Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (347750) > Сторінка 792 з 5796
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ARF461AG | Microchip Technology |
 Description: RF MOSFET 50V TO247Packaging: Bulk Package / Case: TO-247-3 Current Rating (Amps): 25µA Frequency: 65MHz Configuration: N-Channel Power - Output: 150W Gain: 15dB Technology: MOSFET Supplier Device Package: TO-247 Part Status: Active Voltage - Rated: 1000 V Voltage - Test: 50 V |
товару немає в наявності |
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VRF2944MP | Microchip Technology |
Description: MOSFET RF N-CH 170V 50A M177 Packaging: Bulk Package / Case: M177 Current Rating (Amps): 50A Frequency: 30MHz Configuration: N-Channel Power - Output: 400W Gain: 25dB Technology: MOSFET Supplier Device Package: M177 Part Status: Active Voltage - Rated: 170 V Voltage - Test: 50 V Current - Test: 250 mA |
на замовлення 14 шт: термін постачання 21-31 дні (днів) |
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ARF461BG | Microchip Technology |
Description: RF MOSFET N-CH 1000V TO247 Packaging: Bulk Package / Case: TO-247-3 Current Rating (Amps): 25µA Frequency: 65MHz Configuration: N-Channel Power - Output: 150W Gain: 15dB Technology: MOSFET Supplier Device Package: TO-247 Part Status: Active Voltage - Rated: 1000 V Voltage - Test: 50 V |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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ARF463AG | Microchip Technology |
Description: RF PWR MOSFET 500V 9A TO-247 Packaging: Tube Package / Case: TO-247-3 Current Rating (Amps): 9A Frequency: 81.36MHz Configuration: N-Channel Power - Output: 100W Gain: 15dB Technology: MOSFET Supplier Device Package: TO-247 Part Status: Active Voltage - Rated: 500 V Voltage - Test: 125 V Current - Test: 50 mA |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
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ARF463AP1G | Microchip Technology |
Description: RF MOSFET 125V TO247 Packaging: Bulk Package / Case: TO-247-3 Current Rating (Amps): 9A Frequency: 81.36MHz Configuration: N-Channel Power - Output: 100W Gain: 15dB Technology: MOSFET Supplier Device Package: TO-247 Part Status: Active Voltage - Rated: 500 V Voltage - Test: 125 V |
на замовлення 26 шт: термін постачання 21-31 дні (днів) |
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ARF463BG | Microchip Technology |
Description: RF PWR MOSFET 500V 9A TO-247 |
товару немає в наявності |
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ARF463BP1G | Microchip Technology |
Description: RF MOSFET 125V TO247 Packaging: Bulk Package / Case: TO-247-3 Current Rating (Amps): 9A Frequency: 81.36MHz Configuration: N-Channel Power - Output: 100W Gain: 15dB Technology: MOSFET Supplier Device Package: TO-247 Part Status: Active Voltage - Rated: 500 V Voltage - Test: 125 V |
на замовлення 16 шт: термін постачання 21-31 дні (днів) |
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ARF465BG | Microchip Technology |
Description: RF PWR MOSFET 1200V 6A TO-247 |
товару немає в наявності |
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| ARF466FL | Microchip Technology |
Description: RF PWR MOSFET 1000V 13A |
товару немає в наявності |
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ARF477FL | Microchip Technology |
Description: RF PWR MOSFET 500V 10A Packaging: Bulk Current Rating (Amps): 15A Frequency: 65MHz Configuration: 2 N-Channel (Dual) Common Source Power - Output: 400W Gain: 16dB Technology: MOSFET Part Status: Active Voltage - Rated: 500 V Voltage - Test: 150 V |
на замовлення 42 шт: термін постачання 21-31 дні (днів) |
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| DRF1201 | Microchip Technology |
Description: IC PWR DRIVER N-CHANNEL 1:1 |
товару немає в наявності |
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| DRF1301 | Microchip Technology |
Description: IC PWR DRIVER N-CHANNEL 1:1 Packaging: Bulk Package / Case: 18-SMD Module Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Output Configuration: Low Side Rds On (Typ): 1Ohm Input Type: Inverting, Non-Inverting Voltage - Load: 10V ~ 15V Current - Output (Max): 15A Ratio - Input:Output: 1:1 |
товару немає в наявності |
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| VRF141G | Microchip Technology |
Description: RF PWR MOSFET 80V 40A DIE Packaging: Bulk Package / Case: SOT-540A Current Rating (Amps): 40A Frequency: 175MHz Configuration: N-Channel Power - Output: 300W Gain: 14dB Technology: MOSFET Part Status: Active Voltage - Rated: 80 V Voltage - Test: 28 V Current - Test: 500 mA |
товару немає в наявності |
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APT25GLQ120JCU2 | Microchip Technology |
Description: IGBT MOD 1200V 45A 170W SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis, Stud Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A NTC Thermistor: No Supplier Device Package: SOT-227 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 45 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 170 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1.43 nF @ 25 V |
