Технічний опис APTGT20TL601G Microchip Technology
Description: IGBT MODULE 600V 32A 62W SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Level Inverter, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A, NTC Thermistor: No, Supplier Device Package: SP1, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 32 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 62 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 1.1 pF @ 25 V.
Інші пропозиції APTGT20TL601G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTGT20TL601G | Виробник : MICROCHIP (MICROSEMI) |
 Category: IGBT modulesDescription: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 20A; SP1; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: three-level inverter; single-phase Max. off-state voltage: 0.6kV Collector current: 20A Case: SP1 Application: photovoltaics Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 40A Technology: Field Stop; Trench Mechanical mounting: screw кількість в упаковці: 19 шт |
товару немає в наявності |
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| APTGT20TL601G | Виробник : Microchip Technology |
Description: IGBT MODULE 600V 32A 62W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A NTC Thermistor: No Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 32 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 62 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1.1 pF @ 25 V |
товару немає в наявності |
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| APTGT20TL601G | Виробник : Microchip Technology |
IGBT Modules PM-IGBT-TFS-SP1 |
товару немає в наявності |
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| APTGT20TL601G | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 20A; SP1; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: three-level inverter; single-phase Max. off-state voltage: 0.6kV Collector current: 20A Case: SP1 Application: photovoltaics Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 40A Technology: Field Stop; Trench Mechanical mounting: screw |
товару немає в наявності |