Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (354679) > Сторінка 790 з 5912
Фото | Назва | Виробник | Інформація |
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A54SX32A-1FG256M | Microchip Technology | Description: IC FPGA 203 I/O 256FBGA |
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A54SX32A-1FGG256M | Microchip Technology | Description: IC FPGA 203 I/O 256FBGA |
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A54SX32A-1TQG100M | Microchip Technology |
Description: IC FPGA 81 I/O 100TQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Number of Gates: 48000 Operating Temperature: -55°C ~ 125°C (TC) Voltage - Supply: 2.25V ~ 5.25V Supplier Device Package: 100-TQFP (14x14) Number of LABs/CLBs: 2880 Number of I/O: 81 DigiKey Programmable: Not Verified |
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A54SX32A-1TQG144M | Microchip Technology |
Description: IC FPGA 113 I/O 144TQFP Packaging: Tray Package / Case: 144-LQFP Mounting Type: Surface Mount Number of Gates: 48000 Operating Temperature: -55°C ~ 125°C (TC) Voltage - Supply: 2.25V ~ 5.25V Supplier Device Package: 144-TQFP (20x20) Number of LABs/CLBs: 2880 Number of I/O: 113 DigiKey Programmable: Not Verified |
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APA300-FGG256M | Microchip Technology | Description: IC FPGA 186 I/O 256FBGA |
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APA300-PQG208M | Microchip Technology |
Description: IC FPGA 158 I/O 208QFP Packaging: Tray Package / Case: 208-BFQFP Mounting Type: Surface Mount Number of Gates: 300000 Operating Temperature: -55°C ~ 125°C (TC) Voltage - Supply: 2.3V ~ 2.7V Supplier Device Package: 208-PQFP (28x28) Total RAM Bits: 73728 Part Status: Active Number of I/O: 158 DigiKey Programmable: Not Verified |
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A54SX32A-CQ208M | Microchip Technology |
Description: IC FPGA 174 I/O 208CQFP Packaging: Tray Package / Case: 208-BFCQFP with Tie Bar Mounting Type: Surface Mount Number of Gates: 48000 Operating Temperature: -55°C ~ 125°C (TC) Voltage - Supply: 2.25V ~ 5.25V Supplier Device Package: 208-CQFP (75x75) Number of LABs/CLBs: 2880 Number of I/O: 174 DigiKey Programmable: Not Verified |
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APA600-CQ208M | Microchip Technology |
Description: IC FPGA 158 I/O 208CQFP Packaging: Tray Package / Case: 208-BFCQFP with Tie Bar Mounting Type: Surface Mount Number of Gates: 600000 Operating Temperature: -55°C ~ 125°C (TC) Voltage - Supply: 2.3V ~ 2.7V Supplier Device Package: 208-CQFP (75x75) Total RAM Bits: 129024 Number of I/O: 158 DigiKey Programmable: Not Verified |
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APA600-FG256M | Microchip Technology | Description: IC FPGA 186 I/O 256FBGA |
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APA600-FGG256M | Microchip Technology | Description: IC FPGA 186 I/O 256FBGA |
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A2F500M3G-FGG256M | Microchip Technology | Description: IC SOC CORTEX-M3 80MHZ 256FBGA |
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A54SX32A-FGG256M | Microchip Technology | Description: IC FPGA 203 I/O 256FBGA |
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A54SX16A-1PQ208M | Microchip Technology |
Description: IC FPGA 175 I/O 208QFP Packaging: Tray Package / Case: 208-BFQFP Mounting Type: Surface Mount Number of Gates: 24000 Operating Temperature: -55°C ~ 125°C (TC) Voltage - Supply: 2.25V ~ 5.25V Supplier Device Package: 208-PQFP (28x28) Number of LABs/CLBs: 1452 Part Status: Obsolete Number of I/O: 175 |
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APA1000-BG456M | Microchip Technology |
Description: IC FPGA 356 I/O 456BGA Packaging: Tray Package / Case: 456-BBGA Mounting Type: Surface Mount Number of Gates: 1000000 Operating Temperature: -55°C ~ 125°C (TC) Voltage - Supply: 2.3V ~ 2.7V Supplier Device Package: 456-PBGA (35x35) Total RAM Bits: 202752 Number of I/O: 356 DigiKey Programmable: Not Verified |
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APTGL60H120T3G | Microchip Technology |
Description: IGBT MODULE 1200V 80A 280W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 280 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 2.77 nF @ 25 V |
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APT30DF100HJ | Microchip Technology |
Description: BRIDGE RECT 1P 1KV 45A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 175°C (TJ) Technology: Standard Supplier Device Package: SOT-227 Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 45 A Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
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APT30DF20HJ | Microchip Technology |
Description: BRIDGE RECT 1P 200V 45A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: SOT-227 Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 45 A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 200 V |
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APT50DF170HJ | Microchip Technology |
Description: BRIDGE RECT 1P 1.7KV 50A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: SOT-227 (ISOTOP®) Part Status: Active Voltage - Peak Reverse (Max): 1.7 kV Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 50 A Current - Reverse Leakage @ Vr: 250 µA @ 1700 V |
