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BAT6404WE6327HTSA1 BAT6404WE6327HTSA1 Infineon Technologies INFNS11551-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOT 40V 250MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BCX5310E6327HTSA1 BCX5310E6327HTSA1 Infineon Technologies bcx51_bcx52_bcx53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589c08423034d&location=.en.product.findProductTypeByName.html_dgdl_bcx51_bcx52_bcx53.pdf Description: TRANS PNP 80V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
товар відсутній
BCX5410E6327 BCX5410E6327 Infineon Technologies bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368&location=.en.product.findProductTypeByName.html_dgdl_bcx54_bcx55_bcx56.pdf Description: TRANS NPN 45V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
товар відсутній
BCX6916E6327HTSA1 BCX6916E6327HTSA1 Infineon Technologies bcx69.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589f3f56603ee&location=.en.product.findProductTypeByName.html_dgdl_bcx69.pdf Description: TRANS PNP 20V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
товар відсутній
BAS21E6327HTSA1 BAS21E6327HTSA1 Infineon Technologies bas21series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141bed353f040f Description: DIODE GEN PURP 200V 250MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
на замовлення 93251 шт:
термін постачання 21-31 дні (днів)
12+25.85 грн
18+ 16.69 грн
100+ 8.16 грн
500+ 6.39 грн
1000+ 4.44 грн
Мінімальне замовлення: 12
BAV170E6327HTSA1 BAV170E6327HTSA1 Infineon Technologies bav170series.pdf?folderId=db3a30431400ef6801141c748874044e&fileId=db3a30431400ef6801141cb8e81404e3 Description: DIODE ARRAY GP 80V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
на замовлення 64551 шт:
термін постачання 21-31 дні (днів)
12+26.61 грн
17+ 17.5 грн
100+ 8.53 грн
500+ 6.68 грн
1000+ 4.64 грн
Мінімальне замовлення: 12
BAV199E6327HTSA1 BAV199E6327HTSA1 Infineon Technologies bav199series.pdf?folderId=db3a30431400ef6801141c748874044e&fileId=db3a30431400ef6801141cba733104e5 Description: DIODE ARRAY GP 80V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
на замовлення 744063 шт:
термін постачання 21-31 дні (днів)
15+21.29 грн
24+ 12.3 грн
100+ 7.69 грн
500+ 5.32 грн
1000+ 4.71 грн
Мінімальне замовлення: 15
BAV70E6327HTSA1 BAV70E6327HTSA1 Infineon Technologies bav70series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141c0ba40e041d Description: DIODE ARRAY GP 80V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
на замовлення 57211 шт:
термін постачання 21-31 дні (днів)
14+22.81 грн
20+ 15.23 грн
100+ 7.43 грн
Мінімальне замовлення: 14
BB535E7908HTSA1 BB535E7908HTSA1 Infineon Technologies BB535%2CBB555_Series.pdf Description: DIODE VARACTOR 30V SOD-323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.3pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-3D
Part Status: Obsolete
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 9.8
товар відсутній
BB639E7908 BB639E7908 Infineon Technologies bb639_bb659series.pdf?folderId=db3a304313d846880113d98def1d0130&fileId=db3a304313d846880113d9bc2d2e015e Description: DIODE VARACTOR 30V SOD-323
Packaging: Cut Tape (CT)
товар відсутній
BB833E6327HTSA1 BB833E6327HTSA1 Infineon Technologies bb833series.pdf?folderId=db3a304313d846880113d94414f400fc&fileId=db3a304313d846880113d969a38b0112 Description: DIODE VARACTOR 30V SOD-323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-3D
Part Status: Obsolete
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 12.4
товар відсутній
BC847AE6327HTSA1 BC847AE6327HTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: BJT SOT23 45V NPN 0.25W 150C
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
товар відсутній
BC847CE6327HTSA1 BC847CE6327HTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: BJT SOT23 45V NPN 0.25W 150C
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
на замовлення 12313 шт:
термін постачання 21-31 дні (днів)
17+18.25 грн
28+ 10.62 грн
100+ 6.63 грн
500+ 4.57 грн
1000+ 4.04 грн
Мінімальне замовлення: 17
BC857CE6327HTSA1 BC857CE6327HTSA1 Infineon Technologies Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Description: BJT SOT23 45V PNP 0.25W 150C
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 6485 шт:
термін постачання 21-31 дні (днів)
16+19.77 грн
26+ 11.49 грн
100+ 7.18 грн
500+ 4.96 грн
1000+ 4.38 грн
Мінімальне замовлення: 16
BCR133E6327HTSA1 BCR133E6327HTSA1 Infineon Technologies bcr133series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7f8a3f0288 Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 130 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 52484 шт:
