| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FDMC8327L | onsemi |
 Description: MOSFET N-CH 40V 12A/14A 8MLPPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 14A (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 12A, 10V Power Dissipation (Max): 2.3W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
FOD8321V | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 5SOP Packaging: Tube Package / Case: 6-SOIC (0.346", 8.80mm Width), 5 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.5V Current - Peak Output: 3A Technology: Optical Coupling Current - Output High, Low: 2A, 2A Voltage - Isolation: 5000Vrms Approval Agency: IEC/EN/DIN, UL Supplier Device Package: 5-SOP Rise / Fall Time (Typ): 60ns, 60ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Pulse Width Distortion (Max): 300ns Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 16V ~ 30V |
товар відсутній |
|||||||||||||||
 |
FSA644UCX | onsemi |
Description: IC INTFACE SPECIALIZED 36WLCSP Packaging: Tape & Reel (TR) Package / Case: 36-UFBGA, WLCSP Mounting Type: Surface Mount Voltage - Supply: 1.65V ~ 4.5V Applications: Cell Phone Supplier Device Package: 36-WLCSP (2.43x2.43) Part Status: Obsolete |
товар відсутній |
|||||||||||||||
 |
FDMS8820 | onsemi |
Description: MOSFET N-CH 30V 28A/116A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 116A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 28A, 10V Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5315 pF @ 15 V |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
FGH40T65UPD | onsemi |
Description: IGBT TRENCH/FS 650V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 43 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/144ns Switching Energy: 1.59mJ (on), 580µJ (off) Test Condition: 400V, 40A, 7Ohm, 15V Gate Charge: 177 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 268 W |
товар відсутній |
|||||||||||||||
 |
FXMHD103UMX | onsemi |
Description: IC INTERFACE SPECIALIZED 12UMLP Packaging: Tape & Reel (TR) Package / Case: 12-UFQFN Mounting Type: Surface Mount Voltage - Supply: 1.6V ~ 3.6V Applications: Cell Phones, Digital Cameras, Media Players Supplier Device Package: 12-UMLP (1.8x1.8) |
товар відсутній |
|||||||||||||||
 |
FXWA9306L8X | onsemi |
Description: IC TRANSLATOR BIDIR 8MICROPAK Features: Auto-Direction Sensing Packaging: Tape & Reel (TR) Package / Case: 8-UFQFN Output Type: Open Drain, Tri-State Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 8-MicroPak™ Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1 V ~ 5.5 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Active Number of Circuits: 1 |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
HUF76633P3-F085 | onsemi |
Description: MOSFET N-CH 100V 39A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V Power Dissipation (Max): 145W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V |
товар відсутній |
|||||||||||||||
 |
DFB2080 | onsemi |
Description: BRIDGE RECT 1PHASE 800V 20A TS6P Packaging: Tube Package / Case: 4-SIP, TS-6P Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TS-6P Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 20 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 1200 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
DFB2040 | onsemi |
Description: BRIDGE RECT 1P 400V 20A TS-6P Packaging: Tube Package / Case: 4-SIP, TS-6P Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TS-6P Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 20 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 2397 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
FXL6408UMX | onsemi |
Description: IC XPNDR 400KHZ I2C 16UMLP Features: POR Packaging: Tape & Reel (TR) Package / Case: 16-UFQFN Output Type: Open Drain Mounting Type: Surface Mount Interface: I2C Number of I/O: 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 4V Clock Frequency: 400 kHz Interrupt Output: Yes Supplier Device Package: 16-UMLP (1.8x2.6) Current - Output Source/Sink: 6mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
FSBB30CH60CT | onsemi |
Description: MODULE SPM 600V 30A SPMEC Packaging: Tube Package / Case: 27-PowerDIP Module (1.205", 30.60mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2500Vrms Part Status: Obsolete Current: 30 A Voltage: 600 V |
товар відсутній |
|||||||||||||||
 |
FSL137MRIN | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 67% Frequency - Switching: 67kHz Internal Switch(s): Yes Voltage - Breakdown: 700V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V Supplier Device Package: 8-DIP Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 12 V Part Status: Active Power (Watts): 30 W |
товар відсутній |
|||||||||||||||
 |
HUF76639S3ST-F085 | onsemi |
Description: MOSFET N CH 100V 51A TO-263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V |
товар відсутній |
|||||||||||||||
|
|
FDMS030N06B | onsemi |
Description: MOSFET N-CH 60V 22.1A/100A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22.1A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 30 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
FDMS8090 | onsemi |
Description: MOSFET 2N-CH 100V 10A 8MLP PWR56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.2W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (5x6), Power56 |
товар відсутній |
|||||||||||||||
 |
FDMC89521L | onsemi |
Description: MOSFET 2N-CH 60V 8.2A 8PWR33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W (Ta), 16W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1635pF @ 30V Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-Power33 (3x3) |
на замовлення 39000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
