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IR3895MTR1PBF IR3895MTR1PBF Infineon Technologies ir3895m.pdf?fileId=5546d462533600a4015355d5dd261811 Description: IC REG BUCK ADJ 16A 16PQFN
товар відсутній
IR3897MTR1PBF IR3897MTR1PBF Infineon Technologies ir3897m.pdf?fileId=5546d462533600a4015355d5e3731813 Description: IC REG BUCK ADJUSTABLE 4A 16PQFN
товар відсутній
IRF7342D2TRPBF IRF7342D2TRPBF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET P-CH 55V 3.4A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
FET Feature: Schottky Diode (Isolated)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
товар відсутній
IRLR3110ZTRPBF IRLR3110ZTRPBF Infineon Technologies irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a Description: MOSFET N-CH 100V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 38A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 25 V
на замовлення 11736 шт:
термін постачання 21-31 дні (днів)
3+126.21 грн
10+ 100.52 грн
100+ 79.99 грн
500+ 63.52 грн
1000+ 53.9 грн
Мінімальне замовлення: 3
IRLR3705ZTRPBF IRLR3705ZTRPBF Infineon Technologies irlr3705zpbf.pdf?fileId=5546d462533600a40153566d2d17269d Description: MOSFET N-CH 55V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 42A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
на замовлення 2988 шт:
термін постачання 21-31 дні (днів)
3+114.81 грн
10+ 92.03 грн
100+ 73.23 грн
500+ 58.15 грн
1000+ 49.34 грн
Мінімальне замовлення: 3
IRF540NSTRRPBF IRF540NSTRRPBF Infineon Technologies irf540nspbf.pdf?fileId=5546d462533600a4015355e3a72819a3 description Description: MOSFET N-CH 100V 33A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
товар відсутній
IR25600SPBF IR25600SPBF Infineon Technologies ir25600.pdf?fileId=5546d462533600a4015355c9bcd116e7 Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
товар відсутній
IR25601STRPBF IR25601STRPBF Infineon Technologies Infineon-IR25601S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a762d794ab8 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 200ns, 100ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 60mA, 130mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+50.87 грн
Мінімальне замовлення: 2500
IR25602STRPBF IR25602STRPBF Infineon Technologies ir25602.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+38.71 грн
Мінімальне замовлення: 2500
IR25603SPBF IR25603SPBF Infineon Technologies ir25603.pdf?fileId=5546d462533600a4015355c9e46716ef Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 180mA, 260mA
DigiKey Programmable: Not Verified
товар відсутній
IR25604STRPBF IR25604STRPBF Infineon Technologies Infineon-IR25604S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a88c8814ac5 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+38.71 грн
Мінімальне замовлення: 2500
IR25606STRPBF IR25606STRPBF Infineon Technologies Infineon-IR25606S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a88cfb54ac8 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+43.79 грн
Мінімальне замовлення: 2500
IR25607SPbF IR25607SPbF Infineon Technologies Infineon-IR25607S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a9172b34acb Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
на замовлення 605 шт:
термін постачання 21-31 дні (днів)
2+276.75 грн
10+ 239.19 грн
45+ 226.07 грн
135+ 183.87 грн
270+ 174.44 грн
540+ 156.52 грн
Мінімальне замовлення: 2
IR4301MTRPBF IR4301MTRPBF Infineon Technologies ir4301.pdf?fileId=5546d462533600a4015355d5fc691819 Description: IC AMP CLASS D MONO 160W PQFN22
Features: Depop, Differential Inputs
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerVQFN
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Voltage - Supply: 10V ~ 15V
Max Output Power x Channels @ Load: 160W x 1 @ 4Ohm
Supplier Device Package: 22-PQFN (5x6)
товар відсутній
IR4302MTRPBF IR4302MTRPBF Infineon Technologies ir4302.pdf?fileId=5546d462533600a4015355d602a9181d Description: IC AMP CLASS D STEREO 130W 44QFN
Features: Depop, Differential Inputs
Packaging: Tape & Reel (TR)
Package / Case: 44-PowerVFQFN
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Voltage - Supply: 10V ~ 15V
Max Output Power x Channels @ Load: 130W x 2 @ 4Ohm
Supplier Device Package: 44-PQFN (7x7)
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+245 грн
Мінімальне замовлення: 3000
IR25601STRPBF IR25601STRPBF Infineon Technologies Infineon-IR25601S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a762d794ab8 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 200ns, 100ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 60mA, 130mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2996 шт:
термін постачання 21-31 дні (днів)
3+111 грн
10+ 96.2 грн
25+ 90.73 грн
100+ 72.54 грн
250+ 68.11 грн
500+ 59.6 грн
1000+ 48.57 грн
Мінімальне замовлення: 3
IR25602STRPBF IR25602STRPBF Infineon Technologies ir25602.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 11028 шт:
термін постачання 21-31 дні (днів)
3+103.4 грн
10+ 88.81 грн
25+ 84.34 грн
100+ 65.01 грн
250+ 60.77 грн
500+ 53.71 грн
1000+ 41.7 грн
Мінімальне замовлення: 3
IR25604STRPBF IR25604STRPBF Infineon Technologies Infineon-IR25604S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a88c8814ac5 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2945 шт:
