE | Serial FLASH, Dual/Quad SPI, 32Mbit (4M x 8-bit), 120MHz, 2.7?3.6V, -40?85°C Repl. W25Q32FVSSIG, EN25Q32B-104HIP, S25FL032P0XMFI011, SST25VF032B-80-4I-S2AF GD25Q32BSIG PEF25q32bsig кількість в упаковці: 5 шт | на замовлення 74 шт: термін постачання 28-31 дні (днів) |
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GD25Q32BSIGR | GigaDevice | NOR Flash NOR FLASH 32M 3.3V, SOP8 208mi | товар відсутній | |||||||||||||||||
GD25Q32BSIGRR | GigaDevice | NOR Flash NOR FLASH 32M 3.3V, SOP8 208mi | товар відсутній | |||||||||||||||||
GD25Q32BSIGRY | GigaDevice | NOR Flash NOR FLASH 32M 3.3V, SOP8 208mi | товар відсутній | |||||||||||||||||
GD25Q32BWIGRR | GigaDevice | NOR Flash NOR FLASH 32M 3.3V, WSON8 6*5m | товар відсутній | |||||||||||||||||
GD25Q32CBIGY | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /TFBGA24(5*5 ball array) /Industrial(-40? to +85?) /Tray | товар відсутній | |||||||||||||||||
GD25Q32CBIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 24TFBGA Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25Q32CHIGR | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /USON8 3*3mm /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25Q32CHIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x3) Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25Q32CNIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8USON Packaging: Cut Tape (CT) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x3) Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | на замовлення 12620 шт: термін постачання 21-31 дні (днів) |
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GD25Q32CNIGR | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /USON8 3*4mm /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25Q32CNIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x3) Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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GD25Q32CSIG | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /Tube | товар відсутній | |||||||||||||||||
GD25Q32CSIG Код товару: 124468 | Мікросхеми > Пам'ять | товар відсутній | ||||||||||||||||||
GD25Q32CSIG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Verified | товар відсутній | |||||||||||||||||
GD25Q32CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Verified | на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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GD25Q32CSIGR | GigaDevice Semiconductor | 3.3V Uniform Sector Serial Flash | товар відсутній | |||||||||||||||||
GD25Q32CSIGR | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25Q32CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Verified | на замовлення 16406 шт: термін постачання 21-31 дні (днів) |
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GD25Q32CSIGR Код товару: 165564 | Мікросхеми > Пам'ять | товар відсутній | ||||||||||||||||||
GD25Q32CSJG | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +105?) /Tube | товар відсутній | |||||||||||||||||
GD25Q32CSJG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Verified | товар відсутній | |||||||||||||||||
GD25Q32CSJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Verified | товар відсутній | |||||||||||||||||
GD25Q32CSJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Verified | товар відсутній | |||||||||||||||||
GD25Q32CSJGR | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +105?) /T&R | товар відсутній | |||||||||||||||||
GD25Q32CTIG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25Q32CTIG | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /Tube | товар відсутній | |||||||||||||||||
GD25Q32CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | на замовлення 13196 шт: термін постачання 21-31 дні (днів) |
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GD25Q32CTIGR | Gigadevice Semiconductor | GD25Q32CTIGR | товар відсутній | |||||||||||||||||
GD25Q32CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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GD25Q32CTIGR | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25Q32CTJG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25Q32CTJG | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +105?) /Tube | товар відсутній | |||||||||||||||||
GD25Q32CTJGR | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +105?) /T&R | товар відсутній | |||||||||||||||||
GD25Q32CTJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25Q32CVIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8VSOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-VSOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Verified | товар відсутній | |||||||||||||||||
GD25Q32CVIGR | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /VSOP8 208mil /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25Q32CWIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 32MbFLASH; Quad I/O,SPI; 120MHz; 2.7÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 32Mb FLASH Interface: Quad I/O; SPI Operating frequency: 120MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V | товар відсутній | |||||||||||||||||
GD25Q32CWIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 32MbFLASH; Quad I/O,SPI; 120MHz; 2.7÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 32Mb FLASH Interface: Quad I/O; SPI Operating frequency: 120MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V кількість в упаковці: 3000 шт | товар відсутній | |||||||||||||||||