FDP053N08B-F102 | onsemi |
Description: MOSFET N-CH 80V 75A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 75A, 10V Power Dissipation (Max): 146W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5960 pF @ 40 V |
на замовлення 1540 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
FDME820NZT | onsemi |
Description: MOSFET N-CH 20V 9A MICROFET Packaging: Tape & Reel (TR) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: MicroFet 1.6x1.6 Thin Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
FDMF3030 | onsemi |
Description: IC HALF BRIDGE DRIVER 50A 40PQFN Features: Bootstrap Circuit, Diode Emulation, Status Flag Packaging: Tape & Reel (TR) Package / Case: 40-PowerTFQFN Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 5.5V Rds On (Typ): 900mOhm LS, 800mOhm HS Applications: Synchronous Buck Converters Current - Output / Channel: 50A Technology: DrMOS Voltage - Load: 3V ~ 24V Supplier Device Package: 40-PQFN (6x6) Fault Protection: Over Temperature, Shoot-Through, UVLO Load Type: Inductive Part Status: Last Time Buy |
товар відсутній |
|||||||||||||||
|
|
FDMS86101A | onsemi |
Description: MOSFET N-CH 100V 13A/60A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 50 V |
товар відсутній |
|||||||||||||||
|
|
FDMS7678 | onsemi |
Description: MOSFET N-CH 30V 17.5A/26A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 26A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17.5A, 10V Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
DFB25100 | onsemi |
Description: BRIDGE RECT 1PHASE 1V 25A TS6P Packaging: Tube Package / Case: 4-SIP, TS-6P Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TS-6P Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 1367 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
FAN53600AUC33X | onsemi |
Description: IC REG BUCK 3.3V 600MA 6WLCSP Packaging: Tape & Reel (TR) Package / Case: 6-UFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 600mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 3MHz Voltage - Input (Max): 5.5V Topology: Buck Supplier Device Package: 6-WLCSP (1.23x0.88) Synchronous Rectifier: Yes Voltage - Input (Min): 2.3V Voltage - Output (Min/Fixed): 3.3V Part Status: Last Time Buy |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
FAN3227TMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 18V Input Type: Non-Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 12ns, 9ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 3A, 3A Grade: Automotive Part Status: Active DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
FDMS86200DC | onsemi |
Description: MOSFET N-CH 150V 9.3A DLCOOL56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 9.3A, 10V Power Dissipation (Max): 3.2W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2955 pF @ 75 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
FDMC86260 | onsemi |
Description: MOSFET N CH 150V 5.4A POWER 33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V Power Dissipation (Max): 2.3W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
FOD8160R2 | onsemi |
Description: OPTOISO 5KV OPEN COLLECTOR 5SOP Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads Output Type: Open Collector, Schottky Clamped Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 3V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.45V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 25mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 5-SOP Rise / Fall Time (Typ): 22ns, 9ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 90ns, 80ns Number of Channels: 1 Current - Output / Channel: 50 mA |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
FOD8160 | onsemi |
Description: OPTOISO 5KV OPEN COLLECTOR 5SOP Packaging: Tube Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads Output Type: Open Collector, Schottky Clamped Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 3V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.45V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 25mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 5-SOP Rise / Fall Time (Typ): 22ns, 9ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 90ns, 80ns Number of Channels: 1 Current - Output / Channel: 50 mA |
на замовлення 1831 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
FCH041N60F | onsemi |
Description: MOSFET N-CH 600V 76A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V Power Dissipation (Max): 595W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14365 pF @ 100 V |
на замовлення 441 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
FDMS8333L | onsemi |
Description: MOSFET N CH 40V 22A POWER 56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 22A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4545 pF @ 20 V |
товар відсутній |
|||||||||||||||
|
|
FDMS8333L | onsemi |
Description: MOSFET N CH 40V 22A POWER 56 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 22A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4545 pF @ 20 V |
на замовлення 2609 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
FGD3N60UNDF | onsemi |
Description: IGBT 600V 6A 60W DPAK |
на замовлення 2480 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
FGD3N60UNDF | onsemi |
Description: IGBT 600V 6A 60W DPAK |
товар відсутній |
|||||||||||||||
 |
QSB34CGR | onsemi |
Description: SENSOR PHOTODIODE 940NM 2SMD GW Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Gull Wing Wavelength: 940nm Mounting Type: Surface Mount Diode Type: Pin Operating Temperature: -25°C ~ 85°C Response Time: 50ns Viewing Angle: 120° Spectral Range: 400nm ~ 1100nm Active Area: 6.5mm² Current - Dark (Typ): 30nA Part Status: Active Voltage - DC Reverse (Vr) (Max): 32 V |
