Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MMBZ5230BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.225W; 4.7V; 20mA; SMD; reel,tape; SOT23; Ir: 5uA Mounting: SMD Semiconductor structure: single diode Zener voltage: 4.7V Zener current: 20mA Leakage current: 5µA Power dissipation: 0.225W Kind of package: reel; tape Type of diode: Zener Case: SOT23 Tolerance: ±5% |
на замовлення 2961 шт: термін постачання 21-30 дні (днів) |
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MUN5111DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: PNP x2 Power dissipation: 0.187W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 10kΩ Mounting: SMD Case: SC70-6; SC88; SOT363 |
на замовлення 1050 шт: термін постачання 21-30 дні (днів) |
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MUN5111T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.202W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.202W Case: SC70; SOT323 Current gain: 35...60 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
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MUN5115DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; 10kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ |
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MUN5335DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ |
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SMUN5111DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 10kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
на замовлення 2930 шт: термін постачання 21-30 дні (днів) |
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SMUN5111T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
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SMUN5114DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 47kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
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SMUN5115DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; 10kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry |
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MMBZ5239BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.225W; 9.1V; 20mA; SMD; reel,tape; SOT23; Ir: 3uA Type of diode: Zener Power dissipation: 0.225W Zener voltage: 9.1V Zener current: 20mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 3µA |
на замовлення 2975 шт: термін постачання 21-30 дні (днів) |
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BD244A | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 6A; 65W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 6A Power dissipation: 65W Case: TO220AB Current gain: 30 Mounting: THT Kind of package: tube |
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IRF530A | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.9A; 55W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 9.9A Power dissipation: 55W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced |
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NCP511SN15T1G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.245V Output voltage: 1.5V Output current: 0.15A Case: TSOP5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...6V Manufacturer series: NCP511 |
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NCP511SN28T1G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.1V Output voltage: 2.8V Output current: 0.15A Case: TSOP5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 3.8...6V Manufacturer series: NCP511 |
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FUSB252GEVB | ONSEMI |
Category: Microchip development kits Description: Dev.kit: evaluation Type of development kit: evaluation |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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2N6387G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 60V; 10A; 2W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 10A Power dissipation: 2W Case: TO220AB Mounting: THT Kind of package: tube |
на замовлення 37 шт: термін постачання 21-30 дні (днів) |
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KSC2752OSTU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 0.5A; 1W; TO126ISO Mounting: THT Kind of package: tube Current gain: 30...60 Collector current: 0.5A Pulsed collector current: 1A Type of transistor: NPN Power dissipation: 1W Polarisation: bipolar Case: TO126ISO Collector-emitter voltage: 400V |
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NCP511SN30T1G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.1V Output voltage: 3V Output current: 0.15A Case: TSOP5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 4...6V Manufacturer series: NCP511 |
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CAV24C16YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2048x8bit Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape Operating voltage: 2.5...5.5V |
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BZX84C47LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 47V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
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BZX84C47LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 47V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA |
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2N6292G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 7A Power dissipation: 40W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 4MHz |
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FDB088N08 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 60A; Idm: 340A; 160W; D2PAK Mounting: SMD Case: D2PAK Kind of package: reel; tape Power dissipation: 160W Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 340A Drain-source voltage: 75V Drain current: 60A On-state resistance: 8.8mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 118nC |
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NLSX0102FCT1G | ONSEMI |
