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GD25Q40ET2GR GigaDevice Semiconductor (HK) Limited
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 4MBIT SPI/QUAD 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Grade: Automotive
Write Cycle Time - Word, Page: 140µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 512K x 8
Qualification: AEC-Q100
Description: IC FLASH 4MBIT SPI/QUAD 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Grade: Automotive
Write Cycle Time - Word, Page: 140µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 512K x 8
Qualification: AEC-Q100
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Технічний опис GD25Q40ET2GR GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 4MBIT SPI/QUAD 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Supplier Device Package: 8-SOP, Memory Size: 4Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 105°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NOR (SLC), Clock Frequency: 133 MHz, Memory Format: FLASH, Grade: Automotive, Write Cycle Time - Word, Page: 140µs, 4ms, Memory Interface: SPI - Quad I/O, Access Time: 7 ns, Memory Organization: 512K x 8, Qualification: AEC-Q100.
Інші пропозиції GD25Q40ET2GR
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
GD25Q40ET2GR | Виробник : GigaDevice | NOR Flash |
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