Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (137832) > Сторінка 328 з 2298
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IM393S6FXKLA1 | Infineon Technologies |
 Description: POWER MODULE 600V 6A MDIP22Packaging: Tube Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2000Vrms Part Status: Obsolete Current: 6 A Voltage: 600 V |
товар відсутній |
|||||||||||||||||
 |
IM393L6EXKLA1 | Infineon Technologies |
Description: POWER MODULE 600V 15A MDIP30 Packaging: Tube Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2000Vrms Part Status: Obsolete Current: 15 A Voltage: 600 V |
товар відсутній |
|||||||||||||||||
| IM393L6E3XKLA1 | Infineon Technologies |
Description: POWER MODULE 600V 15A MDIP30 Packaging: Tube Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2000Vrms Part Status: Obsolete Current: 15 A Voltage: 600 V |
товар відсутній |
||||||||||||||||||
|
|
IM393M6EXKLA1 | Infineon Technologies |
Description: POWER MODULE 600V 10A MDIP30 Packaging: Tube Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2000Vrms Part Status: Obsolete Current: 10 A Voltage: 600 V |
товар відсутній |
|||||||||||||||||
 |
IM393M6E2XKLA1 | Infineon Technologies |
Description: POWER MODULE 600V 10A MDIP30 Packaging: Tube Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2000Vrms Part Status: Obsolete Current: 10 A Voltage: 600 V |
товар відсутній |
|||||||||||||||||
|
|
IM393M6E3XKLA1 | Infineon Technologies |
Description: POWER MODULE 600V 10A MDIP30 Packaging: Tube Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2000Vrms Part Status: Obsolete Current: 10 A Voltage: 600 V |
товар відсутній |
|||||||||||||||||
|
|
IM393S6E2XKLA1 | Infineon Technologies |
Description: POWER MODULE 600V 6A MDIP30 Packaging: Tube Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2000Vrms Part Status: Obsolete Current: 6 A Voltage: 600 V |
товар відсутній |
|||||||||||||||||
|
|
IM393X6EXKLA1 | Infineon Technologies |
Description: POWER MODULE 600V 20A MDIP30 Packaging: Tube Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2000Vrms Part Status: Obsolete Current: 20 A Voltage: 600 V |
товар відсутній |
|||||||||||||||||
| EVALM1IM231TOBO1 | Infineon Technologies |
Description: EVAL IM231 CIPOS MICRO IPM |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||||
 |
EVALSHNBV01DPS422TOBO1 | Infineon Technologies |
Description: EVAL DPS422 BAROMETRIC HUB Packaging: Bulk Interface: RF Sensor Type: Pressure Utilized IC / Part: DPS422, XMC1100 Supplied Contents: Board(s) Embedded: Yes, MCU, 32-Bit |
товар відсутній |
|||||||||||||||||
 |
S2GOPRESSUREDPS422TOBO1 | Infineon Technologies |
Description: EVAL DPS422 BAROMETRIC Packaging: Bulk Function: Barometer Type: Sensor Contents: Board(s) Utilized IC / Part: DPS422 Platform: Shield2Go |
товар відсутній |
|||||||||||||||||
 |
TLF50211ELXUMA2 | Infineon Technologies |
Description: IC REG BUCK 5V 500MA 14SSOP Packaging: Cut Tape (CT) Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 500mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Frequency - Switching: 2.25MHz Voltage - Input (Max): 45V Topology: Buck Supplier Device Package: PG-SSOP-14-3 Synchronous Rectifier: No Voltage - Input (Min): 4.75V Voltage - Output (Min/Fixed): 5V Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 3995 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
AUIR3241SDEMOBOARDTOBO1 | Infineon Technologies |
Description: EVAL AUIR3241S GATE DRIVER Packaging: Bulk Function: Gate Driver Type: Power Management Utilized IC / Part: AUIR3241S Supplied Contents: Board(s) Part Status: Obsolete |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| 28576411 B | Infineon Technologies |
Description: IC NOR 24FBGA Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
товар відсутній |
||||||||||||||||||
| FM24W256-EGTR | Infineon Technologies |
Description: IC F-RAM 256KBIT 8SOIC Packaging: Tape & Reel (TR) Part Status: Obsolete DigiKey Programmable: Not Verified |
товар відсутній |
||||||||||||||||||
| FM24W256-EG | Infineon Technologies |
Description: IC F-RAM 256KBIT 8SOIC Packaging: Tray Part Status: Obsolete DigiKey Programmable: Not Verified |
товар відсутній |
||||||||||||||||||
| MB88386PMC-GS-TLE1 | Infineon Technologies |
Description: IC AUTO MCU 80LQFP Packaging: Tray Part Status: Obsolete |
товар відсутній |
||||||||||||||||||
 |
IKB20N60TATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 40A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 41 ns Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A Supplier Device Package: PG-TO263-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/199ns Switching Energy: 770µJ Test Condition: 400V, 20A, 12Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 166 W |
на замовлення 8140 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
IRS2093MTRPBF | Infineon Technologies |