на замовлення 658000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
NCS1002ADR2G | onsemi |
Description: IC SECONDARY-SIDE CTRLR 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3V ~ 32V Applications: Secondary-Side Controller Current - Supply: 200µA Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
LMV932DR2G | onsemi |
Description: IC CMOS 2 CIRCUIT 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 125°C Current - Supply: 75µA (x2 Channels) Slew Rate: 0.35V/µs Gain Bandwidth Product: 1.5 MHz Current - Input Bias: 1 nA Voltage - Input Offset: 1 mV Supplier Device Package: 8-SOIC Number of Circuits: 2 Current - Output / Channel: 80 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
LMV932DR2G | onsemi |
Description: IC CMOS 2 CIRCUIT 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 125°C Current - Supply: 75µA (x2 Channels) Slew Rate: 0.35V/µs Gain Bandwidth Product: 1.5 MHz Current - Input Bias: 1 nA Voltage - Input Offset: 1 mV Supplier Device Package: 8-SOIC Number of Circuits: 2 Current - Output / Channel: 80 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5 V |
на замовлення 6315 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
NCS1002ADR2G | onsemi |
Description: IC SECONDARY-SIDE CTRLR 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3V ~ 32V Applications: Secondary-Side Controller Current - Supply: 200µA Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
LMV932DMR2G | onsemi |
Description: IC CMOS 2 CIRCUIT 8MSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 125°C Current - Supply: 75µA (x2 Channels) Slew Rate: 0.35V/µs Gain Bandwidth Product: 1.5 MHz Current - Input Bias: 1 nA Voltage - Input Offset: 1 mV Supplier Device Package: 8-MSOP Number of Circuits: 2 Current - Output / Channel: 80 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
LMV932DMR2G | onsemi |
Description: IC CMOS 2 CIRCUIT 8MSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 125°C Current - Supply: 75µA (x2 Channels) Slew Rate: 0.35V/µs Gain Bandwidth Product: 1.5 MHz Current - Input Bias: 1 nA Voltage - Input Offset: 1 mV Supplier Device Package: 8-MSOP Number of Circuits: 2 Current - Output / Channel: 80 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5 V |
на замовлення 8814 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
TS391SN2T1G | onsemi |
Description: IC COMPARATOR 1 GEN PUR 5TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Number of Elements: 1 Type: General Purpose Operating Temperature: -40°C ~ 125°C Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V Supplier Device Package: 5-TSOP Propagation Delay (Max): 850ns (Typ) Current - Quiescent (Max): 1.25mA Voltage - Input Offset (Max): 5mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 20mA Part Status: Active |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
TS391SN2T1G | onsemi |
Description: IC COMPARATOR 1 GEN PUR 5TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Number of Elements: 1 Type: General Purpose Operating Temperature: -40°C ~ 125°C Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V Supplier Device Package: 5-TSOP Propagation Delay (Max): 850ns (Typ) Current - Quiescent (Max): 1.25mA Voltage - Input Offset (Max): 5mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 20mA Part Status: Active |
на замовлення 9932 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
NCS2584DTBR2G | onsemi |
Description: IC VIDEO DRIVER 14TSSOP Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Driver Voltage - Supply: 3.3V ~ 5V Applications: Consumer Video Supplier Device Package: 14-TSSOP Control Interface: Parallel |
товар відсутній |
|||||||||||||||
|
|
NCS2584DTBR2G | onsemi |
Description: IC VIDEO DRIVER 14TSSOP Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Driver Voltage - Supply: 3.3V ~ 5V Applications: Consumer Video Supplier Device Package: 14-TSSOP Control Interface: Parallel |
товар відсутній |
|||||||||||||||
|
|
NCS3402DR2G | onsemi |
Description: IC COMPARATOR 2 GEN PUR 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Open-Drain Mounting Type: Surface Mount Number of Elements: 2 Type: General Purpose Operating Temperature: -40°C ~ 125°C Voltage - Supply, Single/Dual (±): 2.5V ~ 16V Supplier Device Package: 8-SOIC Propagation Delay (Max): 220µs (Typ) Current - Quiescent (Max): 640nA Voltage - Input Offset (Max): 3.6mV @ 15V Current - Input Bias (Max): 250pA @ 15V Current - Output (Typ): 10mA CMRR, PSRR (Typ): 88dB CMRR, 105dB PSRR |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
NCS3402DR2G | onsemi |
Description: IC COMPARATOR 2 GEN PUR 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Open-Drain Mounting Type: Surface Mount Number of Elements: 2 Type: General Purpose Operating Temperature: -40°C ~ 125°C Voltage - Supply, Single/Dual (±): 2.5V ~ 16V Supplier Device Package: 8-SOIC Propagation Delay (Max): 220µs (Typ) Current - Quiescent (Max): 640nA Voltage - Input Offset (Max): 3.6mV @ 15V Current - Input Bias (Max): 250pA @ 15V Current - Output (Typ): 10mA CMRR, PSRR (Typ): 88dB CMRR, 105dB PSRR |
на замовлення 5513 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| NCS7301SN1T1G | onsemi |
Description: IC OP AMP Packaging: Tape & Reel (TR) |
товар відсутній |
||||||||||||||||
 |
FDLL914B | onsemi |
Description: DIODE GEN PURP 100V 200MA SOD80 Packaging: Cut Tape (CT) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-80 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
на замовлення 3660 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
KST3906MTF | onsemi |
Description: TRANS PNP 40V 0.2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 350 mW |
