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TLE49641KXTSA1 TLE49641KXTSA1 Infineon Technologies Infineon-TLE4964_1K-DS-v01_00-en.pdf?fileId=db3a304338ec6d390138fc87bfb376c5 Description: MAGNETIC SWITCH UNIPOLAR SC59
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 18mT Trip, 12.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
TLE49641KXTSA1 TLE49641KXTSA1 Infineon Technologies Infineon-TLE4964_1K-DS-v01_00-en.pdf?fileId=db3a304338ec6d390138fc87bfb376c5 Description: MAGNETIC SWITCH UNIPOLAR SC59
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 18mT Trip, 12.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2989 шт:
термін постачання 21-31 дні (днів)
5+61.81 грн
10+ 45.48 грн
25+ 39.15 грн
50+ 35.43 грн
100+ 30.18 грн
500+ 26.25 грн
1000+ 22.59 грн
Мінімальне замовлення: 5
TLE49645MXTMA1 TLE49645MXTMA1 Infineon Technologies Infineon-TLE4964_5M-DS-v01_00-en.pdf?fileId=db3a30433cabdd35013cc959c5666509 Description: MAG SWITCH IC HALL EFF SOT23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.9mT Trip, 5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
10000+16.55 грн
Мінімальне замовлення: 10000
TLE49645MXTMA1 TLE49645MXTMA1 Infineon Technologies Infineon-TLE4964_5M-DS-v01_00-en.pdf?fileId=db3a30433cabdd35013cc959c5666509 Description: MAG SWITCH IC HALL EFF SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.9mT Trip, 5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
на замовлення 29844 шт:
термін постачання 21-31 дні (днів)
8+39.68 грн
10+ 29.46 грн
25+ 25.34 грн
50+ 22.93 грн
100+ 19.54 грн
500+ 16.99 грн
1000+ 14.71 грн
Мінімальне замовлення: 8
TLE49641MXTMA1 TLE49641MXTMA1 Infineon Technologies Infineon-TLE4964_1M-DS-v01_00-en.pdf?fileId=db3a3043397219b601397256e86f0059 Description: MAG SWITCH IC HALL EFF SOT23-3
Packaging: Tape & Reel (TR)
Operating Temperature: -40°C ~ 170°C (TJ)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+19.11 грн
Мінімальне замовлення: 10000
TLE49641MXTMA1 TLE49641MXTMA1 Infineon Technologies Infineon-TLE4964_1M-DS-v01_00-en.pdf?fileId=db3a3043397219b601397256e86f0059 Description: MAG SWITCH IC HALL EFF SOT23-3
Packaging: Cut Tape (CT)
Operating Temperature: -40°C ~ 170°C (TJ)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 19000 шт:
термін постачання 21-31 дні (днів)
6+57.23 грн
10+ 41.66 грн
25+ 35.92 грн
50+ 32.49 грн
100+ 27.68 грн
500+ 24.07 грн
1000+ 20.71 грн
5000+ 18.35 грн
Мінімальне замовлення: 6
W232-10X W232-10X Infineon Technologies W232.pdf Description: IC CLK ZDB 10OUT 140MHZ 24TSSOP
Packaging: Tube
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Frequency - Max: 140MHz
Type: Zero Delay Buffer
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Supplier Device Package: 24-TSSOP
DigiKey Programmable: Not Verified
на замовлення 4176 шт:
термін постачання 21-31 дні (днів)
143+147.93 грн
Мінімальне замовлення: 143
BTS5233-2GS Infineon Technologies Description: PMIC - POWER DISTRIBUTION SWITCH
Packaging: Bulk
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
1039+20.43 грн
Мінімальне замовлення: 1039
BTS52332GSXUMA1 Infineon Technologies Description: PMIC - POWER DISTRIBUTION SWITCH
Packaging: Bulk
Part Status: Active
товар відсутній
BTS52372GXUMA1 Infineon Technologies Description: PMIC - POWER DISTRIBUTION SWITCH
Packaging: Bulk
Part Status: Active
на замовлення 98000 шт:
термін постачання 21-31 дні (днів)
297+71.15 грн
Мінімальне замовлення: 297
BTS5264SFXUMA1 Infineon Technologies Description: PMIC - POWER DISTRIBUTION SWITCH
Packaging: Bulk
Part Status: Active
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
65+328.98 грн
Мінімальне замовлення: 65
BTS5234LAUMA1 BTS5234LAUMA1 Infineon Technologies BTS5234L.pdf Description: IC PWR SWITCH N-CHAN 1:1 DSO-12
Features: Auto Restart
Packaging: Bulk
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-12-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
на замовлення 225 шт:
термін постачання 21-31 дні (днів)
125+183.89 грн
Мінімальне замовлення: 125
TLE4470GXUMA2 TLE4470GXUMA2 Infineon Technologies Infineon-TLE4470-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f72bf071f3a Description: IC REG LINEAR POS ADJ 14DSO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable (Fixed)
Mounting Type: Surface Mount
Current - Output: 100mA, 250mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 500 µA
Voltage - Input (Max): 45V
Number of Regulators: 2
Supplier Device Package: PG-DSO-14
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 5V, (5V), Tracking
Control Features: Enable, Reset
Grade: Automotive
PSRR: 60dB (20Hz ~ 20kHz)
Voltage Dropout (Max): 0.5V @ 100mA, 0.6V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
товар відсутній
BCX68-16 BCX68-16 Infineon Technologies INFNS17218-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 20V 1A SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
