Технічний опис APTGL60H120T3G Microchip Technology
Description: IGBT MODULE 1200V 80A 280W SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: SP3, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 280 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 2.77 nF @ 25 V.
Інші пропозиції APTGL60H120T3G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APTGL60H120T3G | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Type of module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 60A Case: SP3F Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Field Stop; Trench Mechanical mounting: screw кількість в упаковці: 12 шт |
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APTGL60H120T3G | Виробник : MICROSEMI |
Full bridge Trench + Field Stop IGBT4 Power module APTGL60 кількість в упаковці: 1 шт |
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APTGL60H120T3G | Виробник : Microchip Technology |
Description: IGBT MODULE 1200V 80A 280W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 280 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 2.77 nF @ 25 V |
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APTGL60H120T3G | Виробник : Microchip / Microsemi | IGBT Modules CC3142 |
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APTGL60H120T3G | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Type of module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 60A Case: SP3F Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Field Stop; Trench Mechanical mounting: screw |
товар відсутній |