Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (139419) > Сторінка 311 з 2324
Фото | Назва | Виробник | Інформація |
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ND241S14KHPSA1 | Infineon Technologies | Description: DIODE GP 1.4KV 261A BG-PB50ND-1 |
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PS2GFANSET30599NOSA1 | Infineon Technologies | Description: MOD IGBT STACK PSAO-1 |
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PS3GHFANSET30603NOSA1 | Infineon Technologies | Description: MOD IGBT STACK PSAO-1 |
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PSDC217E3730833NOSA1 | Infineon Technologies | Description: MOD IGBT STACK PSAO-1 |
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SCREWCLAMPEASY1XOXA1 | Infineon Technologies | Description: EASY ACCESSORY |
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STT2200N16P55XPSA1 | Infineon Technologies | Description: SCR MODULE POWERBLOCK PS55-1 |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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T1330N20TOFVTXPSA1 | Infineon Technologies | Description: SCR MODULE 2200V 2600A DO200AC |
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T1330N22TOFVTXPSA1 | Infineon Technologies | Description: SCR MODULE 2200V 2600A DO200AC |
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T1590N22TOFVTXPSA1 | Infineon Technologies |
Description: SCR MODULE 2800V 3200A DO200AD Packaging: Tray Package / Case: DO-200AD Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 32000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 1590 A Voltage - Gate Trigger (Vgt) (Max): 3 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 3200 A Voltage - Off State: 2.8 kV |
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T1590N24TOFVTXPSA1 | Infineon Technologies |
Description: SCR MODULE 2800V 3200A DO200AD Packaging: Tray Package / Case: DO-200AD Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 32000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 1590 A Voltage - Gate Trigger (Vgt) (Max): 3 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 3200 A Voltage - Off State: 2.8 kV |
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T1590N28TOFVTXPSA1 | Infineon Technologies |
Description: SCR MODULE 2800V 3200A DO200AD Packaging: Tray Package / Case: DO-200AD Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 3200A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 1590 A Voltage - Gate Trigger (Vgt) (Max): 3 V Part Status: Active Current - On State (It (RMS)) (Max): 3200 A Voltage - Off State: 2.8 kV |
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T1800N42TOFXPSA1 | Infineon Technologies | Description: SCR MODULE 4200V 2820A DO200AE |
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T1960N20TOFVTXPSA1 | Infineon Technologies |
Description: SCR MODULE 2200V 4100A DO200AD Packaging: Tray Package / Case: TO-200AD Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 1960 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 4100 A Voltage - Off State: 2.2 kV |
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T2001N36TOFVTXPSA1 | Infineon Technologies | Description: SCR MODULE 3600V 3200A DO200AE |
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T2180N12TOFVTXPSA1 | Infineon Technologies | Description: SCR MODULE 1800V 4460A DO200AD |
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T2351N52TOHXPSA1 | Infineon Technologies | Description: SCR MODULE 5200V 3530A DO200AE |
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T2871N80TOHXPSA1 | Infineon Technologies | Description: SCR MODULE 8000V 4120A DO200AE |
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T360N20TOFXPSA1 | Infineon Technologies |
Description: SCR MODULE 2600V 550A DO200AA Packaging: Tray Package / Case: DO-200AA, A-PUK Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 5000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 360 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 550 A Voltage - Off State: 2.6 kV |
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T420N16TOFXPSA1 | Infineon Technologies |
Description: SCR MODULE 1800V 750A DO200AA Packaging: Tray Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 7200A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 424 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (RMS)) (Max): 750 A Voltage - Off State: 1.8 kV |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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T640N12TOFXPSA1 | Infineon Technologies |
Description: SCR MODULE 1800V 1250A DO200AA Packaging: Tray Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 644 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - On State (It (RMS)) (Max): 1250 A Voltage - Off State: 1.8 kV |
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T640N14TOFXPSA1 | Infineon Technologies |
Description: SCR MODULE 1800V 1250A DO200AA Packaging: Tray Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 644 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Part Status: Active Current - On State (It (RMS)) (Max): 1250 A Voltage - Off State: 1.8 kV |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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T640N18TOFXPSA1 | Infineon Technologies | Description: SCR MODULE 1800V 1250A DO200AA |
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T690N02TOFXPSA1 | Infineon Technologies |
Description: SCR MODULE 600V 900A DO200AA Packaging: Tray Package / Case: TO-200AA Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C Structure: Single Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 7800A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 694 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 900 A Voltage - Off State: 600 V |
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T690N04TOFXPSA1 | Infineon Technologies |
Description: SCR MODULE 600V 900A DO200AA Packaging: Tray Package / Case: TO-200AA Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 7800A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 694 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 900 A Voltage - Off State: 600 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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T690N06TOFXPSA1 | Infineon Technologies |
Description: SCR MODULE 600V 900A DO200AA Packaging: Tray Package / Case: TO-200AA Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C Structure: Single Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 7800A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 694 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 900 A Voltage - Off State: 600 V |