товар відсутній
BCX68-25 BCX68-25 Infineon Technologies INFNS17218-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
BCX68-25E6327 BCX68-25E6327 Infineon Technologies INFNS12871-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
на замовлення 2975 шт:
термін постачання 21-31 дні (днів)
BCX68-16E6327 BCX68-16E6327 Infineon Technologies INFNS12871-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89-4-2
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
товар відсутній
BCX6816E6327HTSA1 BCX6816E6327HTSA1 Infineon Technologies bcx68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ef403903e7 Description: TRANS NPN 20V 1A SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
на замовлення 31400 шт:
термін постачання 21-31 дні (днів)
1598+13.57 грн
Мінімальне замовлення: 1598
BCX6816H6327XTSA1 BCX6816H6327XTSA1 Infineon Technologies bcx68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ef403903e7 Description: TRANS NPN 20V 1A SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Qualification: AEC-Q101
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
1224+17.86 грн
Мінімальне замовлення: 1224
BTS3118D BTS3118D Infineon Technologies INFNS11531-1.pdf?t.download=true&u=5oefqw Description: BTS3118 - HITFET, AUTOMOTIVE SMA
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
товар відсутній
S26KS512SDGBHM030 S26KS512SDGBHM030 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 512MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товар відсутній
S26KS128SDGBHA030 S26KS128SDGBHA030 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 128MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
товар відсутній
BSZ0910NDXTMA1 BSZ0910NDXTMA1 Infineon Technologies Infineon-BSZ0910ND-DS-v02_00-EN.pdf?fileId=5546d462602a9dc8016054778b852cc4 Description: DIFFERENTIATED MOSFETS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-WISON-8
Part Status: Obsolete
товар відсутній
BSZ0910NDXTMA1 BSZ0910NDXTMA1 Infineon Technologies Infineon-BSZ0910ND-DS-v02_00-EN.pdf?fileId=5546d462602a9dc8016054778b852cc4 Description: DIFFERENTIATED MOSFETS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-WISON-8
Part Status: Obsolete
товар відсутній
IPA052N08NM5SXKSA1 Infineon Technologies Infineon-IPA052N08NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfde8986e2a Description: MOSFET N-CH 80V 64A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 32A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 65µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
на замовлення 490 шт:
термін постачання 21-31 дні (днів)
2+172.45 грн
10+ 148.94 грн
100+ 119.71 грн
Мінімальне замовлення: 2
IRF150P220AKMA1 IRF150P220AKMA1 Infineon Technologies Infineon-IRF150P220-DataSheet-v01_01-EN.pdf?fileId=5546d46266a498f50166aca241ac65c9 Description: MOSFET N-CH 150V 203A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 203A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 556W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 265µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 75 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1+791.28 грн
25+ 608.11 грн
100+ 544.11 грн
500+ 450.55 грн
1000+ 405.49 грн
IRF150P221AKMA1 IRF150P221AKMA1 Infineon Technologies Infineon-IRF150P221-DataSheet-v01_01-EN.pdf?fileId=5546d46266a498f50166acab699365cd Description: MOSFET N-CH 150V 186A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 186A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 264µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 75 V
на замовлення 186 шт:
термін постачання 21-31 дні (днів)
1+535.66 грн
25+ 411.68 грн
100+ 368.35 грн
PBL38621/2SOT PBL38621/2SOT Infineon Technologies Part_Number_Guide_Web.pdf Description: IC TELECOM INTERFACE PDSO-24
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-DSO-24-8
Number of Circuits: 1
Power (Watts): 290 mW
на замовлення 393 шт:
термін постачання 21-31 дні (днів)
107+196.18 грн
Мінімальне замовлення: 107
PBL38620/2SHA PBL38620/2SHA Infineon Technologies PBL38620,2 v2.pdf Description: IC TELECOM INTERFACE 24-SSOP
Packaging: Bulk
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-SSOP-24-1
Part Status: Obsolete
Number of Circuits: 1
Power (Watts): 290 mW
на замовлення 26000 шт:
термін постачання 21-31 дні (днів)
80+274.3 грн
Мінімальне замовлення: 80
CY7C1382B-133AC CY7C1382B-133AC Infineon Technologies CY7C1380B%2C%201382B.pdf Description: IC SRAM 18MBIT 133MHZ 100LQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 4.2 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 295 шт:
термін постачання 21-31 дні (днів)
20+1094.24 грн
Мінімальне замовлення: 20
BSP321PH6327XTSA1 BSP321PH6327XTSA1 Infineon Technologies Infineon-BSP321P-DS-v01_06-en.pdf?fileId=db3a30433b47825b013b605d0e215a39 Description: MOSFET P-CH 100V 980MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-SOT223-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