товару немає в наявності |
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APT25GR120B | Microchip Technology |
Description: IGBT NPT 1200V 75A TO247 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A Supplier Device Package: TO-247 IGBT Type: NPT Td (on/off) @ 25°C: 16ns/122ns Switching Energy: 742µJ (on), 427µJ (off) Test Condition: 600V, 25A, 4.3Ohm, 15V Gate Charge: 203 nC Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 521 W |
на замовлення 178 шт: термін постачання 21-31 дні (днів) |
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APT25GR120S | Microchip Technology |
Description: IGBT NPT 1200V 75A D3PAK Packaging: Bulk Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A Supplier Device Package: D3Pak IGBT Type: NPT Td (on/off) @ 25°C: 16ns/122ns Switching Energy: 742µJ (on), 427µJ (off) Test Condition: 600V, 25A, 4.3Ohm, 15V Gate Charge: 203 nC Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 521 W |
товару немає в наявності |
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APT40GLQ120JCU2 | Microchip Technology |
Description: IGBT MOD 1200V 80A 312W SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis, Stud Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A NTC Thermistor: No Supplier Device Package: SOT-227 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 312 W Current - Collector Cutoff (Max): 25 µA Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V |
товару немає в наявності |
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APT60N60SCSG/TR | Microchip Technology |
Description: MOSFET N-CH 600V 60A D3PAK Packaging: Tape & Reel (TR) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V Power Dissipation (Max): 431W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 3mA Supplier Device Package: D3Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
товару немає в наявності |
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APT60S20SG/TR | Microchip Technology |
Description: DIODE SCHOTTKY 200V 75A D3PAK Packaging: Tape & Reel (TR) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Schottky Current - Average Rectified (Io): 75A Supplier Device Package: D3Pak Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V |
товару немає в наявності |
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| APTGLQ300H65G | Microchip Technology |
Description: IGBT MODULE 650V 600A 1000W SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Through Hole Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 1000 W Current - Collector Cutoff (Max): 300 µA Input Capacitance (Cies) @ Vce: 18.3 nF @ 25 V |
товару немає в наявності |
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| APTGLQ40DDA120CT3G | Microchip Technology |
Description: IGBT MODULE 1200V 75A 250W SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Through Hole Input: Standard Configuration: Dual Boost Chopper Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A NTC Thermistor: Yes Supplier Device Package: SP6 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 250 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V |
товару немає в наявності |
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| APTGLQ600A65T6G | Microchip Technology |
Description: IGBT MODULE 650V 1200A 2000W SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Through Hole Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: SP6 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 1200 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 2000 W Current - Collector Cutoff (Max): 600 µA Input Capacitance (Cies) @ Vce: 36.6 nF @ 25 V |
товару немає в наявності |
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| APTGLQ75H120T3G | Microchip Technology |
Description: IGBT MODULE 1200V 130A 385W SP1 |
товару немає в наявності |
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| APTGLQ75H65T1G | Microchip Technology |
Description: IGBT MODULE 650V 150A 250W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Through Hole Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 250 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V |
товару немає в наявності |
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| APTGT100TL170G | Microchip Technology |
Description: IGBT MODULE 1700V 150A 560W SP6 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 560 W Current - Collector Cutoff (Max): 350 µA Input Capacitance (Cies) @ Vce: 9 nF @ 25 V |
товару немає в наявності |
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| APTM100TA35SCTPG | Microchip Technology |
Description: MOSFET 6N-CH 1000V 22A SP6-P Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 390W Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 22A Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SP6-P |
товару немає в наявності |
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| APTGT50DH60T1G | Microchip Technology |
Description: IGBT MODULE 600V 80A 176W SP1 |
товару немає в наявності |
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| APTGT75DH120T3G | Microchip Technology |