термін постачання 21-31 дні (днів)
3+103.4 грн
10+ 88.81 грн
25+ 84.34 грн
100+ 65.01 грн
250+ 60.77 грн
500+ 53.71 грн
1000+ 41.7 грн
Мінімальне замовлення: 3
IR25606STRPBF IR25606STRPBF Infineon Technologies Infineon-IR25606S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a88cfb54ac8 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 6949 шт:
термін постачання 21-31 дні (днів)
3+103.4 грн
10+ 88.81 грн
25+ 84.34 грн
100+ 65.01 грн
250+ 60.77 грн
500+ 53.71 грн
1000+ 41.7 грн
Мінімальне замовлення: 3
IR4301MTRPBF IR4301MTRPBF Infineon Technologies ir4301.pdf?fileId=5546d462533600a4015355d5fc691819 Description: IC AMP CLASS D MONO 160W PQFN22
Features: Depop, Differential Inputs
Packaging: Cut Tape (CT)
Package / Case: 22-PowerVQFN
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Voltage - Supply: 10V ~ 15V
Max Output Power x Channels @ Load: 160W x 1 @ 4Ohm
Supplier Device Package: 22-PQFN (5x6)
на замовлення 3632 шт:
термін постачання 21-31 дні (днів)
2+280.55 грн
10+ 242.71 грн
25+ 229.45 грн
100+ 186.62 грн
250+ 177.05 грн
500+ 158.87 грн
1000+ 131.79 грн
Мінімальне замовлення: 2
IR4302MTRPBF IR4302MTRPBF Infineon Technologies ir4302.pdf?fileId=5546d462533600a4015355d602a9181d Description: IC AMP CLASS D STEREO 130W 44QFN
Features: Depop, Differential Inputs
Packaging: Cut Tape (CT)
Package / Case: 44-PowerVFQFN
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Voltage - Supply: 10V ~ 15V
Max Output Power x Channels @ Load: 130W x 2 @ 4Ohm
Supplier Device Package: 44-PQFN (7x7)
Part Status: Active
на замовлення 8311 шт:
термін постачання 21-31 дні (днів)
1+330.73 грн
10+ 288.1 грн
25+ 274.73 грн
100+ 223.85 грн
250+ 221.41 грн
CY8CMBR2110-24LQXI CY8CMBR2110-24LQXI Infineon Technologies Infineon-CY8CMBR2110_CapSense_Express_10-Button_Controller.-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec7e3463fc5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MBR 10 BUTTON 10 LED 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 3.4mA
Number of Inputs: Up to 10
Supplier Device Package: 32-QFN (5x5)
Proximity Detection: No
LED Driver Channels: Up to 10
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 980 шт:
термін постачання 21-31 дні (днів)
1+354.3 грн
10+ 306.48 грн
25+ 289.75 грн
80+ 235.66 грн
230+ 223.58 грн
490+ 200.62 грн
980+ 166.42 грн
IKD03N60RF IKD03N60RF Infineon Technologies Infineon-IKD03N60RF_-DS-v02_05-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433c5c92fb013c5d3978350068 Description: IGBT 600V 5A 53.6W TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 10ns/128ns
Switching Energy: 90µJ
Test Condition: 400V, 2.5A, 68Ohm, 15V
Gate Charge: 17.1 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 7.5 A
Power - Max: 53.6 W
товар відсутній
IKD10N60RFATMA1 IKD10N60RFATMA1 Infineon Technologies DS_IKD10N60RF_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304335c2937a0135e7ea2d2d7a72 Description: IGBT 600V 20A 150W PG-TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/168ns
Switching Energy: 190µJ (on), 160µJ (off)
Test Condition: 400V, 10A, 26Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 150 W
на замовлення 2480 шт:
термін постачання 21-31 дні (днів)
3+114.05 грн
10+ 89.69 грн
100+ 69.76 грн
500+ 55.49 грн
1000+ 45.2 грн
Мінімальне замовлення: 3
IKD10N60RFATMA1 IKD10N60RFATMA1 Infineon Technologies DS_IKD10N60RF_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304335c2937a0135e7ea2d2d7a72 Description: IGBT 600V 20A 150W PG-TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/168ns
Switching Energy: 190µJ (on), 160µJ (off)
Test Condition: 400V, 10A, 26Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 150 W
товар відсутній
IPI020N06N IPI020N06N Infineon Technologies IPI020N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372b6b23064900 Description: MOSFET N-CH 60V 29A TO262-3
на замовлення 33 шт:
термін постачання 21-31 дні (днів)
IPI029N06NAKSA1 IPI029N06NAKSA1 Infineon Technologies IPI029N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372bab38f54926 Description: MOSFET N-CH 60V 24A/100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 75µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
2+159.66 грн
Мінімальне замовлення: 2
IPP060N06NAKSA1 IPP060N06NAKSA1 Infineon Technologies IPP060N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372c06d9d7498a Description: MOSFET N-CH 60V 17A/45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 45A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
на замовлення 494 шт:
термін постачання 21-31 дні (днів)
3+109.48 грн
50+ 84.28 грн
100+ 69.34 грн
Мінімальне замовлення: 3
BSC014N04LSATMA1 BSC014N04LSATMA1 Infineon Technologies DS_BSC014N04LS_2_1.PDF?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc16013552e99a8147f1 Description: MOSFET N-CH 40V 32/100A SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SuperSO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
на замовлення 14749 шт:
термін постачання 21-31 дні (днів)
3+117.09 грн
10+ 93.64 грн
100+ 74.5 грн
500+ 59.16 грн
1000+ 50.2 грн
2000+ 47.69 грн
Мінімальне замовлення: 3
