SCTWA50N120 STMicroelectronics

Description: SICFET N-CH 1200V 65A HIP247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 69mOhm @ 40A, 20V, Power Dissipation (Max): 318W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: HiP247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 400 V.