Продукція > ALLIANCE MEMORY > Всі товари виробника ALLIANCE MEMORY (3714) > Сторінка 26 з 62
Фото | Назва | Виробник | Інформація |
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AS4C8M16D1A-5TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; TSOP66 II; -40÷85°C; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 8Mx16bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 2.5V |
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AS4C8M16MSA-6BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bit; 1.7V; 166MHz; 6ns; FBGA54; -40÷85°C Case: FBGA54 Operating temperature: -40...85°C Mounting: SMD Access time: 6ns Kind of package: in-tray Kind of memory: DDR1; SDRAM Kind of interface: parallel Memory capacity: 128Mb Clock frequency: 166MHz Operating voltage: 1.7V Type of integrated circuit: DRAM memory Memory organisation: 8Mx16bit |
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AS4C8M16MSA-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bit; 1.7V; 166MHz; 6ns; FBGA54; -40÷85°C; reel Case: FBGA54 Operating temperature: -40...85°C Mounting: SMD Access time: 6ns Kind of package: reel Kind of memory: DDR1; SDRAM Kind of interface: parallel Memory capacity: 128Mb Clock frequency: 166MHz Operating voltage: 1.7V Type of integrated circuit: DRAM memory Memory organisation: 8Mx16bit |
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AS4C8M16MSA-6BIN | Alliance Memory | DRAM 128M 166MHz 8Mx16 Mobile LP SDRAM IT |
на замовлення 180 шт: термін постачання 21-30 дні (днів) |
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AS4C8M16MSA-6BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bit; 1.7V; 166MHz; 6ns; FBGA54; -40÷85°C Case: FBGA54 Operating temperature: -40...85°C Mounting: SMD Access time: 6ns Kind of package: in-tray Kind of memory: DDR1; SDRAM Kind of interface: parallel Memory capacity: 128Mb Clock frequency: 166MHz Operating voltage: 1.7V Type of integrated circuit: DRAM memory Memory organisation: 8Mx16bit |
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AS4C8M16MSA-6BINTR | Alliance Memory | DRAM 128M 166MHz 8Mx16 Mobile LP SDRAM IT |
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AS4C8M16MSA-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bit; 1.7V; 166MHz; 6ns; FBGA54; -40÷85°C; reel Case: FBGA54 Operating temperature: -40...85°C Mounting: SMD Access time: 6ns Kind of package: reel Kind of memory: DDR1; SDRAM Kind of interface: parallel Memory capacity: 128Mb Clock frequency: 166MHz Operating voltage: 1.7V Type of integrated circuit: DRAM memory Memory organisation: 8Mx16bit |
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AS4C8M16S-6TCN | Alliance Memory | DRAM 128M SDRAM 8M X 16 166MHz |
на замовлення 457 шт: термін постачання 21-30 дні (днів) |
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AS4C8M16SA-6BAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 3.3V |
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AS4C8M16SA-6BANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Operating voltage: 3.3V |
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AS4C8M16SA-6BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Operating voltage: 3.3V |
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AS4C8M16SA-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 3.3V |
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AS4C8M16SA-6TAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 3.3V |
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AS4C8M16SA-6TANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Operating voltage: 3.3V |
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AS4C8M16SA-6TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V |
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AS4C8M16SA-6TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
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AS4C8M16SA-6TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Access time: 5.4ns Case: TSOP54 II Kind of interface: parallel Mounting: SMD Kind of package: in-tray Operating temperature: -40...85°C Clock frequency: 166MHz Operating voltage: 3.3V |
на замовлення 540 шт: термін постачання 21-30 дні (днів) |
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AS4C8M16SA-6TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
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AS4C8M16SA-7BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; FBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 143MHz Access time: 5.4ns Case: FBGA54 Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Operating voltage: 3.3V |