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T740N26TOFXPSA1 | Infineon Technologies |
Description: SCR MODULE 2600V 1500A DO200AB Packaging: Tray Package / Case: DO-200AB, B-PUK Mounting Type: Clamp On Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 745 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - On State (It (RMS)) (Max): 1500 A Voltage - Off State: 2.6 kV |
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T860N30TOFVTXPSA1 | Infineon Technologies |
Description: SCR MODULE 3600V 2000A DO200AC Packaging: Tray Package / Case: TO-200AC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 500 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 18000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 860 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 2000 A Voltage - Off State: 3.6 kV |
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T860N32TOFVTXPSA1 | Infineon Technologies | Description: SCR MODULE 3600V 2000A DO200AC |
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T920N02TOFXPSA1 | Infineon Technologies | Description: SCR MODULE 600V 1500A DO200AA |
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TD122N22KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 2400V 220A MODULE Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 3300A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 140 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (RMS)) (Max): 220 A Voltage - Off State: 2.4 kV |
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TD122N24KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 2400V 220A MODULE Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 3300A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 140 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (RMS)) (Max): 220 A Voltage - Off State: 2.4 kV |
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TD150N24KOFHPSA1 | Infineon Technologies | Description: SCR MODULE 2600V 350A MODULE |
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TD150N26KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 2600V 350A MODULE Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 4500A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 223 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (RMS)) (Max): 350 A Voltage - Off State: 2.6 kV |
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TD210N16KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1800V 410A MODULE Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 6600A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 261 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (RMS)) (Max): 410 A Voltage - Off State: 1.8 kV |
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TD425N16KOFHPSA2 | Infineon Technologies |
Description: SCR MODULE 1800V 800A MODULE Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 471 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Part Status: Active Current - On State (It (RMS)) (Max): 800 A Voltage - Off State: 1.8 kV |
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TD430N22KOFHPSA2 | Infineon Technologies |
Description: SCR MODULE 2200V 800A MODULE Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 14000A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 430 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Part Status: Active Current - On State (It (RMS)) (Max): 800 A Voltage - Off State: 2.2 kV |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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TD430N22KOFTIMHPSA1 | Infineon Technologies | Description: SCR MODULE 2200V 800A MODULE |
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TD570N16KOFHPSA2 | Infineon Technologies |
Description: SCR MODULE 1600V 900A MODULE Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 125°C Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 600 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - On State (It (RMS)) (Max): 900 A Voltage - Off State: 1.6 kV |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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TDB6HK180N16RRPB11BPSA1 | Infineon Technologies |
Description: SCR MODULE IGBT LOW PWR ECONO2-7 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 175°C (TJ) Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode Current - Hold (Ih) (Max): 220 mA Current - Gate Trigger (Igt) (Max): 100 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1600A @ 50Hz Number of SCRs, Diodes: 3 SCRs, 3 Diodes Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Active Voltage - Off State: 1.6 kV |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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TT175N16SOFHPSA1 | Infineon Technologies | Description: SCR MODULE 1600V 275A MODULE |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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TZ810N22KOFB01HPSA1 | Infineon Technologies | Description: SCR MODULE 2200V 1500A MODULE |
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TZ810N22KOFTIMHPSA1 | Infineon Technologies | Description: SCR MODULE 2200V 1500A MODULE |
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TZ860N16KOFTIMHPSA1 | Infineon Technologies | Description: SCR MODULE 1600V 1500A MODULE |
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XMC4402F100K256BAXQMA1 | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 100LQFP Packaging: Tray Package / Case: 100-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 256KB (256K x 8) RAM Size: 80K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 24x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB Peripherals: DMA, I2S, LED, POR, PWM, WDT Supplier Device Package: PG-LQFP-100-25 Part Status: Active Number of I/O: 55 DigiKey Programmable: Not Verified |
на замовлення 490 шт: термін постачання 21-31 дні (днів) |
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2ED2304S06FXLSA1 | Infineon Technologies |
Description: IC HVIC 8DSOP Packaging: Tube Part Status: Obsolete DigiKey Programmable: Not Verified |
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IPA60R170CFD7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 8A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V Power Dissipation (Max): 26W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 300µA Supplier Device Package: PG-TO220-FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V |
на замовлення 224 шт: термін постачання 21-31 дні (днів) |