BSZ023N04LSATMA1 BSZ023N04LSATMA1 Infineon Technologies BSZ023N04LS.pdf Description: MOSFET N-CH 40V 22A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 20 V
товар відсутній
IPB010N06NATMA1 IPB010N06NATMA1 Infineon Technologies IPB010N06N_Rev2+0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc1601355341f17a485f Description: MOSFET N-CH 60V 45A/180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 30 V
на замовлення 4940 шт:
термін постачання 21-31 дні (днів)
1+509.4 грн
10+ 420.54 грн
100+ 350.48 грн
500+ 290.21 грн
IPB014N06NATMA1 IPB014N06NATMA1 Infineon Technologies IPB014N06N_Rev2+0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc160135534e951e4873 Description: MOSFET N-CH 60V 34A/180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 143µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 30 V
на замовлення 2738 шт:
термін постачання 21-31 дні (днів)
2+280.55 грн
10+ 227.04 грн
100+ 183.68 грн
500+ 153.23 грн
Мінімальне замовлення: 2
IPB026N06N IPB026N06N Infineon Technologies IPB026N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043372d5cc8013754c7b2a74f7c Description: MOSFET N-CH 60V 25A TO263-3
на замовлення 1928 шт:
термін постачання 21-31 дні (днів)
IPB057N06NATMA1 IPB057N06NATMA1 Infineon Technologies IPB057N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372c2ed50b49b3 Description: MOSFET N-CH 60V 17A/45A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 45A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
на замовлення 444 шт:
термін постачання 21-31 дні (днів)
3+108.72 грн
10+ 86.54 грн
100+ 68.9 грн
Мінімальне замовлення: 3
IPD025N06NATMA1 IPD025N06NATMA1 Infineon Technologies IPD025N06N_Rev2+1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304336415dec0136531648062c76 Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 90A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 95µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V
на замовлення 10179 шт:
термін постачання 21-31 дні (днів)
2+179.43 грн
10+ 143.5 грн
100+ 114.18 грн
500+ 90.67 грн
1000+ 76.93 грн
Мінімальне замовлення: 2
IPD053N06NATMA1 IPD053N06NATMA1 Infineon Technologies IPD053N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372c22c4c3499f Description: MOSFET N-CH 60V 18A/45A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 45A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
на замовлення 6835 шт:
термін постачання 21-31 дні (днів)
3+108.72 грн
10+ 85.59 грн
100+ 66.55 грн
500+ 52.94 грн
1000+ 43.12 грн
Мінімальне замовлення: 3
IKD15N60RFATMA1 IKD15N60RFATMA1 Infineon Technologies DS_IKD15N60RF_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304335c2937a0135e75d857b7a1a Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
на замовлення 5588 шт:
термін постачання 21-31 дні (днів)
3+130.77 грн
10+ 104.62 грн
100+ 83.29 грн
500+ 66.13 грн
1000+ 56.11 грн
Мінімальне замовлення: 3
IKD15N60RFATMA1 IKD15N60RFATMA1 Infineon Technologies DS_IKD15N60RF_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304335c2937a0135e75d857b7a1a Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+58.99 грн
Мінімальне замовлення: 2500
BSC014N06NSATMA1 BSC014N06NSATMA1 Infineon Technologies BSC014N06NS_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043382e837301386ab95a521dcd Description: MOSFET N-CH 60V 30A/100A TDSON7
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 120µA
Supplier Device Package: PG-TDSON-8-17
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
на замовлення 22796 шт:
термін постачання 21-31 дні (днів)
2+190.84 грн
10+ 154.41 грн
100+ 124.9 грн
500+ 104.19 грн
1000+ 89.22 грн
2000+ 84.01 грн
Мінімальне замовлення: 2
BSC016N06NSATMA1 BSC016N06NSATMA1 Infineon Technologies BSC016N06NS_rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc160135532b353c483c Description: MOSFET N-CH 60V 30A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 95µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V
на замовлення 23042 шт:
термін постачання 21-31 дні (днів)
2+177.15 грн
10+ 141.74 грн
100+ 112.78 грн
500+ 89.55 грн
1000+ 75.98 грн
2000+ 72.18 грн
Мінімальне замовлення: 2
BSC039N06NSATMA1 BSC039N06NSATMA1 Infineon Technologies BSC039N06NS_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372c3adce949c7 Description: MOSFET N-CH 60V 19A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
на замовлення 11959 шт:
термін постачання 21-31 дні (днів)
3+120.13 грн
10+ 96.42 грн
100+ 76.78 грн
500+ 60.97 грн
1000+ 51.73 грн
2000+ 49.15 грн
Мінімальне замовлення: 3
BSZ042N06NSATMA1 BSZ042N06NSATMA1 Infineon Technologies BSZ042N06NS_Rev2.0.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a3043345a30bc013465d4bf1862fd Description: MOSFET N-CH 60V 17A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
на замовлення 10145 шт:
термін постачання 21-31 дні (днів)
3+112.52 грн
10+ 90.27 грн
100+ 71.82 грн
500+ 57.03 грн
1000+ 48.39 грн
2000+ 45.97 грн
Мінімальне замовлення: 3
BSC028N06NSATMA1 BSC028N06NSATMA1 Infineon Technologies BSC028N06NS_Rev2.0.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a3043345a30bc013465d221bd62f9 Description: MOSFET N-CH 60V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 50µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
