Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (165406) > Сторінка 1107 з 2757
Фото | Назва | Виробник | Інформація |
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SCTH40N120G2V-7 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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SCTH40N120G2V7AG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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SCTH60N120G2-7 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar Mounting: SMD Kind of package: tape Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced кількість в упаковці: 1 шт |
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SCTH70N120G2V-7 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar Mounting: SMD Polarisation: unipolar Kind of package: tape Kind of channel: enhanced Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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SCTH90N65G2V-7 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 116A; Idm: 220A; 484W; H2PAK7 Mounting: SMD Polarisation: unipolar Gate charge: 157nC Kind of channel: enhanced Gate-source voltage: ±3.2V Pulsed drain current: 220A Case: H2PAK7 Drain-source voltage: 650V Drain current: 116A On-state resistance: 27mΩ Type of transistor: N-MOSFET Power dissipation: 484W кількість в упаковці: 1 шт |
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SCTL35N65G2V | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar Mounting: SMD Polarisation: unipolar Kind of package: tape Kind of channel: enhanced Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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SCTL90N65G2V | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar Mounting: SMD Polarisation: unipolar Kind of package: tape Kind of channel: enhanced Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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SCTW100N65G2AG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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SCTW35N65G2V | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 90A; 240W; HIP247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 45A Pulsed drain current: 90A Power dissipation: 240W Case: HIP247™ On-state resistance: 68mΩ Mounting: THT Gate charge: 73nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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SCTW35N65G2VAG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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SCTW40N120G2V | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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SCTW40N120G2VAG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 100A; 290W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 25A Pulsed drain current: 100A Power dissipation: 290W Case: HIP247™ On-state resistance: 0.195Ω Mounting: THT Gate charge: 63nC Kind of package: tube Application: automotive industry кількість в упаковці: 1 шт |
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SCTW60N120G2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced кількість в упаковці: 1 шт |
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SCTW70N120G2V | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar Mounting: THT Kind of channel: enhanced Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: tube кількість в упаковці: 1 шт |
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SCTW90N65G2V | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 90A; Idm: 220A; 565W Mounting: THT Technology: SiC Drain current: 90A Drain-source voltage: 650V Type of transistor: N-MOSFET Kind of package: tube Case: HIP247™ On-state resistance: 30mΩ Pulsed drain current: 220A Power dissipation: 565W Gate charge: 157nC Polarisation: unipolar кількість в упаковці: 1 шт |
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SCTWA10N120 | STMicroelectronics |
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SCTWA20N120 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 45A; 175W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 16A Pulsed drain current: 45A Power dissipation: 175W Case: HIP247™ On-state resistance: 0.22Ω Mounting: THT Gate charge: 45nC Kind of package: tube кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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SCTWA30N120 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 34A Pulsed drain current: 90A Power dissipation: 270W Case: HIP247™ On-state resistance: 0.1Ω Mounting: THT Gate charge: 105nC Kind of package: tube кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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SCTWA35N65G2V | STMicroelectronics |
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SCTWA35N65G2V-4 | STMicroelectronics | SCTWA35N65G2V-4 THT N channel transistors |
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SCTWA40N120G2V | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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SCTWA40N120G2V-4 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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SCTWA50N120 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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SCTWA60N120G2-4 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced кількість в упаковці: 1 шт |
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SCTWA70N120G2V-4 | STMicroelectronics | SCTWA70N120G2V-4 THT N channel transistors |
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SCTWA90N65G2V | STMicroelectronics |
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SCTWA90N65G2V-4 | STMicroelectronics |
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SD2932W | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; RF; 125V; 40A; 500W; M244; Pout: 300W Case: M244 Electrical mounting: FASTON connectors; soldering; THT Kind of package: tube Open-loop gain: 16dB Output power: 300W Power dissipation: 500W Efficiency: 60% Polarisation: unipolar Mechanical mounting: screw Kind of transistor: RF Kind of channel: enhanced Gate-source voltage: ±40V Frequency: 175MHz Drain-source voltage: 125V Drain current: 40A Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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SD2942W | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; RF; 130V; 40A; 500W; M244; Pout: 350W Case: M244 Electrical mounting: FASTON connectors; soldering; THT Kind of package: tube Open-loop gain: 17dB Output power: 350W Power dissipation: 500W Efficiency: 61% Polarisation: unipolar Mechanical mounting: screw Kind of transistor: RF Kind of channel: enhanced Gate-source voltage: ±40V Frequency: 175MHz Drain-source voltage: 130V Drain current: 40A Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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SERC816 | STMicroelectronics |
