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BSM300GA120DLCHOSA1 Infineon Technologies Description: IGBT MOD 1200V 570A 2250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 570 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
товар відсутній
BSM300GA170DLCHOSA1 Infineon Technologies Description: IGBT MOD 1700V 600A 2520W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2520 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
товар відсутній
BSM300GB60DLCHOSA1 Infineon Technologies Description: IGBT MOD 600V 375A 1250W
товар відсутній
BSM30GD60DLCBOSA1 Infineon Technologies Description: IGBT MODULE 600V 40A 135W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 135 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1.3 nF @ 25 V
товар відсутній
BSM35GB120DN2HOSA1 Infineon Technologies Description: IGBT MOD 1200V 50A 280W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
товар відсутній
BSM35GD120DLCE3224BOSA1 Infineon Technologies Description: IGBT MOD 1200V 70A 280W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 80 µA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
товар відсутній
BSM35GD120DN2E3224BOSA1 Infineon Technologies Description: IGBT MOD 1200V 50A 280W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
товар відсутній
BSM35GP120GBOSA1 Infineon Technologies Description: IGBT MOD 1200V 45A 230W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 230 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
товар відсутній
BSM50GAL120DN2HOSA1 Infineon Technologies Description: IGBT MOD 1200V 78A 400W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 400 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
товар відсутній
BSM50GB120DLCHOSA1 Infineon Technologies Description: IGBT MOD 1200V 115A 460W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 115 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 460 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
товар відсутній
BSM50GB120DN2HOSA1 Infineon Technologies Description: IGBT MOD 1200V 78A 400W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 400 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
товар відсутній
BSM50GD120DN2BOSA1 Infineon Technologies Description: IGBT MOD 1200V 72A 350W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
товар відсутній
BSM50GD120DN2E3226BOSA1 Infineon Technologies Description: IGBT MOD 1200V 50A 350W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
товар відсутній
BSM50GP60BOSA1 Infineon Technologies Description: IGBT MODULE 600V 70A 250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
товар відсутній
BSM75GAL120DN2HOSA1 Infineon Technologies Description: IGBT MOD 1200V 105A 625W
товар відсутній
BSM75GAR120DN2HOSA1 Infineon Technologies Description: IGBT MOD 1200V 30A 235W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 235 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
товар відсутній
BSM75GB120DLCHOSA1 Infineon Technologies Description: IGBT MOD 1200V 170A 690W
товар відсутній
BSM75GB120DN2HOSA1 Infineon Technologies 75gb120dn2.pdf Description: IGBT MOD 1200V 105A 625W
товар відсутній
BSM75GD120DN2BOSA1 Infineon Technologies Description: IGBT MOD 1200V 103A 520W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 103 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 520 W
Current - Collector Cutoff (Max): 1.5 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
товар відсутній
BYM300A120DN2HOSA1 BYM300A120DN2HOSA1 Infineon Technologies Infineon-BYM300A120DN2-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b430eaef526b Description: IGBT MOD 1200V 450A 1000W
товар відсутній
BYM600A170DN2HOSA1 BYM600A170DN2HOSA1 Infineon Technologies Infineon-BYM600A170DN2-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42fc7c14d7c Description: IGBT MODULE 1400W MED PWR 62MM-2
товар відсутній
DD180N20SHPSA1 DD180N20SHPSA1 Infineon Technologies Description: DIODE MOD GP 2000V 226A BGPB34SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 226A
Supplier Device Package: BG-PB34SB-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Current - Reverse Leakage @ Vr: 1 mA @ 2000 V
товар відсутній
DD340N20SHPSA1 DD340N20SHPSA1 Infineon Technologies DD340N20S.pdf Description: DIODE MOD GP 2000V BGPB50SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: -40°C ~ 135°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 2000 V
Current - Reverse Leakage @ Vr: 1 mA @ 2000 V
