Продукція > ALLIANCE MEMORY > Всі товари виробника ALLIANCE MEMORY (3714) > Сторінка 29 з 62
Фото | Назва | Виробник | Інформація |
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AS6C1008J-55STINTR | Alliance Memory | SRAM 16Mb, LP SRAM, 1M x 16, 2.7 - 3.6V, 48pin TSOP I (12 x 20mm), 45ns, Industrial Temp |
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AS6C1016-55BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5.5V |
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AS6C1016-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5.5V |
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AS6C1016-55ZINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC IC width: 400mils Operating voltage: 2.7...5.5V |
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AS6C1016-55BIN | Alliance Memory | SRAM 1Mb, 2.7V-5.5V, 55ns 64K x 8 Asynch SRAM |
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AS6C1016-55BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5.5V кількість в упаковці: 480 шт |
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AS6C1016-55BINTR | Alliance Memory | SRAM 1Mb, 2.7V-5.5V, 55ns 64K x 16 |
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AS6C1016-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5.5V кількість в упаковці: 2000 шт |
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AS6C1016-55ZIN | Alliance Memory | SRAM LP SRAM, 1Mb, 64K x 16, 2.7 - 5.5V, 44pin TSOP II, 55ns, Industrial Temp - Tray |
на замовлення 134 шт: термін постачання 21-30 дні (днів) |
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AS6C1016-55ZINTR | Alliance Memory | SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM |
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AS6C1016-55ZINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC IC width: 400mils Operating voltage: 2.7...5.5V кількість в упаковці: 1000 шт |
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AS6C1608-55BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.7÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 2Mx8bit Access time: 55ns Case: TFBGA48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V |
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AS6C1608-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.7÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 2Mx8bit Access time: 55ns Case: TFBGA48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V |
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AS6C1608-55BIN | Alliance Memory | SRAM 16M 3V 55ns 2048Kx8 LP Asyn SRAM |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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AS6C1608-55BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.7÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 2Mx8bit Access time: 55ns Case: TFBGA48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V кількість в упаковці: 135 шт |
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AS6C1608-55BINTR | Alliance Memory | SRAM 16M 3V 55ns 2048Kx8 LP Asyn SRAM |
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AS6C1608-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.7÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 2Mx8bit Access time: 55ns Case: TFBGA48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V кількість в упаковці: 1000 шт |
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AS6C1608-55TIN | Alliance Memory | SRAM 16M 3V 55ns 2048Kx8 LP Asyn SRAM |
на замовлення 86 шт: термін постачання 21-30 дні (днів) |
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AS6C1608-55TINTR | Alliance Memory | SRAM 16M 3V 55ns 2048Kx8 LP Asyn SRAM |
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AS6C1608B-45BIN | Alliance Memory | SRAM LP SRAM, 16Mb, 2048k x 8, 2.7 - 3.6V, 48ball TFBGA, Industrial Temp - Tray |
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AS6C1608B-45BINTR | Alliance Memory | DRAM |
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AS6C1608B-45TIN | Alliance Memory | SRAM LP SRAM, 16Mb, 2048k x 8, 2.7 - 3.6V, 44pin TSOP II, Industrial Temp - Tray |
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AS6C1608B-55TIN | ALLIANCE MEMORY | AS6C1608B-55TIN Parallel SRAM memories - integ. circ. |
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AS6C1608B-55TINTR | ALLIANCE MEMORY | AS6C1608B-55TINTR Parallel SRAM memories - integ. circ. |
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AS6C1616-55BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TFBGA48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V |
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AS6C1616-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TFBGA48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V |
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AS6C1616-55TIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48 Type of integrated circuit: SRAM memory Case: TSOP48 Mounting: SMD Integrated circuit features: LPC Memory: 16Mb SRAM Operating voltage: 2.7...3.6V Kind of memory: asynchronous; SRAM Memory organisation: 1Mx16bit Access time: 55ns Kind of interface: parallel |
