| Фото | Назва | Виробник | Інформація |
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FDMS86101DC | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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FDMS86200DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 40A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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FDMS86300DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 110A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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NB3L553MNR4G | ONSEMI |
Category: Level translators Description: IC: digital; fanout buffer; Ch: 1; 2.375÷5.25VDC; SMD; DFN8 Operating temperature: -40...85°C Kind of package: reel; tape Case: DFN8 Kind of integrated circuit: fanout buffer Number of channels: 1 Mounting: SMD Supply voltage: 2.375...5.25V DC Type of integrated circuit: digital |
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| NRVHP420MFDT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 40ns; DFN8; Ufmax: 1.1V; Ifsm: 40A Mounting: SMD Max. forward impulse current: 40A Case: DFN8 Kind of package: reel; tape Application: automotive industry Type of diode: rectifying Max. off-state voltage: 200V Max. load current: 4A Max. forward voltage: 1.1V Load current: 2A Semiconductor structure: double independent Reverse recovery time: 40ns |
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| NRVHP620MFDT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; 25ns; DFN8; Ufmax: 1.09V; Ifsm: 80A Mounting: SMD Max. forward impulse current: 80A Case: DFN8 Kind of package: reel; tape Application: automotive industry Type of diode: rectifying Max. off-state voltage: 200V Max. load current: 6A Max. forward voltage: 1.09V Load current: 3A Semiconductor structure: double independent Reverse recovery time: 25ns |
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| NRVHP620MFDT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; 25ns; DFN8; Ufmax: 1.09V; Ifsm: 80A Mounting: SMD Max. forward impulse current: 80A Case: DFN8 Kind of package: reel; tape Application: automotive industry Type of diode: rectifying Max. off-state voltage: 200V Max. load current: 6A Max. forward voltage: 1.09V Load current: 3A Semiconductor structure: double independent Reverse recovery time: 25ns |
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| NRVHP820MFDT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A Mounting: SMD Max. forward impulse current: 80A Case: DFN8 Kind of package: reel; tape Application: automotive industry Type of diode: rectifying Max. off-state voltage: 200V Max. load current: 8A Max. forward voltage: 1.05V Load current: 4A Semiconductor structure: double independent Reverse recovery time: 50ns |
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| NRVHP820MFDT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A Mounting: SMD Max. forward impulse current: 80A Case: DFN8 Kind of package: reel; tape Application: automotive industry Type of diode: rectifying Max. off-state voltage: 200V Max. load current: 8A Max. forward voltage: 1.05V Load current: 4A Semiconductor structure: double independent Reverse recovery time: 50ns |
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NVMFD5C462NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 52A; 25W; DFN8; 5x6mm Mounting: SMD Case: DFN8 Kind of package: reel; tape Power dissipation: 25W Dimensions: 5x6mm Gate-source voltage: ±20V Type of transistor: N-MOSFET Drain-source voltage: 40V Drain current: 52A On-state resistance: 4.7mΩ Polarisation: unipolar Kind of channel: enhanced |
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MC100LVELT23MNRG | ONSEMI |
Category: Level translators Description: IC: digital; non-inverting,logic level voltage translator; Ch: 2 Type of integrated circuit: digital Mounting: SMD Number of channels: 2 Case: DFN8 Operating temperature: -40...85°C Kind of package: reel; tape Kind of integrated circuit: logic level voltage translator; non-inverting Manufacturer series: 100LVELT Number of inputs: 4 Number of outputs: 2 |
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| NCP5901BMNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; buck; high-side,low-side,gate driver; DFN8 Type of integrated circuit: driver Topology: buck Kind of integrated circuit: gate driver; high-side; low-side Case: DFN8 Supply voltage: 4.5...13.2V DC Mounting: SMD Operating temperature: -10...125°C |
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| NCP5901MNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; buck; high-side,low-side,gate driver; DFN8 Type of integrated circuit: driver Topology: buck Kind of integrated circuit: gate driver; high-side; low-side Case: DFN8 Supply voltage: 4.5...13.2V DC Mounting: SMD Operating temperature: -10...125°C |
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| NCP81145MNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; buck; high-side,low-side,gate driver; DFN8 Type of integrated circuit: driver Topology: buck Kind of integrated circuit: gate driver; high-side; low-side Case: DFN8 Supply voltage: 4.5...5.5V DC Mounting: SMD Operating temperature: -40...125°C |
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| NCP81146MNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; buck; high-side,low-side,gate driver; DFN8 Type of integrated circuit: driver Topology: buck Kind of integrated circuit: gate driver; high-side; low-side Case: DFN8 Supply voltage: 4.5...13.2V DC Mounting: SMD Operating temperature: -40...125°C |