![]() Description: IC: interface; 16Mbps; 5VDC; parallel 16bit,parallel 8bit; SMD Type of integrated circuit: interface Mounting: SMD Case: PQFP100 Operating temperature: -40...85°C Supply voltage: 5V DC Interface: parallel 8bit; parallel 16bit Number of channels: 2 Data transfer rate: 16Mbps кількість в упаковці: 1 шт |
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SG2525AN | STMicroelectronics |
![]() Description: IC: driver; PWM controller; DIP16; 500mA; 0.2÷5.6V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: PWM controller Case: DIP16 Output current: 0.5A Output voltage: 0.2...5.6V Number of channels: 2 Supply voltage: 8...35V Mounting: THT кількість в упаковці: 1 шт |
на замовлення 614 шт: термін постачання 14-21 дні (днів) |
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SG2525AP | STMicroelectronics |
![]() Description: IC: driver; PWM controller; SO16; 500mA; 0.2÷5.6V; Ch: 2; Usup: 8÷35V Type of integrated circuit: driver Kind of integrated circuit: PWM controller Case: SO16 Output current: 0.5A Output voltage: 0.2...5.6V Number of channels: 2 Supply voltage: 8...35V Mounting: SMD кількість в упаковці: 1 шт |
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SG3524N | STMicroelectronics |
![]() Description: IC: driver; flyback,push-pull; PWM controller; DIP16; 100mA; Ch: 1 Type of integrated circuit: driver Topology: flyback; push-pull Kind of integrated circuit: PWM controller Case: DIP16 Output current: 0.1A Number of channels: 1 Supply voltage: 8...40V Mounting: SMD Operating temperature: 0...70°C Application: SMPS Frequency: 0.45MHz Kind of package: tube кількість в упаковці: 1 шт |
на замовлення 66 шт: термін постачання 14-21 дні (днів) |
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SG3524P | STMicroelectronics |
![]() Description: IC: driver; flyback,push-pull; PWM controller; SO16; 100mA; Ch: 1 Type of integrated circuit: driver Topology: flyback; push-pull Kind of integrated circuit: PWM controller Case: SO16 Output current: 0.1A Number of channels: 1 Supply voltage: 8...40V Mounting: SMD Operating temperature: 0...70°C Application: SMPS Frequency: 0.45MHz Kind of package: tube кількість в упаковці: 1 шт |
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SGT120R65AL | STMicroelectronics |
![]() Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 9A; Idm: 36A; 192W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 9A Pulsed drain current: 36A Power dissipation: 192W Case: PowerFLAT 5x6 Gate-source voltage: -10...7V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 3nC Kind of package: tape Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal кількість в упаковці: 1 шт |
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SLVU2.8-4A1 | STMicroelectronics |
![]() Description: Diode: TVS array; 30A; 600W; SO8; Features: ESD protection; Ch: 4 Max. off-state voltage: 2.8V Max. forward impulse current: 30A Leakage current: 0.2µA Number of channels: 4 Kind of package: reel; tape Type of diode: TVS array Features of semiconductor devices: ESD protection Peak pulse power dissipation: 0.6kW Mounting: SMD Case: SO8 кількість в упаковці: 2500 шт |
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SLVU2.8-8A1 | STMicroelectronics |
![]() Description: Diode: TVS array; 30A; 600W; SO8; Features: ESD protection; Ch: 8 Max. off-state voltage: 2.8V Max. forward impulse current: 30A Leakage current: 0.2µA Number of channels: 8 Kind of package: reel; tape Type of diode: TVS array Features of semiconductor devices: ESD protection Peak pulse power dissipation: 0.6kW Mounting: SMD Case: SO8 кількість в упаковці: 1 шт |
на замовлення 463 шт: термін постачання 14-21 дні (днів) |
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SM15T100A | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 100V; 11A; unidirectional; SMC; reel,tape Case: SMC Mounting: SMD Kind of package: reel; tape Semiconductor structure: unidirectional Max. off-state voltage: 85.5V Peak pulse power dissipation: 1.5kW Max. forward impulse current: 11A Breakdown voltage: 100V Leakage current: 1µA Type of diode: TVS кількість в упаковці: 1 шт |
на замовлення 1584 шт: термін постачання 14-21 дні (днів) |
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SM15T100CA | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 100V; 11A; bidirectional; SMC; reel,tape Case: SMC Mounting: SMD Kind of package: reel; tape Semiconductor structure: bidirectional Max. off-state voltage: 85.5V Peak pulse power dissipation: 1.5kW Max. forward impulse current: 11A Breakdown voltage: 100V Leakage current: 1µA Type of diode: TVS кількість в упаковці: 1 шт |
на замовлення 2500 шт: термін постачання 14-21 дні (днів) |
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SM15T12A | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 12V; 90A; unidirectional; SMC; reel,tape Case: SMC Peak pulse power dissipation: 1.5kW Mounting: SMD Max. off-state voltage: 10.2V Semiconductor structure: unidirectional Max. forward impulse current: 90A Breakdown voltage: 12V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS кількість в упаковці: 1 шт |
на замовлення 682 шт: термін постачання 14-21 дні (днів) |
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SM15T12CA | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 12V; 90A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 10.2V Breakdown voltage: 12V Max. forward impulse current: 90A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape кількість в упаковці: 2500 шт |
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SM15T150CA | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 150V; 7.2A; bidirectional; SMC; reel,tape Case: SMC Mounting: SMD Kind of package: reel; tape Semiconductor structure: bidirectional Max. off-state voltage: 128V Peak pulse power dissipation: 1.5kW Max. forward impulse current: 7.2A Breakdown voltage: 150V Leakage current: 1µA Type of diode: TVS кількість в упаковці: 1 шт |