товар відсутній
DDB6U100N16RRBOSA1 DDB6U100N16RRBOSA1 Infineon Technologies Infineon-DDB6U100N16RR-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430f24e52af Description: IGBT MOD 1200V 50A 350W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
товар відсутній
DDB6U104N16RRB37BOSA1 Infineon Technologies Description: MOD DIODE BRIDGE ECONO2-7
Packaging: Tray
товар відсутній
DF650R17IE4BOSA1 DF650R17IE4BOSA1 Infineon Technologies Infineon-DF650R17IE4-DS-v02_02-en_de.pdf?fileId=db3a30431ff9881501201f1e5a664bbc Description: IGBT MOD 1700V 930A 4150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 930 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
товар відсутній
F3L300R07PE4PBOSA1 F3L300R07PE4PBOSA1 Infineon Technologies Infineon-F3L300R07PE4P-DS-v02_00-EN.pdf?fileId=5546d46257fa4a9c015805c7ec845276 Description: IGBT MOD 650V 300A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 280A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+17804.76 грн
F3L300R12MT4B22BOSA1 F3L300R12MT4B22BOSA1 Infineon Technologies Infineon-F3L300R12MT4_B22-DS-v03_00-en_de.pdf?fileId=db3a304333b8a7ca0133fa764b864496 Description: IGBT MOD 1200V 450A 1550W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
товар відсутній
F3L300R12MT4B23BOSA1 F3L300R12MT4B23BOSA1 Infineon Technologies Infineon-F3L300R12MT4_B23-DS-v03_00-en_de.pdf?fileId=db3a304333b8a7ca0133f9d470e0434c Description: IGBT MOD 1200V 450A 1550W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
товар відсутній
F4100R17ME4B11BPSA1 Infineon Technologies Infineon-F4-100R17ME4_B11-DS-v03_02-EN.pdf?fileId=5546d462576f34750157ae37f25a7de9 Description: IGBT MODULE 1700V 155A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 155 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
товар відсутній
F4150R17ME4B11BPSA1 F4150R17ME4B11BPSA1 Infineon Technologies Infineon-F4-150R17ME4_B11-DS-v03_02-EN.pdf?fileId=5546d462576f34750157ae3849687df1 Description: IGBT MODULE 1700V 230A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 230 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 12 nF @ 25 V
товар відсутній
F4200R06KL4BOSA1 Infineon Technologies Description: IGBT MOD 600V 225A 695W
товар відсутній
FB10R06KL4BOMA1 Infineon Technologies Description: MOD IGBT LOW PWR EASY1-1
Packaging: Tray
товар відсутній
FB10R06KL4GB1BOMA1 Infineon Technologies Description: MOD IGBT LOW PWR EASY2-1
Packaging: Tray
Part Status: Obsolete
товар відсутній
FB10R06KL4GBOMA1 Infineon Technologies Description: MOD IGBT LOW PWR EASY2-1
Packaging: Tray
Part Status: Obsolete
товар відсутній
FB15R06KL4B1BOMA1 Infineon Technologies Description: MOD IGBT LOW PWR EASY2-1
Packaging: Tray
Part Status: Obsolete
товар відсутній
FD200R12KE3PHOSA1 FD200R12KE3PHOSA1 Infineon Technologies Infineon-FD200R12KE3P-DS-v02_00-EN.pdf?fileId=5546d46253e9fadc0153efbccd9b3c14 Description: IGBT MODULE 1200V 200A
товар відсутній
FF1200R12IE5PBPSA1 FF1200R12IE5PBPSA1 Infineon Technologies Infineon-FF1200R12IE5P-DS-v03_00-EN.pdf?fileId=5546d4625a888733015ab7d8024167c7 Description: IGBT MOD 1200V 2400A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 65.5 nF @ 25 V
товар відсутній
FF1800R17IP5PBPSA1 FF1800R17IP5PBPSA1 Infineon Technologies Infineon-FF1800R17IP5P-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf0159f37815151a7d Description: IGBT MODULE 1700V 3600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 1800A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1800000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 105 nF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+71909.38 грн
FF200R12KS4PHOSA1 FF200R12KS4PHOSA1 Infineon Technologies Infineon-FF200R12KS4P-DataSheet-v03_00-EN.pdf?fileId=5546d462700c0ae601709b2744947c33 Description: IGBT MOD 1200V 275A 1400W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 275 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1400 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+11111.06 грн
FF225R17ME3BOSA1 Infineon Technologies Infineon-FF225R17ME3-DS-v02_01-en_de.pdf?fileId=db3a30431441fb5d0114502f2f3203a2 Description: MOD IGBT MED PWR ECONOD-3
товар відсутній
FF225R17ME4PBPSA1 FF225R17ME4PBPSA1 Infineon Technologies Infineon-FF225R17ME4P-DS-v03_00-EN.pdf?fileId=5546d4625d5945ed015dc0654938452c Description: IGBT MOD 1700V 450A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
товар відсутній