BTS500251TADATMA1 BTS500251TADATMA1 Infineon Technologies Infineon-BTS50025-1TAD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015baf36cff24613 Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3.9mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 25A
Ratio - Input:Output: 1:1
Supplier Device Package: P/PG-TO-263-7-10
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
MB90F349CEPF-G-N2E1 MB90F349CEPF-G-N2E1 Infineon Technologies Description: IC MCU 16BIT 256KB FLASH 100QFP
Packaging: Bulk
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 24x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-QFP (14x20)
Part Status: Obsolete
Number of I/O: 80
DigiKey Programmable: Not Verified
товар відсутній
MB90F349CESPMC-G-N9E1 MB90F349CESPMC-G-N9E1 Infineon Technologies Description: IC MCU 16BIT 256KB FLASH 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 24x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Obsolete
Number of I/O: 82
DigiKey Programmable: Not Verified
товар відсутній
BSZ039N06NSATMA1 BSZ039N06NSATMA1 Infineon Technologies Infineon-BSZ039N06NS-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a53c25c8e532d Description: MOSFET N-CH 60V 18A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
товар відсутній
SPP35N10 SPP35N10 Infineon Technologies SPI%2CSPP35N10.pdf Description: MOSFET N-CH 100V 35A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 26.4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
на замовлення 31651 шт:
термін постачання 21-31 дні (днів)
408+51.61 грн
Мінімальне замовлення: 408
IPB35N10S3L26ATMA1 IPB35N10S3L26ATMA1 Infineon Technologies Infineon-IPB35N10S3L_26-DS-v01_01-en.pdf?fileId=db3a304330046413013008a994583e77 Description: MOSFET N-CH 100V 35A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 26.3mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
1000+69.78 грн
2000+ 63.84 грн
Мінімальне замовлення: 1000
IPB35N10S3L26ATMA1 IPB35N10S3L26ATMA1 Infineon Technologies Infineon-IPB35N10S3L_26-DS-v01_01-en.pdf?fileId=db3a304330046413013008a994583e77 Description: MOSFET N-CH 100V 35A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 26.3mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4475 шт:
термін постачання 21-31 дні (днів)
3+147.27 грн
10+ 117.57 грн
100+ 93.6 грн
500+ 74.33 грн
Мінімальне замовлення: 3
TLS810D1LDV33BOARDTOBO1 TLS810D1LDV33BOARDTOBO1 Infineon Technologies Infineon-Z8F55443029_TLS805x1LD-TLS810x1LD-Demoboard-UserManual-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a46f9d9c8037f Description: TLS810D1LDV33 BOARD
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
TLS820D0ELV33XUMA1 TLS820D0ELV33XUMA1 Infineon Technologies Infineon-TLS820D0-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969ed9d0b425c Description: IC REG LIN 3.3V 200MA SSOP-14-5
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
BUZ77B Infineon Technologies INFNS01334-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.7A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
товар відсутній
IPU80R2K8CEAKMA1 IPU80R2K8CEAKMA1 Infineon Technologies Infineon-IPX80R2K8CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402f5e5f1f274f Description: MOSFET N-CH 800V 1.9A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
на замовлення 14499 шт:
термін постачання 21-31 дні (днів)
860+25.01 грн
Мінімальне замовлення: 860
IPU80R2K8CEAKMA1 IPU80R2K8CEAKMA1 Infineon Technologies Infineon-IPX80R2K8CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402f5e5f1f274f Description: MOSFET N-CH 800V 1.9A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
товар відсутній
IPU80R1K4CEAKMA1 IPU80R1K4CEAKMA1 Infineon Technologies Infineon-IPX80R1K4CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402f3b471926eb Description: MOSFET N-CH 800V 3.9A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
товар відсутній
IPU80R1K0CEBKMA1 IPU80R1K0CEBKMA1 Infineon Technologies Infineon-IPX80R1K0CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402ebac5992590 Description: MOSFET N-CH 800V 5.7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO251-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
на замовлення 1410 шт:
термін постачання 21-31 дні (днів)
520+41.44 грн
Мінімальне замовлення: 520
IPU80R1K0CEAKMA1 IPU80R1K0CEAKMA1 Infineon Technologies Infineon-IPX80R1K0CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402ebac5992590 Description: MOSFET N-CH 800V 5.7A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO251-3-341
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
на замовлення 124500 шт:
термін постачання 21-31 дні (днів)
371+57.87 грн
Мінімальне замовлення: 371
IPU80R1K0CEAKMA1 IPU80R1K0CEAKMA1 Infineon Technologies Infineon-IPX80R1K0CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402ebac5992590 Description: MOSFET N-CH 800V 5.7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO251-3-341
