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TLD2326ELXUMA1 TLD2326ELXUMA1 Infineon Technologies Infineon-TLD2326EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e53c6bc3ad2 Description: IC LED DRVR LINEAR 120MA 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
товар відсутній
ESD144B1W0201E6327XTSA1 ESD144B1W0201E6327XTSA1 Infineon Technologies Infineon-New+generation+ESD+protection+diodes-PB-v01_00-EN.pdf?fileId=5546d4625cc9456a015d0ccb7b9a57e3 Description: TVS DIODE 18VWM 20VC WLL-2-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 18.5V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 21W
Power Line Protection: Yes
Part Status: Active
на замовлення 150000 шт:
термін постачання 21-31 дні (днів)
15000+1.75 грн
Мінімальне замовлення: 15000
BSS816NWH6327XTSA1 BSS816NWH6327XTSA1 Infineon Technologies Infineon-BSS816NW-DS-v02_03-en.pdf?fileId=db3a304335113a6301351e704a2e1332 Description: MOSFET N-CH 20V 1.4A SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 2.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 750mV @ 3.7µA
Supplier Device Package: PG-SOT323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
на замовлення 115497 шт:
термін постачання 21-31 дні (днів)
12+25.85 грн
17+ 17.28 грн
100+ 8.73 грн
500+ 6.69 грн
1000+ 4.96 грн
Мінімальне замовлення: 12
BTS409L1E3062ABUMA1 BTS409L1E3062ABUMA1 Infineon Technologies Infineon-BTS409L1%20E3062A-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9b0a1b7361a Description: IC PWR SWITCH N-CHAN 1:1 TO263-5
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Not For New Designs
на замовлення 948 шт:
термін постачання 21-31 дні (днів)
2+234.17 грн
10+ 202.66 грн
25+ 191.59 грн
100+ 155.82 грн
250+ 147.83 грн
500+ 132.65 грн
Мінімальне замовлення: 2
AUIRS2092STR AUIRS2092STR Infineon Technologies auirs2092s.pdf?fileId=5546d462533600a4015355bf314b15a3 Description: IC AMP CLASS D MONO 16SOIC
Packaging: Cut Tape (CT)
Features: Depop
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Supplier Device Package: 16-SOIC
Part Status: Obsolete
товар відсутній
BTS410F2E3062ABUMA1 BTS410F2E3062ABUMA1 Infineon Technologies Infineon-BTS410F2+E3062A-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9b094463616 Description: IC PWR SWITCH N-CHAN 1:1 TO263-5
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 190mOhm
Input Type: Non-Inverting
Voltage - Load: 4.7V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
товар відсутній
BAT5403WE6327HTSA1 BAT5403WE6327HTSA1 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTT 30V 200MA SOD323-2
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SOD323-3D
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 17607 шт:
термін постачання 21-31 дні (днів)
10+32.69 грн
13+ 22.55 грн
100+ 11.36 грн
500+ 9.45 грн
1000+ 7.36 грн
Мінімальне замовлення: 10
BAT5402VH6327XTSA1 BAT5402VH6327XTSA1 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 30V 200MA SC79-2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 138364 шт:
термін постачання 21-31 дні (днів)
13+23.57 грн
19+ 15.96 грн
100+ 8.05 грн
500+ 6.69 грн
1000+ 5.21 грн
Мінімальне замовлення: 13
IPD25N06S4L30ATMA2 IPD25N06S4L30ATMA2 Infineon Technologies Infineon-IPD25N06S4L_30-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038898f7b0caa Description: MOSFET N-CH 60V 25A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 8µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 14439 шт:
термін постачання 21-31 дні (днів)
5+72.99 грн
10+ 57.4 грн
100+ 44.66 грн
500+ 35.53 грн
1000+ 28.94 грн
Мінімальне замовлення: 5
IPB044N15N5ATMA1 IPB044N15N5ATMA1 Infineon Technologies Infineon-IPB044N15N5-DS-v02_00-EN.pdf?fileId=5546d462576f347501576ffd3e582757 Description: MOSFET N-CH 150V 174A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 87A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 264µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 75 V
на замовлення 1390 шт:
термін постачання 21-31 дні (днів)
1+447.82 грн
10+ 369.66 грн
100+ 308.05 грн
500+ 255.08 грн
