Продукція > YANGJIE TECHNOLOGY > Всі товари виробника YANGJIE TECHNOLOGY (4545) > Сторінка 73 з 76
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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YBSM4006 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 600V; If: 4A; Ifsm: 120A; YBS3; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 4A Max. forward impulse current: 120A Case: YBS3 Electrical mounting: SMT Kind of package: reel; tape |
на замовлення 1612 шт: термін постачання 21-30 дні (днів) |
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YBSM4006 | Yangjie Technology | Description: YBSM 600V 4.0A Diodes Bridge R |
на замовлення 180000 шт: термін постачання 21-31 дні (днів) |
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YBSM4006 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 600V; If: 4A; Ifsm: 120A; YBS3; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 4A Max. forward impulse current: 120A Case: YBS3 Electrical mounting: SMT Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 1612 шт: термін постачання 14-21 дні (днів) |
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YBSM4008 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 800V; If: 4A; Ifsm: 120A; YBS3; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 4A Max. forward impulse current: 120A Case: YBS3 Electrical mounting: SMT Kind of package: reel; tape |
на замовлення 2561 шт: термін постачання 21-30 дні (днів) |
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YBSM4008 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 800V; If: 4A; Ifsm: 120A; YBS3; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 4A Max. forward impulse current: 120A Case: YBS3 Electrical mounting: SMT Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 2561 шт: термін постачання 14-21 дні (днів) |
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YBSM4010 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 1kV; If: 4A; Ifsm: 120A; YBS3; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 4A Max. forward impulse current: 120A Case: YBS3 Electrical mounting: SMT Kind of package: reel; tape |
на замовлення 1116 шт: термін постачання 21-30 дні (днів) |
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YBSM4010 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 1kV; If: 4A; Ifsm: 120A; YBS3; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 4A Max. forward impulse current: 120A Case: YBS3 Electrical mounting: SMT Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 1116 шт: термін постачання 14-21 дні (днів) |
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YBSM60005 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 50V; If: 6A; Ifsm: 150A; YBS3; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 6A Max. forward impulse current: 150A Case: YBS3 Electrical mounting: SMT Kind of package: reel; tape |
на замовлення 1797 шт: термін постачання 21-30 дні (днів) |
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YBSM60005 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 50V; If: 6A; Ifsm: 150A; YBS3; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 6A Max. forward impulse current: 150A Case: YBS3 Electrical mounting: SMT Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 1797 шт: термін постачання 14-21 дні (днів) |
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YBSM6001 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 100V; If: 6A; Ifsm: 150A; YBS3; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 100V Load current: 6A Max. forward impulse current: 150A Case: YBS3 Electrical mounting: SMT Kind of package: reel; tape |
на замовлення 644 шт: термін постачання 21-30 дні (днів) |
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YBSM6001 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 100V; If: 6A; Ifsm: 150A; YBS3; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 100V Load current: 6A Max. forward impulse current: 150A Case: YBS3 Electrical mounting: SMT Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 644 шт: термін постачання 14-21 дні (днів) |
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YBSM6002 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 200V; If: 6A; Ifsm: 150A; YBS3; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 6A Max. forward impulse current: 150A Case: YBS3 Electrical mounting: SMT Kind of package: reel; tape |
на замовлення 1549 шт: термін постачання 21-30 дні (днів) |
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YBSM6002 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 200V; If: 6A; Ifsm: 150A; YBS3; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 6A Max. forward impulse current: 150A Case: YBS3 Electrical mounting: SMT Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 1549 шт: термін постачання 14-21 дні (днів) |
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YBSM6004 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 400V; If: 6A; Ifsm: 150A; YBS3; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 6A Max. forward impulse current: 150A Case: YBS3 Electrical mounting: SMT Kind of package: reel; tape |
на замовлення 2536 шт: термін постачання 21-30 дні (днів) |
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YBSM6004 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 400V; If: 6A; Ifsm: 150A; YBS3; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 6A Max. forward impulse current: 150A Case: YBS3 Electrical mounting: SMT Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 2536 шт: термін постачання 14-21 дні (днів) |
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YBSM6006 | Yangjie Technology |
Description: YBSM 600V 6.0A Diodes Bridge R Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 180000 шт: термін постачання 21-31 дні (днів) |
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YBSM6006 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 600V; If: 6A; Ifsm: 150A; YBS3; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 6A Max. forward impulse current: 150A Case: YBS3 Electrical mounting: SMT Kind of package: reel; tape |
на замовлення 554 шт: термін постачання 21-30 дні (днів) |
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YBSM6006 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 600V; If: 6A; Ifsm: 150A; YBS3; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 6A Max. forward impulse current: 150A Case: YBS3 Electrical mounting: SMT Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 554 шт: термін постачання 14-21 дні (днів) |
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YBSM6008 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 800V; If: 6A; Ifsm: 150A; YBS3; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 6A Max. forward impulse current: 150A Case: YBS3 Electrical mounting: SMT Kind of package: reel; tape |
на замовлення 2781 шт: термін постачання 21-30 дні (днів) |
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YBSM6008 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 800V; If: 6A; Ifsm: 150A; YBS3; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 6A Max. forward impulse current: 150A Case: YBS3 Electrical mounting: SMT Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 2781 шт: термін постачання 14-21 дні (днів) |