товар відсутній |
|||||||||||||||
 |
KSA812YMTF | onsemi |
Description: TRANS PNP 50V 0.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V Frequency - Transition: 180MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
товар відсутній |
|||||||||||||||
|
|
MMBT2369 | onsemi |
Description: TRANS NPN 15V 0.2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 30µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 350 mW |
товар відсутній |
|||||||||||||||
 |
FJX3904TF | onsemi |
Description: TRANS NPN 40V 0.2A SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz Supplier Device Package: SOT-323 Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 350 mW |
товар відсутній |
|||||||||||||||
|
|
BCW89 | onsemi |
 Description: TRANS PNP 60V 0.5A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 350 mW |
товар відсутній |
|||||||||||||||
 |
KST43MTF | onsemi |
Description: TRANS NPN 200V 0.5A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Frequency - Transition: 50MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 350 mW |
товар відсутній |
|||||||||||||||
 |
FJX992TF | onsemi |
Description: TRANS PNP 120V 0.1A SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: SOT-323 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 235 mW |
на замовлення 1727 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
MMSZ5255B | onsemi |
Description: DIODE ZENER 28V 500MW SOD123 Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 28 V Impedance (Max) (Zzt): 44 Ohms Supplier Device Package: SOD-123 Part Status: Obsolete Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 21 V |
товар відсутній |
|||||||||||||||
 |
MPSA05RA | onsemi |
Description: TRANS NPN 60V 0.5A TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
на замовлення 7814 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
1N5231CTR | onsemi |
Description: DIODE ZENER 5.1V 500MW DO35 Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 17 Ohms Supplier Device Package: DO-35 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V |
на замовлення 58388 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
1N5243BTR | onsemi |
Description: DIODE ZENER 13V 500MW DO35 Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 13 Ohms Supplier Device Package: DO-35 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V |
на замовлення 36885 шт: термін постачання 21-31 дні (днів) |
|
| FDMC8327L |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 12A/14A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 12A, 10V
Power Dissipation (Max): 2.3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V
Description: MOSFET N-CH 40V 12A/14A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 12A, 10V
Power Dissipation (Max): 2.3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 33.44 грн |
| 6000+ | 30.67 грн |
| 9000+ | 29.25 грн |
| FOD8321V |
|
Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 5SOP
Packaging: Tube
Package / Case: 6-SOIC (0.346", 8.80mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: 5-SOP
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 16V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 5SOP
Packaging: Tube
Package / Case: 6-SOIC (0.346", 8.80mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: 5-SOP
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 16V ~ 30V
товар відсутній
| FSA644UCX |
|
Виробник: onsemi
Description: IC INTFACE SPECIALIZED 36WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 36-UFBGA, WLCSP
Mounting Type: Surface Mount
Voltage - Supply: 1.65V ~ 4.5V
Applications: Cell Phone
Supplier Device Package: 36-WLCSP (2.43x2.43)
Part Status: Obsolete
Description: IC INTFACE SPECIALIZED 36WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 36-UFBGA, WLCSP
Mounting Type: Surface Mount
Voltage - Supply: 1.65V ~ 4.5V
Applications: Cell Phone
Supplier Device Package: 36-WLCSP (2.43x2.43)
Part Status: Obsolete
товар відсутній
| FDMS8820 |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 28A/116A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 28A, 10V
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5315 pF @ 15 V
Description: MOSFET N-CH 30V 28A/116A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 28A, 10V
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5315 pF @ 15 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 35.69 грн |
| 6000+ | 32.73 грн |
| 9000+ | 31.22 грн |
| FGH40T65UPD |
|
Виробник: onsemi
Description: IGBT TRENCH/FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/144ns
Switching Energy: 1.59mJ (on), 580µJ (off)
Test Condition: 400V, 40A, 7Ohm, 15V
Gate Charge: 177 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
Description: IGBT TRENCH/FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/144ns
Switching Energy: 1.59mJ (on), 580µJ (off)
Test Condition: 400V, 40A, 7Ohm, 15V
Gate Charge: 177 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
товар відсутній
| FXMHD103UMX |
|
Виробник: onsemi
Description: IC INTERFACE SPECIALIZED 12UMLP
Packaging: Tape & Reel (TR)
Package / Case: 12-UFQFN
Mounting Type: Surface Mount
Voltage - Supply: 1.6V ~ 3.6V
Applications: Cell Phones, Digital Cameras, Media Players
Supplier Device Package: 12-UMLP (1.8x1.8)
Description: IC INTERFACE SPECIALIZED 12UMLP
Packaging: Tape & Reel (TR)
Package / Case: 12-UFQFN
Mounting Type: Surface Mount
Voltage - Supply: 1.6V ~ 3.6V
Applications: Cell Phones, Digital Cameras, Media Players
Supplier Device Package: 12-UMLP (1.8x1.8)
товар відсутній
| FXWA9306L8X |
|
Виробник: onsemi
Description: IC TRANSLATOR BIDIR 8MICROPAK
Features: Auto-Direction Sensing