IPN50R650CEATMA1 IPN50R650CEATMA1 Infineon Technologies Infineon-IPN50R650CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547adae9265ad8 Description: MOSFET N-CH 500V 9A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-SOT223-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
6+52.46 грн
Мінімальне замовлення: 6
BFR182WH6327XTSA1 BFR182WH6327XTSA1 Infineon Technologies bfr182w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114269d1e43064c Description: RF TRANS NPN 12V 8GHZ SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Active
на замовлення 24185 шт:
термін постачання 21-31 дні (днів)
13+25.09 грн
17+ 18.08 грн
25+ 15.87 грн
100+ 9.63 грн
250+ 7.97 грн
500+ 6.38 грн
1000+ 4.81 грн
Мінімальне замовлення: 13
BBY5802VH6327XTSA1 BBY5802VH6327XTSA1 Infineon Technologies bby58series.pdf?folderId=db3a304313d846880113ddc160d402c0&fileId=db3a304313d846880113de6d4a720386 Description: DIODE TUNING 10V 20MA SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 5.5pF @ 6V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.5
на замовлення 99454 шт:
термін постачання 21-31 дні (днів)
11+29.65 грн
13+ 24.01 грн
100+ 16.66 грн
500+ 12.21 грн
1000+ 9.92 грн
Мінімальне замовлення: 11
IPB048N15N5ATMA1 IPB048N15N5ATMA1 Infineon Technologies Infineon-IPB048N15N5-DS-v02_00-EN.pdf?fileId=5546d46253f650570154a01efd885463 Description: MOSFET N-CH 150V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 264µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 75 V
на замовлення 1842 шт:
термін постачання 21-31 дні (днів)
1+532.21 грн
10+ 439.58 грн
100+ 366.32 грн
500+ 303.34 грн
BBY5302VH6327XTSA1 BBY5302VH6327XTSA1 Infineon Technologies INFNS15715-1.pdf?t.download=true&u=5oefqw Description: DIODE TUNING 6V 20MA SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 3.1pF @ 3V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: PG-SC79-2
Part Status: Active
Voltage - Peak Reverse (Max): 6 V
Capacitance Ratio: 2.6
на замовлення 6678 шт:
термін постачання 21-31 дні (днів)
10+31.17 грн
12+ 25.26 грн
100+ 17.56 грн
500+ 12.86 грн
1000+ 10.45 грн
Мінімальне замовлення: 10
AUIPS7081RTRL AUIPS7081RTRL Infineon Technologies auips7081.pdf?fileId=5546d462533600a4015355a7b8d5131e Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 55mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
SPD04N60C3ATMA1 SPD04N60C3ATMA1 Infineon Technologies Infineon-SPD_U04N60C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f1a0318e31921 Description: MOSFET N-CH 600V 4.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2+176.39 грн
10+ 109.46 грн
100+ 75.03 грн
500+ 56.55 грн
1000+ 52.09 грн
Мінімальне замовлення: 2
EVALM1099MCTOBO1 EVALM1099MCTOBO1 Infineon Technologies EVAL-M1-099M-C_UM_Rev1.0_8-21-17.pdf Description: EV KIT IMOTION CNTRL BOARD
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IRMCK099M
Supplied Contents: Board(s)
Part Status: Active
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
1+3777.94 грн
MCETOOLV2 MCETOOLV2 Infineon Technologies Infineon-2017-01+MCETOOLV2+User+Manual-AN-v01_04-EN.pdf?fileId=5546d4625e5ce62d015e60ca0d9540d6 Description: IMOTION DEBUGGER
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
1+7606.82 грн
BTS550PE3146NKSA1 Infineon Technologies Description: IC PWR SWITCH N-CHAN 1:1 TO218-5
товар відсутній
T1851N70TOHXPSA1 Infineon Technologies Infineon-T1851N-DS-v06_00-en_de.pdf?fileId=db3a304412b407950112b43074f750d0 Description: SCR MODULE 7000V 2880A DO200AE
товар відсутній
T1851N60TOHXPSA1 Infineon Technologies T1851N_Rev6.0_05-02-11.pdf Description: SCR MODULE 7000V 2880A DO200AE
товар відсутній
T4051N85TOHXPSA1 Infineon Technologies Description: SCR MODULE T20235K-1-1
товар відсутній
T4161N80TOHPRXPSA1 Infineon Technologies Description: SCR MODULE T20235K-1-1
товар відсутній
T4301N22TOFXPSA1 Infineon Technologies Description: SCR MODULE 2900V 6330A DO200AE
товар відсутній
T901N32TOFXPSA1 Infineon Technologies T901N_7.0_05-02-11.pdf Description: SCR MODULE 3600V 29900A DO200AE
товар відсутній
IPP80N07S405AKSA1 IPP80N07S405AKSA1 Infineon Technologies Description: MOSFET N-CH TO220-3
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Part Status: Active
товар відсутній