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AS4C8M16SA-7BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; FBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 143MHz Access time: 5.4ns Case: FBGA54 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V |
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AS4C8M16SA-7TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Access time: 5.4ns Case: TSOP54 II Kind of interface: parallel Mounting: SMD Kind of package: in-tray Operating temperature: 0...70°C Clock frequency: 143MHz Operating voltage: 3.3V |
на замовлення 464 шт: термін постачання 21-30 дні (днів) |
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AS4C8M16SA-7TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 143MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
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AS4C8M16SA-6BAN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C8M16SA-6BAN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 166 MHz, FBGA, 54 Pin(s) tariffCode: 85423231 DRAM-Ausführung: SDRAM rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: FBGA Speicherdichte: 128Mbit usEccn: EAR99 Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 166MHz Betriebstemperatur, min.: -40°C euEccn: NLR Anzahl der Pins: 54Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 105°C Speicherkonfiguration: 8M x 16 Bit SVHC: To Be Advised |
на замовлення 303 шт: термін постачання 21-31 дні (днів) |
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AS4C8M16SA-6BAN | Alliance Memory | DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54ball BGA, 166 Mhz, Automotive Temp - Tray |
на замовлення 225 шт: термін постачання 21-30 дні (днів) |
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AS4C8M16SA-6BAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 3.3V кількість в упаковці: 348 шт |
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AS4C8M16SA-6BANTR | Alliance Memory | DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54ball BGA, 166 Mhz, Automotive Temp - Tape & Reel |
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AS4C8M16SA-6BANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Operating voltage: 3.3V кількість в упаковці: 2500 шт |
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AS4C8M16SA-6BIN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C8M16SA-6BIN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 166 MHz, TFBGA, 54 Pin(s) tariffCode: 85423231 DRAM-Ausführung: SDRAM rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: TFBGA Speicherdichte: 128Mbit usEccn: EAR99 Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 166MHz Betriebstemperatur, min.: -40°C euEccn: NLR Anzahl der Pins: 54Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 85°C Speicherkonfiguration: 8M x 16 Bit SVHC: To Be Advised |
на замовлення 268 шт: термін постачання 21-31 дні (днів) |
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AS4C8M16SA-6BIN | Alliance Memory | DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54ball BGA, 166 Mhz, Industrial Temp - Tray |
на замовлення 4724 шт: термін постачання 21-30 дні (днів) |
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AS4C8M16SA-6BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Operating voltage: 3.3V кількість в упаковці: 348 шт |
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AS4C8M16SA-6BINTR | Alliance Memory | DRAM |
на замовлення 3109 шт: термін постачання 21-30 дні (днів) |
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AS4C8M16SA-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 3.3V кількість в упаковці: 2500 шт |
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AS4C8M16SA-6TAN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C8M16SA-6TAN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s) tariffCode: 85423231 DRAM-Ausführung: SDRAM rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: TSOP-II Speicherdichte: 128Mbit usEccn: EAR99 Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 166MHz Betriebstemperatur, min.: -40°C euEccn: NLR Anzahl der Pins: 54Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 105°C Speicherkonfiguration: 8M x 16 Bit SVHC: To Be Advised |
на замовлення 101 шт: термін постачання 21-31 дні (днів) |
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AS4C8M16SA-6TAN | Alliance Memory | DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54pin TSOP II, 166 Mhz, automotive temp - Tray |
на замовлення 102 шт: термін постачання 21-30 дні (днів) |
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AS4C8M16SA-6TAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 3.3V кількість в упаковці: 1 шт |