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IPA70R450P7SXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 700V 10A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V Power Dissipation (Max): 22.7W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 120µA Supplier Device Package: PG-TO220-FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 400 V Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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IPA70R750P7SXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 700V 6.5A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V Power Dissipation (Max): 21.2W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 70µA Supplier Device Package: PG-TO220-FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 400 V Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V |
на замовлення 76 шт: термін постачання 21-31 дні (днів) |
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IPA70R900P7SXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 700V 6A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V Power Dissipation (Max): 20.5W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: PG-TO220-FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 400 V Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V |
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IPP60R170CFD7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 14A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 300µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V |
на замовлення 247 шт: термін постачання 21-31 дні (днів) |
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IPSA70R1K4P7SAKMA1 | Infineon Technologies |
Description: MOSFET N-CH 700V 4A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 700mA, 10V Power Dissipation (Max): 22.7W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: PG-TO251-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 400 V Input Capacitance (Ciss) (Max) @ Vds: 158 pF @ 400 V |
товар відсутній |
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IPSA70R360P7SAKMA1 | Infineon Technologies |
Description: MOSFET N-CH 700V 12.5A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 3A, 10V Power Dissipation (Max): 59.5W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 150µA Supplier Device Package: PG-TO251-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 400 V Input Capacitance (Ciss) (Max) @ Vds: 517 pF @ 400 V |
на замовлення 345 шт: термін постачання 21-31 дні (днів) |
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IPSA70R450P7SAKMA1 | Infineon Technologies |
Description: MOSFET N-CH 700V 10A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 120µA Supplier Device Package: PG-TO251-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 400 V Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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IPSA70R600P7SAKMA1 | Infineon Technologies |
Description: MOSFET N-CH 700V 8.5A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V Power Dissipation (Max): 43.1W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: PG-TO251-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 400 V Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V |
товар відсутній |
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IPSA70R900P7SAKMA1 | Infineon Technologies |
Description: MOSFET N-CH 700V 6A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V Power Dissipation (Max): 30.5W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: PG-TO251-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 400 V Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V |
товар відсутній |
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IPZA60R080P7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 37A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V Power Dissipation (Max): 129W (Tc) Vgs(th) (Max) @ Id: 4V @ 590µA Supplier Device Package: PG-TO247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V |
на замовлення 243 шт: термін постачання 21-31 дні (днів) |
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IPZA60R180P7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 18A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V Power Dissipation (Max): 72W (Tc) Vgs(th) (Max) @ Id: 4V @ 280µA Supplier Device Package: PG-TO247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V |
на замовлення 240 шт: термін постачання 21-31 дні (днів) |
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BCR430UXTSA1 | Infineon Technologies |
Description: IC LED DRV LIN PWM 100MA SOT23-6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Voltage - Output: 42V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -40°C ~ 150°C (TJ) Applications: LED Lighting Current - Output / Channel: 100mA Internal Switch(s): No Topology: Constant Current Supplier Device Package: PG-SOT23-6-1 Dimming: PWM Voltage - Supply (Min): 6V Voltage - Supply (Max): 42V |
товар відсутній |
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IPD60R280CFD7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 9A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V Power Dissipation (Max): 51W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 180µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 400 V |
на замовлення 4881 шт: термін постачання 21-31 дні (днів) |
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IPL60R185CFD7AUMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 14A 4VSON Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 300µA Supplier Device Package: PG-VSON-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V |
на замовлення 2973 шт: термін постачання 21-31 дні (днів) |
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ND241S14KHPSA1 |
Виробник: Infineon Technologies
Description: DIODE GP 1.4KV 261A BG-PB50ND-1
Description: DIODE GP 1.4KV 261A BG-PB50ND-1
товар відсутній
PS2GFANSET30599NOSA1 |
Виробник: Infineon Technologies
Description: MOD IGBT STACK PSAO-1
Description: MOD IGBT STACK PSAO-1
товар відсутній
PS3GHFANSET30603NOSA1 |
Виробник: Infineon Technologies
Description: MOD IGBT STACK PSAO-1
Description: MOD IGBT STACK PSAO-1
товар відсутній
PSDC217E3730833NOSA1 |
Виробник: Infineon Technologies
Description: MOD IGBT STACK PSAO-1
Description: MOD IGBT STACK PSAO-1
товар відсутній
STT2200N16P55XPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE POWERBLOCK PS55-1
Description: SCR MODULE POWERBLOCK PS55-1
на замовлення 1 шт:
термін постачання 21-31 дні (днів)T1330N20TOFVTXPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 2200V 2600A DO200AC
Description: SCR MODULE 2200V 2600A DO200AC