на замовлення 14 шт: термін постачання 21-31 дні (днів) |
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APT40GL120JU3 | Microchip Technology |
Description: IGBT MOD 1200V 65A 220W SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis, Stud Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A NTC Thermistor: No Supplier Device Package: SOT-227 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 220 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V |
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APTGF150A60T3AG | Microchip Technology |
Description: IGBT MODULE 600V 230A 833W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: NPT Part Status: Obsolete Current - Collector (Ic) (Max): 230 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 833 W Current - Collector Cutoff (Max): 350 µA Input Capacitance (Cies) @ Vce: 9 nF @ 25 V |
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APTGF50DH120T3G | Microchip Technology | Description: IGBT MODULE 1200V 70A 312W SP3 |
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APTGF50DSK120T3G | Microchip Technology | Description: IGBT MODULE 1200V 70A 312W SP3 |
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APTGL120TDU120TPG | Microchip Technology |
Description: IGBT MODULE 1200V 140A 517W SP6P Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Triple, Dual - Common Source Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: SP6-P IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 140 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 517 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V |
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APTGL40H120T1G | Microchip Technology |
Description: IGBT MODULE 1200V 65A 220W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 220 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V |
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APTGL40X120T3G | Microchip Technology |
Description: IGBT MODULE 1200V 65A 220W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 220 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V |
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APTGL90A120T1G | Microchip Technology |
Description: IGBT MODULE 1200V 110A 385W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Through Hole Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 110 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 385 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V |
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APTGL90DA120T1G | Microchip Technology |
Description: IGBT MODULE 1200V 110A 385W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 110 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 385 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V |
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APT90DR160HJ | Microchip Technology |
Description: BRIDGE RECT 1PHASE 1.6KV SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: SOT-227 Voltage - Peak Reverse (Max): 1.6 kV Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 90 A Current - Reverse Leakage @ Vr: 50 µA @ 1600 V |
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APTGL90DDA120T3G | Microchip Technology |
Description: IGBT MODULE 1200V 110A 385W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Dual Boost Chopper Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 110 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 385 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V |
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APTGL90DSK120T3G | Microchip Technology |
Description: IGBT MODULE 1200V 110A 385W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Dual Buck Chopper Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 110 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 385 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V |
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APTGL90H120T3G | Microchip Technology |
Description: IGBT MODULE 1200V 110A 385W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 110 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 385 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V |
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APTGT200DA60T3AG | Microchip Technology | Description: IGBT MODULE 600V 290A 750W SP3 |
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APTGT200SK60T3AG | Microchip Technology |
Description: IGBT MODULE 600V 290A 750W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 290 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 750 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V |
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APTGT20TL601G | Microchip Technology |
Description: IGBT MODULE 600V 32A 62W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A NTC Thermistor: No Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 32 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 62 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1.1 pF @ 25 V |
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APT60DF20HJ | Microchip Technology |
Description: BRIDGE RECT 1P 200V 90A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: SOT-227 Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 90 A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 60 A Current - Reverse Leakage @ Vr: 250 µA @ 200 V |