термін постачання 21-31 дні (днів)
16+19.77 грн
26+ 11.57 грн
100+ 7.23 грн
500+ 5 грн
1000+ 4.42 грн
Мінімальне замовлення: 16
BCV46E6327HTSA1 BCV46E6327HTSA1 Infineon Technologies Infineon-BCV26_BCV46-DS-v01_01-en.pdf?fileId=db3a30431441fb5d011445cddad90187 Description: TRANS PNP DARL 60V 0.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
товар відсутній
BCV47E6327HTSA1 BCV47E6327HTSA1 Infineon Technologies bcv27_bcv47.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445cf7c3b0188 Description: TRANS NPN DARL 60V 0.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
на замовлення 3507 шт:
термін постачання 21-31 дні (днів)
12+27.37 грн
19+ 16.18 грн
100+ 10.17 грн
500+ 7.1 грн
1000+ 6.32 грн
Мінімальне замовлення: 12
BCX70KE6327HTSA1 BCX70KE6327HTSA1 Infineon Technologies BCW60%2C%20BCX70%20Rev2007.pdf Description: TRANS NPN 45V 0.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 50475 шт:
термін постачання 21-31 дні (днів)
12+26.61 грн
17+ 17.5 грн
100+ 8.53 грн
500+ 6.67 грн
1000+ 4.64 грн
Мінімальне замовлення: 12
BFP405E6327BTSA1 BFP405E6327BTSA1 Infineon Technologies BFP405_Rev2013.pdf Description: RF TRANS NPN 5V 25GHZ SOT343-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 23dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
товар відсутній
BFP450E6327BTSA1 BFP450E6327BTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: RF TRANS NPN 5V 24GHZ SOT343-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15.5dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V
Frequency - Transition: 24GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
товар відсутній
BGX50AE6327HTSA1 BGX50AE6327HTSA1 Infineon Technologies bgx50aseries.pdf?folderId=db3a30431400ef6801141cc1c4cd04e8&fileId=db3a30431400ef6801141cc423c404e9 Description: BRIDGE RECT 1P 70V 140MA SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Standard
Supplier Device Package: PG-SOT-143-3D
Part Status: Last Time Buy
Voltage - Peak Reverse (Max): 70 V
Current - Average Rectified (Io): 140 mA
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 500 V
на замовлення 221447 шт:
термін постачання 21-31 дні (днів)
10+31.93 грн
13+ 23.36 грн
100+ 14.03 грн
500+ 12.19 грн
1000+ 8.29 грн
Мінімальне замовлення: 10
SMBD914E6327HTSA1 SMBD914E6327HTSA1 Infineon Technologies smbd914_mmbd914series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141c419bed0444 Description: DIODE GEN PURP 100V 250MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
на замовлення 52504 шт:
термін постачання 21-31 дні (днів)
13+24.33 грн
19+ 16.18 грн
100+ 7.87 грн
500+ 6.16 грн
1000+ 4.28 грн
Мінімальне замовлення: 13
SMBT2222AE6327HTSA1 SMBT2222AE6327HTSA1 Infineon Technologies smbt2222a_mmbt2222a.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d011445fbaff0018f Description: TRANS NPN 40V 0.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 330 mW
на замовлення 351899 шт:
термін постачання 21-31 дні (днів)
14+22.05 грн
24+ 12.59 грн
100+ 7.87 грн
500+ 5.46 грн
1000+ 4.83 грн
Мінімальне замовлення: 14
SMBT2907AE6327HTSA1 SMBT2907AE6327HTSA1 Infineon Technologies smbt2907a.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d011445fe084a0190 Description: TRANS PNP 60V 0.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 330 mW
на замовлення 931 шт:
термін постачання 21-31 дні (днів)
14+22.05 грн
24+ 12.59 грн
100+ 7.87 грн
500+ 5.46 грн
Мінімальне замовлення: 14
SMBT3904E6327HTSA1 SMBT3904E6327HTSA1 Infineon Technologies smbt3904series_mmbt3904.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d0114460005c10191 Description: TRANS NPN 40V 0.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 330 mW
на замовлення 225221 шт:
термін постачання 21-31 дні (днів)
11+28.13 грн
16+ 18.6 грн
100+ 9.07 грн
500+ 7.1 грн
1000+ 4.93 грн
Мінімальне замовлення: 11
SMBT3906E6327HTSA1 SMBT3906E6327HTSA1 Infineon Technologies smbt3906series_mmbt3906.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d01144604610f0192 Description: TRANS PNP 40V 0.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 330 mW
на замовлення 38529 шт:
термін постачання 21-31 дні (днів)
13+25.09 грн
18+ 16.99 грн
100+ 8.58 грн
500+ 6.57 грн
1000+ 4.87 грн
Мінімальне замовлення: 13
SMBTA14E6327HTSA1 SMBTA14E6327HTSA1 Infineon Technologies smbta14_mmbta14.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445ef0201018c Description: TRANS NPN DARL 30V 0.3A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT23
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
товар відсутній
SMBTA64E6327 SMBTA64E6327 Infineon Technologies smbta64.pdf Description: TRANS PNP DARL 30V 0.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