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| NCP81258MNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; buck; high-side,low-side,gate driver; DFN8 Type of integrated circuit: driver Mounting: SMD Case: DFN8 Operating temperature: -10...125°C Kind of integrated circuit: gate driver; high-side; low-side Supply voltage: 4.5...13.2V DC Topology: buck |
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NCV51190MNTAG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: 0.675÷1.35V Type of integrated circuit: PMIC Kind of integrated circuit: DDR memory termination regulator Output voltage: 0.675...1.35V Output current: 1.5A Mounting: SMD Case: DFN8 Number of channels: 1 Operating temperature: -40...125°C Application: automotive industry; for DDR memories Operating voltage: 1.35...2.5/2.2...5.5V |
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| FDMS7650DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 200A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 200A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 1.55mΩ Mounting: SMD Gate charge: 206nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMS8320LDC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 192A; Idm: 300A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 192A Pulsed drain current: 300A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 170nC Kind of package: reel; tape Kind of channel: enhanced |
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FDWS9509L-F085 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -40V Drain current: -65A Power dissipation: 107W Case: DFN8 Gate-source voltage: ±16V On-state resistance: 13mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| NCP45520IMNTWG-L | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 10.5A; Ch: 1; N-Channel; SMD; DFN8 Type of integrated circuit: power switch Mounting: SMD Number of channels: 1 Case: DFN8 Kind of package: reel; tape Kind of integrated circuit: high-side Output current: 10.5A Control voltage: 0.5...13.5V DC Supply voltage: 3...5.5V DC On-state resistance: 22.5mΩ Active logical level: low Kind of output: N-Channel |
на замовлення 2920 шт: термін постачання 21-30 дні (днів) |
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| NCP45522IMNTWG-H | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8 Type of integrated circuit: power switch Case: DFN8 Supply voltage: 3...5.5V DC On-state resistance: 31.7mΩ Output current: 6A Number of channels: 1 Kind of output: N-Channel Active logical level: high Kind of package: reel; tape Control voltage: 0.5...13.5V DC Kind of integrated circuit: high-side Mounting: SMD |
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| NCP45523IMNTWG-H | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8 Type of integrated circuit: power switch Mounting: SMD Number of channels: 1 Case: DFN8 Kind of package: reel; tape Kind of integrated circuit: high-side Output current: 6A Control voltage: 0.5...13.5V DC Supply voltage: 3...5.5V DC On-state resistance: 31.7mΩ Active logical level: high Kind of output: N-Channel |
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| NCP45524IMNTWG-H | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8 Kind of package: reel; tape On-state resistance: 31.7mΩ Output current: 6A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Active logical level: high Control voltage: 0.5...13.5V DC Kind of integrated circuit: high-side Mounting: SMD Case: DFN8 Supply voltage: 3...5.5V DC |
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| NCP45524IMNTWG-L | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8 Kind of package: reel; tape On-state resistance: 31.7mΩ Output current: 6A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Active logical level: low Control voltage: 0.5...13.5V DC Kind of integrated circuit: high-side Mounting: SMD Case: DFN8 Supply voltage: 3...5.5V DC |
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| NCP45610IMNTWG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 8A; Ch: 1; N-Channel; SMD; DFN8 Case: DFN8 Kind of package: reel; tape Active logical level: high Control voltage: 1...13.5V DC Output current: 8A Type of integrated circuit: power switch Kind of output: N-Channel Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 21mΩ Mounting: SMD Supply voltage: 3...5.5V DC |
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| NCP81080MNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-side,gate driver; DFN8 Case: DFN8 Topology: MOSFET half-bridge Operating temperature: -40...140°C Mounting: SMD Supply voltage: 5.5...20V DC Output current: -800...500mA Type of integrated circuit: driver Impulse rise time: 19ns Pulse fall time: 17ns Kind of integrated circuit: gate driver; high-side |
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MC100EPT21MNR4G | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; DFN8; -40÷85°C; reel,tape; IN: 2 Operating temperature: -40...85°C Manufacturer series: 100EPT Kind of package: reel; tape Type of integrated circuit: digital Number of channels: 1 Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator Mounting: SMD Case: DFN8 Number of inputs: 2 Number of outputs: 1 Supply voltage: 3...3.6V DC |