Description: IC AMP CLASS D QUAD 48MLPQ Packaging: Cut Tape (CT) Features: Depop, Short-Circuit Protection, Shutdown Package / Case: 48-VFQFN Exposed Pad Output Type: 4-Channel (Quad) Mounting Type: Surface Mount Type: Class D Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 15V Supplier Device Package: PG-VQFN-48 Part Status: Active |
на замовлення 2980 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
EVAL12W3PHSMP7TOBO1 | Infineon Technologies |
Description: EVAL 12W 950V COOLMOS Packaging: Bulk Voltage - Output: 12V Voltage - Input: 185 ~ 460 VAC Current - Output: 1A Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: ICE5QSAG, IPD95R1K2P7 Supplied Contents: Board(s) Main Purpose: AC/DC, Primary Side Outputs and Type: 1, Isolated Part Status: Active Power - Output: 12 W |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
TPM7012XENONBOARDTOBO1 | Infineon Technologies |
Description: EVAL TPM SLB9670 XENON Packaging: Bulk Function: Trusted Platform Module (TPM) Type: Interface Contents: Board(s) Part Status: Obsolete |
товар відсутній |
|||||||||||||||||
 |
DPS368XTSA1 | Infineon Technologies |
Description: SENSOR 17.4PSIG 24BIT 8VLGA Features: Temperature Compensated Packaging: Tape & Reel (TR) Package / Case: 8-VFLGA Output Type: I2C, SPI Mounting Type: Surface Mount Output: 24 b Operating Pressure: 4.35PSI ~ 17.4PSI (30kPa ~ 120kPa) Pressure Type: Vented Gauge Accuracy: ±0.5°C Operating Temperature: -40°C ~ 85°C Termination Style: SMD (SMT) Tab Voltage - Supply: 1.7V ~ 3.6V Applications: Board Mount Supplier Device Package: PG-VLGA-8-1 Port Style: No Port Maximum Pressure: 145PSI (999.74kPa) Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
EVALSHNBV01DPS368TOBO1 | Infineon Technologies |
Description: SENSOR HUB NANO DPS368 Packaging: Bulk Interface: I2C, Serial, SPI Voltage - Supply: 1.7V ~ 3.6V Sensor Type: Pressure Utilized IC / Part: DPS368 Supplied Contents: Board(s) Sensing Range: 300 ~ 1200 hPa Part Status: Active |
товар відсутній |
|||||||||||||||||
| IPB12CN10NGATMA2 | Infineon Technologies |
Description: MOSFET N-CH 100V 67A TO263-3 Packaging: Tape & Reel (TR) Part Status: Obsolete |
товар відсутній |
||||||||||||||||||
| IRF3717TRPBF-1 | Infineon Technologies |
Description: MOSFET N-CH 20V 20A 8-SOIC |
товар відсутній |
||||||||||||||||||
 |
IRF7331TRPBF-1 | Infineon Technologies |
Description: MOSFET 2N-CH 20V 7A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-SOIC |
товар відсутній |
|||||||||||||||||
|
|
IRF7904TRPBF-1 | Infineon Technologies |
Description: MOSFET 2N-CH 30V 7.6A/11A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W, 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V Rds On (Max) @ Id, Vgs: 16.2mOhm @ 7.6A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.25V @ 25µA Supplier Device Package: 8-SO Part Status: Obsolete |
товар відсутній |
|||||||||||||||||
| IRFC048N | Infineon Technologies |
Description: MOSFET N-CH Packaging: Bulk Part Status: Obsolete |
товар відсутній |
||||||||||||||||||
| IRFC048NB | Infineon Technologies | Description: MOSFET N-CH |
товар відсутній |
||||||||||||||||||
 |
BTS500101TADATMA2 | Infineon Technologies |
Description: IC PWR HIC-PROFET N-CH 1:1 TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 1.6mOhm Input Type: Non-Inverting Voltage - Load: 8V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 48A Ratio - Input:Output: 1:1 Supplier Device Package: P/PG-TO-263-7-10 Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2034 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
S25FL064P0XBHI023 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 24BGA |
товар відсутній |
|||||||||||||||||
 |
S25FL132K0XMFN013 | Infineon Technologies |
Description: IC FLASH 32MBIT SPI/QUAD 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Part Status: Obsolete Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Not Verified |
товар відсутній |
|||||||||||||||||
 |
S25FL032P0XBHI033 | Infineon Technologies |
Description: IC FLASH 32MBIT SPI/QUAD 24BGA Packaging: Cut Tape (CT) Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (6x8) Part Status: Obsolete Write Cycle Time - Word, Page: 5µs, 3ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Not Verified |
на замовлення 2437 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
IPB90R340C3ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 900V 15A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
IPB90R340C3ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 900V 15A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V |
на замовлення 1824 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
IPI90R1K2C3XKSA2 | Infineon Technologies |
Description: MOSFET N-CH 900V 5.1A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 310µA Supplier Device Package: PG-TO262-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V |
товар відсутній |
|||||||||||||||||
 |
BFS 17P E8211 | Infineon Technologies |