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YBSM6010 | Yangjie Technology |
![]() Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 180000 шт: термін постачання 21-31 дні (днів) |
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YBSM6010 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 1kV; If: 6A; Ifsm: 150A; YBS3; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 6A Max. forward impulse current: 150A Case: YBS3 Electrical mounting: SMT Kind of package: reel; tape |
на замовлення 1332 шт: термін постачання 21-30 дні (днів) |
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YBSM6010 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 1kV; If: 6A; Ifsm: 150A; YBS3; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 6A Max. forward impulse current: 150A Case: YBS3 Electrical mounting: SMT Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 1332 шт: термін постачання 14-21 дні (днів) |
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YJ10N60CZ | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 178W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Pulsed drain current: 40A Power dissipation: 178W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: max. 1.33mm |
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YJ10N60CZ | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 178W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Pulsed drain current: 40A Power dissipation: 178W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: max. 1.33mm кількість в упаковці: 1 шт |
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YJ10N65CI | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 40A; 50W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 40A Power dissipation: 50W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 860mΩ Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhanced |
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YJ10N65CI | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 40A; 50W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 40A Power dissipation: 50W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 860mΩ Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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YJ12N65CZ | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11.5A; Idm: 46A; 240W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 11.5A Pulsed drain current: 46A Power dissipation: 240W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: max. 1.33mm |
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YJ2N60CI | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 23W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2A Pulsed drain current: 8A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhanced |
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YJ2N60CI | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 23W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2A Pulsed drain current: 8A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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YJ2N60CP | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 44W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2A Pulsed drain current: 8A Power dissipation: 44W Case: TO252 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
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YJ2N60CP | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 44W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2A Pulsed drain current: 8A Power dissipation: 44W Case: TO252 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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YJ2N65CI | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 23W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Pulsed drain current: 8A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 4.7Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhanced |
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YJ2N65CI | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 23W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Pulsed drain current: 8A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 4.7Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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YJ2N65CP | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 44W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Pulsed drain current: 8A Power dissipation: 44W Case: TO252 Gate-source voltage: ±20V On-state resistance: 4.7Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
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YJ2N65CP | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 44W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Pulsed drain current: 8A Power dissipation: 44W Case: TO252 Gate-source voltage: ±20V On-state resistance: 4.7Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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YJ2N65CZ | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 54W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Pulsed drain current: 8A Power dissipation: 54W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.7Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: max. 1.33mm |
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YJ2N65CZ | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 54W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Pulsed drain current: 8A Power dissipation: 54W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.7Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: max. 1.33mm кількість в упаковці: 1 шт |
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YJ4N60CI | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4A Pulsed drain current: 16A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced |
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YJ4N60CP | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 51W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4A Pulsed drain current: 16A Power dissipation: 51W Case: TO252 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
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YJ4N60CP | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 51W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4A Pulsed drain current: 16A Power dissipation: 51W Case: TO252 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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YJ4N65CP | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 51W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Pulsed drain current: 16A Power dissipation: 51W Case: TO252 Gate-source voltage: ±20V On-state resistance: 2.6Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
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YJ4N65CP | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 51W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Pulsed drain current: 16A Power dissipation: 51W Case: TO252 Gate-source voltage: ±20V On-state resistance: 2.6Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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YJ4N65CZ | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 100W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Pulsed drain current: 16A Power dissipation: 100W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.6Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: max. 1.33mm |
