GD25LB128EWIGR GigaDevice Semiconductor (HK) Limited
![DS-00641-GD25LB128E-Rev1.1.pdf](/images/adobe-acrobat.png)
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Memory Interface: SPI - Quad I/O, QPI, DTR
Memory Organization: 16M x 8
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Технічний опис GD25LB128EWIGR GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 128MBIT SPI/QUAD 8WSON, Packaging: Tape & Reel (TR), Package / Case: 8-WDFN Exposed Pad, Mounting Type: Surface Mount, Memory Size: 128Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.65V ~ 2V, Technology: FLASH - NOR (SLC), Clock Frequency: 133 MHz, Memory Format: FLASH, Supplier Device Package: 8-WSON (5x6), Memory Interface: SPI - Quad I/O, QPI, DTR, Memory Organization: 16M x 8.
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GD25LB128EWIGR | Виробник : GigaDevice |
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