Description: RF TRANS NPN SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 280mW Current - Collector (Ic) (Max): 25mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): 3.5dB @ 800MHz Supplier Device Package: PG-SOT23 Part Status: Active |
товар відсутній |
|||||||||||||||||
 |
BFS17PE6752HTSA1 | Infineon Technologies |
Description: RF TRANS NPN SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 280mW Current - Collector (Ic) (Max): 25mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): 3.5dB @ 800MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy |
товар відсутній |
|||||||||||||||||
 |
BFS17WH6393XTSA1 | Infineon Technologies |
Description: RF TRANS NPN SOT323-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 280mW Current - Collector (Ic) (Max): 25mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): 3.5dB @ 800MHz Supplier Device Package: PG-SOT323 Part Status: Active |
товар відсутній |
|||||||||||||||||
 |
FD450R12KE4PHOSA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 450A AG62MM-1 |
на замовлення 56 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
REFAUDIOAMA12040TOBO1 | Infineon Technologies |
Description: EVAL MA12040 CLASS D AMP Packaging: Bulk Output Type: 2-Channel (Stereo) Amplifier Type: Class D Voltage - Supply: 5V ~ 18V Max Output Power x Channels @ Load: 40W x 2 @ 4Ohm Board Type: Fully Populated Utilized IC / Part: MA12040 Supplied Contents: Board(s) |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
REFAUDIODMA12040PTOBO1 | Infineon Technologies |
Description: EVAL MA12040P CLASS D AMP Packaging: Bulk Output Type: 2-Channel (Stereo) Amplifier Type: Class D Voltage - Supply: 5V ~ 18V Max Output Power x Channels @ Load: 40W x 2 @ 4Ohm Board Type: Fully Populated Utilized IC / Part: MA12040P Supplied Contents: Board(s) |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
IPB156N22NFDATMA1 | Infineon Technologies |
Description: MOSFET N-CH 220V 72A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 15.6mOhm @ 50A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 220 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 110 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 110 |
на замовлення 1036 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
IPT029N08N5ATMA1 | Infineon Technologies |
Description: POWER TRANSISTOR 80V OPTIMOS-5 |
товар відсутній |
|||||||||||||||||
 |
KITLGPWRBOM004TOBO1 | Infineon Technologies |
Description: EVAL POWER BOARD 60V Packaging: Box Function: Half H-Bridge Driver (Internal FET) Type: Power Management Supplied Contents: Board(s) Part Status: Active |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
KITLGPWRBOM005TOBO1 | Infineon Technologies |
Description: EVAL POWER BOARD 100V |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
|||||||||||||||||
 |
KITLGPWRBOM006TOBO1 | Infineon Technologies |
Description: EVAL POWER BOARD 150V |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
|||||||||||||||||
 |
KITLGPWRBOM007TOBO1 | Infineon Technologies |
Description: EVAL POWER BOARD 200V Packaging: Box Function: Half H-Bridge Driver (Internal FET) Type: Power Management Supplied Contents: Board(s) Part Status: Active |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
KITLGPWRBOM008TOBO1 | Infineon Technologies |
Description: EVAL POWER BOARD 250V |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
|||||||||||||||||
| SIPC10N65C3X1SA2 | Infineon Technologies |
Description: MOSFET Packaging: Bulk Part Status: Active |
товар відсутній |
||||||||||||||||||
| SIPC10N65C3X1SA1 | Infineon Technologies |
Description: MOSFET Packaging: Bulk Part Status: Obsolete |
товар відсутній |
||||||||||||||||||
| FF1000R17IE4S4BOSA2 | Infineon Technologies |
Description: IGBT MOD 1700V 1390A AGPRIME3-1 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A NTC Thermistor: Yes Supplier Device Package: AG-PRIME3-1 Current - Collector (Ic) (Max): 1390 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 6250 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 81 pF @ 25 V |
товар відсутній |
||||||||||||||||||
| FM24C04B-G2TR | Infineon Technologies |
Description: IC FRAM 4KBIT I2C 1MHZ 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 1 MHz Memory Format: FRAM Supplier Device Package: 8-SOIC Part Status: Obsolete Memory Interface: I²C Access Time: 550 ns Memory Organization: 512 x 8 DigiKey Programmable: Not Verified |
товар відсутній |
||||||||||||||||||
 |
IMW120R220M1HXKSA1 | Infineon Technologies |
Description: SICFET N-CH 1.2KV 13A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 286mOhm @ 4A, 18V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 1.6mA Supplier Device Package: PG-TO247-3-41 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 800 V |
на замовлення 1255 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
IMW120R350M1HXKSA1 | Infineon Technologies |