на замовлення 7277 шт:
термін постачання 21-31 дні (днів)
2+170.31 грн
10+ 135.96 грн
100+ 108.25 грн
500+ 85.96 грн
1000+ 72.94 грн
2000+ 69.29 грн
Мінімальне замовлення: 2
IKD06N60RFATMA1 IKD06N60RFATMA1 Infineon Technologies Infineon-EiceDRIVER_Gate_Driver_ICs-ProductSelectionGuide-v02_00-EN.pdf?fileId=8ac78c8c80027ecd018094fa56806ee1&redirId=195507 Description: IGBT TRENCH/FS 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 7ns/106ns
Switching Energy: 90µJ (on), 90µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
товар відсутній
IKD06N60RFATMA1 IKD06N60RFATMA1 Infineon Technologies Infineon-EiceDRIVER_Gate_Driver_ICs-ProductSelectionGuide-v02_00-EN.pdf?fileId=8ac78c8c80027ecd018094fa56806ee1&redirId=195507 Description: IGBT TRENCH/FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 7ns/106ns
Switching Energy: 90µJ (on), 90µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
на замовлення 2397 шт:
термін постачання 21-31 дні (днів)
5+60.82 грн
10+ 47.74 грн
100+ 37.14 грн
500+ 29.54 грн
1000+ 29.22 грн
Мінімальне замовлення: 5
IPP50R380CEXKSA1 IPP50R380CEXKSA1 Infineon Technologies IPx50R380CE_2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432e398416012e5273936c15b0 Description: MOSFET N-CH 500V 9.9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
на замовлення 485 шт:
термін постачання 21-31 дні (днів)
4+85.15 грн
50+ 66.27 грн
100+ 52.52 грн
Мінімальне замовлення: 4
IPA50R800CE IPA50R800CE Infineon Technologies IPA50R800CE+2.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a304339d29c450139d82a1c8656be Description: MOSFET N-CH 500V 5A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V
Power Dissipation (Max): 26.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO220-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
товар відсутній
IDH05G65C5XKSA1 IDH05G65C5XKSA1 Infineon Technologies IDH05G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a304339dcf4b1013a034bd32d595e Description: DIODE SCHOTTKY 650V 5A TO220-2
товар відсутній
IDH08G65C5XKSA1 IDH08G65C5XKSA1 Infineon Technologies IDH08G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a30433a047ba0013a068f5352012b Description: DIODE SIL CARB 650V 8A TO220-2-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 280 µA @ 650 V
товар відсутній
IDW30G65C5FKSA1 IDW30G65C5FKSA1 Infineon Technologies IDW30G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4b3a2b221ca Description: DIODE SIL CARB 650V 30A TO247-3
товар відсутній
IDW40G65C5FKSA1 IDW40G65C5FKSA1 Infineon Technologies IDW40G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4c399d32237 Description: DIODE SCHOTTKY 650V 40A TO247-3
товар відсутній
IPA50R190CE IPA50R190CE Infineon Technologies IPx50R190CE+2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304339d29c450139d43facbe02fb Description: MOSFET N-CH 500V 18.5A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 510µA
Supplier Device Package: PG-TO220-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V
товар відсутній
IPA50R650CE IPA50R650CE Infineon Technologies IPA50R650CE+2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304339d29c450139d4d1cdd003a9 Description: MOSFET N-CH 500V 6.1A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Power Dissipation (Max): 27.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO220-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
товар відсутній
IPA50R380CE IPA50R380CE Infineon Technologies IPx50R380CE_2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432e398416012e5273936c15b0 Description: MOSFET N-CH 500V 9.9A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Power Dissipation (Max): 29.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Supplier Device Package: PG-TO220-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
товар відсутній
IDH20G65C5XKSA1 IDH20G65C5XKSA1 Infineon Technologies IDH20G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a30433a047ba0013a06d5f79701c6 Description: DIODE SIL CARB 650V 20A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 590pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 700 µA @ 650 V
товар відсутній
IDW10G65C5FKSA1 IDW10G65C5FKSA1 Infineon Technologies IDW10G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a304339dcf4b10139fc597c6800fc Description: DIODE SIL CARB 650V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 650 V
товар відсутній
IDH03G65C5XKSA1 IDH03G65C5XKSA1 Infineon Technologies IDH03G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a304339dcf4b1013a0316abfd58ff Description: DIODE SIL CARB 650V 3A TO220-2-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 100pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
IDH06G65C5XKSA1 IDH06G65C5XKSA1 Infineon Technologies IDH06G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a304339dcf4b1013a0353dadb5970 Description: DIODE SCHOTTKY 650V 6A TO220-2
товар відсутній
IDH04G65C5XKSA1 IDH04G65C5XKSA1 Infineon Technologies IDH04G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a304339dcf4b1013a033ff5d95947 Description: DIODE SCHOTTKY 650V 4A TO220-2
товар відсутній
IDW12G65C5 IDW12G65C5 Infineon Technologies IDW12G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4699ca7206f Description: DIODE SCHOTTKY 650V 12A TO247-3