Description: IGBT MODULE 1200V 110A 357W SP3 |
товару немає в наявності |
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| APTLGT300A1208G | Microchip Technology |
Description: MOD IGBT 1200V 440A LP8 Packaging: Bulk Package / Case: 6-PowerSIP Module Mounting Type: Through Hole Type: IGBT Configuration: Half Bridge Voltage - Isolation: 2500Vrms Current: 440 A Voltage: 1.2 kV |
товару немає в наявності |
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APT26M100JCU3 | Microchip Technology |
Description: MOSFET N-CH 1000V 26A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V Power Dissipation (Max): 543W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SOT-227 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V |
товару немає в наявності |
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| APTC60SKM24CT1G | Microchip Technology |
Description: MOSFET N-CH 600V 95A SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V Power Dissipation (Max): 462W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 5mA Supplier Device Package: SP1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V |
товару немає в наявності |
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| APTM100UM65SCAVG | Microchip Technology |
Description: MOSFET N-CH 1000V 145A SP6 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 145A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V Power Dissipation (Max): 3250W (Tc) Vgs(th) (Max) @ Id: 5V @ 20mA Supplier Device Package: SP6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V |
товару немає в наявності |
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APT60N60SCSG | Microchip Technology |
Description: MOSFET N-CH 600V 60A D3PAK Packaging: Bulk Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V Power Dissipation (Max): 431W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 3mA Supplier Device Package: D3Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
товару немає в наявності |
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APT14M100S | Microchip Technology |
Description: MOSFET N-CH 1000V 14A D3PAK Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 880mOhm @ 7A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3Pak Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V |
товару немає в наявності |
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APT77N60SC6 | Microchip Technology |
Description: MOSFET N-CH 600V 77A D3PAK |
товару немає в наявності |
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| ARF1505 | Microchip Technology |
Description: RF PWR MOSFET 300V 25A DIE |
товару немає в наявності |
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| ARF1511 | Microchip Technology |
Description: RF PWR MOSFET 500V 20A DIE |
товару немає в наявності |
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.jpg "ARF449AG") |
ARF449AG | Microchip Technology |
Description: RF PWR MOSFET 450V TO-247 |
товару немає в наявності |
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ARF449BG | Microchip Technology |
Description: RF PWR MOSFET 450V TO-247 |
товару немає в наявності |
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ARF465AG | Microchip Technology |
Description: RF PWR MOSFET 1200V 6A TO-247 Packaging: Bulk Package / Case: TO-247-3 Current Rating (Amps): 6A Frequency: 40.68MHz Configuration: N-Channel Power - Output: 150W Gain: 15dB Technology: MOSFET Supplier Device Package: TO-247 Part Status: Active Voltage - Rated: 1200 V Voltage - Test: 300 V |
на замовлення 29 шт: термін постачання 21-31 дні (днів) |
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| APTGLQ40HR120CT3G | Microchip Technology |
Description: IGBT MODULE 1200V 75A 250W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Through Hole Input: Standard Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 250 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V |
товару немає в наявності |
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ARF475FL | Microchip Technology |
Description: RF MOSFET 150V Packaging: Bulk Current Rating (Amps): 10A Frequency: 128MHz Configuration: 2 N-Channel (Dual) Common Source Power - Output: 900W Gain: 16dB Technology: MOSFET Part Status: Active Voltage - Rated: 500 V Voltage - Test: 150 V Current - Test: 15 mA |
на замовлення 14 шт: термін постачання 21-31 дні (днів) |
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APT94N65B2C6 | Microchip Technology |
Description: MOSFET N-CH 650V 95A T-MAX Packaging: Bulk Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 35.2A, 10V Power Dissipation (Max): 833W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 3.5mA Supplier Device Package: T-MAX™ [B2] Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8140 pF @ 25 V |
товару немає в наявності |
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| APTGLQ40H120T1G | Microchip Technology |
Description: IGBT MODULE 1200V 75A 250W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Through Hole Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 250 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V |