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APT75DF170HJ | Microchip Technology | Description: BRIDGE RECT 1P 1.7KV 75A SOT227 |
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APT75DL120HJ | Microchip Technology | Description: BRIDGE RECT 1P 1.2KV 75A SOT227 |
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APT40GL120JU2 | Microchip Technology |
Description: IGBT MOD 1200V 65A 220W SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis, Stud Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A NTC Thermistor: No Supplier Device Package: SOT-227 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 220 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V |
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APT13F120S | Microchip Technology | Description: MOSFET N-CH 1200V 14A D3PAK |
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APT14F100S | Microchip Technology |
Description: MOSFET N-CH 1000V 14A D3PAK Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 7A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3Pak Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V |
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APT37F50S | Microchip Technology |
Description: MOSFET N-CH 500V 37A D3PAK Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5710 pF @ 25 V |
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APT33N90JCU2 | Microchip Technology |
Description: MOSFET N-CH 900V 33A SOT227 Packaging: Tray Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 3mA Supplier Device Package: SOT-227 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V |
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APT33N90JCU3 | Microchip Technology |
Description: MOSFET N-CH 900V 33A SOT227 Packaging: Tray Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 3mA Supplier Device Package: SOT-227 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V |
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APTC60DDAM45T1G | Microchip Technology | Description: MOSFET 2N-CH 600V 49A SP1 |
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APTC60DSKM24T3G | Microchip Technology |
Description: MOSFET 2N-CH 600V 95A SP3 Packaging: Tray Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 2 N Channel (Dual Buck Chopper) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 462W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 95A Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 5mA Supplier Device Package: SP3 Part Status: Active |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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APT30DQ60BHBG | Microchip Technology |
Description: DIODE ARRAY GP 600V 30A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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APT25GN120SG | Microchip Technology |
Description: IGBT 1200V 67A 272W D3PAK Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: D3Pak IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/280ns Test Condition: 800V, 25A, 1Ohm, 15V Gate Charge: 155 nC Current - Collector (Ic) (Max): 67 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 272 W |
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APT200GT60JR | Microchip Technology |
Description: IGBT MOD 600V 195A 500W SOT227 Packaging: Tray Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A NTC Thermistor: No Supplier Device Package: SOT-227 IGBT Type: NPT Current - Collector (Ic) (Max): 195 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 500 W Current - Collector Cutoff (Max): 25 µA Input Capacitance (Cies) @ Vce: 8.65 nF @ 25 V |
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APT42F50S | Microchip Technology |
Description: MOSFET N-CH 500V 42A D3PAK Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 21A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3Pak Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6810 pF @ 25 V |
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APT30F50S | Microchip Technology |
Description: MOSFET N-CH 500V 30A D3PAK Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 14A, 10V Power Dissipation (Max): 415W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3Pak Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4525 pF @ 25 V |
товар відсутній |
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APTC60VDAM45T1G | Microchip Technology | Description: MOSFET 2N-CH 600V 49A SP1 |
товар відсутній |
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24LC128T-I/SN | Microchip Technology |
Description: IC EEPROM 128KBIT I2C 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 16K x 8 DigiKey Programmable: Verified |
на замовлення 17979 шт: термін постачання 21-31 дні (днів) |
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24LC32AT-I/SN | Microchip Technology |
Description: IC EEPROM 32KBIT I2C 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 4K x 8 DigiKey Programmable: Verified |
на замовлення 97526 шт: термін постачання 21-31 дні (днів) |
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LAN8710A-EZC-TR | Microchip Technology |
Description: IC TRANSCEIVER FULL 4/4 32QFN Packaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Type: Transceiver Operating Temperature: 0°C ~ 85°C Voltage - Supply: 1.6V ~ 3.6V Number of Drivers/Receivers: 4/4 Protocol: MII, RMII Supplier Device Package: 32-QFN (5x5) Duplex: Full Part Status: Active |