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FDL100N50F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 2500W; TO264 Drain-source voltage: 500V Drain current: 100A Case: TO264 Polarisation: unipolar On-state resistance: 55mΩ Power dissipation: 2.5kW Technology: UniFET™ Kind of channel: enhanced Gate charge: 238nC Gate-source voltage: ±30V Kind of package: tube Type of transistor: N-MOSFET Mounting: THT |
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| NV25256DTHFT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Clock frequency: 10MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...150°C Access time: 40ns Kind of package: reel; tape Operating voltage: 2.5...5.5V |
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| NV25256DWHFT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Clock frequency: 10MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...150°C Access time: 40ns Kind of package: reel; tape Operating voltage: 2.5...5.5V |
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| NV25256MUW3VTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Clock frequency: 10MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 40ns Kind of package: reel; tape Operating voltage: 1.8...5.5V |
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| CAT25256HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz Case: uDFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Clock frequency: 20MHz Kind of interface: serial Memory: 256kb EEPROM Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 32kx8bit Access time: 40ns |
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| CAT25256VI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Clock frequency: 20MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 40ns Kind of package: reel; tape Operating voltage: 1.8...5.5V |
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| CAT25256XI-T2 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Clock frequency: 20MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 40ns Kind of package: reel; tape Operating voltage: 1.8...5.5V |
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| CAT25256YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Clock frequency: 20MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C Access time: 40ns Kind of package: reel; tape Operating voltage: 1.8...5.5V |
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| CAV25256VE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Clock frequency: 10MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 40ns Kind of package: reel; tape Operating voltage: 2.5...5.5V |
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| CAV25256YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Clock frequency: 10MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 40ns Kind of package: reel; tape Operating voltage: 2.5...5.5V |
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FQB30N06LTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 22.6A; Idm: 128A; 79W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 22.6A Pulsed drain current: 128A Power dissipation: 79W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
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FQD30N06TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14.3A; Idm: 90.8A; 44W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14.3A Pulsed drain current: 90.8A Power dissipation: 44W Case: DPAK Gate-source voltage: ±25V On-state resistance: 45mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDP030N06 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 138A; 205W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 138A Power dissipation: 205W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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| FDMS030N06B | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 400A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhanced |
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MMSZ5226BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 3719 шт: термін постачання 21-30 дні (днів) |
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MMSZ5251BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 22V; SMD; reel,tape; SOD123; single diode Case: SOD123 Semiconductor structure: single diode Zener voltage: 22V Power dissipation: 0.5W Kind of package: reel; tape Type of diode: Zener Mounting: SMD Tolerance: ±5% |
на замовлення 2997 шт: термін постачання 21-30 дні (днів) |
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FDMS86163P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 104W; PQFN8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -100V Drain current: -50A Power dissipation: 104W Case: PQFN8 Gate-source voltage: ±25V On-state resistance: 36mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhanced |
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NCP1117ST50T3G | ONSEMI |
 Category: LDO unregulated voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.2V Output voltage: 5V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 6.5...12V Manufacturer series: NCP1117 |
на замовлення 1883 шт: термін постачання 21-30 дні (днів) |
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MMSD4448 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A Mounting: SMD Power dissipation: 0.4W Type of diode: switching Case: SOD123 Capacitance: 2pF Max. off-state voltage: 100V Max. forward voltage: 1V Load current: 0.2A Semiconductor structure: single diode Reverse recovery time: 4ns Max. forward impulse current: 2A Leakage current: 5µA |
на замовлення 3970 шт: термін постачання 21-30 дні (днів) |
