YJ4N65CZ YANGJIE TECHNOLOGY
Виробник: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.6Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: max. 1.33mm
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.6Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: max. 1.33mm
кількість в упаковці: 1 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис YJ4N65CZ YANGJIE TECHNOLOGY
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 100W; TO220AB, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 4A, Pulsed drain current: 16A, Power dissipation: 100W, Case: TO220AB, Gate-source voltage: ±20V, On-state resistance: 2.6Ω, Mounting: THT, Gate charge: 20nC, Kind of package: tube, Kind of channel: enhanced, Heatsink thickness: max. 1.33mm, кількість в упаковці: 1 шт.
Інші пропозиції YJ4N65CZ
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
YJ4N65CZ | Виробник : YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 100W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Pulsed drain current: 16A Power dissipation: 100W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.6Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: max. 1.33mm |
товар відсутній |