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AS4C8M16SA-6TANTR | Alliance Memory | DRAM SDR, 128Mb, 8M x 16, 3.3V, 54pin TSOP II, 166 Mhz, automotive temp(.63), T&R |
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AS4C8M16SA-6TANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Operating voltage: 3.3V кількість в упаковці: 1000 шт |
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AS4C8M16SA-6TCN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C8M16SA-6TCN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s) tariffCode: 85423231 DRAM-Ausführung: SDRAM rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: TSOP-II Speicherdichte: 128Mbit usEccn: EAR99 Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 166MHz Betriebstemperatur, min.: - euEccn: NLR Anzahl der Pins: 54Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 70°C Speicherkonfiguration: 8M x 16 Bit SVHC: To Be Advised |
на замовлення 92 шт: термін постачання 21-31 дні (днів) |
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AS4C8M16SA-6TCN | Alliance Memory | DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54pin TSOP II, 166 Mhz, Commercial temp - Tray |
на замовлення 186 шт: термін постачання 21-30 дні (днів) |
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AS4C8M16SA-6TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V кількість в упаковці: 1 шт |
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AS4C8M16SA-6TCNTR | Alliance Memory | DRAM SDR, 128Mb, 8M x 16, 3.3V, 54pin TSOPII, 166 Mhz,Commercial Temp(.63) Tape and Reel |
на замовлення 1470 шт: термін постачання 21-30 дні (днів) |
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AS4C8M16SA-6TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V кількість в упаковці: 1000 шт |
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AS4C8M16SA-6TIN | Alliance Memory | DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54pin TSOP II, 166 Mhz, Industrial temp - Tray |
на замовлення 2222 шт: термін постачання 21-30 дні (днів) |
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AS4C8M16SA-6TIN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C8M16SA-6TIN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s) tariffCode: 85423231 DRAM-Ausführung: SDRAM rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: TSOP-II Speicherdichte: 128Mbit usEccn: EAR99 Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 166MHz Betriebstemperatur, min.: -40°C euEccn: NLR Anzahl der Pins: 54Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 85°C Speicherkonfiguration: 8M x 16 Bit SVHC: To Be Advised |
на замовлення 67 шт: термін постачання 21-31 дні (днів) |
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AS4C8M16SA-6TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Access time: 5.4ns Case: TSOP54 II Kind of interface: parallel Mounting: SMD Kind of package: in-tray Operating temperature: -40...85°C Clock frequency: 166MHz Operating voltage: 3.3V кількість в упаковці: 1 шт |
на замовлення 540 шт: термін постачання 14-21 дні (днів) |
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AS4C8M16SA-6TINTR | Alliance Memory | DRAM SDR, 128Mb, 8M x 16, 3.3V, 54pin TSOPII, 166 Mhz, industrial temp(.63) Tape and Reel |
на замовлення 517 шт: термін постачання 21-30 дні (днів) |
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AS4C8M16SA-6TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V кількість в упаковці: 1000 шт |
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AS4C8M16SA-7BCN | Alliance Memory | DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54pin BGA, 143 Mhz, Commercial Temp - Tray |
на замовлення 446 шт: термін постачання 21-30 дні (днів) |
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AS4C8M16SA-7BCN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C8M16SA-7BCN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 143 MHz, TFBGA, 54 Pin(s) tariffCode: 85423231 DRAM-Ausführung: SDRAM rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: TFBGA Speicherdichte: 128Mbit usEccn: EAR99 Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 143MHz Betriebstemperatur, min.: - euEccn: NLR Anzahl der Pins: 54Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 70°C Speicherkonfiguration: 8M x 16 Bit SVHC: To Be Advised |
на замовлення 216 шт: термін постачання 21-31 дні (днів) |
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AS4C8M16SA-7BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; FBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 143MHz Access time: 5.4ns Case: FBGA54 Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Operating voltage: 3.3V кількість в упаковці: 348 шт |
товар відсутній |
