| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MBT3904DW1T1G | ONSEMI |
 Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.15W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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PZT3904T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 1W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
на замовлення 450 шт: термін постачання 21-30 дні (днів) |
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MUN5135DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: PNP x2 Power dissipation: 0.187W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Mounting: SMD Case: SC70-6; SC88; SOT363 |
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MMBD914LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 75ns; SOT23; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: switching Case: SOT23 Max. off-state voltage: 100V Load current: 0.2A Semiconductor structure: single diode Reverse recovery time: 75ns |
на замовлення 12480 шт: термін постачання 21-30 дні (днів) |
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MJ15001G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 140V; 15A; 200W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 15A Power dissipation: 200W Case: TO3 Current gain: 25...150 Mounting: THT Kind of package: in-tray Frequency: 2MHz |
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SBAS40-04LT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.12A; SOT23; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.12A Semiconductor structure: double series Capacitance: 5pF Max. forward voltage: 1V Case: SOT23 Kind of package: reel; tape Leakage current: 1µA Max. forward impulse current: 0.6A Power dissipation: 0.225W |
на замовлення 1460 шт: термін постачання 21-30 дні (днів) |
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MMBTH10LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 25V; 225/300mW; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 25V Power dissipation: 0.225/0.3W Case: SOT23 Current gain: 60...240 Mounting: SMD Kind of package: reel; tape Frequency: 650MHz |
на замовлення 2930 шт: термін постачання 21-30 дні (днів) |
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MC79L12ABDR2G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; -12V; 0.1A; SO8; SMD; ±2%; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.7V Output voltage: -12V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Manufacturer series: MC79L00A |
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MC79L12ACDR2G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; -12V; 0.1A; SO8; SMD; 0÷125°C Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.7V Output voltage: -12V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±2% Number of channels: 1 Manufacturer series: MC79L00A |
на замовлення 808 шт: термін постачання 21-30 дні (днів) |
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| MC79L12ACPG | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; -12V; 0.1A; TO92; THT; bulk Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.7V Output voltage: -12V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: bulk Operating temperature: 0...125°C Tolerance: ±2% Number of channels: 1 Manufacturer series: MC79L00A |
на замовлення 2831 шт: термін постачання 21-30 дні (днів) |
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| MC79L12ACPRAG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; -12V; 0.1A; TO92; THT; 0÷125°C Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.7V Output voltage: -12V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±2% Number of channels: 1 Manufacturer series: MC79L00A |
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FDD2582 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 95W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 150V Drain current: 21A Power dissipation: 95W Case: DPAK Gate-source voltage: ±20V On-state resistance: 172mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
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BAV70TT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT416; Ifsm: 500mA; 360mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Capacitance: 1.5pF Case: SOT416 Max. forward impulse current: 0.5A Power dissipation: 0.36W Kind of package: reel; tape |
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BC847BTT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2/0.3W; SOT416 Mounting: SMD Case: SOT416 Kind of package: reel; tape Power dissipation: 0.2/0.3W Frequency: 100MHz Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Current gain: 150...450 Collector current: 0.1A |
на замовлення 6440 шт: термін постачання 21-30 дні (днів) |
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BC857BTT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.2W; SOT416 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT416 Current gain: 150...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 4890 шт: термін постачання 21-30 дні (днів) |
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BAS16TT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT416; Ufmax: 1.25V; 360mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Semiconductor structure: single diode Capacitance: 2pF Kind of package: reel; tape Max. forward impulse current: 0.5A Case: SOT416 Max. forward voltage: 1.25V Leakage current: 50µA Power dissipation: 0.36W Reverse recovery time: 6ns |
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MBR0520LT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 0.5A; SOD123; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 20V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.33V Case: SOD123 Kind of package: reel; tape Max. forward impulse current: 5.5A |
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| ALS-GEVB | ONSEMI |
