![NRVHP420MFDT1G NRVHP420MFDT1G](https://www.mouser.com/images/onsemiconductor/lrg/SO8FL-Dual-506BT_t.jpg)
на замовлення 1500 шт:
термін постачання 161-170 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
5+ | 76.97 грн |
10+ | 51.17 грн |
100+ | 35.32 грн |
500+ | 30.45 грн |
1000+ | 28.85 грн |
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Технічний опис NRVHP420MFDT1G onsemi
Description: DIODE ARRAY GP 200V 2A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 2A, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A, Current - Reverse Leakage @ Vr: 500 nA @ 200 V, Qualification: AEC-Q101.
Інші пропозиції NRVHP420MFDT1G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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NRVHP420MFDT1G | Виробник : ONSEMI |
![]() Description: Diode: rectifying; SMD; 200V; 2A; 40ns; DFN8; Ufmax: 1.1V; Ifsm: 40A Mounting: SMD Max. forward impulse current: 40A Case: DFN8 Kind of package: reel; tape Application: automotive industry Type of diode: rectifying Max. off-state voltage: 200V Max. load current: 4A Max. forward voltage: 1.1V Load current: 2A Semiconductor structure: double independent Reverse recovery time: 40ns кількість в упаковці: 1 шт |
товар відсутній |
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NRVHP420MFDT1G | Виробник : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 2A Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Qualification: AEC-Q101 |
товар відсутній |
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NRVHP420MFDT1G | Виробник : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 2A Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Qualification: AEC-Q101 |
товар відсутній |
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NRVHP420MFDT1G | Виробник : ON Semiconductor |
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товар відсутній |
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NRVHP420MFDT1G | Виробник : ONSEMI |
![]() Description: Diode: rectifying; SMD; 200V; 2A; 40ns; DFN8; Ufmax: 1.1V; Ifsm: 40A Mounting: SMD Max. forward impulse current: 40A Case: DFN8 Kind of package: reel; tape Application: automotive industry Type of diode: rectifying Max. off-state voltage: 200V Max. load current: 4A Max. forward voltage: 1.1V Load current: 2A Semiconductor structure: double independent Reverse recovery time: 40ns |
товар відсутній |