Category: Level translators Description: IC: digital; 2bit,translator; Ch: 2; CMOS; 1.65÷5.5VDC; SMD Type of integrated circuit: digital Kind of integrated circuit: 2bit; translator Number of channels: 2 Technology: CMOS Supply voltage: 1.65...5.5V DC Mounting: SMD Case: flip chip8 Operating temperature: -40...85°C Kind of package: reel; tape |
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NLSX0102FCT2G | ONSEMI |
Category: Level translators Description: IC: digital; 2bit,translator; Ch: 2; CMOS; 1.65÷5.5VDC; SMD Type of integrated circuit: digital Kind of integrated circuit: 2bit; translator Number of channels: 2 Technology: CMOS Supply voltage: 1.65...5.5V DC Mounting: SMD Case: flip chip8 Operating temperature: -40...85°C Kind of package: reel; tape |
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1N914TR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.3A; reel,tape; DO35; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Case: DO35 Kind of package: reel; tape |
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NRVUS360VBT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Case: SMB Max. forward voltage: 1.25V Max. forward impulse current: 100A Reverse recovery time: 75ns Kind of package: reel; tape Application: automotive industry |
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NRVBS360T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; SMC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Case: SMC Max. forward voltage: 0.63V Max. forward impulse current: 125A Kind of package: reel; tape Application: automotive industry |
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NRVTS360ETFSTAG | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; WDFN8; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Case: WDFN8 Max. forward voltage: 0.9V Max. load current: 6A Max. forward impulse current: 50A Kind of package: reel; tape Application: automotive industry |
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NRVTS360ETFSWFTAG | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; WDFN8; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Case: WDFN8 Max. forward voltage: 0.9V Max. load current: 6A Max. forward impulse current: 50A Kind of package: reel; tape Application: automotive industry |
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BAR43S | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT23; 5ns; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Case: SOT23 Max. forward impulse current: 0.75A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.29W |
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NCV8135AMT040TBG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator Type of integrated circuit: voltage regulator |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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NTR0202PLT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.4A; 0.225W; SOT23 On-state resistance: 0.55Ω Type of transistor: P-MOSFET Power dissipation: 0.225W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2.18nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SOT23 Drain-source voltage: -20V Drain current: -0.4A |
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FDS8813NZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18.5A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 18.5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 6.6mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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74AUP1G95FHX | ONSEMI |
Category: Gates, inverters Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; CMOS Technology: CMOS Case: MicroPak6 Mounting: SMD Kind of package: reel; tape Manufacturer series: AUP Operating temperature: -40...85°C Kind of input: with Schmitt trigger Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR Kind of integrated circuit: buffer; inverter; Schmitt trigger Family: AUP Number of inputs: 3 Supply voltage: 0.8...3.6V DC Type of integrated circuit: digital Number of channels: 1 Kind of output: open drain |
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74AUP1G97FHX | ONSEMI |
Category: Gates, inverters Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; CMOS Technology: CMOS Case: MicroPak6 Mounting: SMD Kind of package: reel; tape Manufacturer series: AUP Operating temperature: -40...85°C Kind of input: with Schmitt trigger Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR Kind of integrated circuit: buffer; inverter; Schmitt trigger Family: AUP Number of inputs: 3 Supply voltage: 0.8...3.6V DC Type of integrated circuit: digital Number of channels: 1 |
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NC7SV08FHX | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 1; CMOS; SMD; uDFN6; TinyLogic; -40÷85°C Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: uDFN6 Manufacturer series: TinyLogic Supply voltage: 0.9...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: NC |
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NL27WZ86USG | ONSEMI |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 2; IN: 2; SMD; US8; 1.65÷5.5VDC; -55÷125°C; 10uA Type of integrated circuit: digital Kind of gate: XOR Number of channels: dual; 2 Number of inputs: 2 Mounting: SMD Case: US8 Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 10µA |
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FJPF2145TU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 800V; 5A; 40W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube Frequency: 15MHz Collector-emitter voltage: 800V Current gain: 20...40 Collector current: 5A Type of transistor: NPN Power dissipation: 40W Polarisation: bipolar |
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MM3Z20VC | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 20V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 20V Kind of package: reel; tape Case: SOD323F Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Leakage current: 45nA Max. forward voltage: 1V |