на замовлення 1298 шт: термін постачання 14-21 дні (днів) |
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SM15T15A | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 15V; 71A; unidirectional; SMC; reel,tape Case: SMC Mounting: SMD Kind of package: reel; tape Semiconductor structure: unidirectional Max. off-state voltage: 12.8V Peak pulse power dissipation: 1.5kW Max. forward impulse current: 71A Breakdown voltage: 15V Leakage current: 1µA Type of diode: TVS кількість в упаковці: 1 шт |
на замовлення 1912 шт: термін постачання 14-21 дні (днів) |
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SM15T15CA | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 15V; 71A; bidirectional; SMC; reel,tape Case: SMC Mounting: SMD Kind of package: reel; tape Semiconductor structure: bidirectional Max. off-state voltage: 12.8V Peak pulse power dissipation: 1.5kW Max. forward impulse current: 71A Breakdown voltage: 15V Leakage current: 1µA Type of diode: TVS кількість в упаковці: 1 шт |
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SM15T18A | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; SMC; reel,tape Case: SMC Mounting: SMD Kind of package: reel; tape Semiconductor structure: unidirectional Max. off-state voltage: 15.3V Peak pulse power dissipation: 1.5kW Max. forward impulse current: 59.5A Breakdown voltage: 18V Leakage current: 1µA Type of diode: TVS кількість в упаковці: 1 шт |
на замовлення 1441 шт: термін постачання 14-21 дні (днів) |
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SM15T18CA | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 18V; 59.5A; bidirectional; SMC; reel,tape Case: SMC Mounting: SMD Kind of package: reel; tape Semiconductor structure: bidirectional Max. off-state voltage: 15.3V Peak pulse power dissipation: 1.5kW Max. forward impulse current: 59.5A Breakdown voltage: 18V Leakage current: 1µA Type of diode: TVS кількість в упаковці: 1 шт |
на замовлення 4269 шт: термін постачання 14-21 дні (днів) |
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SM15T200A | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 200V; 5.5A; unidirectional; SMC; reel,tape Case: SMC Mounting: SMD Kind of package: reel; tape Semiconductor structure: unidirectional Max. off-state voltage: 171V Peak pulse power dissipation: 1.5kW Max. forward impulse current: 5.5A Breakdown voltage: 200V Leakage current: 1µA Type of diode: TVS кількість в упаковці: 1 шт |
на замовлення 2674 шт: термін постачання 14-21 дні (днів) |
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SM15T200CA | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 200V; 5.5A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 171V Breakdown voltage: 200V Max. forward impulse current: 5.5A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape кількість в упаковці: 2500 шт |
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SM15T220A | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 220V; 4.6A; unidirectional; SMC; reel,tape Case: SMC Mounting: SMD Kind of package: reel; tape Semiconductor structure: unidirectional Max. off-state voltage: 188V Peak pulse power dissipation: 1.5kW Max. forward impulse current: 4.6A Breakdown voltage: 220V Leakage current: 1µA Type of diode: TVS кількість в упаковці: 1 шт |
на замовлення 2400 шт: термін постачання 14-21 дні (днів) |
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SM15T220CA | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 220V; 4.6A; bidirectional; SMC; reel,tape Case: SMC Mounting: SMD Kind of package: reel; tape Semiconductor structure: bidirectional Max. off-state voltage: 188V Peak pulse power dissipation: 1.5kW Max. forward impulse current: 4.6A Breakdown voltage: 220V Leakage current: 1µA Type of diode: TVS кількість в упаковці: 1 шт |
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SM15T22A | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 22V; 49A; unidirectional; SMC; reel,tape Case: SMC Mounting: SMD Kind of package: reel; tape Semiconductor structure: unidirectional Max. off-state voltage: 18.8V Peak pulse power dissipation: 1.5kW Max. forward impulse current: 49A Breakdown voltage: 22V Leakage current: 1µA Type of diode: TVS кількість в упаковці: 2500 шт |
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SM15T22CA | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 22V; 4.6A; bidirectional; SMC; reel,tape Case: SMC Mounting: SMD Kind of package: reel; tape Semiconductor structure: bidirectional Max. off-state voltage: 18.8V Peak pulse power dissipation: 1.5kW Max. forward impulse current: 4.6A Breakdown voltage: 22V Leakage current: 1µA Type of diode: TVS кількість в упаковці: 1 шт |
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SM15T24A | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 24V; 45A; unidirectional; SMC; reel,tape Case: SMC Mounting: SMD Kind of package: reel; tape Semiconductor structure: unidirectional Max. off-state voltage: 20.5V Peak pulse power dissipation: 1.5kW Max. forward impulse current: 45A Breakdown voltage: 24V Leakage current: 1µA Type of diode: TVS кількість в упаковці: 1 шт |
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SM15T24CA | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 24V; 45A; bidirectional; SMC; reel,tape Case: SMC Mounting: SMD Kind of package: reel; tape Semiconductor structure: bidirectional Max. off-state voltage: 20.5V Peak pulse power dissipation: 1.5kW Max. forward impulse current: 45A Breakdown voltage: 24V Leakage current: 1µA Type of diode: TVS кількість в упаковці: 2500 шт |
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SM15T27A | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 27V; 40A; unidirectional; SMC; reel,tape Case: SMC Mounting: SMD Kind of package: reel; tape Semiconductor structure: unidirectional Max. off-state voltage: 23.1V Peak pulse power dissipation: 1.5kW Max. forward impulse current: 40A Breakdown voltage: 27V Leakage current: 1µA Type of diode: TVS кількість в упаковці: 1 шт |
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SM15T30A | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape Case: SMC Mounting: SMD Kind of package: reel; tape Semiconductor structure: unidirectional Max. off-state voltage: 25.6V Peak pulse power dissipation: 1.5kW Max. forward impulse current: 36A Breakdown voltage: 30V Leakage current: 1µA Type of diode: TVS кількість в упаковці: 1 шт |