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
товар відсутній
DEMOBGT60LTR11AIPTOBO1 DEMOBGT60LTR11AIPTOBO1 Infineon Technologies Infineon-BGT60LTR11AIP_ProductBrief-ProductBrief-v01_00-EN.pdf?fileId=5546d4627564a75001756a38b2e74bc9 Description: EVAL BOARD FOR BGT60LTR11AIP
Packaging: Box
For Use With/Related Products: BGT60LTR11AIP
Frequency: 60GHz
Type: Transceiver; RADAR
Supplied Contents: Board(s)
Part Status: Active
Sensitivity: 60GHz
Sensor Type: Radar
Utilized IC / Part: BGT60LTR11AIP
Sensing Range: 7m
на замовлення 52 шт:
термін постачання 21-31 дні (днів)
1+9685.31 грн
PEF 22554 E V2.1 Infineon Technologies PEF22554_V3.1_PB_Rev3.0.pdf Description: IC TELECOM INTERFACE 160LBGA
товар відсутній
PEF 22554 E V2.1-G Infineon Technologies PEF22554_V3.1_PB_Rev3.0.pdf Description: IC TELECOM INTERFACE 160LBGA
Packaging: Tray
Package / Case: 160-LBGA
Mounting Type: Surface Mount
Function: Framer, Line Interface Unit (LIU)
Interface: E1, HDLC, J1, T1
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V, 3.3V
Supplier Device Package: P/PG-LBGA-160-1
Number of Circuits: 4
товар відсутній
BSZ0911LSATMA1 BSZ0911LSATMA1 Infineon Technologies Infineon-BSZ0911LS-DataSheet-v02_00-EN.pdf?fileId=5546d46271bf4f9201720eb167a17ce3 Description: MOSFET N-CH 30V 12A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 15 V
на замовлення 29980 шт:
термін постачання 21-31 дні (днів)
8+43.49 грн
10+ 35.56 грн
100+ 24.73 грн
500+ 18.12 грн
1000+ 14.73 грн
2000+ 13.16 грн
Мінімальне замовлення: 8
BCR430UXTSA2 BCR430UXTSA2 Infineon Technologies Infineon-BCR%20430U-DataSheet-v01_03-EN.pdf?fileId=5546d4627506bb32017541202bc15395 Description: IC LED DRV LIN PWM 100MA SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Voltage - Output: 42V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 100mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: PG-SOT23-6-1
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42V
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+10.28 грн
Мінімальне замовлення: 3000
ISZ065N03L5SATMA1 ISZ065N03L5SATMA1 Infineon Technologies Infineon-ISZ065N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8cb687b0994 Description: MOSFET N-CH 30V 12A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 15 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
5000+17.07 грн
10000+ 15.22 грн
25000+ 15.07 грн
Мінімальне замовлення: 5000
BSZ0909LSATMA1 BSZ0909LSATMA1 Infineon Technologies Infineon-BSZ0909LS-DataSheet-v02_00-EN.pdf?fileId=5546d46271bf4f9201720e9f226c7cdc Description: MOSFET N-CH 30V 19A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
товар відсутній
ISZ0501NLSATMA1 ISZ0501NLSATMA1 Infineon Technologies Infineon-ISZ0501NLS-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016ff0ac1554515f Description: 25V, N-CH MOSFET, LOGIC LEVEL, P
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-25
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 12 V
товар відсутній
BSO615CGXUMA1 BSO615CGXUMA1 Infineon Technologies Infineon-BSO615CG-DS-v02_01-en.pdf?fileId=db3a304412b407950112b435049f6230 Description: MOSFET N/P-CH 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V, 460pF @ 25V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V, 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 20µA, 2V @ 450µA
Supplier Device Package: PG-DSO-8
Part Status: Last Time Buy
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
2500+38.5 грн
5000+ 35.22 грн
12500+ 33.89 грн
Мінімальне замовлення: 2500
2EDL8024GXUMA1 2EDL8024GXUMA1 Infineon Technologies Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a Description: INT. POWERSTAGE/DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
IQE013N04LM6ATMA1 IQE013N04LM6ATMA1 Infineon Technologies Infineon-IQE013N04LM6-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a01735298bd175b06 Description: MOSFET N-CH 40V 31A/205A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 51µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+82.8 грн
Мінімальне замовлення: 5000
BSC0402NSATMA1 BSC0402NSATMA1 Infineon Technologies Infineon-BSC0402NS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae6017015d4682a2212 Description: MOSFET N-CH 150V 80A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 40A, 10
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 107µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 75 V
товар відсутній
IPDD60R170CFD7XTMA1 IPDD60R170CFD7XTMA1 Infineon Technologies Infineon-IPDD60R170CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c2e907f42b4 Description: MOSFET N-CH 600V 19A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.9A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1016 pF @ 400 V
товар відсутній
