APTGT75DH120T3G MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Case: SP3F
Mechanical mounting: screw
Semiconductor structure: diode/transistor
Collector current: 75A
Type of module: IGBT
Technology: Field Stop; Trench
Topology: asymmetrical bridge; NTC thermistor
Pulsed collector current: 175A
Gate-emitter voltage: ±20V
кількість в упаковці: 13 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Case: SP3F
Mechanical mounting: screw
Semiconductor structure: diode/transistor
Collector current: 75A
Type of module: IGBT
Technology: Field Stop; Trench
Topology: asymmetrical bridge; NTC thermistor
Pulsed collector current: 175A
Gate-emitter voltage: ±20V
кількість в упаковці: 13 шт
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Технічний опис APTGT75DH120T3G MICROCHIP (MICROSEMI)
Category: IGBT modules, Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV, Max. off-state voltage: 1.2kV, Electrical mounting: Press-in PCB, Case: SP3F, Mechanical mounting: screw, Semiconductor structure: diode/transistor, Collector current: 75A, Type of module: IGBT, Technology: Field Stop; Trench, Topology: asymmetrical bridge; NTC thermistor, Pulsed collector current: 175A, Gate-emitter voltage: ±20V, кількість в упаковці: 13 шт.
Інші пропозиції APTGT75DH120T3G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APTGT75DH120T3G | Виробник : Microchip Technology | Description: IGBT MODULE 1200V 110A 357W SP3 |
товар відсутній |
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APTGT75DH120T3G | Виробник : Microchip Technology | IGBT Modules PM-IGBT-TFS-SP3F |
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APTGT75DH120T3G | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Case: SP3F Mechanical mounting: screw Semiconductor structure: diode/transistor Collector current: 75A Type of module: IGBT Technology: Field Stop; Trench Topology: asymmetrical bridge; NTC thermistor Pulsed collector current: 175A Gate-emitter voltage: ±20V |
товар відсутній |