на замовлення 2861 шт: термін постачання 14-21 дні (днів) |
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SM15T30CA | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape Case: SMC Mounting: SMD Kind of package: reel; tape Semiconductor structure: bidirectional Max. off-state voltage: 25.6V Peak pulse power dissipation: 1.5kW Max. forward impulse current: 36A Breakdown voltage: 30V Leakage current: 1µA Type of diode: TVS кількість в упаковці: 1 шт |
на замовлення 3452 шт: термін постачання 14-21 дні (днів) |
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SM15T33A | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 33V; 33A; unidirectional; SMC; reel,tape Max. off-state voltage: 28.2V Semiconductor structure: unidirectional Max. forward impulse current: 33A Breakdown voltage: 33V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Mounting: SMD Case: SMC кількість в упаковці: 1 шт |
на замовлення 674 шт: термін постачання 14-21 дні (днів) |
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SM15T33CA | STMicroelectronics |
![]() ![]() Description: Diode: TVS; 1.5kW; 33V; 33A; bidirectional; SMC; reel,tape Case: SMC Mounting: SMD Kind of package: reel; tape Semiconductor structure: bidirectional Max. off-state voltage: 28.2V Peak pulse power dissipation: 1.5kW Max. forward impulse current: 33A Breakdown voltage: 33V Leakage current: 1µA Type of diode: TVS кількість в упаковці: 1 шт |
товар відсутній |
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SM15T36A | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 36V; 30A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 30A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 1291 шт: термін постачання 14-21 дні (днів) |
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SCTH40N120G2V-7 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SCTH40N120G2V7AG |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SCTH60N120G2-7 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SCTH70N120G2V-7 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Polarisation: unipolar
Kind of package: tape
Kind of channel: enhanced
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Polarisation: unipolar
Kind of package: tape
Kind of channel: enhanced
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
SCTH90N65G2V-7 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 116A; Idm: 220A; 484W; H2PAK7
Mounting: SMD
Polarisation: unipolar
Gate charge: 157nC
Kind of channel: enhanced
Gate-source voltage: ±3.2V
Pulsed drain current: 220A
Case: H2PAK7
Drain-source voltage: 650V
Drain current: 116A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 484W
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 116A; Idm: 220A; 484W; H2PAK7
Mounting: SMD
Polarisation: unipolar
Gate charge: 157nC
Kind of channel: enhanced
Gate-source voltage: ±3.2V
Pulsed drain current: 220A
Case: H2PAK7
Drain-source voltage: 650V
Drain current: 116A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 484W
кількість в упаковці: 1 шт
товар відсутній
SCTL35N65G2V |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Polarisation: unipolar
Kind of package: tape
Kind of channel: enhanced
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Polarisation: unipolar
Kind of package: tape
Kind of channel: enhanced
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
SCTL90N65G2V |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Polarisation: unipolar
Kind of package: tape
Kind of channel: enhanced
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Polarisation: unipolar
Kind of package: tape
Kind of channel: enhanced
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
SCTW100N65G2AG |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SCTW35N65G2V |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 90A; 240W; HIP247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 90A
Power dissipation: 240W
Case: HIP247™
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 73nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 90A; 240W; HIP247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 90A
Power dissipation: 240W
Case: HIP247™
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 73nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SCTW35N65G2VAG |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SCTW40N120G2V |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SCTW40N120G2VAG |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 100A; 290W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 290W
Case: HIP247™
On-state resistance: 0.195Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Application: automotive industry
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 100A; 290W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 290W
Case: HIP247™
On-state resistance: 0.195Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
SCTW60N120G2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SCTW70N120G2V |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: THT
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: THT
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
SCTW90N65G2V |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 90A; Idm: 220A; 565W
Mounting: THT
Technology: SiC
Drain current: 90A
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Kind of package: tube
Case: HIP247™
On-state resistance: 30mΩ
Pulsed drain current: 220A
Power dissipation: 565W
Gate charge: 157nC
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 90A; Idm: 220A; 565W
Mounting: THT
Technology: SiC
Drain current: 90A
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Kind of package: tube
Case: HIP247™
On-state resistance: 30mΩ
Pulsed drain current: 220A
Power dissipation: 565W
Gate charge: 157nC
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
SCTWA20N120 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 45A; 175W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16A
Pulsed drain current: 45A
Power dissipation: 175W
Case: HIP247™
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 45A; 175W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16A
Pulsed drain current: 45A
Power dissipation: 175W
Case: HIP247™