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MM3Z20VST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 20V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode |
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MM3Z20VT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 20V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode |
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SZMM3Z20VT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 20V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±6% Semiconductor structure: single diode Application: automotive industry |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
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FDMS7680 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 80A; 33W; Power56 Mounting: SMD Drain current: 28A On-state resistance: 10.1mΩ Type of transistor: N-MOSFET Power dissipation: 33W Polarisation: unipolar Kind of package: reel; tape Gate charge: 28nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Case: Power56 Drain-source voltage: 30V |
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74LCX138BQX | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 1; SMD; WQFN16; LCX; 10uA Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 1 Mounting: SMD Case: WQFN16 Manufacturer series: LCX Supply voltage: 2...3.6V DC Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 10µA |
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74VHC139M | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 2; SMD; SO16; VHC; 2÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 2 Mounting: SMD Case: SO16 Manufacturer series: VHC Supply voltage: 2...5.5V DC Kind of package: tube Operating temperature: -40...85°C Quiescent current: 40µA |
на замовлення 228 шт: термін постачання 21-30 дні (днів) |
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NCP161BFCT280T2G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 450mA; WLCSP4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.29V Output voltage: 2.8V Output current: 0.45A Case: WLCSP4 Mounting: SMD Manufacturer series: NCP161 Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.9...5.5V |
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NCP156AAFCT105280T2G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.05V,2.8V; 250÷500mA Mounting: SMD Case: WLCSP6 Tolerance: ±1% Operating temperature: -40...125°C Manufacturer series: NCP156 Number of channels: 2 Input voltage: 0.8...3.6V Output current: 250...500mA Output voltage: 1.05V; 2.8V Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator |
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FDMC8554 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 16.5A; Idm: 36A; 41W; Power33 Mounting: SMD Kind of package: reel; tape Gate charge: 62nC Case: Power33 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 36A Polarisation: unipolar Power dissipation: 41W Type of transistor: N-MOSFET On-state resistance: 7.1mΩ Drain current: 16.5A Drain-source voltage: 20V |
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FDMA507PZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7.8A; 2.4W; MicroFET Case: MicroFET Mounting: SMD Kind of package: reel; tape Drain current: -7.8A On-state resistance: 35mΩ Type of transistor: P-MOSFET Power dissipation: 2.4W Polarisation: unipolar Gate charge: 42nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±8V Drain-source voltage: -20V |
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CAT34C02VP2IGT4A | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 2kb EEPROM Interface: I2C Memory organisation: 256x8bit Clock frequency: 400kHz Mounting: SMD Case: TDFN8 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape Operating voltage: 1.7...5.5V |
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CAT34C02YI-GT5A | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 2kb EEPROM Interface: I2C Memory organisation: 256x8bit Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape Operating voltage: 1.7...5.5V |
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FODM2705 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Mini-flat 4pin Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 50-300%@5mA Case: Mini-flat 4pin |
на замовлення 2731 шт: термін постачання 21-30 дні (днів) |
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FODM2705R2 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 40V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 50-300%@5mA Collector-emitter voltage: 40V Case: MFP4 Max. off-state voltage: 6V Manufacturer series: FODM2705 |
на замовлення 2490 шт: термін постачання 21-30 дні (днів) |
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MMSZ5268BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 82V; SMD; reel,tape; SOD123; single diode Mounting: SMD Case: SOD123 Kind of package: reel; tape Tolerance: ±5% Type of diode: Zener Power dissipation: 0.5W Semiconductor structure: single diode Zener voltage: 82V |
на замовлення 2084 шт: термін постачання 21-30 дні (днів) |
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J105 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET; unipolar; 0.625W; TO92; 10mA Gate current: 10mA Type of transistor: N-JFET Power dissipation: 0.625W Polarisation: unipolar Kind of package: bulk Gate-source voltage: -25V Mounting: THT Case: TO92 |
товар відсутній |
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DTA113EM3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.26W; SOT723; R1: 1kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.26W Case: SOT723 Current gain: 3...5 Mounting: SMD Kind of package: reel; tape Base resistor: 1kΩ Base-emitter resistor: 1kΩ |
на замовлення 23990 шт: термін постачання 21-30 дні (днів) |