Description: SICFET N-CH 1.2KV 4.7A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 455mOhm @ 2A, 18V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 1mA Supplier Device Package: PG-TO247-3-41 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 800 V |
на замовлення 1363 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
IMZ120R140M1HXKSA1 | Infineon Technologies |
Description: SICFET N-CH 1.2KV 19A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 182mOhm @ 6A, 18V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 2.5mA Supplier Device Package: PG-TO247-4-1 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 800 V |
на замовлення 235 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
IMZ120R220M1HXKSA1 | Infineon Technologies |
Description: SICFET N-CH 1.2KV 13A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 4A, 18V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 1.6mA Supplier Device Package: PG-TO247-4-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 800 V |
на замовлення 379 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
IMZ120R350M1HXKSA1 | Infineon Technologies |
Description: SICFET N-CH 1.2KV 4.7A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 2A, 18V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 1mA Supplier Device Package: PG-TO247-4-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 800 V |
на замовлення 260 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
TLE5109A16DE2210XUMA1 | Infineon Technologies |
Description: IC ANGLE SENSOR 5.0 V Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Analog Voltage Termination Style: Gull Wing Voltage - Supply: 5V Linearity: ±0.1° Actuator Type: External Magnet, Not Included Technology: Magnetoresistive For Measuring: Angle Supplier Device Package: PG-TDSO-16-2 Rotation Angle - Electrical, Mechanical: 0° ~ 180° Output Signal: Cosine, Sine Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
товар відсутній |
|||||||||||||||||
 |
IAUA200N04S5N010AUMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 200A 5HSOF Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 100µA Supplier Device Package: PG-HSOF-5-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4044 шт: термін постачання 21-31 дні (днів) |
|
| IM393S6FXKLA1 |
|
Виробник: Infineon Technologies
Description: POWER MODULE 600V 6A MDIP22
Packaging: Tube
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 6 A
Voltage: 600 V
Description: POWER MODULE 600V 6A MDIP22
Packaging: Tube
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 6 A
Voltage: 600 V
товар відсутній
| IM393L6EXKLA1 |
|
Виробник: Infineon Technologies
Description: POWER MODULE 600V 15A MDIP30
Packaging: Tube
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 15 A
Voltage: 600 V
Description: POWER MODULE 600V 15A MDIP30
Packaging: Tube
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 15 A
Voltage: 600 V
товар відсутній
| IM393L6E3XKLA1 |
|
Виробник: Infineon Technologies
Description: POWER MODULE 600V 15A MDIP30
Packaging: Tube
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 15 A
Voltage: 600 V
Description: POWER MODULE 600V 15A MDIP30
Packaging: Tube
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 15 A
Voltage: 600 V
товар відсутній
| IM393M6EXKLA1 |
|
Виробник: Infineon Technologies
Description: POWER MODULE 600V 10A MDIP30
Packaging: Tube
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
Description: POWER MODULE 600V 10A MDIP30
Packaging: Tube
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
товар відсутній
| IM393M6E2XKLA1 |
|
Виробник: Infineon Technologies
Description: POWER MODULE 600V 10A MDIP30
Packaging: Tube
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
Description: POWER MODULE 600V 10A MDIP30
Packaging: Tube
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
товар відсутній
| IM393M6E3XKLA1 |
|
Виробник: Infineon Technologies
Description: POWER MODULE 600V 10A MDIP30
Packaging: Tube
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
Description: POWER MODULE 600V 10A MDIP30
Packaging: Tube
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
товар відсутній
| IM393S6E2XKLA1 |
|
Виробник: Infineon Technologies
Description: POWER MODULE 600V 6A MDIP30
Packaging: Tube
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 6 A
Voltage: 600 V
Description: POWER MODULE 600V 6A MDIP30
Packaging: Tube
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 6 A
Voltage: 600 V
товар відсутній
| IM393X6EXKLA1 |
|
Виробник: Infineon Technologies
Description: POWER MODULE 600V 20A MDIP30
Packaging: Tube
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
Description: POWER MODULE 600V 20A MDIP30
Packaging: Tube
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
товар відсутній
| EVALM1IM231TOBO1 |
|
Виробник: Infineon Technologies
Description: EVAL IM231 CIPOS MICRO IPM
Description: EVAL IM231 CIPOS MICRO IPM
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| EVALSHNBV01DPS422TOBO1 |
|
Виробник: Infineon Technologies
Description: EVAL DPS422 BAROMETRIC HUB
Packaging: Bulk