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MMSZ43T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 43V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode |
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MMSZ4678T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 1.8V; SMD; reel,tape; SOD123; single diode Mounting: SMD Power dissipation: 0.5W Kind of package: reel; tape Type of diode: Zener Case: SOD123 Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 1.8V |
на замовлення 6154 шт: термін постачання 21-30 дні (днів) |
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MMSZ4679T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 2V; SMD; reel,tape; SOD123; single diode; 5uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 5µA |
на замовлення 1875 шт: термін постачання 21-30 дні (днів) |
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MMSZ4680T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 2.2V; SMD; reel,tape; SOD123; single diode; 4uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 4µA |
на замовлення 2825 шт: термін постачання 21-30 дні (днів) |
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MMSZ4681T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; SOD123; single diode; 2uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.4V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 2µA |
на замовлення 5255 шт: термін постачання 21-30 дні (днів) |
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MMSZ4682T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123; single diode; 1uA Kind of package: reel; tape Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 2.7V Leakage current: 1µA Power dissipation: 0.5W Type of diode: Zener Mounting: SMD Case: SOD123 |
товар відсутній |
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MMSZ4683T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3V; SMD; reel,tape; SOD123; single diode; 0.8uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 0.8µA |
на замовлення 2150 шт: термін постачання 21-30 дні (днів) |
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MMSZ4684T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 7.5µA |
на замовлення 7605 шт: термін постачання 21-30 дні (днів) |
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MMSZ4686T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3.9V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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MMSZ4687T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 4.3V; SMD; reel,tape; SOD123; single diode; 4uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 4µA |
на замовлення 4300 шт: термін постачання 21-30 дні (днів) |
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MMSZ4689T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode; 10uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 10µA |
на замовлення 8245 шт: термін постачання 21-30 дні (днів) |
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MMSZ4690T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123; single diode; 10uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 10µA |
на замовлення 115 шт: термін постачання 21-30 дні (днів) |
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MMSZ4691T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; SOD123; single diode; 10uA Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 10µA Case: SOD123 Zener voltage: 6.2V Type of diode: Zener Tolerance: ±5% Power dissipation: 0.5W |
товар відсутній |
| FDMS86101DC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS86200DC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 40A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 40A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS86300DC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 110A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 110A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NB3L553MNR4G |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; 2.375÷5.25VDC; SMD; DFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: DFN8
Kind of integrated circuit: fanout buffer
Number of channels: 1
Mounting: SMD
Supply voltage: 2.375...5.25V DC
Type of integrated circuit: digital
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; 2.375÷5.25VDC; SMD; DFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: DFN8
Kind of integrated circuit: fanout buffer
Number of channels: 1
Mounting: SMD
Supply voltage: 2.375...5.25V DC
Type of integrated circuit: digital
товар відсутній
| NRVHP420MFDT1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 40ns; DFN8; Ufmax: 1.1V; Ifsm: 40A
Mounting: SMD
Max. forward impulse current: 40A
Case: DFN8
Kind of package: reel; tape
Application: automotive industry
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 4A
Max. forward voltage: 1.1V
Load current: 2A
Semiconductor structure: double independent
Reverse recovery time: 40ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 40ns; DFN8; Ufmax: 1.1V; Ifsm: 40A
Mounting: SMD
Max. forward impulse current: 40A
Case: DFN8
Kind of package: reel; tape
Application: automotive industry
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 4A
Max. forward voltage: 1.1V
Load current: 2A
Semiconductor structure: double independent
Reverse recovery time: 40ns
товар відсутній
| NRVHP620MFDT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; DFN8; Ufmax: 1.09V; Ifsm: 80A
Mounting: SMD
Max. forward impulse current: 80A
Case: DFN8
Kind of package: reel; tape