на замовлення 219 шт:
термін постачання 21-31 дні (днів)
IR3895MTR1PBF ir3895m.pdf?fileId=5546d462533600a4015355d5dd261811
IR3895MTR1PBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 16A 16PQFN
товар відсутній
IR3897MTR1PBF ir3897m.pdf?fileId=5546d462533600a4015355d5e3731813
IR3897MTR1PBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJUSTABLE 4A 16PQFN
товар відсутній
IRF7342D2TRPBF IR_PartNumberingSystem.pdf
IRF7342D2TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 3.4A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
FET Feature: Schottky Diode (Isolated)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
товар відсутній
IRLR3110ZTRPBF irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a
IRLR3110ZTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 38A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 25 V
на замовлення 11736 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+126.21 грн
10+ 100.52 грн
100+ 79.99 грн
500+ 63.52 грн
1000+ 53.9 грн
Мінімальне замовлення: 3
IRLR3705ZTRPBF irlr3705zpbf.pdf?fileId=5546d462533600a40153566d2d17269d
IRLR3705ZTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 42A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
на замовлення 2988 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+114.81 грн
10+ 92.03 грн
100+ 73.23 грн
500+ 58.15 грн
1000+ 49.34 грн
Мінімальне замовлення: 3
IRF540NSTRRPBF description irf540nspbf.pdf?fileId=5546d462533600a4015355e3a72819a3
IRF540NSTRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 33A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
товар відсутній
IR25600SPBF ir25600.pdf?fileId=5546d462533600a4015355c9bcd116e7
IR25600SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
товар відсутній
IR25601STRPBF Infineon-IR25601S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a762d794ab8
IR25601STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 200ns, 100ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 60mA, 130mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+50.87 грн
Мінімальне замовлення: 2500
IR25602STRPBF ir25602.pdf
IR25602STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+38.71 грн
Мінімальне замовлення: 2500
IR25603SPBF ir25603.pdf?fileId=5546d462533600a4015355c9e46716ef
IR25603SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 180mA, 260mA
DigiKey Programmable: Not Verified
товар відсутній
IR25604STRPBF Infineon-IR25604S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a88c8814ac5
IR25604STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+38.71 грн
Мінімальне замовлення: 2500
IR25606STRPBF Infineon-IR25606S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a88cfb54ac8
IR25606STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+43.79 грн
Мінімальне замовлення: 2500
IR25607SPbF Infineon-IR25607S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a9172b34acb
IR25607SPbF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
на замовлення 605 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+276.75 грн
10+ 239.19 грн
45+ 226.07 грн
135+ 183.87 грн
270+ 174.44 грн
540+ 156.52 грн
Мінімальне замовлення: 2
IR4301MTRPBF ir4301.pdf?fileId=5546d462533600a4015355d5fc691819
IR4301MTRPBF
Виробник: Infineon Technologies
Description: IC AMP CLASS D MONO 160W PQFN22
Features: Depop, Differential Inputs
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerVQFN
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Voltage - Supply: 10V ~ 15V
Max Output Power x Channels @ Load: 160W x 1 @ 4Ohm
Supplier Device Package: 22-PQFN (5x6)
товар відсутній
IR4302MTRPBF ir4302.pdf?fileId=5546d462533600a4015355d602a9181d
IR4302MTRPBF
Виробник: Infineon Technologies
Description: IC AMP CLASS D STEREO 130W 44QFN
Features: Depop, Differential Inputs
Packaging: Tape & Reel (TR)
Package / Case: 44-PowerVFQFN
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Voltage - Supply: 10V ~ 15V
Max Output Power x Channels @ Load: 130W x 2 @ 4Ohm
Supplier Device Package: 44-PQFN (7x7)
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+245 грн
Мінімальне замовлення: 3000
IR25601STRPBF Infineon-IR25601S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a762d794ab8
IR25601STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 200ns, 100ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 60mA, 130mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2996 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+111 грн
10+ 96.2 грн
25+ 90.73 грн
100+ 72.54 грн
250+ 68.11 грн
500+ 59.6 грн
1000+ 48.57 грн
Мінімальне замовлення: 3
IR25602STRPBF ir25602.pdf
IR25602STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 11028 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+103.4 грн
10+ 88.81 грн
25+ 84.34 грн
100+ 65.01 грн
250+ 60.77 грн
500+ 53.71 грн
1000+ 41.7 грн
Мінімальне замовлення: 3
IR25604STRPBF Infineon-IR25604S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a88c8814ac5
IR25604STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2945 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+103.4 грн
10+ 88.81 грн
25+ 84.34 грн
100+ 65.01 грн
250+ 60.77 грн
500+ 53.71 грн
1000+ 41.7 грн