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-MicroPak™
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 5.5 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Description: IC TRANSLATOR BIDIR 8MICROPAK
Features: Auto-Direction Sensing
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-MicroPak™
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 5.5 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 26.84 грн |
| 10000+ | 25.04 грн |
| 25000+ | 24.23 грн |
| HUF76633P3-F085 |
Виробник: onsemi
Description: MOSFET N-CH 100V 39A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
Description: MOSFET N-CH 100V 39A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
товар відсутній
| DFB2080 |
|
Виробник: onsemi
Description: BRIDGE RECT 1PHASE 800V 20A TS6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 20A TS6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 192.52 грн |
| 15+ | 153.91 грн |
| 105+ | 122.5 грн |
| 510+ | 97.28 грн |
| 1005+ | 82.54 грн |
| DFB2040 |
|
Виробник: onsemi
Description: BRIDGE RECT 1P 400V 20A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1P 400V 20A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 2397 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 136.12 грн |
| 10+ | 108.92 грн |
| 100+ | 86.68 грн |
| 500+ | 73.44 грн |
| FXL6408UMX |
|
Виробник: onsemi
Description: IC XPNDR 400KHZ I2C 16UMLP
Features: POR
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 4V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 16-UMLP (1.8x2.6)
Current - Output Source/Sink: 6mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC XPNDR 400KHZ I2C 16UMLP
Features: POR
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 4V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 16-UMLP (1.8x2.6)
Current - Output Source/Sink: 6mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 15.39 грн |
| FSBB30CH60CT |
|
Виробник: onsemi
Description: MODULE SPM 600V 30A SPMEC
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 30 A
Voltage: 600 V
Description: MODULE SPM 600V 30A SPMEC
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 30 A
Voltage: 600 V
товар відсутній
| FSL137MRIN |
|
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 67%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Part Status: Active
Power (Watts): 30 W
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 67%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Part Status: Active
Power (Watts): 30 W
товар відсутній
| HUF76639S3ST-F085 |
|
Виробник: onsemi
Description: MOSFET N CH 100V 51A TO-263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Description: MOSFET N CH 100V 51A TO-263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
товар відсутній
| FDMS030N06B |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 22.1A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.1A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 30 V
Description: MOSFET N-CH 60V 22.1A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.1A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 114.48 грн |
| FDMS8090 |
|
Виробник: onsemi
Description: MOSFET 2N-CH 100V 10A 8MLP PWR56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (5x6), Power56
Description: MOSFET 2N-CH 100V 10A 8MLP PWR56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (5x6), Power56
товар відсутній
| FDMC89521L |
|
Виробник: onsemi
Description: MOSFET 2N-CH 60V 8.2A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta), 16W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1635pF @ 30V
Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Description: MOSFET 2N-CH 60V 8.2A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta), 16W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1635pF @ 30V
Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 62.34 грн |
| 6000+ | 57.78 грн |
| 9000+ | 55.86 грн |
| FDP053N08B-F102 |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 75A, 10V
Power Dissipation (Max): 146W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5960 pF @ 40 V
Description: MOSFET N-CH 80V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 75A, 10V
Power Dissipation (Max): 146W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5960 pF @ 40 V
на замовлення 1540 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 146.65 грн |
| 50+ | 113.16 грн |
| 100+ | 93.11 грн |
| 500+ | 73.94 грн |
| 1000+ | 62.74 грн |
| FDME820NZT |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 9A MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: MicroFet 1.6x1.6 Thin
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
Description: MOSFET N-CH 20V 9A MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: MicroFet 1.6x1.6 Thin
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 24.83 грн |
| FDMF3030 |
|
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 50A 40PQFN
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 900mOhm LS, 800mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: DrMOS
Voltage - Load: 3V ~ 24V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Last Time Buy
Description: IC HALF BRIDGE DRIVER 50A 40PQFN
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 900mOhm LS, 800mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: DrMOS
Voltage - Load: 3V ~ 24V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Last Time Buy
товар відсутній
| FDMS86101A |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 13A/60A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 50 V
Description: MOSFET N-CH 100V 13A/60A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 50 V
товар відсутній
