Технічний опис APTGL120TDU120TPG Microchip Technology
Description: IGBT MODULE 1200V 140A 517W SP6P, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Triple, Dual - Common Source, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A, NTC Thermistor: Yes, Supplier Device Package: SP6-P, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 140 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 517 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V.
Інші пропозиції APTGL120TDU120TPG
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APTGL120TDU120TPG | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6 Technology: Field Stop; Trench Collector current: 120A Case: SP6P Gate-emitter voltage: ±20V Pulsed collector current: 200A Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Topology: IGBT x6; NTC thermistor Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 4 шт |
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APTGL120TDU120TPG | Виробник : Microchip Technology |
Description: IGBT MODULE 1200V 140A 517W SP6P Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Triple, Dual - Common Source Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: SP6-P IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 140 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 517 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V |
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APTGL120TDU120TPG | Виробник : Microchip Technology | IGBT Modules PM-IGBT-TFS-SP6P |
товар відсутній |
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APTGL120TDU120TPG | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6 Technology: Field Stop; Trench Collector current: 120A Case: SP6P Gate-emitter voltage: ±20V Pulsed collector current: 200A Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Topology: IGBT x6; NTC thermistor Mechanical mounting: screw Type of module: IGBT |
товар відсутній |