товару немає в наявності |
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| APTC90SKM60CT1G | Microchip Technology |
Description: MOSFET N-CH 900V 59A SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V Power Dissipation (Max): 462W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 6mA Supplier Device Package: SP1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 100 V |
товару немає в наявності |
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APTM120DA30CT1G | Microchip Technology |
Description: MOSFET N-CH 1200V 31A SP1 |
товару немає в наявності |
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| ARF1519 | Microchip Technology |
Description: RF PWR MOSFET 1000V 20A DIE |
товару немає в наявності |
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APTGLQ100A65T1G | Microchip Technology |
Description: IGBT MODULE 650V 200A 350W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Through Hole Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 350 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 6 nF @ 25 V |
товару немає в наявності |
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1PMT4100Ce3/TR13 | Microchip Technology |
Description: DIODE ZENER 7.5V 1W DO216 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V |
товару немає в наявності |
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1PMT4100Ce3/TR7 | Microchip Technology |
Description: DIODE ZENER 7.5V 1W DO216 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V |
товару немає в наявності |
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1PMT4100e3/TR13 | Microchip Technology |
Description: DIODE ZENER 7.5V 1W DO216 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V |
товару немає в наявності |
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1PMT4100E3/TR7 | Microchip Technology |
Description: DIODE ZENER 7.5V 1W DO216 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V |
товару немає в наявності |
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1PMT4104/TR13 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO216 |
товару немає в наявності |
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1PMT4104/TR7 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO216 |
товару немає в наявності |
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1PMT4104C/TR13 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO216 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V |
товару немає в наявності |
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1PMT4104C/TR7 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO216 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V |
товару немає в наявності |
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1PMT4104Ce3/TR13 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO216 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V |
товару немає в наявності |
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1PMT4104Ce3/TR7 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO216 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V |
товару немає в наявності |
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1PMT4104e3/TR13 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO216 |
товару немає в наявності |
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1PMT4104e3/TR7 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO216 |
товару немає в наявності |
| ARF461AG |
|
Виробник: Microchip Technology
Description: RF MOSFET 50V TO247
Packaging: Bulk
Package / Case: TO-247-3
Current Rating (Amps): 25µA
Frequency: 65MHz
Configuration: N-Channel
Power - Output: 150W
Gain: 15dB
Technology: MOSFET
Supplier Device Package: TO-247
Part Status: Active
Voltage - Rated: 1000 V
Voltage - Test: 50 V
Description: RF MOSFET 50V TO247
Packaging: Bulk
Package / Case: TO-247-3
Current Rating (Amps): 25µA
Frequency: 65MHz
Configuration: N-Channel
Power - Output: 150W
Gain: 15dB
Technology: MOSFET
Supplier Device Package: TO-247
Part Status: Active
Voltage - Rated: 1000 V
Voltage - Test: 50 V
товару немає в наявності
| VRF2944MP |
|
Виробник: Microchip Technology
Description: MOSFET RF N-CH 170V 50A M177
Packaging: Bulk
Package / Case: M177
Current Rating (Amps): 50A
Frequency: 30MHz
Configuration: N-Channel
Power - Output: 400W
Gain: 25dB
Technology: MOSFET
Supplier Device Package: M177
Part Status: Active
Voltage - Rated: 170 V
Voltage - Test: 50 V
Current - Test: 250 mA
Description: MOSFET RF N-CH 170V 50A M177
Packaging: Bulk
Package / Case: M177
Current Rating (Amps): 50A
Frequency: 30MHz
Configuration: N-Channel
Power - Output: 400W
Gain: 25dB
Technology: MOSFET
Supplier Device Package: M177
Part Status: Active
Voltage - Rated: 170 V
Voltage - Test: 50 V
Current - Test: 250 mA
на замовлення 14 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 30618.2 грн |
| ARF461BG |
|
Виробник: Microchip Technology
Description: RF MOSFET N-CH 1000V TO247
Packaging: Bulk
Package / Case: TO-247-3