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AS4C8M16SA-7BCNTR | Alliance Memory | DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54pin BGA, 143 Mhz, Commercial Temp - Tape & Reel |
товар відсутній |
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AS4C8M16SA-7BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; FBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 143MHz Access time: 5.4ns Case: FBGA54 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V кількість в упаковці: 2500 шт |
товар відсутній |
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AS4C8M16SA-7TCN | Alliance Memory | DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54pin TSOP II, 143 Mhz, Commercial Temp - Tray |
на замовлення 3418 шт: термін постачання 21-30 дні (днів) |
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AS4C8M16SA-7TCN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C8M16SA-7TCN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s) tariffCode: 85423231 DRAM-Ausführung: SDRAM rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: TSOP-II Speicherdichte: 128Mbit usEccn: EAR99 Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 143MHz Betriebstemperatur, min.: - euEccn: NLR Anzahl der Pins: 54Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 70°C Speicherkonfiguration: 8M x 16 Bit SVHC: To Be Advised |
на замовлення 86 шт: термін постачання 21-31 дні (днів) |
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AS4C8M16SA-7TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Access time: 5.4ns Case: TSOP54 II Kind of interface: parallel Mounting: SMD Kind of package: in-tray Operating temperature: 0...70°C Clock frequency: 143MHz Operating voltage: 3.3V кількість в упаковці: 1 шт |
на замовлення 464 шт: термін постачання 14-21 дні (днів) |
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AS4C8M16SA-7TCN | Alliance Memory | Синхронна динамічна енергозалежна пам'ять SDRAM; Uживл, В = 3,0...3,6; Інтерфейс = Паралельний; Об. пам. = 128 Мбіт; Орг. пам. = 8М х 16; Тдост/Частота = 143 МГц; Тексп, °С = 0...+70; tдост = 5,4 нс; TSOP II-54 |
на замовлення 1 шт: термін постачання 3-4 дні (днів) |
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AS4C8M16SA-7TCNTR | Alliance Memory | DRAM SDR, 128Mb, 8M x 16, 3.3V, 54ppin TSOP II, 143 Mhz, commercial Temp(.63) Tape and Reel, A Die |
на замовлення 2393 шт: термін постачання 21-30 дні (днів) |
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AS4C8M16SA-7TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 143MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V кількість в упаковці: 1000 шт |
товар відсутній |
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AS4C8M32MD2A-25BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx32bit; 1.7÷1.95V; 400MHz; 5.5ns; FBGA134 Type of integrated circuit: DRAM memory Kind of memory: LPDDR2; SDRAM Memory organisation: 8Mx32bit Clock frequency: 400MHz Access time: 5.5ns Case: FBGA134 Memory capacity: 256Mb Mounting: SMD Operating temperature: -25...85°C Kind of interface: parallel Operating voltage: 1.7...1.95V |
товар відсутній |
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AS4C8M32MD2A-25BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx32bit; 1.2÷1.8V; 400MHz; 18ns; FBGA134; reel Type of integrated circuit: DRAM memory Kind of memory: LPDDR2; SDRAM Memory organisation: 8Mx32bit Clock frequency: 400MHz Access time: 18ns Case: FBGA134 Memory capacity: 256Mb Mounting: SMD Operating temperature: -25...85°C Kind of package: reel Operating voltage: 1.2...1.8V |
товар відсутній |
AS4C8M16D1A-5TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; TSOP66 II; -40÷85°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; TSOP66 II; -40÷85°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C8M16MSA-6BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 1.7V; 166MHz; 6ns; FBGA54; -40÷85°C
Case: FBGA54
Operating temperature: -40...85°C
Mounting: SMD
Access time: 6ns
Kind of package: in-tray
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 8Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 1.7V; 166MHz; 6ns; FBGA54; -40÷85°C
Case: FBGA54
Operating temperature: -40...85°C
Mounting: SMD
Access time: 6ns
Kind of package: in-tray
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 8Mx16bit
товар відсутній
AS4C8M16MSA-6BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 1.7V; 166MHz; 6ns; FBGA54; -40÷85°C; reel
Case: FBGA54
Operating temperature: -40...85°C
Mounting: SMD
Access time: 6ns
Kind of package: reel
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 8Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 1.7V; 166MHz; 6ns; FBGA54; -40÷85°C; reel
Case: FBGA54