товар відсутній
SMBTA92E6327HTSA1 SMBTA92E6327HTSA1 Infineon Technologies smbta92-mmbta92.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449c5cd03023b Description: TRANS PNP 300V 0.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
товар відсутній
BAS16E6327HTSA1 BAS16E6327HTSA1 Infineon Technologies bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff Description: DIODE GEN PURP 80V 250MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 9428 шт:
термін постачання 21-31 дні (днів)
16+19.77 грн
23+ 12.96 грн
100+ 6.34 грн
500+ 4.96 грн
1000+ 3.45 грн
Мінімальне замовлення: 16
BAS4004E6327HTSA1 BAS4004E6327HTSA1 Infineon Technologies INFNS19700-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 47859 шт:
термін постачання 21-31 дні (днів)
12+25.85 грн
16+ 19.11 грн
100+ 11.47 грн
500+ 9.96 грн
1000+ 6.77 грн
Мінімальне замовлення: 12
BAS4005E6327HTSA1 BAS4005E6327HTSA1 Infineon Technologies INFNS19700-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 44083 шт:
термін постачання 21-31 дні (днів)
12+25.85 грн
16+ 19.11 грн
100+ 11.47 грн
500+ 9.96 грн
1000+ 6.77 грн
Мінімальне замовлення: 12
BAS4006E6327HTSA1 BAS4006E6327HTSA1 Infineon Technologies INFNS19700-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 23610 шт:
термін постачання 21-31 дні (днів)
17+18.25 грн
22+ 13.4 грн
100+ 8.05 грн
500+ 7 грн
1000+ 4.93 грн
Мінімальне замовлення: 17
BAS40E6327HTSA1 BAS40E6327HTSA1 Infineon Technologies INFNS19700-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 40V 120MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 21298 шт:
термін постачання 21-31 дні (днів)
10+31.17 грн
14+ 21.67 грн
100+ 10.95 грн
500+ 9.11 грн
1000+ 7.09 грн
Мінімальне замовлення: 10
BAS7004E6327HTSA1 BAS7004E6327HTSA1 Infineon Technologies INFNS30154-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 70V 70MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 45406 шт:
термін постачання 21-31 дні (днів)
12+25.85 грн
16+ 19.11 грн
100+ 11.47 грн
500+ 9.96 грн
1000+ 6.77 грн
Мінімальне замовлення: 12
BAS7005E6327HTSA1 BAS7005E6327HTSA1 Infineon Technologies INFNS30154-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 70V 70MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 71121 шт:
термін постачання 21-31 дні (днів)
12+25.85 грн
16+ 19.11 грн
100+ 11.47 грн
500+ 9.96 грн
1000+ 6.77 грн
Мінімальне замовлення: 12
BAS70E6327HTSA1 BAS70E6327HTSA1 Infineon Technologies INFNS30154-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 70V 70MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 28898 шт:
термін постачання 21-31 дні (днів)
10+32.69 грн
13+ 22.7 грн
100+ 11.44 грн
500+ 9.52 грн
1000+ 7.41 грн
Мінімальне замовлення: 10
BAT6404WE6327HTSA1 BAT6404WE6327HTSA1 Infineon Technologies INFNS11551-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOT 40V 250MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BCX5310E6327HTSA1 BCX5310E6327HTSA1 Infineon Technologies bcx51_bcx52_bcx53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589c08423034d&location=.en.product.findProductTypeByName.html_dgdl_bcx51_bcx52_bcx53.pdf Description: TRANS PNP 80V 1A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
товар відсутній
BCX5410E6327 BCX5410E6327 Infineon Technologies bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368&location=.en.product.findProductTypeByName.html_dgdl_bcx54_bcx55_bcx56.pdf Description: TRANS NPN 45V 1A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
товар відсутній
BCX6916E6327HTSA1 BCX6916E6327HTSA1 Infineon Technologies bcx69.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589f3f56603ee&location=.en.product.findProductTypeByName.html_dgdl_bcx69.pdf Description: TRANS PNP 20V 1A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
товар відсутній
IRF6607 IRF6607 Infineon Technologies IRF6607.pdf Description: MOSFET N-CH 30V 27A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 94A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Power Dissipation (Max): 3.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DIRECTFET™ MT
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 15 V
товар відсутній
IRLR7833 IRLR7833 Infineon Technologies IRLR7833%2C%20IRLU7833.pdf Description: MOSFET N-CH 30V 140A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 15 V
на замовлення 13041 шт:
термін постачання 21-31 дні (днів)
2+157.38 грн
75+ 121.72 грн
150+ 119.15 грн
525+ 106.99 грн
1050+ 106.19 грн
Мінімальне замовлення: 2
IRLU7833 IRLU7833 Infineon Technologies IRLR7833%2C%20IRLU7833.pdf Description: MOSFET N-CH 30V 140A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
