GD25Q32EEIGR GigaDevice Semiconductor (HK) Limited
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 32MBIT SPI/QUAD 8USON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (3x2)
Part Status: Active
Write Cycle Time - Word, Page: 70µs, 2.4ms
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 4M x 8
Description: IC FLASH 32MBIT SPI/QUAD 8USON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (3x2)
Part Status: Active
Write Cycle Time - Word, Page: 70µs, 2.4ms
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 4M x 8
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Технічний опис GD25Q32EEIGR GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 32MBIT SPI/QUAD 8USON, Packaging: Tape & Reel (TR), Package / Case: 8-XFDFN Exposed Pad, Mounting Type: Surface Mount, Memory Size: 32Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NOR (SLC), Clock Frequency: 133 MHz, Memory Format: FLASH, Supplier Device Package: 8-USON (3x2), Part Status: Active, Write Cycle Time - Word, Page: 70µs, 2.4ms, Memory Interface: SPI - Quad I/O, Access Time: 7 ns, Memory Organization: 4M x 8.
Інші пропозиції GD25Q32EEIGR
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GD25Q32EEIGR | Виробник : GigaDevice |
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