на замовлення 89 шт: термін постачання 21-30 дні (днів) |
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AS6C1616-55TINLTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V |
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AS6C1616-55TINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V |
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AS6C1616-70BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V |
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AS6C1616-70BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V |
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AS6C1616-55BIN | Alliance Memory | SRAM 16M 3V 55ns 1024Kx16 LP Asy SRAM |
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AS6C1616-55BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TFBGA48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V кількість в упаковці: 480 шт |
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AS6C1616-55BINTR | Alliance Memory | SRAM 16M 3V 55ns 1024Kx16 LP Asy SRAM |
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AS6C1616-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TFBGA48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V кількість в упаковці: 2000 шт |
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AS6C1616-55TIN | Alliance Memory | SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM |
на замовлення 1720 шт: термін постачання 21-30 дні (днів) |
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AS6C1616-55TIN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS6C1616-55TIN - SRAM, Asynchron, 16 Mbit, 1024K x 16 Bit, TSOP-I, 48 Pin(s), 2.7 V tariffCode: 85423245 rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Speicherdichte: 16Mbit usEccn: 3A991.b.2.a Versorgungsspannung, nom.: 3V Taktfrequenz, max.: - Betriebstemperatur, min.: -40°C Versorgungsspannung, min.: 2.7V euEccn: NLR Anzahl der Pins: 48Pin(s) productTraceability: No Versorgungsspannung, max.: 3.6V Betriebstemperatur, max.: 85°C |
на замовлення 99 шт: термін постачання 21-31 дні (днів) |
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AS6C1616-55TIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48 Type of integrated circuit: SRAM memory Case: TSOP48 Mounting: SMD Integrated circuit features: LPC Memory: 16Mb SRAM Operating voltage: 2.7...3.6V Kind of memory: asynchronous; SRAM Memory organisation: 1Mx16bit Access time: 55ns Kind of interface: parallel кількість в упаковці: 1 шт |
на замовлення 89 шт: термін постачання 14-21 дні (днів) |
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AS6C1616-55TINL | Alliance Memory | SRAM 16M 3V 55ns LP 1024Kx16 Asynch IT |
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AS6C1616-55TINLTR | Alliance Memory | SRAM 16M 3V 55ns LP 1024Kx16 Asynch IT |
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AS6C1616-55TINLTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V кількість в упаковці: 1000 шт |
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AS6C1616-55TINTR | Alliance Memory | SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM |
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AS6C1616-55TINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V кількість в упаковці: 1500 шт |
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AS6C1616-70BIN | Alliance Memory | SRAM 16M, 3V, 70ns 1024K x 16 Asyn SRAM |
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AS6C1616-70BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V кількість в упаковці: 480 шт |
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AS6C1616-70BINTR | Alliance Memory | SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM |
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AS6C1616-70BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V кількість в упаковці: 2000 шт |
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AS6C1616A-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48 Integrated circuit features: LPC Kind of interface: parallel Memory: 16Mb SRAM Mounting: SMD Case: TFBGA48 Operating voltage: 2.7...3.6V Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory organisation: 1Mx16bit Access time: 55ns |
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AS6C1616A-55BIN | Alliance Memory | SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM |
на замовлення 364 шт: термін постачання 21-30 дні (днів) |
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AS6C1616A-55BINTR | Alliance Memory | SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM |
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AS6C1616A-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48 Integrated circuit features: LPC Kind of interface: parallel Memory: 16Mb SRAM Mounting: SMD Case: TFBGA48 Operating voltage: 2.7...3.6V Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory organisation: 1Mx16bit Access time: 55ns кількість в упаковці: 1000 шт |