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YJ4N65CZ | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 100W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Pulsed drain current: 16A Power dissipation: 100W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.6Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: max. 1.33mm кількість в упаковці: 1 шт |
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YJ4N70CI | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 16A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4A Pulsed drain current: 16A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 3.2Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced |
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YJ4N70CI | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 16A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4A Pulsed drain current: 16A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 3.2Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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YJ7N60CI | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 25A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 25A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1.3Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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YJ7N60CI | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 25A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 25A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1.3Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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YJ7N65CI | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 25A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Pulsed drain current: 25A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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YJ7N65CI | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 25A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Pulsed drain current: 25A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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YJ7N80CI | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 28A; 49W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Pulsed drain current: 28A Power dissipation: 49W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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YJ7N80CI | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 28A; 49W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Pulsed drain current: 28A Power dissipation: 49W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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YJA3134KA | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 1000000 шт: термін постачання 21-31 дні (днів) |
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YJB150N06BQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 80000 шт: термін постачання 21-31 дні (днів) |
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YJB150N06BQ | YANGJIE TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 105A; 94W Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 105A Pulsed drain current: 500A Power dissipation: 94W Case: TO263 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 69nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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YJB150N06BQ | YANGJIE TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 105A; 94W Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 105A Pulsed drain current: 500A Power dissipation: 94W Case: TO263 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 69nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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YJD112010DG1 | Yangjie Technology |
Description: TO-252 1200V 16A Diodes Rectif Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 250000 шт: термін постачання 21-31 дні (днів) |
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YJD120N04A | Yangjie Technology |
Description: TO-252 N 40V 120A Transistors F Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 250000 шт: термін постачання 21-31 дні (днів) |
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YJD15N10A | Yangjie Technology |
Description: TO-252 N 100V 15A Transistors F Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 250000 шт: термін постачання 21-31 дні (днів) |
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YBSM4006 |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 4A; Ifsm: 120A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 120A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 4A; Ifsm: 120A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 120A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 1612 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
16+ | 25.03 грн |
26+ | 14.34 грн |
78+ | 10.88 грн |
213+ | 10.29 грн |
YBSM4006 |
Виробник: Yangjie Technology
Description: YBSM 600V 4.0A Diodes Bridge R
Description: YBSM 600V 4.0A Diodes Bridge R
на замовлення 180000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1800+ | 14.03 грн |
9000+ | 12.76 грн |
18000+ | 12.01 грн |
36000+ | 10.57 грн |
72000+ | 9.48 грн |
180000+ | 8.77 грн |
YBSM4006 |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 4A; Ifsm: 120A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 120A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 4A; Ifsm: 120A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 120A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 1612 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.04 грн |
25+ | 17.87 грн |
78+ | 13.06 грн |
213+ | 12.34 грн |
YBSM4008 |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 4A; Ifsm: 120A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 120A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 4A; Ifsm: 120A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 120A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 2561 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
18+ | 22.15 грн |
30+ | 12.17 грн |
95+ | 8.84 грн |
261+ | 8.4 грн |
YBSM4008 |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 4A; Ifsm: 120A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 120A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 4A; Ifsm: 120A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 120A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 2561 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 26.58 грн |
25+ | 15.16 грн |
95+ | 10.6 грн |
261+ | 10.08 грн |
YBSM4010 |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 4A; Ifsm: 120A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 120A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 4A; Ifsm: 120A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 120A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 1116 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 19.58 грн |
34+ | 10.72 грн |
100+ | 9.41 грн |
107+ | 7.82 грн |
295+ | 7.39 грн |