Application: automotive industry
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 6A
Max. forward voltage: 1.09V
Load current: 3A
Semiconductor structure: double independent
Reverse recovery time: 25ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; DFN8; Ufmax: 1.09V; Ifsm: 80A
Mounting: SMD
Max. forward impulse current: 80A
Case: DFN8
Kind of package: reel; tape
Application: automotive industry
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 6A
Max. forward voltage: 1.09V
Load current: 3A
Semiconductor structure: double independent
Reverse recovery time: 25ns
товар відсутній
| NRVHP620MFDT3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; DFN8; Ufmax: 1.09V; Ifsm: 80A
Mounting: SMD
Max. forward impulse current: 80A
Case: DFN8
Kind of package: reel; tape
Application: automotive industry
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 6A
Max. forward voltage: 1.09V
Load current: 3A
Semiconductor structure: double independent
Reverse recovery time: 25ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; DFN8; Ufmax: 1.09V; Ifsm: 80A
Mounting: SMD
Max. forward impulse current: 80A
Case: DFN8
Kind of package: reel; tape
Application: automotive industry
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 6A
Max. forward voltage: 1.09V
Load current: 3A
Semiconductor structure: double independent
Reverse recovery time: 25ns
товар відсутній
| NRVHP820MFDT1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Mounting: SMD
Max. forward impulse current: 80A
Case: DFN8
Kind of package: reel; tape
Application: automotive industry
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 8A
Max. forward voltage: 1.05V
Load current: 4A
Semiconductor structure: double independent
Reverse recovery time: 50ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Mounting: SMD
Max. forward impulse current: 80A
Case: DFN8
Kind of package: reel; tape
Application: automotive industry
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 8A
Max. forward voltage: 1.05V
Load current: 4A
Semiconductor structure: double independent
Reverse recovery time: 50ns
товар відсутній
| NRVHP820MFDT3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Mounting: SMD
Max. forward impulse current: 80A
Case: DFN8
Kind of package: reel; tape
Application: automotive industry
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 8A
Max. forward voltage: 1.05V
Load current: 4A
Semiconductor structure: double independent
Reverse recovery time: 50ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Mounting: SMD
Max. forward impulse current: 80A
Case: DFN8
Kind of package: reel; tape
Application: automotive industry
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 8A
Max. forward voltage: 1.05V
Load current: 4A
Semiconductor structure: double independent
Reverse recovery time: 50ns
товар відсутній
| NVMFD5C462NLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 52A; 25W; DFN8; 5x6mm
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Power dissipation: 25W
Dimensions: 5x6mm
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 52A
On-state resistance: 4.7mΩ
Polarisation: unipolar
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 52A; 25W; DFN8; 5x6mm
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Power dissipation: 25W
Dimensions: 5x6mm
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 52A
On-state resistance: 4.7mΩ
Polarisation: unipolar
Kind of channel: enhanced
товар відсутній
| MC100LVELT23MNRG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 2
Case: DFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of integrated circuit: logic level voltage translator; non-inverting
Manufacturer series: 100LVELT
Number of inputs: 4
Number of outputs: 2
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 2
Case: DFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of integrated circuit: logic level voltage translator; non-inverting
Manufacturer series: 100LVELT
Number of inputs: 4
Number of outputs: 2
товар відсутній
| NCP5901BMNTBG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
товар відсутній
| NCP5901MNTBG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
товар відсутній
| NCP81145MNTBG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...125°C
товар відсутній
| NCP81146MNTBG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -40...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -40...125°C
товар відсутній
| NCP81258MNTBG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Mounting: SMD
Case: DFN8
Operating temperature: -10...125°C
Kind of integrated circuit: gate driver; high-side; low-side
Supply voltage: 4.5...13.2V DC
Topology: buck
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Mounting: SMD
Case: DFN8
Operating temperature: -10...125°C
Kind of integrated circuit: gate driver; high-side; low-side
Supply voltage: 4.5...13.2V DC
Topology: buck
товар відсутній
| NCV51190MNTAG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.675÷1.35V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: 0.675...1.35V
Output current: 1.5A
Mounting: SMD
Case: DFN8
Number of channels: 1
Operating temperature: -40...125°C
Application: automotive industry; for DDR memories
Operating voltage: 1.35...2.5/2.2...5.5V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.675÷1.35V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: 0.675...1.35V
Output current: 1.5A
Mounting: SMD
Case: DFN8
Number of channels: 1
Operating temperature: -40...125°C