товар відсутній
IRF6603 IRF6603 Infineon Technologies IRF6603.pdf Description: MOSFET N-CH 30V 27A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 92A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Power Dissipation (Max): 3.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DIRECTFET™ MT
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6590 pF @ 15 V
товар відсутній
IP1001 IP1001 Infineon Technologies ip1001.pdf Description: IC REG BUCK ADJ 20A 218BGA
товар відсутній
IP1001TR IP1001TR Infineon Technologies ip1001.pdf Description: IC REG BUCK ADJ 20A 218BGA
товар відсутній
IRFL4315 IRFL4315 Infineon Technologies irfl4315pbf.pdf?fileId=5546d462533600a4015356280dbc1fbe Description: MOSFET N-CH 150V 2.6A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1.6A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
товар відсутній
IRF6156 Infineon Technologies irf6156.pdf Description: MOSFET 2N-CH 20V 6.5A FLIP-FET
Packaging: Bulk
Package / Case: 6-FlipFet™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-FlipFet™
Part Status: Discontinued at Digi-Key
товар відсутній
BSP742TXUMA1 BSP742TXUMA1 Infineon Technologies Infineon-BSP742T-DS-v01_03-EN.pdf?fileId=5546d4625a888733015aae0b51d34c49 Description: IC PWR SWITCH N-CHAN 1:1 PDSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 260mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 800mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-6
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 22455 шт:
термін постачання 21-31 дні (днів)
3+127.73 грн
10+ 110.19 грн
25+ 103.94 грн
100+ 83.11 грн
250+ 78.04 грн
500+ 68.29 грн
1000+ 55.65 грн
Мінімальне замовлення: 3
BSP742TXUMA1 BSP742TXUMA1 Infineon Technologies Infineon-BSP742T-DS-v01_03-EN.pdf?fileId=5546d4625a888733015aae0b51d34c49 Description: IC PWR SWITCH N-CHAN 1:1 PDSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 260mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 800mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-6
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
2500+58.29 грн
5000+ 54.05 грн
12500+ 51.97 грн
Мінімальне замовлення: 2500
BSP76 E6327 BSP76 E6327 Infineon Technologies Infineon-BSP76-DS-v01_03-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a3043271faefd01274d00e2695d45&ack=t Description: IC PWR DRVR N-CHAN 1:1 SOT223-4
товар відсутній
BSP76 E6327 BSP76 E6327 Infineon Technologies Infineon-BSP76-DS-v01_03-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a3043271faefd01274d00e2695d45&ack=t Description: IC PWR DRVR N-CHAN 1:1 SOT223-4
товар відсутній
BTS115ANKSA1 BTS115ANKSA1 Infineon Technologies BTS115A II.pdf Description: MOSFET N-CH 50V 15.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 4.5V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 25 V
товар відсутній
BTS117 BTS117 Infineon Technologies BTS117.pdf description Description: IC PWR SWITCH N-CHAN 1:1 TO220-3
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-5
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
товар відсутній
BTS121ANKSA1 BTS121ANKSA1 Infineon Technologies BTS121A.pdf Description: MOSFET N-CH 100V 22A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
товар відсутній
BTS133 BTS133 Infineon Technologies BTS133.pdf description Description: IC PWR DRIVER N-CHAN 1:1 TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
товар відсутній
BTS141 BTS141 Infineon Technologies BTS141_TO_220.pdf description Description: IC PWR DRIVER N-CHAN 1:1 TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 25mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
товар відсутній
BTS282Z E3180A BTS282Z E3180A Infineon Technologies BTS282Z.pdf Description: MOSFET N-CH 49V 80A TO220-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 240µA
Supplier Device Package: PG-TO220-7-180
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 49 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
товар відсутній
BTS409L1 BTS409L1 Infineon Technologies Infineon-BTS409L1%20E3062A-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9b0a1b7361a Description: IC PWR SWITCH N-CHAN 1:1 TO220-5
Features: Auto Restart, Status Flag
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: P-TO220-5-3
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Discontinued at Digi-Key
товар відсутній
BAT6404WE6327HTSA1 INFNS11551-1.pdf?t.download=true&u=5oefqw
BAT6404WE6327HTSA1
Виробник: Infineon Technologies
Description: DIODE ARR SCHOT 40V 250MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BCX5310E6327HTSA1 bcx51_bcx52_bcx53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589c08423034d&location=.en.product.findProductTypeByName.html_dgdl_bcx51_bcx52_bcx53.pdf