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NL3S22SMUTAG | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; USB switch; Ch: 2; UQFN10; 2.7÷5.5VDC; reel,tape Supply voltage: 2.7...5.5V DC Mounting: SMD Operating temperature: -40...85°C Kind of output: DPDT Kind of package: reel; tape Kind of integrated circuit: USB switch Case: UQFN10 Type of integrated circuit: analog switch Number of channels: 2 |
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FGH40N60SMD-F085 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT Type of transistor: IGBT |
товар відсутній |
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FGAF40N60SMD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT Type of transistor: IGBT |
товар відсутній |
MMBZ5230BLT1G |
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 4.7V; 20mA; SMD; reel,tape; SOT23; Ir: 5uA
Mounting: SMD
Semiconductor structure: single diode
Zener voltage: 4.7V
Zener current: 20mA
Leakage current: 5µA
Power dissipation: 0.225W
Kind of package: reel; tape
Type of diode: Zener
Case: SOT23
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 4.7V; 20mA; SMD; reel,tape; SOT23; Ir: 5uA
Mounting: SMD
Semiconductor structure: single diode
Zener voltage: 4.7V
Zener current: 20mA
Leakage current: 5µA
Power dissipation: 0.225W
Kind of package: reel; tape
Type of diode: Zener
Case: SOT23
Tolerance: ±5%
на замовлення 2961 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
42+ | 9.68 грн |
55+ | 6.89 грн |
100+ | 3.75 грн |
122+ | 3.09 грн |
500+ | 2.04 грн |
751+ | 1.17 грн |
2067+ | 1.1 грн |
MUN5111DW1T1G |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.187W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.187W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
на замовлення 1050 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
60+ | 7.02 грн |
120+ | 3.24 грн |
380+ | 2.32 грн |
1040+ | 2.2 грн |
MUN5111T1G |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.202W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.202W
Case: SC70; SOT323
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.202W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.202W
Case: SC70; SOT323
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
товар відсутній
MUN5115DW1T1G |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
товар відсутній
MUN5335DW1T1G |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
товар відсутній
SMUN5111DW1T1G |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
на замовлення 2930 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
35+ | 12.75 грн |
40+ | 10.49 грн |
100+ | 9.29 грн |
110+ | 8.32 грн |
295+ | 7.87 грн |
SMUN5111T1G |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
товар відсутній
SMUN5114DW1T1G |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 47kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 47kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
товар відсутній
SMUN5115DW1T1G |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
товар відсутній
MMBZ5239BLT1G |
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 9.1V; 20mA; SMD; reel,tape; SOT23; Ir: 3uA
Type of diode: Zener
Power dissipation: 0.225W
Zener voltage: 9.1V
Zener current: 20mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 9.1V; 20mA; SMD; reel,tape; SOT23; Ir: 3uA
Type of diode: Zener
Power dissipation: 0.225W
Zener voltage: 9.1V
Zener current: 20mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
на замовлення 2975 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
150+ | 2.97 грн |
225+ | 1.81 грн |
500+ | 1.63 грн |
725+ | 1.25 грн |
1950+ | 1.18 грн |
BD244A |
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Current gain: 30
Mounting: THT
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Current gain: 30
Mounting: THT
Kind of package: tube
товар відсутній
IRF530A |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.9A; 55W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.9A
Power dissipation: 55W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.9A; 55W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.9A
Power dissipation: 55W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
NCP511SN15T1G |
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.245V
Output voltage: 1.5V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: NCP511
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.245V
Output voltage: 1.5V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: NCP511
товар відсутній
NCP511SN28T1G |
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 2.8V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.8...6V
Manufacturer series: NCP511
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 2.8V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.8...6V
Manufacturer series: NCP511
товар відсутній
FUSB252GEVB |
Виробник: ONSEMI
Category: Microchip development kits
Description: Dev.kit: evaluation
Type of development kit: evaluation
Category: Microchip development kits
Description: Dev.kit: evaluation
Type of development kit: evaluation
на замовлення 10 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 8903.82 грн |
4+ | 7143.13 грн |
2N6387G |
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 10A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 10A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
на замовлення 37 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 91.18 грн |
6+ | 66.69 грн |
10+ | 52.38 грн |
19+ | 46.38 грн |
KSC2752OSTU |
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 0.5A; 1W; TO126ISO
Mounting: THT
Kind of package: tube
Current gain: 30...60
Collector current: 0.5A
Pulsed collector current: 1A
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
Case: TO126ISO
Collector-emitter voltage: 400V
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 0.5A; 1W; TO126ISO
Mounting: THT
Kind of package: tube
Current gain: 30...60
Collector current: 0.5A
Pulsed collector current: 1A
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
Case: TO126ISO
Collector-emitter voltage: 400V