YBSM4010 |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 4A; Ifsm: 120A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 120A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 4A; Ifsm: 120A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 120A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 1116 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 23.49 грн |
25+ | 13.36 грн |
100+ | 11.3 грн |
107+ | 9.39 грн |
295+ | 8.86 грн |
YBSM60005 |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 1797 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
17+ | 23.63 грн |
25+ | 16.15 грн |
69+ | 12.38 грн |
188+ | 11.66 грн |
YBSM60005 |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 1797 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 28.36 грн |
25+ | 20.12 грн |
69+ | 14.86 грн |
188+ | 13.99 грн |
YBSM6001 |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 644 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
22+ | 18.17 грн |
30+ | 12.38 грн |
87+ | 9.85 грн |
239+ | 9.27 грн |
YBSM6001 |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 644 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 21.81 грн |
25+ | 15.43 грн |
87+ | 11.82 грн |
239+ | 11.12 грн |
1800+ | 10.95 грн |
YBSM6002 |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 1549 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
22+ | 18.17 грн |
30+ | 12.38 грн |
87+ | 9.85 грн |
239+ | 9.27 грн |
YBSM6002 |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 1549 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 21.81 грн |
25+ | 15.43 грн |
87+ | 11.82 грн |
239+ | 11.12 грн |
1800+ | 10.95 грн |
YBSM6004 |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 400V; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 400V; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 2536 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
22+ | 17.94 грн |
30+ | 12.31 грн |
87+ | 9.78 грн |
239+ | 9.27 грн |
1800+ | 9.12 грн |
YBSM6004 |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 400V; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 400V; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 2536 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 21.52 грн |
25+ | 15.34 грн |
87+ | 11.73 грн |
239+ | 11.12 грн |
1800+ | 10.95 грн |
YBSM6006 |
Виробник: Yangjie Technology
Description: YBSM 600V 6.0A Diodes Bridge R
Packaging: Tape & Reel (TR)
Part Status: Active
Description: YBSM 600V 6.0A Diodes Bridge R
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 180000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1800+ | 18.35 грн |
9000+ | 16.66 грн |
18000+ | 15.71 грн |
36000+ | 13.8 грн |
72000+ | 12.44 грн |
180000+ | 11.49 грн |
YBSM6006 |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 554 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 20.04 грн |
27+ | 13.83 грн |
79+ | 10.72 грн |
216+ | 10.14 грн |
YBSM6006 |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 554 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 24.05 грн |
25+ | 17.24 грн |
79+ | 12.86 грн |
216+ | 12.17 грн |
YBSM6008 |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 2781 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 20.51 грн |
25+ | 17.67 грн |
62+ | 13.9 грн |
169+ | 13.11 грн |
YBSM6008 |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 2781 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 24.61 грн |
25+ | 22.02 грн |
62+ | 16.69 грн |
169+ | 15.73 грн |
YBSM6010 |
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Виробник: Yangjie Technology
Description: YBS3 1000V 6.0A Diodes Bridge
Packaging: Tape & Reel (TR)
Part Status: Active
Description: YBS3 1000V 6.0A Diodes Bridge
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 180000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1800+ | 17.16 грн |
9000+ | 15.58 грн |
18000+ | 14.7 грн |
36000+ | 12.91 грн |
72000+ | 11.63 грн |
180000+ | 10.74 грн |
YBSM6010 |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 1332 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 56.15 грн |
14+ | 26.07 грн |
25+ | 15.64 грн |
76+ | 11.15 грн |
209+ | 10.5 грн |
YBSM6010 |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 1332 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 67.38 грн |
9+ | 32.49 грн |
25+ | 18.77 грн |
76+ | 13.38 грн |
209+ | 12.6 грн |
YJ10N60CZ |
Виробник: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 178W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 178W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: max. 1.33mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 178W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 178W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: max. 1.33mm
товар відсутній
YJ10N60CZ |
Виробник: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 178W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 178W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: max. 1.33mm
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 178W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 178W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: max. 1.33mm
кількість в упаковці: 1 шт
товар відсутній
YJ10N65CI |
Виробник: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 40A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 40A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
YJ10N65CI |
Виробник: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 40A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 40A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
YJ12N65CZ |
Виробник: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.5A; Idm: 46A; 240W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.5A
Pulsed drain current: 46A
Power dissipation: 240W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: max. 1.33mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.5A; Idm: 46A; 240W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.5A
Pulsed drain current: 46A
Power dissipation: 240W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: max. 1.33mm
товар відсутній
YJ2N60CI |
Виробник: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 23W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 23W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
YJ2N60CI |
Виробник: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 23W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 23W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
YJ2N60CP |
Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
YJ2N60CP |
Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
YJ2N65CI |
Виробник: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 23W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 23W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
YJ2N65CI |
Виробник: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 23W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 23W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
YJ2N65CP |
Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
YJ2N65CP |
Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
YJ2N65CZ |
Виробник: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 54W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 54W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: max. 1.33mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 54W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 54W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: max. 1.33mm