Category: Development kits - others Description: Expansion board; prototype board; Comp: NOA1305 Type of accessories for development kits: expansion board Kit contents: prototype board Components: NOA1305 Interface: I2C Kind of connector: Pmod connector development kits accessories features: light sensor |
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MJ21194G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 16A Power dissipation: 250W Case: TO3 Current gain: 8...75 Mounting: THT Kind of package: in-tray Frequency: 4MHz |
на замовлення 86 шт: термін постачання 21-30 дні (днів) |
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1N5931BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 3W; 18V; reel,tape; CASE59; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 18V Kind of package: reel; tape Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 2185 шт: термін постачання 21-30 дні (днів) |
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BAT54CWT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323; 5ns; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Capacitance: 7.6pF Case: SOT323 Max. forward voltage: 0.8V Max. load current: 0.3A Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W |
на замовлення 1720 шт: термін постачання 21-30 дні (днів) |
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SBAT54CWT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323; 5ns; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Capacitance: 10pF Case: SOT323 Max. forward voltage: 0.8V Max. load current: 0.3A Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W |
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BAV99WT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.215A; 4ns; SOT323; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: double series Capacitance: 2pF Case: SOT323 Kind of package: reel; tape |
на замовлення 1471 шт: термін постачання 21-30 дні (днів) |
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SBAV99WT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 215mA; 6ns; SC70; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.215A Reverse recovery time: 6ns Semiconductor structure: double series Capacitance: 1.5pF Case: SC70 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 50µA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
на замовлення 75 шт: термін постачання 21-30 дні (днів) |
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NCP3420DR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side,gate driver; SO8; 4.6÷13.2VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Case: SO8 Supply voltage: 4.6...13.2V DC Mounting: SMD Operating temperature: 0...85°C |
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NCP51530BDR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side,gate driver; SO8; -3÷3.5A; 700V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Case: SO8 Output current: -3...3.5A Supply voltage: 10...17V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 15ns Pulse fall time: 15ns Voltage class: 700V |
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| NCP51530BMNTWG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side,gate driver; DFN10; -3÷3.5A; 700V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Case: DFN10 Output current: -3...3.5A Supply voltage: 10...17V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 15ns Pulse fall time: 15ns Voltage class: 700V |
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NCP51561BADWR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side,gate driver; SO16; -9÷4.5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Case: SO16 Output current: -9...4.5A Number of channels: 2 Supply voltage: 3...5V DC; 9.5...30V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 19ns Pulse fall time: 19ns |
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NCP51561BBDWR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side,gate driver; SO16; -9÷4.5A; Ch: 2 Mounting: SMD Operating temperature: -40...125°C Output current: -9...4.5A Type of integrated circuit: driver Pulse fall time: 19ns Case: SO16 Kind of integrated circuit: gate driver; high-side; low-side Number of channels: 2 Impulse rise time: 19ns Supply voltage: 3...5V DC; 9.5...30V DC |
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| NCP51705MNTXG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side,gate driver; SiC; QFN24; -6÷6A Supply voltage: -8...0V DC; 10...22V DC Mounting: SMD Operating temperature: -40...125°C Output current: -6...6A Type of integrated circuit: driver Impulse rise time: 15ns Pulse fall time: 15ns Technology: SiC Kind of integrated circuit: gate driver; high-side; low-side Case: QFN24 |
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| NCP51810AMNTWG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side,gate driver; GaN; QFN15; -2÷1A Technology: GaN Case: QFN15 Mounting: SMD Output current: -2...1A Operating temperature: -40...125°C Kind of integrated circuit: gate driver; high-side; low-side Type of integrated circuit: driver Supply voltage: 9...17V DC |
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| NCP51820AMNTWG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side,gate driver; GaN; QFN15; -2÷1A Technology: GaN Case: QFN15 Mounting: SMD Output current: -2...1A Operating temperature: -40...125°C Voltage class: 650V Kind of integrated circuit: gate driver; high-side; low-side Type of integrated circuit: driver Supply voltage: 9...17V DC |
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NCP81075DR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side,gate driver; SO8; -4÷4A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Case: SO8 Output current: -4...4A Number of channels: 2 Supply voltage: 8.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 8ns Pulse fall time: 7ns |