IPI80N07S405AKSA1 Infineon Technologies IP(B,I,P)80N07S4-05_Rev1.0_07-14-14.pdf Description: MOSFET N-CH TO262-3
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Part Status: Obsolete
товар відсутній
AUXHMF1404ZSTRL Infineon Technologies Description: MOSFET N-CH TO263-3
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товар відсутній
BSP615S2LHUMA1 BSP615S2LHUMA1 Infineon Technologies Description: MOSFET SOT223-4
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товар відсутній
IPB80N07S405ATMA1 Infineon Technologies IP(B,I,P)80N07S4-05_Rev1.0_07-14-14.pdf Description: MOSFET N-CH TO263-3
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Part Status: Obsolete
товар відсутній
ITD50N04S4L04ATMA1 Infineon Technologies Description: MOSFET N-CH TO252-5
товар відсутній
CY8CLED01D01-56LTXQT CY8CLED01D01-56LTXQT Infineon Technologies CY8CLED0x%28D%2CG%290x.pdf Description: IC PWR PSOC CTLR 16K 56QFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DALI, DMX512, I2C, IrDA, SPI, UART/USART
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.75V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: Intelligent LED Driver
Core Processor: M8C
Supplier Device Package: 56-QFN (8x8)
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
товар відсутній
IPZA60R120P7XKSA1 IPZA60R120P7XKSA1 Infineon Technologies Infineon-IPZA60R120P7-DS-v02_00-EN.pdf?fileId=5546d462602a9dc80160454dfa181953 Description: MOSFET N-CH 600V 26A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
на замовлення 32 шт:
термін постачання 21-31 дні (днів)
1+367.23 грн
30+ 279.97 грн
IPZA60R099P7XKSA1 IPZA60R099P7XKSA1 Infineon Technologies Infineon-IPZA60R099P7-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801604532868c1948 Description: MOSFET N-CH 600V 31A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
1+424.25 грн
10+ 342.86 грн
240+ 261.99 грн
IPZA60R060P7XKSA1 IPZA60R060P7XKSA1 Infineon Technologies Infineon-IPZA60R060P7-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160316b71ad645f Description: MOSFET N-CH 600V 48A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
товар відсутній
IPZA60R037P7XKSA1 IPZA60R037P7XKSA1 Infineon Technologies Infineon-IPZA60R037P7-DS-v02_00-EN.pdf?fileId=5546d462602a9dc80160314fe3b963ab Description: MOSFET N-CH 600V 76A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.48mA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
1+746.62 грн
30+ 581.54 грн
120+ 547.34 грн
IPB60R360P7ATMA1 IPB60R360P7ATMA1 Infineon Technologies Infineon-IPB60R360P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015f2a86f0020487 Description: MOSFET N-CH 600V 9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
1000+50.53 грн
2000+ 46.22 грн
5000+ 44.48 грн
Мінімальне замовлення: 1000
IPB60R280P7ATMA1 IPB60R280P7ATMA1 Infineon Technologies Infineon-IPB60R280P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015f2a7ddc6e0485 Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
товар відсутній
IPA60R125C6E8191XKSA1 Infineon Technologies IPx60R125C6_4-24-15.pdf Description: MOSFET N-CH TO220-3
Packaging: Tube
Part Status: Obsolete
товар відсутній
IPA65R310DEXKSA1 Infineon Technologies Description: MOSFET N-CH TO220
товар відсутній
IPC60R099C6UNSAWNX6SA1 Infineon Technologies Description: MOSFET N-CH BARE DIE
Packaging: Bulk
Part Status: Obsolete
товар відсутній
IPC60R125C6UNSAWNX6SA1 Infineon Technologies Description: MOSFET N-CH BARE DIE
Packaging: Bulk
Part Status: Obsolete
товар відсутній
IPC60R190E6UNSAWNX6SA1 Infineon Technologies Description: MOSFET N-CH BARE DIE
Packaging: Bulk
Part Status: Obsolete
товар відсутній
IPC60R190E6X7SA1 Infineon Technologies Description: MOSFET N-CH
Packaging: Bulk
Part Status: Obsolete
товар відсутній
IPC60R190P6X7SA1 Infineon Technologies Description: MOSFET N-CH
Packaging: Bulk
Part Status: Obsolete
товар відсутній
IPC60R280E6UNSAWNX6SA1 Infineon Technologies Description: MOSFET N-CH BARE DIE
товар відсутній
IPC60R280E6X7SA1 Infineon Technologies Description: MOSFET N-CH
товар відсутній
IPC60R380C6X7SA1 Infineon Technologies Description: MOSFET N-CH
товар відсутній
SS05N70AKMA1 Infineon Technologies Description: MOSFET N-CH