товар відсутній
T1330N22TOFVTXPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 2200V 2600A DO200AC
Description: SCR MODULE 2200V 2600A DO200AC
товар відсутній
T1590N22TOFVTXPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 2800V 3200A DO200AD
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 32000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1590 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 3200 A
Voltage - Off State: 2.8 kV
Description: SCR MODULE 2800V 3200A DO200AD
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 32000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1590 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 3200 A
Voltage - Off State: 2.8 kV
товар відсутній
T1590N24TOFVTXPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 2800V 3200A DO200AD
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 32000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1590 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 3200 A
Voltage - Off State: 2.8 kV
Description: SCR MODULE 2800V 3200A DO200AD
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 32000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1590 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 3200 A
Voltage - Off State: 2.8 kV
товар відсутній
T1590N28TOFVTXPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 2800V 3200A DO200AD
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 3200A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1590 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Part Status: Active
Current - On State (It (RMS)) (Max): 3200 A
Voltage - Off State: 2.8 kV
Description: SCR MODULE 2800V 3200A DO200AD
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 3200A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1590 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Part Status: Active
Current - On State (It (RMS)) (Max): 3200 A
Voltage - Off State: 2.8 kV
товар відсутній
T1800N42TOFXPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 4200V 2820A DO200AE
Description: SCR MODULE 4200V 2820A DO200AE
товар відсутній
T1960N20TOFVTXPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 2200V 4100A DO200AD
Packaging: Tray
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1960 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 2.2 kV
Description: SCR MODULE 2200V 4100A DO200AD
Packaging: Tray
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1960 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 2.2 kV
товар відсутній
T2001N36TOFVTXPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 3600V 3200A DO200AE
Description: SCR MODULE 3600V 3200A DO200AE
товар відсутній
T2180N12TOFVTXPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 1800V 4460A DO200AD
Description: SCR MODULE 1800V 4460A DO200AD
товар відсутній
T2351N52TOHXPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 5200V 3530A DO200AE
Description: SCR MODULE 5200V 3530A DO200AE
товар відсутній
T2871N80TOHXPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 8000V 4120A DO200AE
Description: SCR MODULE 8000V 4120A DO200AE
товар відсутній
T360N20TOFXPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 2600V 550A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 360 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 550 A
Voltage - Off State: 2.6 kV
Description: SCR MODULE 2600V 550A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 360 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 550 A
Voltage - Off State: 2.6 kV
товар відсутній
T420N16TOFXPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 1800V 750A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7200A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 424 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 750 A
Voltage - Off State: 1.8 kV
Description: SCR MODULE 1800V 750A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7200A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 424 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 750 A
Voltage - Off State: 1.8 kV
на замовлення 10 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 8338.39 грн |
T640N12TOFXPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 1800V 1250A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 644 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1250 A
Voltage - Off State: 1.8 kV
Description: SCR MODULE 1800V 1250A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 644 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1250 A
Voltage - Off State: 1.8 kV
товар відсутній
T640N14TOFXPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 1800V 1250A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 644 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1250 A
Voltage - Off State: 1.8 kV
Description: SCR MODULE 1800V 1250A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 644 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1250 A
Voltage - Off State: 1.8 kV
на замовлення 12 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 9390.41 грн |
12+ | 8370.24 грн |
T640N18TOFXPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 1800V 1250A DO200AA
Description: SCR MODULE 1800V 1250A DO200AA
товар відсутній
T690N02TOFXPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 600V 900A DO200AA
Packaging: Tray
Package / Case: TO-200AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7800A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 694 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 600 V
Description: SCR MODULE 600V 900A DO200AA
Packaging: Tray
Package / Case: TO-200AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7800A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 694 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 600 V
товар відсутній
T690N04TOFXPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 600V 900A DO200AA
Packaging: Tray
Package / Case: TO-200AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7800A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 694 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 600 V
Description: SCR MODULE 600V 900A DO200AA
Packaging: Tray
Package / Case: TO-200AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7800A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 694 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 600 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 7463.78 грн |
T690N06TOFXPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 600V 900A DO200AA
Packaging: Tray