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1303.67 грн |
2+ | 950.28 грн |
4+ | 865.55 грн |
SCTWA30N120 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 34A
Pulsed drain current: 90A
Power dissipation: 270W
Case: HIP247™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 34A
Pulsed drain current: 90A
Power dissipation: 270W
Case: HIP247™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2215.2 грн |
2+ | 2019.67 грн |
3+ | 1944 грн |
SCTWA35N65G2V-4 |
Виробник: STMicroelectronics
SCTWA35N65G2V-4 THT N channel transistors
SCTWA35N65G2V-4 THT N channel transistors
товар відсутній
SCTWA40N120G2V |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SCTWA40N120G2V-4 |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SCTWA50N120 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SCTWA60N120G2-4 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SCTWA70N120G2V-4 |
Виробник: STMicroelectronics
SCTWA70N120G2V-4 THT N channel transistors
SCTWA70N120G2V-4 THT N channel transistors
товар відсутній
SCTWA90N65G2V-4 |
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Виробник: STMicroelectronics
SCTWA90N65G2V-4 THT N channel transistors
SCTWA90N65G2V-4 THT N channel transistors
товар відсутній
SD2932W |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 125V; 40A; 500W; M244; Pout: 300W
Case: M244
Electrical mounting: FASTON connectors; soldering; THT
Kind of package: tube
Open-loop gain: 16dB
Output power: 300W
Power dissipation: 500W
Efficiency: 60%
Polarisation: unipolar
Mechanical mounting: screw
Kind of transistor: RF
Kind of channel: enhanced
Gate-source voltage: ±40V
Frequency: 175MHz
Drain-source voltage: 125V
Drain current: 40A
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 125V; 40A; 500W; M244; Pout: 300W
Case: M244
Electrical mounting: FASTON connectors; soldering; THT
Kind of package: tube
Open-loop gain: 16dB
Output power: 300W
Power dissipation: 500W
Efficiency: 60%
Polarisation: unipolar
Mechanical mounting: screw
Kind of transistor: RF
Kind of channel: enhanced
Gate-source voltage: ±40V
Frequency: 175MHz
Drain-source voltage: 125V
Drain current: 40A
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
SD2942W |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 130V; 40A; 500W; M244; Pout: 350W
Case: M244
Electrical mounting: FASTON connectors; soldering; THT
Kind of package: tube
Open-loop gain: 17dB
Output power: 350W
Power dissipation: 500W
Efficiency: 61%
Polarisation: unipolar
Mechanical mounting: screw
Kind of transistor: RF
Kind of channel: enhanced
Gate-source voltage: ±40V
Frequency: 175MHz
Drain-source voltage: 130V
Drain current: 40A
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 130V; 40A; 500W; M244; Pout: 350W
Case: M244
Electrical mounting: FASTON connectors; soldering; THT
Kind of package: tube
Open-loop gain: 17dB
Output power: 350W
Power dissipation: 500W
Efficiency: 61%
Polarisation: unipolar
Mechanical mounting: screw
Kind of transistor: RF
Kind of channel: enhanced
Gate-source voltage: ±40V
Frequency: 175MHz
Drain-source voltage: 130V
Drain current: 40A
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
SERC816 |
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Виробник: STMicroelectronics
Category: Interfaces others - integrated circuits
Description: IC: interface; 16Mbps; 5VDC; parallel 16bit,parallel 8bit; SMD
Type of integrated circuit: interface
Mounting: SMD
Case: PQFP100
Operating temperature: -40...85°C
Supply voltage: 5V DC
Interface: parallel 8bit; parallel 16bit
Number of channels: 2
Data transfer rate: 16Mbps
кількість в упаковці: 1 шт
Category: Interfaces others - integrated circuits
Description: IC: interface; 16Mbps; 5VDC; parallel 16bit,parallel 8bit; SMD
Type of integrated circuit: interface
Mounting: SMD
Case: PQFP100
Operating temperature: -40...85°C
Supply voltage: 5V DC
Interface: parallel 8bit; parallel 16bit
Number of channels: 2
Data transfer rate: 16Mbps
кількість в упаковці: 1 шт
товар відсутній
SG2525AN |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver; PWM controller; DIP16; 500mA; 0.2÷5.6V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: PWM controller
Case: DIP16
Output current: 0.5A
Output voltage: 0.2...5.6V
Number of channels: 2
Supply voltage: 8...35V
Mounting: THT
кількість в упаковці: 1 шт
Category: Voltage regulators - PWM circuits
Description: IC: driver; PWM controller; DIP16; 500mA; 0.2÷5.6V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: PWM controller
Case: DIP16
Output current: 0.5A
Output voltage: 0.2...5.6V
Number of channels: 2
Supply voltage: 8...35V
Mounting: THT
кількість в упаковці: 1 шт
на замовлення 614 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 257.36 грн |
5+ | 221.1 грн |
8+ | 129.48 грн |
22+ | 121.66 грн |
SG2525AP |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver; PWM controller; SO16; 500mA; 0.2÷5.6V; Ch: 2; Usup: 8÷35V
Type of integrated circuit: driver
Kind of integrated circuit: PWM controller
Case: SO16
Output current: 0.5A
Output voltage: 0.2...5.6V
Number of channels: 2
Supply voltage: 8...35V
Mounting: SMD
кількість в упаковці: 1 шт
Category: Voltage regulators - PWM circuits
Description: IC: driver; PWM controller; SO16; 500mA; 0.2÷5.6V; Ch: 2; Usup: 8÷35V
Type of integrated circuit: driver
Kind of integrated circuit: PWM controller
Case: SO16
Output current: 0.5A
Output voltage: 0.2...5.6V
Number of channels: 2
Supply voltage: 8...35V
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
SG3524N |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback,push-pull; PWM controller; DIP16; 100mA; Ch: 1
Type of integrated circuit: driver
Topology: flyback; push-pull
Kind of integrated circuit: PWM controller
Case: DIP16
Output current: 0.1A
Number of channels: 1
Supply voltage: 8...40V
Mounting: SMD
Operating temperature: 0...70°C
Application: SMPS
Frequency: 0.45MHz
Kind of package: tube
кількість в упаковці: 1 шт
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback,push-pull; PWM controller; DIP16; 100mA; Ch: 1
Type of integrated circuit: driver
Topology: flyback; push-pull
Kind of integrated circuit: PWM controller
Case: DIP16
Output current: 0.1A
Number of channels: 1
Supply voltage: 8...40V
Mounting: SMD
Operating temperature: 0...70°C
Application: SMPS
Frequency: 0.45MHz
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 66 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 185.3 грн |
