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AFGB40T65SQDN onsemi
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Description: 650V/40A FS4 IGBT TO263 A
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 131 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 17.6ns/75.2ns
Switching Energy: 858µJ (on), 229µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 76 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 238 W
Qualification: AEC-Q101
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 361.73 грн |
10+ | 292.57 грн |
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Технічний опис AFGB40T65SQDN onsemi
Description: 650V/40A FS4 IGBT TO263 A, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 131 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A, Supplier Device Package: TO-263 (D2Pak), Td (on/off) @ 25°C: 17.6ns/75.2ns, Switching Energy: 858µJ (on), 229µJ (off), Test Condition: 400V, 40A, 6Ohm, 15V, Gate Charge: 76 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 238 W, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції AFGB40T65SQDN
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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AFGB40T65SQDN | Виробник : ON Semiconductor |
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товар відсутній |
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AFGB40T65SQDN | Виробник : ONSEMI |
![]() Description: Transistor: IGBT; 650V; 40A; 119W; D2PAK; automotive industry Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 119W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: SMD Gate charge: 76nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Application: automotive industry кількість в упаковці: 800 шт |
товар відсутній |
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AFGB40T65SQDN | Виробник : ONSEMI |
![]() Kollektor-Emitter-Sättigungsspannung: 1.6 MSL: MSL 1 - unbegrenzt Kollektor-Emitter-Sättigungsspannung Vce(on): 1.6 Verlustleistung Pd: 238 Verlustleistung: 238 Bauform - Transistor: TO-263 (D2PAK) Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Kollektor-Emitter-Spannung V(br)ceo: 650 Anzahl der Pins: 3 Produktpalette: - Kollektor-Emitter-Spannung, max.: 650 DC-Kollektorstrom: 80 Betriebstemperatur, max.: 175 Kollektorstrom: 80 SVHC: Lead (10-Jun-2022) |
товар відсутній |
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![]() |
AFGB40T65SQDN | Виробник : ONSEMI |
![]() Kollektor-Emitter-Sättigungsspannung: 1.6 MSL: MSL 1 - unbegrenzt Verlustleistung: 238 Bauform - Transistor: TO-263 (D2PAK) Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3 Produktpalette: - Kollektor-Emitter-Spannung, max.: 650 Betriebstemperatur, max.: 175 Kollektorstrom: 80 SVHC: Lead (10-Jun-2022) |
товар відсутній |
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AFGB40T65SQDN | Виробник : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 131 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 17.6ns/75.2ns Switching Energy: 858µJ (on), 229µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 76 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 238 W Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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AFGB40T65SQDN | Виробник : onsemi |
![]() |
товар відсутній |
|
![]() |
AFGB40T65SQDN | Виробник : ONSEMI |
![]() Description: Transistor: IGBT; 650V; 40A; 119W; D2PAK; automotive industry Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 119W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: SMD Gate charge: 76nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Application: automotive industry |
товар відсутній |