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| NCP81075MTTXG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side,gate driver; WDFN10; -4÷4A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Case: WDFN10 Output current: -4...4A Number of channels: 2 Supply voltage: 8.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 8ns Pulse fall time: 7ns |
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| NRVBSS24NT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 2A; SMB; reel,tape Case: SMB Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 40V Application: automotive industry Max. load current: 3A Load current: 2A Max. forward voltage: 0.5V Max. forward impulse current: 75A Type of diode: Schottky rectifying |
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| CAT24C32C5CTR | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; WLCSP5 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32kb EEPROM Interface: I2C Memory organisation: 4kx8bit Clock frequency: 1MHz Mounting: SMD Case: WLCSP5 Kind of interface: serial Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 1.7...5.5V |
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| CAT24C32HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; uDFN8 Case: uDFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Clock frequency: 1MHz Kind of interface: serial Memory: 32kb EEPROM Operating voltage: 1.7...5.5V Type of integrated circuit: EEPROM memory Interface: I2C Kind of memory: EEPROM Memory organisation: 4kx8bit |
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MC100EPT23DG | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 4; OUT: 2 Type of integrated circuit: digital Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator Number of channels: 2 Supply voltage: 3...3.6V DC Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: tube Number of inputs: 4 Number of outputs: 2 Manufacturer series: 100EPT |
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MC100EPT23DTG | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 4; OUT: 2 Type of integrated circuit: digital Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator Number of channels: 2 Supply voltage: 3...3.6V DC Mounting: SMD Case: TSSOP8 Operating temperature: -40...85°C Kind of package: tube Number of inputs: 4 Number of outputs: 2 Manufacturer series: 100EPT |
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MC100EPT23DTR2G | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 2; SMD; TSSOP8; -40÷85°C; reel,tape; IN: 4; OUT: 2 Type of integrated circuit: digital Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator Number of channels: 2 Mounting: SMD Case: TSSOP8 Operating temperature: -40...85°C Kind of package: reel; tape Number of inputs: 4 Number of outputs: 2 Manufacturer series: 100EPT |
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| MC100EPT23MNR4G | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 2; SMD; VDFN8; -40÷85°C; reel,tape; IN: 4; OUT: 2 Type of integrated circuit: digital Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator Number of channels: 2 Mounting: SMD Case: VDFN8 Operating temperature: -40...85°C Kind of package: reel; tape Number of inputs: 4 Number of outputs: 2 Manufacturer series: 100EPT |
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FDS4935A | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 1.6W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -7A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2455 шт: термін постачання 21-30 дні (днів) |
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FDS4935BZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -6.9A; 1.6W; SO8 Type of transistor: P-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -6.9A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±25V On-state resistance: 35mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 1638 шт: термін постачання 21-30 дні (днів) |
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KSP42BU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Mounting: THT Kind of package: bulk Frequency: 50MHz |
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KSP42TA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz |
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MJE5852G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 400V; 8A; 80W; TO220AB Case: TO220AB Mounting: THT Collector-emitter voltage: 400V Collector current: 8A Type of transistor: PNP Power dissipation: 80W Polarisation: bipolar Kind of package: tube |
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2SC5226A-4-TL-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.15W; SC70 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 10V Collector current: 70mA Power dissipation: 0.15W Case: SC70 Current gain: 90...180 Mounting: SMD Kind of package: reel; tape Frequency: 5...7GHz |
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2SC5226A-5-TL-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.15W; SC70 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 10V Collector current: 70mA Power dissipation: 0.15W Case: SC70 Current gain: 135...270 Mounting: SMD Kind of package: reel; tape Frequency: 5...7GHz |
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NCP1034DR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 10÷18V; SO16; buck Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 2A Frequency: 170...430kHz Mounting: SMD Case: SO16 Topology: buck Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 10...18V |
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| FDG6301N-F085 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Application: automotive industry Drain-source voltage: 25V Drain current: 0.22A On-state resistance: 7Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.3W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±8V |