FF300R12KE3B2HOSA1 Infineon Technologies Infineon-FF300R12KE3-DS-v03_02-en_cn.pdf?fileId=db3a30433dd42dcf013dd4fda49101e0 Description: IGBT MOD 1200V 440A 1450W
товар відсутній
FF300R12KE4B2HOSA1 Infineon Technologies Infineon-FF300R12KE4_B2-DS-v02_00-en_de.pdf?fileId=db3a30432ad629a6012ae685282803de Description: IGBT MOD 1200V 460A 1600W
товар відсутній
FF300R12KE4PHOSA1 Infineon Technologies Infineon-FF300R12KE4P-DS-v03_01-EN.pdf?fileId=5546d46253a864fe0153e6277502781b Description: IGBT MODULE 1200V 300A
товар відсутній
FF300R12KT3PEHOSA1 FF300R12KT3PEHOSA1 Infineon Technologies Infineon-FF300R12KT3P_E-DS-v02_01-EN.pdf?fileId=5546d462533600a401537a8c159d71fd Description: IGBT MODULE 1200V 300A
товар відсутній
FF300R12ME4PB11BPSA1 Infineon Technologies Infineon-FF300R12ME4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625b10283a015b1ee9413f0154 Description: IGBT MOD 1200V 600A 20MW
товар відсутній
FF300R12ME4PBOSA1 FF300R12ME4PBOSA1 Infineon Technologies Description: IGBT MODULE MED PWR ECONOD-3
Packaging: Tray
Part Status: Active
товар відсутній
FF300R17KE4PHOSA1 Infineon Technologies Infineon-FF300R17KE4P-DS-v03_00-EN.pdf?fileId=5546d46259d9a4bf015a8421704560db Description: IGBT MODULE 1700V 600A
товар відсутній
FF300R17ME4PB11BPSA1 FF300R17ME4PB11BPSA1 Infineon Technologies Infineon-FF300R17ME4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625b10283a015b195ecd4b4a27 Description: IGBT MOD 1700V 600A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 24.5 nF @ 25 V
товар відсутній
FF400R12KT3PEHOSA1 FF400R12KT3PEHOSA1 Infineon Technologies Infineon-FF400R12KT3P_E-DS-v02_00-EN.pdf?fileId=5546d46253f650570154517a278d6ae6 Description: IGBT MODULE 1200V 400A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
товар відсутній
FF400R17KE4HOSA1 FF400R17KE4HOSA1 Infineon Technologies Infineon-FF400R17KE4-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e47427741a36 Description: IGBT MODULE 1700V 400A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
1+20790.46 грн
10+ 18751.42 грн
FF450R12KT4PHOSA1 FF450R12KT4PHOSA1 Infineon Technologies Infineon-FF450R12KT4P-DS-v02_00-EN.pdf?fileId=5546d46253a864fe0153e6836acc78d2 Description: IGBT MODULE 1200V 450A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
товар відсутній
FF450R12ME4EB11BPSA1 FF450R12ME4EB11BPSA1 Infineon Technologies Infineon-FF450R12ME4E_B11-DS-v03_00-EN.pdf?fileId=5546d4625f96303e015fa5e4483a397d Description: MOD IGBT MED PWR ECONOD-4
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-6
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+14791.68 грн
FF600R12KE4EBOSA1 FF600R12KE4EBOSA1 Infineon Technologies Infineon-FF600R12KE4-DS-v02_02-EN.pdf?fileId=5546d46254e133b401550b1aeaef35e0 Description: IGBT MODULE 1200V 600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 38 nF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+15276.75 грн
FF600R12ME4EB11BOSA1 FF600R12ME4EB11BOSA1 Infineon Technologies Infineon-FF600R12ME4E_B11-DS-v03_00-EN.pdf?fileId=5546d462602a9dc80160307d5ba65c8a Description: IGBT MOD 1200V 995A 4050W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 995 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 4050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+16882.51 грн
FP10R12W1T4PB11BPSA1 FP10R12W1T4PB11BPSA1 Infineon Technologies Infineon-FP10R12W1T4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625bd71aa0015bfbe38fcd7202 Description: IGBT MOD 1200V 20A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
1+3601.55 грн
10+ 3089.86 грн
FP10R12W1T4PBPSA1 FP10R12W1T4PBPSA1 Infineon Technologies Infineon-FP10R12W1T4P-DS-v03_00-EN.pdf?fileId=5546d4625bd71aa0015bfbf693b47207 Description: IGBT MOD 1200V 20A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
на замовлення 19 шт:
термін постачання 21-31 дні (днів)
1+3615.24 грн
10+ 3102.02 грн
FP15R12W1T4PB11BPSA1 FP15R12W1T4PB11BPSA1 Infineon Technologies Infineon-FP15R12W1T4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625bd71aa0015bfc23b54d7253 Description: IGBT MOD 1200V 30A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 890 pF @ 25 V
товар відсутній
FP15R12W1T4PBPSA1 FP15R12W1T4PBPSA1 Infineon Technologies Infineon-FP15R12W1T4P-DS-v03_00-EN.pdf?fileId=5546d4625bd71aa0015bfc3f313e725b Description: IGBT MOD 1200V 30A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 890 pF @ 25 V
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
1+3688.99 грн
10+ 3164.91 грн
30+ 2976.43 грн