товар відсутній
NCP511SN30T1G |
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 3V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...6V
Manufacturer series: NCP511
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 3V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...6V
Manufacturer series: NCP511
товар відсутній
CAV24C16YE-GT3 |
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
товар відсутній
BZX84C47LT1G |
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
товар відсутній
BZX84C47LT1G |
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
товар відсутній
2N6292G |
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 7A
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 7A
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 4MHz
товар відсутній
FDB088N08 |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 60A; Idm: 340A; 160W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Power dissipation: 160W
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 340A
Drain-source voltage: 75V
Drain current: 60A
On-state resistance: 8.8mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 118nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 60A; Idm: 340A; 160W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Power dissipation: 160W
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 340A
Drain-source voltage: 75V
Drain current: 60A
On-state resistance: 8.8mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 118nC
товар відсутній
NLSX0102FCT1G |
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; 2bit,translator; Ch: 2; CMOS; 1.65÷5.5VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; translator
Number of channels: 2
Technology: CMOS
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: flip chip8
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Level translators
Description: IC: digital; 2bit,translator; Ch: 2; CMOS; 1.65÷5.5VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; translator
Number of channels: 2
Technology: CMOS
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: flip chip8
Operating temperature: -40...85°C
Kind of package: reel; tape
товар відсутній
NLSX0102FCT2G |
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; 2bit,translator; Ch: 2; CMOS; 1.65÷5.5VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; translator
Number of channels: 2
Technology: CMOS
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: flip chip8
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Level translators
Description: IC: digital; 2bit,translator; Ch: 2; CMOS; 1.65÷5.5VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; translator
Number of channels: 2
Technology: CMOS
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: flip chip8
Operating temperature: -40...85°C
Kind of package: reel; tape
товар відсутній
1N914TR |
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DO35
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DO35
Kind of package: reel; tape
товар відсутній
NRVUS360VBT3G |
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 100A
Reverse recovery time: 75ns
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 100A
Reverse recovery time: 75ns
Kind of package: reel; tape
Application: automotive industry
товар відсутній
NRVBS360T3G |
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 0.63V
Max. forward impulse current: 125A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 0.63V
Max. forward impulse current: 125A
Kind of package: reel; tape
Application: automotive industry
товар відсутній
NRVTS360ETFSTAG |
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; WDFN8; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: WDFN8
Max. forward voltage: 0.9V
Max. load current: 6A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; WDFN8; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: WDFN8
Max. forward voltage: 0.9V
Max. load current: 6A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
товар відсутній
NRVTS360ETFSWFTAG |
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; WDFN8; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: WDFN8
Max. forward voltage: 0.9V
Max. load current: 6A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; WDFN8; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: WDFN8
Max. forward voltage: 0.9V
Max. load current: 6A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
товар відсутній
BAR43S |
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT23; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Case: SOT23
Max. forward impulse current: 0.75A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.29W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT23; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Case: SOT23
Max. forward impulse current: 0.75A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.29W
товар відсутній
NCV8135AMT040TBG |
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
108+ | 25.58 грн |
1100+ | 22.85 грн |
NTR0202PLT1G |
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.4A; 0.225W; SOT23
On-state resistance: 0.55Ω
Type of transistor: P-MOSFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23
Drain-source voltage: -20V
Drain current: -0.4A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.4A; 0.225W; SOT23
On-state resistance: 0.55Ω
Type of transistor: P-MOSFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23
Drain-source voltage: -20V
Drain current: -0.4A
товар відсутній
FDS8813NZ |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
74AUP1G95FHX |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; CMOS
Technology: CMOS
Case: MicroPak6
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: AUP
Operating temperature: -40...85°C
Kind of input: with Schmitt trigger
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Kind of integrated circuit: buffer; inverter; Schmitt trigger
Family: AUP
Number of inputs: 3