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| FDMC86259P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -13A; Idm: -20A; 62W; Power33 Kind of package: reel; tape Drain-source voltage: -150V Drain current: -13A On-state resistance: 178mΩ Type of transistor: P-MOSFET Power dissipation: 62W Polarisation: unipolar Gate charge: 32nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -20A Mounting: SMD Case: Power33 |
товар відсутній |
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MBR130LSFT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 1A Max. load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.3V Case: SOD123F Kind of package: reel; tape Max. forward impulse current: 40A |
на замовлення 2290 шт: термін постачання 21-30 дні (днів) |
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MBR130T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.47V Case: SOD123 Kind of package: reel; tape Max. forward impulse current: 5.5A |
на замовлення 1065 шт: термін постачання 21-30 дні (днів) |
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MBR130T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.47V Case: SOD123 Kind of package: reel; tape Max. forward impulse current: 5.5A |
товар відсутній |
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74VHC541M | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20-W Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: SO20-W Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: tube Quiescent current: 40µA |
товар відсутній |
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74VHC541MTC | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: TSSOP20 Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state |
на замовлення 1700 шт: термін постачання 21-30 дні (днів) |
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74VHC541MTCX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: TSSOP20 Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 40µA |
товар відсутній |
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| 74VHC541MX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20-W Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: SO20-W Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 40µA |
товар відсутній |
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74VHCT14AMTC | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: tube Quiescent current: 20µA Kind of input: with Schmitt trigger Family: VHCT |
товар відсутній |
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74VHCT14AMTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: VHCT |
товар відсутній |
| MBT3904DW1T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
на замовлення 40 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 9.38 грн |
| PZT3904T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
на замовлення 450 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 27.36 грн |
| 18+ | 20.25 грн |
| 33+ | 11.11 грн |
| 99+ | 8.49 грн |
| 272+ | 7.99 грн |
| MUN5135DW1T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.187W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.187W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
товар відсутній
| MMBD914LT1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 75ns; SOT23; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Case: SOT23
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 75ns; SOT23; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Case: SOT23
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 75ns
на замовлення 12480 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 4.03 грн |
| 215+ | 1.72 грн |
| 500+ | 1.39 грн |
| 690+ | 1.24 грн |
| 1890+ | 1.18 грн |
| MJ15001G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 15A; 200W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 15A
Power dissipation: 200W
Case: TO3
Current gain: 25...150
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 15A; 200W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 15A
Power dissipation: 200W
Case: TO3
Current gain: 25...150
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
товар відсутній
| SBAS40-04LT1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.12A; SOT23; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double series
Capacitance: 5pF
Max. forward voltage: 1V
Case: SOT23
Kind of package: reel; tape
Leakage current: 1µA
Max. forward impulse current: 0.6A
Power dissipation: 0.225W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.12A; SOT23; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double series
Capacitance: 5pF
Max. forward voltage: 1V
Case: SOT23
Kind of package: reel; tape
Leakage current: 1µA
Max. forward impulse current: 0.6A
Power dissipation: 0.225W
на замовлення 1460 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 3.91 грн |
| 120+ | 3.26 грн |
| 340+ | 2.62 грн |
| 900+ | 2.48 грн |
| MMBTH10LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 225/300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.225/0.3W
Case: SOT23
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 650MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 225/300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.225/0.3W
Case: SOT23
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 650MHz
на замовлення 2930 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 107+ | 3.67 грн |
| 122+ | 3 грн |
| 371+ | 2.29 грн |
| 1021+ | 2.17 грн |
| MC79L12ABDR2G |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.1A; SO8; SMD; ±2%; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: -12V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Manufacturer series: MC79L00A
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.1A; SO8; SMD; ±2%; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: -12V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Manufacturer series: MC79L00A
товар відсутній