Current Rating (Amps): 25µA
Frequency: 65MHz
Configuration: N-Channel
Power - Output: 150W
Gain: 15dB
Technology: MOSFET
Supplier Device Package: TO-247
Part Status: Active
Voltage - Rated: 1000 V
Voltage - Test: 50 V
Description: RF MOSFET N-CH 1000V TO247
Packaging: Bulk
Package / Case: TO-247-3
Current Rating (Amps): 25µA
Frequency: 65MHz
Configuration: N-Channel
Power - Output: 150W
Gain: 15dB
Technology: MOSFET
Supplier Device Package: TO-247
Part Status: Active
Voltage - Rated: 1000 V
Voltage - Test: 50 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4546.44 грн |
| ARF463AG |
|
Виробник: Microchip Technology
Description: RF PWR MOSFET 500V 9A TO-247
Packaging: Tube
Package / Case: TO-247-3
Current Rating (Amps): 9A
Frequency: 81.36MHz
Configuration: N-Channel
Power - Output: 100W
Gain: 15dB
Technology: MOSFET
Supplier Device Package: TO-247
Part Status: Active
Voltage - Rated: 500 V
Voltage - Test: 125 V
Current - Test: 50 mA
Description: RF PWR MOSFET 500V 9A TO-247
Packaging: Tube
Package / Case: TO-247-3
Current Rating (Amps): 9A
Frequency: 81.36MHz
Configuration: N-Channel
Power - Output: 100W
Gain: 15dB
Technology: MOSFET
Supplier Device Package: TO-247
Part Status: Active
Voltage - Rated: 500 V
Voltage - Test: 125 V
Current - Test: 50 mA
на замовлення 11 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3179.9 грн |
| ARF463AP1G |
|
Виробник: Microchip Technology
Description: RF MOSFET 125V TO247
Packaging: Bulk
Package / Case: TO-247-3
Current Rating (Amps): 9A
Frequency: 81.36MHz
Configuration: N-Channel
Power - Output: 100W
Gain: 15dB
Technology: MOSFET
Supplier Device Package: TO-247
Part Status: Active
Voltage - Rated: 500 V
Voltage - Test: 125 V
Description: RF MOSFET 125V TO247
Packaging: Bulk
Package / Case: TO-247-3
Current Rating (Amps): 9A
Frequency: 81.36MHz
Configuration: N-Channel
Power - Output: 100W
Gain: 15dB
Technology: MOSFET
Supplier Device Package: TO-247
Part Status: Active
Voltage - Rated: 500 V
Voltage - Test: 125 V
на замовлення 26 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3159.93 грн |
| ARF463BG |
|
Виробник: Microchip Technology
Description: RF PWR MOSFET 500V 9A TO-247
Description: RF PWR MOSFET 500V 9A TO-247
товару немає в наявності
| ARF463BP1G |
|
Виробник: Microchip Technology
Description: RF MOSFET 125V TO247
Packaging: Bulk
Package / Case: TO-247-3
Current Rating (Amps): 9A
Frequency: 81.36MHz
Configuration: N-Channel
Power - Output: 100W
Gain: 15dB
Technology: MOSFET
Supplier Device Package: TO-247
Part Status: Active
Voltage - Rated: 500 V
Voltage - Test: 125 V
Description: RF MOSFET 125V TO247
Packaging: Bulk
Package / Case: TO-247-3
Current Rating (Amps): 9A
Frequency: 81.36MHz
Configuration: N-Channel
Power - Output: 100W
Gain: 15dB
Technology: MOSFET
Supplier Device Package: TO-247
Part Status: Active
Voltage - Rated: 500 V
Voltage - Test: 125 V
на замовлення 16 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3159.93 грн |
| ARF465BG |
|
Виробник: Microchip Technology
Description: RF PWR MOSFET 1200V 6A TO-247
Description: RF PWR MOSFET 1200V 6A TO-247
товару немає в наявності
| ARF466FL |
|
Виробник: Microchip Technology
Description: RF PWR MOSFET 1000V 13A
Description: RF PWR MOSFET 1000V 13A
товару немає в наявності
| ARF477FL |
|
Виробник: Microchip Technology
Description: RF PWR MOSFET 500V 10A
Packaging: Bulk
Current Rating (Amps): 15A
Frequency: 65MHz
Configuration: 2 N-Channel (Dual) Common Source
Power - Output: 400W
Gain: 16dB
Technology: MOSFET
Part Status: Active
Voltage - Rated: 500 V
Voltage - Test: 150 V
Description: RF PWR MOSFET 500V 10A
Packaging: Bulk
Current Rating (Amps): 15A
Frequency: 65MHz
Configuration: 2 N-Channel (Dual) Common Source
Power - Output: 400W
Gain: 16dB
Technology: MOSFET
Part Status: Active
Voltage - Rated: 500 V
Voltage - Test: 150 V
на замовлення 42 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 11723.08 грн |
| DRF1201 |
|
Виробник: Microchip Technology
Description: IC PWR DRIVER N-CHANNEL 1:1
Description: IC PWR DRIVER N-CHANNEL 1:1
товару немає в наявності
| DRF1301 |
|
Виробник: Microchip Technology
Description: IC PWR DRIVER N-CHANNEL 1:1
Packaging: Bulk
Package / Case: 18-SMD Module
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Input Type: Inverting, Non-Inverting
Voltage - Load: 10V ~ 15V
Current - Output (Max): 15A
Ratio - Input:Output: 1:1
Description: IC PWR DRIVER N-CHANNEL 1:1
Packaging: Bulk
Package / Case: 18-SMD Module
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Input Type: Inverting, Non-Inverting
Voltage - Load: 10V ~ 15V
Current - Output (Max): 15A
Ratio - Input:Output: 1:1
товару немає в наявності
| VRF141G |
|
Виробник: Microchip Technology
Description: RF PWR MOSFET 80V 40A DIE
Packaging: Bulk
Package / Case: SOT-540A
Current Rating (Amps): 40A
Frequency: 175MHz
Configuration: N-Channel
Power - Output: 300W
Gain: 14dB
Technology: MOSFET
Part Status: Active
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 500 mA
Description: RF PWR MOSFET 80V 40A DIE
Packaging: Bulk
Package / Case: SOT-540A