BCX5310E6327HTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 80V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
товар відсутній
BCX5410E6327 bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368&location=.en.product.findProductTypeByName.html_dgdl_bcx54_bcx55_bcx56.pdf
BCX5410E6327
Виробник: Infineon Technologies
Description: TRANS NPN 45V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
товар відсутній
BCX6916E6327HTSA1 bcx69.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589f3f56603ee&location=.en.product.findProductTypeByName.html_dgdl_bcx69.pdf
BCX6916E6327HTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 20V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
товар відсутній
BAS21E6327HTSA1 bas21series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141bed353f040f
BAS21E6327HTSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 200V 250MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
на замовлення 93251 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+25.85 грн
18+ 16.69 грн
100+ 8.16 грн
500+ 6.39 грн
1000+ 4.44 грн
Мінімальне замовлення: 12
BAV170E6327HTSA1 bav170series.pdf?folderId=db3a30431400ef6801141c748874044e&fileId=db3a30431400ef6801141cb8e81404e3
BAV170E6327HTSA1
Виробник: Infineon Technologies
Description: DIODE ARRAY GP 80V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
на замовлення 64551 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+26.61 грн
17+ 17.5 грн
100+ 8.53 грн
500+ 6.68 грн
1000+ 4.64 грн
Мінімальне замовлення: 12
BAV199E6327HTSA1 bav199series.pdf?folderId=db3a30431400ef6801141c748874044e&fileId=db3a30431400ef6801141cba733104e5
BAV199E6327HTSA1
Виробник: Infineon Technologies
Description: DIODE ARRAY GP 80V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
на замовлення 744063 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
15+21.29 грн
24+ 12.3 грн
100+ 7.69 грн
500+ 5.32 грн
1000+ 4.71 грн
Мінімальне замовлення: 15
BAV70E6327HTSA1 bav70series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141c0ba40e041d
BAV70E6327HTSA1
Виробник: Infineon Technologies
Description: DIODE ARRAY GP 80V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
на замовлення 57211 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
14+22.81 грн
20+ 15.23 грн
100+ 7.43 грн
Мінімальне замовлення: 14
BB535E7908HTSA1 BB535%2CBB555_Series.pdf
BB535E7908HTSA1
Виробник: Infineon Technologies
Description: DIODE VARACTOR 30V SOD-323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.3pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-3D
Part Status: Obsolete
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 9.8
товар відсутній
BB639E7908 bb639_bb659series.pdf?folderId=db3a304313d846880113d98def1d0130&fileId=db3a304313d846880113d9bc2d2e015e
BB639E7908
Виробник: Infineon Technologies
Description: DIODE VARACTOR 30V SOD-323
Packaging: Cut Tape (CT)
товар відсутній
BB833E6327HTSA1 bb833series.pdf?folderId=db3a304313d846880113d94414f400fc&fileId=db3a304313d846880113d969a38b0112
BB833E6327HTSA1
Виробник: Infineon Technologies
Description: DIODE VARACTOR 30V SOD-323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-3D
Part Status: Obsolete
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 12.4
товар відсутній
BC847AE6327HTSA1 fundamentals-of-power-semiconductors
BC847AE6327HTSA1
Виробник: Infineon Technologies
Description: BJT SOT23 45V NPN 0.25W 150C
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
товар відсутній
BC847CE6327HTSA1 fundamentals-of-power-semiconductors
BC847CE6327HTSA1
Виробник: Infineon Technologies
Description: BJT SOT23 45V NPN 0.25W 150C
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
на замовлення 12313 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
17+18.25 грн
28+ 10.62 грн
100+ 6.63 грн
500+ 4.57 грн
1000+ 4.04 грн
Мінімальне замовлення: 17
BC857CE6327HTSA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
BC857CE6327HTSA1
Виробник: Infineon Technologies
Description: BJT SOT23 45V PNP 0.25W 150C
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 6485 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
16+19.77 грн
26+ 11.49 грн
100+ 7.18 грн
500+ 4.96 грн
1000+ 4.38 грн
Мінімальне замовлення: 16
BCR133E6327HTSA1 bcr133series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7f8a3f0288
BCR133E6327HTSA1
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 130 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 52484 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
16+19.77 грн
26+ 11.57 грн
100+ 7.23 грн
500+ 5 грн
1000+ 4.42 грн