| MC79L12ACDR2G |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.1A; SO8; SMD; 0÷125°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: -12V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±2%
Number of channels: 1
Manufacturer series: MC79L00A
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.1A; SO8; SMD; 0÷125°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: -12V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±2%
Number of channels: 1
Manufacturer series: MC79L00A
на замовлення 808 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 26.58 грн |
| 23+ | 16.19 грн |
| 100+ | 10.02 грн |
| 115+ | 7.7 грн |
| 310+ | 7.26 грн |
| MC79L12ACPG |
|
Виробник: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: -12V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Operating temperature: 0...125°C
Tolerance: ±2%
Number of channels: 1
Manufacturer series: MC79L00A
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: -12V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Operating temperature: 0...125°C
Tolerance: ±2%
Number of channels: 1
Manufacturer series: MC79L00A
на замовлення 2831 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 26.58 грн |
| 19+ | 19.6 грн |
| 50+ | 15.39 грн |
| 70+ | 12.34 грн |
| 191+ | 11.69 грн |
| 500+ | 11.54 грн |
| 1000+ | 11.25 грн |
| MC79L12ACPRAG |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.1A; TO92; THT; 0÷125°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: -12V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±2%
Number of channels: 1
Manufacturer series: MC79L00A
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.1A; TO92; THT; 0÷125°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: -12V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±2%
Number of channels: 1
Manufacturer series: MC79L00A
товар відсутній
| FDD2582 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 95W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 95W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 172mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 95W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 95W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 172mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| BAV70TT1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT416; Ifsm: 500mA; 360mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT416
Max. forward impulse current: 0.5A
Power dissipation: 0.36W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT416; Ifsm: 500mA; 360mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT416
Max. forward impulse current: 0.5A
Power dissipation: 0.36W
Kind of package: reel; tape
товар відсутній
| BC847BTT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2/0.3W; SOT416
Mounting: SMD
Case: SOT416
Kind of package: reel; tape
Power dissipation: 0.2/0.3W
Frequency: 100MHz
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Current gain: 150...450
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2/0.3W; SOT416
Mounting: SMD
Case: SOT416
Kind of package: reel; tape
Power dissipation: 0.2/0.3W
Frequency: 100MHz
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Current gain: 150...450
Collector current: 0.1A
на замовлення 6440 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 8.6 грн |
| 59+ | 6.17 грн |
| 112+ | 3.27 грн |
| 500+ | 2.13 грн |
| 552+ | 1.51 грн |
| 1518+ | 1.43 грн |
| BC857BTT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.2W; SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT416
Current gain: 150...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.2W; SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT416
Current gain: 150...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 4890 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 10.16 грн |
| 55+ | 6.68 грн |
| 113+ | 3.22 грн |
| 250+ | 2.44 грн |
| 655+ | 1.3 грн |
| 1799+ | 1.23 грн |
| BAS16TT1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT416; Ufmax: 1.25V; 360mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 2pF
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Case: SOT416
Max. forward voltage: 1.25V
Leakage current: 50µA
Power dissipation: 0.36W
Reverse recovery time: 6ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT416; Ufmax: 1.25V; 360mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 2pF
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Case: SOT416
Max. forward voltage: 1.25V
Leakage current: 50µA
Power dissipation: 0.36W
Reverse recovery time: 6ns
товар відсутній
| MBR0520LT3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 0.5A; SOD123; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.33V
Case: SOD123
Kind of package: reel; tape
Max. forward impulse current: 5.5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 0.5A; SOD123; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.33V
Case: SOD123
Kind of package: reel; tape
Max. forward impulse current: 5.5A
товар відсутній
| ALS-GEVB |
|
Виробник: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board; Comp: NOA1305
Type of accessories for development kits: expansion board
Kit contents: prototype board
Components: NOA1305
Interface: I2C
Kind of connector: Pmod connector
development kits accessories features: light sensor
Category: Development kits - others
Description: Expansion board; prototype board; Comp: NOA1305
Type of accessories for development kits: expansion board
Kit contents: prototype board
Components: NOA1305
Interface: I2C
Kind of connector: Pmod connector
development kits accessories features: light sensor
товар відсутній
| MJ21194G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Current gain: 8...75
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Current gain: 8...75
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
на замовлення 86 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 673.91 грн |
| 2+ | 432.67 грн |
| 6+ | 409.44 грн |