Мінімальне замовлення: 3
IR25606STRPBF Infineon-IR25606S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a88cfb54ac8
IR25606STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 6949 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+103.4 грн
10+ 88.81 грн
25+ 84.34 грн
100+ 65.01 грн
250+ 60.77 грн
500+ 53.71 грн
1000+ 41.7 грн
Мінімальне замовлення: 3
IR4301MTRPBF ir4301.pdf?fileId=5546d462533600a4015355d5fc691819
IR4301MTRPBF
Виробник: Infineon Technologies
Description: IC AMP CLASS D MONO 160W PQFN22
Features: Depop, Differential Inputs
Packaging: Cut Tape (CT)
Package / Case: 22-PowerVQFN
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Voltage - Supply: 10V ~ 15V
Max Output Power x Channels @ Load: 160W x 1 @ 4Ohm
Supplier Device Package: 22-PQFN (5x6)
на замовлення 3632 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+280.55 грн
10+ 242.71 грн
25+ 229.45 грн
100+ 186.62 грн
250+ 177.05 грн
500+ 158.87 грн
1000+ 131.79 грн
Мінімальне замовлення: 2
IR4302MTRPBF ir4302.pdf?fileId=5546d462533600a4015355d602a9181d
IR4302MTRPBF
Виробник: Infineon Technologies
Description: IC AMP CLASS D STEREO 130W 44QFN
Features: Depop, Differential Inputs
Packaging: Cut Tape (CT)
Package / Case: 44-PowerVFQFN
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Voltage - Supply: 10V ~ 15V
Max Output Power x Channels @ Load: 130W x 2 @ 4Ohm
Supplier Device Package: 44-PQFN (7x7)
Part Status: Active
на замовлення 8311 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+330.73 грн
10+ 288.1 грн
25+ 274.73 грн
100+ 223.85 грн
250+ 221.41 грн
CY8CMBR2110-24LQXI Infineon-CY8CMBR2110_CapSense_Express_10-Button_Controller.-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec7e3463fc5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8CMBR2110-24LQXI
Виробник: Infineon Technologies
Description: IC MBR 10 BUTTON 10 LED 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 3.4mA
Number of Inputs: Up to 10
Supplier Device Package: 32-QFN (5x5)
Proximity Detection: No
LED Driver Channels: Up to 10
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+354.3 грн
10+ 306.48 грн
25+ 289.75 грн
80+ 235.66 грн
230+ 223.58 грн
490+ 200.62 грн
980+ 166.42 грн
IKD03N60RF Infineon-IKD03N60RF_-DS-v02_05-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433c5c92fb013c5d3978350068
IKD03N60RF
Виробник: Infineon Technologies
Description: IGBT 600V 5A 53.6W TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 10ns/128ns
Switching Energy: 90µJ
Test Condition: 400V, 2.5A, 68Ohm, 15V
Gate Charge: 17.1 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 7.5 A
Power - Max: 53.6 W
товар відсутній
IKD10N60RFATMA1 DS_IKD10N60RF_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304335c2937a0135e7ea2d2d7a72
IKD10N60RFATMA1
Виробник: Infineon Technologies
Description: IGBT 600V 20A 150W PG-TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/168ns
Switching Energy: 190µJ (on), 160µJ (off)
Test Condition: 400V, 10A, 26Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 150 W
на замовлення 2480 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+114.05 грн
10+ 89.69 грн
100+ 69.76 грн
500+ 55.49 грн
1000+ 45.2 грн
Мінімальне замовлення: 3
IKD10N60RFATMA1 DS_IKD10N60RF_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304335c2937a0135e7ea2d2d7a72
IKD10N60RFATMA1
Виробник: Infineon Technologies
Description: IGBT 600V 20A 150W PG-TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/168ns
Switching Energy: 190µJ (on), 160µJ (off)
Test Condition: 400V, 10A, 26Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 150 W
товар відсутній
IPI020N06N IPI020N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372b6b23064900
IPI020N06N
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 29A TO262-3
на замовлення 33 шт:
термін постачання 21-31 дні (днів)
IPI029N06NAKSA1 IPI029N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372bab38f54926
IPI029N06NAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 24A/100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 75µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+159.66 грн
Мінімальне замовлення: 2
IPP060N06NAKSA1 IPP060N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372c06d9d7498a
IPP060N06NAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 17A/45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 45A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
на замовлення 494 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+109.48 грн
50+ 84.28 грн
100+ 69.34 грн
Мінімальне замовлення: 3
BSC014N04LSATMA1 DS_BSC014N04LS_2_1.PDF?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc16013552e99a8147f1
BSC014N04LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 32/100A SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SuperSO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
на замовлення 14749 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+117.09 грн
10+ 93.64 грн
100+ 74.5 грн
500+ 59.16 грн
1000+ 50.2 грн
2000+ 47.69 грн
Мінімальне замовлення: 3
BSZ023N04LSATMA1 BSZ023N04LS.pdf
BSZ023N04LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 22A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 20 V
товар відсутній