3+ | 158.83 грн |
9+ | 119.06 грн |
24+ | 112.97 грн |
25+ | 108.63 грн |
SG3524P |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback,push-pull; PWM controller; SO16; 100mA; Ch: 1
Type of integrated circuit: driver
Topology: flyback; push-pull
Kind of integrated circuit: PWM controller
Case: SO16
Output current: 0.1A
Number of channels: 1
Supply voltage: 8...40V
Mounting: SMD
Operating temperature: 0...70°C
Application: SMPS
Frequency: 0.45MHz
Kind of package: tube
кількість в упаковці: 1 шт
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback,push-pull; PWM controller; SO16; 100mA; Ch: 1
Type of integrated circuit: driver
Topology: flyback; push-pull
Kind of integrated circuit: PWM controller
Case: SO16
Output current: 0.1A
Number of channels: 1
Supply voltage: 8...40V
Mounting: SMD
Operating temperature: 0...70°C
Application: SMPS
Frequency: 0.45MHz
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
SGT120R65AL |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 9A; Idm: 36A; 192W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 192W
Case: PowerFLAT 5x6
Gate-source voltage: -10...7V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: tape
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 9A; Idm: 36A; 192W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 192W
Case: PowerFLAT 5x6
Gate-source voltage: -10...7V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: tape
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
SLVU2.8-4A1 |
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Виробник: STMicroelectronics
Category: Transil diodes - arrays
Description: Diode: TVS array; 30A; 600W; SO8; Features: ESD protection; Ch: 4
Max. off-state voltage: 2.8V
Max. forward impulse current: 30A
Leakage current: 0.2µA
Number of channels: 4
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.6kW
Mounting: SMD
Case: SO8
кількість в упаковці: 2500 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 30A; 600W; SO8; Features: ESD protection; Ch: 4
Max. off-state voltage: 2.8V
Max. forward impulse current: 30A
Leakage current: 0.2µA
Number of channels: 4
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.6kW
Mounting: SMD
Case: SO8
кількість в упаковці: 2500 шт
товар відсутній
SLVU2.8-8A1 |
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Виробник: STMicroelectronics
Category: Transil diodes - arrays
Description: Diode: TVS array; 30A; 600W; SO8; Features: ESD protection; Ch: 8
Max. off-state voltage: 2.8V
Max. forward impulse current: 30A
Leakage current: 0.2µA
Number of channels: 8
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.6kW
Mounting: SMD
Case: SO8
кількість в упаковці: 1 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 30A; 600W; SO8; Features: ESD protection; Ch: 8
Max. off-state voltage: 2.8V
Max. forward impulse current: 30A
Leakage current: 0.2µA
Number of channels: 8
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.6kW
Mounting: SMD
Case: SO8
кількість в упаковці: 1 шт
на замовлення 463 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 79.55 грн |
6+ | 51.98 грн |
25+ | 44.06 грн |
27+ | 38.24 грн |
74+ | 36.15 грн |
SM15T100A |
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Виробник: STMicroelectronics
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 100V; 11A; unidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: unidirectional
Max. off-state voltage: 85.5V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 11A
Breakdown voltage: 100V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 100V; 11A; unidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: unidirectional
Max. off-state voltage: 85.5V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 11A
Breakdown voltage: 100V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 1 шт
на замовлення 1584 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 93.59 грн |
10+ | 77.97 грн |
25+ | 71 грн |
43+ | 23.55 грн |
118+ | 22.25 грн |
SM15T100CA |
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Виробник: STMicroelectronics
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 100V; 11A; bidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Max. off-state voltage: 85.5V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 11A
Breakdown voltage: 100V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 100V; 11A; bidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Max. off-state voltage: 85.5V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 11A
Breakdown voltage: 100V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 1 шт
на замовлення 2500 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 79.55 грн |
10+ | 64.25 грн |
25+ | 55.79 грн |
41+ | 25.03 грн |
111+ | 23.64 грн |
SM15T12A |
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Виробник: STMicroelectronics
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 12V; 90A; unidirectional; SMC; reel,tape
Case: SMC
Peak pulse power dissipation: 1.5kW
Mounting: SMD
Max. off-state voltage: 10.2V
Semiconductor structure: unidirectional
Max. forward impulse current: 90A
Breakdown voltage: 12V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 12V; 90A; unidirectional; SMC; reel,tape
Case: SMC
Peak pulse power dissipation: 1.5kW
Mounting: SMD
Max. off-state voltage: 10.2V
Semiconductor structure: unidirectional
Max. forward impulse current: 90A
Breakdown voltage: 12V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
кількість в упаковці: 1 шт
на замовлення 682 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 73 грн |
10+ | 60.82 грн |
25+ | 55.01 грн |
53+ | 19.09 грн |
146+ | 18.05 грн |
SM15T12CA |
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Виробник: STMicroelectronics
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 12V; 90A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 90A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
кількість в упаковці: 2500 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 12V; 90A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 90A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
кількість в упаковці: 2500 шт
товар відсутній
SM15T150CA |
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Виробник: STMicroelectronics
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 150V; 7.2A; bidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Max. off-state voltage: 128V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 7.2A