BSM300GA120DLCHOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 570A 2250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 570 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
товар відсутній
BSM300GA170DLCHOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 600A 2520W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2520 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
товар відсутній
BSM300GB60DLCHOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 600V 375A 1250W
товар відсутній
BSM30GD60DLCBOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 40A 135W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 135 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1.3 nF @ 25 V
товар відсутній
BSM35GB120DN2HOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 50A 280W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
товар відсутній
BSM35GD120DLCE3224BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 70A 280W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 80 µA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
товар відсутній
BSM35GD120DN2E3224BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 50A 280W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
товар відсутній
BSM35GP120GBOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 45A 230W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 230 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
товар відсутній
BSM50GAL120DN2HOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 78A 400W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 400 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
товар відсутній
BSM50GB120DLCHOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 115A 460W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 115 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 460 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
товар відсутній
BSM50GB120DN2HOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 78A 400W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 400 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
товар відсутній
BSM50GD120DN2BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 72A 350W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
товар відсутній
BSM50GD120DN2E3226BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 50A 350W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
товар відсутній
BSM50GP60BOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 70A 250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
товар відсутній
BSM75GAL120DN2HOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 105A 625W
товар відсутній
BSM75GAR120DN2HOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 30A 235W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 235 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
товар відсутній
BSM75GB120DLCHOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 170A 690W
товар відсутній
BSM75GB120DN2HOSA1 75gb120dn2.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 105A 625W
товар відсутній
BSM75GD120DN2BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 103A 520W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 103 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 520 W
Current - Collector Cutoff (Max): 1.5 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
товар відсутній
BYM300A120DN2HOSA1 Infineon-BYM300A120DN2-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b430eaef526b
BYM300A120DN2HOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 450A 1000W
товар відсутній
BYM600A170DN2HOSA1 Infineon-BYM600A170DN2-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42fc7c14d7c
BYM600A170DN2HOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1400W MED PWR 62MM-2
товар відсутній
DD180N20SHPSA1
DD180N20SHPSA1
Виробник: Infineon Technologies
Description: DIODE MOD GP 2000V 226A BGPB34SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 226A
Supplier Device Package: BG-PB34SB-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Current - Reverse Leakage @ Vr: 1 mA @ 2000 V
товар відсутній
DD340N20SHPSA1 DD340N20S.pdf
DD340N20SHPSA1
Виробник: Infineon Technologies
Description: DIODE MOD GP 2000V BGPB50SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: -40°C ~ 135°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 2000 V
Current - Reverse Leakage @ Vr: 1 mA @ 2000 V
товар відсутній