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AS6C1616B-45TIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 45ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 45ns Case: TSOP48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V |
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AS6C1616B-45TINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 45ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 45ns Case: TSOP48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V |
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AS6C1616B-55BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TFBGA48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V |
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AS6C1616B-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TFBGA48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V |
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AS6C1616B-55TINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TSOP48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V |
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AS6C1616B-45BIN | Alliance Memory | Alliance Memory |
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AS6C1616B-45BINTR | Alliance Memory | Alliance Memory |
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AS6C1616B-45TIN | Alliance Memory | SRAM |
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AS6C1616B-45TIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 45ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 45ns Case: TSOP48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V кількість в упаковці: 1 шт |
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AS6C1008J-55STINTR |
Виробник: Alliance Memory
SRAM 16Mb, LP SRAM, 1M x 16, 2.7 - 3.6V, 48pin TSOP I (12 x 20mm), 45ns, Industrial Temp
SRAM 16Mb, LP SRAM, 1M x 16, 2.7 - 3.6V, 48pin TSOP I (12 x 20mm), 45ns, Industrial Temp
товар відсутній
AS6C1016-55BIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
товар відсутній
AS6C1016-55BINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
товар відсутній
AS6C1016-55ZINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5.5V
товар відсутній
AS6C1016-55BIN |
Виробник: Alliance Memory
SRAM 1Mb, 2.7V-5.5V, 55ns 64K x 8 Asynch SRAM
SRAM 1Mb, 2.7V-5.5V, 55ns 64K x 8 Asynch SRAM
товар відсутній
AS6C1016-55BIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
кількість в упаковці: 480 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
кількість в упаковці: 480 шт
товар відсутній
AS6C1016-55BINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
кількість в упаковці: 2000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
кількість в упаковці: 2000 шт
товар відсутній
AS6C1016-55ZIN |
Виробник: Alliance Memory
SRAM LP SRAM, 1Mb, 64K x 16, 2.7 - 5.5V, 44pin TSOP II, 55ns, Industrial Temp - Tray
SRAM LP SRAM, 1Mb, 64K x 16, 2.7 - 5.5V, 44pin TSOP II, 55ns, Industrial Temp - Tray
на замовлення 134 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 261.84 грн |
10+ | 229.14 грн |
100+ | 178.39 грн |
270+ | 174.08 грн |
540+ | 160.41 грн |
1080+ | 157.53 грн |
2565+ | 156.1 грн |
AS6C1016-55ZINTR |
Виробник: Alliance Memory
SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM
SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM
товар відсутній
AS6C1016-55ZINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5.5V
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5.5V
кількість в упаковці: 1000 шт
товар відсутній
AS6C1608-55BIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
товар відсутній
AS6C1608-55BINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
товар відсутній
AS6C1608-55BIN |
Виробник: Alliance Memory
SRAM 16M 3V 55ns 2048Kx8 LP Asyn SRAM
SRAM 16M 3V 55ns 2048Kx8 LP Asyn SRAM
на замовлення 13 шт:
термін постачання 21-30 дні (днів)AS6C1608-55BIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
кількість в упаковці: 135 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
кількість в упаковці: 135 шт
товар відсутній
AS6C1608-55BINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
кількість в упаковці: 1000 шт
товар відсутній
AS6C1608-55TIN |
Виробник: Alliance Memory
SRAM 16M 3V 55ns 2048Kx8 LP Asyn SRAM
SRAM 16M 3V 55ns 2048Kx8 LP Asyn SRAM
на замовлення 86 шт:
термін постачання 21-30 дні (днів)AS6C1608B-45BIN |
Виробник: Alliance Memory
SRAM LP SRAM, 16Mb, 2048k x 8, 2.7 - 3.6V, 48ball TFBGA, Industrial Temp - Tray
SRAM LP SRAM, 16Mb, 2048k x 8, 2.7 - 3.6V, 48ball TFBGA, Industrial Temp - Tray
товар відсутній
AS6C1608B-45TIN |
Виробник: Alliance Memory
SRAM LP SRAM, 16Mb, 2048k x 8, 2.7 - 3.6V, 44pin TSOP II, Industrial Temp - Tray
SRAM LP SRAM, 16Mb, 2048k x 8, 2.7 - 3.6V, 44pin TSOP II, Industrial Temp - Tray
товар відсутній
AS6C1608B-55TIN |
Виробник: ALLIANCE MEMORY
AS6C1608B-55TIN Parallel SRAM memories - integ. circ.
AS6C1608B-55TIN Parallel SRAM memories - integ. circ.
товар відсутній
AS6C1608B-55TINTR |
Виробник: ALLIANCE MEMORY
AS6C1608B-55TINTR Parallel SRAM memories - integ. circ.
AS6C1608B-55TINTR Parallel SRAM memories - integ. circ.
