Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136442) > Сторінка 28 з 2275
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IPB14N03LA | Infineon Technologies |
 Description: MOSFET N-CH 25V 30A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 13.6mOhm @ 30A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: PG-TO263-3-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 15 V |
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BSP171PE6327 | Infineon Technologies |
Description: MOSFET P-CH 60V 1.9A SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 1.9A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 2V @ 460µA Supplier Device Package: PG-SOT223-4 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V |
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BSS223PW L6327 | Infineon Technologies |
Description: MOSFET P-CH 20V 390MA SOT323-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 390mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 390mA, 4.5V Power Dissipation (Max): 250mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 1.5µA Supplier Device Package: PG-SOT323 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 15 V |
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BSS209PW | Infineon Technologies |
Description: MOSFET P-CH 20V 580MA SOT323-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 580mA (Ta) Rds On (Max) @ Id, Vgs: 550mOhm @ 580mA, 4.5V Power Dissipation (Max): 520mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 3.5µA Supplier Device Package: PG-SOT323 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.38 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 89.9 pF @ 15 V |
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BSS192PE6327 | Infineon Technologies |
Description: MOSFET P-CH 250V 190MA SOT89 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 190mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 130µA Supplier Device Package: PG-SOT89 Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V |
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BSP317PE6327 | Infineon Technologies |
Description: MOSFET P-CH 250V 430MA SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 430mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 430mA, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 2V @ 370µA Supplier Device Package: PG-SOT223-4 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 25 V |
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BSP316PE6327 | Infineon Technologies |
Description: MOSFET P-CH 100V 680MA SOT223-4 |
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BSP170PE6327 | Infineon Technologies |
Description: MOSFET P-CH 60V 1.9A SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 1.9A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-SOT223-4 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V |
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BSO615CGHUMA1 | Infineon Technologies |
Description: MOSFET N/P-CH 60V 3.1A/2A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.1A, 2A Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Rds On (Max) @ Id, Vgs: 110mOhm @ 3.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: PG-DSO-8 Part Status: Obsolete |
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BSO615N | Infineon Technologies |
Description: MOSFET 2N-CH 60V 2.6A 8DSO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.6A Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: PG-DSO-8 |
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BSS83PE6327 | Infineon Technologies |
Description: MOSFET P-CH 60V 330MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 330mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 80µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 3.57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V |
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BSO612CV | Infineon Technologies |
Description: MOSFET N/P-CH 60V 3A/2A 8SOIC |
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BSO4822 | Infineon Technologies |
Description: MOSFET N-CH 30V 12.7A 8-SOIC |
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BSO4804 | Infineon Technologies |
Description: MOSFET 2N-CH 30V 8A 8SOIC |
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BSO4420 | Infineon Technologies |
Description: MOSFET N-CH 30V 13A 8SO |
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BSO215C | Infineon Technologies |
Description: MOSFET N/P-CH 20V 3.7A 8SOIC |
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BSO4410 | Infineon Technologies |
Description: MOSFET N-CH 30V 11.1A 8SO |
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BSS670S2L | Infineon Technologies |
Description: MOSFET N-CH 55V 540MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) Rds On (Max) @ Id, Vgs: 650mOhm @ 270mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 2.7µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 2.26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V |
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IPB04N03LA | Infineon Technologies |
Description: MOSFET N-CH 25V 80A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 55A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2V @ 60µA Supplier Device Package: PG-TO263-3-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3877 pF @ 15 V |
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IPB09N03LA | Infineon Technologies |
Description: MOSFET N-CH 25V 50A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 30A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: PG-TO263-3-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1642 pF @ 15 V |
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BSL211SP | Infineon Technologies |
Description: MOSFET P-CH 20V 4.7A TSOP-6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 25µA Supplier Device Package: PG-TSOP6-6 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 15 V |
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IPB06N03LA | Infineon Technologies |
Description: MOSFET N-CH 25V 50A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 40µA Supplier Device Package: PG-TO263-3-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V |
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IPB05N03LA | Infineon Technologies |
Description: MOSFET N-CH 25V 80A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 55A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 15 V |
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BSL307SP | Infineon Technologies |
Description: MOSFET P-CH 30V 5.5A TSOP-6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2V @ 40µA Supplier Device Package: PG-TSOP6-6 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 25 V |
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IPI04N03LA | Infineon Technologies |