Мінімальне замовлення: 16
BCV46E6327HTSA1 Infineon-BCV26_BCV46-DS-v01_01-en.pdf?fileId=db3a30431441fb5d011445cddad90187
BCV46E6327HTSA1
Виробник: Infineon Technologies
Description: TRANS PNP DARL 60V 0.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
товар відсутній
BCV47E6327HTSA1 bcv27_bcv47.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445cf7c3b0188
BCV47E6327HTSA1
Виробник: Infineon Technologies
Description: TRANS NPN DARL 60V 0.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
на замовлення 3507 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+27.37 грн
19+ 16.18 грн
100+ 10.17 грн
500+ 7.1 грн
1000+ 6.32 грн
Мінімальне замовлення: 12
BCX70KE6327HTSA1 BCW60%2C%20BCX70%20Rev2007.pdf
BCX70KE6327HTSA1
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 50475 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+26.61 грн
17+ 17.5 грн
100+ 8.53 грн
500+ 6.67 грн
1000+ 4.64 грн
Мінімальне замовлення: 12
BFP405E6327BTSA1 BFP405_Rev2013.pdf
BFP405E6327BTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ SOT343-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 23dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
товар відсутній
BFP450E6327BTSA1 fundamentals-of-power-semiconductors
BFP450E6327BTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 5V 24GHZ SOT343-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15.5dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V
Frequency - Transition: 24GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
товар відсутній
BGX50AE6327HTSA1 bgx50aseries.pdf?folderId=db3a30431400ef6801141cc1c4cd04e8&fileId=db3a30431400ef6801141cc423c404e9
BGX50AE6327HTSA1
Виробник: Infineon Technologies
Description: BRIDGE RECT 1P 70V 140MA SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Standard
Supplier Device Package: PG-SOT-143-3D
Part Status: Last Time Buy
Voltage - Peak Reverse (Max): 70 V
Current - Average Rectified (Io): 140 mA
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 500 V
на замовлення 221447 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+31.93 грн
13+ 23.36 грн
100+ 14.03 грн
500+ 12.19 грн
1000+ 8.29 грн
Мінімальне замовлення: 10
SMBD914E6327HTSA1 smbd914_mmbd914series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141c419bed0444
SMBD914E6327HTSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 100V 250MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
на замовлення 52504 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
13+24.33 грн
19+ 16.18 грн
100+ 7.87 грн
500+ 6.16 грн
1000+ 4.28 грн
Мінімальне замовлення: 13
SMBT2222AE6327HTSA1 smbt2222a_mmbt2222a.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d011445fbaff0018f
SMBT2222AE6327HTSA1
Виробник: Infineon Technologies
Description: TRANS NPN 40V 0.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 330 mW
на замовлення 351899 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
14+22.05 грн
24+ 12.59 грн
100+ 7.87 грн
500+ 5.46 грн
1000+ 4.83 грн
Мінімальне замовлення: 14
SMBT2907AE6327HTSA1 smbt2907a.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d011445fe084a0190
SMBT2907AE6327HTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 60V 0.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 330 mW
на замовлення 931 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
14+22.05 грн
24+ 12.59 грн
100+ 7.87 грн
500+ 5.46 грн
Мінімальне замовлення: 14
SMBT3904E6327HTSA1 smbt3904series_mmbt3904.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d0114460005c10191
SMBT3904E6327HTSA1
Виробник: Infineon Technologies
Description: TRANS NPN 40V 0.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 330 mW
на замовлення 225221 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+28.13 грн
16+ 18.6 грн
100+ 9.07 грн
500+ 7.1 грн
1000+ 4.93 грн
Мінімальне замовлення: 11
SMBT3906E6327HTSA1 smbt3906series_mmbt3906.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d01144604610f0192
SMBT3906E6327HTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 40V 0.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 330 mW
на замовлення 38529 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
13+25.09 грн
18+ 16.99 грн
100+ 8.58 грн
500+ 6.57 грн
1000+ 4.87 грн
Мінімальне замовлення: 13
SMBTA14E6327HTSA1 smbta14_mmbta14.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445ef0201018c
SMBTA14E6327HTSA1
Виробник: Infineon Technologies
Description: TRANS NPN DARL 30V 0.3A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT23
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
товар відсутній
SMBTA64E6327 smbta64.pdf
SMBTA64E6327
Виробник: Infineon Technologies