| FDMS7678 |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 17.5A/26A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
Description: MOSFET N-CH 30V 17.5A/26A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 23.39 грн |
| DFB25100 |
|
Виробник: onsemi
Description: BRIDGE RECT 1PHASE 1V 25A TS6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1V 25A TS6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 1367 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 206.81 грн |
| 15+ | 167.09 грн |
| 105+ | 135.18 грн |
| 510+ | 112.77 грн |
| 1005+ | 96.56 грн |
| FAN53600AUC33X |
|
Виробник: onsemi
Description: IC REG BUCK 3.3V 600MA 6WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 3MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 6-WLCSP (1.23x0.88)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.3V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Last Time Buy
Description: IC REG BUCK 3.3V 600MA 6WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 3MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 6-WLCSP (1.23x0.88)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.3V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Last Time Buy
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 27.98 грн |
| FAN3227TMX-F085 |
|
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 3A, 3A
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 3A, 3A
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 48.08 грн |
| 5000+ | 44.52 грн |
| FDMS86200DC |
|
Виробник: onsemi
Description: MOSFET N-CH 150V 9.3A DLCOOL56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.3A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2955 pF @ 75 V
Description: MOSFET N-CH 150V 9.3A DLCOOL56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.3A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2955 pF @ 75 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 148.03 грн |
| FDMC86260 |
|
Виробник: onsemi
Description: MOSFET N CH 150V 5.4A POWER 33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V
Description: MOSFET N CH 150V 5.4A POWER 33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 76.95 грн |
| 6000+ | 71.32 грн |
| 9000+ | 68.96 грн |
| FOD8160R2 |
|
Виробник: onsemi
Description: OPTOISO 5KV OPEN COLLECTOR 5SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 5-SOP
Rise / Fall Time (Typ): 22ns, 9ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISO 5KV OPEN COLLECTOR 5SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 5-SOP
Rise / Fall Time (Typ): 22ns, 9ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Number of Channels: 1
Current - Output / Channel: 50 mA
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 127.77 грн |
| FOD8160 |
|
Виробник: onsemi
Description: OPTOISO 5KV OPEN COLLECTOR 5SOP
Packaging: Tube
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 5-SOP
Rise / Fall Time (Typ): 22ns, 9ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISO 5KV OPEN COLLECTOR 5SOP
Packaging: Tube
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 5-SOP
Rise / Fall Time (Typ): 22ns, 9ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Number of Channels: 1
Current - Output / Channel: 50 mA
на замовлення 1831 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 285.77 грн |
| 10+ | 194.3 грн |
| 100+ | 159.12 грн |
| 500+ | 125.88 грн |
| 1000+ | 115.46 грн |
| FCH041N60F |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 76A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14365 pF @ 100 V
Description: MOSFET N-CH 600V 76A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14365 pF @ 100 V
на замовлення 441 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 888.16 грн |
| 30+ | 691.89 грн |
| 120+ | 651.19 грн |
| FDMS8333L |
|
Виробник: onsemi
Description: MOSFET N CH 40V 22A POWER 56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 22A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4545 pF @ 20 V
Description: MOSFET N CH 40V 22A POWER 56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 22A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4545 pF @ 20 V
товар відсутній
| FDMS8333L |
|
Виробник: onsemi
Description: MOSFET N CH 40V 22A POWER 56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 22A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4545 pF @ 20 V
Description: MOSFET N CH 40V 22A POWER 56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 22A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4545 pF @ 20 V
на замовлення 2609 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 99.27 грн |
| 10+ | 85.6 грн |
| 100+ | 66.75 грн |
| 500+ | 51.74 грн |
| 1000+ | 40.85 грн |
| FGD3N60UNDF |
|
Виробник: onsemi
Description: IGBT 600V 6A 60W DPAK
Description: IGBT 600V 6A 60W DPAK
на замовлення 2480 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 103.03 грн |
| 10+ | 88.57 грн |
| 100+ | 69.05 грн |
| 500+ | 53.53 грн |
| 1000+ | 42.26 грн |
| QSB34CGR |
|
Виробник: onsemi
Description: SENSOR PHOTODIODE 940NM 2SMD GW
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Gull Wing
Wavelength: 940nm
Mounting Type: Surface Mount
Diode Type: Pin
Operating Temperature: -25°C ~ 85°C
Response Time: 50ns
Viewing Angle: 120°
Spectral Range: 400nm ~ 1100nm
Active Area: 6.5mm²
Current - Dark (Typ): 30nA
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 32 V
Description: SENSOR PHOTODIODE 940NM 2SMD GW
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Gull Wing
Wavelength: 940nm
Mounting Type: Surface Mount
Diode Type: Pin
Operating Temperature: -25°C ~ 85°C
Response Time: 50ns
Viewing Angle: 120°
Spectral Range: 400nm ~ 1100nm