Description: MOSFET N-CH 25V 80A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 55A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2V @ 60µA Supplier Device Package: PG-TO262-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3877 pF @ 15 V |
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BSO211PNTMA1 | Infineon Technologies |
Description: MOSFET 2P-CH 20V 4.7A 8DSO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.7A Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 23.9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 25µA Supplier Device Package: PG-DSO-8 |
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BSO203PNTMA1 | Infineon Technologies |
Description: MOSFET 2P-CH 20V 8.2A 8SOIC |
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BSO207PNTMA1 | Infineon Technologies |
Description: MOSFET 2P-CH 20V 5.7A 8SOIC |
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TDA21201-B7 | Infineon Technologies |
Description: IC HALF BRIDGE DRVR 30A TO263-7 Packaging: Tape & Reel (TR) Features: Bootstrap Circuit Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Interface: PWM Operating Temperature: -25°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 9V ~ 15V Rds On (Typ): 4.8mOhm LS, 13.3mOhm HS Applications: Synchronous Buck Converters Current - Output / Channel: 30A Technology: Power MOSFET Voltage - Load: 9V ~ 15V Supplier Device Package: PG-TO263-7-2 Fault Protection: Over Temperature, Shoot-Through, UVLO Load Type: Inductive Part Status: Obsolete |
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BSO204PNTMA1 | Infineon Technologies |
Description: MOSFET 2P-CH 20V 7A 8DSO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Input Capacitance (Ciss) (Max) @ Vds: 1513pF @ 15V Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 35.8nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 60µA Supplier Device Package: PG-DSO-8 Part Status: Obsolete |
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BSO203SPNTMA1 | Infineon Technologies |
Description: MOSFET P-CH 20V 9A 8DSO |
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SPP35N10 | Infineon Technologies |
Description: MOSFET N-CH 100V 35A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 26.4A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 83µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V |
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SPA11N60C3IN | Infineon Technologies |
Description: MOSFET N-CH 650V 11A TO220-3-31 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 500µA Supplier Device Package: PG-TO220-3-31 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
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SPP11N60C3XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 11A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 500µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
на замовлення 895 шт: термін постачання 21-31 дні (днів) |
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SPP42N03S2L-13 | Infineon Technologies |
Description: MOSFET N-CH 30V 42A TO220-3 |
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SPP73N03S2L08XK | Infineon Technologies |
Description: MOSFET N-CH 30V 73A TO220-3 |
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SPW16N50C3FKSA1 | Infineon Technologies |
Description: MOSFET N-CH 560V 16A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 675µA Supplier Device Package: PG-TO247-3-1 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 560 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
на замовлення 184 шт: термін постачання 21-31 дні (днів) |
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SPP80P06PBKSA1 | Infineon Technologies |
Description: MOSFET P-CH 60V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 64A, 10V Power Dissipation (Max): 340W (Tc) Vgs(th) (Max) @ Id: 4V @ 5.5mA Supplier Device Package: PG-TO220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5033 pF @ 25 V |
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SPU08P06P | Infineon Technologies |
Description: MOSFET P-CH 60V 8.83A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.83A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 6.2A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO251-3 Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V |
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SPU30N03S2L-10 | Infineon Technologies |
Description: MOSFET N-CH 30V 30A TO-251 |
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SPP02N80C3XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 2A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.2A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 120µA Supplier Device Package: PG-TO220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V |
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SPW12N50C3FKSA1 | Infineon Technologies |
Description: MOSFET N-CH 560V 11.6A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 500µA Supplier Device Package: PG-TO247-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 560 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
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SPW17N80C3FKSA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 17A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 1mA Supplier Device Package: PG-TO247-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 25 V |
на замовлення 653 шт: термін постачання 21-31 дні (днів) |
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SPP80N03S2L05AKSA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 55A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 110µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 89.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 25 V |
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SPW21N50C3FKSA1 | Infineon Technologies |
Description: MOSFET N-CH 560V 21A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 1mA Supplier Device Package: PG-TO247-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 560 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V |
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TDA21201-P7 | Infineon Technologies |
Description: IC HALF BRIDGE DRVR 30A TO220-7 Packaging: Tube Features: Bootstrap Circuit Package / Case: TO-220-7 Mounting Type: Through Hole Interface: PWM Operating Temperature: -25°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 9V ~ 15V Rds On (Typ): 4.8mOhm LS, 13.3mOhm HS Applications: Synchronous Buck Converters Current - Output / Channel: 30A Technology: Power MOSFET Voltage - Load: 9V ~ 15V Supplier Device Package: P-TO220-7-3 Fault Protection: Over Temperature, Shoot-Through, UVLO Load Type: Inductive Part Status: Obsolete |
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SPP80N03S2L-06 | Infineon Technologies |
Description: MOSFET N-CH 30V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 80µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V |