Breakdown voltage: 150V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 150V; 7.2A; bidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Max. off-state voltage: 128V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 7.2A
Breakdown voltage: 150V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 1 шт
на замовлення 1298 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 98.27 грн |
10+ | 82.3 грн |
25+ | 74.3 грн |
41+ | 24.51 грн |
113+ | 23.12 грн |
SM15T15A |
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Виробник: STMicroelectronics
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 15V; 71A; unidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: unidirectional
Max. off-state voltage: 12.8V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 71A
Breakdown voltage: 15V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 15V; 71A; unidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: unidirectional
Max. off-state voltage: 12.8V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 71A
Breakdown voltage: 15V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 1 шт
на замовлення 1912 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 69.25 грн |
10+ | 57.67 грн |
25+ | 52.14 грн |
59+ | 17.21 грн |
161+ | 16.25 грн |
SM15T15CA |
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Виробник: STMicroelectronics
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 15V; 71A; bidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Max. off-state voltage: 12.8V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 71A
Breakdown voltage: 15V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 15V; 71A; bidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Max. off-state voltage: 12.8V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 71A
Breakdown voltage: 15V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 1 шт
товар відсутній
SM15T18A |
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Виробник: STMicroelectronics
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: unidirectional
Max. off-state voltage: 15.3V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 59.5A
Breakdown voltage: 18V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: unidirectional
Max. off-state voltage: 15.3V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 59.5A
Breakdown voltage: 18V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 1 шт
на замовлення 1441 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 73 грн |
10+ | 60.82 грн |
25+ | 55.01 грн |
57+ | 17.64 грн |
157+ | 16.69 грн |
SM15T18CA |
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Виробник: STMicroelectronics
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; bidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Max. off-state voltage: 15.3V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 59.5A
Breakdown voltage: 18V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; bidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Max. off-state voltage: 15.3V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 59.5A
Breakdown voltage: 18V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 1 шт
на замовлення 4269 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 78.61 грн |
10+ | 65.43 грн |
25+ | 59.09 грн |
53+ | 18.94 грн |
146+ | 17.9 грн |
SM15T200A |
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Виробник: STMicroelectronics
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 200V; 5.5A; unidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: unidirectional
Max. off-state voltage: 171V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 5.5A
Breakdown voltage: 200V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 200V; 5.5A; unidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: unidirectional
Max. off-state voltage: 171V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 5.5A
Breakdown voltage: 200V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 1 шт
на замовлення 2674 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 81.42 грн |
10+ | 68.32 грн |
25+ | 61.7 грн |
50+ | 20.25 грн |
137+ | 19.12 грн |
SM15T200CA |
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Виробник: STMicroelectronics
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 200V; 5.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
кількість в упаковці: 2500 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 200V; 5.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
кількість в упаковці: 2500 шт
товар відсутній
SM15T220A |
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Виробник: STMicroelectronics
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 220V; 4.6A; unidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: unidirectional
Max. off-state voltage: 188V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 4.6A
Breakdown voltage: 220V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 220V; 4.6A; unidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: unidirectional
Max. off-state voltage: 188V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 4.6A
Breakdown voltage: 220V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 1 шт
на замовлення 2400 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 86.1 грн |
10+ | 72.02 грн |
25+ | 65 грн |
49+ | 20.86 грн |
133+ | 19.73 грн |
SM15T220CA |
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Виробник: STMicroelectronics
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 220V; 4.6A; bidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Max. off-state voltage: 188V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 4.6A
Breakdown voltage: 220V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 220V; 4.6A; bidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Max. off-state voltage: 188V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 4.6A
Breakdown voltage: 220V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 1 шт
товар відсутній
SM15T22A |
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Виробник: STMicroelectronics
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 22V; 49A; unidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: unidirectional
Max. off-state voltage: 18.8V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 49A