Supply voltage: 0.8...3.6V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of output: open drain
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; CMOS
Technology: CMOS
Case: MicroPak6
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: AUP
Operating temperature: -40...85°C
Kind of input: with Schmitt trigger
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Kind of integrated circuit: buffer; inverter; Schmitt trigger
Family: AUP
Number of inputs: 3
Supply voltage: 0.8...3.6V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of output: open drain
товар відсутній
74AUP1G97FHX |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; CMOS
Technology: CMOS
Case: MicroPak6
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: AUP
Operating temperature: -40...85°C
Kind of input: with Schmitt trigger
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Kind of integrated circuit: buffer; inverter; Schmitt trigger
Family: AUP
Number of inputs: 3
Supply voltage: 0.8...3.6V DC
Type of integrated circuit: digital
Number of channels: 1
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; CMOS
Technology: CMOS
Case: MicroPak6
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: AUP
Operating temperature: -40...85°C
Kind of input: with Schmitt trigger
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Kind of integrated circuit: buffer; inverter; Schmitt trigger
Family: AUP
Number of inputs: 3
Supply voltage: 0.8...3.6V DC
Type of integrated circuit: digital
Number of channels: 1
товар відсутній
NC7SV08FHX |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 1; CMOS; SMD; uDFN6; TinyLogic; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: uDFN6
Manufacturer series: TinyLogic
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: NC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 1; CMOS; SMD; uDFN6; TinyLogic; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: uDFN6
Manufacturer series: TinyLogic
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: NC
товар відсутній
NL27WZ86USG |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 2; IN: 2; SMD; US8; 1.65÷5.5VDC; -55÷125°C; 10uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: dual; 2
Number of inputs: 2
Mounting: SMD
Case: US8
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 10µA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 2; IN: 2; SMD; US8; 1.65÷5.5VDC; -55÷125°C; 10uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: dual; 2
Number of inputs: 2
Mounting: SMD
Case: US8
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 10µA
товар відсутній
FJPF2145TU |
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 5A; 40W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Frequency: 15MHz
Collector-emitter voltage: 800V
Current gain: 20...40
Collector current: 5A
Type of transistor: NPN
Power dissipation: 40W
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 5A; 40W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Frequency: 15MHz
Collector-emitter voltage: 800V
Current gain: 20...40
Collector current: 5A
Type of transistor: NPN
Power dissipation: 40W
Polarisation: bipolar
товар відсутній
MM3Z20VC |
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 20V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 20V
Kind of package: reel; tape
Case: SOD323F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 45nA
Max. forward voltage: 1V
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 20V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 20V
Kind of package: reel; tape
Case: SOD323F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 45nA
Max. forward voltage: 1V
товар відсутній
MM3Z20VST1G |
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
товар відсутній
MM3Z20VT1G |
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
товар відсутній
SZMM3Z20VT1G |
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
Application: automotive industry
на замовлення 60 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
60+ | 5.99 грн |
FDMS7680 |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 80A; 33W; Power56
Mounting: SMD
Drain current: 28A
On-state resistance: 10.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: Power56
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 80A; 33W; Power56
Mounting: SMD
Drain current: 28A
On-state resistance: 10.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: Power56
Drain-source voltage: 30V
товар відсутній
74LCX138BQX |
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; SMD; WQFN16; LCX; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Mounting: SMD
Case: WQFN16
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 10µA
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; SMD; WQFN16; LCX; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Mounting: SMD
Case: WQFN16
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 10µA
товар відсутній
74VHC139M |
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; SMD; SO16; VHC; 2÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Mounting: SMD
Case: SO16
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 40µA
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; SMD; SO16; VHC; 2÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Mounting: SMD
Case: SO16
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 40µA
на замовлення 228 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 53.26 грн |
10+ | 41.44 грн |
36+ | 24.8 грн |
98+ | 23.45 грн |
NCP161BFCT280T2G |
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 450mA; WLCSP4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.29V
Output voltage: 2.8V
Output current: 0.45A
Case: WLCSP4
Mounting: SMD
Manufacturer series: NCP161
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 450mA; WLCSP4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.29V
Output voltage: 2.8V
Output current: 0.45A
Case: WLCSP4
Mounting: SMD
Manufacturer series: NCP161
