IPB057N06NATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 17A/45A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 45A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
Description: MOSFET N-CH 60V 17A/45A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 45A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
на замовлення 444 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 109.12 грн |
10+ | 86.85 грн |
100+ | 69.15 грн |
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Технічний опис IPB057N06NATMA1 Infineon Technologies
Description: MOSFET N-CH 60V 17A/45A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 45A (Tc), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 45A, 10V, Power Dissipation (Max): 3W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 36µA, Supplier Device Package: PG-TO263-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V.
Інші пропозиції IPB057N06NATMA1 за ціною від 46.13 грн до 116.86 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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IPB057N06NATMA1 | Виробник : Infineon Technologies | MOSFET N-Ch 60V 45A D2PAK-2 |
на замовлення 2068 шт: термін постачання 21-30 дні (днів) |
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IPB057N06NATMA1 | Виробник : Infineon Technologies | Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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IPB057N06NATMA1 | Виробник : Infineon Technologies | Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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IPB057N06NATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO263-3 Kind of channel: enhanced On-state resistance: 5.7mΩ Gate-source voltage: ±20V Type of transistor: N-MOSFET Drain current: 45A Power dissipation: 83W Polarisation: unipolar Drain-source voltage: 60V Case: PG-TO263-3 Mounting: SMD Technology: OptiMOS™ кількість в упаковці: 1 шт |
товар відсутній |
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IPB057N06NATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 60V 17A/45A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 45A, 10V Power Dissipation (Max): 3W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 36µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V |
товар відсутній |
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IPB057N06NATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO263-3 Kind of channel: enhanced On-state resistance: 5.7mΩ Gate-source voltage: ±20V Type of transistor: N-MOSFET Drain current: 45A Power dissipation: 83W Polarisation: unipolar Drain-source voltage: 60V Case: PG-TO263-3 Mounting: SMD Technology: OptiMOS™ |
товар відсутній |