на замовлення 9210 шт: термін постачання 21-31 дні (днів) |
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LAN8710A-EZK-TR | Microchip Technology |
Description: IC TRANSCEIVER FULL 4/4 32QFN Packaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Type: Transceiver Operating Temperature: 0°C ~ 85°C Voltage - Supply: 1.6V ~ 3.6V Number of Drivers/Receivers: 4/4 Protocol: MII, RMII Supplier Device Package: 32-QFN (5x5) Duplex: Full Part Status: Active |
на замовлення 52034 шт: термін постачання 21-31 дні (днів) |
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LAN8720A-CP-TR | Microchip Technology |
Description: IC TRANSCEIVER FULL 2/2 24QFN Packaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Type: Transceiver Operating Temperature: 0°C ~ 85°C Voltage - Supply: 1.6V ~ 3.6V Number of Drivers/Receivers: 2/2 Protocol: RMII Supplier Device Package: 24-QFN (4x4) Duplex: Full Part Status: Active |
на замовлення 12212 шт: термін постачання 21-31 дні (днів) |
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MCP23S17T-E/SS | Microchip Technology |
Description: IC XPNDR 10MHZ SPI 28SSOP Packaging: Cut Tape (CT) Package / Case: 28-SSOP (0.209", 5.30mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Interface: SPI Number of I/O: 16 Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.8V ~ 5.5V Clock Frequency: 10 MHz Interrupt Output: Yes Supplier Device Package: 28-SSOP Current - Output Source/Sink: 25mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 1037 шт: термін постачання 21-31 дні (днів) |
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MCP2515T-I/SO | Microchip Technology |
Description: IC CAN CONTROLLER W/SPI 18SOIC Packaging: Cut Tape (CT) Package / Case: 18-SOIC (0.295", 7.50mm Width) Function: Controller Interface: SPI Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 5.5V Current - Supply: 10mA Protocol: CANbus Standards: CAN 2.0 Supplier Device Package: 18-SOIC Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 14318 шт: термін постачання 21-31 дні (днів) |
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MCP2515T-I/ST | Microchip Technology |
Description: IC CAN CONTROLLER W/SPI 20TSSOP Packaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Function: Controller Interface: SPI Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 5.5V Current - Supply: 10mA Protocol: CANbus Standards: CAN 2.0 Supplier Device Package: 20-TSSOP Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 8394 шт: термін постачання 21-31 дні (днів) |
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MCP2551T-E/SN | Microchip Technology |
Description: IC TRANSCEIVER HALF 1/1 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Number of Drivers/Receivers: 1/1 Protocol: CANbus Supplier Device Package: 8-SOIC Receiver Hysteresis: 200 mV Duplex: Half Part Status: Active |
на замовлення 39108 шт: термін постачання 21-31 дні (днів) |
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A54SX32A-1FGG256M |
Виробник: Microchip Technology
Description: IC FPGA 203 I/O 256FBGA
Description: IC FPGA 203 I/O 256FBGA
товар відсутній
A54SX32A-1TQG100M |
Виробник: Microchip Technology
Description: IC FPGA 81 I/O 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Number of Gates: 48000
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 2.25V ~ 5.25V
Supplier Device Package: 100-TQFP (14x14)
Number of LABs/CLBs: 2880
Number of I/O: 81
DigiKey Programmable: Not Verified
Description: IC FPGA 81 I/O 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Number of Gates: 48000
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 2.25V ~ 5.25V
Supplier Device Package: 100-TQFP (14x14)
Number of LABs/CLBs: 2880
Number of I/O: 81
DigiKey Programmable: Not Verified
товар відсутній
A54SX32A-1TQG144M |
Виробник: Microchip Technology
Description: IC FPGA 113 I/O 144TQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Number of Gates: 48000
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 2.25V ~ 5.25V
Supplier Device Package: 144-TQFP (20x20)
Number of LABs/CLBs: 2880
Number of I/O: 113
DigiKey Programmable: Not Verified
Description: IC FPGA 113 I/O 144TQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Number of Gates: 48000
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 2.25V ~ 5.25V
Supplier Device Package: 144-TQFP (20x20)
Number of LABs/CLBs: 2880
Number of I/O: 113
DigiKey Programmable: Not Verified
товар відсутній
APA300-PQG208M |
Виробник: Microchip Technology
Description: IC FPGA 158 I/O 208QFP
Packaging: Tray
Package / Case: 208-BFQFP
Mounting Type: Surface Mount
Number of Gates: 300000
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 2.3V ~ 2.7V
Supplier Device Package: 208-PQFP (28x28)
Total RAM Bits: 73728
Part Status: Active
Number of I/O: 158
DigiKey Programmable: Not Verified
Description: IC FPGA 158 I/O 208QFP
Packaging: Tray
Package / Case: 208-BFQFP
Mounting Type: Surface Mount
Number of Gates: 300000
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 2.3V ~ 2.7V
Supplier Device Package: 208-PQFP (28x28)
Total RAM Bits: 73728
Part Status: Active
Number of I/O: 158
DigiKey Programmable: Not Verified
товар відсутній
A54SX32A-CQ208M |