IPB010N06NATMA1 IPB010N06N_Rev2+0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc1601355341f17a485f
IPB010N06NATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 45A/180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 30 V
на замовлення 4940 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+509.4 грн
10+ 420.54 грн
100+ 350.48 грн
500+ 290.21 грн
IPB014N06NATMA1 IPB014N06N_Rev2+0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc160135534e951e4873
IPB014N06NATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 34A/180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 143µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 30 V
на замовлення 2738 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+280.55 грн
10+ 227.04 грн
100+ 183.68 грн
500+ 153.23 грн
Мінімальне замовлення: 2
IPB026N06N IPB026N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043372d5cc8013754c7b2a74f7c
IPB026N06N
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 25A TO263-3
на замовлення 1928 шт:
термін постачання 21-31 дні (днів)
IPB057N06NATMA1 IPB057N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372c2ed50b49b3
IPB057N06NATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 17A/45A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 45A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
на замовлення 444 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+108.72 грн
10+ 86.54 грн
100+ 68.9 грн
Мінімальне замовлення: 3
IPD025N06NATMA1 IPD025N06N_Rev2+1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304336415dec0136531648062c76
IPD025N06NATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 90A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 95µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V
на замовлення 10179 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+179.43 грн
10+ 143.5 грн
100+ 114.18 грн
500+ 90.67 грн
1000+ 76.93 грн
Мінімальне замовлення: 2
IPD053N06NATMA1 IPD053N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372c22c4c3499f
IPD053N06NATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 18A/45A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 45A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
на замовлення 6835 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+108.72 грн
10+ 85.59 грн
100+ 66.55 грн
500+ 52.94 грн
1000+ 43.12 грн
Мінімальне замовлення: 3
IKD15N60RFATMA1 DS_IKD15N60RF_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304335c2937a0135e75d857b7a1a
IKD15N60RFATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
на замовлення 5588 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+130.77 грн
10+ 104.62 грн
100+ 83.29 грн
500+ 66.13 грн
1000+ 56.11 грн
Мінімальне замовлення: 3
IKD15N60RFATMA1 DS_IKD15N60RF_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304335c2937a0135e75d857b7a1a
IKD15N60RFATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+58.99 грн
Мінімальне замовлення: 2500
BSC014N06NSATMA1 BSC014N06NS_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043382e837301386ab95a521dcd
BSC014N06NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 30A/100A TDSON7
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 120µA
Supplier Device Package: PG-TDSON-8-17
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
на замовлення 22796 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+190.84 грн
10+ 154.41 грн
100+ 124.9 грн
500+ 104.19 грн
1000+ 89.22 грн
2000+ 84.01 грн
Мінімальне замовлення: 2
BSC016N06NSATMA1 BSC016N06NS_rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc160135532b353c483c
BSC016N06NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 30A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 95µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V
на замовлення 23042 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+177.15 грн
10+ 141.74 грн
100+ 112.78 грн
500+ 89.55 грн
1000+ 75.98 грн
2000+ 72.18 грн
Мінімальне замовлення: 2
BSC039N06NSATMA1 BSC039N06NS_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372c3adce949c7
BSC039N06NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 19A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
на замовлення 11959 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+120.13 грн
10+ 96.42 грн
100+ 76.78 грн
500+ 60.97 грн
1000+ 51.73 грн
2000+ 49.15 грн
Мінімальне замовлення: 3
BSZ042N06NSATMA1 BSZ042N06NS_Rev2.0.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a3043345a30bc013465d4bf1862fd
BSZ042N06NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 17A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
на замовлення 10145 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+112.52 грн
10+ 90.27 грн
100+ 71.82 грн
500+ 57.03 грн
1000+ 48.39 грн
2000+ 45.97 грн
Мінімальне замовлення: 3
BSC028N06NSATMA1 BSC028N06NS_Rev2.0.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a3043345a30bc013465d221bd62f9
BSC028N06NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 50µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
на замовлення 7277 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+170.31 грн
10+ 135.96 грн
100+ 108.25 грн
500+ 85.96 грн
1000+ 72.94 грн
2000+ 69.29 грн