Application: automotive industry; for DDR memories
Operating voltage: 1.35...2.5/2.2...5.5V
товар відсутній
| FDMS7650DC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 200A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 200A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 206nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 200A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 200A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 206nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS8320LDC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 192A; Idm: 300A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 192A
Pulsed drain current: 300A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 170nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 192A; Idm: 300A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 192A
Pulsed drain current: 300A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 170nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDWS9509L-F085 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -65A
Power dissipation: 107W
Case: DFN8
Gate-source voltage: ±16V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -65A
Power dissipation: 107W
Case: DFN8
Gate-source voltage: ±16V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| NCP45520IMNTWG-L |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10.5A; Ch: 1; N-Channel; SMD; DFN8
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 1
Case: DFN8
Kind of package: reel; tape
Kind of integrated circuit: high-side
Output current: 10.5A
Control voltage: 0.5...13.5V DC
Supply voltage: 3...5.5V DC
On-state resistance: 22.5mΩ
Active logical level: low
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10.5A; Ch: 1; N-Channel; SMD; DFN8
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 1
Case: DFN8
Kind of package: reel; tape
Kind of integrated circuit: high-side
Output current: 10.5A
Control voltage: 0.5...13.5V DC
Supply voltage: 3...5.5V DC
On-state resistance: 22.5mΩ
Active logical level: low
Kind of output: N-Channel
на замовлення 2920 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 79.85 грн |
| 14+ | 58.01 грн |
| 38+ | 54.85 грн |
| NCP45522IMNTWG-H |
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Type of integrated circuit: power switch
Case: DFN8
Supply voltage: 3...5.5V DC
On-state resistance: 31.7mΩ
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Kind of package: reel; tape
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Type of integrated circuit: power switch
Case: DFN8
Supply voltage: 3...5.5V DC
On-state resistance: 31.7mΩ
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Kind of package: reel; tape
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
товар відсутній
| NCP45523IMNTWG-H |
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 1
Case: DFN8
Kind of package: reel; tape
Kind of integrated circuit: high-side
Output current: 6A
Control voltage: 0.5...13.5V DC
Supply voltage: 3...5.5V DC
On-state resistance: 31.7mΩ
Active logical level: high
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 1
Case: DFN8
Kind of package: reel; tape
Kind of integrated circuit: high-side
Output current: 6A
Control voltage: 0.5...13.5V DC
Supply voltage: 3...5.5V DC
On-state resistance: 31.7mΩ
Active logical level: high
Kind of output: N-Channel
товар відсутній
| NCP45524IMNTWG-H |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Kind of package: reel; tape
On-state resistance: 31.7mΩ
Output current: 6A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: DFN8
Supply voltage: 3...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Kind of package: reel; tape
On-state resistance: 31.7mΩ
Output current: 6A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: DFN8
Supply voltage: 3...5.5V DC
товар відсутній
| NCP45524IMNTWG-L |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Kind of package: reel; tape
On-state resistance: 31.7mΩ
Output current: 6A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: low
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: DFN8
Supply voltage: 3...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Kind of package: reel; tape
On-state resistance: 31.7mΩ
Output current: 6A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: low
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: DFN8
Supply voltage: 3...5.5V DC
товар відсутній
| NCP45610IMNTWG |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 8A; Ch: 1; N-Channel; SMD; DFN8
Case: DFN8
Kind of package: reel; tape
Active logical level: high
Control voltage: 1...13.5V DC
Output current: 8A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 21mΩ
Mounting: SMD
Supply voltage: 3...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 8A; Ch: 1; N-Channel; SMD; DFN8
Case: DFN8
Kind of package: reel; tape
Active logical level: high
Control voltage: 1...13.5V DC
Output current: 8A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 21mΩ
Mounting: SMD
Supply voltage: 3...5.5V DC
товар відсутній
| NCP81080MNTBG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; DFN8
Case: DFN8
Topology: MOSFET half-bridge
Operating temperature: -40...140°C
Mounting: SMD
Supply voltage: 5.5...20V DC
Output current: -800...500mA
Type of integrated circuit: driver
Impulse rise time: 19ns
Pulse fall time: 17ns
Kind of integrated circuit: gate driver; high-side
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; DFN8
Case: DFN8
Topology: MOSFET half-bridge