TLE49641KXTSA1 Infineon-TLE4964_1K-DS-v01_00-en.pdf?fileId=db3a304338ec6d390138fc87bfb376c5
TLE49641KXTSA1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SC59
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 18mT Trip, 12.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
TLE49641KXTSA1 Infineon-TLE4964_1K-DS-v01_00-en.pdf?fileId=db3a304338ec6d390138fc87bfb376c5
TLE49641KXTSA1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SC59
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 18mT Trip, 12.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2989 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+61.81 грн
10+ 45.48 грн
25+ 39.15 грн
50+ 35.43 грн
100+ 30.18 грн
500+ 26.25 грн
1000+ 22.59 грн
Мінімальне замовлення: 5
TLE49645MXTMA1 Infineon-TLE4964_5M-DS-v01_00-en.pdf?fileId=db3a30433cabdd35013cc959c5666509
TLE49645MXTMA1
Виробник: Infineon Technologies
Description: MAG SWITCH IC HALL EFF SOT23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.9mT Trip, 5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10000+16.55 грн
Мінімальне замовлення: 10000
TLE49645MXTMA1 Infineon-TLE4964_5M-DS-v01_00-en.pdf?fileId=db3a30433cabdd35013cc959c5666509
TLE49645MXTMA1
Виробник: Infineon Technologies
Description: MAG SWITCH IC HALL EFF SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.9mT Trip, 5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
на замовлення 29844 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+39.68 грн
10+ 29.46 грн
25+ 25.34 грн
50+ 22.93 грн
100+ 19.54 грн
500+ 16.99 грн
1000+ 14.71 грн
Мінімальне замовлення: 8
TLE49641MXTMA1 Infineon-TLE4964_1M-DS-v01_00-en.pdf?fileId=db3a3043397219b601397256e86f0059
TLE49641MXTMA1
Виробник: Infineon Technologies
Description: MAG SWITCH IC HALL EFF SOT23-3
Packaging: Tape & Reel (TR)
Operating Temperature: -40°C ~ 170°C (TJ)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10000+19.11 грн
Мінімальне замовлення: 10000
TLE49641MXTMA1 Infineon-TLE4964_1M-DS-v01_00-en.pdf?fileId=db3a3043397219b601397256e86f0059
TLE49641MXTMA1
Виробник: Infineon Technologies
Description: MAG SWITCH IC HALL EFF SOT23-3
Packaging: Cut Tape (CT)
Operating Temperature: -40°C ~ 170°C (TJ)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 19000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+57.23 грн
10+ 41.66 грн
25+ 35.92 грн
50+ 32.49 грн
100+ 27.68 грн
500+ 24.07 грн
1000+ 20.71 грн
5000+ 18.35 грн
Мінімальне замовлення: 6
W232-10X W232.pdf
W232-10X
Виробник: Infineon Technologies
Description: IC CLK ZDB 10OUT 140MHZ 24TSSOP
Packaging: Tube
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Frequency - Max: 140MHz
Type: Zero Delay Buffer
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Supplier Device Package: 24-TSSOP
DigiKey Programmable: Not Verified
на замовлення 4176 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
143+147.93 грн
Мінімальне замовлення: 143
BTS5233-2GS
Виробник: Infineon Technologies
Description: PMIC - POWER DISTRIBUTION SWITCH
Packaging: Bulk
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1039+20.43 грн
Мінімальне замовлення: 1039
BTS52332GSXUMA1
Виробник: Infineon Technologies
Description: PMIC - POWER DISTRIBUTION SWITCH
Packaging: Bulk
Part Status: Active
товар відсутній
BTS52372GXUMA1
Виробник: Infineon Technologies
Description: PMIC - POWER DISTRIBUTION SWITCH
Packaging: Bulk
Part Status: Active
на замовлення 98000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
297+71.15 грн
Мінімальне замовлення: 297
BTS5264SFXUMA1
Виробник: Infineon Technologies
Description: PMIC - POWER DISTRIBUTION SWITCH
Packaging: Bulk
Part Status: Active
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
65+328.98 грн
Мінімальне замовлення: 65
BTS5234LAUMA1 BTS5234L.pdf
BTS5234LAUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-12
Features: Auto Restart
Packaging: Bulk
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-12-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
на замовлення 225 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
125+183.89 грн
Мінімальне замовлення: 125
TLE4470GXUMA2 Infineon-TLE4470-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f72bf071f3a
TLE4470GXUMA2
Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 14DSO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable (Fixed)
Mounting Type: Surface Mount
Current - Output: 100mA, 250mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 500 µA
Voltage - Input (Max): 45V
Number of Regulators: 2
Supplier Device Package: PG-DSO-14
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 5V, (5V), Tracking
Control Features: Enable, Reset
Grade: Automotive
PSRR: 60dB (20Hz ~ 20kHz)
Voltage Dropout (Max): 0.5V @ 100mA, 0.6V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
товар відсутній
BCX68-16 INFNS17218-1.pdf?t.download=true&u=5oefqw
BCX68-16
Виробник: Infineon Technologies