GD25Q32CWIGR | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /WSON8 6*5mm /Industrial(-40? to +85?) /T&R | товар відсутній | |||||||||||||||||
GD25Q32CWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | на замовлення 18704 шт: термін постачання 21-31 дні (днів) |
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GD25Q32CWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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GD25Q32CZIGY | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /TFBGA24(6*4 ball array) /Industrial(-40? to +85?) /Tray | товар відсутній | |||||||||||||||||
GD25Q32CZIGY | GigaDevice Semiconductor (HK) Limited | Description: Serial SPI NOR Flash 32Mb 3.3v 6 Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: Parallel Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | на замовлення 2880 шт: термін постачання 21-31 дні (днів) |
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GD25Q32EEIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q32EEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x2) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 | товар відсутній | |||||||||||||||||
GD25Q32ENEGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q32ENEGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x4) Part Status: Active Write Cycle Time - Word, Page: 140µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 | товар відсутній | |||||||||||||||||
GD25Q32ENIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q32ENIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x4) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 | товар відсутній | |||||||||||||||||
GD25Q32ESIG | GigaDevice | NOR Flash | на замовлення 6904 шт: термін постачання 21-30 дні (днів) |
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GD25Q32ESIG | GigaDevice Semiconductor | Uniform Sector Dual and Quad Serial Flash GD25Q32E | товар відсутній | |||||||||||||||||
GD25Q32ESIGR | Gigadevice Semiconductor | NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 32M-bit 4M x 8 7ns 8-Pin SOP T/R | товар відсутній | |||||||||||||||||
GD25Q32ESIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25Q32ESIGR | GigaDevice Semiconductor | GD25Q32ESIGR | товар відсутній | |||||||||||||||||
GD25Q32ESIGR | GIGADEVICE | GD25Q32ESIGR Serial FLASH memories - integrated circ. | товар відсутній | |||||||||||||||||
GD25Q32ESIGR | GigaDevice | NOR Flash | на замовлення 3226 шт: термін постачання 21-30 дні (днів) |
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GD25Q32ESIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | на замовлення 1794 шт: термін постачання 21-31 дні (днів) |
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GD25Q32ESJGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q32ESJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 140µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 | товар відсутній | |||||||||||||||||
GD25Q32ETIG | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q32ETIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25Q32ETIGR | GigaDevice | NOR Flash | на замовлення 5026 шт: термін постачання 21-30 дні (днів) |
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GD25Q32ETIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | на замовлення 5088 шт: термін постачання 21-31 дні (днів) |
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GD25Q32ETJGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q32ETJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 140µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 | товар відсутній | |||||||||||||||||
GD25Q32EWIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 32MbFLASH; Quad I/O,SPI; 133MHz; 2.7÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 32Mb FLASH Interface: Quad I/O; SPI Operating frequency: 133MHz Case: WSON8 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V кількість в упаковці: 3000 шт | товар відсутній | |||||||||||||||||
GD25Q32EWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8WSON Packaging: Cut Tape (CT) Part Status: Active Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 | на замовлення 2431 шт: термін постачання 21-31 дні (днів) |
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GD25Q32EWIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 32MbFLASH; Quad I/O,SPI; 133MHz; 2.7÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 32Mb FLASH Interface: Quad I/O; SPI Operating frequency: 133MHz Case: WSON8 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V | товар відсутній | |||||||||||||||||
GD25Q32EWIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q32EWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 | товар відсутній | |||||||||||||||||
GD25Q32EWJGY | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 140µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 | товар відсутній | |||||||||||||||||
GD25Q32EWJGY | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q40CE2GR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q40CE2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x2) Write Cycle Time - Word, Page: 60µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 512K x 8 | товар відсутній | |||||||||||||||||
