APTGL90DA120T1G MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Gate-emitter voltage: ±20V
Collector current: 90A
Pulsed collector current: 150A
Application: motors
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: boost chopper; NTC thermistor
Case: SP1
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
кількість в упаковці: 19 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Gate-emitter voltage: ±20V
Collector current: 90A
Pulsed collector current: 150A
Application: motors
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: boost chopper; NTC thermistor
Case: SP1
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
кількість в упаковці: 19 шт
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Технічний опис APTGL90DA120T1G MICROCHIP (MICROSEMI)
Description: IGBT MODULE 1200V 110A 385W SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A, NTC Thermistor: Yes, Supplier Device Package: SP1, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 110 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 385 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V.
Інші пропозиції APTGL90DA120T1G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APTGL90DA120T1G | Виробник : Microchip Technology |
Description: IGBT MODULE 1200V 110A 385W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 110 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 385 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V |
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APTGL90DA120T1G | Виробник : Microsemi | IGBT Modules Power Module - IGBT |
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APTGL90DA120T1G | Виробник : Microchip Technology | IGBT Modules DOR CC8109 |
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APTGL90DA120T1G | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor Gate-emitter voltage: ±20V Collector current: 90A Pulsed collector current: 150A Application: motors Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: boost chopper; NTC thermistor Case: SP1 Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor |
товар відсутній |