товар відсутній
SS07N70AKMA1 Infineon Technologies Description: MOSFET N-CH
Packaging: Bulk
Part Status: Obsolete
товар відсутній
SPD04N60C3 SPD04N60C3 Infineon Technologies SP%28D%2CU%2904N60C3_Rev2.6_7-31-13.pdf Description: MOSFET N-CH 600V 4.5A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
товар відсутній
SPD07N60C3 SPD07N60C3 Infineon Technologies SP%28D%2CU%2907N60C3_Rev2.7_07-31-13.pdf Description: MOSFET N-CH 600V 7.3A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
товар відсутній
SPI08N80C3 SPI08N80C3 Infineon Technologies SPI08N80C3_Rev2.91_9-27-11.pdf Description: MOSFET N-CH 800V 8A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 470µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
товар відсутній
SPS03N60C3 SPS03N60C3 Infineon Technologies SPS03N60C3_Rev2.2_7-31-13.pdf Description: MOSFET N-CH 600V 3.2A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
товар відсутній
CG7470AM Infineon Technologies Description: IC CLOCK DISTRIBUTION QFN
Packaging: Bulk
Part Status: Obsolete
товар відсутній
CG7476AF Infineon Technologies Description: IC CLOCK DISTRIBUTION QFN
Packaging: Bulk
Part Status: Obsolete
товар відсутній
CYTT21403-44LQI35T Infineon Technologies CYTT21xyx_RevA_Summary_Feb17,2016.pdf Description: IC MCU TRUETOUCH 44QFN
Packaging: Tape & Reel (TR)
Package / Case: 44-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI
Voltage - Supply: 1.71V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 44-QFN (5x5)
Touchscreen: 2 Wire Capacitive
Part Status: Obsolete
товар відсутній
CYTT21403-48LQI36T Infineon Technologies CYTT21xyx_RevA_Summary_Feb17,2016.pdf Description: IC MCU TRUETOUCH 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI
Voltage - Supply: 1.71V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 48-QFN (6x6)
Touchscreen: 2 Wire Capacitive
товар відсутній
CG7470AMT Infineon Technologies Description: IC CLOCK DISTRIBUTION QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товар відсутній
TLD2326ELXUMA1 Infineon-TLD2326EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e53c6bc3ad2
TLD2326ELXUMA1
Виробник: Infineon Technologies
Description: IC LED DRVR LINEAR 120MA 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
товар відсутній
ESD144B1W0201E6327XTSA1 Infineon-New+generation+ESD+protection+diodes-PB-v01_00-EN.pdf?fileId=5546d4625cc9456a015d0ccb7b9a57e3
ESD144B1W0201E6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 18VWM 20VC WLL-2-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 18.5V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 21W
Power Line Protection: Yes
Part Status: Active
на замовлення 150000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
15000+1.75 грн
Мінімальне замовлення: 15000
BSS816NWH6327XTSA1 Infineon-BSS816NW-DS-v02_03-en.pdf?fileId=db3a304335113a6301351e704a2e1332
BSS816NWH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 1.4A SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 2.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 750mV @ 3.7µA
Supplier Device Package: PG-SOT323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
на замовлення 115497 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+25.85 грн
17+ 17.28 грн
100+ 8.73 грн
500+ 6.69 грн
1000+ 4.96 грн
Мінімальне замовлення: 12
BTS409L1E3062ABUMA1 Infineon-BTS409L1%20E3062A-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9b0a1b7361a
BTS409L1E3062ABUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-5
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Not For New Designs
на замовлення 948 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+234.17 грн
10+ 202.66 грн
25+ 191.59 грн
100+ 155.82 грн
250+ 147.83 грн
500+ 132.65 грн
Мінімальне замовлення: 2
AUIRS2092STR auirs2092s.pdf?fileId=5546d462533600a4015355bf314b15a3
AUIRS2092STR
Виробник: Infineon Technologies
Description: IC AMP CLASS D MONO 16SOIC
Packaging: Cut Tape (CT)
Features: Depop
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Supplier Device Package: 16-SOIC
Part Status: Obsolete
товар відсутній