GD25Q40CEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 512K x 8 DigiKey Programmable: Not Verified | на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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GD25Q40CEIGR | GigaDevice | NOR Flash 4Mbit NOR Flash /3.3V /USON8 3*2*0.45mm /Industrial(-40? to +85?) /T&R | на замовлення 4352 шт: термін постачання 21-30 дні (днів) |
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GD25Q40CEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD 8USON Packaging: Cut Tape (CT) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 512K x 8 DigiKey Programmable: Not Verified | на замовлення 18360 шт: термін постачання 21-31 дні (днів) |
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GD25Q40CEJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 4MBIT SPI/QUAD I/O 8USON Packaging: Cut Tape (CT) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 512K x 8 DigiKey Programmable: Not Verified | на замовлення 7169 шт: термін постачання 21-31 дні (днів) |
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GD25Q40CEJGR | GigaDevice | NOR Flash 4Mbit NOR Flash /3.3V /USON8 3*2*0.45mm /Industrial(-40? to +105?) /T&R | на замовлення 5109 шт: термін постачання 21-30 дні (днів) |
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GD25Q40CEJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 4MBIT SPI/QUAD I/O 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 512K x 8 DigiKey Programmable: Not Verified | на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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GD25Q40CSIG | GigaDevice | NOR Flash 4Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /Tube | товар відсутній | |||||||||||||||||
GD25Q40CSIG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD I/O 8SOP Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 512K x 8 DigiKey Programmable: Verified | товар відсутній | |||||||||||||||||
GD25Q40CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD I/O 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 512K x 8 DigiKey Programmable: Verified | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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GD25Q40CSIGR | GigaDevice | NOR Flash 4Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /T&R | на замовлення 3995 шт: термін постачання 21-30 дні (днів) |
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GD25Q40CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD I/O 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 512K x 8 DigiKey Programmable: Verified | на замовлення 5095 шт: термін постачання 21-31 дні (днів) |
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GD25Q40CT2GR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q40CT2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 512K x 8 | товар відсутній | |||||||||||||||||
GD25Q40CTIG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD I/O 8SOP Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 512K x 8 DigiKey Programmable: Not Verified | товар відсутній | |||||||||||||||||
GD25Q40CTIG | GigaDevice Semiconductor | Serial Flash Memory | товар відсутній | |||||||||||||||||
GD25Q40CTIG | GigaDevice | NOR Flash 4Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /Tube | товар відсутній | |||||||||||||||||
GD25Q40CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD I/O 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 512K x 8 DigiKey Programmable: Not Verified | на замовлення 12700 шт: термін постачання 21-31 дні (днів) |
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GD25Q40CTIGR | GigaDevice | NOR Flash 4Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /T&R | на замовлення 5578 шт: термін постачання 21-30 дні (днів) |
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GD25Q40CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD I/O 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 512K x 8 DigiKey Programmable: Not Verified | на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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GD25Q40EEAGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x2) Write Cycle Time - Word, Page: 140µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 512K x 8 | товар відсутній | |||||||||||||||||
GD25Q40EEAGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q40EEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x2) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 512K x 8 | товар відсутній | |||||||||||||||||
GD25Q40EEIGR | GigaDevice | NOR Flash | на замовлення 2980 шт: термін постачання 21-30 дні (днів) |
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GD25Q40EKIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (1.5x1.5) Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 512K x 8 | товар відсутній | |||||||||||||||||
GD25Q40EKIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q40ESIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 512K x 8 | товар відсутній | |||||||||||||||||
GD25Q40ESIGR | GigaDevice | NOR Flash | товар відсутній | |||||||||||||||||
GD25Q40ET2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Grade: Automotive Write Cycle Time - Word, Page: 140µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 512K x 8 Qualification: AEC-Q100 | товар відсутній | |||||||||||||||||
GD25Q40ET2GR | GigaDevice | NOR Flash | товар відсутній |