Description: TRANS PNP DARL 30V 0.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
товар відсутній
SMBTA92E6327HTSA1 smbta92-mmbta92.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449c5cd03023b
SMBTA92E6327HTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 300V 0.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
товар відсутній
BAS16E6327HTSA1 bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff
BAS16E6327HTSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 80V 250MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 9428 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
16+19.77 грн
23+ 12.96 грн
100+ 6.34 грн
500+ 4.96 грн
1000+ 3.45 грн
Мінімальне замовлення: 16
BAS4004E6327HTSA1 INFNS19700-1.pdf?t.download=true&u=5oefqw
BAS4004E6327HTSA1
Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 47859 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+25.85 грн
16+ 19.11 грн
100+ 11.47 грн
500+ 9.96 грн
1000+ 6.77 грн
Мінімальне замовлення: 12
BAS4005E6327HTSA1 INFNS19700-1.pdf?t.download=true&u=5oefqw
BAS4005E6327HTSA1
Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 44083 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+25.85 грн
16+ 19.11 грн
100+ 11.47 грн
500+ 9.96 грн
1000+ 6.77 грн
Мінімальне замовлення: 12
BAS4006E6327HTSA1 INFNS19700-1.pdf?t.download=true&u=5oefqw
BAS4006E6327HTSA1
Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 23610 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
17+18.25 грн
22+ 13.4 грн
100+ 8.05 грн
500+ 7 грн
1000+ 4.93 грн
Мінімальне замовлення: 17
BAS40E6327HTSA1 INFNS19700-1.pdf?t.download=true&u=5oefqw
BAS40E6327HTSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 40V 120MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 21298 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+31.17 грн
14+ 21.67 грн
100+ 10.95 грн
500+ 9.11 грн
1000+ 7.09 грн
Мінімальне замовлення: 10
BAS7004E6327HTSA1 INFNS30154-1.pdf?t.download=true&u=5oefqw
BAS7004E6327HTSA1
Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 70V 70MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 45406 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+25.85 грн
16+ 19.11 грн
100+ 11.47 грн
500+ 9.96 грн
1000+ 6.77 грн
Мінімальне замовлення: 12
BAS7005E6327HTSA1 INFNS30154-1.pdf?t.download=true&u=5oefqw
BAS7005E6327HTSA1
Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 70V 70MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 71121 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+25.85 грн
16+ 19.11 грн
100+ 11.47 грн
500+ 9.96 грн
1000+ 6.77 грн
Мінімальне замовлення: 12
BAS70E6327HTSA1 INFNS30154-1.pdf?t.download=true&u=5oefqw
BAS70E6327HTSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 70V 70MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 28898 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+32.69 грн
13+ 22.7 грн
100+ 11.44 грн
500+ 9.52 грн
1000+ 7.41 грн
Мінімальне замовлення: 10
BAT6404WE6327HTSA1 INFNS11551-1.pdf?t.download=true&u=5oefqw
BAT6404WE6327HTSA1
Виробник: Infineon Technologies
Description: DIODE ARR SCHOT 40V 250MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BCX5310E6327HTSA1 bcx51_bcx52_bcx53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589c08423034d&location=.en.product.findProductTypeByName.html_dgdl_bcx51_bcx52_bcx53.pdf
BCX5310E6327HTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 80V 1A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
товар відсутній
BCX5410E6327 bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368&location=.en.product.findProductTypeByName.html_dgdl_bcx54_bcx55_bcx56.pdf
BCX5410E6327
Виробник: Infineon Technologies
Description: TRANS NPN 45V 1A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
товар відсутній
BCX6916E6327HTSA1 bcx69.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589f3f56603ee&location=.en.product.findProductTypeByName.html_dgdl_bcx69.pdf
BCX6916E6327HTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 20V 1A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
товар відсутній
IRF6607 IRF6607.pdf
IRF6607
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 27A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 94A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Power Dissipation (Max): 3.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DIRECTFET™ MT
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 15 V
товар відсутній
IRLR7833 IRLR7833%2C%20IRLU7833.pdf
IRLR7833
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 140A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 15 V
на замовлення 13041 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+157.38 грн