BTS410F2E3062ABUMA1 Infineon-BTS410F2+E3062A-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9b094463616
BTS410F2E3062ABUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-5
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 190mOhm
Input Type: Non-Inverting
Voltage - Load: 4.7V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
товар відсутній
BAT5403WE6327HTSA1 INFNS15399-1.pdf?t.download=true&u=5oefqw
BAT5403WE6327HTSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTT 30V 200MA SOD323-2
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SOD323-3D
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 17607 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+32.69 грн
13+ 22.55 грн
100+ 11.36 грн
500+ 9.45 грн
1000+ 7.36 грн
Мінімальне замовлення: 10
BAT5402VH6327XTSA1 INFNS15399-1.pdf?t.download=true&u=5oefqw
BAT5402VH6327XTSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 30V 200MA SC79-2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 138364 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
13+23.57 грн
19+ 15.96 грн
100+ 8.05 грн
500+ 6.69 грн
1000+ 5.21 грн
Мінімальне замовлення: 13
IPD25N06S4L30ATMA2 Infineon-IPD25N06S4L_30-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038898f7b0caa
IPD25N06S4L30ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 25A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 8µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 14439 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+72.99 грн
10+ 57.4 грн
100+ 44.66 грн
500+ 35.53 грн
1000+ 28.94 грн
Мінімальне замовлення: 5
IPB044N15N5ATMA1 Infineon-IPB044N15N5-DS-v02_00-EN.pdf?fileId=5546d462576f347501576ffd3e582757
IPB044N15N5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 174A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 87A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 264µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 75 V
на замовлення 1390 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+447.82 грн
10+ 369.66 грн
100+ 308.05 грн
500+ 255.08 грн
IPN50R650CEATMA1 Infineon-IPN50R650CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547adae9265ad8
IPN50R650CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 9A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-SOT223-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+52.46 грн
Мінімальне замовлення: 6
BFR182WH6327XTSA1 bfr182w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114269d1e43064c
BFR182WH6327XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Active
на замовлення 24185 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
13+25.09 грн
17+ 18.08 грн
25+ 15.87 грн
100+ 9.63 грн
250+ 7.97 грн
500+ 6.38 грн
1000+ 4.81 грн
Мінімальне замовлення: 13
BBY5802VH6327XTSA1 bby58series.pdf?folderId=db3a304313d846880113ddc160d402c0&fileId=db3a304313d846880113de6d4a720386
BBY5802VH6327XTSA1
Виробник: Infineon Technologies
Description: DIODE TUNING 10V 20MA SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 5.5pF @ 6V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.5
на замовлення 99454 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+29.65 грн
13+ 24.01 грн
100+ 16.66 грн
500+ 12.21 грн
1000+ 9.92 грн
Мінімальне замовлення: 11
IPB048N15N5ATMA1 Infineon-IPB048N15N5-DS-v02_00-EN.pdf?fileId=5546d46253f650570154a01efd885463
IPB048N15N5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 264µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 75 V
на замовлення 1842 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+532.21 грн
10+ 439.58 грн
100+ 366.32 грн
500+ 303.34 грн
BBY5302VH6327XTSA1 INFNS15715-1.pdf?t.download=true&u=5oefqw
BBY5302VH6327XTSA1
Виробник: Infineon Technologies
Description: DIODE TUNING 6V 20MA SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 3.1pF @ 3V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: PG-SC79-2
Part Status: Active
Voltage - Peak Reverse (Max): 6 V
Capacitance Ratio: 2.6
на замовлення 6678 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+31.17 грн
12+ 25.26 грн
100+ 17.56 грн
500+ 12.86 грн
1000+ 10.45 грн
Мінімальне замовлення: 10
AUIPS7081RTRL auips7081.pdf?fileId=5546d462533600a4015355a7b8d5131e