Description: TRANS NPN 20V 1A SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
товар відсутній
BCX68-25 INFNS17218-1.pdf?t.download=true&u=5oefqw
BCX68-25
Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
BCX68-25E6327 INFNS12871-1.pdf?t.download=true&u=5oefqw
BCX68-25E6327
Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
на замовлення 2975 шт:
термін постачання 21-31 дні (днів)
BCX68-16E6327 INFNS12871-1.pdf?t.download=true&u=5oefqw
BCX68-16E6327
Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89-4-2
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
товар відсутній
BCX6816E6327HTSA1 bcx68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ef403903e7
BCX6816E6327HTSA1
Виробник: Infineon Technologies
Description: TRANS NPN 20V 1A SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
на замовлення 31400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1598+13.57 грн
Мінімальне замовлення: 1598
BCX6816H6327XTSA1 bcx68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ef403903e7
BCX6816H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS NPN 20V 1A SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Qualification: AEC-Q101
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1224+17.86 грн
Мінімальне замовлення: 1224
BTS3118D INFNS11531-1.pdf?t.download=true&u=5oefqw
BTS3118D
Виробник: Infineon Technologies
Description: BTS3118 - HITFET, AUTOMOTIVE SMA
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
товар відсутній
S26KS512SDGBHM030 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S26KS512SDGBHM030
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товар відсутній
S26KS128SDGBHA030 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S26KS128SDGBHA030
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
товар відсутній
BSZ0910NDXTMA1 Infineon-BSZ0910ND-DS-v02_00-EN.pdf?fileId=5546d462602a9dc8016054778b852cc4
BSZ0910NDXTMA1
Виробник: Infineon Technologies
Description: DIFFERENTIATED MOSFETS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-WISON-8
Part Status: Obsolete
товар відсутній
BSZ0910NDXTMA1 Infineon-BSZ0910ND-DS-v02_00-EN.pdf?fileId=5546d462602a9dc8016054778b852cc4
BSZ0910NDXTMA1
Виробник: Infineon Technologies
Description: DIFFERENTIATED MOSFETS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-WISON-8
Part Status: Obsolete
товар відсутній
IPA052N08NM5SXKSA1 Infineon-IPA052N08NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfde8986e2a
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 64A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 32A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 65µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
на замовлення 490 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+172.45 грн
10+ 148.94 грн
100+ 119.71 грн
Мінімальне замовлення: 2
IRF150P220AKMA1 Infineon-IRF150P220-DataSheet-v01_01-EN.pdf?fileId=5546d46266a498f50166aca241ac65c9
IRF150P220AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 203A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 203A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 556W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 265µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 75 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+791.28 грн
25+ 608.11 грн
100+ 544.11 грн
500+ 450.55 грн
1000+ 405.49 грн
IRF150P221AKMA1 Infineon-IRF150P221-DataSheet-v01_01-EN.pdf?fileId=5546d46266a498f50166acab699365cd
IRF150P221AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 186A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 186A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 264µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 75 V
на замовлення 186 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+535.66 грн
25+ 411.68 грн
100+ 368.35 грн
PBL38621/2SOT Part_Number_Guide_Web.pdf
PBL38621/2SOT
Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE PDSO-24
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-DSO-24-8
Number of Circuits: 1
Power (Watts): 290 mW
на замовлення 393 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
107+196.18 грн
Мінімальне замовлення: 107
PBL38620/2SHA PBL38620,2 v2.pdf
PBL38620/2SHA
Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE 24-SSOP
Packaging: Bulk
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-SSOP-24-1
Part Status: Obsolete
Number of Circuits: 1
Power (Watts): 290 mW
на замовлення 26000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
80+274.3 грн
Мінімальне замовлення: 80
CY7C1382B-133AC CY7C1380B%2C%201382B.pdf
CY7C1382B-133AC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT 133MHZ 100LQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 4.2 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 295 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
20+1094.24 грн
Мінімальне замовлення: 20