Current Rating (Amps): 40A
Frequency: 175MHz
Configuration: N-Channel
Power - Output: 300W
Gain: 14dB
Technology: MOSFET
Part Status: Active
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 500 mA
товару немає в наявності
| APT25GLQ120JCU2 |
|
Виробник: Microchip Technology
Description: IGBT MOD 1200V 45A 170W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 170 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.43 nF @ 25 V
Description: IGBT MOD 1200V 45A 170W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 170 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.43 nF @ 25 V
товару немає в наявності
| APT25GR120B |
|
Виробник: Microchip Technology
Description: IGBT NPT 1200V 75A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: TO-247
IGBT Type: NPT
Td (on/off) @ 25°C: 16ns/122ns
Switching Energy: 742µJ (on), 427µJ (off)
Test Condition: 600V, 25A, 4.3Ohm, 15V
Gate Charge: 203 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 521 W
Description: IGBT NPT 1200V 75A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: TO-247
IGBT Type: NPT
Td (on/off) @ 25°C: 16ns/122ns
Switching Energy: 742µJ (on), 427µJ (off)
Test Condition: 600V, 25A, 4.3Ohm, 15V
Gate Charge: 203 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 521 W
на замовлення 178 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 391.54 грн |
| APT25GR120S |
|
Виробник: Microchip Technology
Description: IGBT NPT 1200V 75A D3PAK
Packaging: Bulk
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: D3Pak
IGBT Type: NPT
Td (on/off) @ 25°C: 16ns/122ns
Switching Energy: 742µJ (on), 427µJ (off)
Test Condition: 600V, 25A, 4.3Ohm, 15V
Gate Charge: 203 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 521 W
Description: IGBT NPT 1200V 75A D3PAK
Packaging: Bulk
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: D3Pak
IGBT Type: NPT
Td (on/off) @ 25°C: 16ns/122ns
Switching Energy: 742µJ (on), 427µJ (off)
Test Condition: 600V, 25A, 4.3Ohm, 15V
Gate Charge: 203 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 521 W
товару немає в наявності
| APT40GLQ120JCU2 |
|
Виробник: Microchip Technology
Description: IGBT MOD 1200V 80A 312W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V
Description: IGBT MOD 1200V 80A 312W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V
товару немає в наявності
| APT60N60SCSG/TR |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 60A D3PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 600V 60A D3PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товару немає в наявності
| APT60S20SG/TR |
|
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 200V 75A D3PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Current - Average Rectified (Io): 75A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Description: DIODE SCHOTTKY 200V 75A D3PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Current - Average Rectified (Io): 75A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
товару немає в наявності
| APTGLQ300H65G |
|
Виробник: Microchip Technology
Description: IGBT MODULE 650V 600A 1000W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Through Hole
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 18.3 nF @ 25 V
Description: IGBT MODULE 650V 600A 1000W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Through Hole
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 18.3 nF @ 25 V
товару немає в наявності
| APTGLQ40DDA120CT3G |
|
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 75A 250W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Through Hole
Input: Standard
Configuration: Dual Boost Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V
Description: IGBT MODULE 1200V 75A 250W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Through Hole
Input: Standard
Configuration: Dual Boost Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V
товару немає в наявності
| APTGLQ600A65T6G |
|
Виробник: Microchip Technology
Description: IGBT MODULE 650V 1200A 2000W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 36.6 nF @ 25 V
Description: IGBT MODULE 650V 1200A 2000W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 36.6 nF @ 25 V
товару немає в наявності
| APTGLQ75H120T3G |
|
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 130A 385W SP1
Description: IGBT MODULE 1200V 130A 385W SP1
товару немає в наявності
| APTGLQ75H65T1G |
|
Виробник: Microchip Technology
Description: IGBT MODULE 650V 150A 250W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Through Hole
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Description: IGBT MODULE 650V 150A 250W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Through Hole
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
товару немає в наявності
| APTGT100TL170G |
|
Виробник: Microchip Technology
Description: IGBT MODULE 1700V 150A 560W SP6
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 560 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Description: IGBT MODULE 1700V 150A 560W SP6