Interface: RF
Sensor Type: Pressure
Utilized IC / Part: DPS422, XMC1100
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Description: EVAL DPS422 BAROMETRIC HUB
Packaging: Bulk
Interface: RF
Sensor Type: Pressure
Utilized IC / Part: DPS422, XMC1100
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
товар відсутній
| S2GOPRESSUREDPS422TOBO1 |
Виробник: Infineon Technologies
Description: EVAL DPS422 BAROMETRIC
Packaging: Bulk
Function: Barometer
Type: Sensor
Contents: Board(s)
Utilized IC / Part: DPS422
Platform: Shield2Go
Description: EVAL DPS422 BAROMETRIC
Packaging: Bulk
Function: Barometer
Type: Sensor
Contents: Board(s)
Utilized IC / Part: DPS422
Platform: Shield2Go
товар відсутній
| TLF50211ELXUMA2 |
|
Виробник: Infineon Technologies
Description: IC REG BUCK 5V 500MA 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.25MHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-SSOP-14-3
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC REG BUCK 5V 500MA 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.25MHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-SSOP-14-3
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 3995 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 191.6 грн |
| 10+ | 166.05 грн |
| 25+ | 156.62 грн |
| 100+ | 125.21 грн |
| 250+ | 117.57 грн |
| 500+ | 102.88 грн |
| 1000+ | 83.84 грн |
| AUIR3241SDEMOBOARDTOBO1 |
|
Виробник: Infineon Technologies
Description: EVAL AUIR3241S GATE DRIVER
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: AUIR3241S
Supplied Contents: Board(s)
Part Status: Obsolete
Description: EVAL AUIR3241S GATE DRIVER
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: AUIR3241S
Supplied Contents: Board(s)
Part Status: Obsolete
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6558.37 грн |
| 28576411 B |
Виробник: Infineon Technologies
Description: IC NOR 24FBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: IC NOR 24FBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
товар відсутній
| FM24W256-EGTR |
|
Виробник: Infineon Technologies
Description: IC F-RAM 256KBIT 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC F-RAM 256KBIT 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
| FM24W256-EG |
|
Виробник: Infineon Technologies
Description: IC F-RAM 256KBIT 8SOIC
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC F-RAM 256KBIT 8SOIC
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
| MB88386PMC-GS-TLE1 |
товар відсутній
| IKB20N60TATMA1 |
|
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 40A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 770µJ
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 166 W
Description: IGBT TRENCH FS 600V 40A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 770µJ
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 166 W
на замовлення 8140 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 205.28 грн |
| 10+ | 164.22 грн |
| 100+ | 130.71 грн |
| 500+ | 103.79 грн |
| IRS2093MTRPBF |
|
Виробник: Infineon Technologies
Description: IC AMP CLASS D QUAD 48MLPQ
Packaging: Cut Tape (CT)
Features: Depop, Short-Circuit Protection, Shutdown
Package / Case: 48-VFQFN Exposed Pad
Output Type: 4-Channel (Quad)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 15V
Supplier Device Package: PG-VQFN-48
Part Status: Active
Description: IC AMP CLASS D QUAD 48MLPQ
Packaging: Cut Tape (CT)
Features: Depop, Short-Circuit Protection, Shutdown
Package / Case: 48-VFQFN Exposed Pad
Output Type: 4-Channel (Quad)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 15V
Supplier Device Package: PG-VQFN-48
Part Status: Active
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 499.52 грн |
| 10+ | 434.53 грн |
| 25+ | 414.3 грн |
| 100+ | 337.59 грн |
| 250+ | 322.43 грн |
| 500+ | 293.98 грн |
| 1000+ | 251.85 грн |
| EVAL12W3PHSMP7TOBO1 |
|
Виробник: Infineon Technologies
Description: EVAL 12W 950V COOLMOS
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 185 ~ 460 VAC
Current - Output: 1A
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5QSAG, IPD95R1K2P7
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1, Isolated
Part Status: Active
Power - Output: 12 W
Description: EVAL 12W 950V COOLMOS
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 185 ~ 460 VAC
Current - Output: 1A
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5QSAG, IPD95R1K2P7
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1, Isolated
Part Status: Active
Power - Output: 12 W
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 10575.8 грн |
| TPM7012XENONBOARDTOBO1 |
|
Виробник: Infineon Technologies
Description: EVAL TPM SLB9670 XENON
Packaging: Bulk
Function: Trusted Platform Module (TPM)
Type: Interface
Contents: Board(s)
Part Status: Obsolete
Description: EVAL TPM SLB9670 XENON
Packaging: Bulk
Function: Trusted Platform Module (TPM)
Type: Interface
Contents: Board(s)
Part Status: Obsolete
товар відсутній