Operating temperature: -40...140°C
Mounting: SMD
Supply voltage: 5.5...20V DC
Output current: -800...500mA
Type of integrated circuit: driver
Impulse rise time: 19ns
Pulse fall time: 17ns
Kind of integrated circuit: gate driver; high-side
товар відсутній
| MC100EPT21MNR4G |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; DFN8; -40÷85°C; reel,tape; IN: 2
Operating temperature: -40...85°C
Manufacturer series: 100EPT
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Mounting: SMD
Case: DFN8
Number of inputs: 2
Number of outputs: 1
Supply voltage: 3...3.6V DC
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; DFN8; -40÷85°C; reel,tape; IN: 2
Operating temperature: -40...85°C
Manufacturer series: 100EPT
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Mounting: SMD
Case: DFN8
Number of inputs: 2
Number of outputs: 1
Supply voltage: 3...3.6V DC
товар відсутній
| FDL100N50F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 2500W; TO264
Drain-source voltage: 500V
Drain current: 100A
Case: TO264
Polarisation: unipolar
On-state resistance: 55mΩ
Power dissipation: 2.5kW
Technology: UniFET™
Kind of channel: enhanced
Gate charge: 238nC
Gate-source voltage: ±30V
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 2500W; TO264
Drain-source voltage: 500V
Drain current: 100A
Case: TO264
Polarisation: unipolar
On-state resistance: 55mΩ
Power dissipation: 2.5kW
Technology: UniFET™
Kind of channel: enhanced
Gate charge: 238nC
Gate-source voltage: ±30V
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
товар відсутній
| NV25256DTHFT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
товар відсутній
| NV25256DWHFT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
товар відсутній
| NV25256MUW3VTBG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
товар відсутній
| CAT25256HU4I-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 20MHz
Kind of interface: serial
Memory: 256kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 40ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 20MHz
Kind of interface: serial
Memory: 256kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 40ns
товар відсутній
| CAT25256VI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
товар відсутній
| CAT25256XI-T2 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
товар відсутній
| CAT25256YI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
товар відсутній
| CAV25256VE-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
товар відсутній
| CAV25256YE-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
товар відсутній
| FQB30N06LTM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22.6A; Idm: 128A; 79W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22.6A
Pulsed drain current: 128A
Power dissipation: 79W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22.6A; Idm: 128A; 79W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22.6A
Pulsed drain current: 128A
Power dissipation: 79W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FQD30N06TM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.3A; Idm: 90.8A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14.3A
Pulsed drain current: 90.8A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.3A; Idm: 90.8A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14.3A
Pulsed drain current: 90.8A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDP030N06 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 138A; 205W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 138A
Power dissipation: 205W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 138A; 205W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 138A
Power dissipation: 205W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FDMS030N06B |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| MMSZ5226BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 3719 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 149+ | 2.63 грн |
| 167+ | 2.18 грн |
| 250+ | 1.92 грн |
| 506+ | 1.69 грн |
| 1389+ | 1.6 грн |
| MMSZ5251BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Semiconductor structure: single diode
Zener voltage: 22V
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Semiconductor structure: single diode
Zener voltage: 22V
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Tolerance: ±5%
на замовлення 2997 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 102+ | 3.85 грн |
| 141+ | 2.58 грн |
| 250+ | 2.08 грн |
| 471+ | 1.77 грн |
| 1295+ | 1.67 грн |
| FDMS86163P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 104W; PQFN8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±25V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 104W; PQFN8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±25V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NCP1117ST50T3G | |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
Manufacturer series: NCP1117
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
Manufacturer series: NCP1117
на замовлення 1883 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 34.4 грн |
| 13+ | 28.82 грн |
| 40+ | 21.42 грн |
| 108+ | 20.25 грн |
| 1000+ | 20.04 грн |
| MMSD4448 |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A
Mounting: SMD
Power dissipation: 0.4W
Type of diode: switching
Case: SOD123
Capacitance: 2pF
Max. off-state voltage: 100V
Max. forward voltage: 1V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 2A
Leakage current: 5µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A