DDB6U100N16RRBOSA1 Infineon-DDB6U100N16RR-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430f24e52af
DDB6U100N16RRBOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 50A 350W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
товар відсутній
DDB6U104N16RRB37BOSA1
Виробник: Infineon Technologies
Description: MOD DIODE BRIDGE ECONO2-7
Packaging: Tray
товар відсутній
DF650R17IE4BOSA1 Infineon-DF650R17IE4-DS-v02_02-en_de.pdf?fileId=db3a30431ff9881501201f1e5a664bbc
DF650R17IE4BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 930A 4150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 930 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
товар відсутній
F3L300R07PE4PBOSA1 Infineon-F3L300R07PE4P-DS-v02_00-EN.pdf?fileId=5546d46257fa4a9c015805c7ec845276
F3L300R07PE4PBOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 650V 300A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 280A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+17804.76 грн
F3L300R12MT4B22BOSA1 Infineon-F3L300R12MT4_B22-DS-v03_00-en_de.pdf?fileId=db3a304333b8a7ca0133fa764b864496
F3L300R12MT4B22BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 450A 1550W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
товар відсутній
F3L300R12MT4B23BOSA1 Infineon-F3L300R12MT4_B23-DS-v03_00-en_de.pdf?fileId=db3a304333b8a7ca0133f9d470e0434c
F3L300R12MT4B23BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 450A 1550W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
товар відсутній
F4100R17ME4B11BPSA1 Infineon-F4-100R17ME4_B11-DS-v03_02-EN.pdf?fileId=5546d462576f34750157ae37f25a7de9
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 155A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 155 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
товар відсутній
F4150R17ME4B11BPSA1 Infineon-F4-150R17ME4_B11-DS-v03_02-EN.pdf?fileId=5546d462576f34750157ae3849687df1
F4150R17ME4B11BPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 230A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 230 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 12 nF @ 25 V
товар відсутній
F4200R06KL4BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 600V 225A 695W
товар відсутній
FB10R06KL4BOMA1
Виробник: Infineon Technologies
Description: MOD IGBT LOW PWR EASY1-1
Packaging: Tray
товар відсутній
FB10R06KL4GB1BOMA1
Виробник: Infineon Technologies
Description: MOD IGBT LOW PWR EASY2-1
Packaging: Tray
Part Status: Obsolete
товар відсутній
FB10R06KL4GBOMA1
Виробник: Infineon Technologies
Description: MOD IGBT LOW PWR EASY2-1
Packaging: Tray
Part Status: Obsolete
товар відсутній
FB15R06KL4B1BOMA1
Виробник: Infineon Technologies
Description: MOD IGBT LOW PWR EASY2-1
Packaging: Tray
Part Status: Obsolete
товар відсутній
FD200R12KE3PHOSA1 Infineon-FD200R12KE3P-DS-v02_00-EN.pdf?fileId=5546d46253e9fadc0153efbccd9b3c14
FD200R12KE3PHOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 200A
товар відсутній
FF1200R12IE5PBPSA1 Infineon-FF1200R12IE5P-DS-v03_00-EN.pdf?fileId=5546d4625a888733015ab7d8024167c7
FF1200R12IE5PBPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 2400A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 65.5 nF @ 25 V
товар відсутній
FF1800R17IP5PBPSA1 Infineon-FF1800R17IP5P-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf0159f37815151a7d
FF1800R17IP5PBPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 3600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 1800A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1800000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 105 nF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+71909.38 грн
FF200R12KS4PHOSA1 Infineon-FF200R12KS4P-DataSheet-v03_00-EN.pdf?fileId=5546d462700c0ae601709b2744947c33
FF200R12KS4PHOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 275A 1400W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 275 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1400 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+11111.06 грн
FF225R17ME3BOSA1 Infineon-FF225R17ME3-DS-v02_01-en_de.pdf?fileId=db3a30431441fb5d0114502f2f3203a2
Виробник: Infineon Technologies
Description: MOD IGBT MED PWR ECONOD-3
товар відсутній
FF225R17ME4PBPSA1 Infineon-FF225R17ME4P-DS-v03_00-EN.pdf?fileId=5546d4625d5945ed015dc0654938452c
FF225R17ME4PBPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 450A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
товар відсутній