Operating temperature: -40...85°C
Mounting: SMD
Access time: 6ns
Kind of package: reel
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 8Mx16bit
товар відсутній
AS4C8M16MSA-6BIN |
Виробник: Alliance Memory
DRAM 128M 166MHz 8Mx16 Mobile LP SDRAM IT
DRAM 128M 166MHz 8Mx16 Mobile LP SDRAM IT
на замовлення 180 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 474.16 грн |
10+ | 426.03 грн |
100+ | 323.7 грн |
250+ | 322.26 грн |
500+ | 302.12 грн |
957+ | 289.89 грн |
2552+ | 280.54 грн |
AS4C8M16MSA-6BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 1.7V; 166MHz; 6ns; FBGA54; -40÷85°C
Case: FBGA54
Operating temperature: -40...85°C
Mounting: SMD
Access time: 6ns
Kind of package: in-tray
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 8Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 1.7V; 166MHz; 6ns; FBGA54; -40÷85°C
Case: FBGA54
Operating temperature: -40...85°C
Mounting: SMD
Access time: 6ns
Kind of package: in-tray
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 8Mx16bit
товар відсутній
AS4C8M16MSA-6BINTR |
Виробник: Alliance Memory
DRAM 128M 166MHz 8Mx16 Mobile LP SDRAM IT
DRAM 128M 166MHz 8Mx16 Mobile LP SDRAM IT
товар відсутній
AS4C8M16MSA-6BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 1.7V; 166MHz; 6ns; FBGA54; -40÷85°C; reel
Case: FBGA54
Operating temperature: -40...85°C
Mounting: SMD
Access time: 6ns
Kind of package: reel
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 8Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 1.7V; 166MHz; 6ns; FBGA54; -40÷85°C; reel
Case: FBGA54
Operating temperature: -40...85°C
Mounting: SMD
Access time: 6ns
Kind of package: reel
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 8Mx16bit
товар відсутній
AS4C8M16S-6TCN |
Виробник: Alliance Memory
DRAM 128M SDRAM 8M X 16 166MHz
DRAM 128M SDRAM 8M X 16 166MHz
на замовлення 457 шт:
термін постачання 21-30 дні (днів)AS4C8M16SA-6BAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-6BANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-6BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-6BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-6TAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-6TANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-6TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-6TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-6TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Access time: 5.4ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Kind of package: in-tray
Operating temperature: -40...85°C
Clock frequency: 166MHz
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Access time: 5.4ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Kind of package: in-tray
Operating temperature: -40...85°C
Clock frequency: 166MHz
Operating voltage: 3.3V
на замовлення 540 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 296.15 грн |
5+ | 200.06 грн |
12+ | 188.82 грн |
108+ | 182.83 грн |
AS4C8M16SA-6TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-7BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-7BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-7TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Access time: 5.4ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Kind of package: in-tray
Operating temperature: 0...70°C
Clock frequency: 143MHz
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Access time: 5.4ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Kind of package: in-tray
Operating temperature: 0...70°C
Clock frequency: 143MHz
Operating voltage: 3.3V
на замовлення 464 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 208.19 грн |
3+ | 187.33 грн |
10+ | 177.59 грн |
25+ | 167.84 грн |
108+ | 161.85 грн |
216+ | 158.85 грн |
AS4C8M16SA-7TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-6BAN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C8M16SA-6BAN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 166 MHz, FBGA, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: FBGA
Speicherdichte: 128Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 105°C
Speicherkonfiguration: 8M x 16 Bit
SVHC: To Be Advised
Description: ALLIANCE MEMORY - AS4C8M16SA-6BAN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 166 MHz, FBGA, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: FBGA
Speicherdichte: 128Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 105°C
Speicherkonfiguration: 8M x 16 Bit
SVHC: To Be Advised
на замовлення 303 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 447.05 грн |
10+ | 322.78 грн |
25+ | 317.13 грн |
50+ | 289.23 грн |
100+ | 262.14 грн |
250+ | 257.3 грн |
AS4C8M16SA-6BAN |
Виробник: Alliance Memory
DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54ball BGA, 166 Mhz, Automotive Temp - Tray
DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54ball BGA, 166 Mhz, Automotive Temp - Tray
на замовлення 225 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 418.77 грн |
10+ | 329.24 грн |
250+ | 285.58 грн |
348+ | 266.87 грн |
1044+ | 255.36 грн |
2784+ | 251.05 грн |
5220+ | 244.57 грн |
AS4C8M16SA-6BAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 348 шт
товар відсутній
AS4C8M16SA-6BANTR |
Виробник: Alliance Memory
DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54ball BGA, 166 Mhz, Automotive Temp - Tape & Reel
DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54ball BGA, 166 Mhz, Automotive Temp - Tape & Reel
товар відсутній
AS4C8M16SA-6BANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 2500 шт
товар відсутній
AS4C8M16SA-6BIN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C8M16SA-6BIN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 166 MHz, TFBGA, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TFBGA
Speicherdichte: 128Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 8M x 16 Bit
SVHC: To Be Advised
Description: ALLIANCE MEMORY - AS4C8M16SA-6BIN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 166 MHz, TFBGA, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TFBGA
Speicherdichte: 128Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 8M x 16 Bit
SVHC: To Be Advised
на замовлення 268 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 426.87 грн |
10+ | 309.06 грн |
25+ | 308.25 грн |
50+ | 285.49 грн |
100+ | 262.83 грн |
250+ | 245.54 грн |
AS4C8M16SA-6BIN |
Виробник: Alliance Memory
DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54ball BGA, 166 Mhz, Industrial Temp - Tray
DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54ball BGA, 166 Mhz, Industrial Temp - Tray
на замовлення 4724 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 398.63 грн |
10+ | 313.52 грн |
250+ | 271.91 грн |
348+ | 253.92 грн |
1044+ | 243.85 грн |
2784+ | 235.94 грн |
5220+ | 215.08 грн |
AS4C8M16SA-6BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 348 шт
товар відсутній
AS4C8M16SA-6BINTR |
Виробник: Alliance Memory
DRAM
DRAM
на замовлення 3109 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 434.72 грн |
10+ | 392.11 грн |
25+ | 333.77 грн |
50+ | 331.61 грн |
100+ | 297.8 грн |
250+ | 296.37 грн |
500+ | 277.66 грн |
AS4C8M16SA-6BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 2500 шт
товар відсутній
AS4C8M16SA-6TAN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C8M16SA-6TAN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 128Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 105°C
Speicherkonfiguration: 8M x 16 Bit
SVHC: To Be Advised
Description: ALLIANCE MEMORY - AS4C8M16SA-6TAN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 128Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 105°C
Speicherkonfiguration: 8M x 16 Bit
SVHC: To Be Advised
на замовлення 101 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 269.52 грн |
10+ | 221.1 грн |
25+ | 220.3 грн |
50+ | 203.81 грн |
100+ | 187.44 грн |
AS4C8M16SA-6TAN |
Виробник: Alliance Memory
DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54pin TSOP II, 166 Mhz, automotive temp - Tray
DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54pin TSOP II, 166 Mhz, automotive temp - Tray
на замовлення 102 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 248.41 грн |
10+ | 215.91 грн |
108+ | 187.03 грн |
AS4C8M16SA-6TAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
товар відсутній
AS4C8M16SA-6TANTR |
Виробник: Alliance Memory
DRAM SDR, 128Mb, 8M x 16, 3.3V, 54pin TSOP II, 166 Mhz, automotive temp(.63), T&R
DRAM SDR, 128Mb, 8M x 16, 3.3V, 54pin TSOP II, 166 Mhz, automotive temp(.63), T&R
товар відсутній
AS4C8M16SA-6TANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
товар відсутній
AS4C8M16SA-6TCN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C8M16SA-6TCN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 128Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 70°C
Speicherkonfiguration: 8M x 16 Bit
SVHC: To Be Advised
Description: ALLIANCE MEMORY - AS4C8M16SA-6TCN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 128Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 70°C
Speicherkonfiguration: 8M x 16 Bit
SVHC: To Be Advised
на замовлення 92 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 275.98 грн |
10+ | 223.52 грн |
25+ | 212.23 грн |
50+ | 186.58 грн |
AS4C8M16SA-6TCN |
Виробник: Alliance Memory
DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54pin TSOP II, 166 Mhz, Commercial temp - Tray
DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54pin TSOP II, 166 Mhz, Commercial temp - Tray
на замовлення 186 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 258.48 грн |
10+ | 228.32 грн |
108+ | 172.64 грн |
216+ | 171.92 грн |
540+ | 158.97 грн |
2592+ | 156.81 грн |
5076+ | 152.5 грн |
AS4C8M16SA-6TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
товар відсутній
AS4C8M16SA-6TCNTR |
Виробник: Alliance Memory
DRAM SDR, 128Mb, 8M x 16, 3.3V, 54pin TSOPII, 166 Mhz,Commercial Temp(.63) Tape and Reel
DRAM SDR, 128Mb, 8M x 16, 3.3V, 54pin TSOPII, 166 Mhz,Commercial Temp(.63) Tape and Reel
на замовлення 1470 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 262.68 грн |
10+ | 235.76 грн |
100+ | 178.39 грн |
250+ | 177.68 грн |
500+ | 171.2 грн |
1000+ | 162.57 грн |
2000+ | 161.85 грн |
AS4C8M16SA-6TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
товар відсутній
AS4C8M16SA-6TIN |
Виробник: Alliance Memory
DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54pin TSOP II, 166 Mhz, Industrial temp - Tray
DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54pin TSOP II, 166 Mhz, Industrial temp - Tray
на замовлення 2222 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 319.74 грн |
10+ | 286.22 грн |
108+ | 211.48 грн |
540+ | 197.82 грн |
2592+ | 195.66 грн |
5076+ | 192.78 грн |
10044+ | 191.34 грн |
AS4C8M16SA-6TIN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C8M16SA-6TIN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 128Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 8M x 16 Bit
SVHC: To Be Advised
Description: ALLIANCE MEMORY - AS4C8M16SA-6TIN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 128Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 8M x 16 Bit
SVHC: To Be Advised
на замовлення 67 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 351.83 грн |
10+ | 285.66 грн |
25+ | 271.13 грн |
50+ | 239.03 грн |
AS4C8M16SA-6TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Access time: 5.4ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Kind of package: in-tray
Operating temperature: -40...85°C
Clock frequency: 166MHz
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Access time: 5.4ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Kind of package: in-tray
Operating temperature: -40...85°C
Clock frequency: 166MHz
Operating voltage: 3.3V
кількість в упаковці: 1 шт
на замовлення 540 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 355.38 грн |
5+ | 249.31 грн |
12+ | 226.59 грн |
108+ | 219.4 грн |
AS4C8M16SA-6TINTR |
Виробник: Alliance Memory
DRAM SDR, 128Mb, 8M x 16, 3.3V, 54pin TSOPII, 166 Mhz, industrial temp(.63) Tape and Reel
DRAM SDR, 128Mb, 8M x 16, 3.3V, 54pin TSOPII, 166 Mhz, industrial temp(.63) Tape and Reel
на замовлення 517 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 328.98 грн |
10+ | 293.67 грн |
100+ | 222.99 грн |
250+ | 222.27 грн |
500+ | 214.36 грн |
1000+ | 200.69 грн |
2000+ | 199.97 грн |
AS4C8M16SA-6TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
товар відсутній
AS4C8M16SA-7BCN |
Виробник: Alliance Memory
DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54pin BGA, 143 Mhz, Commercial Temp - Tray
DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54pin BGA, 143 Mhz, Commercial Temp - Tray
на замовлення 446 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 360.87 грн |
10+ | 322.62 грн |
100+ | 244.57 грн |
250+ | 243.85 грн |
348+ | 234.5 грн |
1044+ | 223.71 грн |
2784+ | 212.2 грн |
AS4C8M16SA-7BCN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C8M16SA-7BCN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 143 MHz, TFBGA, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TFBGA
Speicherdichte: 128Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Betriebstemperatur, min.: -
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 70°C
Speicherkonfiguration: 8M x 16 Bit
SVHC: To Be Advised
Description: ALLIANCE MEMORY - AS4C8M16SA-7BCN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 143 MHz, TFBGA, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TFBGA
Speicherdichte: 128Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Betriebstemperatur, min.: -
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 70°C
Speicherkonfiguration: 8M x 16 Bit
SVHC: To Be Advised
на замовлення 216 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 392.98 грн |
10+ | 281.62 грн |
25+ | 280.82 грн |
50+ | 260.01 грн |
100+ | 239.32 грн |
AS4C8M16SA-7BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 348 шт
товар відсутній
AS4C8M16SA-7BCNTR |
Виробник: Alliance Memory
DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54pin BGA, 143 Mhz, Commercial Temp - Tape & Reel
DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54pin BGA, 143 Mhz, Commercial Temp - Tape & Reel
товар відсутній
AS4C8M16SA-7BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 2500 шт
товар відсутній
AS4C8M16SA-7TCN |
Виробник: Alliance Memory
DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54pin TSOP II, 143 Mhz, Commercial Temp - Tray
DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54pin TSOP II, 143 Mhz, Commercial Temp - Tray
на замовлення 3418 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 261.84 грн |
10+ | 228.32 грн |
108+ | 176.24 грн |
216+ | 175.52 грн |
540+ | 161.85 грн |
1080+ | 160.41 грн |
2592+ | 158.97 грн |
AS4C8M16SA-7TCN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C8M16SA-7TCN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 128Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Betriebstemperatur, min.: -
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 70°C
Speicherkonfiguration: 8M x 16 Bit
SVHC: To Be Advised
Description: ALLIANCE MEMORY - AS4C8M16SA-7TCN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 128Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Betriebstemperatur, min.: -
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 70°C
Speicherkonfiguration: 8M x 16 Bit
SVHC: To Be Advised
на замовлення 86 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 279.2 грн |
10+ | 223.52 грн |
25+ | 213.84 грн |
50+ | 188.82 грн |
AS4C8M16SA-7TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Access time: 5.4ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Kind of package: in-tray
Operating temperature: 0...70°C
Clock frequency: 143MHz
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Access time: 5.4ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Kind of package: in-tray
Operating temperature: 0...70°C
Clock frequency: 143MHz
Operating voltage: 3.3V
кількість в упаковці: 1 шт
на замовлення 464 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 249.83 грн |
3+ | 233.44 грн |
10+ | 213.1 грн |
25+ | 201.41 грн |
108+ | 194.22 грн |
216+ | 190.62 грн |
AS4C8M16SA-7TCN |
Виробник: Alliance Memory
Синхронна динамічна енергозалежна пам'ять SDRAM; Uживл, В = 3,0...3,6; Інтерфейс = Паралельний; Об. пам. = 128 Мбіт; Орг. пам. = 8М х 16; Тдост/Частота = 143 МГц; Тексп, °С = 0...+70; tдост = 5,4 нс; TSOP II-54
Синхронна динамічна енергозалежна пам'ять SDRAM; Uживл, В = 3,0...3,6; Інтерфейс = Паралельний; Об. пам. = 128 Мбіт; Орг. пам. = 8М х 16; Тдост/Частота = 143 МГц; Тексп, °С = 0...+70; tдост = 5,4 нс; TSOP II-54
на замовлення 1 шт:
термін постачання 3-4 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 624 грн |
10+ | 208.31 грн |
100+ | 193.44 грн |
AS4C8M16SA-7TCNTR |
Виробник: Alliance Memory
DRAM SDR, 128Mb, 8M x 16, 3.3V, 54ppin TSOP II, 143 Mhz, commercial Temp(.63) Tape and Reel, A Die
DRAM SDR, 128Mb, 8M x 16, 3.3V, 54ppin TSOP II, 143 Mhz, commercial Temp(.63) Tape and Reel, A Die
на замовлення 2393 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 261.84 грн |
10+ | 234.93 грн |
100+ | 177.68 грн |
250+ | 176.96 грн |
500+ | 170.48 грн |
1000+ | 153.22 грн |
2000+ | 151.78 грн |
AS4C8M16SA-7TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
товар відсутній
AS4C8M32MD2A-25BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx32bit; 1.7÷1.95V; 400MHz; 5.5ns; FBGA134
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR2; SDRAM
Memory organisation: 8Mx32bit
Clock frequency: 400MHz
Access time: 5.5ns
Case: FBGA134
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -25...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx32bit; 1.7÷1.95V; 400MHz; 5.5ns; FBGA134
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR2; SDRAM
Memory organisation: 8Mx32bit
Clock frequency: 400MHz
Access time: 5.5ns
Case: FBGA134
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -25...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
товар відсутній
AS4C8M32MD2A-25BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx32bit; 1.2÷1.8V; 400MHz; 18ns; FBGA134; reel
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR2; SDRAM
Memory organisation: 8Mx32bit
Clock frequency: 400MHz
Access time: 18ns
Case: FBGA134
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -25...85°C
Kind of package: reel
Operating voltage: 1.2...1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx32bit; 1.2÷1.8V; 400MHz; 18ns; FBGA134; reel
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR2; SDRAM
Memory organisation: 8Mx32bit
Clock frequency: 400MHz
Access time: 18ns
Case: FBGA134
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -25...85°C
Kind of package: reel
Operating voltage: 1.2...1.8V
товар відсутній