товар відсутній
AS6C1616-55BIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
товар відсутній
AS6C1616-55BINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
товар відсутній
AS6C1616-55TIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Memory: 16Mb SRAM
Operating voltage: 2.7...3.6V
Kind of memory: asynchronous; SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Memory: 16Mb SRAM
Operating voltage: 2.7...3.6V
Kind of memory: asynchronous; SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Kind of interface: parallel
на замовлення 89 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1017.56 грн |
2+ | 720.08 грн |
4+ | 681.12 грн |
AS6C1616-55TINLTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
товар відсутній
AS6C1616-55TINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
товар відсутній
AS6C1616-70BIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
товар відсутній
AS6C1616-70BINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
товар відсутній
AS6C1616-55BIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
кількість в упаковці: 480 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
кількість в упаковці: 480 шт
товар відсутній
AS6C1616-55BINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
кількість в упаковці: 2000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
кількість в упаковці: 2000 шт
товар відсутній
AS6C1616-55TIN |
Виробник: Alliance Memory
SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM
SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM
на замовлення 1720 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 929.02 грн |
10+ | 848.74 грн |
25+ | 669.7 грн |
96+ | 630.86 грн |
288+ | 593.45 грн |
576+ | 574.03 грн |
2592+ | 566.12 грн |
AS6C1616-55TIN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS6C1616-55TIN - SRAM, Asynchron, 16 Mbit, 1024K x 16 Bit, TSOP-I, 48 Pin(s), 2.7 V
tariffCode: 85423245
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Speicherdichte: 16Mbit
usEccn: 3A991.b.2.a
Versorgungsspannung, nom.: 3V
Taktfrequenz, max.: -
Betriebstemperatur, min.: -40°C
Versorgungsspannung, min.: 2.7V
euEccn: NLR
Anzahl der Pins: 48Pin(s)
productTraceability: No
Versorgungsspannung, max.: 3.6V
Betriebstemperatur, max.: 85°C
Description: ALLIANCE MEMORY - AS6C1616-55TIN - SRAM, Asynchron, 16 Mbit, 1024K x 16 Bit, TSOP-I, 48 Pin(s), 2.7 V
tariffCode: 85423245
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Speicherdichte: 16Mbit
usEccn: 3A991.b.2.a
Versorgungsspannung, nom.: 3V
Taktfrequenz, max.: -
Betriebstemperatur, min.: -40°C
Versorgungsspannung, min.: 2.7V
euEccn: NLR
Anzahl der Pins: 48Pin(s)
productTraceability: No
Versorgungsspannung, max.: 3.6V
Betriebstemperatur, max.: 85°C
на замовлення 99 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1016.75 грн |
10+ | 893.29 грн |
25+ | 861.82 грн |
50+ | 781.53 грн |
AS6C1616-55TIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Memory: 16Mb SRAM
Operating voltage: 2.7...3.6V
Kind of memory: asynchronous; SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Kind of interface: parallel
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Memory: 16Mb SRAM
Operating voltage: 2.7...3.6V
Kind of memory: asynchronous; SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Kind of interface: parallel
кількість в упаковці: 1 шт
на замовлення 89 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1221.07 грн |
2+ | 897.33 грн |
4+ | 817.34 грн |
135+ | 785.87 грн |
AS6C1616-55TINLTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
кількість в упаковці: 1000 шт
товар відсутній
AS6C1616-55TINTR |
Виробник: Alliance Memory
SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM
SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM
товар відсутній
AS6C1616-55TINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
кількість в упаковці: 1500 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
кількість в упаковці: 1500 шт
товар відсутній
AS6C1616-70BIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
кількість в упаковці: 480 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
кількість в упаковці: 480 шт
товар відсутній
AS6C1616-70BINTR |
Виробник: Alliance Memory
SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM
SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM
товар відсутній
AS6C1616-70BINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
кількість в упаковці: 2000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
кількість в упаковці: 2000 шт
товар відсутній
AS6C1616A-55BINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Integrated circuit features: LPC
Kind of interface: parallel
Memory: 16Mb SRAM
Mounting: SMD
Case: TFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Integrated circuit features: LPC
Kind of interface: parallel
Memory: 16Mb SRAM
Mounting: SMD
Case: TFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
товар відсутній
AS6C1616A-55BIN |
Виробник: Alliance Memory
SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM
SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM
на замовлення 364 шт:
термін постачання 21-30 дні (днів)AS6C1616A-55BINTR |
Виробник: Alliance Memory
SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM
SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM
товар відсутній
AS6C1616A-55BINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Integrated circuit features: LPC
Kind of interface: parallel
Memory: 16Mb SRAM
Mounting: SMD
Case: TFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Integrated circuit features: LPC
Kind of interface: parallel
Memory: 16Mb SRAM
Mounting: SMD
Case: TFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
кількість в упаковці: 1000 шт
товар відсутній
AS6C1616B-45TIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 45ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 45ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
товар відсутній
AS6C1616B-45TINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 45ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 45ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
товар відсутній
AS6C1616B-55BIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
товар відсутній
AS6C1616B-55BINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
товар відсутній
AS6C1616B-55TINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
товар відсутній
AS6C1616B-45TIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 45ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 45ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
кількість в упаковці: 1 шт
товар відсутній