товар відсутній
YJ2N65CZ |
Виробник: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 54W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 54W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: max. 1.33mm
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 54W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 54W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: max. 1.33mm
кількість в упаковці: 1 шт
товар відсутній
YJ4N60CI |
Виробник: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
YJ4N60CP |
Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 51W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 51W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 51W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 51W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
YJ4N60CP |
Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 51W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 51W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 51W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 51W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
YJ4N65CP |
Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 51W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 51W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.6Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 51W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 51W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.6Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
YJ4N65CP |
Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 51W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 51W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.6Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 51W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 51W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.6Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
YJ4N65CZ |
Виробник: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.6Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: max. 1.33mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.6Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: max. 1.33mm
товар відсутній
YJ4N65CZ |
Виробник: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.6Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: max. 1.33mm
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.6Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: max. 1.33mm
кількість в упаковці: 1 шт
товар відсутній
YJ4N70CI |
Виробник: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 16A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 16A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
YJ4N70CI |
Виробник: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 16A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 16A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
YJ7N60CI |
Виробник: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 25A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 25A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 25A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 25A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
YJ7N60CI |
Виробник: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 25A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 25A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 25A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 25A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
YJ7N65CI |
Виробник: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 25A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 25A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 25A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 25A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
YJ7N65CI |
Виробник: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 25A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 25A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 25A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 25A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
YJ7N80CI |
Виробник: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 28A; 49W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 49W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 28A; 49W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 49W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
YJ7N80CI |
Виробник: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 28A; 49W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 49W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 28A; 49W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 49W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
YJA3134KA |
Виробник: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 1000000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 1.8 грн |
50000+ | 1.67 грн |
100000+ | 1.52 грн |
200000+ | 1.36 грн |
400000+ | 1.22 грн |
1000000+ | 1.16 грн |
YJB150N06BQ |
Виробник: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
800+ | 49.94 грн |
4000+ | 45.41 грн |
8000+ | 42.73 грн |
16000+ | 37.58 грн |
32000+ | 33.85 грн |
80000+ | 31.33 грн |
YJB150N06BQ |
![]() |
Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 105A; 94W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 105A
Pulsed drain current: 500A
Power dissipation: 94W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 105A; 94W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 105A
Pulsed drain current: 500A
Power dissipation: 94W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
YJB150N06BQ |
![]() |
Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 105A; 94W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 105A
Pulsed drain current: 500A
Power dissipation: 94W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 105A; 94W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 105A
Pulsed drain current: 500A
Power dissipation: 94W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
YJD112010DG1 |
Виробник: Yangjie Technology
Description: TO-252 1200V 16A Diodes Rectif
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TO-252 1200V 16A Diodes Rectif
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 250000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 399.33 грн |
12500+ | 363.18 грн |
25000+ | 341.82 грн |
50000+ | 300.73 грн |
100000+ | 270.62 грн |
250000+ | 250.58 грн |
YJD120N04A |
Виробник: Yangjie Technology
Description: TO-252 N 40V 120A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TO-252 N 40V 120A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 250000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 25.57 грн |
12500+ | 23.25 грн |
25000+ | 21.87 грн |
50000+ | 19.23 грн |
100000+ | 17.33 грн |
250000+ | 16.04 грн |
YJD15N10A |
Виробник: Yangjie Technology
Description: TO-252 N 100V 15A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TO-252 N 100V 15A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 250000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 14.29 грн |
12500+ | 12.96 грн |
25000+ | 12.17 грн |
50000+ | 10.74 грн |
100000+ | 9.65 грн |
250000+ | 8.97 грн |