| 1N5931BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 18V; reel,tape; CASE59; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 3W; 18V; reel,tape; CASE59; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 2185 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 12.82 грн |
| 40+ | 9.44 грн |
| 100+ | 8.28 грн |
| 120+ | 7.19 грн |
| 325+ | 6.82 грн |
| BAT54CWT1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 7.6pF
Case: SOT323
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 7.6pF
Case: SOT323
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
на замовлення 1720 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 9.38 грн |
| 64+ | 5.74 грн |
| 104+ | 3.51 грн |
| 450+ | 1.89 грн |
| 1236+ | 1.79 грн |
| SBAT54CWT1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Case: SOT323
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Case: SOT323
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
товар відсутній
| BAV99WT1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 4ns; SOT323; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT323
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 4ns; SOT323; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT323
Kind of package: reel; tape
на замовлення 1471 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 10.16 грн |
| 53+ | 6.9 грн |
| 77+ | 4.73 грн |
| 118+ | 3.1 грн |
| 250+ | 2.65 грн |
| 500+ | 2.37 грн |
| 600+ | 1.42 грн |
| SBAV99WT1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 6ns; SC70; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SC70
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 6ns; SC70; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SC70
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
на замовлення 75 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 75+ | 6.04 грн |
| NCP3420DR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO8; 4.6÷13.2VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 4.6...13.2V DC
Mounting: SMD
Operating temperature: 0...85°C
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO8; 4.6÷13.2VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 4.6...13.2V DC
Mounting: SMD
Operating temperature: 0...85°C
товар відсутній
| NCP51530BDR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO8; -3÷3.5A; 700V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Output current: -3...3.5A
Supply voltage: 10...17V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Voltage class: 700V
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO8; -3÷3.5A; 700V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Output current: -3...3.5A
Supply voltage: 10...17V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Voltage class: 700V
товар відсутній
| NCP51530BMNTWG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN10; -3÷3.5A; 700V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN10
Output current: -3...3.5A
Supply voltage: 10...17V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Voltage class: 700V
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN10; -3÷3.5A; 700V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN10
Output current: -3...3.5A
Supply voltage: 10...17V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Voltage class: 700V
товар відсутній
| NCP51561BADWR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO16; -9÷4.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO16
Output current: -9...4.5A
Number of channels: 2
Supply voltage: 3...5V DC; 9.5...30V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 19ns
Pulse fall time: 19ns
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO16; -9÷4.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO16
Output current: -9...4.5A
Number of channels: 2
Supply voltage: 3...5V DC; 9.5...30V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 19ns
Pulse fall time: 19ns
товар відсутній
| NCP51561BBDWR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO16; -9÷4.5A; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: -9...4.5A
Type of integrated circuit: driver
Pulse fall time: 19ns
Case: SO16
Kind of integrated circuit: gate driver; high-side; low-side
Number of channels: 2
Impulse rise time: 19ns
Supply voltage: 3...5V DC; 9.5...30V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO16; -9÷4.5A; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: -9...4.5A
Type of integrated circuit: driver
Pulse fall time: 19ns
Case: SO16
Kind of integrated circuit: gate driver; high-side; low-side
Number of channels: 2
Impulse rise time: 19ns
Supply voltage: 3...5V DC; 9.5...30V DC
товар відсутній
| NCP51705MNTXG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SiC; QFN24; -6÷6A
Supply voltage: -8...0V DC; 10...22V DC
Mounting: SMD
Operating temperature: -40...125°C
Output current: -6...6A
Type of integrated circuit: driver
Impulse rise time: 15ns
Pulse fall time: 15ns
Technology: SiC
Kind of integrated circuit: gate driver; high-side; low-side
Case: QFN24
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SiC; QFN24; -6÷6A
Supply voltage: -8...0V DC; 10...22V DC
Mounting: SMD
Operating temperature: -40...125°C
Output current: -6...6A
Type of integrated circuit: driver
Impulse rise time: 15ns
Pulse fall time: 15ns
Technology: SiC
Kind of integrated circuit: gate driver; high-side; low-side
Case: QFN24
товар відсутній
| NCP51810AMNTWG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; GaN; QFN15; -2÷1A
Technology: GaN
Case: QFN15
Mounting: SMD
Output current: -2...1A
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; high-side; low-side
Type of integrated circuit: driver
Supply voltage: 9...17V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; GaN; QFN15; -2÷1A
Technology: GaN
Case: QFN15
Mounting: SMD
Output current: -2...1A
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; high-side; low-side