Package / Case: TO-200AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7800A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 694 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 600 V
Description: SCR MODULE 600V 900A DO200AA
Packaging: Tray
Package / Case: TO-200AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7800A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 694 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 600 V
товар відсутній
T740N26TOFXPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 2600V 1500A DO200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 745 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2.6 kV
Description: SCR MODULE 2600V 1500A DO200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 745 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2.6 kV
товар відсутній
T860N30TOFVTXPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 3600V 2000A DO200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 18000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 860 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 2000 A
Voltage - Off State: 3.6 kV
Description: SCR MODULE 3600V 2000A DO200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 18000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 860 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 2000 A
Voltage - Off State: 3.6 kV
товар відсутній
T860N32TOFVTXPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 3600V 2000A DO200AC
Description: SCR MODULE 3600V 2000A DO200AC
товар відсутній
T920N02TOFXPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 600V 1500A DO200AA
Description: SCR MODULE 600V 1500A DO200AA
товар відсутній
TD122N22KOFHPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 2400V 220A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 3300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 140 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 220 A
Voltage - Off State: 2.4 kV
Description: SCR MODULE 2400V 220A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 3300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 140 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 220 A
Voltage - Off State: 2.4 kV
товар відсутній
TD122N24KOFHPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 2400V 220A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 3300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 140 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 220 A
Voltage - Off State: 2.4 kV
Description: SCR MODULE 2400V 220A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 3300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 140 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 220 A
Voltage - Off State: 2.4 kV
товар відсутній
TD150N24KOFHPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 2600V 350A MODULE
Description: SCR MODULE 2600V 350A MODULE
товар відсутній
TD150N26KOFHPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 2600V 350A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4500A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 223 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 350 A
Voltage - Off State: 2.6 kV
Description: SCR MODULE 2600V 350A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4500A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 223 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 350 A
Voltage - Off State: 2.6 kV
товар відсутній
TD210N16KOFHPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 1800V 410A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6600A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 261 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 410 A
Voltage - Off State: 1.8 kV
Description: SCR MODULE 1800V 410A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6600A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 261 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 410 A
Voltage - Off State: 1.8 kV
товар відсутній
TD425N16KOFHPSA2 |
Виробник: Infineon Technologies
Description: SCR MODULE 1800V 800A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 471 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 1.8 kV
Description: SCR MODULE 1800V 800A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 471 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 1.8 kV
товар відсутній
TD430N22KOFHPSA2 |
Виробник: Infineon Technologies
Description: SCR MODULE 2200V 800A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 430 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 2.2 kV
Description: SCR MODULE 2200V 800A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 430 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 2.2 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 21734.59 грн |
TD430N22KOFTIMHPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 2200V 800A MODULE
Description: SCR MODULE 2200V 800A MODULE
товар відсутній
TD570N16KOFHPSA2 |
Виробник: Infineon Technologies
Description: SCR MODULE 1600V 900A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 600 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1600V 900A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 600 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.6 kV
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 21883.99 грн |
TDB6HK180N16RRPB11BPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE IGBT LOW PWR ECONO2-7
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 175°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 220 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1600A @ 50Hz
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Voltage - Off State: 1.6 kV
Description: SCR MODULE IGBT LOW PWR ECONO2-7
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 175°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 220 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1600A @ 50Hz
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Voltage - Off State: 1.6 kV
на замовлення 10 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 10989.46 грн |
10+ | 9911.59 грн |
TT175N16SOFHPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 1600V 275A MODULE
Description: SCR MODULE 1600V 275A MODULE
на замовлення 10 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 4628.29 грн |
10+ | 4186.52 грн |
TZ810N22KOFB01HPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 2200V 1500A MODULE
Description: SCR MODULE 2200V 1500A MODULE
товар відсутній
TZ810N22KOFTIMHPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 2200V 1500A MODULE
Description: SCR MODULE 2200V 1500A MODULE
товар відсутній
TZ860N16KOFTIMHPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 1600V 1500A MODULE