Мінімальне замовлення: 2
IKD06N60RFATMA1 Infineon-EiceDRIVER_Gate_Driver_ICs-ProductSelectionGuide-v02_00-EN.pdf?fileId=8ac78c8c80027ecd018094fa56806ee1&redirId=195507
IKD06N60RFATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH/FS 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 7ns/106ns
Switching Energy: 90µJ (on), 90µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
товар відсутній
IKD06N60RFATMA1 Infineon-EiceDRIVER_Gate_Driver_ICs-ProductSelectionGuide-v02_00-EN.pdf?fileId=8ac78c8c80027ecd018094fa56806ee1&redirId=195507
IKD06N60RFATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH/FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 7ns/106ns
Switching Energy: 90µJ (on), 90µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
на замовлення 2397 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+60.82 грн
10+ 47.74 грн
100+ 37.14 грн
500+ 29.54 грн
1000+ 29.22 грн
Мінімальне замовлення: 5
IPP50R380CEXKSA1 IPx50R380CE_2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432e398416012e5273936c15b0
IPP50R380CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 9.9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
на замовлення 485 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+85.15 грн
50+ 66.27 грн
100+ 52.52 грн
Мінімальне замовлення: 4
IPA50R800CE IPA50R800CE+2.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a304339d29c450139d82a1c8656be
IPA50R800CE
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 5A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V
Power Dissipation (Max): 26.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO220-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
товар відсутній
IDH05G65C5XKSA1 IDH05G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a304339dcf4b1013a034bd32d595e
IDH05G65C5XKSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 650V 5A TO220-2
товар відсутній
IDH08G65C5XKSA1 IDH08G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a30433a047ba0013a068f5352012b
IDH08G65C5XKSA1
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 8A TO220-2-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 280 µA @ 650 V
товар відсутній
IDW30G65C5FKSA1 IDW30G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4b3a2b221ca
IDW30G65C5FKSA1
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 30A TO247-3
товар відсутній
IDW40G65C5FKSA1 IDW40G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4c399d32237
IDW40G65C5FKSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 650V 40A TO247-3
товар відсутній
IPA50R190CE IPx50R190CE+2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304339d29c450139d43facbe02fb
IPA50R190CE
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 18.5A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 510µA
Supplier Device Package: PG-TO220-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V
товар відсутній
IPA50R650CE IPA50R650CE+2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304339d29c450139d4d1cdd003a9
IPA50R650CE
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 6.1A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Power Dissipation (Max): 27.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO220-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
товар відсутній
IPA50R380CE IPx50R380CE_2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432e398416012e5273936c15b0
IPA50R380CE
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 9.9A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Power Dissipation (Max): 29.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Supplier Device Package: PG-TO220-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
товар відсутній
IDH20G65C5XKSA1 IDH20G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a30433a047ba0013a06d5f79701c6
IDH20G65C5XKSA1
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 20A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 590pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 700 µA @ 650 V
товар відсутній
IDW10G65C5FKSA1 IDW10G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a304339dcf4b10139fc597c6800fc
IDW10G65C5FKSA1
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 650 V
товар відсутній
IDH03G65C5XKSA1 IDH03G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a304339dcf4b1013a0316abfd58ff
IDH03G65C5XKSA1
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 3A TO220-2-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 100pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
IDH06G65C5XKSA1 IDH06G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a304339dcf4b1013a0353dadb5970
IDH06G65C5XKSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 650V 6A TO220-2
товар відсутній
IDH04G65C5XKSA1 IDH04G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a304339dcf4b1013a033ff5d95947
IDH04G65C5XKSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 650V 4A TO220-2
товар відсутній
IDW12G65C5 IDW12G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4699ca7206f
IDW12G65C5
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 650V 12A TO247-3
на замовлення 219 шт:
термін постачання 21-31 дні (днів)
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