AUIPS7081RTRL
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 55mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
SPD04N60C3ATMA1 Infineon-SPD_U04N60C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f1a0318e31921
SPD04N60C3ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 4.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+176.39 грн
10+ 109.46 грн
100+ 75.03 грн
500+ 56.55 грн
1000+ 52.09 грн
Мінімальне замовлення: 2
EVALM1099MCTOBO1 EVAL-M1-099M-C_UM_Rev1.0_8-21-17.pdf
EVALM1099MCTOBO1
Виробник: Infineon Technologies
Description: EV KIT IMOTION CNTRL BOARD
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IRMCK099M
Supplied Contents: Board(s)
Part Status: Active
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3777.94 грн
MCETOOLV2 Infineon-2017-01+MCETOOLV2+User+Manual-AN-v01_04-EN.pdf?fileId=5546d4625e5ce62d015e60ca0d9540d6
MCETOOLV2
Виробник: Infineon Technologies
Description: IMOTION DEBUGGER
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+7606.82 грн
BTS550PE3146NKSA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO218-5
товар відсутній
T1851N70TOHXPSA1 Infineon-T1851N-DS-v06_00-en_de.pdf?fileId=db3a304412b407950112b43074f750d0
Виробник: Infineon Technologies
Description: SCR MODULE 7000V 2880A DO200AE
товар відсутній
T1851N60TOHXPSA1 T1851N_Rev6.0_05-02-11.pdf
Виробник: Infineon Technologies
Description: SCR MODULE 7000V 2880A DO200AE
товар відсутній
T4051N85TOHXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE T20235K-1-1
товар відсутній
T4161N80TOHPRXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE T20235K-1-1
товар відсутній
T4301N22TOFXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 2900V 6330A DO200AE
товар відсутній
T901N32TOFXPSA1 T901N_7.0_05-02-11.pdf
Виробник: Infineon Technologies
Description: SCR MODULE 3600V 29900A DO200AE
товар відсутній
IPP80N07S405AKSA1
IPP80N07S405AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH TO220-3
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Part Status: Active
товар відсутній
IPI80N07S405AKSA1 IP(B,I,P)80N07S4-05_Rev1.0_07-14-14.pdf
Виробник: Infineon Technologies
Description: MOSFET N-CH TO262-3
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Part Status: Obsolete
товар відсутній
AUXHMF1404ZSTRL
Виробник: Infineon Technologies
Description: MOSFET N-CH TO263-3
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товар відсутній
BSP615S2LHUMA1
BSP615S2LHUMA1
Виробник: Infineon Technologies
Description: MOSFET SOT223-4
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товар відсутній
IPB80N07S405ATMA1 IP(B,I,P)80N07S4-05_Rev1.0_07-14-14.pdf
Виробник: Infineon Technologies
Description: MOSFET N-CH TO263-3
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Part Status: Obsolete
товар відсутній
ITD50N04S4L04ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH TO252-5
товар відсутній
CY8CLED01D01-56LTXQT CY8CLED0x%28D%2CG%290x.pdf
CY8CLED01D01-56LTXQT
Виробник: Infineon Technologies
Description: IC PWR PSOC CTLR 16K 56QFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DALI, DMX512, I2C, IrDA, SPI, UART/USART
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.75V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: Intelligent LED Driver
Core Processor: M8C
Supplier Device Package: 56-QFN (8x8)
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
товар відсутній
IPZA60R120P7XKSA1 Infineon-IPZA60R120P7-DS-v02_00-EN.pdf?fileId=5546d462602a9dc80160454dfa181953
IPZA60R120P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 26A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
на замовлення 32 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+367.23 грн
30+ 279.97 грн
IPZA60R099P7XKSA1 Infineon-IPZA60R099P7-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801604532868c1948
IPZA60R099P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+424.25 грн
10+ 342.86 грн
240+ 261.99 грн
IPZA60R060P7XKSA1 Infineon-IPZA60R060P7-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160316b71ad645f
IPZA60R060P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 48A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