Active Area: 6.5mm²
Current - Dark (Typ): 30nA
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 32 V
на замовлення 658000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 28.71 грн |
| 2000+ | 26.27 грн |
| 5000+ | 25.68 грн |
| 10000+ | 23.54 грн |
| 25000+ | 23.17 грн |
| NCS1002ADR2G |
|
Виробник: onsemi
Description: IC SECONDARY-SIDE CTRLR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 32V
Applications: Secondary-Side Controller
Current - Supply: 200µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: IC SECONDARY-SIDE CTRLR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 32V
Applications: Secondary-Side Controller
Current - Supply: 200µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.13 грн |
| 10+ | 40.48 грн |
| 25+ | 37.98 грн |
| 100+ | 27.02 грн |
| 250+ | 23 грн |
| 500+ | 21.85 грн |
| 1000+ | 16.4 грн |
| LMV932DR2G |
|
Виробник: onsemi
Description: IC CMOS 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 75µA (x2 Channels)
Slew Rate: 0.35V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
Description: IC CMOS 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 75µA (x2 Channels)
Slew Rate: 0.35V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 15.22 грн |
| 5000+ | 13.65 грн |
| LMV932DR2G |
|
Виробник: onsemi
Description: IC CMOS 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 75µA (x2 Channels)
Slew Rate: 0.35V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
Description: IC CMOS 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 75µA (x2 Channels)
Slew Rate: 0.35V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
на замовлення 6315 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 45.87 грн |
| 10+ | 37.87 грн |
| 25+ | 35.37 грн |
| 100+ | 24.66 грн |
| 250+ | 20.87 грн |
| 500+ | 19.92 грн |
| 1000+ | 14.46 грн |
| NCS1002ADR2G |
|
Виробник: onsemi
Description: IC SECONDARY-SIDE CTRLR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 32V
Applications: Secondary-Side Controller
Current - Supply: 200µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: IC SECONDARY-SIDE CTRLR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 32V
Applications: Secondary-Side Controller
Current - Supply: 200µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 17.18 грн |
| LMV932DMR2G |
|
Виробник: onsemi
Description: IC CMOS 2 CIRCUIT 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 75µA (x2 Channels)
Slew Rate: 0.35V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-MSOP
Number of Circuits: 2
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
Description: IC CMOS 2 CIRCUIT 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 75µA (x2 Channels)
Slew Rate: 0.35V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-MSOP
Number of Circuits: 2
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 26.71 грн |
| LMV932DMR2G |
|
Виробник: onsemi
Description: IC CMOS 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 75µA (x2 Channels)
Slew Rate: 0.35V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-MSOP
Number of Circuits: 2
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
Description: IC CMOS 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 75µA (x2 Channels)
Slew Rate: 0.35V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-MSOP
Number of Circuits: 2
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
на замовлення 8814 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 66.18 грн |
| 10+ | 56.99 грн |
| 25+ | 54.14 грн |
| 100+ | 39.02 грн |
| 250+ | 34.48 грн |
| 500+ | 32.67 грн |
| 1000+ | 24.99 грн |
| TS391SN2T1G |
|
Виробник: onsemi
Description: IC COMPARATOR 1 GEN PUR 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 5-TSOP
Propagation Delay (Max): 850ns (Typ)
Current - Quiescent (Max): 1.25mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 20mA
Part Status: Active
Description: IC COMPARATOR 1 GEN PUR 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 5-TSOP
Propagation Delay (Max): 850ns (Typ)
Current - Quiescent (Max): 1.25mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 20mA
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 15.11 грн |
| 6000+ | 13.55 грн |
| TS391SN2T1G |
|
Виробник: onsemi
Description: IC COMPARATOR 1 GEN PUR 5TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 5-TSOP
Propagation Delay (Max): 850ns (Typ)
Current - Quiescent (Max): 1.25mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 20mA
Part Status: Active
Description: IC COMPARATOR 1 GEN PUR 5TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 5-TSOP
Propagation Delay (Max): 850ns (Typ)
Current - Quiescent (Max): 1.25mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 20mA
Part Status: Active
на замовлення 9932 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 45.87 грн |
| 10+ | 37.66 грн |
| 25+ | 35.14 грн |
| 100+ | 24.48 грн |
| 250+ | 20.71 грн |
| 500+ | 19.77 грн |
| 1000+ | 14.36 грн |
| NCS2584DTBR2G |
|
Виробник: onsemi
Description: IC VIDEO DRIVER 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 3.3V ~ 5V
Applications: Consumer Video
Supplier Device Package: 14-TSSOP
Control Interface: Parallel
Description: IC VIDEO DRIVER 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 3.3V ~ 5V
Applications: Consumer Video
Supplier Device Package: 14-TSSOP
Control Interface: Parallel
товар відсутній
| NCS2584DTBR2G |
|
Виробник: onsemi
Description: IC VIDEO DRIVER 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 3.3V ~ 5V
Applications: Consumer Video
Supplier Device Package: 14-TSSOP
Control Interface: Parallel
Description: IC VIDEO DRIVER 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 3.3V ~ 5V