| DPS368XTSA1 |
|
Виробник: Infineon Technologies
Description: SENSOR 17.4PSIG 24BIT 8VLGA
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 8-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Output: 24 b
Operating Pressure: 4.35PSI ~ 17.4PSI (30kPa ~ 120kPa)
Pressure Type: Vented Gauge
Accuracy: ±0.5°C
Operating Temperature: -40°C ~ 85°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 1.7V ~ 3.6V
Applications: Board Mount
Supplier Device Package: PG-VLGA-8-1
Port Style: No Port
Maximum Pressure: 145PSI (999.74kPa)
Part Status: Active
Description: SENSOR 17.4PSIG 24BIT 8VLGA
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 8-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Output: 24 b
Operating Pressure: 4.35PSI ~ 17.4PSI (30kPa ~ 120kPa)
Pressure Type: Vented Gauge
Accuracy: ±0.5°C
Operating Temperature: -40°C ~ 85°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 1.7V ~ 3.6V
Applications: Board Mount
Supplier Device Package: PG-VLGA-8-1
Port Style: No Port
Maximum Pressure: 145PSI (999.74kPa)
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 103.85 грн |
| EVALSHNBV01DPS368TOBO1 |
|
Виробник: Infineon Technologies
Description: SENSOR HUB NANO DPS368
Packaging: Bulk
Interface: I2C, Serial, SPI
Voltage - Supply: 1.7V ~ 3.6V
Sensor Type: Pressure
Utilized IC / Part: DPS368
Supplied Contents: Board(s)
Sensing Range: 300 ~ 1200 hPa
Part Status: Active
Description: SENSOR HUB NANO DPS368
Packaging: Bulk
Interface: I2C, Serial, SPI
Voltage - Supply: 1.7V ~ 3.6V
Sensor Type: Pressure
Utilized IC / Part: DPS368
Supplied Contents: Board(s)
Sensing Range: 300 ~ 1200 hPa
Part Status: Active
товар відсутній
| IPB12CN10NGATMA2 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 67A TO263-3
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: MOSFET N-CH 100V 67A TO263-3
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товар відсутній
| IRF3717TRPBF-1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 20A 8-SOIC
Description: MOSFET N-CH 20V 20A 8-SOIC
товар відсутній
| IRF7331TRPBF-1 |
|
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 20V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V
Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 20V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V
Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOIC
товар відсутній
| IRF7904TRPBF-1 |
|
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 7.6A/11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W, 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 7.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Description: MOSFET 2N-CH 30V 7.6A/11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W, 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 7.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
товар відсутній
| IRFC048N |
товар відсутній
| BTS500101TADATMA2 |
|
Виробник: Infineon Technologies
Description: IC PWR HIC-PROFET N-CH 1:1 TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.6mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 48A
Ratio - Input:Output: 1:1
Supplier Device Package: P/PG-TO-263-7-10
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR HIC-PROFET N-CH 1:1 TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.6mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 48A
Ratio - Input:Output: 1:1
Supplier Device Package: P/PG-TO-263-7-10
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2034 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 445.54 грн |
| 10+ | 387.45 грн |
| 25+ | 369.44 грн |
| 100+ | 301.04 грн |
| 250+ | 287.51 грн |
| 500+ | 262.14 грн |
| S25FL064P0XBHI023 |
|
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
товар відсутній
| S25FL132K0XMFN013 |
|
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 32MBIT SPI/QUAD 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
товар відсутній
| S25FL032P0XBHI033 |
|
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 32MBIT SPI/QUAD 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
на замовлення 2437 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 85.91 грн |
| 10+ | 74.97 грн |
| 25+ | 72.92 грн |
| 50+ | 68.08 грн |
| 100+ | 60.85 грн |
| 250+ | 60.68 грн |
| 500+ | 58.78 грн |
| 1000+ | 56.29 грн |
| IPB90R340C3ATMA2 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 900V 15A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Description: MOSFET N-CH 900V 15A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 210.16 грн |
| IPB90R340C3ATMA2 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 900V 15A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Description: MOSFET N-CH 900V 15A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
на замовлення 1824 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 406.76 грн |
| 10+ | 328.73 грн |
| 100+ | 265.9 грн |
| 500+ | 221.81 грн |