товар відсутній
IPZA60R037P7XKSA1 Infineon-IPZA60R037P7-DS-v02_00-EN.pdf?fileId=5546d462602a9dc80160314fe3b963ab
IPZA60R037P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 76A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.48mA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+746.62 грн
30+ 581.54 грн
120+ 547.34 грн
IPB60R360P7ATMA1 Infineon-IPB60R360P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015f2a86f0020487
IPB60R360P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+50.53 грн
2000+ 46.22 грн
5000+ 44.48 грн
Мінімальне замовлення: 1000
IPB60R280P7ATMA1 Infineon-IPB60R280P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015f2a7ddc6e0485
IPB60R280P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
товар відсутній
IPA60R125C6E8191XKSA1 IPx60R125C6_4-24-15.pdf
Виробник: Infineon Technologies
Description: MOSFET N-CH TO220-3
Packaging: Tube
Part Status: Obsolete
товар відсутній
IPA65R310DEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH TO220
товар відсутній
IPC60R099C6UNSAWNX6SA1
Виробник: Infineon Technologies
Description: MOSFET N-CH BARE DIE
Packaging: Bulk
Part Status: Obsolete
товар відсутній
IPC60R125C6UNSAWNX6SA1
Виробник: Infineon Technologies
Description: MOSFET N-CH BARE DIE
Packaging: Bulk
Part Status: Obsolete
товар відсутній
IPC60R190E6UNSAWNX6SA1
Виробник: Infineon Technologies
Description: MOSFET N-CH BARE DIE
Packaging: Bulk
Part Status: Obsolete
товар відсутній
IPC60R190E6X7SA1
Виробник: Infineon Technologies
Description: MOSFET N-CH
Packaging: Bulk
Part Status: Obsolete
товар відсутній
IPC60R190P6X7SA1
Виробник: Infineon Technologies
Description: MOSFET N-CH
Packaging: Bulk
Part Status: Obsolete
товар відсутній
IPC60R280E6UNSAWNX6SA1
Виробник: Infineon Technologies
Description: MOSFET N-CH BARE DIE
товар відсутній
IPC60R280E6X7SA1
Виробник: Infineon Technologies
Description: MOSFET N-CH
товар відсутній
IPC60R380C6X7SA1
Виробник: Infineon Technologies
Description: MOSFET N-CH
товар відсутній
SS05N70AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH
товар відсутній
SS07N70AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH
Packaging: Bulk
Part Status: Obsolete
товар відсутній
SPD04N60C3 SP%28D%2CU%2904N60C3_Rev2.6_7-31-13.pdf
SPD04N60C3
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 4.5A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
товар відсутній
SPD07N60C3 SP%28D%2CU%2907N60C3_Rev2.7_07-31-13.pdf
SPD07N60C3
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 7.3A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
товар відсутній
SPI08N80C3 SPI08N80C3_Rev2.91_9-27-11.pdf
SPI08N80C3
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 8A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 470µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
товар відсутній
SPS03N60C3 SPS03N60C3_Rev2.2_7-31-13.pdf
SPS03N60C3
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
товар відсутній
CG7470AM
Виробник: Infineon Technologies
Description: IC CLOCK DISTRIBUTION QFN
Packaging: Bulk
Part Status: Obsolete
товар відсутній
CG7476AF
Виробник: Infineon Technologies
Description: IC CLOCK DISTRIBUTION QFN
Packaging: Bulk
Part Status: Obsolete
товар відсутній
CYTT21403-44LQI35T CYTT21xyx_RevA_Summary_Feb17,2016.pdf
Виробник: Infineon Technologies
Description: IC MCU TRUETOUCH 44QFN
Packaging: Tape & Reel (TR)
Package / Case: 44-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI
Voltage - Supply: 1.71V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 44-QFN (5x5)
Touchscreen: 2 Wire Capacitive
Part Status: Obsolete
товар відсутній
CYTT21403-48LQI36T CYTT21xyx_RevA_Summary_Feb17,2016.pdf
Виробник: Infineon Technologies
Description: IC MCU TRUETOUCH 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI
Voltage - Supply: 1.71V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 48-QFN (6x6)
Touchscreen: 2 Wire Capacitive
товар відсутній
CG7470AMT
Виробник: Infineon Technologies
Description: IC CLOCK DISTRIBUTION QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товар відсутній
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