75+ 121.72 грн
150+ 119.15 грн
525+ 106.99 грн
1050+ 106.19 грн
Мінімальне замовлення: 2
IRLU7833 IRLR7833%2C%20IRLU7833.pdf
IRLU7833
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 140A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
товар відсутній
IRF6603 IRF6603.pdf
IRF6603
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 27A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 92A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Power Dissipation (Max): 3.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DIRECTFET™ MT
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6590 pF @ 15 V
товар відсутній
IP1001 ip1001.pdf
IP1001
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 20A 218BGA
товар відсутній
IP1001TR ip1001.pdf
IP1001TR
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 20A 218BGA
товар відсутній
IRFL4315 irfl4315pbf.pdf?fileId=5546d462533600a4015356280dbc1fbe
IRFL4315
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 2.6A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1.6A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
товар відсутній
IRF6156 irf6156.pdf
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 20V 6.5A FLIP-FET
Packaging: Bulk
Package / Case: 6-FlipFet™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-FlipFet™
Part Status: Discontinued at Digi-Key
товар відсутній
BSP742TXUMA1 Infineon-BSP742T-DS-v01_03-EN.pdf?fileId=5546d4625a888733015aae0b51d34c49
BSP742TXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 PDSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 260mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 800mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-6
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 22455 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+127.73 грн
10+ 110.19 грн
25+ 103.94 грн
100+ 83.11 грн
250+ 78.04 грн
500+ 68.29 грн
1000+ 55.65 грн
Мінімальне замовлення: 3
BSP742TXUMA1 Infineon-BSP742T-DS-v01_03-EN.pdf?fileId=5546d4625a888733015aae0b51d34c49
BSP742TXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 PDSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 260mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 800mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-6
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+58.29 грн
5000+ 54.05 грн
12500+ 51.97 грн
Мінімальне замовлення: 2500
BSP76 E6327 Infineon-BSP76-DS-v01_03-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a3043271faefd01274d00e2695d45&ack=t
BSP76 E6327
Виробник: Infineon Technologies
Description: IC PWR DRVR N-CHAN 1:1 SOT223-4
товар відсутній
BSP76 E6327 Infineon-BSP76-DS-v01_03-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a3043271faefd01274d00e2695d45&ack=t
BSP76 E6327
Виробник: Infineon Technologies
Description: IC PWR DRVR N-CHAN 1:1 SOT223-4
товар відсутній
BTS115ANKSA1 BTS115A II.pdf
BTS115ANKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 50V 15.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 4.5V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 25 V
товар відсутній
BTS117 description BTS117.pdf
BTS117
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220-3
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-5
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
товар відсутній
BTS121ANKSA1 BTS121A.pdf
BTS121ANKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 22A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
товар відсутній
BTS133 description BTS133.pdf
BTS133
Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:1 TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
товар відсутній
BTS141 description BTS141_TO_220.pdf
BTS141
Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:1 TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 25mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
товар відсутній
BTS282Z E3180A BTS282Z.pdf
BTS282Z E3180A
Виробник: Infineon Technologies
Description: MOSFET N-CH 49V 80A TO220-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 240µA
Supplier Device Package: PG-TO220-7-180
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 49 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
товар відсутній
BTS409L1 Infineon-BTS409L1%20E3062A-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9b0a1b7361a
BTS409L1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220-5
Features: Auto Restart, Status Flag
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: P-TO220-5-3
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Discontinued at Digi-Key
товар відсутній
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