| IPI90R1K2C3XKSA2 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 900V 5.1A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Description: MOSFET N-CH 900V 5.1A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
товар відсутній
| BFS 17P E8211 |
Виробник: Infineon Technologies
Description: RF TRANS NPN SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Description: RF TRANS NPN SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
Supplier Device Package: PG-SOT23
Part Status: Active
товар відсутній
| BFS17PE6752HTSA1 |
Виробник: Infineon Technologies
Description: RF TRANS NPN SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Description: RF TRANS NPN SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
товар відсутній
| BFS17WH6393XTSA1 |
Виробник: Infineon Technologies
Description: RF TRANS NPN SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
Supplier Device Package: PG-SOT323
Part Status: Active
Description: RF TRANS NPN SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
Supplier Device Package: PG-SOT323
Part Status: Active
товар відсутній
| FD450R12KE4PHOSA1 |
|
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 450A AG62MM-1
Description: IGBT MODULE 1200V 450A AG62MM-1
на замовлення 56 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 15211.37 грн |
| REFAUDIOAMA12040TOBO1 |
|
Виробник: Infineon Technologies
Description: EVAL MA12040 CLASS D AMP
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: 5V ~ 18V
Max Output Power x Channels @ Load: 40W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: MA12040
Supplied Contents: Board(s)
Description: EVAL MA12040 CLASS D AMP
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: 5V ~ 18V
Max Output Power x Channels @ Load: 40W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: MA12040
Supplied Contents: Board(s)
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4109.43 грн |
| REFAUDIODMA12040PTOBO1 |
|
Виробник: Infineon Technologies
Description: EVAL MA12040P CLASS D AMP
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: 5V ~ 18V
Max Output Power x Channels @ Load: 40W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: MA12040P
Supplied Contents: Board(s)
Description: EVAL MA12040P CLASS D AMP
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: 5V ~ 18V
Max Output Power x Channels @ Load: 40W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: MA12040P
Supplied Contents: Board(s)
на замовлення 4 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4110.95 грн |
| IPB156N22NFDATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 220V 72A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 220 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 110 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 110
Description: MOSFET N-CH 220V 72A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 220 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 110 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 110
на замовлення 1036 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 495.72 грн |
| 10+ | 409.19 грн |
| 100+ | 341.04 грн |
| 500+ | 282.4 грн |
| IPT029N08N5ATMA1 |
|
Виробник: Infineon Technologies
Description: POWER TRANSISTOR 80V OPTIMOS-5
Description: POWER TRANSISTOR 80V OPTIMOS-5
товар відсутній
| KITLGPWRBOM004TOBO1 |
|
Виробник: Infineon Technologies
Description: EVAL POWER BOARD 60V
Packaging: Box
Function: Half H-Bridge Driver (Internal FET)
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
Description: EVAL POWER BOARD 60V
Packaging: Box
Function: Half H-Bridge Driver (Internal FET)
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
на замовлення 6 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3648.69 грн |
| KITLGPWRBOM005TOBO1 |
|
Виробник: Infineon Technologies
Description: EVAL POWER BOARD 100V
Description: EVAL POWER BOARD 100V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| KITLGPWRBOM006TOBO1 |
|
Виробник: Infineon Technologies
Description: EVAL POWER BOARD 150V
Description: EVAL POWER BOARD 150V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| KITLGPWRBOM007TOBO1 |
|
Виробник: Infineon Technologies
Description: EVAL POWER BOARD 200V
Packaging: Box
Function: Half H-Bridge Driver (Internal FET)
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
Description: EVAL POWER BOARD 200V
Packaging: Box
Function: Half H-Bridge Driver (Internal FET)
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5108.47 грн |
| KITLGPWRBOM008TOBO1 |
|
Виробник: Infineon Technologies
Description: EVAL POWER BOARD 250V
Description: EVAL POWER BOARD 250V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| SIPC10N65C3X1SA2 |
товар відсутній
| SIPC10N65C3X1SA1 |
товар відсутній
| FF1000R17IE4S4BOSA2 |
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 1390A AGPRIME3-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3-1
Current - Collector (Ic) (Max): 1390 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 pF @ 25 V