Mounting: SMD
Power dissipation: 0.4W
Type of diode: switching
Case: SOD123
Capacitance: 2pF
Max. off-state voltage: 100V
Max. forward voltage: 1V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 2A
Leakage current: 5µA
на замовлення 3970 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 57+ | 6.88 грн |
| 76+ | 4.83 грн |
| 229+ | 3.68 грн |
| 628+ | 3.48 грн |
| 3000+ | 3.45 грн |
| MMSZ43T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
товар відсутній
| MMSZ4678T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 1.8V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Case: SOD123
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 1.8V
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 1.8V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Case: SOD123
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 1.8V
на замовлення 6154 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 10.16 грн |
| 53+ | 6.9 грн |
| 76+ | 4.82 грн |
| 118+ | 3.1 грн |
| 250+ | 2.7 грн |
| 500+ | 2.41 грн |
| 583+ | 1.43 грн |
| 1603+ | 1.35 грн |
| MMSZ4679T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2V; SMD; reel,tape; SOD123; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2V; SMD; reel,tape; SOD123; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 5µA
на замовлення 1875 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 10.95 грн |
| 50+ | 7.26 грн |
| 72+ | 5.08 грн |
| 112+ | 3.26 грн |
| 250+ | 2.85 грн |
| 500+ | 2.54 грн |
| 541+ | 1.55 грн |
| 1486+ | 1.47 грн |
| MMSZ4680T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.2V; SMD; reel,tape; SOD123; single diode; 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 4µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.2V; SMD; reel,tape; SOD123; single diode; 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 4µA
на замовлення 2825 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 3.18 грн |
| 150+ | 2.66 грн |
| 425+ | 2.03 грн |
| 1150+ | 1.92 грн |
| MMSZ4681T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; SOD123; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 2µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; SOD123; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 2µA
на замовлення 5255 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 90+ | 4.46 грн |
| 135+ | 2.76 грн |
| 435+ | 1.94 грн |
| 1195+ | 1.84 грн |
| MMSZ4682T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123; single diode; 1uA
Kind of package: reel; tape
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 2.7V
Leakage current: 1µA
Power dissipation: 0.5W
Type of diode: Zener
Mounting: SMD
Case: SOD123
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123; single diode; 1uA
Kind of package: reel; tape
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 2.7V
Leakage current: 1µA
Power dissipation: 0.5W
Type of diode: Zener
Mounting: SMD
Case: SOD123
товар відсутній
| MMSZ4683T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; reel,tape; SOD123; single diode; 0.8uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.8µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; reel,tape; SOD123; single diode; 0.8uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.8µA
на замовлення 2150 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 140+ | 2.81 грн |
| 155+ | 2.34 грн |
| 455+ | 1.87 грн |
| 1250+ | 1.77 грн |
| MMSZ4684T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 7.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 7.5µA
на замовлення 7605 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 140+ | 2.85 грн |
| 155+ | 2.38 грн |
| 470+ | 1.79 грн |
| 1290+ | 1.7 грн |
| MMSZ4686T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 2.66 грн |
| 165+ | 2.21 грн |
| 485+ | 1.76 грн |
| 1330+ | 1.67 грн |
| MMSZ4687T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; SMD; reel,tape; SOD123; single diode; 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 4µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; SMD; reel,tape; SOD123; single diode; 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 4µA
на замовлення 4300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 175+ | 2.37 грн |
| 200+ | 1.98 грн |
| 500+ | 1.75 грн |
| 575+ | 1.52 грн |
| 1525+ | 1.44 грн |
| MMSZ4689T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode; 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 10µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode; 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 10µA
на замовлення 8245 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 95+ | 4.22 грн |
| 130+ | 2.8 грн |
| 410+ | 2.09 грн |
| 500+ | 2.08 грн |
| 1120+ | 1.97 грн |
| MMSZ4690T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123; single diode; 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 10µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123; single diode; 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 10µA
на замовлення 115 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 115+ | 2.9 грн |
| MMSZ4691T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; SOD123; single diode; 10uA
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 10µA
Case: SOD123
Zener voltage: 6.2V
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; SOD123; single diode; 10uA
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 10µA
Case: SOD123
Zener voltage: 6.2V
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
товар відсутній