GD25LE32E3IGR GigaDevice Semiconductor (HK) Limited
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Description: IC FLASH 32MBIT SPI/QUAD 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 10-WLCSP
Write Cycle Time - Word, Page: 60µs, 2.4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 4M x 8
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Технічний опис GD25LE32E3IGR GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 32MBIT SPI/QUAD 10WLCSP, Packaging: Tape & Reel (TR), Package / Case: 10-XFBGA, WLCSP, Mounting Type: Surface Mount, Memory Size: 32Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.65V ~ 2V, Technology: FLASH - NOR (SLC), Clock Frequency: 133 MHz, Memory Format: FLASH, Supplier Device Package: 10-WLCSP, Write Cycle Time - Word, Page: 60µs, 2.4ms, Memory Interface: SPI - Quad I/O, QPI, Access Time: 6 ns, Memory Organization: 4M x 8.
Інші пропозиції GD25LE32E3IGR
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GD25LE32E3IGR | Виробник : GigaDevice |
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