Type of integrated circuit: driver
Supply voltage: 9...17V DC
товар відсутній
| NCP51820AMNTWG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; GaN; QFN15; -2÷1A
Technology: GaN
Case: QFN15
Mounting: SMD
Output current: -2...1A
Operating temperature: -40...125°C
Voltage class: 650V
Kind of integrated circuit: gate driver; high-side; low-side
Type of integrated circuit: driver
Supply voltage: 9...17V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; GaN; QFN15; -2÷1A
Technology: GaN
Case: QFN15
Mounting: SMD
Output current: -2...1A
Operating temperature: -40...125°C
Voltage class: 650V
Kind of integrated circuit: gate driver; high-side; low-side
Type of integrated circuit: driver
Supply voltage: 9...17V DC
товар відсутній
| NCP81075DR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO8; -4÷4A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 8.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 8ns
Pulse fall time: 7ns
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO8; -4÷4A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 8.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 8ns
Pulse fall time: 7ns
товар відсутній
| NCP81075MTTXG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; WDFN10; -4÷4A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: WDFN10
Output current: -4...4A
Number of channels: 2
Supply voltage: 8.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 8ns
Pulse fall time: 7ns
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; WDFN10; -4÷4A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: WDFN10
Output current: -4...4A
Number of channels: 2
Supply voltage: 8.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 8ns
Pulse fall time: 7ns
товар відсутній
| NRVBSS24NT3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; SMB; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 40V
Application: automotive industry
Max. load current: 3A
Load current: 2A
Max. forward voltage: 0.5V
Max. forward impulse current: 75A
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; SMB; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 40V
Application: automotive industry
Max. load current: 3A
Load current: 2A
Max. forward voltage: 0.5V
Max. forward impulse current: 75A
Type of diode: Schottky rectifying
товар відсутній
| CAT24C32C5CTR |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; WLCSP5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: WLCSP5
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; WLCSP5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: WLCSP5
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
товар відсутній
| CAT24C32HU4I-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 1MHz
Kind of interface: serial
Memory: 32kb EEPROM
Operating voltage: 1.7...5.5V
Type of integrated circuit: EEPROM memory
Interface: I2C
Kind of memory: EEPROM
Memory organisation: 4kx8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 1MHz
Kind of interface: serial
Memory: 32kb EEPROM
Operating voltage: 1.7...5.5V
Type of integrated circuit: EEPROM memory
Interface: I2C
Kind of memory: EEPROM
Memory organisation: 4kx8bit
товар відсутній
| MC100EPT23DG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Number of channels: 2
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 4
Number of outputs: 2
Manufacturer series: 100EPT
Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Number of channels: 2
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 4
Number of outputs: 2
Manufacturer series: 100EPT
товар відсутній
| MC100EPT23DTG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Number of channels: 2
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 4
Number of outputs: 2
Manufacturer series: 100EPT
Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Number of channels: 2
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 4
Number of outputs: 2
Manufacturer series: 100EPT
товар відсутній
| MC100EPT23DTR2G |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; SMD; TSSOP8; -40÷85°C; reel,tape; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Number of channels: 2
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 4
Number of outputs: 2
Manufacturer series: 100EPT
Category: Level translators
Description: IC: digital; Ch: 2; SMD; TSSOP8; -40÷85°C; reel,tape; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Number of channels: 2
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 4
Number of outputs: 2
Manufacturer series: 100EPT
товар відсутній
| MC100EPT23MNR4G |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; SMD; VDFN8; -40÷85°C; reel,tape; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Number of channels: 2
Mounting: SMD
Case: VDFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 4
Number of outputs: 2
Manufacturer series: 100EPT
Category: Level translators
Description: IC: digital; Ch: 2; SMD; VDFN8; -40÷85°C; reel,tape; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Number of channels: 2
Mounting: SMD
Case: VDFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 4
Number of outputs: 2
Manufacturer series: 100EPT
товар відсутній
| FDS4935A |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 1.6W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 1.6W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2455 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 65.67 грн |
| 10+ | 48.57 грн |
| 24+ | 36.3 грн |
| 64+ | 34.12 грн |
| 500+ | 33.1 грн |
| FDS4935BZ |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -6.9A; 1.6W; SO8
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.9A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -6.9A; 1.6W; SO8
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.9A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 1638 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 78.96 грн |
| 9+ | 43.99 грн |