FF300R12KE3B2HOSA1 Infineon-FF300R12KE3-DS-v03_02-en_cn.pdf?fileId=db3a30433dd42dcf013dd4fda49101e0
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 440A 1450W
товар відсутній
FF300R12KE4B2HOSA1 Infineon-FF300R12KE4_B2-DS-v02_00-en_de.pdf?fileId=db3a30432ad629a6012ae685282803de
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 460A 1600W
товар відсутній
FF300R12KE4PHOSA1 Infineon-FF300R12KE4P-DS-v03_01-EN.pdf?fileId=5546d46253a864fe0153e6277502781b
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 300A
товар відсутній
FF300R12KT3PEHOSA1 Infineon-FF300R12KT3P_E-DS-v02_01-EN.pdf?fileId=5546d462533600a401537a8c159d71fd
FF300R12KT3PEHOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 300A
товар відсутній
FF300R12ME4PB11BPSA1 Infineon-FF300R12ME4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625b10283a015b1ee9413f0154
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 600A 20MW
товар відсутній
FF300R12ME4PBOSA1
FF300R12ME4PBOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE MED PWR ECONOD-3
Packaging: Tray
Part Status: Active
товар відсутній
FF300R17KE4PHOSA1 Infineon-FF300R17KE4P-DS-v03_00-EN.pdf?fileId=5546d46259d9a4bf015a8421704560db
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 600A
товар відсутній
FF300R17ME4PB11BPSA1 Infineon-FF300R17ME4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625b10283a015b195ecd4b4a27
FF300R17ME4PB11BPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 600A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 24.5 nF @ 25 V
товар відсутній
FF400R12KT3PEHOSA1 Infineon-FF400R12KT3P_E-DS-v02_00-EN.pdf?fileId=5546d46253f650570154517a278d6ae6
FF400R12KT3PEHOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 400A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
товар відсутній
FF400R17KE4HOSA1 Infineon-FF400R17KE4-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e47427741a36
FF400R17KE4HOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 400A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+20790.46 грн
10+ 18751.42 грн
FF450R12KT4PHOSA1 Infineon-FF450R12KT4P-DS-v02_00-EN.pdf?fileId=5546d46253a864fe0153e6836acc78d2
FF450R12KT4PHOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 450A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
товар відсутній
FF450R12ME4EB11BPSA1 Infineon-FF450R12ME4E_B11-DS-v03_00-EN.pdf?fileId=5546d4625f96303e015fa5e4483a397d
FF450R12ME4EB11BPSA1
Виробник: Infineon Technologies
Description: MOD IGBT MED PWR ECONOD-4
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-6
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+14791.68 грн
FF600R12KE4EBOSA1 Infineon-FF600R12KE4-DS-v02_02-EN.pdf?fileId=5546d46254e133b401550b1aeaef35e0
FF600R12KE4EBOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 38 nF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+15276.75 грн
FF600R12ME4EB11BOSA1 Infineon-FF600R12ME4E_B11-DS-v03_00-EN.pdf?fileId=5546d462602a9dc80160307d5ba65c8a
FF600R12ME4EB11BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 995A 4050W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 995 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 4050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+16882.51 грн
FP10R12W1T4PB11BPSA1 Infineon-FP10R12W1T4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625bd71aa0015bfbe38fcd7202
FP10R12W1T4PB11BPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 20A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3601.55 грн
10+ 3089.86 грн
FP10R12W1T4PBPSA1 Infineon-FP10R12W1T4P-DS-v03_00-EN.pdf?fileId=5546d4625bd71aa0015bfbf693b47207
FP10R12W1T4PBPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 20A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
на замовлення 19 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3615.24 грн
10+ 3102.02 грн
FP15R12W1T4PB11BPSA1 Infineon-FP15R12W1T4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625bd71aa0015bfc23b54d7253
FP15R12W1T4PB11BPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 30A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 890 pF @ 25 V
товар відсутній
FP15R12W1T4PBPSA1 Infineon-FP15R12W1T4P-DS-v03_00-EN.pdf?fileId=5546d4625bd71aa0015bfc3f313e725b
FP15R12W1T4PBPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 30A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 890 pF @ 25 V
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3688.99 грн
10+ 3164.91 грн
30+ 2976.43 грн
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