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 560 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
товару немає в наявності
| APTM100TA35SCTPG |
|
Виробник: Microchip Technology
Description: MOSFET 6N-CH 1000V 22A SP6-P
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 22A
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP6-P
Description: MOSFET 6N-CH 1000V 22A SP6-P
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 22A
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP6-P
товару немає в наявності
| APTGT50DH60T1G |
|
Виробник: Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP1
Description: IGBT MODULE 600V 80A 176W SP1
товару немає в наявності
| APTGT75DH120T3G |
|
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 110A 357W SP3
Description: IGBT MODULE 1200V 110A 357W SP3
товару немає в наявності
| APTLGT300A1208G |
|
Виробник: Microchip Technology
Description: MOD IGBT 1200V 440A LP8
Packaging: Bulk
Package / Case: 6-PowerSIP Module
Mounting Type: Through Hole
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 2500Vrms
Current: 440 A
Voltage: 1.2 kV
Description: MOD IGBT 1200V 440A LP8
Packaging: Bulk
Package / Case: 6-PowerSIP Module
Mounting Type: Through Hole
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 2500Vrms
Current: 440 A
Voltage: 1.2 kV
товару немає в наявності
| APT26M100JCU3 |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 26A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V
Description: MOSFET N-CH 1000V 26A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V
товару немає в наявності
| APTC60SKM24CT1G |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 95A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Supplier Device Package: SP1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V
Description: MOSFET N-CH 600V 95A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Supplier Device Package: SP1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V
товару немає в наявності
| APTM100UM65SCAVG |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 145A SP6
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V
Power Dissipation (Max): 3250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 20mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V
Description: MOSFET N-CH 1000V 145A SP6
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V
Power Dissipation (Max): 3250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 20mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V
товару немає в наявності
| APT60N60SCSG |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 60A D3PAK
Packaging: Bulk
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 600V 60A D3PAK
Packaging: Bulk
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товару немає в наявності
| APT14M100S |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 14A D3PAK
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 880mOhm @ 7A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V
Description: MOSFET N-CH 1000V 14A D3PAK
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 880mOhm @ 7A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V
товару немає в наявності
| APT77N60SC6 |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 77A D3PAK
Description: MOSFET N-CH 600V 77A D3PAK
товару немає в наявності
| ARF1505 |
|
Виробник: Microchip Technology
Description: RF PWR MOSFET 300V 25A DIE
Description: RF PWR MOSFET 300V 25A DIE
товару немає в наявності
| ARF1511 |
|
Виробник: Microchip Technology
Description: RF PWR MOSFET 500V 20A DIE
Description: RF PWR MOSFET 500V 20A DIE
товару немає в наявності
| ARF449AG |
|
Виробник: Microchip Technology
Description: RF PWR MOSFET 450V TO-247
Description: RF PWR MOSFET 450V TO-247
товару немає в наявності
| ARF449BG |
|
Виробник: Microchip Technology
Description: RF PWR MOSFET 450V TO-247
Description: RF PWR MOSFET 450V TO-247
товару немає в наявності
| ARF465AG |
|
Виробник: Microchip Technology
Description: RF PWR MOSFET 1200V 6A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Current Rating (Amps): 6A
Frequency: 40.68MHz
Configuration: N-Channel
Power - Output: 150W
Gain: 15dB
Technology: MOSFET
Supplier Device Package: TO-247
Part Status: Active
Voltage - Rated: 1200 V
Voltage - Test: 300 V
Description: RF PWR MOSFET 1200V 6A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Current Rating (Amps): 6A
Frequency: 40.68MHz
Configuration: N-Channel
Power - Output: 150W
Gain: 15dB
Technology: MOSFET
Supplier Device Package: TO-247
Part Status: Active
Voltage - Rated: 1200 V
Voltage - Test: 300 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4746.04 грн |
| APTGLQ40HR120CT3G |
|
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 75A 250W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Through Hole
Input: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V
Description: IGBT MODULE 1200V 75A 250W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Through Hole
Input: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V
товару немає в наявності
| ARF475FL |
|
Виробник: Microchip Technology