BSP321PH6327XTSA1 Infineon-BSP321P-DS-v01_06-en.pdf?fileId=db3a30433b47825b013b605d0e215a39
BSP321PH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 980MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-SOT223-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
BTS500251TADATMA1 Infineon-BTS50025-1TAD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015baf36cff24613
BTS500251TADATMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3.9mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 25A
Ratio - Input:Output: 1:1
Supplier Device Package: P/PG-TO-263-7-10
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
MB90F349CEPF-G-N2E1
MB90F349CEPF-G-N2E1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 100QFP
Packaging: Bulk
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 24x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-QFP (14x20)
Part Status: Obsolete
Number of I/O: 80
DigiKey Programmable: Not Verified
товар відсутній
MB90F349CESPMC-G-N9E1
MB90F349CESPMC-G-N9E1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 24x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Obsolete
Number of I/O: 82
DigiKey Programmable: Not Verified
товар відсутній
BSZ039N06NSATMA1 Infineon-BSZ039N06NS-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a53c25c8e532d
BSZ039N06NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 18A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
товар відсутній
SPP35N10 SPI%2CSPP35N10.pdf
SPP35N10
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 35A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 26.4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
на замовлення 31651 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
408+51.61 грн
Мінімальне замовлення: 408
IPB35N10S3L26ATMA1 Infineon-IPB35N10S3L_26-DS-v01_01-en.pdf?fileId=db3a304330046413013008a994583e77
IPB35N10S3L26ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 35A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 26.3mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+69.78 грн
2000+ 63.84 грн
Мінімальне замовлення: 1000
IPB35N10S3L26ATMA1 Infineon-IPB35N10S3L_26-DS-v01_01-en.pdf?fileId=db3a304330046413013008a994583e77
IPB35N10S3L26ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 35A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 26.3mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4475 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+147.27 грн
10+ 117.57 грн
100+ 93.6 грн
500+ 74.33 грн
Мінімальне замовлення: 3
TLS810D1LDV33BOARDTOBO1 Infineon-Z8F55443029_TLS805x1LD-TLS810x1LD-Demoboard-UserManual-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a46f9d9c8037f
TLS810D1LDV33BOARDTOBO1
Виробник: Infineon Technologies
Description: TLS810D1LDV33 BOARD
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
TLS820D0ELV33XUMA1 Infineon-TLS820D0-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969ed9d0b425c
TLS820D0ELV33XUMA1
Виробник: Infineon Technologies
Description: IC REG LIN 3.3V 200MA SSOP-14-5
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
BUZ77B INFNS01334-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.7A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
товар відсутній
IPU80R2K8CEAKMA1 Infineon-IPX80R2K8CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402f5e5f1f274f
IPU80R2K8CEAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 1.9A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
на замовлення 14499 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
860+25.01 грн
Мінімальне замовлення: 860
IPU80R2K8CEAKMA1 Infineon-IPX80R2K8CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402f5e5f1f274f
IPU80R2K8CEAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 1.9A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
товар відсутній
IPU80R1K4CEAKMA1 Infineon-IPX80R1K4CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402f3b471926eb
IPU80R1K4CEAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 3.9A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
товар відсутній
IPU80R1K0CEBKMA1 Infineon-IPX80R1K0CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402ebac5992590
IPU80R1K0CEBKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 5.7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO251-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
на замовлення 1410 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
520+41.44 грн
Мінімальне замовлення: 520
IPU80R1K0CEAKMA1 Infineon-IPX80R1K0CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402ebac5992590
IPU80R1K0CEAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 5.7A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO251-3-341
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
на замовлення 124500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
371+57.87 грн
Мінімальне замовлення: 371