| 25+ | 33.9 грн |
| 69+ | 32.01 грн |
| KSP42BU |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
товар відсутній
| KSP42TA |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
товар відсутній
| MJE5852G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 400V; 8A; 80W; TO220AB
Case: TO220AB
Mounting: THT
Collector-emitter voltage: 400V
Collector current: 8A
Type of transistor: PNP
Power dissipation: 80W
Polarisation: bipolar
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 400V; 8A; 80W; TO220AB
Case: TO220AB
Mounting: THT
Collector-emitter voltage: 400V
Collector current: 8A
Type of transistor: PNP
Power dissipation: 80W
Polarisation: bipolar
Kind of package: tube
товар відсутній
| 2SC5226A-4-TL-E |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.15W; SC70
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 10V
Collector current: 70mA
Power dissipation: 0.15W
Case: SC70
Current gain: 90...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 5...7GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.15W; SC70
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 10V
Collector current: 70mA
Power dissipation: 0.15W
Case: SC70
Current gain: 90...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 5...7GHz
товар відсутній
| 2SC5226A-5-TL-E |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.15W; SC70
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 10V
Collector current: 70mA
Power dissipation: 0.15W
Case: SC70
Current gain: 135...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 5...7GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.15W; SC70
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 10V
Collector current: 70mA
Power dissipation: 0.15W
Case: SC70
Current gain: 135...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 5...7GHz
товар відсутній
| NCP1034DR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 10÷18V; SO16; buck
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 2A
Frequency: 170...430kHz
Mounting: SMD
Case: SO16
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 10...18V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 10÷18V; SO16; buck
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 2A
Frequency: 170...430kHz
Mounting: SMD
Case: SO16
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 10...18V
товар відсутній
| FDG6301N-F085 |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 25V
Drain current: 0.22A
On-state resistance: 7Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.3W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 25V
Drain current: 0.22A
On-state resistance: 7Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.3W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
товар відсутній
| FDMC86259P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; Idm: -20A; 62W; Power33
Kind of package: reel; tape
Drain-source voltage: -150V
Drain current: -13A
On-state resistance: 178mΩ
Type of transistor: P-MOSFET
Power dissipation: 62W
Polarisation: unipolar
Gate charge: 32nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -20A
Mounting: SMD
Case: Power33
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; Idm: -20A; 62W; Power33
Kind of package: reel; tape
Drain-source voltage: -150V
Drain current: -13A
On-state resistance: 178mΩ
Type of transistor: P-MOSFET
Power dissipation: 62W
Polarisation: unipolar
Gate charge: 32nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -20A
Mounting: SMD
Case: Power33
товар відсутній
| MBR130LSFT1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Max. load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.3V
Case: SOD123F
Kind of package: reel; tape
Max. forward impulse current: 40A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Max. load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.3V
Case: SOD123F
Kind of package: reel; tape
Max. forward impulse current: 40A
на замовлення 2290 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.17 грн |
| 35+ | 10.6 грн |
| 100+ | 9.36 грн |
| 110+ | 8.06 грн |
| 290+ | 7.62 грн |
| MBR130T1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Case: SOD123
Kind of package: reel; tape
Max. forward impulse current: 5.5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Case: SOD123
Kind of package: reel; tape
Max. forward impulse current: 5.5A
на замовлення 1065 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 28.14 грн |
| 22+ | 17.21 грн |
| 35+ | 10.45 грн |
| 100+ | 7.26 грн |
| 196+ | 4.36 грн |
| 538+ | 4.14 грн |
| MBR130T3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Case: SOD123
Kind of package: reel; tape
Max. forward impulse current: 5.5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Case: SOD123
Kind of package: reel; tape
Max. forward impulse current: 5.5A
товар відсутній
| 74VHC541M |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: SO20-W
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: SO20-W
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Quiescent current: 40µA
товар відсутній
| 74VHC541MTC |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
на замовлення 1700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 38.31 грн |
| 12+ | 32.45 грн |
| 25+ | 30.05 грн |
| 36+ | 24.1 грн |
| 97+ | 22.79 грн |
| 1000+ | 22.36 грн |
| 74VHC541MTCX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
товар відсутній
| 74VHC541MX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: SO20-W
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: SO20-W
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
товар відсутній
| 74VHCT14AMTC |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Family: VHCT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Family: VHCT
товар відсутній
| 74VHCT14AMTCX |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: VHCT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: VHCT
товар відсутній