Description: SCR MODULE 1600V 1500A MODULE
товар відсутній
XMC4402F100K256BAXQMA1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-25
Part Status: Active
Number of I/O: 55
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-25
Part Status: Active
Number of I/O: 55
DigiKey Programmable: Not Verified
на замовлення 490 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 894.84 грн |
10+ | 654.29 грн |
25+ | 602.56 грн |
90+ | 515.4 грн |
270+ | 484.68 грн |
450+ | 473.31 грн |
2ED2304S06FXLSA1 |
Виробник: Infineon Technologies
Description: IC HVIC 8DSOP
Packaging: Tube
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC HVIC 8DSOP
Packaging: Tube
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
IPA60R170CFD7XKSA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 8A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
Description: MOSFET N-CH 650V 8A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
на замовлення 224 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 259.89 грн |
10+ | 163.72 грн |
100+ | 114.57 грн |
IPA70R450P7SXKSA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 10A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 22.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
Description: MOSFET N-CH 700V 10A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 22.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)IPA70R750P7SXKSA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 6.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Power Dissipation (Max): 21.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
Description: MOSFET N-CH 700V 6.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Power Dissipation (Max): 21.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
на замовлення 76 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 70.03 грн |
10+ | 55.45 грн |
IPA70R900P7SXKSA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V
Power Dissipation (Max): 20.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V
Description: MOSFET N-CH 700V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V
Power Dissipation (Max): 20.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V
товар відсутній
IPP60R170CFD7XKSA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 14A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
Description: MOSFET N-CH 650V 14A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
на замовлення 247 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 253.67 грн |
10+ | 159.75 грн |
100+ | 111.83 грн |
IPSA70R1K4P7SAKMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 700mA, 10V
Power Dissipation (Max): 22.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 158 pF @ 400 V
Description: MOSFET N-CH 700V 4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 700mA, 10V
Power Dissipation (Max): 22.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 158 pF @ 400 V
товар відсутній
IPSA70R360P7SAKMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 12.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3A, 10V
Power Dissipation (Max): 59.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 517 pF @ 400 V
Description: MOSFET N-CH 700V 12.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3A, 10V
Power Dissipation (Max): 59.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 517 pF @ 400 V
на замовлення 345 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 113.61 грн |
75+ | 48.82 грн |
150+ | 43.71 грн |
IPSA70R450P7SAKMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 10A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
Description: MOSFET N-CH 700V 10A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 63.81 грн |
10+ | 50.35 грн |
100+ | 39.21 грн |
500+ | 31.19 грн |
1000+ | 25.41 грн |
IPSA70R600P7SAKMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 8.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V
Power Dissipation (Max): 43.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V
Description: MOSFET N-CH 700V 8.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V
Power Dissipation (Max): 43.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V
товар відсутній
IPSA70R900P7SAKMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 6A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V
Power Dissipation (Max): 30.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V
Description: MOSFET N-CH 700V 6A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V
Power Dissipation (Max): 30.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V
товар відсутній
IPZA60R080P7XKSA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 37A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
Description: MOSFET N-CH 600V 37A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
на замовлення 243 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 441.2 грн |
30+ | 336.59 грн |
120+ | 288.52 грн |
IPZA60R180P7XKSA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 18A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
Description: MOSFET N-CH 600V 18A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
на замовлення 240 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 356.38 грн |
10+ | 228.39 грн |
240+ | 146.71 грн |
BCR430UXTSA1 |
Виробник: Infineon Technologies
Description: IC LED DRV LIN PWM 100MA SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 42V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 100mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: PG-SOT23-6-1
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42V
Description: IC LED DRV LIN PWM 100MA SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 42V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 100mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: PG-SOT23-6-1
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42V
товар відсутній
IPD60R280CFD7ATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 400 V
Description: MOSFET N-CH 600V 9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 400 V
на замовлення 4881 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 155.62 грн |
10+ | 124.76 грн |
100+ | 99.31 грн |
500+ | 78.86 грн |
1000+ | 66.91 грн |
IPL60R185CFD7AUMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 14A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
Description: MOSFET N-CH 600V 14A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
на замовлення 2973 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 211.65 грн |
10+ | 169.49 грн |
100+ | 134.89 грн |
500+ | 107.11 грн |
1000+ | 90.88 грн |