Description: RF MOSFET 150V
Packaging: Bulk
Current Rating (Amps): 10A
Frequency: 128MHz
Configuration: 2 N-Channel (Dual) Common Source
Power - Output: 900W
Gain: 16dB
Technology: MOSFET
Part Status: Active
Voltage - Rated: 500 V
Voltage - Test: 150 V
Current - Test: 15 mA
Description: RF MOSFET 150V
Packaging: Bulk
Current Rating (Amps): 10A
Frequency: 128MHz
Configuration: 2 N-Channel (Dual) Common Source
Power - Output: 900W
Gain: 16dB
Technology: MOSFET
Part Status: Active
Voltage - Rated: 500 V
Voltage - Test: 150 V
Current - Test: 15 mA
на замовлення 14 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 10527.74 грн |
| APT94N65B2C6 |
Виробник: Microchip Technology
Description: MOSFET N-CH 650V 95A T-MAX
Packaging: Bulk
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 35.2A, 10V
Power Dissipation (Max): 833W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8140 pF @ 25 V
Description: MOSFET N-CH 650V 95A T-MAX
Packaging: Bulk
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 35.2A, 10V
Power Dissipation (Max): 833W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8140 pF @ 25 V
товару немає в наявності
| APTGLQ40H120T1G |
|
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 75A 250W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Through Hole
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V
Description: IGBT MODULE 1200V 75A 250W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Through Hole
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V
товару немає в наявності
| APTC90SKM60CT1G |
Виробник: Microchip Technology
Description: MOSFET N-CH 900V 59A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Supplier Device Package: SP1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 100 V
Description: MOSFET N-CH 900V 59A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Supplier Device Package: SP1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 100 V
товару немає в наявності
| APTM120DA30CT1G |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 1200V 31A SP1
Description: MOSFET N-CH 1200V 31A SP1
товару немає в наявності
| ARF1519 |
|
Виробник: Microchip Technology
Description: RF PWR MOSFET 1000V 20A DIE
Description: RF PWR MOSFET 1000V 20A DIE
товару немає в наявності
| APTGLQ100A65T1G |
Виробник: Microchip Technology
Description: IGBT MODULE 650V 200A 350W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
Description: IGBT MODULE 650V 200A 350W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
товару немає в наявності
| 1PMT4100Ce3/TR13 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 7.5V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V
Description: DIODE ZENER 7.5V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V
товару немає в наявності
| 1PMT4100Ce3/TR7 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 7.5V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V
Description: DIODE ZENER 7.5V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V
товару немає в наявності
| 1PMT4100e3/TR13 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 7.5V 1W DO216
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V
Description: DIODE ZENER 7.5V 1W DO216
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V
товару немає в наявності
| 1PMT4100E3/TR7 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 7.5V 1W DO216
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V
Description: DIODE ZENER 7.5V 1W DO216
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V
товару немає в наявності
| 1PMT4104/TR13 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 10V 1W DO216
Description: DIODE ZENER 10V 1W DO216
товару немає в наявності
| 1PMT4104/TR7 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 10V 1W DO216
Description: DIODE ZENER 10V 1W DO216
товару немає в наявності
| 1PMT4104C/TR13 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 10V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V
Description: DIODE ZENER 10V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V
товару немає в наявності
| 1PMT4104C/TR7 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 10V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V
Description: DIODE ZENER 10V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V
товару немає в наявності
| 1PMT4104Ce3/TR13 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 10V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V
Description: DIODE ZENER 10V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V
товару немає в наявності
| 1PMT4104Ce3/TR7 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 10V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V
Description: DIODE ZENER 10V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V
товару немає в наявності
| 1PMT4104e3/TR13 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 10V 1W DO216
Description: DIODE ZENER 10V 1W DO216
товару немає в наявності
| 1PMT4104e3/TR7 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 10V 1W DO216
Description: DIODE ZENER 10V 1W DO216
товару немає в наявності