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
товар відсутній
NCP156AAFCT105280T2G |
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.05V,2.8V; 250÷500mA
Mounting: SMD
Case: WLCSP6
Tolerance: ±1%
Operating temperature: -40...125°C
Manufacturer series: NCP156
Number of channels: 2
Input voltage: 0.8...3.6V
Output current: 250...500mA
Output voltage: 1.05V; 2.8V
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.05V,2.8V; 250÷500mA
Mounting: SMD
Case: WLCSP6
Tolerance: ±1%
Operating temperature: -40...125°C
Manufacturer series: NCP156
Number of channels: 2
Input voltage: 0.8...3.6V
Output current: 250...500mA
Output voltage: 1.05V; 2.8V
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
товар відсутній
FDMC8554 |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16.5A; Idm: 36A; 41W; Power33
Mounting: SMD
Kind of package: reel; tape
Gate charge: 62nC
Case: Power33
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 36A
Polarisation: unipolar
Power dissipation: 41W
Type of transistor: N-MOSFET
On-state resistance: 7.1mΩ
Drain current: 16.5A
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16.5A; Idm: 36A; 41W; Power33
Mounting: SMD
Kind of package: reel; tape
Gate charge: 62nC
Case: Power33
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 36A
Polarisation: unipolar
Power dissipation: 41W
Type of transistor: N-MOSFET
On-state resistance: 7.1mΩ
Drain current: 16.5A
Drain-source voltage: 20V
товар відсутній
FDMA507PZ |
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.8A; 2.4W; MicroFET
Case: MicroFET
Mounting: SMD
Kind of package: reel; tape
Drain current: -7.8A
On-state resistance: 35mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 42nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: -20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.8A; 2.4W; MicroFET
Case: MicroFET
Mounting: SMD
Kind of package: reel; tape
Drain current: -7.8A
On-state resistance: 35mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 42nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: -20V
товар відсутній
CAT34C02VP2IGT4A |
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: TDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: TDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
товар відсутній
CAT34C02YI-GT5A |
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
товар відсутній
FODM2705 |
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Mini-flat 4pin
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 50-300%@5mA
Case: Mini-flat 4pin
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Mini-flat 4pin
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 50-300%@5mA
Case: Mini-flat 4pin
на замовлення 2731 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 45.19 грн |
14+ | 27.95 грн |
50+ | 20.46 грн |
55+ | 16.11 грн |
150+ | 15.21 грн |
500+ | 14.61 грн |
FODM2705R2 |
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 40V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 50-300%@5mA
Collector-emitter voltage: 40V
Case: MFP4
Max. off-state voltage: 6V
Manufacturer series: FODM2705
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 40V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 50-300%@5mA
Collector-emitter voltage: 40V
Case: MFP4
Max. off-state voltage: 6V
Manufacturer series: FODM2705
на замовлення 2490 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 53.26 грн |
13+ | 30.05 грн |
47+ | 18.88 грн |
128+ | 17.83 грн |
500+ | 17.16 грн |
MMSZ5268BT1G |
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 82V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Kind of package: reel; tape
Tolerance: ±5%
Type of diode: Zener
Power dissipation: 0.5W
Semiconductor structure: single diode
Zener voltage: 82V
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 82V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Kind of package: reel; tape
Tolerance: ±5%
Type of diode: Zener
Power dissipation: 0.5W
Semiconductor structure: single diode
Zener voltage: 82V
на замовлення 2084 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
148+ | 2.74 грн |
163+ | 2.3 грн |
250+ | 2.04 грн |
493+ | 1.77 грн |
1353+ | 1.67 грн |
J105 |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 0.625W; TO92; 10mA
Gate current: 10mA
Type of transistor: N-JFET
Power dissipation: 0.625W
Polarisation: unipolar
Kind of package: bulk
Gate-source voltage: -25V
Mounting: THT
Case: TO92
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 0.625W; TO92; 10mA
Gate current: 10mA
Type of transistor: N-JFET
Power dissipation: 0.625W
Polarisation: unipolar
Kind of package: bulk
Gate-source voltage: -25V
Mounting: THT
Case: TO92
товар відсутній
DTA113EM3T5G |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.26W; SOT723; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.26W
Case: SOT723
Current gain: 3...5
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.26W; SOT723; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.26W
Case: SOT723
Current gain: 3...5
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
на замовлення 23990 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
60+ | 7.02 грн |
90+ | 4.44 грн |
240+ | 3.67 грн |
650+ | 3.47 грн |
8000+ | 3.33 грн |
NL3S22SMUTAG |
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; UQFN10; 2.7÷5.5VDC; reel,tape
Supply voltage: 2.7...5.5V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: DPDT
Kind of package: reel; tape
Kind of integrated circuit: USB switch
Case: UQFN10
Type of integrated circuit: analog switch
Number of channels: 2
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; UQFN10; 2.7÷5.5VDC; reel,tape
Supply voltage: 2.7...5.5V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: DPDT
Kind of package: reel; tape
Kind of integrated circuit: USB switch
Case: UQFN10
Type of integrated circuit: analog switch
Number of channels: 2
товар відсутній
FGH40N60SMD-F085 |
товар відсутній
FGAF40N60SMD |
товар відсутній