IPU80R1K0CEAKMA1 Infineon-IPX80R1K0CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402ebac5992590
IPU80R1K0CEAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 5.7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO251-3-341
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
товар відсутній
DEMOBGT60LTR11AIPTOBO1 Infineon-BGT60LTR11AIP_ProductBrief-ProductBrief-v01_00-EN.pdf?fileId=5546d4627564a75001756a38b2e74bc9
DEMOBGT60LTR11AIPTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR BGT60LTR11AIP
Packaging: Box
For Use With/Related Products: BGT60LTR11AIP
Frequency: 60GHz
Type: Transceiver; RADAR
Supplied Contents: Board(s)
Part Status: Active
Sensitivity: 60GHz
Sensor Type: Radar
Utilized IC / Part: BGT60LTR11AIP
Sensing Range: 7m
на замовлення 52 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+9685.31 грн
PEF 22554 E V2.1 PEF22554_V3.1_PB_Rev3.0.pdf
Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE 160LBGA
товар відсутній
PEF 22554 E V2.1-G PEF22554_V3.1_PB_Rev3.0.pdf
Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE 160LBGA
Packaging: Tray
Package / Case: 160-LBGA
Mounting Type: Surface Mount
Function: Framer, Line Interface Unit (LIU)
Interface: E1, HDLC, J1, T1
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V, 3.3V
Supplier Device Package: P/PG-LBGA-160-1
Number of Circuits: 4
товар відсутній
BSZ0911LSATMA1 Infineon-BSZ0911LS-DataSheet-v02_00-EN.pdf?fileId=5546d46271bf4f9201720eb167a17ce3
BSZ0911LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 15 V
на замовлення 29980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+43.49 грн
10+ 35.56 грн
100+ 24.73 грн
500+ 18.12 грн
1000+ 14.73 грн
2000+ 13.16 грн
Мінімальне замовлення: 8
BCR430UXTSA2 Infineon-BCR%20430U-DataSheet-v01_03-EN.pdf?fileId=5546d4627506bb32017541202bc15395
BCR430UXTSA2
Виробник: Infineon Technologies
Description: IC LED DRV LIN PWM 100MA SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Voltage - Output: 42V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 100mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: PG-SOT23-6-1
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42V
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+10.28 грн
Мінімальне замовлення: 3000
ISZ065N03L5SATMA1 Infineon-ISZ065N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8cb687b0994
ISZ065N03L5SATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 15 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+17.07 грн
10000+ 15.22 грн
25000+ 15.07 грн
Мінімальне замовлення: 5000
BSZ0909LSATMA1 Infineon-BSZ0909LS-DataSheet-v02_00-EN.pdf?fileId=5546d46271bf4f9201720e9f226c7cdc
BSZ0909LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 19A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
товар відсутній
ISZ0501NLSATMA1 Infineon-ISZ0501NLS-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016ff0ac1554515f
ISZ0501NLSATMA1
Виробник: Infineon Technologies
Description: 25V, N-CH MOSFET, LOGIC LEVEL, P
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-25
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 12 V
товар відсутній
BSO615CGXUMA1 Infineon-BSO615CG-DS-v02_01-en.pdf?fileId=db3a304412b407950112b435049f6230
BSO615CGXUMA1
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V, 460pF @ 25V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V, 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 20µA, 2V @ 450µA
Supplier Device Package: PG-DSO-8
Part Status: Last Time Buy
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+38.5 грн
5000+ 35.22 грн
12500+ 33.89 грн
Мінімальне замовлення: 2500
2EDL8024GXUMA1 Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a
2EDL8024GXUMA1
Виробник: Infineon Technologies
Description: INT. POWERSTAGE/DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
IQE013N04LM6ATMA1 Infineon-IQE013N04LM6-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a01735298bd175b06
IQE013N04LM6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 31A/205A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 51µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+82.8 грн
Мінімальне замовлення: 5000
BSC0402NSATMA1 Infineon-BSC0402NS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae6017015d4682a2212
BSC0402NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 80A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 40A, 10
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 107µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 75 V
товар відсутній
IPDD60R170CFD7XTMA1 Infineon-IPDD60R170CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c2e907f42b4
IPDD60R170CFD7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 19A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.9A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1016 pF @ 400 V
товар відсутній
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