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SPP100N03S2L-03 | Infineon Technologies |
Description: MOSFET N-CH 30V 100A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V |
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SPA04N80C3XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 4A TO220-FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 240µA Supplier Device Package: PG-TO220-3-31 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V |
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SPP100N03S2-03 | Infineon Technologies |
Description: MOSFET N-CH 30V 100A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V |
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IPU09N03LA G | Infineon Technologies |
Description: MOSFET N-CH 25V 50A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 30A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: PG-TO251-3-21 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1642 pF @ 15 V |
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IPP03N03LA | Infineon Technologies |
Description: MOSFET N-CH 25V 80A TO220-3 Packaging: Tape & Box (TB) Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 55A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 100µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 7027 pF @ 15 V |
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IPU06N03LAGXK | Infineon Technologies |
Description: MOSFET N-CH 25V 50A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 40µA Supplier Device Package: P-TO251-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V |
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IPU07N03LA | Infineon Technologies |
Description: MOSFET N-CH 25V 30A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 40µA Supplier Device Package: P-TO251-3-1 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V |
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SDP20S30 | Infineon Technologies |
Description: DIODE ARRAY SCHOTTKY 300V TO220 |
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IPU13N03LA G | Infineon Technologies |
Description: MOSFET N-CH 25V 30A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 12.8mOhm @ 30A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: P-TO251-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 15 V |
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IPP09N03LA | Infineon Technologies |
Description: MOSFET N-CH 25V 50A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: PG-TO220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1642 pF @ 15 V |
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SDT04S60 | Infineon Technologies |
 Description: DIODE SIL CARB 600V 4A TO220-2-2Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 150pF @ 0V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: PG-TO220-2-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A Current - Reverse Leakage @ Vr: 200 µA @ 600 V |
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SDT10S30 | Infineon Technologies |
Description: DIODE SCHOTTKY 300V 10A TO220-2 |
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IPP14N03LA | Infineon Technologies |
Description: MOSFET N-CH 25V 30A TO220-3 |
товар відсутній |
| IPB14N03LA |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 30A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 30A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 15 V
Description: MOSFET N-CH 25V 30A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 30A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 15 V
товар відсутній
| BSP171PE6327 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 460µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 460µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
товар відсутній
| BSS223PW L6327 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 390MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 390mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 390mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
Supplier Device Package: PG-SOT323
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 15 V
Description: MOSFET P-CH 20V 390MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 390mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 390mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
Supplier Device Package: PG-SOT323
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 15 V
товар відсутній
| BSS209PW |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 580MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 580mA (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 580mA, 4.5V
Power Dissipation (Max): 520mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 3.5µA
Supplier Device Package: PG-SOT323
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 89.9 pF @ 15 V
Description: MOSFET P-CH 20V 580MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 580mA (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 580mA, 4.5V
Power Dissipation (Max): 520mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 3.5µA
Supplier Device Package: PG-SOT323
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 89.9 pF @ 15 V
товар відсутній
| BSS192PE6327 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 250V 190MA SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 190mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-SOT89
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
Description: MOSFET P-CH 250V 190MA SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 190mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-SOT89
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
товар відсутній
| BSP317PE6327 |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 250V 430MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 430mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 370µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 25 V
Description: MOSFET P-CH 250V 430MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 430mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 370µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 25 V
товар відсутній
| BSP316PE6327 |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 680MA SOT223-4
Description: MOSFET P-CH 100V 680MA SOT223-4
товар відсутній
| BSP170PE6327 |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
товар відсутній
| BSO615CGHUMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 60V 3.1A/2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2A
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Description: MOSFET N/P-CH 60V 3.1A/2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2A
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
товар відсутній
| BSO615N |
|
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 60V 2.6A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-DSO-8
Description: MOSFET 2N-CH 60V 2.6A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-DSO-8
товар відсутній