Description: IGBT MOD 1700V 1390A AGPRIME3-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3-1
Current - Collector (Ic) (Max): 1390 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 pF @ 25 V
товар відсутній
| FM24C04B-G2TR |
Виробник: Infineon Technologies
Description: IC FRAM 4KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: I²C
Access Time: 550 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 4KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: I²C
Access Time: 550 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
товар відсутній
| IMW120R220M1HXKSA1 |
|
Виробник: Infineon Technologies
Description: SICFET N-CH 1.2KV 13A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 286mOhm @ 4A, 18V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 800 V
Description: SICFET N-CH 1.2KV 13A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 286mOhm @ 4A, 18V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 800 V
на замовлення 1255 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 473.67 грн |
| 30+ | 364.07 грн |
| 120+ | 325.75 грн |
| 510+ | 269.74 грн |
| 1020+ | 242.77 грн |
| IMW120R350M1HXKSA1 |
|
Виробник: Infineon Technologies
Description: SICFET N-CH 1.2KV 4.7A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 2A, 18V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 800 V
Description: SICFET N-CH 1.2KV 4.7A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 2A, 18V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 800 V
на замовлення 1363 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 307.16 грн |
| 30+ | 236.36 грн |
| 120+ | 219.02 грн |
| IMZ120R140M1HXKSA1 |
|
Виробник: Infineon Technologies
Description: SICFET N-CH 1.2KV 19A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 6A, 18V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Supplier Device Package: PG-TO247-4-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 800 V
Description: SICFET N-CH 1.2KV 19A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 6A, 18V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Supplier Device Package: PG-TO247-4-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 800 V
на замовлення 235 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 748.14 грн |
| 10+ | 634.18 грн |
| 100+ | 548.48 грн |
| IMZ120R220M1HXKSA1 |
|
Виробник: Infineon Technologies
Description: SICFET N-CH 1.2KV 13A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 4A, 18V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
Supplier Device Package: PG-TO247-4-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 800 V
Description: SICFET N-CH 1.2KV 13A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 4A, 18V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
Supplier Device Package: PG-TO247-4-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 800 V
на замовлення 379 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 748.14 грн |
| 10+ | 617.86 грн |
| 100+ | 514.9 грн |
| IMZ120R350M1HXKSA1 |
|
Виробник: Infineon Technologies
Description: SICFET N-CH 1.2KV 4.7A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 2A, 18V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1mA
Supplier Device Package: PG-TO247-4-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 800 V
Description: SICFET N-CH 1.2KV 4.7A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 2A, 18V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1mA
Supplier Device Package: PG-TO247-4-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 800 V
на замовлення 260 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 648.54 грн |
| 10+ | 535.64 грн |
| 100+ | 446.42 грн |
| TLE5109A16DE2210XUMA1 |
|
Виробник: Infineon Technologies
Description: IC ANGLE SENSOR 5.0 V
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Termination Style: Gull Wing
Voltage - Supply: 5V
Linearity: ±0.1°
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-2
Rotation Angle - Electrical, Mechanical: 0° ~ 180°
Output Signal: Cosine, Sine
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC ANGLE SENSOR 5.0 V
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Termination Style: Gull Wing
Voltage - Supply: 5V
Linearity: ±0.1°
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-2
Rotation Angle - Electrical, Mechanical: 0° ~ 180°
Output Signal: Cosine, Sine
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
товар відсутній
| IAUA200N04S5N010AUMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 200A 5HSOF
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 100µA
Supplier Device Package: PG-HSOF-5-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 200A 5HSOF
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 100µA
Supplier Device Package: PG-HSOF-5-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4044 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 183.23 грн |
| 10+ | 146.58 грн |
| 100+ | 116.64 грн |
| 500+ | 92.62 грн |
| 1000+ | 78.59 грн |