Виробник: Microchip Technology
Description: IC FPGA 174 I/O 208CQFP
Packaging: Tray
Package / Case: 208-BFCQFP with Tie Bar
Mounting Type: Surface Mount
Number of Gates: 48000
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 2.25V ~ 5.25V
Supplier Device Package: 208-CQFP (75x75)
Number of LABs/CLBs: 2880
Number of I/O: 174
DigiKey Programmable: Not Verified
Description: IC FPGA 174 I/O 208CQFP
Packaging: Tray
Package / Case: 208-BFCQFP with Tie Bar
Mounting Type: Surface Mount
Number of Gates: 48000
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 2.25V ~ 5.25V
Supplier Device Package: 208-CQFP (75x75)
Number of LABs/CLBs: 2880
Number of I/O: 174
DigiKey Programmable: Not Verified
товар відсутній
APA600-CQ208M |
Виробник: Microchip Technology
Description: IC FPGA 158 I/O 208CQFP
Packaging: Tray
Package / Case: 208-BFCQFP with Tie Bar
Mounting Type: Surface Mount
Number of Gates: 600000
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 2.3V ~ 2.7V
Supplier Device Package: 208-CQFP (75x75)
Total RAM Bits: 129024
Number of I/O: 158
DigiKey Programmable: Not Verified
Description: IC FPGA 158 I/O 208CQFP
Packaging: Tray
Package / Case: 208-BFCQFP with Tie Bar
Mounting Type: Surface Mount
Number of Gates: 600000
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 2.3V ~ 2.7V
Supplier Device Package: 208-CQFP (75x75)
Total RAM Bits: 129024
Number of I/O: 158
DigiKey Programmable: Not Verified
товар відсутній
A2F500M3G-FGG256M |
Виробник: Microchip Technology
Description: IC SOC CORTEX-M3 80MHZ 256FBGA
Description: IC SOC CORTEX-M3 80MHZ 256FBGA
товар відсутній
A54SX16A-1PQ208M |
Виробник: Microchip Technology
Description: IC FPGA 175 I/O 208QFP
Packaging: Tray
Package / Case: 208-BFQFP
Mounting Type: Surface Mount
Number of Gates: 24000
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 2.25V ~ 5.25V
Supplier Device Package: 208-PQFP (28x28)
Number of LABs/CLBs: 1452
Part Status: Obsolete
Number of I/O: 175
Description: IC FPGA 175 I/O 208QFP
Packaging: Tray
Package / Case: 208-BFQFP
Mounting Type: Surface Mount
Number of Gates: 24000
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 2.25V ~ 5.25V
Supplier Device Package: 208-PQFP (28x28)
Number of LABs/CLBs: 1452
Part Status: Obsolete
Number of I/O: 175
товар відсутній
APA1000-BG456M |
Виробник: Microchip Technology
Description: IC FPGA 356 I/O 456BGA
Packaging: Tray
Package / Case: 456-BBGA
Mounting Type: Surface Mount
Number of Gates: 1000000
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 2.3V ~ 2.7V
Supplier Device Package: 456-PBGA (35x35)
Total RAM Bits: 202752
Number of I/O: 356
DigiKey Programmable: Not Verified
Description: IC FPGA 356 I/O 456BGA
Packaging: Tray
Package / Case: 456-BBGA
Mounting Type: Surface Mount
Number of Gates: 1000000
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 2.3V ~ 2.7V
Supplier Device Package: 456-PBGA (35x35)
Total RAM Bits: 202752
Number of I/O: 356
DigiKey Programmable: Not Verified
товар відсутній
APTGL60H120T3G |
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 80A 280W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 2.77 nF @ 25 V
Description: IGBT MODULE 1200V 80A 280W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 2.77 nF @ 25 V
товар відсутній
APT30DF100HJ |
Виробник: Microchip Technology
Description: BRIDGE RECT 1P 1KV 45A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: SOT-227
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 45 A
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Description: BRIDGE RECT 1P 1KV 45A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: SOT-227
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 45 A
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
товар відсутній
APT30DF20HJ |
Виробник: Microchip Technology
Description: BRIDGE RECT 1P 200V 45A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SOT-227
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 45 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Description: BRIDGE RECT 1P 200V 45A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SOT-227
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 45 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
товар відсутній
APT50DF170HJ |
Виробник: Microchip Technology
Description: BRIDGE RECT 1P 1.7KV 50A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SOT-227 (ISOTOP®)
Part Status: Active
Voltage - Peak Reverse (Max): 1.7 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 50 A
Current - Reverse Leakage @ Vr: 250 µA @ 1700 V
Description: BRIDGE RECT 1P 1.7KV 50A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SOT-227 (ISOTOP®)
Part Status: Active
Voltage - Peak Reverse (Max): 1.7 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 50 A
Current - Reverse Leakage @ Vr: 250 µA @ 1700 V
на замовлення 14 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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1+ | 2700.87 грн |
APT40GL120JU3 |
Виробник: Microchip Technology
Description: IGBT MOD 1200V 65A 220W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 220 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V
Description: IGBT MOD 1200V 65A 220W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 220 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V
товар відсутній
APTGF150A60T3AG |