Breakdown voltage: 22V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 2500 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 22V; 49A; unidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: unidirectional
Max. off-state voltage: 18.8V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 49A
Breakdown voltage: 22V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 2500 шт
товар відсутній
SM15T22CA |
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Виробник: STMicroelectronics
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 22V; 4.6A; bidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Max. off-state voltage: 18.8V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 4.6A
Breakdown voltage: 22V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 22V; 4.6A; bidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Max. off-state voltage: 18.8V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 4.6A
Breakdown voltage: 22V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 1 шт
товар відсутній
SM15T24A |
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Виробник: STMicroelectronics
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 24V; 45A; unidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: unidirectional
Max. off-state voltage: 20.5V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 45A
Breakdown voltage: 24V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 24V; 45A; unidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: unidirectional
Max. off-state voltage: 20.5V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 45A
Breakdown voltage: 24V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 1 шт
товар відсутній
SM15T24CA |
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Виробник: STMicroelectronics
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 24V; 45A; bidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Max. off-state voltage: 20.5V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 45A
Breakdown voltage: 24V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 2500 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 24V; 45A; bidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Max. off-state voltage: 20.5V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 45A
Breakdown voltage: 24V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 2500 шт
товар відсутній
SM15T27A |
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Виробник: STMicroelectronics
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 27V; 40A; unidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: unidirectional
Max. off-state voltage: 23.1V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 40A
Breakdown voltage: 27V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 27V; 40A; unidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: unidirectional
Max. off-state voltage: 23.1V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 40A
Breakdown voltage: 27V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 1 шт
товар відсутній
SM15T30A |
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Виробник: STMicroelectronics
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: unidirectional
Max. off-state voltage: 25.6V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 36A
Breakdown voltage: 30V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: unidirectional
Max. off-state voltage: 25.6V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 36A
Breakdown voltage: 30V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 1 шт
на замовлення 2861 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 69.25 грн |
10+ | 58.03 грн |
25+ | 52.49 грн |
60+ | 16.77 грн |
165+ | 15.9 грн |
SM15T30CA |
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Виробник: STMicroelectronics
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Max. off-state voltage: 25.6V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 36A
Breakdown voltage: 30V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Max. off-state voltage: 25.6V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 36A
Breakdown voltage: 30V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 1 шт
на замовлення 3452 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 74.87 грн |
10+ | 62.18 грн |
25+ | 56.14 грн |
51+ | 19.73 грн |
141+ | 18.6 грн |
SM15T33A |
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Виробник: STMicroelectronics
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 33V; 33A; unidirectional; SMC; reel,tape
Max. off-state voltage: 28.2V
Semiconductor structure: unidirectional
Max. forward impulse current: 33A
Breakdown voltage: 33V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: SMD
Case: SMC
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 33V; 33A; unidirectional; SMC; reel,tape
Max. off-state voltage: 28.2V
Semiconductor structure: unidirectional
Max. forward impulse current: 33A
Breakdown voltage: 33V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: SMD
Case: SMC
кількість в упаковці: 1 шт
на замовлення 674 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 73.93 грн |
10+ | 61.73 грн |
25+ | 55.79 грн |
57+ | 17.81 грн |
157+ | 16.77 грн |
SM15T33CA | ![]() |
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Виробник: STMicroelectronics
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 33V; 33A; bidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Max. off-state voltage: 28.2V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 33A
Breakdown voltage: 33V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 33V; 33A; bidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Max. off-state voltage: 28.2V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 33A
Breakdown voltage: 33V
Leakage current: 1µA
Type of diode: TVS
кількість в упаковці: 1 шт
товар відсутній
SM15T36A |
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Виробник: STMicroelectronics
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 36V; 30A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 30A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 36V; 30A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 30A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 1291 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 73.93 грн |
10+ | 61.73 грн |
25+ | 55.79 грн |
54+ | 19.03 грн |
148+ | 17.99 грн |