| BSS83PE6327 |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 330MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 330mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V
Description: MOSFET P-CH 60V 330MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 330mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V
товар відсутній
| BSS670S2L |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 540MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 270mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 2.7µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 2.26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
Description: MOSFET N-CH 55V 540MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 270mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 2.7µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 2.26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
товар відсутній
| IPB04N03LA |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 55A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3877 pF @ 15 V
Description: MOSFET N-CH 25V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 55A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3877 pF @ 15 V
товар відсутній
| IPB09N03LA |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 30A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1642 pF @ 15 V
Description: MOSFET N-CH 25V 50A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 30A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1642 pF @ 15 V
товар відсутній
| BSL211SP |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 4.7A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: PG-TSOP6-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 15 V
Description: MOSFET P-CH 20V 4.7A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: PG-TSOP6-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 15 V
товар відсутній
| IPB06N03LA |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V
Description: MOSFET N-CH 25V 50A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V
товар відсутній
| IPB05N03LA |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 55A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 15 V
Description: MOSFET N-CH 25V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 55A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 15 V
товар відсутній
| BSL307SP |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 5.5A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TSOP6-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 25 V
Description: MOSFET P-CH 30V 5.5A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TSOP6-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 25 V
товар відсутній
| IPI04N03LA |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 55A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 60µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3877 pF @ 15 V
Description: MOSFET N-CH 25V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 55A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 60µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3877 pF @ 15 V
товар відсутній
| BSO211PNTMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 20V 4.7A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: PG-DSO-8
Description: MOSFET 2P-CH 20V 4.7A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: PG-DSO-8
товар відсутній
| BSO203PNTMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 20V 8.2A 8SOIC
Description: MOSFET 2P-CH 20V 8.2A 8SOIC
товар відсутній
| BSO207PNTMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 20V 5.7A 8SOIC
Description: MOSFET 2P-CH 20V 5.7A 8SOIC
товар відсутній
| TDA21201-B7 |
|
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 30A TO263-7
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 9V ~ 15V
Rds On (Typ): 4.8mOhm LS, 13.3mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Technology: Power MOSFET
Voltage - Load: 9V ~ 15V
Supplier Device Package: PG-TO263-7-2
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Obsolete
Description: IC HALF BRIDGE DRVR 30A TO263-7
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 9V ~ 15V
Rds On (Typ): 4.8mOhm LS, 13.3mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Technology: Power MOSFET
Voltage - Load: 9V ~ 15V
Supplier Device Package: PG-TO263-7-2
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Obsolete
товар відсутній
| BSO204PNTMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 20V 7A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1513pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 35.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 60µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Description: MOSFET 2P-CH 20V 7A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1513pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 35.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 60µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
товар відсутній
| SPP35N10 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 35A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 26.4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Description: MOSFET N-CH 100V 35A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 26.4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
товар відсутній
| SPA11N60C3IN |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO220-3-31
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-31
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET N-CH 650V 11A TO220-3-31
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-31
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
товар відсутній
| SPP11N60C3XKSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET N-CH 650V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
на замовлення 895 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 232.19 грн |
| 50+ | 177.19 грн |
| 100+ | 151.87 грн |
| 500+ | 126.69 грн |
| SPP42N03S2L-13 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 42A TO220-3
Description: MOSFET N-CH 30V 42A TO220-3
товар відсутній
| SPP73N03S2L08XK |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 73A TO220-3
Description: MOSFET N-CH 30V 73A TO220-3
товар відсутній
| SPW16N50C3FKSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 560V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 560V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
на замовлення 184 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 191.48 грн |
| 30+ | 146.09 грн |
| 120+ | 125.21 грн |
| SPP80P06PBKSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 64A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5.5mA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5033 pF @ 25 V
Description: MOSFET P-CH 60V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 64A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5.5mA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5033 pF @ 25 V