Виробник: Microchip Technology
Description: IGBT MODULE 600V 230A 833W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 230 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 833 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Description: IGBT MODULE 600V 230A 833W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 230 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 833 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
товар відсутній
APTGF50DH120T3G |
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 70A 312W SP3
Description: IGBT MODULE 1200V 70A 312W SP3
товар відсутній
APTGF50DSK120T3G |
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 70A 312W SP3
Description: IGBT MODULE 1200V 70A 312W SP3
товар відсутній
APTGL120TDU120TPG |
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 140A 517W SP6P
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 517 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
Description: IGBT MODULE 1200V 140A 517W SP6P
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 517 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
товар відсутній
APTGL40H120T1G |
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 65A 220W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 220 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V
Description: IGBT MODULE 1200V 65A 220W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 220 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V
товар відсутній
APTGL40X120T3G |
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 65A 220W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 220 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V
Description: IGBT MODULE 1200V 65A 220W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 220 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V
товар відсутній
APTGL90A120T1G |
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 110A 385W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Description: IGBT MODULE 1200V 110A 385W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
товар відсутній
APTGL90DA120T1G |
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 110A 385W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Description: IGBT MODULE 1200V 110A 385W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
товар відсутній
APT90DR160HJ |
Виробник: Microchip Technology
Description: BRIDGE RECT 1PHASE 1.6KV SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SOT-227
Voltage - Peak Reverse (Max): 1.6 kV
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 90 A
Current - Reverse Leakage @ Vr: 50 µA @ 1600 V
Description: BRIDGE RECT 1PHASE 1.6KV SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SOT-227
Voltage - Peak Reverse (Max): 1.6 kV
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 90 A
Current - Reverse Leakage @ Vr: 50 µA @ 1600 V
товар відсутній
APTGL90DDA120T3G |
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 110A 385W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Boost Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Description: IGBT MODULE 1200V 110A 385W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Boost Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
товар відсутній
APTGL90DSK120T3G |
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 110A 385W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Buck Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Description: IGBT MODULE 1200V 110A 385W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Buck Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
товар відсутній
APTGL90H120T3G |
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 110A 385W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Description: IGBT MODULE 1200V 110A 385W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
товар відсутній
APTGT200DA60T3AG |
Виробник: Microchip Technology
Description: IGBT MODULE 600V 290A 750W SP3
Description: IGBT MODULE 600V 290A 750W SP3
товар відсутній
APTGT200SK60T3AG |
Виробник: Microchip Technology
Description: IGBT MODULE 600V 290A 750W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V
Description: IGBT MODULE 600V 290A 750W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V
товар відсутній
APTGT20TL601G |
Виробник: Microchip Technology
Description: IGBT MODULE 600V 32A 62W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
NTC Thermistor: No
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 62 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.1 pF @ 25 V
Description: IGBT MODULE 600V 32A 62W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
NTC Thermistor: No
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 62 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.1 pF @ 25 V
товар відсутній
APT60DF20HJ |
Виробник: Microchip Technology
Description: BRIDGE RECT 1P 200V 90A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SOT-227
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 90 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Description: BRIDGE RECT 1P 200V 90A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SOT-227
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 90 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
товар відсутній
APT75DF170HJ |
Виробник: Microchip Technology