Applications: Consumer Video
Supplier Device Package: 14-TSSOP
Control Interface: Parallel
товар відсутній
| NCS3402DR2G |
|
Виробник: onsemi
Description: IC COMPARATOR 2 GEN PUR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2.5V ~ 16V
Supplier Device Package: 8-SOIC
Propagation Delay (Max): 220µs (Typ)
Current - Quiescent (Max): 640nA
Voltage - Input Offset (Max): 3.6mV @ 15V
Current - Input Bias (Max): 250pA @ 15V
Current - Output (Typ): 10mA
CMRR, PSRR (Typ): 88dB CMRR, 105dB PSRR
Description: IC COMPARATOR 2 GEN PUR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2.5V ~ 16V
Supplier Device Package: 8-SOIC
Propagation Delay (Max): 220µs (Typ)
Current - Quiescent (Max): 640nA
Voltage - Input Offset (Max): 3.6mV @ 15V
Current - Input Bias (Max): 250pA @ 15V
Current - Output (Typ): 10mA
CMRR, PSRR (Typ): 88dB CMRR, 105dB PSRR
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 19.33 грн |
| NCS3402DR2G |
|
Виробник: onsemi
Description: IC COMPARATOR 2 GEN PUR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2.5V ~ 16V
Supplier Device Package: 8-SOIC
Propagation Delay (Max): 220µs (Typ)
Current - Quiescent (Max): 640nA
Voltage - Input Offset (Max): 3.6mV @ 15V
Current - Input Bias (Max): 250pA @ 15V
Current - Output (Typ): 10mA
CMRR, PSRR (Typ): 88dB CMRR, 105dB PSRR
Description: IC COMPARATOR 2 GEN PUR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2.5V ~ 16V
Supplier Device Package: 8-SOIC
Propagation Delay (Max): 220µs (Typ)
Current - Quiescent (Max): 640nA
Voltage - Input Offset (Max): 3.6mV @ 15V
Current - Input Bias (Max): 250pA @ 15V
Current - Output (Typ): 10mA
CMRR, PSRR (Typ): 88dB CMRR, 105dB PSRR
на замовлення 5513 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 58.66 грн |
| 10+ | 49.61 грн |
| 25+ | 46.64 грн |
| 100+ | 33.17 грн |
| 250+ | 28.23 грн |
| 500+ | 26.82 грн |
| 1000+ | 20.13 грн |
| FDLL914B |
Виробник: onsemi
Description: DIODE GEN PURP 100V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE GEN PURP 100V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 3660 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 13.54 грн |
| 24+ | 12.09 грн |
| 100+ | 6.59 грн |
| 500+ | 3.81 грн |
| 1000+ | 2.59 грн |
| KST3906MTF |
|
Виробник: onsemi
Description: TRANS PNP 40V 0.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
Description: TRANS PNP 40V 0.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
товар відсутній
| KSA812YMTF |
|
Виробник: onsemi
Description: TRANS PNP 50V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS PNP 50V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
товар відсутній
| MMBT2369 |
|
Виробник: onsemi
Description: TRANS NPN 15V 0.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 30µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 350 mW
Description: TRANS NPN 15V 0.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 30µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 350 mW
товар відсутній
| FJX3904TF |
|
Виробник: onsemi
Description: TRANS NPN 40V 0.2A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-323
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
Description: TRANS NPN 40V 0.2A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-323
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
товар відсутній
| BCW89 | |
|
Виробник: onsemi
Description: TRANS PNP 60V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
Description: TRANS PNP 60V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
товар відсутній
| KST43MTF |
|
Виробник: onsemi
Description: TRANS NPN 200V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 350 mW
Description: TRANS NPN 200V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 350 mW
товар відсутній
| FJX992TF |
|
Виробник: onsemi
Description: TRANS PNP 120V 0.1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 235 mW
Description: TRANS PNP 120V 0.1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 235 mW
на замовлення 1727 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 28.58 грн |
| 15+ | 19.63 грн |
| 100+ | 9.87 грн |
| 500+ | 8.21 грн |
| 1000+ | 6.39 грн |
| MMSZ5255B |
|
Виробник: onsemi
Description: DIODE ZENER 28V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 28 V
Impedance (Max) (Zzt): 44 Ohms
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Description: DIODE ZENER 28V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 28 V
Impedance (Max) (Zzt): 44 Ohms
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
товар відсутній
| MPSA05RA |
|
Виробник: onsemi
Description: TRANS NPN 60V 0.5A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: TRANS NPN 60V 0.5A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
на замовлення 7814 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.33 грн |
| 17+ | 17.16 грн |
| 100+ | 10.84 грн |
| 500+ | 7.59 грн |
| 1000+ | 6.75 грн |
| 1N5231CTR |
|
Виробник: onsemi
Description: DIODE ZENER 5.1V 500MW DO35
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Description: DIODE ZENER 5.1V 500MW DO35
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
на замовлення 58388 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.79 грн |
| 28+ | 10.65 грн |
| 100+ | 5.22 грн |
| 500+ | 4.09 грн |
| 1000+ | 2.84 грн |
| 2000+ | 2.46 грн |
| 1N5243BTR |
|
Виробник: onsemi
Description: DIODE ZENER 13V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Description: DIODE ZENER 13V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
на замовлення 36885 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 7.52 грн |
| 58+ | 5 грн |
| 107+ | 2.71 грн |
| 500+ | 1.99 грн |
| 1000+ | 1.39 грн |
| 2000+ | 1.15 грн |