товар відсутній
| SPU08P06P |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 8.83A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.83A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.2A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO251-3
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Description: MOSFET P-CH 60V 8.83A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.83A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.2A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO251-3
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
товар відсутній
| SPU30N03S2L-10 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO-251
Description: MOSFET N-CH 30V 30A TO-251
товар відсутній
| SPP02N80C3XKSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.2A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
Description: MOSFET N-CH 800V 2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.2A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
товар відсутній
| SPW12N50C3FKSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 560V 11.6A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET N-CH 560V 11.6A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
товар відсутній
| SPW17N80C3FKSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO247-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 25 V
Description: MOSFET N-CH 800V 17A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO247-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 25 V
на замовлення 653 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 368.64 грн |
| 30+ | 280.97 грн |
| 120+ | 240.82 грн |
| 510+ | 200.89 грн |
| SPP80N03S2L05AKSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 55A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 110µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 89.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 25 V
Description: MOSFET N-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 55A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 110µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 89.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 25 V
товар відсутній
| SPW21N50C3FKSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 560V 21A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Description: MOSFET N-CH 560V 21A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
товар відсутній
| TDA21201-P7 |
|
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 30A TO220-7
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: TO-220-7
Mounting Type: Through Hole
Interface: PWM
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 9V ~ 15V
Rds On (Typ): 4.8mOhm LS, 13.3mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Technology: Power MOSFET
Voltage - Load: 9V ~ 15V
Supplier Device Package: P-TO220-7-3
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Obsolete
Description: IC HALF BRIDGE DRVR 30A TO220-7
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: TO-220-7
Mounting Type: Through Hole
Interface: PWM
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 9V ~ 15V
Rds On (Typ): 4.8mOhm LS, 13.3mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Technology: Power MOSFET
Voltage - Load: 9V ~ 15V
Supplier Device Package: P-TO220-7-3
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Obsolete
товар відсутній
| SPP80N03S2L-06 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
Description: MOSFET N-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
товар відсутній
| SPP100N03S2L-03 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Description: MOSFET N-CH 30V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
товар відсутній
| SPA04N80C3XKSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO220-3-31
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
Description: MOSFET N-CH 800V 4A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO220-3-31
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
товар відсутній
| SPP100N03S2-03 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
Description: MOSFET N-CH 30V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
товар відсутній
| IPU09N03LA G |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 30A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO251-3-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1642 pF @ 15 V
Description: MOSFET N-CH 25V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 30A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO251-3-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1642 pF @ 15 V
товар відсутній
| IPP03N03LA |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 80A TO220-3
Packaging: Tape & Box (TB)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7027 pF @ 15 V
Description: MOSFET N-CH 25V 80A TO220-3
Packaging: Tape & Box (TB)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7027 pF @ 15 V
товар відсутній
| IPU06N03LAGXK |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: P-TO251-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V
Description: MOSFET N-CH 25V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: P-TO251-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V
товар відсутній
| IPU07N03LA |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 30A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: P-TO251-3-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V
Description: MOSFET N-CH 25V 30A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: P-TO251-3-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V
товар відсутній
| SDP20S30 |
|
Виробник: Infineon Technologies
Description: DIODE ARRAY SCHOTTKY 300V TO220
Description: DIODE ARRAY SCHOTTKY 300V TO220
товар відсутній
| IPU13N03LA G |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 30A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 30A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: P-TO251-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 15 V
Description: MOSFET N-CH 25V 30A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 30A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: P-TO251-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 15 V
товар відсутній
| IPP09N03LA |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1642 pF @ 15 V
Description: MOSFET N-CH 25V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1642 pF @ 15 V
товар відсутній
| SDT04S60 | |
|
Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 4A TO220-2-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 150pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Description: DIODE SIL CARB 600V 4A TO220-2-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 150pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
товар відсутній
| SDT10S30 | |
|
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 300V 10A TO220-2
Description: DIODE SCHOTTKY 300V 10A TO220-2
товар відсутній