Description: BRIDGE RECT 1P 1.7KV 75A SOT227
Description: BRIDGE RECT 1P 1.7KV 75A SOT227
товар відсутній
APT75DL120HJ |
Виробник: Microchip Technology
Description: BRIDGE RECT 1P 1.2KV 75A SOT227
Description: BRIDGE RECT 1P 1.2KV 75A SOT227
товар відсутній
APT40GL120JU2 |
Виробник: Microchip Technology
Description: IGBT MOD 1200V 65A 220W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 220 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V
Description: IGBT MOD 1200V 65A 220W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 220 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V
товар відсутній
APT14F100S |
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 14A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 7A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V
Description: MOSFET N-CH 1000V 14A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 7A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V
товар відсутній
APT37F50S |
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 37A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5710 pF @ 25 V
Description: MOSFET N-CH 500V 37A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5710 pF @ 25 V
товар відсутній
APT33N90JCU2 |
Виробник: Microchip Technology
Description: MOSFET N-CH 900V 33A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: SOT-227
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Description: MOSFET N-CH 900V 33A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: SOT-227
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
товар відсутній
APT33N90JCU3 |
Виробник: Microchip Technology
Description: MOSFET N-CH 900V 33A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: SOT-227
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Description: MOSFET N-CH 900V 33A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: SOT-227
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
товар відсутній
APTC60DDAM45T1G |
Виробник: Microchip Technology
Description: MOSFET 2N-CH 600V 49A SP1
Description: MOSFET 2N-CH 600V 49A SP1
товар відсутній
APTC60DSKM24T3G |
Виробник: Microchip Technology
Description: MOSFET 2N-CH 600V 95A SP3
Packaging: Tray
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Dual Buck Chopper)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 462W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 95A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Supplier Device Package: SP3
Part Status: Active
Description: MOSFET 2N-CH 600V 95A SP3
Packaging: Tray
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Dual Buck Chopper)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 462W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 95A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Supplier Device Package: SP3
Part Status: Active
на замовлення 7 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 9518.8 грн |
APT30DQ60BHBG |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Description: DIODE ARRAY GP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
на замовлення 20 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 395.29 грн |
APT25GN120SG |
Виробник: Microchip Technology
Description: IGBT 1200V 67A 272W D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: D3Pak
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/280ns
Test Condition: 800V, 25A, 1Ohm, 15V
Gate Charge: 155 nC
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 272 W
Description: IGBT 1200V 67A 272W D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: D3Pak
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/280ns
Test Condition: 800V, 25A, 1Ohm, 15V
Gate Charge: 155 nC
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 272 W
товар відсутній
APT200GT60JR |
Виробник: Microchip Technology
Description: IGBT MOD 600V 195A 500W SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 195 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 8.65 nF @ 25 V
Description: IGBT MOD 600V 195A 500W SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 195 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 8.65 nF @ 25 V
товар відсутній
APT42F50S |
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 42A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 21A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6810 pF @ 25 V
Description: MOSFET N-CH 500V 42A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 21A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6810 pF @ 25 V
товар відсутній
APT30F50S |
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 30A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 14A, 10V
Power Dissipation (Max): 415W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4525 pF @ 25 V
Description: MOSFET N-CH 500V 30A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 14A, 10V
Power Dissipation (Max): 415W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4525 pF @ 25 V
товар відсутній
APTC60VDAM45T1G |
Виробник: Microchip Technology
Description: MOSFET 2N-CH 600V 49A SP1
Description: MOSFET 2N-CH 600V 49A SP1
товар відсутній
24LC128T-I/SN |
Виробник: Microchip Technology
Description: IC EEPROM 128KBIT I2C 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 16K x 8
DigiKey Programmable: Verified
Description: IC EEPROM 128KBIT I2C 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 16K x 8
DigiKey Programmable: Verified
на замовлення 17979 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 51.36 грн |
25+ | 48.53 грн |
100+ | 46.44 грн |
24LC32AT-I/SN |
Виробник: Microchip Technology
Description: IC EEPROM 32KBIT I2C 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Verified
Description: IC EEPROM 32KBIT I2C 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Verified
на замовлення 97526 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 32.68 грн |
25+ | 31.2 грн |
100+ | 29.12 грн |
LAN8710A-EZC-TR |
Виробник: Microchip Technology
Description: IC TRANSCEIVER FULL 4/4 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.6V ~ 3.6V
Number of Drivers/Receivers: 4/4
Protocol: MII, RMII
Supplier Device Package: 32-QFN (5x5)
Duplex: Full
Part Status: Active
Description: IC TRANSCEIVER FULL 4/4 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.6V ~ 3.6V
Number of Drivers/Receivers: 4/4
Protocol: MII, RMII
Supplier Device Package: 32-QFN (5x5)
Duplex: Full
Part Status: Active
на замовлення 9210 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 110.49 грн |
25+ | 88.84 грн |
100+ | 86.65 грн |
LAN8710A-EZK-TR |
Виробник: Microchip Technology
Description: IC TRANSCEIVER FULL 4/4 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.6V ~ 3.6V
Number of Drivers/Receivers: 4/4
Protocol: MII, RMII
Supplier Device Package: 32-QFN (5x5)
Duplex: Full
Part Status: Active
Description: IC TRANSCEIVER FULL 4/4 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.6V ~ 3.6V
Number of Drivers/Receivers: 4/4
Protocol: MII, RMII
Supplier Device Package: 32-QFN (5x5)
Duplex: Full
Part Status: Active
на замовлення 52034 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 252.11 грн |
10+ | 159.23 грн |
25+ | 137.39 грн |
100+ | 105.89 грн |
LAN8720A-CP-TR |
Виробник: Microchip Technology
Description: IC TRANSCEIVER FULL 2/2 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.6V ~ 3.6V
Number of Drivers/Receivers: 2/2
Protocol: RMII
Supplier Device Package: 24-QFN (4x4)
Duplex: Full
Part Status: Active
Description: IC TRANSCEIVER FULL 2/2 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.6V ~ 3.6V
Number of Drivers/Receivers: 2/2
Protocol: RMII
Supplier Device Package: 24-QFN (4x4)
Duplex: Full
Part Status: Active
на замовлення 12212 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 102.71 грн |
25+ | 82.78 грн |
100+ | 80.76 грн |
MCP23S17T-E/SS |
Виробник: Microchip Technology
Description: IC XPNDR 10MHZ SPI 28SSOP
Packaging: Cut Tape (CT)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: SPI
Number of I/O: 16
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V ~ 5.5V
Clock Frequency: 10 MHz
Interrupt Output: Yes
Supplier Device Package: 28-SSOP
Current - Output Source/Sink: 25mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC XPNDR 10MHZ SPI 28SSOP
Packaging: Cut Tape (CT)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: SPI
Number of I/O: 16
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V ~ 5.5V
Clock Frequency: 10 MHz
Interrupt Output: Yes
Supplier Device Package: 28-SSOP
Current - Output Source/Sink: 25mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1037 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 124.5 грн |
25+ | 100.29 грн |
100+ | 90.86 грн |
MCP2515T-I/SO |
Виробник: Microchip Technology
Description: IC CAN CONTROLLER W/SPI 18SOIC
Packaging: Cut Tape (CT)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Function: Controller
Interface: SPI
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Current - Supply: 10mA
Protocol: CANbus
Standards: CAN 2.0
Supplier Device Package: 18-SOIC
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC CAN CONTROLLER W/SPI 18SOIC
Packaging: Cut Tape (CT)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Function: Controller
Interface: SPI
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Current - Supply: 10mA
Protocol: CANbus
Standards: CAN 2.0
Supplier Device Package: 18-SOIC
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 14318 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 170.41 грн |
25+ | 136.61 грн |
100+ | 124.51 грн |
MCP2515T-I/ST |
Виробник: Microchip Technology
Description: IC CAN CONTROLLER W/SPI 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Function: Controller
Interface: SPI
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Current - Supply: 10mA
Protocol: CANbus
Standards: CAN 2.0
Supplier Device Package: 20-TSSOP
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC CAN CONTROLLER W/SPI 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Function: Controller
Interface: SPI
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Current - Supply: 10mA
Protocol: CANbus
Standards: CAN 2.0
Supplier Device Package: 20-TSSOP
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 8394 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 186.75 грн |
25+ | 150.07 грн |
100+ | 136.62 грн |
MCP2551T-E/SN |
Виробник: Microchip Technology
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 200 mV
Duplex: Half
Part Status: Active
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 200 mV
Duplex: Half
Part Status: Active
на замовлення 39108 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 110.49 грн |
25+ | 88.84 грн |
100+ | 85.81 грн |